Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1480) > Сторінка 19 з 25
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| PJB240N04V7-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJC138K-AU_R1_000A1 | PanJit Semiconductor |
PJC138K-AU-R1 SMD N channel transistors |
на замовлення 2059 шт: термін постачання 14-21 дні (днів) |
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| PJC7400_R1_00001 | PanJit Semiconductor |
PJC7400-R1 SMD N channel transistors |
на замовлення 5455 шт: термін постачання 14-21 дні (днів) |
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| PJC7401_R1_00001 | PanJit Semiconductor |
PJC7401-R1 SMD P channel transistors |
на замовлення 205 шт: термін постачання 14-21 дні (днів) |
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PJC7404_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Kind of package: reel; tape Case: SOT323 Kind of channel: enhancement Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 1A Gate charge: 1.6nC On-state resistance: 0.4Ω Power dissipation: 0.35W Pulsed drain current: 4A Gate-source voltage: ±8V кількість в упаковці: 1 шт |
на замовлення 5990 шт: термін постачання 14-21 дні (днів) |
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PJC7404_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Kind of package: reel; tape Case: SOT323 Kind of channel: enhancement Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 1A Gate charge: 1.6nC On-state resistance: 0.4Ω Power dissipation: 0.35W Pulsed drain current: 4A Gate-source voltage: ±8V |
на замовлення 5990 шт: термін постачання 21-30 дні (днів) |
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PJC7407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW Mounting: SMD Case: SOT323 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: -1.3A Drain-source voltage: -20V Pulsed drain current: -5.2A Gate charge: 5.4nC On-state resistance: 0.2Ω Power dissipation: 0.35W Gate-source voltage: ±12V кількість в упаковці: 1 шт |
на замовлення 7545 шт: термін постачання 14-21 дні (днів) |
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PJC7407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW Mounting: SMD Case: SOT323 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: -1.3A Drain-source voltage: -20V Pulsed drain current: -5.2A Gate charge: 5.4nC On-state resistance: 0.2Ω Power dissipation: 0.35W Gate-source voltage: ±12V |
на замовлення 7545 шт: термін постачання 21-30 дні (днів) |
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PJC7428_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323 Case: SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.9nC On-state resistance: 4Ω Drain current: 0.3A Power dissipation: 0.35W Pulsed drain current: 0.6A Gate-source voltage: ±10V Drain-source voltage: 30V Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PJC7428_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323 Case: SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 0.9nC On-state resistance: 4Ω Drain current: 0.3A Power dissipation: 0.35W Pulsed drain current: 0.6A Gate-source voltage: ±10V Drain-source voltage: 30V Kind of package: reel; tape |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJC7439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -0.25A Gate charge: 1.1nC Power dissipation: 0.35W On-state resistance: 13Ω Gate-source voltage: ±20V Case: SOT323 Application: automotive industry |
на замовлення 2875 шт: термін постачання 21-30 дні (днів) |
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PJC7439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -0.25A Gate charge: 1.1nC Power dissipation: 0.35W On-state resistance: 13Ω Gate-source voltage: ±20V Case: SOT323 Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 2875 шт: термін постачання 14-21 дні (днів) |
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PJC7476_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PJC7476_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.35W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| PJD10P10A_L2_00601 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 10A Drain-source voltage: 100V Gate-source voltage: 20V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD13N10A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD16P06A_L2_00001 | PanJit Semiconductor |
PJD16P06A-L2 SMD P channel transistors |
на замовлення 10928 шт: термін постачання 14-21 дні (днів) |
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PJD18N20_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA Case: TO252AA Mounting: SMD On-state resistance: 0.16Ω Drain current: 11A Gate-source voltage: ±20V Power dissipation: 83W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 24nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJD25N03_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 25A Gate charge: 4.3nC On-state resistance: 33mΩ Power dissipation: 25W Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252AA Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 4000 шт: термін постачання 14-21 дні (днів) |
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PJD25N03_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 25A Gate charge: 4.3nC On-state resistance: 33mΩ Power dissipation: 25W Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252AA Kind of channel: enhancement |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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| PJD25N06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJD25N06A_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1537 шт: термін постачання 14-21 дні (днів) |
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PJD25N06A_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1537 шт: термін постачання 21-30 дні (днів) |
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| PJD25N10A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD30N04S-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 43A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD35N06A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA Polarisation: unipolar Case: TO252AA Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Drain current: 35A Drain-source voltage: 60V Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJD35P03_L2_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA Polarisation: unipolar Case: TO252AA Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Pulsed drain current: -140A Drain current: -35A Drain-source voltage: -30V Gate charge: 11nC On-state resistance: 30mΩ Power dissipation: 35W Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 2503 шт: термін постачання 14-21 дні (днів) |
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PJD35P03_L2_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA Polarisation: unipolar Case: TO252AA Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Pulsed drain current: -140A Drain current: -35A Drain-source voltage: -30V Gate charge: 11nC On-state resistance: 30mΩ Power dissipation: 35W Gate-source voltage: ±20V |
на замовлення 2503 шт: термін постачання 21-30 дні (днів) |
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| PJD40N04_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD40N06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 40A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Application: automotive industry Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD40N06A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 40A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD40P06A-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 39A; TO252AA Case: TO252AA Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: 20V Drain current: 39A Drain-source voltage: 60V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD45N06A_L2_00001 | PanJit Semiconductor |
PJD45N06A-L2 SMD N channel transistors |
на замовлення 239 шт: термін постачання 14-21 дні (днів) |
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| PJD50N04-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD50N04V-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD50P06A-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 49A; TO252AA Case: TO252AA Kind of package: reel; tape Mounting: SMD Drain-source voltage: 60V Drain current: 49A Gate-source voltage: 20V Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD60N04S-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD60N04V-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 154A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD60N06SA-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 66A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD80N03_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD90P03E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -88A Pulsed drain current: -219A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±25V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJE138K_R1_00001 | PanJit Semiconductor |
PJE138K-R1 SMD N channel transistors |
на замовлення 3089 шт: термін постачання 14-21 дні (днів) |
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PJE5V0U8TB-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.8÷10.2V; unidirectional; SOT523; reel,tape Type of diode: TVS array Breakdown voltage: 5.8...10.2V Semiconductor structure: unidirectional Mounting: SMD Case: SOT523 Max. off-state voltage: 5V Kind of package: reel; tape Application: automotive industry Version: ESD Leakage current: 1µA Capacitance: 0.8pF |
на замовлення 19921 шт: термін постачання 21-30 дні (днів) |
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PJE5V0U8TB-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 5.8÷10.2V; unidirectional; SOT523; reel,tape Type of diode: TVS array Breakdown voltage: 5.8...10.2V Semiconductor structure: unidirectional Mounting: SMD Case: SOT523 Max. off-state voltage: 5V Kind of package: reel; tape Application: automotive industry Version: ESD Leakage current: 1µA Capacitance: 0.8pF кількість в упаковці: 1 шт |
на замовлення 19921 шт: термін постачання 14-21 дні (днів) |
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PJE8403_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: SOT523 Drain-source voltage: -20V Pulsed drain current: -2.4A Drain current: -0.6A Gate charge: 2.2nC On-state resistance: 0.6Ω Power dissipation: 0.3W Gate-source voltage: ±8V Polarisation: unipolar кількість в упаковці: 1 шт |
на замовлення 3995 шт: термін постачання 14-21 дні (днів) |
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PJE8403_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: SOT523 Drain-source voltage: -20V Pulsed drain current: -2.4A Drain current: -0.6A Gate charge: 2.2nC On-state resistance: 0.6Ω Power dissipation: 0.3W Gate-source voltage: ±8V Polarisation: unipolar |
на замовлення 3995 шт: термін постачання 21-30 дні (днів) |
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| PJE8406TB89_R1_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89 Kind of channel: enhancement Mounting: SMD Case: SC89 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: 0.8A Gate-source voltage: 12V Drain-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJE8407_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Case: SOT523 Drain current: 0.5A Gate-source voltage: 10V Drain-source voltage: 20V Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJE8408_R1_00001 | PanJit Semiconductor |
PJE8408-R1 SMD N channel transistors |
на замовлення 3825 шт: термін постачання 14-21 дні (днів) |
|
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| PJEC12VM1TA-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; SOT23 Application: automotive industry Type of diode: TVS Case: SOT23 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJEC12VM1TA_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; SOT23 Type of diode: TVS Case: SOT23 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
PJEC2415VM1WS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323 Semiconductor structure: asymmetric; bidirectional Application: automotive industry Version: ESD Mounting: SMD Kind of package: reel; tape Case: SOD323 Type of diode: TVS Capacitance: 17pF Leakage current: 50nA Number of channels: 1 Max. off-state voltage: 15...24V Breakdown voltage: 17.1...30.3V Peak pulse power dissipation: 160W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PJF18N20_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB Case: ITO220AB Mounting: SMD Drain current: 18A Gate-source voltage: 20V Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJGBLC03C_R1_00001 | PanJit Semiconductor |
PJGBLC03C-R1 Protection diodes - arrays |
на замовлення 4020 шт: термін постачання 14-21 дні (днів) |
|
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| PJGBLC05C_R1_00001 | PanJit Semiconductor |
PJGBLC05C-R1 Protection diodes - arrays |
на замовлення 1486 шт: термін постачання 14-21 дні (днів) |
|
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| PJGBLC12C_R1_00001 | PanJit Semiconductor |
PJGBLC12C-R1 Protection diodes - arrays |
на замовлення 4655 шт: термін постачання 14-21 дні (днів) |
|
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| PJGBLC24C_R1_00001 | PanJit Semiconductor |
PJGBLC24C-R1 Protection diodes - arrays |
на замовлення 4430 шт: термін постачання 14-21 дні (днів) |
|
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| PJL9407_R2_00001 | PanJit Semiconductor | PJL9407-R2 SMD P channel transistors |
на замовлення 2479 шт: термін постачання 14-21 дні (днів) |
|
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| PJL9850_R2_00001 | PanJit Semiconductor |
PJL9850-R2 Multi channel transistors |
на замовлення 5047 шт: термін постачання 14-21 дні (днів) |
|
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| PJMB125N60FRC_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB Polarisation: unipolar Drain current: 30A Gate-source voltage: 30V Case: TO263AB Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. |
| PJB240N04V7-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJC138K-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJC138K-AU-R1 SMD N channel transistors
PJC138K-AU-R1 SMD N channel transistors
на замовлення 2059 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.79 грн |
| 280+ | 4.10 грн |
| 768+ | 3.88 грн |
| PJC7400_R1_00001 |
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Виробник: PanJit Semiconductor
PJC7400-R1 SMD N channel transistors
PJC7400-R1 SMD N channel transistors
на замовлення 5455 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.50 грн |
| 171+ | 6.70 грн |
| 470+ | 6.31 грн |
| PJC7401_R1_00001 |
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Виробник: PanJit Semiconductor
PJC7401-R1 SMD P channel transistors
PJC7401-R1 SMD P channel transistors
на замовлення 205 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.64 грн |
| 166+ | 6.89 грн |
| 453+ | 6.60 грн |
| PJC7404_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
на замовлення 5990 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.49 грн |
| 15+ | 20.36 грн |
| 100+ | 12.52 грн |
| 500+ | 9.12 грн |
| 1000+ | 8.05 грн |
| 3000+ | 6.50 грн |
| 6000+ | 5.82 грн |
| PJC7404_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Pulsed drain current: 4A
Gate-source voltage: ±8V
на замовлення 5990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.74 грн |
| 25+ | 16.34 грн |
| 100+ | 10.43 грн |
| 500+ | 7.60 грн |
| 1000+ | 6.71 грн |
| 3000+ | 5.42 грн |
| PJC7407_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
на замовлення 7545 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.17 грн |
| 18+ | 17.53 грн |
| 100+ | 9.90 грн |
| 500+ | 7.47 грн |
| 1000+ | 6.79 грн |
| 3000+ | 6.02 грн |
| 6000+ | 5.73 грн |
| PJC7407_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
на замовлення 7545 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.64 грн |
| 29+ | 14.07 грн |
| 100+ | 8.25 грн |
| 500+ | 6.23 грн |
| 1000+ | 5.66 грн |
| 3000+ | 5.01 грн |
| 6000+ | 4.77 грн |
| PJC7428_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.81 грн |
| 28+ | 10.88 грн |
| 100+ | 6.62 грн |
| 250+ | 5.57 грн |
| 500+ | 4.91 грн |
| PJC7428_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance: 4Ω
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.68 грн |
| 47+ | 8.73 грн |
| 100+ | 5.52 грн |
| 250+ | 4.64 грн |
| 500+ | 4.09 грн |
| PJC7439-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
на замовлення 2875 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.68 грн |
| 46+ | 8.98 грн |
| 100+ | 5.55 грн |
| 500+ | 4.04 грн |
| 1000+ | 3.53 грн |
| PJC7439-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2875 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.81 грн |
| 28+ | 11.19 грн |
| 100+ | 6.66 грн |
| 500+ | 4.85 грн |
| 1000+ | 4.23 грн |
| 3000+ | 3.45 грн |
| 6000+ | 3.27 грн |
| PJC7476_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.49 грн |
| 13+ | 24.79 грн |
| 100+ | 8.44 грн |
| 250+ | 7.57 грн |
| 500+ | 7.08 грн |
| PJC7476_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.74 грн |
| 21+ | 19.89 грн |
| 100+ | 7.04 грн |
| 250+ | 6.31 грн |
| 500+ | 5.90 грн |
| PJD10P10A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJD13N10A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJD16P06A_L2_00001 |
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Виробник: PanJit Semiconductor
PJD16P06A-L2 SMD P channel transistors
PJD16P06A-L2 SMD P channel transistors
на замовлення 10928 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.06 грн |
| 47+ | 24.84 грн |
| 127+ | 23.48 грн |
| 1000+ | 23.38 грн |
| PJD18N20_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
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| PJD25N03_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 4000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.98 грн |
| 11+ | 29.12 грн |
| 100+ | 19.12 грн |
| 250+ | 16.50 грн |
| 500+ | 15.24 грн |
| PJD25N03_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.32 грн |
| 18+ | 23.37 грн |
| 100+ | 15.93 грн |
| 250+ | 13.75 грн |
| 500+ | 12.70 грн |
| PJD25N06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
| PJD25N06A_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1537 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.12 грн |
| 10+ | 32.15 грн |
| 100+ | 22.61 грн |
| 500+ | 18.73 грн |
| 1000+ | 17.37 грн |
| 3000+ | 15.43 грн |
| 6000+ | 15.14 грн |
| PJD25N06A_L2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1537 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.93 грн |
| 16+ | 25.80 грн |
| 100+ | 18.84 грн |
| 500+ | 15.61 грн |
| 1000+ | 14.48 грн |
| PJD25N10A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| PJD30N04S-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
| PJD35N06A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain current: 35A
Drain-source voltage: 60V
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain current: 35A
Drain-source voltage: 60V
Gate-source voltage: 20V
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од. на суму грн.
| PJD35P03_L2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 2503 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 52.25 грн |
| 10+ | 33.66 грн |
| 100+ | 22.32 грн |
| 250+ | 19.51 грн |
| 500+ | 17.56 грн |
| 1000+ | 16.01 грн |
| 3000+ | 15.14 грн |
| PJD35P03_L2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
на замовлення 2503 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.54 грн |
| 15+ | 27.01 грн |
| 100+ | 18.60 грн |
| 250+ | 16.25 грн |
| 500+ | 14.64 грн |
| 1000+ | 13.34 грн |
| PJD40N04_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJD40N06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
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| PJD40N06A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
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| PJD40P06A-AU_L2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Application: automotive industry
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| PJD45N06A_L2_00001 |
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Виробник: PanJit Semiconductor
PJD45N06A-L2 SMD N channel transistors
PJD45N06A-L2 SMD N channel transistors
на замовлення 239 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 82.46 грн |
| 49+ | 23.58 грн |
| 134+ | 22.32 грн |
| 9000+ | 22.27 грн |
| PJD50N04-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
| PJD50N04V-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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од. на суму грн.
| PJD50P06A-AU_L2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 49A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 49A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| PJD60N04S-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD60N04V-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD60N06SA-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| PJD80N03_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJD90P03E-AU_L2_006A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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| PJE138K_R1_00001 |
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Виробник: PanJit Semiconductor
PJE138K-R1 SMD N channel transistors
PJE138K-R1 SMD N channel transistors
на замовлення 3089 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.87 грн |
| 225+ | 5.10 грн |
| 618+ | 4.82 грн |
| PJE5V0U8TB-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; SOT523; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; SOT523; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
на замовлення 19921 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.51 грн |
| 500+ | 18.44 грн |
| 1000+ | 15.77 грн |
| 4000+ | 7.68 грн |
| 8000+ | 5.26 грн |
| PJE5V0U8TB-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; SOT523; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; SOT523; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Leakage current: 1µA
Capacitance: 0.8pF
кількість в упаковці: 1 шт
на замовлення 19921 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.22 грн |
| 500+ | 22.98 грн |
| 1000+ | 18.92 грн |
| 4000+ | 9.22 грн |
| 8000+ | 6.31 грн |
| PJE8403_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT523
Drain-source voltage: -20V
Pulsed drain current: -2.4A
Drain current: -0.6A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.3W
Gate-source voltage: ±8V
Polarisation: unipolar
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT523
Drain-source voltage: -20V
Pulsed drain current: -2.4A
Drain current: -0.6A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.3W
Gate-source voltage: ±8V
Polarisation: unipolar
кількість в упаковці: 1 шт
на замовлення 3995 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 20.90 грн |
| 25+ | 12.19 грн |
| 100+ | 7.38 грн |
| 250+ | 6.21 грн |
| 500+ | 6.02 грн |
| PJE8403_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT523
Drain-source voltage: -20V
Pulsed drain current: -2.4A
Drain current: -0.6A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.3W
Gate-source voltage: ±8V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT523
Drain-source voltage: -20V
Pulsed drain current: -2.4A
Drain current: -0.6A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.3W
Gate-source voltage: ±8V
Polarisation: unipolar
на замовлення 3995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.42 грн |
| 42+ | 9.78 грн |
| 100+ | 6.15 грн |
| 250+ | 5.18 грн |
| 500+ | 5.01 грн |
| PJE8406TB89_R1_00701 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Kind of channel: enhancement
Mounting: SMD
Case: SC89
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.8A
Gate-source voltage: 12V
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Kind of channel: enhancement
Mounting: SMD
Case: SC89
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.8A
Gate-source voltage: 12V
Drain-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PJE8407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT523
Drain current: 0.5A
Gate-source voltage: 10V
Drain-source voltage: 20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT523
Drain current: 0.5A
Gate-source voltage: 10V
Drain-source voltage: 20V
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| PJE8408_R1_00001 |
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Виробник: PanJit Semiconductor
PJE8408-R1 SMD N channel transistors
PJE8408-R1 SMD N channel transistors
на замовлення 3825 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.85 грн |
| 170+ | 6.79 грн |
| 250+ | 6.35 грн |
| PJEC12VM1TA-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Application: automotive industry
Type of diode: TVS
Case: SOT23
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Application: automotive industry
Type of diode: TVS
Case: SOT23
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| PJEC12VM1TA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Case: SOT23
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Case: SOT23
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| PJEC2415VM1WS-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Semiconductor structure: asymmetric; bidirectional
Application: automotive industry
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 160W
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; SOD323
Semiconductor structure: asymmetric; bidirectional
Application: automotive industry
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Type of diode: TVS
Capacitance: 17pF
Leakage current: 50nA
Number of channels: 1
Max. off-state voltage: 15...24V
Breakdown voltage: 17.1...30.3V
Peak pulse power dissipation: 160W
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од. на суму грн.
| PJF18N20_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Case: ITO220AB
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Case: ITO220AB
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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од. на суму грн.
| PJGBLC03C_R1_00001 |
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Виробник: PanJit Semiconductor
PJGBLC03C-R1 Protection diodes - arrays
PJGBLC03C-R1 Protection diodes - arrays
на замовлення 4020 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.05 грн |
| 133+ | 8.64 грн |
| 365+ | 8.15 грн |
| PJGBLC05C_R1_00001 |
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Виробник: PanJit Semiconductor
PJGBLC05C-R1 Protection diodes - arrays
PJGBLC05C-R1 Protection diodes - arrays
на замовлення 1486 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.47 грн |
| 141+ | 8.15 грн |
| 386+ | 7.67 грн |
| PJGBLC12C_R1_00001 |
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Виробник: PanJit Semiconductor
PJGBLC12C-R1 Protection diodes - arrays
PJGBLC12C-R1 Protection diodes - arrays
на замовлення 4655 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 15.15 грн |
| 145+ | 8.15 грн |
| 390+ | 7.67 грн |
| 10000+ | 7.66 грн |
| PJGBLC24C_R1_00001 |
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Виробник: PanJit Semiconductor
PJGBLC24C-R1 Protection diodes - arrays
PJGBLC24C-R1 Protection diodes - arrays
на замовлення 4430 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 15.15 грн |
| 145+ | 8.15 грн |
| 390+ | 7.67 грн |
| 10000+ | 7.66 грн |
| PJL9407_R2_00001 |
Виробник: PanJit Semiconductor
PJL9407-R2 SMD P channel transistors
PJL9407-R2 SMD P channel transistors
на замовлення 2479 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.77 грн |
| 111+ | 10.38 грн |
| 304+ | 9.80 грн |
| 7500+ | 9.78 грн |
| PJL9850_R2_00001 |
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Виробник: PanJit Semiconductor
PJL9850-R2 Multi channel transistors
PJL9850-R2 Multi channel transistors
на замовлення 5047 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.48 грн |
| 66+ | 17.56 грн |
| 179+ | 16.59 грн |
| PJMB125N60FRC_R2_00201 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO263AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO263AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.






