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PJMH040N60EC_T0_00201 PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
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PJMH042N60FRC_T0_00201 PanJit Semiconductor PJMH042N60FRC Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 69A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH060N65FR2_T0_00601 PanJit Semiconductor PJMH060N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRCH_T0_00601 PanJit Semiconductor PJMH074N60FRCH.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRC_T0_00601 PJMH074N60FRC_T0_00601 PanJit Semiconductor PJMH074N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 74mΩ
Pulsed drain current: 117A
Power dissipation: 446W
Gate charge: 84nC
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PJMH080N65FR2_T0_00601 PanJit Semiconductor PJMH080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH099N60EC_T0_00601 PanJit Semiconductor PJMH099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH120N60EC_T0_00601 PJMH120N60EC_T0_00601 PanJit Semiconductor PJMH120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
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PJMH125N60FRC_T0_00601 PanJit Semiconductor PJMH125N60FRC Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO247AD-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
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PJMH190N60E1_T0_00601 PanJit Semiconductor PJMH190N60E1.pdf PJMH190N60E1-T0 THT N channel transistors
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
1+412.25 грн
9+136.79 грн
24+128.91 грн
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PJMH190N65FR2_T0_00601 PanJit Semiconductor PJMH190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMK040N60EC_T0_00201 PanJit Semiconductor PJMK040N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMK074N60FRCH_T0_00201 PanJit Semiconductor PJMK074N60FRCH.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP060N65FR2_T0_00601 PanJit Semiconductor PJMP060N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP080N65FR2_T0_00601 PanJit Semiconductor PJMP080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP099N60EC_T0_00601 PanJit Semiconductor PJMP099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
кількість в упаковці: 1 шт
на замовлення 60 шт:
термін постачання 14-21 дні (днів)
1+331.71 грн
10+286.14 грн
50+231.26 грн
100+207.64 грн
250+191.89 грн
500+184.02 грн
1000+165.32 грн
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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
2+276.42 грн
10+229.62 грн
50+192.71 грн
Мінімальне замовлення: 2
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PJMP125N60FRC_T0_00601 PanJit Semiconductor PJMP125N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
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PJMP130N65EC_T0_00001 PanJit Semiconductor PJMP130N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP190N65FR2_T0_00601 PanJit Semiconductor PJMP190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP210N65EC_T0_00601 PJMP210N65EC_T0_00601 PanJit Semiconductor PJMP210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
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PJMP360N60EC_T0_00001 PJMP360N60EC_T0_00001 PanJit Semiconductor PJMP360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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PJMP390N65EC_T0_00001 PJMP390N65EC_T0_00001 PanJit Semiconductor PJMP390N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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PJMP990N65EC_T0_00001 PJMP990N65EC_T0_00001 PanJit Semiconductor PJMP990N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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PJP125N06SA-AU_T0_006A1 PanJit Semiconductor PJP125N06SA-AU.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJP18N20_T0_00001 PanJit Semiconductor PJx18N20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJP75N06SA-AU_T0_006A1 PanJit Semiconductor PJP75N06SA-AU.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ1905_R1_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 0.5A; Idm: 1A; 500mW; DFN1006-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1906_R1_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Case: DFN1006-3
Gate-source voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1908-AU_R1_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ1916_R1_00201 PanJit Semiconductor PJQ1916.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1916_S1_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ4435EP-AU_R2_002A1 PanJit Semiconductor PJQ4435EP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Case: DFN3333-8
Gate-source voltage: 25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ4435EP_R2_00201 PanJit Semiconductor PJQ4435EP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
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PJQ4468AP-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Kind of package: reel; tape
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 60V
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PJQ4524P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 22.7W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ4540S6CP-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 168A; DFN3333-8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 168A
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
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PJQ4540S6VCP-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; DFN3333-8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 160A
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
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PJQ4544S6P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU_R2_002A1 PanJit Semiconductor PJQ4546VP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ5431E-AU_R2_006A1 PanJit Semiconductor PJQ5431E-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; DFN5060-8
Application: automotive industry
Case: DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 25V
Drain-source voltage: 30V
Drain current: 86A
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PJQ5453E-AU_R2_002A1 PanJit Semiconductor PJQ5453E-AU.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 40V; 16A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 25V
Drain-source voltage: 40V
Application: automotive industry
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PJQ5458A-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
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PJQ5528-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 6mΩ
Power dissipation: 15.6W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 244A
Application: automotive industry
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PJQ5528S6-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 67A
Application: automotive industry
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PJQ5528_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 61A
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PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1952 шт:
термін постачання 21-30 дні (днів)
4+113.04 грн
10+71.59 грн
100+51.50 грн
250+46.25 грн
500+42.97 грн
1000+40.26 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 1952 шт:
термін постачання 14-21 дні (днів)
3+135.65 грн
10+89.21 грн
100+61.80 грн
250+55.50 грн
500+51.57 грн
1000+48.32 грн
3000+44.09 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 PanJit Semiconductor PJQ5546V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJS6421_S1_00001 PanJit Semiconductor PJS6421.pdf PJS6421-S1 SMD P channel transistors
на замовлення 2941 шт:
термін постачання 14-21 дні (днів)
9+37.62 грн
117+10.04 грн
320+9.55 грн
24000+9.50 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PJS6601_S1_00001 PanJit Semiconductor PJS6601-S1 Multi channel transistors
на замовлення 2638 шт:
термін постачання 14-21 дні (днів)
9+37.20 грн
131+8.96 грн
360+8.46 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
на замовлення 4600 шт:
термін постачання 21-30 дні (днів)
42+10.60 грн
57+7.22 грн
100+5.39 грн
250+4.85 грн
500+4.49 грн
1000+4.32 грн
2500+4.06 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
кількість в упаковці: 1 шт
на замовлення 4600 шт:
термін постачання 14-21 дні (днів)
25+12.72 грн
35+8.99 грн
100+6.47 грн
250+5.83 грн
500+5.38 грн
1000+5.19 грн
2500+4.87 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
на замовлення 4768 шт:
термін постачання 21-30 дні (днів)
34+13.25 грн
47+8.77 грн
100+6.64 грн
250+5.90 грн
500+5.49 грн
1000+5.33 грн
2500+5.00 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
кількість в упаковці: 1 шт
на замовлення 4768 шт:
термін постачання 14-21 дні (днів)
20+15.90 грн
29+10.93 грн
100+7.97 грн
250+7.09 грн
500+6.59 грн
1000+6.40 грн
2500+6.00 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
PJSD05W_R1_00001 PanJit Semiconductor PJSD03W_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 7.2V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 7.2V
Case: SOD323
Mounting: SMD
Leakage current: 10µA
Peak pulse power dissipation: 0.35kW
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PJSD07TS-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
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В кошику  од. на суму  грн.
PJSD08TS-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
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В кошику  од. на суму  грн.
PJSD12TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
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PJMH040N60EC_T0_00201
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
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PJMH042N60FRC_T0_00201 PJMH042N60FRC
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 69A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH060N65FR2_T0_00601 PJMH060N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRCH_T0_00601 PJMH074N60FRCH.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRC_T0_00601 PJMH074N60FRC.pdf
PJMH074N60FRC_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 74mΩ
Pulsed drain current: 117A
Power dissipation: 446W
Gate charge: 84nC
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PJMH080N65FR2_T0_00601 PJMH080N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH099N60EC_T0_00601 PJMH099N60EC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH120N60EC_T0_00601 PJMH120N60EC.pdf
PJMH120N60EC_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
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PJMH125N60FRC_T0_00601 PJMH125N60FRC
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO247AD-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
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PJMH190N60E1_T0_00601 PJMH190N60E1.pdf
Виробник: PanJit Semiconductor
PJMH190N60E1-T0 THT N channel transistors
на замовлення 10 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+412.25 грн
9+136.79 грн
24+128.91 грн
В кошику  од. на суму  грн.
PJMH190N65FR2_T0_00601 PJMH190N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMK040N60EC_T0_00201 PJMK040N60EC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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PJMK074N60FRCH_T0_00201 PJMK074N60FRCH.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP060N65FR2_T0_00601 PJMP060N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP080N65FR2_T0_00601 PJMP080N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP099N60EC_T0_00601 PJMP099N60EC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
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PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
кількість в упаковці: 1 шт
на замовлення 60 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
1+331.71 грн
10+286.14 грн
50+231.26 грн
100+207.64 грн
250+191.89 грн
500+184.02 грн
1000+165.32 грн
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PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
на замовлення 60 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+276.42 грн
10+229.62 грн
50+192.71 грн
Мінімальне замовлення: 2
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PJMP125N60FRC_T0_00601 PJMP125N60FRC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
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PJMP130N65EC_T0_00001 PJMP130N65EC.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP190N65FR2_T0_00601 PJMP190N65FR2
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP210N65EC_T0_00601 PJMP210N65EC.pdf
PJMP210N65EC_T0_00601
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
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PJMP360N60EC_T0_00001 PJMP360N60EC.pdf
PJMP360N60EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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PJMP390N65EC_T0_00001 PJMP390N65EC.pdf
PJMP390N65EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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PJMP990N65EC_T0_00001 PJMP990N65EC.pdf
PJMP990N65EC_T0_00001
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 47.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
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PJP125N06SA-AU_T0_006A1 PJP125N06SA-AU.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJP18N20_T0_00001 PJx18N20.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJP75N06SA-AU_T0_006A1 PJP75N06SA-AU.pdf
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ1905_R1_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 0.5A; Idm: 1A; 500mW; DFN1006-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1906_R1_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Case: DFN1006-3
Gate-source voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1908-AU_R1_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ1916_R1_00201 PJQ1916.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1916_S1_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ4435EP-AU_R2_002A1 PJQ4435EP-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 45A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 45A
Case: DFN3333-8
Gate-source voltage: 25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ4435EP_R2_00201 PJQ4435EP.pdf
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
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PJQ4468AP-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Kind of package: reel; tape
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 60V
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PJQ4524P-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 22.7W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ4540S6CP-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 168A; DFN3333-8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 168A
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
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PJQ4540S6VCP-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; DFN3333-8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 160A
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
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PJQ4544S6P-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; DFN3333-8
Case: DFN3333-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU.pdf
PJQ4546VP-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ5431E-AU_R2_006A1 PJQ5431E-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 86A; DFN5060-8
Application: automotive industry
Case: DFN5060-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 25V
Drain-source voltage: 30V
Drain current: 86A
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PJQ5453E-AU_R2_002A1 PJQ5453E-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 40V; 16A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 25V
Drain-source voltage: 40V
Application: automotive industry
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PJQ5458A-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
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PJQ5528-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 6mΩ
Power dissipation: 15.6W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 244A
Application: automotive industry
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PJQ5528S6-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 67A
Application: automotive industry
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PJQ5528_R2_00201
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 61A
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PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1952 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+113.04 грн
10+71.59 грн
100+51.50 грн
250+46.25 грн
500+42.97 грн
1000+40.26 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 1952 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
3+135.65 грн
10+89.21 грн
100+61.80 грн
250+55.50 грн
500+51.57 грн
1000+48.32 грн
3000+44.09 грн
Мінімальне замовлення: 3
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PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJS6421_S1_00001 PJS6421.pdf
Виробник: PanJit Semiconductor
PJS6421-S1 SMD P channel transistors
на замовлення 2941 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
9+37.62 грн
117+10.04 грн
320+9.55 грн
24000+9.50 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PJS6601_S1_00001
Виробник: PanJit Semiconductor
PJS6601-S1 Multi channel transistors
на замовлення 2638 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
9+37.20 грн
131+8.96 грн
360+8.46 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD03TS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
на замовлення 4600 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.60 грн
57+7.22 грн
100+5.39 грн
250+4.85 грн
500+4.49 грн
1000+4.32 грн
2500+4.06 грн
Мінімальне замовлення: 42
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PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD03TS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
кількість в упаковці: 1 шт
на замовлення 4600 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
25+12.72 грн
35+8.99 грн
100+6.47 грн
250+5.83 грн
500+5.38 грн
1000+5.19 грн
2500+4.87 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
на замовлення 4768 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+13.25 грн
47+8.77 грн
100+6.64 грн
250+5.90 грн
500+5.49 грн
1000+5.33 грн
2500+5.00 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
кількість в упаковці: 1 шт
на замовлення 4768 шт:
термін постачання 14-21 дні (днів)
Кількість Ціна
20+15.90 грн
29+10.93 грн
100+7.97 грн
250+7.09 грн
500+6.59 грн
1000+6.40 грн
2500+6.00 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
PJSD05W_R1_00001 PJSD03W_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.2V; 0.35kW; SOD323
Type of diode: TVS
Breakdown voltage: 7.2V
Case: SOD323
Mounting: SMD
Leakage current: 10µA
Peak pulse power dissipation: 0.35kW
товару немає в наявності
В кошику  од. на суму  грн.
PJSD07TS-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
товару немає в наявності
В кошику  од. на суму  грн.
PJSD08TS-AU_R1_007A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
товару немає в наявності
В кошику  од. на суму  грн.
PJSD12TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
товару немає в наявності
В кошику  од. на суму  грн.
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