Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1156) > Сторінка 7 з 20
| Фото | Назва | Виробник | Інформація |
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BZX84C12_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 12V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA кількість в упаковці: 1 шт |
на замовлення 5250 шт: термін постачання 14-21 дні (днів) |
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BZX84C12_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 12V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 5250 шт: термін постачання 21-30 дні (днів) |
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BZX84C15_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA кількість в упаковці: 1 шт |
на замовлення 2840 шт: термін постачання 14-21 дні (днів) |
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BZX84C15_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 2840 шт: термін постачання 21-30 дні (днів) |
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BZX84C24_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C3V9-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 3.9V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C4V7_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA кількість в упаковці: 1 шт |
на замовлення 2863 шт: термін постачання 14-21 дні (днів) |
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BZX84C4V7_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA |
на замовлення 2863 шт: термін постачання 21-30 дні (днів) |
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BZX84C5V1_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 2µA кількість в упаковці: 1 шт |
на замовлення 2847 шт: термін постачання 14-21 дні (днів) |
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BZX84C5V1_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 2847 шт: термін постачання 21-30 дні (днів) |
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BZX84C5V6_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA кількість в упаковці: 1 шт |
на замовлення 1329 шт: термін постачання 14-21 дні (днів) |
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BZX84C5V6_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 1329 шт: термін постачання 21-30 дні (днів) |
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BZX84C5V6_R2_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA Type of diode: Zener Power dissipation: 0.41W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BZX84C7V5W_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 7.5V; SMD; reel,tape; SOT323; single diode Type of diode: Zener Mounting: SMD Case: SOT323 Kind of package: reel; tape Semiconductor structure: single diode Power dissipation: 0.2W Tolerance: ±5% Zener voltage: 7.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DI1010S_T0_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1A Max. forward impulse current: 30A Case: SDIP 4L Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
на замовлення 824 шт: термін постачання 14-21 дні (днів) |
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DI1010S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1A Max. forward impulse current: 30A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DI1010S_T0_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1A Max. forward impulse current: 30A Case: SDIP 4L Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 824 шт: термін постачання 21-30 дні (днів) |
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| DI106S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; 30A; SDIP 4L; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 30A Case: SDIP 4L Electrical mounting: SMT Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DI106_T0_00001 | PanJit Semiconductor | DI106-T0 SMD/THT sing. phase diode bridge rectif. |
на замовлення 278 шт: термін постачання 14-21 дні (днів) |
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DI108S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 30A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
на замовлення 7986 шт: термін постачання 14-21 дні (днів) |
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DI108S_T0_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 30A Case: SDIP 4L Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
на замовлення 325 шт: термін постачання 14-21 дні (днів) |
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DI108S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 30A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 7986 шт: термін постачання 21-30 дні (днів) |
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DI108S_T0_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 30A Case: SDIP 4L Electrical mounting: SMT Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 325 шт: термін постачання 21-30 дні (днів) |
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DI1510S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1.5A Case: SDIP 4L Electrical mounting: SMT Max. forward voltage: 1.1V Kind of package: reel; tape Max. forward impulse current: 50A Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DI1510_T0_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; 50A; DIP; THT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 50A Case: DIP Electrical mounting: THT Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DI154S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DI158S_R2_00001 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DMMT3904W-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT363; automotive Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.225W Case: SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DMMT3904W_R1_00001 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT363 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.225W Case: SOT363 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DXK210_T0_00001 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 75A; flat Case: DXK Max. off-state voltage: 1kV Load current: 2A Max. forward voltage: 1.05V Max. forward impulse current: 75A Kind of package: tube Type of bridge rectifier: single-phase Electrical mounting: THT Version: flat Leads: flat pin |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DXK310_T0_00001 | PanJit Semiconductor |
DXK310-T0 Flat single phase diode bridge rectif. |
на замовлення 233 шт: термін постачання 14-21 дні (днів) |
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DZ23C9V1_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 300mW; 9.1V; SMD; reel,tape; SOT23; 0.1uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: common cathode; double Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ER1002F_T0_00001 | PanJit Semiconductor |
ER1002F-T0 THT universal diodes |
на замовлення 2929 шт: термін постачання 14-21 дні (днів) |
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ER1602CT_T0_00001 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 16A Semiconductor structure: common cathode; double Kind of package: tube Max. forward impulse current: 125A Case: TO220AB Max. forward voltage: 0.95V Leakage current: 0.5mA Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ER2D_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMB Max. forward voltage: 0.95V Max. forward impulse current: 50A Leakage current: 0.15mA Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 768 шт: термін постачання 14-21 дні (днів) |
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ER2D_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMB Max. forward voltage: 0.95V Max. forward impulse current: 50A Leakage current: 0.15mA Kind of package: reel; tape |
на замовлення 768 шт: термін постачання 21-30 дні (днів) |
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ER3J_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMC Max. forward voltage: 1.7V Leakage current: 0.2mA Kind of package: reel; tape Max. forward impulse current: 100A кількість в упаковці: 1 шт |
на замовлення 678 шт: термін постачання 14-21 дні (днів) |
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ER3J_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMC Max. forward voltage: 1.7V Leakage current: 0.2mA Kind of package: reel; tape Max. forward impulse current: 100A |
на замовлення 678 шт: термін постачання 21-30 дні (днів) |
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ES1002FL_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SOD123F Max. forward voltage: 0.95V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 10µA кількість в упаковці: 1 шт |
на замовлення 2240 шт: термін постачання 14-21 дні (днів) |
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ES1002FL_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SOD123F Max. forward voltage: 0.95V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 10µA |
на замовлення 2240 шт: термін постачання 21-30 дні (днів) |
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| ES1006FL_R1_00001 | PanJit Semiconductor |
ES1006FL-R1 SMD universal diodes |
на замовлення 2505 шт: термін постачання 14-21 дні (днів) |
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ES1D_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 30A Leakage current: 0.15mA Features of semiconductor devices: glass passivated; superfast switching Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 40 шт: термін постачання 14-21 дні (днів) |
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ES1D_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 30A Leakage current: 0.15mA Features of semiconductor devices: glass passivated; superfast switching Kind of package: reel; tape |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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ES1G_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A Type of diode: rectifying Features of semiconductor devices: glass passivated; superfast switching Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Mounting: SMD Reverse recovery time: 35ns Leakage current: 0.15mA Load current: 1A Max. forward voltage: 1.25V Max. forward impulse current: 30A Max. off-state voltage: 0.4kV кількість в упаковці: 1 шт |
на замовлення 1590 шт: термін постачання 14-21 дні (днів) |
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ES1G_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A Type of diode: rectifying Features of semiconductor devices: glass passivated; superfast switching Kind of package: reel; tape Semiconductor structure: single diode Case: SMA Mounting: SMD Reverse recovery time: 35ns Leakage current: 0.15mA Load current: 1A Max. forward voltage: 1.25V Max. forward impulse current: 30A Max. off-state voltage: 0.4kV |
на замовлення 1590 шт: термін постачання 21-30 дні (днів) |
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ES1J_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.15mA Kind of package: reel; tape Features of semiconductor devices: glass passivated; superfast switching кількість в упаковці: 1 шт |
на замовлення 1790 шт: термін постачання 14-21 дні (днів) |
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ES1J_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.15mA Kind of package: reel; tape Features of semiconductor devices: glass passivated; superfast switching |
на замовлення 1790 шт: термін постачання 21-30 дні (днів) |
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ES1J_R2_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Leakage current: 0.15mA Kind of package: reel; tape Features of semiconductor devices: glass passivated; superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| ES2D_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 50A Leakage current: 1µA Features of semiconductor devices: glass passivated; superfast switching Kind of package: reel; tape кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ES2D_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 50A Leakage current: 1µA Features of semiconductor devices: glass passivated; superfast switching Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ES2G_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 1.25V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 1µA кількість в упаковці: 1 шт |
на замовлення 2003 шт: термін постачання 14-21 дні (днів) |
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ES2G_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; superfast switching Case: SMA Max. forward voltage: 1.25V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 1µA |
на замовлення 2003 шт: термін постачання 21-30 дні (днів) |
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| FR3D_R2_00001 | PanJit Semiconductor | FR3D-R2 SMD universal diodes |
на замовлення 5990 шт: термін постачання 14-21 дні (днів) |
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| GBJ2010_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 260A Electrical mounting: THT Case: GBJ2 Features of semiconductor devices: glass passivated Kind of package: tube Type of bridge rectifier: single-phase Max. forward voltage: 1.05V Load current: 20A Max. forward impulse current: 260A Max. off-state voltage: 1kV Version: flat Leads: flat pin |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBJ2506LV_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; 25A; flat; GBJ2; THT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Version: flat Case: GBJ2 Electrical mounting: THT Leads: flat pin Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBJ2506ULV_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 350A Version: flat Case: GBJ2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.76V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBJ2508HULV_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 350A Electrical mounting: THT Version: flat Max. forward voltage: 0.72V Leads: flat pin Case: GBJ2 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GBJ2508LV_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 500A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 0.5kA Electrical mounting: THT Version: flat Max. forward voltage: 0.82V Leads: flat pin Case: GBJ2 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBJ2510_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 25A Max. forward impulse current: 350A Electrical mounting: THT Version: flat Max. forward voltage: 1.05V Leads: flat pin Case: GBJ2 Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| GBJ3506ULV_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 0.4kA Electrical mounting: THT Version: flat Max. forward voltage: 0.75V Leads: flat pin Case: GBJ2 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| BZX84C12_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 12V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 12V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
кількість в упаковці: 1 шт
на замовлення 5250 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.25 грн |
| 66+ | 4.56 грн |
| 100+ | 3.06 грн |
| 250+ | 2.45 грн |
| 500+ | 2.19 грн |
| 1000+ | 1.84 грн |
| 3000+ | 1.65 грн |
| BZX84C12_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 12V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 12V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 5250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.71 грн |
| 109+ | 3.66 грн |
| 156+ | 2.55 грн |
| 250+ | 2.04 грн |
| 500+ | 1.82 грн |
| 1000+ | 1.54 грн |
| 3000+ | 1.38 грн |
| BZX84C15_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
кількість в упаковці: 1 шт
на замовлення 2840 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 5.14 грн |
| 72+ | 4.16 грн |
| 100+ | 3.60 грн |
| 250+ | 3.06 грн |
| 500+ | 2.45 грн |
| 1000+ | 2.20 грн |
| 3000+ | 1.84 грн |
| BZX84C15_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 2840 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.28 грн |
| 120+ | 3.34 грн |
| 133+ | 3.00 грн |
| 250+ | 2.55 грн |
| 500+ | 2.04 грн |
| 1000+ | 1.83 грн |
| BZX84C24_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.1µA
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C3V9-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 3.9V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 3.9V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C4V7_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
кількість в упаковці: 1 шт
на замовлення 2863 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 47+ | 6.66 грн |
| 64+ | 4.66 грн |
| 100+ | 4.02 грн |
| 250+ | 3.43 грн |
| 500+ | 2.74 грн |
| 738+ | 1.52 грн |
| 2029+ | 1.44 грн |
| BZX84C4V7_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
на замовлення 2863 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 78+ | 5.55 грн |
| 107+ | 3.74 грн |
| 119+ | 3.35 грн |
| 250+ | 2.86 грн |
| 500+ | 2.28 грн |
| 738+ | 1.26 грн |
| 2029+ | 1.20 грн |
| BZX84C5V1_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
кількість в упаковці: 1 шт
на замовлення 2847 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 38+ | 8.22 грн |
| 59+ | 5.06 грн |
| 106+ | 2.72 грн |
| 500+ | 2.08 грн |
| 1000+ | 1.92 грн |
| 3000+ | 1.77 грн |
| 9000+ | 1.68 грн |
| BZX84C5V1_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 2847 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.85 грн |
| 99+ | 4.06 грн |
| 176+ | 2.27 грн |
| 500+ | 1.73 грн |
| 1000+ | 1.60 грн |
| BZX84C5V6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
кількість в упаковці: 1 шт
на замовлення 1329 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.25 грн |
| 100+ | 6.34 грн |
| 500+ | 4.02 грн |
| 1000+ | 3.27 грн |
| 3000+ | 2.37 грн |
| 6000+ | 1.93 грн |
| 9000+ | 1.71 грн |
| BZX84C5V6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 1329 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.71 грн |
| 100+ | 5.09 грн |
| 500+ | 3.35 грн |
| 1000+ | 2.73 грн |
| BZX84C5V6_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 5.6V; SMD; reel,tape; SOT23; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C7V5W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 7.5V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 7.5V
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 7.5V; SMD; reel,tape; SOT323; single diode
Type of diode: Zener
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Semiconductor structure: single diode
Power dissipation: 0.2W
Tolerance: ±5%
Zener voltage: 7.5V
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| DI1010S_T0_00001 |
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Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 824 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.87 грн |
| 14+ | 21.71 грн |
| 50+ | 16.80 грн |
| 100+ | 14.99 грн |
| 109+ | 10.31 грн |
| 299+ | 9.74 грн |
| DI1010S_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| DI1010S_T0_00001 |
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Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 824 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.56 грн |
| 23+ | 17.42 грн |
| 50+ | 14.00 грн |
| 100+ | 12.49 грн |
| 109+ | 8.59 грн |
| 299+ | 8.11 грн |
| DI106S_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; 30A; SDIP 4L; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward voltage: 1.1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; 30A; SDIP 4L; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward voltage: 1.1V
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| DI106_T0_00001 |
Виробник: PanJit Semiconductor
DI106-T0 SMD/THT sing. phase diode bridge rectif.
DI106-T0 SMD/THT sing. phase diode bridge rectif.
на замовлення 278 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.87 грн |
| 129+ | 8.78 грн |
| 353+ | 8.30 грн |
| DI108S_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 7986 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.37 грн |
| 10+ | 30.04 грн |
| 100+ | 18.81 грн |
| 127+ | 8.88 грн |
| 348+ | 8.40 грн |
| 7500+ | 8.11 грн |
| DI108S_T0_00001 |
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Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
кількість в упаковці: 1 шт
на замовлення 325 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.87 грн |
| 14+ | 21.71 грн |
| 50+ | 16.80 грн |
| 100+ | 14.99 грн |
| 121+ | 9.36 грн |
| 332+ | 8.78 грн |
| DI108S_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 7986 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.98 грн |
| 17+ | 24.10 грн |
| 100+ | 15.67 грн |
| 127+ | 7.40 грн |
| 348+ | 7.00 грн |
| 7500+ | 6.76 грн |
| DI108S_T0_00001 |
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Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 325 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.56 грн |
| 23+ | 17.42 грн |
| 50+ | 14.00 грн |
| 100+ | 12.49 грн |
| 121+ | 7.80 грн |
| DI1510S_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 50A
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 1.5A
Case: SDIP 4L
Electrical mounting: SMT
Max. forward voltage: 1.1V
Kind of package: reel; tape
Max. forward impulse current: 50A
Features of semiconductor devices: glass passivated
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| DI1510_T0_00001 |
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Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; 50A; DIP; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 50A
Case: DIP
Electrical mounting: THT
Max. forward voltage: 1.1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; 50A; DIP; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 50A
Case: DIP
Electrical mounting: THT
Max. forward voltage: 1.1V
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| DI154S_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| DI158S_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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од. на суму грн.
| DMMT3904W-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT363; automotive
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT363; automotive
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive
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| DMMT3904W_R1_00001 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT363
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.225W; SOT363
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| DXK210_T0_00001 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 75A; flat
Case: DXK
Max. off-state voltage: 1kV
Load current: 2A
Max. forward voltage: 1.05V
Max. forward impulse current: 75A
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Version: flat
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 75A; flat
Case: DXK
Max. off-state voltage: 1kV
Load current: 2A
Max. forward voltage: 1.05V
Max. forward impulse current: 75A
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Version: flat
Leads: flat pin
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| DXK310_T0_00001 |
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Виробник: PanJit Semiconductor
DXK310-T0 Flat single phase diode bridge rectif.
DXK310-T0 Flat single phase diode bridge rectif.
на замовлення 233 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.58 грн |
| 108+ | 10.50 грн |
| 295+ | 9.93 грн |
| DZ23C9V1_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 9.1V; SMD; reel,tape; SOT23; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 300mW; 9.1V; SMD; reel,tape; SOT23; 0.1uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common cathode; double
Leakage current: 0.1µA
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| ER1002F_T0_00001 |
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Виробник: PanJit Semiconductor
ER1002F-T0 THT universal diodes
ER1002F-T0 THT universal diodes
на замовлення 2929 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 59.83 грн |
| 36+ | 31.79 грн |
| 98+ | 30.07 грн |
| ER1602CT_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 125A
Case: TO220AB
Max. forward voltage: 0.95V
Leakage current: 0.5mA
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; tube; Ifsm: 125A; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Kind of package: tube
Max. forward impulse current: 125A
Case: TO220AB
Max. forward voltage: 0.95V
Leakage current: 0.5mA
Reverse recovery time: 35ns
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| ER2D_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 768 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 34.95 грн |
| 15+ | 20.72 грн |
| 100+ | 12.89 грн |
| 153+ | 7.35 грн |
| 420+ | 6.97 грн |
| 2400+ | 6.68 грн |
| ER2D_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMB
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 0.15mA
Kind of package: reel; tape
на замовлення 768 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.13 грн |
| 24+ | 16.63 грн |
| 100+ | 10.74 грн |
| 153+ | 6.13 грн |
| 420+ | 5.81 грн |
| ER3J_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward voltage: 1.7V
Leakage current: 0.2mA
Kind of package: reel; tape
Max. forward impulse current: 100A
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward voltage: 1.7V
Leakage current: 0.2mA
Kind of package: reel; tape
Max. forward impulse current: 100A
кількість в упаковці: 1 шт
на замовлення 678 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.87 грн |
| 13+ | 23.20 грн |
| 25+ | 19.38 грн |
| 100+ | 15.56 грн |
| 400+ | 12.51 грн |
| 500+ | 12.12 грн |
| 800+ | 11.26 грн |
| ER3J_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward voltage: 1.7V
Leakage current: 0.2mA
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMC
Max. forward voltage: 1.7V
Leakage current: 0.2mA
Kind of package: reel; tape
Max. forward impulse current: 100A
на замовлення 678 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.56 грн |
| 22+ | 18.61 грн |
| 25+ | 16.15 грн |
| 100+ | 12.97 грн |
| 400+ | 10.42 грн |
| 500+ | 10.10 грн |
| ES1002FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 10µA
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 10µA
кількість в упаковці: 1 шт
на замовлення 2240 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 20.56 грн |
| 23+ | 13.38 грн |
| 100+ | 8.51 грн |
| 500+ | 6.41 грн |
| 1000+ | 5.69 грн |
| 3000+ | 4.73 грн |
| ES1002FL_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 10µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 10µA
на замовлення 2240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.13 грн |
| 38+ | 10.74 грн |
| 100+ | 7.09 грн |
| 500+ | 5.34 грн |
| 1000+ | 4.74 грн |
| ES1006FL_R1_00001 |
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Виробник: PanJit Semiconductor
ES1006FL-R1 SMD universal diodes
ES1006FL-R1 SMD universal diodes
на замовлення 2505 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 17.35 грн |
| 211+ | 5.36 грн |
| 579+ | 5.06 грн |
| ES1D_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 40 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.59 грн |
| 24+ | 12.89 грн |
| 100+ | 7.74 грн |
| 500+ | 5.64 грн |
| 1000+ | 4.94 грн |
| 1800+ | 4.56 грн |
| ES1D_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 17.99 грн |
| 39+ | 10.34 грн |
| ES1G_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Reverse recovery time: 35ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Reverse recovery time: 35ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
кількість в упаковці: 1 шт
на замовлення 1590 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.73 грн |
| 20+ | 15.37 грн |
| 100+ | 7.71 грн |
| 200+ | 5.63 грн |
| 500+ | 5.62 грн |
| 549+ | 5.32 грн |
| 1800+ | 5.12 грн |
| ES1G_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Reverse recovery time: 35ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Reverse recovery time: 35ns
Leakage current: 0.15mA
Load current: 1A
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
на замовлення 1590 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.27 грн |
| 33+ | 12.33 грн |
| 100+ | 6.43 грн |
| 200+ | 4.69 грн |
| 549+ | 4.43 грн |
| ES1J_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; superfast switching
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; superfast switching
кількість в упаковці: 1 шт
на замовлення 1790 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.81 грн |
| 18+ | 17.45 грн |
| 100+ | 9.49 грн |
| 500+ | 6.77 грн |
| 1000+ | 5.98 грн |
| 1800+ | 5.58 грн |
| ES1J_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; superfast switching
на замовлення 1790 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.84 грн |
| 29+ | 14.00 грн |
| 100+ | 7.91 грн |
| 500+ | 5.64 грн |
| 1000+ | 4.98 грн |
| ES1J_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; superfast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Leakage current: 0.15mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated; superfast switching
товару немає в наявності
В кошику
од. на суму грн.
| ES2D_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| ES2D_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Leakage current: 1µA
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| ES2G_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
кількість в упаковці: 1 шт
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
кількість в упаковці: 1 шт
на замовлення 2003 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 17.48 грн |
| 25+ | 12.09 грн |
| 146+ | 7.73 грн |
| 402+ | 7.25 грн |
| ES2G_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.25V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 2003 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.56 грн |
| 41+ | 9.71 грн |
| 146+ | 6.44 грн |
| 402+ | 6.05 грн |
| FR3D_R2_00001 |
Виробник: PanJit Semiconductor
FR3D-R2 SMD universal diodes
FR3D-R2 SMD universal diodes
на замовлення 5990 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.05 грн |
| 135+ | 8.40 грн |
| 371+ | 7.92 грн |
| GBJ2010_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 260A
Electrical mounting: THT
Case: GBJ2
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 260A
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 260A
Electrical mounting: THT
Case: GBJ2
Features of semiconductor devices: glass passivated
Kind of package: tube
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 20A
Max. forward impulse current: 260A
Max. off-state voltage: 1kV
Version: flat
Leads: flat pin
товару немає в наявності
В кошику
од. на суму грн.
| GBJ2506LV_T0_00601 |
Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; 25A; flat; GBJ2; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; 25A; flat; GBJ2; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| GBJ2506ULV_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.76V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 350A
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.76V
товару немає в наявності
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од. на суму грн.
| GBJ2508HULV_T0_00601 |
Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Max. forward voltage: 0.72V
Leads: flat pin
Case: GBJ2
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Max. forward voltage: 0.72V
Leads: flat pin
Case: GBJ2
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| GBJ2508LV_T0_00601 |
![]() |
Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 0.5kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 0.82V
Leads: flat pin
Case: GBJ2
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 500A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 0.5kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 0.82V
Leads: flat pin
Case: GBJ2
Kind of package: tube
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| GBJ2510_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ2
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 350A
Electrical mounting: THT
Version: flat
Max. forward voltage: 1.05V
Leads: flat pin
Case: GBJ2
Kind of package: tube
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| GBJ3506ULV_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 0.75V
Leads: flat pin
Case: GBJ2
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Electrical mounting: THT
Version: flat
Max. forward voltage: 0.75V
Leads: flat pin
Case: GBJ2
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.











