Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NRVBM120ET3G | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVBM120LT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVBM130LT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A Current - Reverse Leakage @ Vr: 50 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVBS260T3G-VF01 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVBSS24T3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBA113EDXV6T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Resistor - Base (R1): 1kOhms Resistor - Emitter Base (R2): 1kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBA123EF3T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBA124XDXV6T1G | onsemi |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBA144TF3T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 47 kOhms Resistors Included: R1 Only |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBC113EPDXV6T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Resistor - Base (R1): 1kOhm Resistor - Emitter Base (R2): 1kOhm Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 112000 шт: термін постачання 21-31 дні (днів) |
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NSBC123EF3T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBC143TF3T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 4.7 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBC143ZDXV6T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBC144TF3T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 47 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSBC144WDXV6T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR0115CQP6T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 2 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SOT-963 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA Current - Reverse Leakage @ Vr: 15 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR01F30MXT5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA Current - Reverse Leakage @ Vr: 50 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSR0240V2T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Schottky Capacitance @ Vr, F: 4pF @ 5V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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NSR20F40NXT5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: 2-DSN (1.6x0.8), (0603) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSS1C300ET4G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2.1 W |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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NSS1C301ET4G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 120MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2.1 W |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NSV1C201LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 110MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 490 mW |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NSV1C201MZ4T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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NSV1C301ET4G-VF01 | onsemi |
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на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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NSV20201LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 460 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSVBAS19LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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NSVBAS21SLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 225mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVBAS21TMR6T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 3 Independent Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-74 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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NSVBAV23CLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 400mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSVBC124EDXV6T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVBC848CDW1T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVBC848CLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 225 mW |
на замовлення 114000 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT2907AWT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 150 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT5401LT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 225 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVMMBT6429LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V Frequency - Transition: 700MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NSVMMBT6520LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 225 mW Qualification: AEC-Q101 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NSVMMUN2133LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NSVMMUN2212LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
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В кошику од. на суму грн. | ||||||||||||||
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NSVMUN5332DW1T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVPZTA92T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.5 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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NSVR0230P2T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVR0520V2T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: Schottky Capacitance @ Vr, F: 35pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NSVUMC3NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NSVUMC5NT2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V Resistor - Base (R1): 47kOhms, 4.7kOhms Resistor - Emitter Base (R2): 47kOhms, 10kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTA4151PT1H | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 760mA (Tj) Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V Power Dissipation (Max): 301mW (Tj) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-75, SOT-416 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V |
на замовлення 153000 шт: термін постачання 21-31 дні (днів) |
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NTLLD4901NFTWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 810mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTLLD4951NFTWG | onsemi |
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW, 810mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTLUD3A50PZTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (2x2) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTLUD3A50PZTBG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (2x2) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTLUS3A18PZCTCG | onsemi |
Description: MOSFET P-CH 20V 5.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
NTMFD4951NFT1G | onsemi |
Description: MOSFET N-CH 30V 10.8A SO8FL Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NTMFD4951NFT3G | onsemi |
Description: MOSFET N-CH 30V 10.8A 8DFN DL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFD4952NFT1G | onsemi |
Description: MOSFET N-CH 30V 10.8A 8DFN DL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFD4952NFT3G | onsemi |
Description: MOSFET N-CH 30V 10.8A 8DFN DL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFD4C50NT3G | onsemi |
Description: MOSFET N-CH 30V 12A 8DFN DL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS4965NFT1G | onsemi |
Description: MOSFET N-CH 30V 17.5A/65A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS4965NFT3G | onsemi |
Description: MOSFET N-CH 30V 17.5A/65A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS4983NFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS4983NFT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 106A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 1.7W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS4985NFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. |
NRVBM120ET3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Description: DIODE SCHOTTKY 20V 1A POWERMITE
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В кошику
од. на суму грн.
NRVBM120LT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 10 V
Description: DIODE SCHOTTKY 20V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 10 V
товару немає в наявності
В кошику
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NRVBM130LT3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
Description: DIODE SCHOTTKY 30V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 10 V
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В кошику
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NRVBS260T3G-VF01 |
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Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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В кошику
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NRVBSS24T3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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В кошику
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NSBA113EDXV6T1G |
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Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT563
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: TRANS 2PNP PREBIAS 0.25W SOT563
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
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NSBA123EF3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
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NSBA124XDXV6T1G |
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Виробник: onsemi
Description: TRANS 2PNP PREBIAS 0.5W SOT563
Description: TRANS 2PNP PREBIAS 0.5W SOT563
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NSBA144TF3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
Resistors Included: R1 Only
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NSBC113EPDXV6T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhm
Resistor - Emitter Base (R2): 1kOhm
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN/PNP SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhm
Resistor - Emitter Base (R2): 1kOhm
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
на замовлення 112000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 7.25 грн |
8000+ | 6.42 грн |
12000+ | 6.13 грн |
20000+ | 5.45 грн |
28000+ | 5.27 грн |
40000+ | 5.16 грн |
NSBC123EF3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
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NSBC143TF3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 4.7 kOhms
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 4.7 kOhms
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NSBC143ZDXV6T5G |
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Виробник: onsemi
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS 2NPN PREBIAS 0.5W SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
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NSBC144TF3T5G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 47 kOhms
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NSBC144WDXV6T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
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NSR0115CQP6T5G |
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Виробник: onsemi
Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
Description: DIODE ARR SCHOT 15V 100MA SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-963
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 10 mA
Current - Reverse Leakage @ Vr: 15 µA @ 10 V
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NSR01F30MXT5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.9pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
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NSR0240V2T5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 4.30 грн |
16000+ | 3.89 грн |
24000+ | 3.84 грн |
40000+ | 3.59 грн |
56000+ | 3.58 грн |
NSR20F40NXT5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8), (0603)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8), (0603)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
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NSS1C300ET4G |
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Виробник: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 28.59 грн |
5000+ | 25.50 грн |
7500+ | 24.47 грн |
12500+ | 22.33 грн |
NSS1C301ET4G |
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Виробник: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 19.99 грн |
5000+ | 17.72 грн |
NSV1C201LT1G |
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Виробник: onsemi
Description: TRANS NPN 100V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 490 mW
Description: TRANS NPN 100V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 490 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.87 грн |
6000+ | 12.68 грн |
9000+ | 11.77 грн |
NSV1C201MZ4T1G |
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Виробник: onsemi
Description: TRANS NPN 100V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
Description: TRANS NPN 100V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 19.38 грн |
2000+ | 16.96 грн |
3000+ | 16.10 грн |
5000+ | 14.19 грн |
7000+ | 13.65 грн |
NSV1C301ET4G-VF01 |
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Виробник: onsemi
Description: TRANS NPN 100V 3A 3DPAK
Description: TRANS NPN 100V 3A 3DPAK
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
NSV20201LT1G |
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Виробник: onsemi
Description: TRANS NPN 20V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
Description: TRANS NPN 20V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.16 грн |
NSVBAS19LT1G |
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Виробник: onsemi
Description: DIODE STANDARD 120V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 120V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.62 грн |
6000+ | 2.38 грн |
15000+ | 2.22 грн |
21000+ | 2.21 грн |
30000+ | 2.15 грн |
NSVBAS21SLT1G |
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Виробник: onsemi
Description: DIODE STANDARD 250V 225MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 250V 225MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 225mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
NSVBAS21TMR6T1G |
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Виробник: onsemi
Description: DIODE ARRAY GP 250V 200MA SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-74
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE ARRAY GP 250V 200MA SC-74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-74
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.53 грн |
6000+ | 3.17 грн |
9000+ | 3.14 грн |
15000+ | 2.93 грн |
NSVBAV23CLT1G |
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Виробник: onsemi
Description: DIODE ARR GP 250V 400MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Description: DIODE ARR GP 250V 400MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.21 грн |
NSVBC124EDXV6T1G |
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Виробник: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2NPN 50V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
NSVBC848CDW1T1G |
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Виробник: onsemi
Description: TRANS 2NPN 30V 100MA SC88/SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS 2NPN 30V 100MA SC88/SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
NSVBC848CLT1G |
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Виробник: onsemi
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
Description: TRANS NPN 30V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 225 mW
на замовлення 114000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.31 грн |
6000+ | 1.98 грн |
9000+ | 1.86 грн |
15000+ | 1.61 грн |
21000+ | 1.53 грн |
30000+ | 1.46 грн |
75000+ | 1.27 грн |
NSVMMBT2907AWT1G |
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Виробник: onsemi
Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.25 грн |
6000+ | 4.56 грн |
9000+ | 4.31 грн |
NSVMMBT5401LT3G |
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Виробник: onsemi
Description: TRANS PNP 150V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 225 mW
Description: TRANS PNP 150V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 225 mW
товару немає в наявності
В кошику
од. на суму грн.
NSVMMBT6429LT1G |
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Виробник: onsemi
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Description: TRANS NPN 45V 0.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
Frequency - Transition: 700MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.98 грн |
6000+ | 4.31 грн |
9000+ | 4.07 грн |
NSVMMBT6520LT1G |
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Виробник: onsemi
Description: TRANS PNP 350V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 225 mW
Qualification: AEC-Q101
Description: TRANS PNP 350V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 225 mW
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.73 грн |
6000+ | 9.81 грн |
9000+ | 9.10 грн |
NSVMMUN2133LT1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.11 грн |
6000+ | 1.83 грн |
9000+ | 1.73 грн |
15000+ | 1.51 грн |
21000+ | 1.45 грн |
30000+ | 1.38 грн |
NSVMMUN2212LT1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NSVMUN5332DW1T1G |
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Виробник: onsemi
Description: TRANS NPN/PNP PREBIAS 0.25W SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN/PNP PREBIAS 0.25W SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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NSVPZTA92T1G |
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Виробник: onsemi
Description: TRANS PNP 300V 0.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
Description: TRANS PNP 300V 0.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.5 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 11.88 грн |
NSVR0230P2T5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
Qualification: AEC-Q101
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NSVR0520V2T1G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.90 грн |
NSVUMC3NT1G |
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Виробник: onsemi
Description: TRANS NPN/PNP PREBIAS 0.15W SC88
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Active
Description: TRANS NPN/PNP PREBIAS 0.15W SC88
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Active
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NSVUMC5NT2G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN/PNP 50V SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Resistor - Base (R1): 47kOhms, 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Qualification: AEC-Q101
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NTA4151PT1H |
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Виробник: onsemi
Description: MOSFET P-CH 20V 760MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 301mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
Description: MOSFET P-CH 20V 760MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 301mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 5 V
на замовлення 153000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 6.57 грн |
6000+ | 6.19 грн |
9000+ | 5.48 грн |
30000+ | 5.08 грн |
75000+ | 4.32 грн |
150000+ | 4.15 грн |
NTLLD4901NFTWG |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 810mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3x3)
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 810mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3x3)
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NTLLD4951NFTWG |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 810mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3x3)
Description: MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 810mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3x3)
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NTLUD3A50PZTAG |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Description: MOSFET 2P-CH 20V 2.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
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NTLUD3A50PZTBG |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Description: MOSFET 2P-CH 20V 2.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
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NTLUS3A18PZCTCG |
Виробник: onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Description: MOSFET P-CH 20V 5.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
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NTMFD4951NFT3G |
Виробник: onsemi
Description: MOSFET N-CH 30V 10.8A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Description: MOSFET N-CH 30V 10.8A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFD4952NFT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 10.8A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Description: MOSFET N-CH 30V 10.8A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFD4952NFT3G |
Виробник: onsemi
Description: MOSFET N-CH 30V 10.8A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Description: MOSFET N-CH 30V 10.8A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFD4C50NT3G |
Виробник: onsemi
Description: MOSFET N-CH 30V 12A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Description: MOSFET N-CH 30V 12A 8DFN DL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFS4965NFT1G |
Виробник: onsemi
Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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NTMFS4965NFT3G |
Виробник: onsemi
Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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NTMFS4983NFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 22A/106A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Description: MOSFET N-CH 30V 22A/106A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
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NTMFS4983NFT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 22A/106A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 1.7W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
Description: MOSFET N-CH 30V 22A/106A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 1.7W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 15 V
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NTMFS4985NFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET N-CH 30V 17.5A/65A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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од. на суму грн.