Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1490) > Сторінка 17 з 25
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PJD70P03E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
| PJD75P04E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| PJD75P04E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
| PJD90P03E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| PJD90P03E-AU_L2_006A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
| PJDLC05_R1_00001 | PanJit Semiconductor | PJDLC05-R1 Transil diodes - arrays |
товар відсутній |
||||||||||||||
 |
PJE138K_R1_00001 | PanJit Semiconductor |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Gate charge: 1nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 50V Drain current: 0.35A On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 223mW Polarisation: unipolar кількість в упаковці: 5 шт |
на замовлення 3850 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||
|
|
PJE138K_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Gate charge: 1nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 50V Drain current: 0.35A On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 223mW Polarisation: unipolar |
на замовлення 3850 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
PJE5V0U8TB-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.8÷10.2V; SOT523; Features: ESD protection Type of diode: TVS array Breakdown voltage: 5.8...10.2V Mounting: SMD Case: SOT523 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.8pF Application: automotive industry |
на замовлення 20000 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
PJE5V0U8TB-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.8÷10.2V; SOT523; Features: ESD protection Type of diode: TVS array Breakdown voltage: 5.8...10.2V Mounting: SMD Case: SOT523 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Leakage current: 1µA Kind of package: reel; tape Capacitance: 0.8pF Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 20000 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||
| PJE8402_R1_00001 | PanJit Semiconductor |
PJE8402-R1 SMD N channel transistors |
товар відсутній |
||||||||||||||
|
|
PJE8403_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW Kind of package: reel; tape Drain-source voltage: -20V Drain current: -0.6A On-state resistance: 0.6Ω Type of transistor: P-MOSFET Power dissipation: 0.3W Polarisation: unipolar Gate charge: 2.2nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -2.4A Mounting: SMD Case: SOT523 кількість в упаковці: 5 шт |
на замовлення 3995 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||
|
|
PJE8403_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW Kind of package: reel; tape Drain-source voltage: -20V Drain current: -0.6A On-state resistance: 0.6Ω Type of transistor: P-MOSFET Power dissipation: 0.3W Polarisation: unipolar Gate charge: 2.2nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -2.4A Mounting: SMD Case: SOT523 |
на замовлення 3995 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
PJE8408_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523 Mounting: SMD Drain-source voltage: 20V Drain current: 0.5A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 1A Case: SOT523 кількість в упаковці: 5 шт |
на замовлення 3980 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||
|
|
PJE8408_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523 Mounting: SMD Drain-source voltage: 20V Drain current: 0.5A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 1A Case: SOT523 |
на замовлення 3980 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
 |
PJEC2415VM1WS-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 17.1÷30.3V; 160W; asymmetric,bidirectional Mounting: SMD Application: automotive industry Max. off-state voltage: 15...24V Semiconductor structure: asymmetric; bidirectional Breakdown voltage: 17.1...30.3V Leakage current: 50nA Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 160W Case: SOD323 Capacitance: 17pF |
товар відсутній |
|||||||||||||
|
|
PJEC2415VM1WS-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 17.1÷30.3V; 160W; asymmetric,bidirectional Mounting: SMD Application: automotive industry Max. off-state voltage: 15...24V Semiconductor structure: asymmetric; bidirectional Breakdown voltage: 17.1...30.3V Leakage current: 50nA Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 160W Case: SOD323 Capacitance: 17pF кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
| PJGBLC03C-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; SOD323; reel,tape Mounting: SMD Case: SOD323 Capacitance: 3pF Application: automotive industry Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Breakdown voltage: 4.75...5.25V Leakage current: 20µA Max. off-state voltage: 3.3V |
товар відсутній |
||||||||||||||
| PJGBLC03C-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; SOD323; reel,tape Mounting: SMD Case: SOD323 Capacitance: 3pF Application: automotive industry Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Breakdown voltage: 4.75...5.25V Leakage current: 20µA Max. off-state voltage: 3.3V кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
| PJGBLC03C_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323 Case: SOD323 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Peak pulse power dissipation: 350W Capacitance: 3pF Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Max. forward impulse current: 1A Breakdown voltage: 4.75...5.25V Leakage current: 20µA кількість в упаковці: 5 шт |
на замовлення 4205 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
| PJGBLC03C_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323 Case: SOD323 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Peak pulse power dissipation: 350W Capacitance: 3pF Max. off-state voltage: 3.3V Semiconductor structure: bidirectional Max. forward impulse current: 1A Breakdown voltage: 4.75...5.25V Leakage current: 20µA |
на замовлення 4205 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||
| PJGBLC05C_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323 Case: SOD323 Mounting: SMD Kind of package: reel; tape Capacitance: 3pF Max. off-state voltage: 5V Semiconductor structure: bidirectional Max. forward impulse current: 1A Breakdown voltage: 7.03...7.77V Leakage current: 5µA Type of diode: TVS array Peak pulse power dissipation: 0.35kW кількість в упаковці: 5 шт |
на замовлення 5000 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
| PJGBLC05C_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323 Case: SOD323 Mounting: SMD Kind of package: reel; tape Capacitance: 3pF Max. off-state voltage: 5V Semiconductor structure: bidirectional Max. forward impulse current: 1A Breakdown voltage: 7.03...7.77V Leakage current: 5µA Type of diode: TVS array Peak pulse power dissipation: 0.35kW |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||
| PJGBLC08C-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; SOD323; reel,tape Type of diode: TVS array Case: SOD323 Mounting: SMD Kind of package: reel; tape |
товар відсутній |
||||||||||||||
| PJGBLC08C-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; SOD323; reel,tape Type of diode: TVS array Case: SOD323 Mounting: SMD Kind of package: reel; tape кількість в упаковці: 5 шт |
товар відсутній |
||||||||||||||
|
|
PJGBLC12C_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323 Type of diode: TVS array Breakdown voltage: 13.97...15.44V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 12V Leakage current: 1µA Kind of package: reel; tape Capacitance: 3pF кількість в упаковці: 5 шт |
на замовлення 4860 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||
|
|
PJGBLC12C_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323 Type of diode: TVS array Breakdown voltage: 13.97...15.44V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 12V Leakage current: 1µA Kind of package: reel; tape Capacitance: 3pF |
на замовлення 4860 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
PJGBLC24C_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 27.27÷30.14V; 1A; 350W; bidirectional; SOD323 Type of diode: TVS array Breakdown voltage: 27.27...30.14V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 24V Leakage current: 1µA Kind of package: reel; tape Capacitance: 3pF кількість в упаковці: 5 шт |
на замовлення 4495 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||
|
|
PJGBLC24C_R1_00001 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 27.27÷30.14V; 1A; 350W; bidirectional; SOD323 Type of diode: TVS array Breakdown voltage: 27.27...30.14V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 24V Leakage current: 1µA Kind of package: reel; tape Capacitance: 3pF |
на замовлення 4495 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| PJL9407_R2_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2.1W; SOP8 Mounting: SMD Pulsed drain current: -20A Power dissipation: 2.1W Gate charge: 4.8nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 On-state resistance: 80mΩ кількість в упаковці: 5 шт |
на замовлення 2500 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||
| PJL9407_R2_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2.1W; SOP8 Mounting: SMD Pulsed drain current: -20A Power dissipation: 2.1W Gate charge: 4.8nC Polarisation: unipolar Drain current: -5A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 On-state resistance: 80mΩ |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||
 |
PJL9850_R2_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.4A Pulsed drain current: 20A Power dissipation: 1.7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2292 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||
|
|
PJL9850_R2_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.4A Pulsed drain current: 20A Power dissipation: 1.7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2292 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
| PJMB210N65EC_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
| PJMB210N65EC_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 42A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
| PJMB390N65EC_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Case: TO263 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
| PJMB390N65EC_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
| PJMB390N65EC_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Case: TO263 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A |
товар відсутній |
||||||||||||||
| PJMB390N65EC_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263 Case: TO263 Mounting: SMD Kind of package: tube Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A |
товар відсутній |
||||||||||||||
| PJMBZ12A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ12A-AU-R1 Transil diodes - arrays |
товар відсутній |
||||||||||||||
| PJMBZ15A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ15A-AU-R1 Transil diodes - arrays |
товар відсутній |
||||||||||||||
| PJMBZ18A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ18A-AU-R1 Transil diodes - arrays |
товар відсутній |
||||||||||||||
| PJMBZ27A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ27A-AU-R1 Transil diodes - arrays |
товар відсутній |
||||||||||||||
| PJMBZ27V-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; SOT23; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array |
товар відсутній |
||||||||||||||
| PJMBZ27V-AU_R1_000A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; SOT23; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array кількість в упаковці: 5 шт |
товар відсутній |
||||||||||||||
| PJMBZ27V-AU_R2_000A1 | PanJit Semiconductor | PJMBZ27V-AU-R2 Transil diodes - arrays |
товар відсутній |
||||||||||||||
| PJMBZ33A-AU_R1_007A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23 Application: automotive industry Breakdown voltage: 31.35...34.65V Leakage current: 50nA Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Max. off-state voltage: 26V Semiconductor structure: common anode; double |
товар відсутній |
||||||||||||||
| PJMBZ33A-AU_R1_007A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23 Application: automotive industry Breakdown voltage: 31.35...34.65V Leakage current: 50nA Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Max. off-state voltage: 26V Semiconductor structure: common anode; double кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
| PJMBZ5V6A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ5V6A-AU-R1 Transil diodes - arrays |
товар відсутній |
||||||||||||||
| PJMBZ6V2A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ6V2A-AU-R1 Transil diodes - arrays |
товар відсутній |
||||||||||||||
| PJMBZ6V8A-AU_R1_007A1 | PanJit Semiconductor | PJMBZ6V8A-AU-R1 Transil diodes - arrays |
товар відсутній |
||||||||||||||
| PJMBZ9V1A-AU_R1_007A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23 Mounting: SMD Case: SOT23 Features of semiconductor devices: ESD protection Peak pulse power dissipation: 24W Max. off-state voltage: 6V Semiconductor structure: common anode; double Breakdown voltage: 8.65...9.56V Leakage current: 0.3µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS array |
товар відсутній |
||||||||||||||
| PJMBZ9V1A-AU_R1_007A1 | PanJit Semiconductor |
Category: Transil diodes - arrays Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23 Mounting: SMD Case: SOT23 Features of semiconductor devices: ESD protection Peak pulse power dissipation: 24W Max. off-state voltage: 6V Semiconductor structure: common anode; double Breakdown voltage: 8.65...9.56V Leakage current: 0.3µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS array кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
| PJMD280N60E1_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
| PJMD280N60E1_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Case: TO252AA Mounting: SMD Kind of package: tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||
 |
PJMD360N60EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
PJMD360N60EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
|||||||||||||
|
|
PJMD390N65EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A кількість в упаковці: 1 шт |
товар відсутній |
|||||||||||||
|
|
PJMD390N65EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A |
товар відсутній |
|||||||||||||
|
|
PJMD580N60E1_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 54W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
| PJD70P03E-AU_L2_006A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PJD75P04E-AU_L2_006A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| PJD75P04E-AU_L2_006A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PJD90P03E-AU_L2_006A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| PJD90P03E-AU_L2_006A1 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PJE138K_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.35A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 223mW
Polarisation: unipolar
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.35A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 223mW
Polarisation: unipolar
кількість в упаковці: 5 шт
на замовлення 3850 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.34 грн |
| 50+ | 5.55 грн |
| 225+ | 4.41 грн |
| 620+ | 4.16 грн |
| 4000+ | 4 грн |
| PJE138K_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.35A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 223mW
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.35A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 223mW
Polarisation: unipolar
на замовлення 3850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.28 грн |
| 80+ | 4.45 грн |
| 225+ | 3.68 грн |
| 620+ | 3.47 грн |
| PJE5V0U8TB-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Application: automotive industry
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Application: automotive industry
на замовлення 20000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.1 грн |
| 17+ | 21.97 грн |
| 25+ | 16.93 грн |
| 100+ | 13.51 грн |
| 164+ | 5.12 грн |
| 450+ | 4.84 грн |
| PJE5V0U8TB-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Application: automotive industry
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; SOT523; Features: ESD protection
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.8pF
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 20000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 34.92 грн |
| 10+ | 27.38 грн |
| 25+ | 20.31 грн |
| 100+ | 16.21 грн |
| 164+ | 6.14 грн |
| 450+ | 5.8 грн |
| PJE8403_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.6A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.4A
Mounting: SMD
Case: SOT523
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.6A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.4A
Mounting: SMD
Case: SOT523
кількість в упаковці: 5 шт
на замовлення 3995 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.87 грн |
| 35+ | 8.15 грн |
| 100+ | 7.08 грн |
| 170+ | 5.8 грн |
| 470+ | 5.55 грн |
| 4000+ | 5.29 грн |
| PJE8403_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.6A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.4A
Mounting: SMD
Case: SOT523
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -0.6A
On-state resistance: 0.6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.2nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.4A
Mounting: SMD
Case: SOT523
на замовлення 3995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.72 грн |
| 55+ | 6.54 грн |
| 100+ | 5.9 грн |
| 170+ | 4.84 грн |
| 470+ | 4.62 грн |
| PJE8408_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1A
Case: SOT523
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1A
Case: SOT523
кількість в упаковці: 5 шт
на замовлення 3980 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.87 грн |
| 35+ | 8.15 грн |
| 100+ | 7.08 грн |
| 170+ | 5.8 грн |
| 470+ | 5.46 грн |
| 4000+ | 5.29 грн |
| PJE8408_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1A
Case: SOT523
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Mounting: SMD
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1A
Case: SOT523
на замовлення 3980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.72 грн |
| 55+ | 6.54 грн |
| 100+ | 5.9 грн |
| 170+ | 4.84 грн |
| 470+ | 4.55 грн |
| PJEC2415VM1WS-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 17.1÷30.3V; 160W; asymmetric,bidirectional
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Breakdown voltage: 17.1...30.3V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 160W
Case: SOD323
Capacitance: 17pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 17.1÷30.3V; 160W; asymmetric,bidirectional
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Breakdown voltage: 17.1...30.3V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 160W
Case: SOD323
Capacitance: 17pF
товар відсутній
| PJEC2415VM1WS-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 17.1÷30.3V; 160W; asymmetric,bidirectional
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Breakdown voltage: 17.1...30.3V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 160W
Case: SOD323
Capacitance: 17pF
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 17.1÷30.3V; 160W; asymmetric,bidirectional
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Breakdown voltage: 17.1...30.3V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 160W
Case: SOD323
Capacitance: 17pF
кількість в упаковці: 1 шт
товар відсутній
| PJGBLC03C-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; SOD323; reel,tape
Mounting: SMD
Case: SOD323
Capacitance: 3pF
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Breakdown voltage: 4.75...5.25V
Leakage current: 20µA
Max. off-state voltage: 3.3V
Category: Transil diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; SOD323; reel,tape
Mounting: SMD
Case: SOD323
Capacitance: 3pF
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Breakdown voltage: 4.75...5.25V
Leakage current: 20µA
Max. off-state voltage: 3.3V
товар відсутній
| PJGBLC03C-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; SOD323; reel,tape
Mounting: SMD
Case: SOD323
Capacitance: 3pF
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Breakdown voltage: 4.75...5.25V
Leakage current: 20µA
Max. off-state voltage: 3.3V
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; SOD323; reel,tape
Mounting: SMD
Case: SOD323
Capacitance: 3pF
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Breakdown voltage: 4.75...5.25V
Leakage current: 20µA
Max. off-state voltage: 3.3V
кількість в упаковці: 1 шт
товар відсутній
| PJGBLC03C_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 350W
Capacitance: 3pF
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 1A
Breakdown voltage: 4.75...5.25V
Leakage current: 20µA
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 350W
Capacitance: 3pF
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 1A
Breakdown voltage: 4.75...5.25V
Leakage current: 20µA
кількість в упаковці: 5 шт
на замовлення 4205 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 13.33 грн |
| 30+ | 10.37 грн |
| 100+ | 8.96 грн |
| 145+ | 7 грн |
| 390+ | 6.66 грн |
| 10000+ | 6.4 грн |
| PJGBLC03C_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 350W
Capacitance: 3pF
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 1A
Breakdown voltage: 4.75...5.25V
Leakage current: 20µA
Category: Transil diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Peak pulse power dissipation: 350W
Capacitance: 3pF
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 1A
Breakdown voltage: 4.75...5.25V
Leakage current: 20µA
на замовлення 4205 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.1 грн |
| 45+ | 8.32 грн |
| 100+ | 7.47 грн |
| 145+ | 5.83 грн |
| 390+ | 5.55 грн |
| PJGBLC05C_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Capacitance: 3pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 1A
Breakdown voltage: 7.03...7.77V
Leakage current: 5µA
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Capacitance: 3pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 1A
Breakdown voltage: 7.03...7.77V
Leakage current: 5µA
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
кількість в упаковці: 5 шт
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.68 грн |
| 30+ | 9.84 грн |
| 100+ | 8.53 грн |
| 145+ | 7 грн |
| 390+ | 6.66 грн |
| 5000+ | 6.32 грн |
| PJGBLC05C_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Capacitance: 3pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 1A
Breakdown voltage: 7.03...7.77V
Leakage current: 5µA
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Capacitance: 3pF
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Max. forward impulse current: 1A
Breakdown voltage: 7.03...7.77V
Leakage current: 5µA
Type of diode: TVS array
Peak pulse power dissipation: 0.35kW
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.57 грн |
| 50+ | 7.89 грн |
| 100+ | 7.11 грн |
| 145+ | 5.83 грн |
| 390+ | 5.55 грн |
| 5000+ | 5.26 грн |
| PJGBLC08C-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; SOD323; reel,tape
Type of diode: TVS array
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; SOD323; reel,tape
Type of diode: TVS array
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
товар відсутній
| PJGBLC08C-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; SOD323; reel,tape
Type of diode: TVS array
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; SOD323; reel,tape
Type of diode: TVS array
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
кількість в упаковці: 5 шт
товар відсутній
| PJGBLC12C_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
кількість в упаковці: 5 шт
на замовлення 4860 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.68 грн |
| 30+ | 9.84 грн |
| 100+ | 8.53 грн |
| 145+ | 7 грн |
| 390+ | 6.66 грн |
| 5000+ | 6.32 грн |
| PJGBLC12C_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 13.97÷15.44V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 13.97...15.44V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
на замовлення 4860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.57 грн |
| 50+ | 7.89 грн |
| 100+ | 7.11 грн |
| 145+ | 5.83 грн |
| 390+ | 5.55 грн |
| PJGBLC24C_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 27.27÷30.14V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 27.27...30.14V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 27.27÷30.14V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 27.27...30.14V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
кількість в упаковці: 5 шт
на замовлення 4495 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.68 грн |
| 30+ | 9.84 грн |
| 100+ | 8.53 грн |
| 145+ | 7.08 грн |
| 390+ | 6.74 грн |
| 5000+ | 6.4 грн |
| PJGBLC24C_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 27.27÷30.14V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 27.27...30.14V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 27.27÷30.14V; 1A; 350W; bidirectional; SOD323
Type of diode: TVS array
Breakdown voltage: 27.27...30.14V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 24V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 3pF
на замовлення 4495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.57 грн |
| 50+ | 7.89 грн |
| 100+ | 7.11 грн |
| 145+ | 5.9 грн |
| 390+ | 5.62 грн |
| PJL9407_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2.1W; SOP8
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 2.1W
Gate charge: 4.8nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 80mΩ
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2.1W; SOP8
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 2.1W
Gate charge: 4.8nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 80mΩ
кількість в упаковці: 5 шт
на замовлення 2500 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.41 грн |
| 100+ | 10.5 грн |
| 115+ | 8.79 грн |
| 310+ | 8.36 грн |
| 10000+ | 8.19 грн |
| PJL9407_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2.1W; SOP8
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 2.1W
Gate charge: 4.8nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 80mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2.1W; SOP8
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 2.1W
Gate charge: 4.8nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 80mΩ
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.33 грн |
| 40+ | 9.96 грн |
| 100+ | 8.75 грн |
| 115+ | 7.32 грн |
| 310+ | 6.97 грн |
| PJL9850_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2292 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.49 грн |
| 15+ | 18.96 грн |
| 25+ | 16.47 грн |
| 73+ | 13.65 грн |
| 200+ | 12.97 грн |
| 2500+ | 12.46 грн |
| PJL9850_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.4A; Idm: 20A; 1.7W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 5.4A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2292 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 52.08 грн |
| 24+ | 15.22 грн |
| 26+ | 13.73 грн |
| 73+ | 11.38 грн |
| 200+ | 10.81 грн |
| PJMB210N65EC_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PJMB210N65EC_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PJMB390N65EC_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
кількість в упаковці: 1 шт
товар відсутній
| PJMB390N65EC_T0_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
кількість в упаковці: 1 шт
товар відсутній
| PJMB390N65EC_R2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
товар відсутній
| PJMB390N65EC_T0_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
товар відсутній
| PJMBZ12A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
PJMBZ12A-AU-R1 Transil diodes - arrays
PJMBZ12A-AU-R1 Transil diodes - arrays
товар відсутній
| PJMBZ15A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
PJMBZ15A-AU-R1 Transil diodes - arrays
PJMBZ15A-AU-R1 Transil diodes - arrays
товар відсутній
| PJMBZ18A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
PJMBZ18A-AU-R1 Transil diodes - arrays
PJMBZ18A-AU-R1 Transil diodes - arrays
товар відсутній
| PJMBZ27A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
PJMBZ27A-AU-R1 Transil diodes - arrays
PJMBZ27A-AU-R1 Transil diodes - arrays
товар відсутній
| PJMBZ27V-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
товар відсутній
| PJMBZ27V-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
кількість в упаковці: 5 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
кількість в упаковці: 5 шт
товар відсутній
| PJMBZ27V-AU_R2_000A1 |
Виробник: PanJit Semiconductor
PJMBZ27V-AU-R2 Transil diodes - arrays
PJMBZ27V-AU-R2 Transil diodes - arrays
товар відсутній
| PJMBZ33A-AU_R1_007A1 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Application: automotive industry
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
Category: Transil diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Application: automotive industry
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
товар відсутній
| PJMBZ33A-AU_R1_007A1 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Application: automotive industry
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Application: automotive industry
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
кількість в упаковці: 1 шт
товар відсутній
| PJMBZ5V6A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
PJMBZ5V6A-AU-R1 Transil diodes - arrays
PJMBZ5V6A-AU-R1 Transil diodes - arrays
товар відсутній
| PJMBZ6V2A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
PJMBZ6V2A-AU-R1 Transil diodes - arrays
PJMBZ6V2A-AU-R1 Transil diodes - arrays
товар відсутній
| PJMBZ6V8A-AU_R1_007A1 |
Виробник: PanJit Semiconductor
PJMBZ6V8A-AU-R1 Transil diodes - arrays
PJMBZ6V8A-AU-R1 Transil diodes - arrays
товар відсутній
| PJMBZ9V1A-AU_R1_007A1 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Mounting: SMD
Case: SOT23
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 24W
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Mounting: SMD
Case: SOT23
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 24W
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
товар відсутній
| PJMBZ9V1A-AU_R1_007A1 |
|
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Mounting: SMD
Case: SOT23
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 24W
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
кількість в упаковці: 1 шт
Category: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Mounting: SMD
Case: SOT23
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 24W
Max. off-state voltage: 6V
Semiconductor structure: common anode; double
Breakdown voltage: 8.65...9.56V
Leakage current: 0.3µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS array
кількість в упаковці: 1 шт
товар відсутній
| PJMD280N60E1_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PJMD280N60E1_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
товар відсутній
| PJMD360N60EC_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| PJMD360N60EC_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| PJMD390N65EC_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
кількість в упаковці: 1 шт
товар відсутній
| PJMD390N65EC_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
товар відсутній
| PJMD580N60E1_L2_00001 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній