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PJE5UFN10A-AU_R1_000A1 PanJit Semiconductor PJE5UFN10A-AU Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Application: automotive industry
Case: DFN2510
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.6pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
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PJE5UFN10A_R1_00001 PanJit Semiconductor PJE5UFN10A.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4
Case: DFN2510-10
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.8pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
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PJE8407_R1_00001 PanJit Semiconductor PJE8407.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT523
Drain current: 0.5A
Gate-source voltage: 10V
Drain-source voltage: 20V
Polarisation: unipolar
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PJE8428_R1_00001 PanJit Semiconductor PJE8428 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Kind of package: reel; tape
Kind of channel: enhancement
Case: SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
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PJEC12VM1TA-AU_R1_000A1 PanJit Semiconductor PJEC12VM1TA-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Application: automotive industry
Semiconductor structure: bidirectional
Type of diode: TVS
Mounting: SMD
Case: SOT23
Capacitance: 10pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Breakdown voltage: 16.5V
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PJEC12VM1TA_R1_00001 PanJit Semiconductor PJEC12VM1TA Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Semiconductor structure: bidirectional
Type of diode: TVS
Mounting: SMD
Case: SOT23
Capacitance: 10pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Breakdown voltage: 16.5V
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PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU_R1_000A1 PanJit Semiconductor PJEC2415VM1WS-AU Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 0.16kW
Semiconductor structure: asymmetric; bidirectional
Version: ESD
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PJEC2415VM1WS_R1_00001 PanJit Semiconductor PJEC2415VM1WS.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Case: SOD323
Type of diode: TVS
Leakage current: 50nA
Number of channels: 1
Max. forward impulse current: 3A
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Peak pulse power dissipation: 0.16kW
Semiconductor structure: bidirectional
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PJEC24MTA-AU_R1_000A1 PanJit Semiconductor PJEC24MTA-AU.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Case: SOT23
Type of diode: TVS
Capacitance: 11pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Semiconductor structure: bidirectional
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PJEC24MTA_R1_00001 PanJit Semiconductor PJEC24MTA.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 11pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Semiconductor structure: bidirectional
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PJF18N20_T0_00001 PanJit Semiconductor PJx18N20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Case: ITO220AB
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJGBLC03-AU_R1_000A1 PanJit Semiconductor PJGBLC03-AU_C24C-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 4.75V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 4.75V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Application: automotive industry
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PJGBLC03C-AU_R1_000A1 PJGBLC03C-AU_R1_000A1 PanJit Semiconductor PJGBLC24C-AU Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 3pF
Version: ESD
Application: automotive industry
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PJGBLC03C_R1_00001 PJGBLC03C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 3pF
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PJGBLC03_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 5.25V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
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PJMB105N60FRC_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO263AB
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJMB125N60FRC_R2_00201 PanJit Semiconductor PJMB125N60FRC Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO263AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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PJMB210N65EC_R2_00601 PanJit Semiconductor PJMB210N65EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
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PJMBZ33A-AU_R1_007A1 PanJit Semiconductor PJMBZ5V6A-AU_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 31.35...34.65V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 50nA
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PJMBZ6V8A-AU_R1_007A1 PanJit Semiconductor PJMBZ5V6A-AU_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
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PJMD190N65FR2_L2_00601 PanJit Semiconductor PJMD190N65FR2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJMD280N60E1_L2_00601 PanJit Semiconductor PJMD280N60E1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJMD360N60EC_L2_00001 PJMD360N60EC_L2_00001 PanJit Semiconductor PJMD360N60EC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJMD580N60E1_L2_00001 PJMD580N60E1_L2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF060N65FR2_T0_00601 PanJit Semiconductor PJMF060N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48.3A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF080N65FR2_T0_00601 PanJit Semiconductor PJMF080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF099N60EC_T0_00601 PanJit Semiconductor PJMF099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
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PJMF105N60FRC_T0_00601 PanJit Semiconductor PJMF105N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF120N60EC_T0_00001 PJMF120N60EC_T0_00001 PanJit Semiconductor PJMF120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
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PJMF125N60FRC_T0_00601 PanJit Semiconductor PJMF125N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Gate-source voltage: 30V
Case: ITO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
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PJMF190N60E1_T0_00001 PJMF190N60E1_T0_00001 PanJit Semiconductor PJMF190N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Case: ITO220AB
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 40nC
Power dissipation: 38W
Pulsed drain current: 60A
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
3+202.76 грн
10+173.99 грн
25+160.54 грн
Мінімальне замовлення: 3 шт
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PJMF190N65FR2_T0_00601 PanJit Semiconductor PJMF190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF210N65EC_T0_00601 PJMF210N65EC_T0_00601 PanJit Semiconductor PJMF210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
3+205.47 грн
10+106.75 грн
Мінімальне замовлення: 3 шт
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PJMF280N60E1_T0_00001 PJMF280N60E1_T0_00001 PanJit Semiconductor PJMF280N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
3+164.74 грн
10+90.78 грн
50+82.37 грн
Мінімальне замовлення: 3 шт
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PJMF280N65E1_T0_00001 PJMF280N65E1_T0_00001 PanJit Semiconductor PJMF280N65E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 35.7W
Case: ITO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 0.28Ω
Drain current: 13.8A
Gate-source voltage: ±30V
Pulsed drain current: 41.4A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate charge: 30nC
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
3+179.22 грн
10+124.40 грн
Мінімальне замовлення: 3 шт
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PJMF360N60EC_T0_00001 PJMF360N60EC_T0_00001 PanJit Semiconductor PJMF360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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PJMF390N65EC_T0_00001 PJMF390N65EC_T0_00001 PanJit Semiconductor PJMF390N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
5+105.91 грн
10+71.44 грн
50+66.40 грн
Мінімальне замовлення: 5 шт
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PJMF580N60E1_T0_00001 PJMF580N60E1_T0_00001 PanJit Semiconductor PJMF580N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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PJMF990N65EC_T0_00001 PJMF990N65EC_T0_00001 PanJit Semiconductor PJMF990N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Mounting: THT
Kind of channel: enhancement
Case: ITO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 9.7nC
On-state resistance: 990mΩ
Power dissipation: 22.5W
Drain current: 4.7A
Pulsed drain current: 9.5A
Gate-source voltage: ±30V
Drain-source voltage: 650V
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PJMH040N60EC_T0_00201 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
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PJMH042N60FRC_T0_00201 PanJit Semiconductor PJMH042N60FRC Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 69A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH060N65FR2_T0_00601 PanJit Semiconductor PJMH060N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRCH_T0_00601 PanJit Semiconductor PJMH074N60FRCH.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRC_T0_00601 PJMH074N60FRC_T0_00601 PanJit Semiconductor PJMH074N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 84nC
On-state resistance: 74mΩ
Pulsed drain current: 117A
Power dissipation: 446W
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PJMH080N65FR2_T0_00601 PanJit Semiconductor PJMH080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH099N60EC_T0_00601 PanJit Semiconductor PJMH099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH105N60FRC_T0_00601 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH120N60EC_T0_00601 PJMH120N60EC_T0_00601 PanJit Semiconductor PJMH120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
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PJMH125N60FRC_T0_00601 PanJit Semiconductor PJMH125N60FRC Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO247AD-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
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PJMH190N60E1_T0_00601 PJMH190N60E1_T0_00601 PanJit Semiconductor PJMH190N60E1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.18Ω
Gate charge: 40nC
Power dissipation: 160W
Pulsed drain current: 62A
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PJMH190N65FR2_T0_00601 PanJit Semiconductor PJMH190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMK040N60EC_T0_00201 PanJit Semiconductor PJMK040N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMK074N60FRCH_T0_00201 PanJit Semiconductor PJMK074N60FRCH.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP060N65FR2_T0_00601 PanJit Semiconductor PJMP060N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP080N65FR2_T0_00601 PanJit Semiconductor PJMP080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP099N60EC_T0_00601 PanJit Semiconductor PJMP099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP105N60FRC_T0_00601 PanJit Semiconductor PJMP105N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
на замовлення 197 шт:
термін постачання 14-30 дні (днів)
2+283.32 грн
10+235.34 грн
50+197.52 грн
100+177.35 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PJMP125N60FRC_T0_00601 PanJit Semiconductor PJMP125N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
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PJMP190N60E1_T0_00601 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJE5UFN10A-AU_R1_000A1 PJE5UFN10A-AU
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Application: automotive industry
Case: DFN2510
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.6pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
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Мінімальне замовлення: 5000 шт
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PJE5UFN10A_R1_00001 PJE5UFN10A.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4
Case: DFN2510-10
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.8pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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PJE8407_R1_00001 PJE8407.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT523
Drain current: 0.5A
Gate-source voltage: 10V
Drain-source voltage: 20V
Polarisation: unipolar
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PJE8428_R1_00001 PJE8428
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Kind of package: reel; tape
Kind of channel: enhancement
Case: SOT523
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
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PJEC12VM1TA-AU_R1_000A1 PJEC12VM1TA-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Application: automotive industry
Semiconductor structure: bidirectional
Type of diode: TVS
Mounting: SMD
Case: SOT23
Capacitance: 10pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Breakdown voltage: 16.5V
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Мінімальне замовлення: 3000 шт
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PJEC12VM1TA_R1_00001 PJEC12VM1TA
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Semiconductor structure: bidirectional
Type of diode: TVS
Mounting: SMD
Case: SOT23
Capacitance: 10pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Breakdown voltage: 16.5V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU
PJEC2415VM1WS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 0.16kW
Semiconductor structure: asymmetric; bidirectional
Version: ESD
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PJEC2415VM1WS_R1_00001 PJEC2415VM1WS.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Case: SOD323
Type of diode: TVS
Leakage current: 50nA
Number of channels: 1
Max. forward impulse current: 3A
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Peak pulse power dissipation: 0.16kW
Semiconductor structure: bidirectional
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Мінімальне замовлення: 5000 шт
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PJEC24MTA-AU_R1_000A1 PJEC24MTA-AU.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Case: SOT23
Type of diode: TVS
Capacitance: 11pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Semiconductor structure: bidirectional
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Мінімальне замовлення: 3000 шт
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PJEC24MTA_R1_00001 PJEC24MTA.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 11pF
Leakage current: 50nA
Number of channels: 2
Max. forward impulse current: 4A
Max. off-state voltage: 24V
Breakdown voltage: 30.3V
Semiconductor structure: bidirectional
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Мінімальне замовлення: 3000 шт
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PJF18N20_T0_00001 PJx18N20.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Case: ITO220AB
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJGBLC03-AU_R1_000A1 PJGBLC03-AU_C24C-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 4.75V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 4.75V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Application: automotive industry
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Мінімальне замовлення: 5000 шт
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PJGBLC03C-AU_R1_000A1 PJGBLC24C-AU
PJGBLC03C-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 3pF
Version: ESD
Application: automotive industry
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PJGBLC03C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC03C_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 3pF
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PJGBLC03_R1_00001 PJGBLC03_C24C_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.25V; 1A; 0.35kW; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
PJMB105N60FRC_R2_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO263AB
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PJMB125N60FRC_R2_00201 PJMB125N60FRC
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO263AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PJMB210N65EC_R2_00601 PJMB210N65EC.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
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В кошику  од. на суму  грн.
PJMBZ33A-AU_R1_007A1 PJMBZ5V6A-AU_SER.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 31.35...34.65V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 50nA
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В кошику  од. на суму  грн.
PJMBZ6V8A-AU_R1_007A1 PJMBZ5V6A-AU_SER.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
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PJMD190N65FR2_L2_00601 PJMD190N65FR2
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
PJMD280N60E1_L2_00601 PJMD280N60E1.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJMD360N60EC_L2_00001 PJMD360N60EC.pdf
PJMD360N60EC_L2_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику  од. на суму  грн.
PJMD580N60E1_L2_00001
PJMD580N60E1_L2_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF060N65FR2_T0_00601 PJMF060N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48.3A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF080N65FR2_T0_00601 PJMF080N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF099N60EC_T0_00601 PJMF099N60EC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 88A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Gate charge: 60nC
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PJMF105N60FRC_T0_00601 PJMF105N60FRC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMF120N60EC_T0_00001 PJMF120N60EC.pdf
PJMF120N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
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PJMF125N60FRC_T0_00601 PJMF125N60FRC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Gate-source voltage: 30V
Case: ITO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
товару немає в наявності
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PJMF190N60E1_T0_00001 PJMF190N60E1.pdf
PJMF190N60E1_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Case: ITO220AB
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 40nC
Power dissipation: 38W
Pulsed drain current: 60A
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
3+202.76 грн
10+173.99 грн
25+160.54 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
PJMF190N65FR2_T0_00601 PJMF190N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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PJMF210N65EC_T0_00601 PJMF210N65EC.pdf
PJMF210N65EC_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 42A
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
3+205.47 грн
10+106.75 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
PJMF280N60E1_T0_00001 PJMF280N60E1.pdf
PJMF280N60E1_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
3+164.74 грн
10+90.78 грн
50+82.37 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
PJMF280N65E1_T0_00001 PJMF280N65E1.pdf
PJMF280N65E1_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 35.7W
Case: ITO220AB
Mounting: THT
Kind of package: tube
On-state resistance: 0.28Ω
Drain current: 13.8A
Gate-source voltage: ±30V
Pulsed drain current: 41.4A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate charge: 30nC
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
3+179.22 грн
10+124.40 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
PJMF360N60EC_T0_00001 PJMF360N60EC.pdf
PJMF360N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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PJMF390N65EC_T0_00001 PJMF390N65EC.pdf
PJMF390N65EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 29.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
5+105.91 грн
10+71.44 грн
50+66.40 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
PJMF580N60E1_T0_00001 PJMF580N60E1.pdf
PJMF580N60E1_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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PJMF990N65EC_T0_00001 PJMF990N65EC.pdf
PJMF990N65EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Mounting: THT
Kind of channel: enhancement
Case: ITO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 9.7nC
On-state resistance: 990mΩ
Power dissipation: 22.5W
Drain current: 4.7A
Pulsed drain current: 9.5A
Gate-source voltage: ±30V
Drain-source voltage: 650V
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PJMH040N60EC_T0_00201
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
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PJMH042N60FRC_T0_00201 PJMH042N60FRC
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 69A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH060N65FR2_T0_00601 PJMH060N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRCH_T0_00601 PJMH074N60FRCH.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRC_T0_00601 PJMH074N60FRC.pdf
PJMH074N60FRC_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 84nC
On-state resistance: 74mΩ
Pulsed drain current: 117A
Power dissipation: 446W
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PJMH080N65FR2_T0_00601 PJMH080N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH099N60EC_T0_00601 PJMH099N60EC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH105N60FRC_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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PJMH120N60EC_T0_00601 PJMH120N60EC.pdf
PJMH120N60EC_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
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PJMH125N60FRC_T0_00601 PJMH125N60FRC
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO247AD-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
товару немає в наявності
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PJMH190N60E1_T0_00601 PJMH190N60E1.pdf
PJMH190N60E1_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 62A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.18Ω
Gate charge: 40nC
Power dissipation: 160W
Pulsed drain current: 62A
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PJMH190N65FR2_T0_00601 PJMH190N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMK040N60EC_T0_00201 PJMK040N60EC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMK074N60FRCH_T0_00201 PJMK074N60FRCH.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP060N65FR2_T0_00601 PJMP060N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP080N65FR2_T0_00601 PJMP080N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP099N60EC_T0_00601 PJMP099N60EC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP105N60FRC_T0_00601 PJMP105N60FRC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
на замовлення 197 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна
2+283.32 грн
10+235.34 грн
50+197.52 грн
100+177.35 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PJMP125N60FRC_T0_00601 PJMP125N60FRC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
товару немає в наявності
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PJMP190N60E1_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.6A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
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