Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1429) > Сторінка 17 з 24
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Manufacturer series: P6SMBJ Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 430 шт: термін постачання 14-30 дні (днів) |
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| P6SMBJ70A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 70V Breakdown voltage: 77.8...86V Max. forward impulse current: 5.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6SMBJ85CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 4.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| P6SMBJ9.0A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 39A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| P6SMBJ9.0CA-AU_R1_006A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 39A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| P6SMBJ9.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 39A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| P6SMBJ90A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 4.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| P6SMBJ90CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 4.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
| PBHV8050SA_R1_00501 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 500V Collector current: 0.15A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Type of transistor: NPN Case: SOT23 Collector current: 1A Power dissipation: 1.25W Pulsed collector current: 3A Collector-emitter voltage: 100V Current gain: 100...300 Frequency: 100MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 43 шт: термін постачання 14-30 дні (днів) |
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| PBHV8110DW_R2_00701 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223 Mounting: SMD Type of transistor: NPN Case: SOT223 Collector current: 1A Power dissipation: 2.6W Collector-emitter voltage: 100V Frequency: 100MHz Polarisation: bipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PBHV9110DW_R2_00701 | PanJit Semiconductor |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 1A; 2.6W; SOT223 Mounting: SMD Type of transistor: PNP Case: SOT223 Collector current: 1A Power dissipation: 2.6W Collector-emitter voltage: 100V Polarisation: bipolar Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PCDF0465G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.8V Power dissipation: 53.6W Kind of package: tube Technology: SiC Leakage current: 40µA Max. load current: 20A Max. forward impulse current: 360A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PCDF0465G3_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.5V Power dissipation: 53.6W Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PCDF0665G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA Kind of package: tube Case: ITO220AC Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Leakage current: 50µA Load current: 6A Max. forward voltage: 1.8V Max. load current: 24A Max. forward impulse current: 0.32kA Power dissipation: 70.8W Max. off-state voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PCDF0665G3_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V Kind of package: Ammo Pack Case: ITO220AC Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Load current: 6A Max. forward voltage: 1.5V Power dissipation: 70.8W Max. off-state voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PCDH20120CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 52A Max. forward impulse current: 720A Leakage current: 0.1mA Kind of package: tube Max. forward voltage: 2V Power dissipation: 167.8W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PCDH20120CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. load current: 72A Max. forward impulse current: 0.92kA Leakage current: 0.1mA Kind of package: tube Max. forward voltage: 1.9V Power dissipation: 209W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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| PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.4V Max. load current: 48A Max. forward impulse current: 704A Leakage current: 0.1mA Power dissipation: 138W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 384A Leakage current: 0.1mA Power dissipation: 90W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PDZ10B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 10V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Tolerance: ±2% Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PDZ10B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 10V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PDZ24B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 24V; SMD; SOD323; reel,tape; single diode Power dissipation: 0.4W Tolerance: ±2% Zener voltage: 24V Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PDZ24B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 24V; SMD; SOD323; reel,tape; single diode Power dissipation: 0.4W Tolerance: ±2% Zener voltage: 24V Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PDZ33B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 33V; SMD; SOD323; reel,tape; single diode Power dissipation: 0.4W Tolerance: ±2% Zener voltage: 33V Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PDZ33B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 33V; SMD; SOD323; reel,tape; single diode Power dissipation: 0.4W Tolerance: ±2% Zener voltage: 33V Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD Case: SOD323 Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PDZ5.1B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodes Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PE1605C4E6-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: unidirectional Mounting: SMD Leakage current: 1µA Capacitance: 0.6pF Case: SOT563 Number of channels: 4 Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| PE1605C4E6-AU_S1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: unidirectional Mounting: SMD Leakage current: 1µA Capacitance: 0.6pF Case: SOT563 Number of channels: 4 Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
| PE1605C4E6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 6V Max. forward impulse current: 4A Semiconductor structure: unidirectional Mounting: SMD Leakage current: 1µA Capacitance: 0.6pF Case: SOT563 Number of channels: 4 |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT23-6; Ch: 4 Case: SOT23-6 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Semiconductor structure: unidirectional Version: ESD Application: Ethernet; USB |
на замовлення 8085 шт: термін постачання 14-30 дні (днів) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT363; Ch: 4 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD Case: SOT363 |
на замовлення 2965 шт: термін постачання 14-30 дні (днів) |
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| PE3324C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Type of diode: TVS Capacitance: 30pF Leakage current: 1µA Max. forward impulse current: 1A Number of channels: 2 Max. off-state voltage: 24V Breakdown voltage: 29.5V Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
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PE4105C1ES_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1 Mounting: SMD Version: ESD Kind of package: reel; tape Case: SOD523 Type of diode: TVS array Semiconductor structure: unidirectional Capacitance: 0.12nF Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 13A Max. off-state voltage: 5V Breakdown voltage: 6...7.5V |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
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| PE4105C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Mounting: SMD Case: SOT23 Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.12nF Leakage current: 1µA Number of channels: 2 Max. forward impulse current: 1A Max. off-state voltage: 5V Breakdown voltage: 7.5V Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4105C3C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3 Mounting: SMD Case: SOT363 Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.12nF Leakage current: 1µA Number of channels: 3 Max. forward impulse current: 13A Max. off-state voltage: 5V Breakdown voltage: 6V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4136C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Case: SOT23 Mounting: SMD Number of channels: 2 Application: automotive industry Semiconductor structure: unidirectional Type of diode: TVS Capacitance: 0.1nF Leakage current: 0.8µA Max. forward impulse current: 1A Max. off-state voltage: 36V Breakdown voltage: 40V Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4136C2A_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2 Case: SOT23 Mounting: SMD Number of channels: 2 Semiconductor structure: unidirectional Type of diode: TVS Capacitance: 0.1nF Leakage current: 1µA Max. forward impulse current: 1A Max. off-state voltage: 36V Breakdown voltage: 40V Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4205M1Q_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1 Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 25A Semiconductor structure: unidirectional Mounting: SMD Max. off-state voltage: 5V Leakage current: 1µA Number of channels: 1 Case: DFN1006-2 Capacitance: 0.25nF |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||
| PE4312C2A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 15.5V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Leakage current: 1µA Number of channels: 2 Capacitance: 90pF Peak pulse power dissipation: 0.35kW Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4312C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 8.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 8.5V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Leakage current: 1µA Number of channels: 2 Capacitance: 90pF Peak pulse power dissipation: 0.35kW |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4312C2C-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOT323; Ch: 2 Type of diode: TVS Breakdown voltage: 13.2V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOT323 Max. off-state voltage: 12V Leakage current: 1µA Number of channels: 2 Capacitance: 90pF Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4312CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 15.5V; 8.3A; unidirectional; SOD323; Ch: 1 Type of diode: TVS Breakdown voltage: 15.5V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 12V Leakage current: 1µA Number of channels: 1 Capacitance: 90pF |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| PE4312ES_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1 Type of diode: TVS Breakdown voltage: 13.2V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 12V Leakage current: 1µA Number of channels: 1 Capacitance: 90pF |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| PE4336ES_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1 Type of diode: TVS Breakdown voltage: 39.6V Max. forward impulse current: 3.3A Semiconductor structure: unidirectional Mounting: SMD Case: SOD523 Max. off-state voltage: 36V Leakage current: 1µA Number of channels: 1 Capacitance: 20pF |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||
| PE4715L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1 Number of channels: 1 Max. off-state voltage: 15V Breakdown voltage: 16.5V Max. forward impulse current: 45A Application: automotive industry Case: DFN1610-2 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.48nF Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4715L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1 Number of channels: 1 Max. off-state voltage: 15V Breakdown voltage: 16.5V Max. forward impulse current: 45A Case: DFN1610-2 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.48nF Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4724L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1 Case: DFN1610-2 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.28nF Leakage current: 1µA Number of channels: 1 Max. off-state voltage: 24V Breakdown voltage: 26.4V Max. forward impulse current: 32A Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4724L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1 Case: DFN1610-2 Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Capacitance: 0.28nF Leakage current: 1µA Number of channels: 1 Max. off-state voltage: 24V Breakdown voltage: 26.4V Max. forward impulse current: 32A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE4728L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1 Type of diode: TVS Mounting: SMD Case: DFN1610-2 Semiconductor structure: unidirectional Application: automotive industry Capacitance: 0.23nF Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 27.5A Max. off-state voltage: 28V Breakdown voltage: 30V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PE9180C1A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2 Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 80V Breakdown voltage: 100V Max. forward impulse current: 20A Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Leakage current: 30nA Capacitance: 0.6pF Number of channels: 2 Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| PEC1305S1Q_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 1A; bidirectional; DFN0603-2; Ch: 1 Mounting: SMD Case: DFN0603-2 Type of diode: TVS Capacitance: 0.25pF Leakage current: 50nA Number of channels: 1 Max. forward impulse current: 1A Max. off-state voltage: 5V Breakdown voltage: 6V Semiconductor structure: bidirectional |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||
| PEC1605M1Q-AU_R1_005A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1 Mounting: SMD Capacitance: 0.6pF Type of diode: TVS Leakage current: 75nA Number of channels: 1 Max. forward impulse current: 2A Max. off-state voltage: 5V Breakdown voltage: 6.8V Application: automotive industry Semiconductor structure: bidirectional Case: DFN1006-2 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||
 |
PEC1605M1Q_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape Mounting: SMD Capacitance: 0.6pF Semiconductor structure: bidirectional Case: DFN1006-2 Version: ESD Kind of package: reel; tape Type of diode: TVS Leakage current: 75nA Max. off-state voltage: 5.5V Breakdown voltage: 6.8...11.2V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
|
PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23 Application: automotive industry Semiconductor structure: bidirectional; double Mounting: SMD Version: ESD Kind of package: reel; tape Case: SOT23 Type of diode: TVS array Capacitance: 30pF Leakage current: 50nA Max. forward impulse current: 7A Number of channels: 2 Max. off-state voltage: 24V Breakdown voltage: 26.2...30.3V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PEC4105C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.5V Max. forward impulse current: 20A Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Leakage current: 0.5µA Capacitance: 80pF Number of channels: 2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PEC4105CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.5V Max. forward impulse current: 20A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 0.5µA Capacitance: 80pF Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| P6SMBJ7.5CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 430 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 25.34 грн |
| 27+ | 15.97 грн |
| 100+ | 10.84 грн |
| P6SMBJ70A_R2_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 77.8÷86V; 5.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...86V
Max. forward impulse current: 5.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| P6SMBJ85CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 94.4÷104V; 4.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 4.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| P6SMBJ9.0A_R2_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| P6SMBJ9.0CA-AU_R1_006A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| P6SMBJ9.0CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| P6SMBJ90A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| P6SMBJ90CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| PBHV8050SA_R1_00501 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
товару немає в наявності
В кошику
од. на суму грн.
| PBHV8110DA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 28+ | 16.29 грн |
| 43+ | 10.09 грн |
| PBHV8110DW_R2_00701 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: NPN
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: NPN
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Frequency: 100MHz
Polarisation: bipolar
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PBHV9110DW_R2_00701 |
Виробник: PanJit Semiconductor
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 2.6W; SOT223
Mounting: SMD
Type of transistor: PNP
Case: SOT223
Collector current: 1A
Power dissipation: 2.6W
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PCDF0465G1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
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| PCDF0465G3_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
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| PCDF0665G1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 50µA
Load current: 6A
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 50µA
Load current: 6A
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Max. off-state voltage: 650V
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| PCDF0665G3_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Kind of package: Ammo Pack
Case: ITO220AC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Kind of package: Ammo Pack
Case: ITO220AC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Max. off-state voltage: 650V
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| PCDH20120CCG1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 167.8W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 167.8W
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| PCDH20120CCGB_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 1.9V
Power dissipation: 209W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 1.9V
Power dissipation: 209W
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| PCDH2065CCG1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 361.16 грн |
| 5+ | 302.59 грн |
| 30+ | 267.28 грн |
| PCDH2065CCGB_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
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| PCDH2065CCGC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
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| PDZ10B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
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| PDZ10B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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| PDZ24B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 24V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 24V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 24V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 24V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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| PDZ24B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 24V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 24V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 24V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 24V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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| PDZ33B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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| PDZ33B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; SOD323; reel,tape; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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| PDZ5.1B-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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| PDZ5.1B_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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| PE1605C4E6-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
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Мінімальне замовлення: 4000 шт
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| PE1605C4E6-AU_S1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
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Мінімальне замовлення: 4000 шт
В кошику
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| PE1605C4E6_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| PE1805C4A6_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT23-6; Ch: 4
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Version: ESD
Application: Ethernet; USB
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT23-6; Ch: 4
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Semiconductor structure: unidirectional
Version: ESD
Application: Ethernet; USB
на замовлення 8085 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 72+ | 6.34 грн |
| 79+ | 5.38 грн |
| 100+ | 5.01 грн |
| 250+ | 4.58 грн |
| 500+ | 4.35 грн |
| 1000+ | 4.30 грн |
| PE1805C4C6_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT363; Ch: 4
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Case: SOT363
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT363; Ch: 4
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Case: SOT363
на замовлення 2965 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 13.58 грн |
| 55+ | 7.73 грн |
| 100+ | 5.41 грн |
| 500+ | 4.43 грн |
| 1000+ | 4.12 грн |
| PE3324C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Max. forward impulse current: 1A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 29.5V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Max. forward impulse current: 1A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 29.5V
Peak pulse power dissipation: 0.35kW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PE4105C1ES_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 4.53 грн |
| 143+ | 2.94 грн |
| 204+ | 2.07 грн |
| 500+ | 1.77 грн |
| 1000+ | 1.68 грн |
| PE4105C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
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Мінімальне замовлення: 3000 шт
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| PE4105C3C6_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
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Мінімальне замовлення: 3000 шт
В кошику
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| PE4136C2A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 0.8µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 0.8µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
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Мінімальне замовлення: 3000 шт
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| PE4136C2A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 1µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 1µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
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Мінімальне замовлення: 3000 шт
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| PE4205M1Q_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 1
Case: DFN1006-2
Capacitance: 0.25nF
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 1
Case: DFN1006-2
Capacitance: 0.25nF
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Мінімальне замовлення: 10000 шт
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| PE4312C2A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| PE4312C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 8.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 8.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
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Мінімальне замовлення: 3000 шт
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| PE4312C2C-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOT323; Ch: 2
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOT323; Ch: 2
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| PE4312CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
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Мінімальне замовлення: 5000 шт
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| PE4312ES_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
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Мінімальне замовлення: 5000 шт
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| PE4336ES_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 39.6V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 20pF
Category: Protection diodes - arrays
Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 39.6V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 20pF
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Мінімальне замовлення: 5000 шт
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| PE4715L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
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Мінімальне замовлення: 3000 шт
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| PE4715L1Q_R1_00201 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 45A; unidirectional; DFN1610-2; Ch: 1
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.5V
Max. forward impulse current: 45A
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.48nF
Leakage current: 1µA
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Мінімальне замовлення: 3000 шт
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| PE4724L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| PE4724L1Q_R1_00201 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
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Мінімальне замовлення: 3000 шт
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| PE4728L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Application: automotive industry
Capacitance: 0.23nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 27.5A
Max. off-state voltage: 28V
Breakdown voltage: 30V
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Application: automotive industry
Capacitance: 0.23nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 27.5A
Max. off-state voltage: 28V
Breakdown voltage: 30V
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Мінімальне замовлення: 3000 шт
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| PE9180C1A-AU_R1_007A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 80V
Breakdown voltage: 100V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 30nA
Capacitance: 0.6pF
Number of channels: 2
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 80V
Breakdown voltage: 100V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 30nA
Capacitance: 0.6pF
Number of channels: 2
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| PEC11SD03M1Q_R1_00501 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
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| PEC1305S1Q_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; bidirectional; DFN0603-2; Ch: 1
Mounting: SMD
Case: DFN0603-2
Type of diode: TVS
Capacitance: 0.25pF
Leakage current: 50nA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; bidirectional; DFN0603-2; Ch: 1
Mounting: SMD
Case: DFN0603-2
Type of diode: TVS
Capacitance: 0.25pF
Leakage current: 50nA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Semiconductor structure: bidirectional
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Мінімальне замовлення: 10000 шт
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| PEC1605M1Q-AU_R1_005A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
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Мінімальне замовлення: 10000 шт
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| PEC1605M1Q_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
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| PEC3324C2A-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Application: automotive industry
Semiconductor structure: bidirectional; double
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOT23
Type of diode: TVS array
Capacitance: 30pF
Leakage current: 50nA
Max. forward impulse current: 7A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 26.2...30.3V
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Application: automotive industry
Semiconductor structure: bidirectional; double
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOT23
Type of diode: TVS array
Capacitance: 30pF
Leakage current: 50nA
Max. forward impulse current: 7A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 26.2...30.3V
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В кошику
од. на суму грн.
| PEC4105C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PEC4105CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.