| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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NCV8535MN500R2G | onsemi |
Description: IC REG LINEAR 5V 500MA 10DFNPackaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 190 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 5V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.34V @ 500mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 14 mA |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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FDBL86561-F085 | onsemi |
Description: MOSFET N-CH 60V 300A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDBL86361-F085 | onsemi |
Description: MOSFET N-CH 80V 300A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDMF3035 | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 31PQFNPackaging: Tape & Reel (TR) Features: Bootstrap Circuit, Diode Emulation Package / Case: 31-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 50A Current - Peak Output: 50A Technology: UMOS Voltage - Load: 4.5V ~ 24V Supplier Device Package: 31-PQFN (5x5) Fault Protection: Shoot-Through, UVLO Load Type: Inductive Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FPF2488UCX | onsemi |
Description: IC BATT PROTECTION 2CELL 15WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FAN48623UC50GX | onsemi |
Description: IC REG BOOST PROG 2.5A 16WLCSPPackaging: Tape & Reel (TR) Package / Case: 16-UFBGA, WLCSP Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 2.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.5MHz Voltage - Input (Max): 5.5V Topology: Boost Supplier Device Package: 16-WLCSP (1.78x1.78) Synchronous Rectifier: Yes Voltage - Output (Max): 5.2V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 5V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDBL86561-F085 | onsemi |
Description: MOSFET N-CH 60V 300A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 872 шт: термін постачання 21-31 дні (днів) |
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FDBL86361-F085 | onsemi |
Description: MOSFET N-CH 80V 300A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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FDMF3035 | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 31PQFNPackaging: Cut Tape (CT) Features: Bootstrap Circuit, Diode Emulation Package / Case: 31-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 50A Current - Peak Output: 50A Technology: UMOS Voltage - Load: 4.5V ~ 24V Supplier Device Package: 31-PQFN (5x5) Fault Protection: Shoot-Through, UVLO Load Type: Inductive Part Status: Active |
на замовлення 1035 шт: термін постачання 21-31 дні (днів) |
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FAN48623UC50GX | onsemi |
Description: IC REG BOOST PROG 2.5A 16WLCSPPackaging: Cut Tape (CT) Package / Case: 16-UFBGA, WLCSP Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 2.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.5MHz Voltage - Input (Max): 5.5V Topology: Boost Supplier Device Package: 16-WLCSP (1.78x1.78) Synchronous Rectifier: Yes Voltage - Output (Max): 5.2V Voltage - Input (Min): 2.5V Voltage - Output (Min/Fixed): 5V Part Status: Active |
на замовлення 2336 шт: термін постачання 21-31 дні (днів) |
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FAN6605MX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7SOICMounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Start Up: 16 V Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage Supplier Device Package: 7-SOIC Voltage - Supply (Vcc/Vdd): 10V ~ 22V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 65kHz Duty Cycle: 75% Operating Temperature: -40°C ~ 105°C (TA) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDMA86251 | onsemi |
Description: MOSFET N-CH 150V 2.4A 6MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMC6686P | onsemi |
Description: MOSFET P-CH 20V 18A/56A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FDMC6688P | onsemi |
Description: MOSFET P-CH 20V 14A/56A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FPF2487UCX | onsemi |
Description: IC BATT PROTECTION 2CELL 15WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDMA86251 | onsemi |
Description: MOSFET N-CH 150V 2.4A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMC6686P | onsemi |
Description: MOSFET P-CH 20V 18A/56A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 858 шт: термін постачання 21-31 дні (днів) |
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FDMC6688P | onsemi |
Description: MOSFET P-CH 20V 14A/56A 8PQFNSupplier Device Package: 8-PQFN (3.3x3.3), Power33 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SS351-TB-E | onsemi |
Description: RF DIODE SCHOTTKY 5V 3CPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.9pF @ 0.2V, 1MHz Voltage - Peak Reverse (Max): 5V Supplier Device Package: 3-CP Current - Max: 30 mA |
на замовлення 15900 шт: термін постачання 21-31 дні (днів) |
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2SA1417S-TD-E | onsemi |
Description: TRANS PNP 100V 2A PCPFrequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: PCP |
на замовлення 2360 шт: термін постачання 21-31 дні (днів) |
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2SA2013-TD-E | onsemi |
Description: TRANS PNP 50V 4A PCPPackaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 400MHz Supplier Device Package: PCP Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3.5 W |
на замовлення 441 шт: термін постачання 21-31 дні (днів) |
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2SA2040-TL-E | onsemi |
Description: TRANS PNP 50V 8A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 290MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 3665 шт: термін постачання 21-31 дні (днів) |
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2SA2153-TD-E | onsemi |
Description: TRANS PNP 50V 2A PCPPower - Max: 3.5 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: PCP Frequency - Transition: 420MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 2103 шт: термін постачання 21-31 дні (днів) |
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2SA2202-TD-E | onsemi |
Description: TRANS PNP 100V 2A PCPSupplier Device Package: PCP Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Power - Max: 3.5 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Part Status: Active |
на замовлення 1671 шт: термін постачання 21-31 дні (днів) |
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2SC3646S-TD-E | onsemi |
Description: TRANS NPN 100V 1A PCPPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 3175 шт: термін постачання 21-31 дні (днів) |
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2SC3647S-TD-E | onsemi |
Description: TRANS NPN 100V 2A PCPOperating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A |
на замовлення 1090 шт: термін постачання 21-31 дні (днів) |
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2SC4027S-TL-E | onsemi |
Description: TRANS NPN 160V 1.5A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1 W |
на замовлення 2435 шт: термін постачання 21-31 дні (днів) |
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2SC4027T-TL-E | onsemi |
Description: TRANS NPN 160V 1.5A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1 W |
на замовлення 9394 шт: термін постачання 21-31 дні (днів) |
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2SC5566-TD-E | onsemi |
Description: TRANS NPN 50V 4A PCPPackage / Case: TO-243AA Packaging: Cut Tape (CT) Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 4 A Part Status: Active Supplier Device Package: PCP Frequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 225mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount |
на замовлення 1372 шт: термін постачання 21-31 дні (днів) |
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2SC5706-TL-E | onsemi |
Description: TRANS NPN 50V 5A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 400MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
на замовлення 965 шт: термін постачання 21-31 дні (днів) |
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2SC5707-TL-E | onsemi |
Description: TRANS NPN 50V 8A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 330MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 2788 шт: термін постачання 21-31 дні (днів) |
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2SC5964-TD-E | onsemi |
Description: TRANS NPN 50V 3A PCPPower - Max: 3.5 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: PCP Frequency - Transition: 380MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 5658 шт: термін постачання 21-31 дні (днів) |
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2SC5994-TD-E | onsemi |
Description: TRANS NPN 50V 2A PCPPart Status: Active Supplier Device Package: PCP Frequency - Transition: 420MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Power - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A |
на замовлення 1012 шт: термін постачання 21-31 дні (днів) |
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2SC6017-TL-E | onsemi |
Description: TRANS NPN 50V 10A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 200MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 950 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SD1623S-TD-E | onsemi |
Description: TRANS NPN 50V 2A PCPPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: PCP Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 955 шт: термін постачання 21-31 дні (днів) |
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2SD1815S-TL-E | onsemi |
Description: TRANS NPN 100V 3A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V Frequency - Transition: 180MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 202 шт: термін постачання 21-31 дні (днів) |
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2SK932-22-TB-E | onsemi |
Description: JFET N-CH 50MA SMCPPower - Max: 200 mW Drain to Source Voltage (Vdss): 15 V Part Status: Obsolete Supplier Device Package: SMCP Current Drain (Id) - Max: 50 mA FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Current - Drain (Idss) @ Vds (Vgs=0): 7.3 mA @ 5 V Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SK932-23-TB-E | onsemi |
Description: JFET N-CH 50MA SMCPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Current Drain (Id) - Max: 50 mA Supplier Device Package: SMCP Part Status: Active Drain to Source Voltage (Vdss): 15 V Power - Max: 200 mW Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V |
на замовлення 25439 шт: термін постачання 21-31 дні (днів) |
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2SK932-24-TB-E | onsemi |
Description: JFET N-CH 50MA SMCPMounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA Power - Max: 200 mW Drain to Source Voltage (Vdss): 15 V Part Status: Active Supplier Device Package: SMCP Current Drain (Id) - Max: 50 mA FET Type: N-Channel Operating Temperature: 150°C (TJ) |
на замовлення 7673 шт: термін постачання 21-31 дні (днів) |
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3LN01S-TL-E | onsemi |
Description: MOSFET N-CH 30V 150MA SMCPInput Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Part Status: Obsolete Supplier Device Package: SMCP Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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50A02CH-TL-E | onsemi |
Description: TRANS PNP 50V 0.5A 3-CPHPower - Max: 700 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: 3-CPH Frequency - Transition: 690MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 7581 шт: термін постачання 21-31 дні (днів) |
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50C02CH-TL-E | onsemi |
Description: TRANS NPN 50V 0.5A 3-CPHPower - Max: 700 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: 3-CPH Frequency - Transition: 500MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 15055 шт: термін постачання 21-31 дні (днів) |
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5LN01SP-AC | onsemi |
Description: MOSFET N-CH 50V 100MA 3SPA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ATP112-TL-H | onsemi |
Description: MOSFET P-CH 60V 25A ATPAK Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: ATPAK Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: ATPAK (2 leads+tab) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS16P2T5G | onsemi |
Description: DIODE STANDARD 100V 200MA SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT54CLT3G | onsemi |
Description: DIODE ARR SCHOTT 30V 200MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 135821 шт: термін постачання 21-31 дні (днів) |
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BAT54M3T5G | onsemi |
Description: DIODE SCHOTTKY 30V 200MA SOT723Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-723 Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 82040 шт: термін постачання 21-31 дні (днів) |
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BC846ALT3G | onsemi |
Description: TRANS NPN 65V 0.1A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 300 mW |
на замовлення 13296 шт: термін постачання 21-31 дні (днів) |
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BC856BDW1T3G | onsemi |
Description: TRANS 2PNP 65V 100MA SC88/SC70Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
на замовлення 5451 шт: термін постачання 21-31 дні (днів) |
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BVSS138LT1G | onsemi |
Description: MOSFET N-CH 50V 200MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 37305 шт: термін постачання 21-31 дні (днів) |
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BVSS84LT1G | onsemi |
Description: MOSFET P-CH 50V 130MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V Qualification: AEC-Q101 |
на замовлення 55256 шт: термін постачання 21-31 дні (днів) |
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CAT1025WI-30-GT3 | onsemi |
Description: IC SUPERVISR CPU 2K EEPROM 8SOICDigiKey Programmable: Not Verified Supplier Device Package: 8-SOIC Voltage - Threshold: 3V Reset Timeout: 130ms Minimum Number of Voltages Monitored: 1 Operating Temperature: -40°C ~ 85°C Reset: Active High/Active Low Type: Simple Reset/Power-On Reset Output: Open Drain or Open Collector Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 2501 шт: термін постачання 21-31 дні (днів) |
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CAT24C04C4ATR | onsemi |
Description: IC EEPROM 4KBIT I2C 4WLCSPPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.84x0.86) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT24C08C4ATR | onsemi |
Description: IC EEPROM 8KBIT I2C 4WLCSPPackaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP (0.84x0.86) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 1K x 8 DigiKey Programmable: Not Verified |
на замовлення 45159 шт: термін постачання 21-31 дні (днів) |
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CAT24C512HU5IGT3 | onsemi |
Description: IC EEPROM 512KBIT I2C 1MHZ 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (3x2) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 64K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT24C64HU4I-GT3 | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN-EP (2x3) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 510 шт: термін постачання 21-31 дні (днів) |
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CAT24M01HU5I-GT3 | onsemi |
Description: IC EEPROM 1MBIT I2C 1MHZ 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (3x2) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT24M01YI-GT3 | onsemi |
Description: IC EEPROM 1MBIT I2C 1MHZ 8TSSOPMounting Type: Surface Mount Memory Organization: 128K x 8 Access Time: 400 ns Memory Interface: I2C Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-TSSOP Memory Format: EEPROM Clock Frequency: 1 MHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Mbit DigiKey Programmable: Not Verified Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 5561 шт: термін постачання 21-31 дні (днів) |
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CAT3200HU2-GT3 | onsemi |
Description: IC REG CHARGE PUMP ADJ/5V 8UDFNPackaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Output Type: Adjustable (Fixed) Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2MHz Voltage - Input (Max): 4.5V Topology: Charge Pump Supplier Device Package: 8-UDFN (2x2) Synchronous Rectifier: No Voltage - Output (Max): 6V Voltage - Input (Min): 2.2V Voltage - Output (Min/Fixed): 2.7V (5V) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT32TDI-GT3 | onsemi |
Description: IC LED DRVR RGLTR PWM TSOT23-6 Type: DC DC Regulator Frequency: 1.2MHz Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Part Status: Active Voltage - Supply (Max): 7V Voltage - Supply (Min): 2V Dimming: PWM Supplier Device Package: TSOT-23-6 Topology: Step-Up (Boost) Internal Switch(s): Yes Current - Output / Channel: 40mA Applications: Backlight Operating Temperature: -40°C ~ 85°C (TA) |
товару немає в наявності |
В кошику од. на суму грн. |
| NCV8535MN500R2G |
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Виробник: onsemi
Description: IC REG LINEAR 5V 500MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 190 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
Description: IC REG LINEAR 5V 500MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 190 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.34V @ 500mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 14 mA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| FDBL86561-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| FDBL86361-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| FDMF3035 |
![]() |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 50A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 50A
Technology: UMOS
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 50A 31PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 50A
Technology: UMOS
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| FPF2488UCX |
![]() |
Виробник: onsemi
Description: IC BATT PROTECTION 2CELL 15WLCSP
Description: IC BATT PROTECTION 2CELL 15WLCSP
товару немає в наявності
В кошику
од. на суму грн.
| FAN48623UC50GX |
![]() |
Виробник: onsemi
Description: IC REG BOOST PROG 2.5A 16WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 2.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP (1.78x1.78)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.2V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST PROG 2.5A 16WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 2.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP (1.78x1.78)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.2V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDBL86561-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 872 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 443.25 грн |
| 10+ | 286.54 грн |
| 100+ | 207.06 грн |
| 500+ | 181.33 грн |
| FDBL86361-F085 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 471.92 грн |
| 10+ | 306.47 грн |
| 100+ | 222.35 грн |
| FDMF3035 |
![]() |
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 50A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 50A
Technology: UMOS
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 50A 31PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 31-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 50A
Technology: UMOS
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: 31-PQFN (5x5)
Fault Protection: Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 1035 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.77 грн |
| 10+ | 131.48 грн |
| 100+ | 90.87 грн |
| 500+ | 68.99 грн |
| 1000+ | 63.75 грн |
| FAN48623UC50GX |
![]() |
Виробник: onsemi
Description: IC REG BOOST PROG 2.5A 16WLCSP
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 2.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP (1.78x1.78)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.2V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IC REG BOOST PROG 2.5A 16WLCSP
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 2.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP (1.78x1.78)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.2V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
на замовлення 2336 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.31 грн |
| 10+ | 67.01 грн |
| 25+ | 60.77 грн |
| 100+ | 50.62 грн |
| 250+ | 47.55 грн |
| 500+ | 45.70 грн |
| 1000+ | 43.46 грн |
| FAN6605MX |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage
Supplier Device Package: 7-SOIC
Voltage - Supply (Vcc/Vdd): 10V ~ 22V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 105°C (TA)
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage
Supplier Device Package: 7-SOIC
Voltage - Supply (Vcc/Vdd): 10V ~ 22V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 105°C (TA)
товару немає в наявності
В кошику
од. на суму грн.
| FDMA86251 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 2.4A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V
Description: MOSFET N-CH 150V 2.4A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 26.15 грн |
| 6000+ | 23.39 грн |
| FDMC6686P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 18A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V
Description: MOSFET P-CH 20V 18A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDMC6688P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 14A/56A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 14A/56A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
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од. на суму грн.
| FPF2487UCX |
![]() |
Виробник: onsemi
Description: IC BATT PROTECTION 2CELL 15WLCSP
Description: IC BATT PROTECTION 2CELL 15WLCSP
товару немає в наявності
В кошику
од. на суму грн.
| FDMA86251 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 2.4A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V
Description: MOSFET N-CH 150V 2.4A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 2.4A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 75 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.94 грн |
| 10+ | 64.70 грн |
| 100+ | 43.04 грн |
| 500+ | 31.66 грн |
| 1000+ | 28.85 грн |
| FDMC6686P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 18A/56A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 18A/56A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 18A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 858 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 182.88 грн |
| 10+ | 113.72 грн |
| 100+ | 77.99 грн |
| 500+ | 58.81 грн |
| FDMC6688P |
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Виробник: onsemi
Description: MOSFET P-CH 20V 14A/56A 8PQFN
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 14A/56A 8PQFN
Supplier Device Package: 8-PQFN (3.3x3.3), Power33
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Input Capacitance (Ciss) (Max) @ Vds: 7435 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 1SS351-TB-E |
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Виробник: onsemi
Description: RF DIODE SCHOTTKY 5V 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: 3-CP
Current - Max: 30 mA
Description: RF DIODE SCHOTTKY 5V 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.9pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 5V
Supplier Device Package: 3-CP
Current - Max: 30 mA
на замовлення 15900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 51.92 грн |
| 10+ | 31.19 грн |
| 100+ | 20.06 грн |
| 500+ | 14.31 грн |
| 1000+ | 12.86 грн |
| 2SA1417S-TD-E |
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Виробник: onsemi
Description: TRANS PNP 100V 2A PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: PCP
Description: TRANS PNP 100V 2A PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: PCP
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 41.12 грн |
| 100+ | 26.83 грн |
| 500+ | 19.43 грн |
| 2SA2013-TD-E |
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Виробник: onsemi
Description: TRANS PNP 50V 4A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
Description: TRANS PNP 50V 4A PCP
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
на замовлення 441 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 41.12 грн |
| 100+ | 26.78 грн |
| 2SA2040-TL-E |
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Виробник: onsemi
Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 3665 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.69 грн |
| 10+ | 70.07 грн |
| 100+ | 46.79 грн |
| 2SA2153-TD-E |
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Виробник: onsemi
Description: TRANS PNP 50V 2A PCP
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 50V 2A PCP
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 2103 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.04 грн |
| 11+ | 28.58 грн |
| 100+ | 18.42 грн |
| 500+ | 13.15 грн |
| 2SA2202-TD-E |
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Виробник: onsemi
Description: TRANS PNP 100V 2A PCP
Supplier Device Package: PCP
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Description: TRANS PNP 100V 2A PCP
Supplier Device Package: PCP
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
на замовлення 1671 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.07 грн |
| 10+ | 33.95 грн |
| 100+ | 23.61 грн |
| 500+ | 17.30 грн |
| 2SC3646S-TD-E |
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Виробник: onsemi
Description: TRANS NPN 100V 1A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 100V 1A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 3175 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.17 грн |
| 10+ | 36.41 грн |
| 100+ | 25.33 грн |
| 500+ | 18.56 грн |
| 2SC3647S-TD-E |
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Виробник: onsemi
Description: TRANS NPN 100V 2A PCP
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Description: TRANS NPN 100V 2A PCP
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
на замовлення 1090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.07 грн |
| 10+ | 34.47 грн |
| 100+ | 23.87 грн |
| 500+ | 18.72 грн |
| 2SC4027S-TL-E |
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Виробник: onsemi
Description: TRANS NPN 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Description: TRANS NPN 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.99 грн |
| 10+ | 56.26 грн |
| 100+ | 37.26 грн |
| 2SC4027T-TL-E |
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Виробник: onsemi
Description: TRANS NPN 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Description: TRANS NPN 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
на замовлення 9394 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.46 грн |
| 10+ | 70.44 грн |
| 100+ | 47.23 грн |
| 2SC5566-TD-E |
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Виробник: onsemi
Description: TRANS NPN 50V 4A PCP
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 225mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Description: TRANS NPN 50V 4A PCP
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 225mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
на замовлення 1372 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.09 грн |
| 10+ | 39.10 грн |
| 100+ | 25.45 грн |
| 500+ | 18.40 грн |
| 2SC5706-TL-E |
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Виробник: onsemi
Description: TRANS NPN 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: TRANS NPN 50V 5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
на замовлення 965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.94 грн |
| 10+ | 65.07 грн |
| 100+ | 43.33 грн |
| 2SC5707-TL-E |
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Виробник: onsemi
Description: TRANS NPN 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 2788 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.41 грн |
| 10+ | 78.80 грн |
| 100+ | 52.91 грн |
| 2SC5964-TD-E |
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Виробник: onsemi
Description: TRANS NPN 50V 3A PCP
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 380MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 3A PCP
Power - Max: 3.5 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 380MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 290mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 5658 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.02 грн |
| 10+ | 33.13 грн |
| 100+ | 21.43 грн |
| 500+ | 15.37 грн |
| 2SC5994-TD-E |
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Виробник: onsemi
Description: TRANS NPN 50V 2A PCP
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Description: TRANS NPN 50V 2A PCP
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 420MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
на замовлення 1012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.72 грн |
| 11+ | 29.55 грн |
| 100+ | 20.18 грн |
| 500+ | 14.92 грн |
| 2SC6017-TL-E |
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Виробник: onsemi
Description: TRANS NPN 50V 10A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
Description: TRANS NPN 50V 10A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 950 mW
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| 2SD1623S-TD-E |
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Виробник: onsemi
Description: TRANS NPN 50V 2A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 2A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.77 грн |
| 10+ | 37.76 грн |
| 100+ | 24.57 грн |
| 500+ | 17.71 грн |
| 2SD1815S-TL-E |
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Виробник: onsemi
Description: TRANS NPN 100V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS NPN 100V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 202 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.71 грн |
| 10+ | 65.82 грн |
| 100+ | 43.88 грн |
| 2SK932-22-TB-E |
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Виробник: onsemi
Description: JFET N-CH 50MA SMCP
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
Part Status: Obsolete
Supplier Device Package: SMCP
Current Drain (Id) - Max: 50 mA
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Drain (Idss) @ Vds (Vgs=0): 7.3 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Description: JFET N-CH 50MA SMCP
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
Part Status: Obsolete
Supplier Device Package: SMCP
Current Drain (Id) - Max: 50 mA
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Drain (Idss) @ Vds (Vgs=0): 7.3 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
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| 2SK932-23-TB-E |
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Виробник: onsemi
Description: JFET N-CH 50MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Description: JFET N-CH 50MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SMCP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
на замовлення 25439 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.49 грн |
| 11+ | 27.83 грн |
| 100+ | 17.80 грн |
| 500+ | 12.66 грн |
| 1000+ | 11.36 грн |
| 2SK932-24-TB-E |
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Виробник: onsemi
Description: JFET N-CH 50MA SMCP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
Part Status: Active
Supplier Device Package: SMCP
Current Drain (Id) - Max: 50 mA
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Description: JFET N-CH 50MA SMCP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Drain (Idss) @ Vds (Vgs=0): 14.5 mA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 µA
Power - Max: 200 mW
Drain to Source Voltage (Vdss): 15 V
Part Status: Active
Supplier Device Package: SMCP
Current Drain (Id) - Max: 50 mA
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
на замовлення 7673 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.12 грн |
| 10+ | 34.40 грн |
| 100+ | 22.27 грн |
| 500+ | 15.98 грн |
| 1000+ | 14.40 грн |
| 3LN01S-TL-E |
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Виробник: onsemi
Description: MOSFET N-CH 30V 150MA SMCP
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Obsolete
Supplier Device Package: SMCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 150MA SMCP
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Obsolete
Supplier Device Package: SMCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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| 50A02CH-TL-E |
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Виробник: onsemi
Description: TRANS PNP 50V 0.5A 3-CPH
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: 3-CPH
Frequency - Transition: 690MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 50V 0.5A 3-CPH
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: 3-CPH
Frequency - Transition: 690MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 7581 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.30 грн |
| 13+ | 24.03 грн |
| 100+ | 15.36 грн |
| 500+ | 10.89 грн |
| 1000+ | 9.75 грн |
| 50C02CH-TL-E |
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Виробник: onsemi
Description: TRANS NPN 50V 0.5A 3-CPH
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: 3-CPH
Frequency - Transition: 500MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 0.5A 3-CPH
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: 3-CPH
Frequency - Transition: 500MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 15055 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.30 грн |
| 13+ | 24.03 грн |
| 100+ | 15.36 грн |
| 500+ | 10.89 грн |
| 1000+ | 9.75 грн |
| 5LN01SP-AC |
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Виробник: onsemi
Description: MOSFET N-CH 50V 100MA 3SPA
Description: MOSFET N-CH 50V 100MA 3SPA
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| ATP112-TL-H |
Виробник: onsemi
Description: MOSFET P-CH 60V 25A ATPAK
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: ATPAK
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: ATPAK (2 leads+tab)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 25A ATPAK
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: ATPAK
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: ATPAK (2 leads+tab)
Packaging: Cut Tape (CT)
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| BAS16P2T5G |
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Виробник: onsemi
Description: DIODE STANDARD 100V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE STANDARD 100V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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| BAT54CLT3G |
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Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 135821 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 8.52 грн |
| 57+ | 5.30 грн |
| 100+ | 3.26 грн |
| 500+ | 2.21 грн |
| 1000+ | 1.93 грн |
| 2000+ | 1.70 грн |
| 5000+ | 1.42 грн |
| BAT54M3T5G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 82040 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.95 грн |
| 38+ | 7.98 грн |
| 100+ | 4.92 грн |
| 500+ | 3.36 грн |
| 1000+ | 2.95 грн |
| 2000+ | 2.61 грн |
| BC846ALT3G |
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Виробник: onsemi
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
на замовлення 13296 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.30 грн |
| 55+ | 5.52 грн |
| 100+ | 3.37 грн |
| 500+ | 2.28 грн |
| 1000+ | 2.00 грн |
| 2000+ | 1.76 грн |
| 5000+ | 1.47 грн |
| BC856BDW1T3G |
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Виробник: onsemi
Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
на замовлення 5451 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.95 грн |
| 37+ | 8.13 грн |
| 100+ | 5.04 грн |
| 500+ | 3.45 грн |
| 1000+ | 3.03 грн |
| 2000+ | 2.68 грн |
| 5000+ | 2.26 грн |
| BVSS138LT1G |
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Виробник: onsemi
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 37305 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.70 грн |
| 24+ | 12.91 грн |
| 100+ | 8.05 грн |
| 500+ | 5.58 грн |
| 1000+ | 4.94 грн |
| BVSS84LT1G |
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Виробник: onsemi
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V
Qualification: AEC-Q101
Description: MOSFET P-CH 50V 130MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 5 V
Qualification: AEC-Q101
на замовлення 55256 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 19+ | 16.12 грн |
| 100+ | 10.16 грн |
| 500+ | 7.08 грн |
| 1000+ | 6.29 грн |
| CAT1025WI-30-GT3 |
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Виробник: onsemi
Description: IC SUPERVISR CPU 2K EEPROM 8SOIC
DigiKey Programmable: Not Verified
Supplier Device Package: 8-SOIC
Voltage - Threshold: 3V
Reset Timeout: 130ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C
Reset: Active High/Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC SUPERVISR CPU 2K EEPROM 8SOIC
DigiKey Programmable: Not Verified
Supplier Device Package: 8-SOIC
Voltage - Threshold: 3V
Reset Timeout: 130ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C
Reset: Active High/Active Low
Type: Simple Reset/Power-On Reset
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2501 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.41 грн |
| 10+ | 112.08 грн |
| 25+ | 105.75 грн |
| 100+ | 84.55 грн |
| 250+ | 79.39 грн |
| 500+ | 69.47 грн |
| 1000+ | 56.62 грн |
| CAT24C04C4ATR |
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Виробник: onsemi
Description: IC EEPROM 4KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
| CAT24C08C4ATR |
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Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT I2C 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
на замовлення 45159 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.40 грн |
| 26+ | 11.64 грн |
| 27+ | 11.37 грн |
| 50+ | 10.46 грн |
| 100+ | 10.25 грн |
| 250+ | 9.97 грн |
| 500+ | 9.59 грн |
| 1000+ | 9.38 грн |
| CAT24C512HU5IGT3 |
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Виробник: onsemi
Description: IC EEPROM 512KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 512KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| CAT24C64HU4I-GT3 |
![]() |
Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 510 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.75 грн |
| 10+ | 35.30 грн |
| 25+ | 34.42 грн |
| 50+ | 31.61 грн |
| 100+ | 30.94 грн |
| 250+ | 30.03 грн |
| 500+ | 28.86 грн |
| CAT24M01HU5I-GT3 |
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Виробник: onsemi
Description: IC EEPROM 1MBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1MBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
| CAT24M01YI-GT3 |
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Виробник: onsemi
Description: IC EEPROM 1MBIT I2C 1MHZ 8TSSOP
Mounting Type: Surface Mount
Memory Organization: 128K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
DigiKey Programmable: Not Verified
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 1MBIT I2C 1MHZ 8TSSOP
Mounting Type: Surface Mount
Memory Organization: 128K x 8
Access Time: 400 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Mbit
DigiKey Programmable: Not Verified
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 5561 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 86.79 грн |
| 10+ | 78.58 грн |
| 25+ | 76.41 грн |
| 50+ | 70.14 грн |
| 100+ | 68.57 грн |
| 250+ | 66.49 грн |
| 500+ | 63.84 грн |
| 1000+ | 62.30 грн |
| CAT3200HU2-GT3 |
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Виробник: onsemi
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
Part Status: Active
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
Part Status: Active
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| CAT32TDI-GT3 |
Виробник: onsemi
Description: IC LED DRVR RGLTR PWM TSOT23-6
Type: DC DC Regulator
Frequency: 1.2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Supply (Max): 7V
Voltage - Supply (Min): 2V
Dimming: PWM
Supplier Device Package: TSOT-23-6
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 40mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC LED DRVR RGLTR PWM TSOT23-6
Type: DC DC Regulator
Frequency: 1.2MHz
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Supply (Max): 7V
Voltage - Supply (Min): 2V
Dimming: PWM
Supplier Device Package: TSOT-23-6
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 40mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
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од. на суму грн.





























