Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1480) > Сторінка 17 з 25
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| P6SMBJ7.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
P6SMBJ7.5CA-R1 Bidirectional TVS SMD diodes |
на замовлення 430 шт: термін постачання 14-21 дні (днів) |
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| P6SMBJ75A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMBJ78A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMBJ85CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMBJ90A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: unidirectional Case: SMB Mounting: SMD Manufacturer series: P6SMBJ Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P6SMBJ90CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Semiconductor structure: bidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PBHV8050SA_R1_00501 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23 Mounting: SMD Collector current: 0.15A Power dissipation: 0.5W Collector-emitter voltage: 500V Frequency: 50MHz Polarisation: bipolar Case: SOT23 Type of transistor: NPN Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Type of transistor: NPN Case: SOT23 Collector current: 1A Power dissipation: 1.25W Pulsed collector current: 3A Collector-emitter voltage: 100V Current gain: 100...300 Frequency: 100MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 3093 шт: термін постачання 21-30 дні (днів) |
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Type of transistor: NPN Case: SOT23 Collector current: 1A Power dissipation: 1.25W Pulsed collector current: 3A Collector-emitter voltage: 100V Current gain: 100...300 Frequency: 100MHz Kind of package: reel; tape Polarisation: bipolar кількість в упаковці: 1 шт |
на замовлення 3093 шт: термін постачання 14-21 дні (днів) |
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| PCDB1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO263 Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.8V Max. load current: 40A Leakage current: 50µA Max. forward impulse current: 0.55kA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDF0465G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 1.8V Max. load current: 20A Max. forward impulse current: 360A Leakage current: 40µA Power dissipation: 53.6W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDF0665G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 50µA Max. forward voltage: 1.8V Max. load current: 24A Max. forward impulse current: 0.32kA Power dissipation: 70.8W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDF0665G3_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky switching; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: ITO220AC Kind of package: Ammo Pack Max. forward voltage: 1.5V Power dissipation: 70.8W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDF0865G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Leakage current: 60µA Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 0.48kA Power dissipation: 78.1W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 30 шт: термін постачання 14-21 дні (днів) |
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 40A Max. forward impulse current: 0.64kA Leakage current: 70µA Power dissipation: 98W Kind of package: tube |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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| PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.4V Max. load current: 48A Max. forward impulse current: 704A Leakage current: 0.1mA Power dissipation: 138W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.8V Max. load current: 28A Max. forward impulse current: 384A Leakage current: 0.1mA Power dissipation: 90W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PCDP05120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V Case: TO220AC Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 50µA Max. forward voltage: 2V Load current: 5A Max. load current: 40A Power dissipation: 129.3W Max. forward impulse current: 520A Max. off-state voltage: 1.2kV Technology: SiC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PCDP15120G1_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2V Max. load current: 120A Max. forward impulse current: 880A Leakage current: 140µA Power dissipation: 223.9W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry |
на замовлення 2570 шт: термін постачання 21-30 дні (днів) |
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PDZ5.1B-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.75µA Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 2570 шт: термін постачання 14-21 дні (днів) |
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PDZ5.1B_R1_00001 | PanJit Semiconductor |
Category: SMD Zener diodesDescription: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.4W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PE1605C4A6-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE1605C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE1605C4A6_S1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD Case: SOT23-6 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD кількість в упаковці: 1 шт |
на замовлення 8480 шт: термін постачання 14-21 дні (днів) |
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PE1805C4A6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD Case: SOT23-6 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD |
на замовлення 8480 шт: термін постачання 21-30 дні (днів) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape Case: SOT363 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD кількість в упаковці: 1 шт |
на замовлення 2970 шт: термін постачання 14-21 дні (днів) |
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PE1805C4C6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape Case: SOT363 Kind of package: reel; tape Mounting: SMD Type of diode: TVS array Capacitance: 0.8pF Leakage current: 1µA Number of channels: 4 Max. forward impulse current: 5A Max. off-state voltage: 5V Breakdown voltage: 6...9V Application: Ethernet; USB Semiconductor structure: unidirectional Version: ESD |
на замовлення 2970 шт: термін постачання 21-30 дні (днів) |
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| PE4105C1ES_R1_00001 | PanJit Semiconductor | PE4105C1ES-R1 Protection diodes - arrays |
на замовлення 4200 шт: термін постачання 14-21 дні (днів) |
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| PE4309C2A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Application: automotive industry Mounting: SMD Case: SOT23 Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4312C2A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4312C2A_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT23 Type of diode: TVS Mounting: SMD Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4312C2C-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOT323 Type of diode: TVS Mounting: SMD Case: SOT323 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4312CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD323 Type of diode: TVS Mounting: SMD Case: SOD323 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4312ES_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD523 Type of diode: TVS Mounting: SMD Case: SOD523 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4712L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Application: automotive industry Case: DFN1610-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4712L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; DFN1610-2 Case: DFN1610-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4720L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Application: automotive industry Case: DFN1610-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4720L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Case: DFN1610-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4724L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Application: automotive industry Case: DFN1610-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4724L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Mounting: SMD Type of diode: TVS Case: DFN1610-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4728L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Type of diode: TVS Mounting: SMD Case: DFN1610-2 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4736L1Q-AU_R1_002A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Case: DFN1610-2 Mounting: SMD Type of diode: TVS Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PE4736L1Q_R1_00201 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1610-2 Case: DFN1610-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEC11SD03M1Q_R1_00501 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3V Breakdown voltage: 5.5V Max. forward impulse current: 3.5A Semiconductor structure: bidirectional Case: DFN1006-2 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.19pF Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PEC1605M1Q_R1_00001 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD Capacitance: 0.6pF Mounting: SMD Type of diode: TVS Kind of package: reel; tape Leakage current: 75nA Max. off-state voltage: 5.5V Breakdown voltage: 6.8...11.2V Semiconductor structure: bidirectional Case: DFN1006-2 Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PEC3107M1AQ_R1_00501 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1006-2 Case: DFN1006-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEC3107S1Q_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; DFN0603-2 Case: DFN0603-2 Mounting: SMD Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEC3112M1Q_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; DFN1006-2 Type of diode: TVS Mounting: SMD Case: DFN1006-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEC3205CS_R1_00701 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; SOD323 Type of diode: TVS Mounting: SMD Case: SOD323 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEC3324C2A-AU_R1_000A1 | PanJit Semiconductor |
PEC3324C2A-AU-R1 Protection diodes - arrays |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PEC33712C2A_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23 Version: ESD Kind of package: reel; tape Mounting: SMD Case: SOT23 Type of diode: TVS array Capacitance: 35pF Leakage current: 1µA Number of channels: 2 Max. off-state voltage: 7...12V Breakdown voltage: 7.5...13.3V Max. forward impulse current: 8A Semiconductor structure: asymmetric; bidirectional Application: universal кількість в упаковці: 1 шт |
на замовлення 13 шт: термін постачання 14-21 дні (днів) |
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PEC33712C2A_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23 Version: ESD Kind of package: reel; tape Mounting: SMD Case: SOT23 Type of diode: TVS array Capacitance: 35pF Leakage current: 1µA Number of channels: 2 Max. off-state voltage: 7...12V Breakdown voltage: 7.5...13.3V Max. forward impulse current: 8A Semiconductor structure: asymmetric; bidirectional Application: universal |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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| PJ30072S6_R1_00301 | PanJit Semiconductor |
Category: Voltage regulators - DC/DC circuitsDescription: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC Operating temperature: -40...85°C Type of converter: DC/DC Output current: 0.75A Input voltage: 750mV DC...5.5V DC Case: SOT23-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJ4L40W6_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arraysDescription: Diode: TVS; SOT23-6L Type of diode: TVS Mounting: SMD Case: SOT23-6L |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PJA138K-AU_R1_000A1 | PanJit Semiconductor |
PJA138K-AU-R1 SMD N channel transistors |
на замовлення 2740 шт: термін постачання 14-21 дні (днів) |
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PJA3400_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23 Case: SOT23 Polarisation: unipolar Gate charge: 5.7nC On-state resistance: 60mΩ Power dissipation: 1.25W Drain current: 4.9A Gate-source voltage: ±12V Pulsed drain current: 19.6A Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 2675 шт: термін постачання 14-21 дні (днів) |
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| P6SMBJ7.0CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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В кошику
од. на суму грн.
| P6SMBJ7.5CA_R1_00001 |
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Виробник: PanJit Semiconductor
P6SMBJ7.5CA-R1 Bidirectional TVS SMD diodes
P6SMBJ7.5CA-R1 Bidirectional TVS SMD diodes
на замовлення 430 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.80 грн |
| 135+ | 8.54 грн |
| 369+ | 8.05 грн |
| P6SMBJ75A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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В кошику
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| P6SMBJ78A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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В кошику
од. на суму грн.
| P6SMBJ85CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
В кошику
од. на суму грн.
| P6SMBJ90A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| P6SMBJ90CA_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; bidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
товару немає в наявності
В кошику
од. на суму грн.
| PBHV8050SA_R1_00501 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 500V
Frequency: 50MHz
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Mounting: SMD
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 500V
Frequency: 50MHz
Polarisation: bipolar
Case: SOT23
Type of transistor: NPN
Kind of package: reel; tape
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В кошику
од. на суму грн.
| PBHV8110DA-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 3093 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.42 грн |
| 38+ | 10.84 грн |
| 100+ | 6.35 грн |
| 500+ | 4.53 грн |
| 1000+ | 4.11 грн |
| PBHV8110DA-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
кількість в упаковці: 1 шт
на замовлення 3093 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 20.90 грн |
| 23+ | 13.50 грн |
| 100+ | 7.62 грн |
| 500+ | 5.43 грн |
| 1000+ | 4.93 грн |
| PCDB1065G1_R2_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
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В кошику
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| PCDF0465G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Max. load current: 20A
Max. forward impulse current: 360A
Leakage current: 40µA
Power dissipation: 53.6W
Kind of package: tube
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| PCDF0665G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
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| PCDF0665G3_T0_00601 |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: Ammo Pack
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: Ammo Pack
Max. forward voltage: 1.5V
Power dissipation: 70.8W
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| PCDF0865G1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
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| PCDH2065CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 416.98 грн |
| 5+ | 362.78 грн |
| 30+ | 308.59 грн |
| 150+ | 302.77 грн |
| PCDH2065CCG1_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 347.48 грн |
| 5+ | 291.12 грн |
| 30+ | 257.16 грн |
| PCDH2065CCGB_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
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| PCDH2065CCGC_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
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| PCDP05120G1_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 2V
Load current: 5A
Max. load current: 40A
Power dissipation: 129.3W
Max. forward impulse current: 520A
Max. off-state voltage: 1.2kV
Technology: SiC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220AC; Ufmax: 2V
Case: TO220AC
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 50µA
Max. forward voltage: 2V
Load current: 5A
Max. load current: 40A
Power dissipation: 129.3W
Max. forward impulse current: 520A
Max. off-state voltage: 1.2kV
Technology: SiC
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| PCDP15120G1_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; TO220AC; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2V
Max. load current: 120A
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
Kind of package: tube
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| PDZ5.1B-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
на замовлення 2570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.71 грн |
| 69+ | 5.90 грн |
| 110+ | 3.69 грн |
| 500+ | 2.77 грн |
| 1000+ | 2.49 грн |
| PDZ5.1B-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2570 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 10.45 грн |
| 42+ | 7.36 грн |
| 100+ | 4.43 грн |
| 500+ | 3.33 грн |
| 1000+ | 2.99 грн |
| 5000+ | 2.68 грн |
| PDZ5.1B_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
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В кошику
од. на суму грн.
| PE1605C4A6-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PE1605C4A6_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
товару немає в наявності
В кошику
од. на суму грн.
| PE1605C4A6_S1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
товару немає в наявності
В кошику
од. на суму грн.
| PE1805C4A6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
на замовлення 8480 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.68 грн |
| 28+ | 10.88 грн |
| 100+ | 7.16 грн |
| 250+ | 6.12 грн |
| 500+ | 5.43 грн |
| 1000+ | 5.38 грн |
| PE1805C4A6_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
на замовлення 8480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.06 грн |
| 47+ | 8.73 грн |
| 100+ | 5.97 грн |
| 250+ | 5.10 грн |
| 500+ | 4.53 грн |
| 1000+ | 4.48 грн |
| PE1805C4C6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
кількість в упаковці: 1 шт
на замовлення 2970 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.68 грн |
| 33+ | 9.27 грн |
| 100+ | 6.25 грн |
| 500+ | 5.11 грн |
| 1000+ | 4.76 грн |
| 3000+ | 4.50 грн |
| PE1805C4C6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
на замовлення 2970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.06 грн |
| 55+ | 7.44 грн |
| 100+ | 5.21 грн |
| 500+ | 4.26 грн |
| 1000+ | 3.96 грн |
| PE4105C1ES_R1_00001 |
Виробник: PanJit Semiconductor
PE4105C1ES-R1 Protection diodes - arrays
PE4105C1ES-R1 Protection diodes - arrays
на замовлення 4200 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 54+ | 5.84 грн |
| 674+ | 1.70 грн |
| 1852+ | 1.61 грн |
| PE4309C2A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Application: automotive industry
Mounting: SMD
Case: SOT23
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Application: automotive industry
Mounting: SMD
Case: SOT23
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PE4312C2A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PE4312C2A_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23
Type of diode: TVS
Mounting: SMD
Case: SOT23
товару немає в наявності
В кошику
од. на суму грн.
| PE4312C2C-AU_R1_007A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT323
Type of diode: TVS
Mounting: SMD
Case: SOT323
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; SOT323
Type of diode: TVS
Mounting: SMD
Case: SOT323
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PE4312CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
товару немає в наявності
В кошику
од. на суму грн.
| PE4312ES_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Type of diode: TVS
Mounting: SMD
Case: SOD523
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Type of diode: TVS
Mounting: SMD
Case: SOD523
товару немає в наявності
В кошику
од. на суму грн.
| PE4712L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Application: automotive industry
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PE4712L1Q_R1_00201 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PE4720L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
товару немає в наявності
В кошику
од. на суму грн.
| PE4720L1Q_R1_00201 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
товару немає в наявності
В кошику
од. на суму грн.
| PE4724L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Case: DFN1610-2
товару немає в наявності
В кошику
од. на суму грн.
| PE4724L1Q_R1_00201 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Mounting: SMD
Type of diode: TVS
Case: DFN1610-2
товару немає в наявності
В кошику
од. на суму грн.
| PE4728L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PE4736L1Q-AU_R1_002A1 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PE4736L1Q_R1_00201 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1610-2
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PEC11SD03M1Q_R1_00501 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| PEC1605M1Q_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape; ESD
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Kind of package: reel; tape
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
| PEC3107M1AQ_R1_00501 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PEC3107S1Q_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN0603-2
Case: DFN0603-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN0603-2
Case: DFN0603-2
Mounting: SMD
Type of diode: TVS
товару немає в наявності
В кошику
од. на суму грн.
| PEC3112M1Q_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Type of diode: TVS
Mounting: SMD
Case: DFN1006-2
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Type of diode: TVS
Mounting: SMD
Case: DFN1006-2
товару немає в наявності
В кошику
од. на суму грн.
| PEC3205CS_R1_00701 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
товару немає в наявності
В кошику
од. на суму грн.
| PEC3324C2A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PEC3324C2A-AU-R1 Protection diodes - arrays
PEC3324C2A-AU-R1 Protection diodes - arrays
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.95 грн |
| 133+ | 8.64 грн |
| 364+ | 8.15 грн |
| PEC33712C2A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
кількість в упаковці: 1 шт
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
кількість в упаковці: 1 шт
на замовлення 13 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 23.18 грн |
| 100+ | 7.57 грн |
| 250+ | 6.70 грн |
| 500+ | 6.21 грн |
| PEC33712C2A_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; SOT23
Version: ESD
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Semiconductor structure: asymmetric; bidirectional
Application: universal
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 30.73 грн |
| PJ30072S6_R1_00301 |
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Виробник: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Operating temperature: -40...85°C
Type of converter: DC/DC
Output current: 0.75A
Input voltage: 750mV DC...5.5V DC
Case: SOT23-6
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Operating temperature: -40...85°C
Type of converter: DC/DC
Output current: 0.75A
Input voltage: 750mV DC...5.5V DC
Case: SOT23-6
товару немає в наявності
В кошику
од. на суму грн.
| PJ4L40W6_R1_00001 |
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Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
товару немає в наявності
В кошику
од. на суму грн.
| PJA138K-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA138K-AU-R1 SMD N channel transistors
PJA138K-AU-R1 SMD N channel transistors
на замовлення 2740 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.86 грн |
| 490+ | 2.34 грн |
| 1345+ | 2.21 грн |
| PJA3400_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Case: SOT23
Polarisation: unipolar
Gate charge: 5.7nC
On-state resistance: 60mΩ
Power dissipation: 1.25W
Drain current: 4.9A
Gate-source voltage: ±12V
Pulsed drain current: 19.6A
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 2675 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.49 грн |
| 15+ | 20.96 грн |
| 100+ | 12.81 грн |
| 500+ | 9.39 грн |
| 1000+ | 8.21 грн |
| 3000+ | 6.66 грн |
| 6000+ | 5.89 грн |







