Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1394) > Сторінка 17 з 24
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| PJA3416AE_R1_00001 | PanJit Semiconductor |
PJA3416AE-R1 SMD N channel transistors |
на замовлення 2210 шт: термін постачання 14-21 дні (днів) |
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| PJA3428_R1_00001 | PanJit Semiconductor |
PJA3428-R1 SMD N channel transistors |
на замовлення 7390 шт: термін постачання 14-21 дні (днів) |
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| PJA3430-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.6A Kind of channel: enhancement Application: automotive industry Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 8A Drain current: 2A Gate charge: 1.8nC On-state resistance: 0.4Ω Power dissipation: 1.25W Kind of channel: enhancement Gate-source voltage: ±8V кількість в упаковці: 1 шт |
на замовлення 2565 шт: термін постачання 14-21 дні (днів) |
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 8A Drain current: 2A Gate charge: 1.8nC On-state resistance: 0.4Ω Power dissipation: 1.25W Kind of channel: enhancement Gate-source voltage: ±8V |
на замовлення 2565 шт: термін постачання 21-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 6.4A Drain current: 1.6A Gate charge: 1.5nC On-state resistance: 570mΩ Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±8V |
на замовлення 1770 шт: термін постачання 21-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 6.4A Drain current: 1.6A Gate charge: 1.5nC On-state resistance: 570mΩ Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±8V кількість в упаковці: 1 шт |
на замовлення 1770 шт: термін постачання 14-21 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±8V |
на замовлення 1455 шт: термін постачання 21-30 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±8V кількість в упаковці: 1 шт |
на замовлення 1455 шт: термін постачання 14-21 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Kind of channel: enhancement Gate-source voltage: ±8V кількість в упаковці: 1 шт |
на замовлення 7014 шт: термін постачання 14-21 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -4.4A Drain current: -1.1A Gate charge: 1.6nC On-state resistance: 0.97Ω Power dissipation: 1.25W Kind of channel: enhancement Gate-source voltage: ±8V |
на замовлення 7014 шт: термін постачання 21-30 дні (днів) |
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 1.5A Drain current: 0.75A Gate charge: 1.4nC On-state resistance: 3Ω Power dissipation: 0.5W Kind of channel: enhancement Gate-source voltage: ±10V кількість в упаковці: 1 шт |
на замовлення 3770 шт: термін постачання 14-21 дні (днів) |
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 1.5A Drain current: 0.75A Gate charge: 1.4nC On-state resistance: 3Ω Power dissipation: 0.5W Kind of channel: enhancement Gate-source voltage: ±10V |
на замовлення 3770 шт: термін постачання 21-30 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -1A Drain current: -500mA Gate charge: 1.4nC On-state resistance: 6Ω Power dissipation: 0.5W Kind of channel: enhancement Gate-source voltage: ±10V кількість в упаковці: 1 шт |
на замовлення 5960 шт: термін постачання 14-21 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -1A Drain current: -500mA Gate charge: 1.4nC On-state resistance: 6Ω Power dissipation: 0.5W Kind of channel: enhancement Gate-source voltage: ±10V |
на замовлення 5960 шт: термін постачання 21-30 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 4.8A Drain current: 1.2A Gate charge: 0.9nC On-state resistance: 0.9Ω Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±12V |
на замовлення 2988 шт: термін постачання 21-30 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 4.8A Drain current: 1.2A Gate charge: 0.9nC On-state resistance: 0.9Ω Power dissipation: 1.25W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±12V кількість в упаковці: 1 шт |
на замовлення 2988 шт: термін постачання 14-21 дні (днів) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Pulsed drain current: 1.2A Drain current: 0.5A Gate charge: 0.95nC On-state resistance: 6Ω Power dissipation: 0.5W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±20V |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Pulsed drain current: 1.2A Drain current: 0.5A Gate charge: 0.95nC On-state resistance: 6Ω Power dissipation: 0.5W Kind of channel: enhancement Application: automotive industry Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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| PJA3440-AU_R1_000A1 | PanJit Semiconductor |
PJA3440-AU-R1 SMD N channel transistors |
на замовлення 5500 шт: термін постачання 14-21 дні (днів) |
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| PJA3441-AU_R1_000A1 | PanJit Semiconductor |
PJA3441-AU-R1 SMD P channel transistors |
на замовлення 5725 шт: термін постачання 14-21 дні (днів) |
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PJA3441_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 108mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1863 шт: термін постачання 14-21 дні (днів) |
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PJA3441_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.1A Pulsed drain current: -12.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 108mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1863 шт: термін постачання 21-30 дні (днів) |
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| PJA3460-AU_R1_000A1 | PanJit Semiconductor | PJA3460-AU-R1 SMD N channel transistors |
на замовлення 1013 шт: термін постачання 14-21 дні (днів) |
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PJA3460_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 3485 шт: термін постачання 14-21 дні (днів) |
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PJA3460_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 9.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3485 шт: термін постачання 21-30 дні (днів) |
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| PJA3463_R1_00001 | PanJit Semiconductor |
PJA3463-R1 SMD P channel transistors |
на замовлення 3042 шт: термін постачання 14-21 дні (днів) |
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| PJB120N03S-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJB120N04S-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 58A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJB120N04V-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 166A Case: TO220AB Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJB240N04S7-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJB240N04V7-AU_R2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 60A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJC138K-AU_R1_000A1 | PanJit Semiconductor |
PJC138K-AU-R1 SMD N channel transistors |
на замовлення 2059 шт: термін постачання 14-21 дні (днів) |
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| PJC7400_R1_00001 | PanJit Semiconductor |
PJC7400-R1 SMD N channel transistors |
на замовлення 5455 шт: термін постачання 14-21 дні (днів) |
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| PJC7401_R1_00001 | PanJit Semiconductor |
PJC7401-R1 SMD P channel transistors |
на замовлення 3105 шт: термін постачання 14-21 дні (днів) |
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| PJC7404_R1_00001 | PanJit Semiconductor |
PJC7404-R1 SMD N channel transistors |
на замовлення 5990 шт: термін постачання 14-21 дні (днів) |
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PJC7407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW Mounting: SMD Case: SOT323 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: -1.3A Drain-source voltage: -20V Pulsed drain current: -5.2A Gate charge: 5.4nC On-state resistance: 0.2Ω Power dissipation: 0.35W Gate-source voltage: ±12V кількість в упаковці: 1 шт |
на замовлення 7545 шт: термін постачання 14-21 дні (днів) |
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PJC7407_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW Mounting: SMD Case: SOT323 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: -1.3A Drain-source voltage: -20V Pulsed drain current: -5.2A Gate charge: 5.4nC On-state resistance: 0.2Ω Power dissipation: 0.35W Gate-source voltage: ±12V |
на замовлення 7545 шт: термін постачання 21-30 дні (днів) |
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| PJC7410_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 38A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJC7428_R1_00001 | PanJit Semiconductor |
PJC7428-R1 SMD N channel transistors |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PJC7439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -0.25A Gate charge: 1.1nC Power dissipation: 0.35W On-state resistance: 13Ω Gate-source voltage: ±20V Case: SOT323 Application: automotive industry |
на замовлення 2875 шт: термін постачання 21-30 дні (днів) |
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PJC7439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -1A Drain current: -0.25A Gate charge: 1.1nC Power dissipation: 0.35W On-state resistance: 13Ω Gate-source voltage: ±20V Case: SOT323 Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 2875 шт: термін постачання 14-21 дні (днів) |
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| PJC7476_R1_00001 | PanJit Semiconductor |
PJC7476-R1 SMD N channel transistors |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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| PJD10P10A_L2_00601 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 10A Drain-source voltage: 100V Gate-source voltage: 20V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD11N06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD11N06A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD13N10A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD16P06A_L2_00001 | PanJit Semiconductor |
PJD16P06A-L2 SMD P channel transistors |
на замовлення 10928 шт: термін постачання 14-21 дні (днів) |
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PJD18N20_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA Case: TO252AA Mounting: SMD On-state resistance: 0.16Ω Drain current: 11A Gate-source voltage: ±20V Power dissipation: 83W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 24nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJD25N03_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 25A Gate charge: 4.3nC On-state resistance: 33mΩ Power dissipation: 25W Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252AA Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 4000 шт: термін постачання 14-21 дні (днів) |
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PJD25N03_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 25A Gate charge: 4.3nC On-state resistance: 33mΩ Power dissipation: 25W Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252AA Kind of channel: enhancement |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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| PJD25N06A-AU_L2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
PJD25N06A_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1537 шт: термін постачання 14-21 дні (днів) |
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PJD25N06A_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1537 шт: термін постачання 21-30 дні (днів) |
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| PJD25N10A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD30N04S-AU_L2_002A1 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 43A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJD35N06A_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA Polarisation: unipolar Case: TO252AA Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Drain current: 35A Drain-source voltage: 60V Gate-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
PJD35P03_L2_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA Polarisation: unipolar Case: TO252AA Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Pulsed drain current: -140A Drain current: -35A Drain-source voltage: -30V Gate charge: 11nC On-state resistance: 30mΩ Power dissipation: 35W Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 2503 шт: термін постачання 14-21 дні (днів) |
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PJD35P03_L2_00001 | PanJit Semiconductor |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA Polarisation: unipolar Case: TO252AA Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Pulsed drain current: -140A Drain current: -35A Drain-source voltage: -30V Gate charge: 11nC On-state resistance: 30mΩ Power dissipation: 35W Gate-source voltage: ±20V |
на замовлення 2503 шт: термін постачання 21-30 дні (днів) |
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| PJD40N04_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| PJA3416AE_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3416AE-R1 SMD N channel transistors
PJA3416AE-R1 SMD N channel transistors
на замовлення 2210 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.46 грн |
| 189+ | 6.18 грн |
| 520+ | 5.85 грн |
| PJA3428_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3428-R1 SMD N channel transistors
PJA3428-R1 SMD N channel transistors
на замовлення 7390 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.04 грн |
| 296+ | 3.96 грн |
| 812+ | 3.74 грн |
| PJA3430-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PJA3430_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
на замовлення 2565 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.20 грн |
| 25+ | 12.37 грн |
| 100+ | 7.42 грн |
| 500+ | 5.36 грн |
| 1000+ | 4.65 грн |
| 3000+ | 4.53 грн |
| PJA3430_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
на замовлення 2565 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.66 грн |
| 42+ | 9.92 грн |
| 100+ | 6.18 грн |
| 500+ | 4.47 грн |
| 1000+ | 3.88 грн |
| PJA3432-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
на замовлення 1770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.78 грн |
| 44+ | 9.51 грн |
| 100+ | 5.97 грн |
| 500+ | 4.34 грн |
| PJA3432-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
на замовлення 1770 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.14 грн |
| 26+ | 11.85 грн |
| 100+ | 7.16 грн |
| 500+ | 5.21 грн |
| PJA3433-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
на замовлення 1455 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.78 грн |
| 44+ | 9.51 грн |
| 100+ | 5.99 грн |
| 500+ | 4.84 грн |
| PJA3433-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
на замовлення 1455 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.14 грн |
| 26+ | 11.85 грн |
| 100+ | 7.18 грн |
| 500+ | 5.81 грн |
| PJA3433_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
на замовлення 7014 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.31 грн |
| 23+ | 13.90 грн |
| 100+ | 8.08 грн |
| 500+ | 5.87 грн |
| 1000+ | 5.25 грн |
| PJA3433_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Gate-source voltage: ±8V
на замовлення 7014 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.43 грн |
| 37+ | 11.15 грн |
| 100+ | 6.73 грн |
| 500+ | 4.90 грн |
| 1000+ | 4.37 грн |
| PJA3434_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
на замовлення 3770 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.26 грн |
| 24+ | 12.88 грн |
| 100+ | 7.87 грн |
| 500+ | 5.75 грн |
| 1000+ | 5.02 грн |
| 3000+ | 4.12 грн |
| PJA3434_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1.5A
Drain current: 0.75A
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
на замовлення 3770 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.55 грн |
| 40+ | 10.33 грн |
| 100+ | 6.56 грн |
| 500+ | 4.79 грн |
| 1000+ | 4.18 грн |
| 3000+ | 3.44 грн |
| PJA3435_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
на замовлення 5960 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.55 грн |
| 20+ | 15.84 грн |
| 100+ | 9.86 грн |
| 500+ | 7.39 грн |
| 1000+ | 6.54 грн |
| 3000+ | 5.44 грн |
| 6000+ | 4.85 грн |
| PJA3435_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -1A
Drain current: -500mA
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Gate-source voltage: ±10V
на замовлення 5960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.96 грн |
| 33+ | 12.71 грн |
| 100+ | 8.22 грн |
| 500+ | 6.16 грн |
| 1000+ | 5.45 грн |
| 3000+ | 4.53 грн |
| PJA3436-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
на замовлення 2988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.08 грн |
| 34+ | 12.22 грн |
| 100+ | 7.58 грн |
| 500+ | 5.56 грн |
| 1000+ | 4.93 грн |
| PJA3436-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
на замовлення 2988 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.49 грн |
| 21+ | 15.23 грн |
| 100+ | 9.09 грн |
| 500+ | 6.67 грн |
| 1000+ | 5.91 грн |
| 3000+ | 4.95 грн |
| 6000+ | 4.72 грн |
| PJA3438-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.73 грн |
| 28+ | 14.93 грн |
| 100+ | 9.35 грн |
| 500+ | 6.80 грн |
| PJA3438-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.67 грн |
| 17+ | 18.60 грн |
| 100+ | 11.22 грн |
| 500+ | 8.16 грн |
| 1000+ | 7.13 грн |
| 3000+ | 5.80 грн |
| 6000+ | 5.10 грн |
| PJA3440-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3440-AU-R1 SMD N channel transistors
PJA3440-AU-R1 SMD N channel transistors
на замовлення 5500 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.15 грн |
| 133+ | 8.76 грн |
| 366+ | 8.36 грн |
| PJA3441-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3441-AU-R1 SMD P channel transistors
PJA3441-AU-R1 SMD P channel transistors
на замовлення 5725 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.51 грн |
| 153+ | 7.68 грн |
| 420+ | 7.28 грн |
| PJA3441_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1863 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.79 грн |
| 16+ | 20.23 грн |
| 100+ | 14.86 грн |
| 250+ | 10.43 грн |
| 500+ | 9.74 грн |
| 1000+ | 8.96 грн |
| 3000+ | 8.17 грн |
| PJA3441_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1863 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.49 грн |
| 26+ | 16.24 грн |
| 100+ | 12.38 грн |
| 250+ | 8.69 грн |
| 500+ | 8.12 грн |
| 1000+ | 7.46 грн |
| PJA3460-AU_R1_000A1 |
Виробник: PanJit Semiconductor
PJA3460-AU-R1 SMD N channel transistors
PJA3460-AU-R1 SMD N channel transistors
на замовлення 1013 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.10 грн |
| 149+ | 7.87 грн |
| 411+ | 7.38 грн |
| 9000+ | 7.36 грн |
| PJA3460_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 3485 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.55 грн |
| 19+ | 16.86 грн |
| 100+ | 9.35 грн |
| 500+ | 7.18 грн |
| 1000+ | 6.89 грн |
| PJA3460_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3485 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.96 грн |
| 31+ | 13.53 грн |
| 100+ | 7.79 грн |
| 500+ | 5.99 грн |
| 1000+ | 5.74 грн |
| PJA3463_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3463-R1 SMD P channel transistors
PJA3463-R1 SMD P channel transistors
на замовлення 3042 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.86 грн |
| 125+ | 9.35 грн |
| 344+ | 8.86 грн |
| PJB120N03S-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJB120N04S-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJB120N04V-AU_R2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJB240N04S7-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJB240N04V7-AU_R2_002A1 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJC138K-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJC138K-AU-R1 SMD N channel transistors
PJC138K-AU-R1 SMD N channel transistors
на замовлення 2059 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.31 грн |
| 280+ | 4.18 грн |
| 768+ | 3.96 грн |
| PJC7400_R1_00001 |
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Виробник: PanJit Semiconductor
PJC7400-R1 SMD N channel transistors
PJC7400-R1 SMD N channel transistors
на замовлення 5455 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.96 грн |
| 171+ | 6.89 грн |
| 470+ | 6.49 грн |
| PJC7401_R1_00001 |
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Виробник: PanJit Semiconductor
PJC7401-R1 SMD P channel transistors
PJC7401-R1 SMD P channel transistors
на замовлення 3105 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.24 грн |
| 177+ | 6.59 грн |
| 486+ | 6.30 грн |
| PJC7404_R1_00001 |
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Виробник: PanJit Semiconductor
PJC7404-R1 SMD N channel transistors
PJC7404-R1 SMD N channel transistors
на замовлення 5990 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.91 грн |
| 177+ | 6.59 грн |
| 486+ | 6.30 грн |
| PJC7407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
кількість в упаковці: 1 шт
на замовлення 7545 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.55 грн |
| 18+ | 17.78 грн |
| 100+ | 10.04 грн |
| 500+ | 7.58 грн |
| 1000+ | 6.89 грн |
| 3000+ | 6.10 грн |
| 6000+ | 5.81 грн |
| PJC7407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
на замовлення 7545 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.96 грн |
| 29+ | 14.27 грн |
| 100+ | 8.36 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.74 грн |
| 3000+ | 5.08 грн |
| 6000+ | 4.84 грн |
| PJC7410_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJC7428_R1_00001 |
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Виробник: PanJit Semiconductor
PJC7428-R1 SMD N channel transistors
PJC7428-R1 SMD N channel transistors
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.95 грн |
| 213+ | 5.51 грн |
| 584+ | 5.21 грн |
| PJC7439-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
на замовлення 2875 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.90 грн |
| 46+ | 9.10 грн |
| 100+ | 5.63 грн |
| 500+ | 4.10 грн |
| 1000+ | 3.58 грн |
| PJC7439-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
Power dissipation: 0.35W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT323
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2875 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 19.08 грн |
| 28+ | 11.34 грн |
| 100+ | 6.75 грн |
| 500+ | 4.92 грн |
| 1000+ | 4.29 грн |
| 3000+ | 3.50 грн |
| 6000+ | 3.32 грн |
| PJC7476_R1_00001 |
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Виробник: PanJit Semiconductor
PJC7476-R1 SMD N channel transistors
PJC7476-R1 SMD N channel transistors
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.27 грн |
| 147+ | 7.97 грн |
| 403+ | 7.58 грн |
| 9000+ | 7.56 грн |
| PJD10P10A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJD11N06A-AU_L2_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJD11N06A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJD13N10A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJD16P06A_L2_00001 |
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Виробник: PanJit Semiconductor
PJD16P06A-L2 SMD P channel transistors
PJD16P06A-L2 SMD P channel transistors
на замовлення 10928 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.96 грн |
| 47+ | 25.29 грн |
| 127+ | 23.91 грн |
| PJD18N20_L2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
товару немає в наявності
В кошику
од. на суму грн.
| PJD25N03_L2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 4000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.63 грн |
| 11+ | 29.53 грн |
| 100+ | 19.39 грн |
| 250+ | 16.73 грн |
| 500+ | 15.45 грн |
| PJD25N03_L2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 100A; 25W; TO252AA
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 25A
Gate charge: 4.3nC
On-state resistance: 33mΩ
Power dissipation: 25W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252AA
Kind of channel: enhancement
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.86 грн |
| 18+ | 23.70 грн |
| 100+ | 16.16 грн |
| 250+ | 13.94 грн |
| 500+ | 12.87 грн |
| PJD25N06A-AU_L2_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJD25N06A_L2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1537 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.81 грн |
| 10+ | 32.60 грн |
| 100+ | 22.93 грн |
| 500+ | 18.99 грн |
| 1000+ | 17.61 грн |
| 3000+ | 15.65 грн |
| 6000+ | 15.55 грн |
| PJD25N06A_L2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1537 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.51 грн |
| 16+ | 26.16 грн |
| 100+ | 19.11 грн |
| 500+ | 15.83 грн |
| 1000+ | 14.68 грн |
| PJD25N10A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PJD30N04S-AU_L2_002A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PJD35N06A_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain current: 35A
Drain-source voltage: 60V
Gate-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain current: 35A
Drain-source voltage: 60V
Gate-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
| PJD35P03_L2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 2503 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 52.99 грн |
| 10+ | 34.13 грн |
| 100+ | 22.63 грн |
| 250+ | 19.78 грн |
| 500+ | 17.81 грн |
| 1000+ | 16.24 грн |
| 3000+ | 15.35 грн |
| PJD35P03_L2_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; Idm: -140A; 35W; TO252AA
Polarisation: unipolar
Case: TO252AA
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -140A
Drain current: -35A
Drain-source voltage: -30V
Gate charge: 11nC
On-state resistance: 30mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
на замовлення 2503 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.16 грн |
| 15+ | 27.39 грн |
| 100+ | 18.86 грн |
| 250+ | 16.48 грн |
| 500+ | 14.84 грн |
| 1000+ | 13.53 грн |
| PJD40N04_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.




