Результат пошуку "A.PT20" : > 120
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT200GN60JDQ4 | Microchip Technology |
 Trans IGBT Module N-CH 600V 283A 682000mW |
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| APT200GT60JR | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 100A; SOT227B Technology: NPT; Thunderblot IGBT® Collector current: 100A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 600A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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APT2012CGCK | Kingbright Corporation |
LED Low-Power Uni-Color Green 574nm 2.1V 2-Pin Chip LED T/R |
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APT2012F3C | Kingbright Corporation |
Infrared Emitter 940nm 3mW/sr Rectangular Top Mount 2-Pin SMT T/R |
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APT2012F3C | Kingbright Corporation |
Infrared Emitter 940nm 3mW/sr Rectangular Top Mount 2-Pin SMT T/R |
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APT2012F3C | Kingbright Corporation |
Infrared Emitter 940nm 3mW/sr Rectangular Top Mount 2-Pin SMT T/R |
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APT2012LSECK/J3-PRV | Kingbright Corporation |
LED Uni-Color Hyper Red 640nm 2-Pin SMD T/R |
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APT2012LSECK/J4-PRV | Kingbright Corporation |
LED Uni-Color SB. Orange 611nm 2-Pin Chip LED T/R |
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APT2012LSYCK/J3-PRV | Kingbright Corporation |
LED Uni-Color Yellow 590nm 2-Pin SMD T/R |
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APT2012LVBC/D | Kingbright Corporation |
LED Uni-Color Blue 465nm 2-Pin Chip LED T/R |
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APT2012MGC | Kingbright Corporation |
LED Low-Power Uni-Color Mega Green 574nm 2.1V 2-Pin Chip LED T/R |
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APT2012P3BT | Kingbright Corporation |
Phototransistor IR Chip Silicon 940nm 2-Pin SMT T/R |
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APT2012QBC/D | Kingbright Corporation |
LED Low-Power Uni-Color Blue 460nm 3.3V 2-Pin Chip LED T/R |
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APT2012SECK/J3-PRV | Kingbright Corporation |
LED Uni-Color Hyper Red 640nm 2-Pin Chip LED T/R |
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APT2012SECK/J4-PRV | Kingbright Corporation |
LED Uni-Color SB. Orange 611nm 2-Pin Chip LED T/R |
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APT2012SGC | Kingbright Corporation |
LED Low-Power Uni-Color SB. Green 565nm 2.2V 2-Pin Chip LED T/R |
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APT2012SURCK | Kingbright Corporation |
LED Low-Power Uni-Color Hyper Red 645nm 2.2V 2-Pin Chip LED T/R |
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APT2012SYCK | Kingbright Corporation |
LED Low-Power Uni-Color SB. Yellow 590nm 2V 2-Pin Chip LED T/R |
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APT2012SYCK | Kingbright Corporation |
LED Low-Power Uni-Color SB. Yellow 590nm 2V 2-Pin Chip LED T/R |
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APT2012SYCK/J3-PRV | Kingbright Corporation |
LED Uni-Color SB. Yellow 590nm 2-Pin Chip LED T/R |
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APT2012YC | Kingbright Corporation |
LED Uni-Color Yellow 590nm 2-Pin Chip LED T/R |
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APT2012YC | Kingbright Corporation |
LED Uni-Color Yellow 590nm 2-Pin Chip LED T/R |
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APT20GN60BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
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APT20GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
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APT20GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns |
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APT20GN60BG | Microchip Technology |
Trans IGBT Chip N-CH 600V 40A 136W 3-Pin(3+Tab) TO-247 Tube |
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APT20GN60SDQ2G | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: SMD Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Features of semiconductor devices: integrated anti-parallel diode |
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| APT20M11JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 176A Pulsed drain current: 704A Power dissipation: 694W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 11mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT20M11JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 176A Pulsed drain current: 704A Power dissipation: 694W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 11mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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APT20M11JLL | Microchip Technology |
Trans MOSFET N-CH 200V 176A 4-Pin SOT-227 Tube |
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| APT20M11JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 175A Pulsed drain current: 700A Power dissipation: 700W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 11mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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APT20M11JVFR | Microchip Technology |
Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 Tube |
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APT20M11JVR | Microchip Technology |
Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 Tube |
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| APT20M120JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 200V Drain current: 15A Pulsed drain current: 104A Power dissipation: 543W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 672mΩ Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT20M120JCU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 200V Drain current: 15A Pulsed drain current: 104A Power dissipation: 543W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 672mΩ Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT20M16B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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| APT20M16B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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APT20M16LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO264 Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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APT20M16LFLLG | Microchip Technology |
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube |
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APT20M16LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 694W Case: TO264 Gate-source voltage: ±30V On-state resistance: 16mΩ Mounting: THT Gate charge: 0.14µC Kind of channel: enhanced |
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APT20M16LLLG | Microchip Technology |
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube |
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| APT20M18B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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APT20M18B2VFRG | Microchip Technology |
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube |
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APT20M18B2VFRG | Microchip Technology |
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube |
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| APT20M18B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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APT20M18LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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APT20M18LVFRG | Microchip Technology |
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube |
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APT20M18LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 625W Case: TO264 Gate-source voltage: ±30V On-state resistance: 18mΩ Mounting: THT Gate charge: 330nC Kind of channel: enhanced |
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APT20M18LVRG | Microchip Technology |
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube |
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| APT20M20B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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APT20M20B2FLLG | Microchip Technology |
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube |
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| APT20M20B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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| APT20M20JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 104A Pulsed drain current: 416A Power dissipation: 463W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT20M20JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 104A Pulsed drain current: 416A Power dissipation: 463W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 20mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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APT20M20LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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APT20M20LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 400A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 20mΩ Mounting: THT Gate charge: 110nC Kind of channel: enhanced |
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| APT20M22JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 97A Pulsed drain current: 388A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 22mΩ Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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APT20M22JVR | Microchip Technology |
Trans MOSFET N-CH 200V 97A 4-Pin SOT-227 Tube |
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| APT20M22JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 200V Drain current: 72A Pulsed drain current: 388A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 22mΩ Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
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APT20M22JVRU2 | Microchip Technology |
Trans MOSFET N-CH 200V 97A 4-Pin SOT-227 Tube |
товар відсутній |
| APT200GN60JDQ4 |
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Виробник: Microchip Technology
Trans IGBT Module N-CH 600V 283A 682000mW
Trans IGBT Module N-CH 600V 283A 682000mW
товар відсутній
| APT200GT60JR |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 100A; SOT227B
Technology: NPT; Thunderblot IGBT®
Collector current: 100A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 100A; SOT227B
Technology: NPT; Thunderblot IGBT®
Collector current: 100A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 600A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
| APT2012CGCK |
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Виробник: Kingbright Corporation
LED Low-Power Uni-Color Green 574nm 2.1V 2-Pin Chip LED T/R
LED Low-Power Uni-Color Green 574nm 2.1V 2-Pin Chip LED T/R
товар відсутній
| APT2012F3C |
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Виробник: Kingbright Corporation
Infrared Emitter 940nm 3mW/sr Rectangular Top Mount 2-Pin SMT T/R
Infrared Emitter 940nm 3mW/sr Rectangular Top Mount 2-Pin SMT T/R
товар відсутній
| APT2012F3C |
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Виробник: Kingbright Corporation
Infrared Emitter 940nm 3mW/sr Rectangular Top Mount 2-Pin SMT T/R
Infrared Emitter 940nm 3mW/sr Rectangular Top Mount 2-Pin SMT T/R
товар відсутній
| APT2012F3C |
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Виробник: Kingbright Corporation
Infrared Emitter 940nm 3mW/sr Rectangular Top Mount 2-Pin SMT T/R
Infrared Emitter 940nm 3mW/sr Rectangular Top Mount 2-Pin SMT T/R
товар відсутній
| APT2012LSECK/J3-PRV |
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Виробник: Kingbright Corporation
LED Uni-Color Hyper Red 640nm 2-Pin SMD T/R
LED Uni-Color Hyper Red 640nm 2-Pin SMD T/R
товар відсутній
| APT2012LSECK/J4-PRV |
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Виробник: Kingbright Corporation
LED Uni-Color SB. Orange 611nm 2-Pin Chip LED T/R
LED Uni-Color SB. Orange 611nm 2-Pin Chip LED T/R
товар відсутній
| APT2012LSYCK/J3-PRV |
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Виробник: Kingbright Corporation
LED Uni-Color Yellow 590nm 2-Pin SMD T/R
LED Uni-Color Yellow 590nm 2-Pin SMD T/R
товар відсутній
| APT2012LVBC/D |
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Виробник: Kingbright Corporation
LED Uni-Color Blue 465nm 2-Pin Chip LED T/R
LED Uni-Color Blue 465nm 2-Pin Chip LED T/R
товар відсутній
| APT2012MGC |
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Виробник: Kingbright Corporation
LED Low-Power Uni-Color Mega Green 574nm 2.1V 2-Pin Chip LED T/R
LED Low-Power Uni-Color Mega Green 574nm 2.1V 2-Pin Chip LED T/R
товар відсутній
| APT2012P3BT |
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Виробник: Kingbright Corporation
Phototransistor IR Chip Silicon 940nm 2-Pin SMT T/R
Phototransistor IR Chip Silicon 940nm 2-Pin SMT T/R
товар відсутній
| APT2012QBC/D |
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Виробник: Kingbright Corporation
LED Low-Power Uni-Color Blue 460nm 3.3V 2-Pin Chip LED T/R
LED Low-Power Uni-Color Blue 460nm 3.3V 2-Pin Chip LED T/R
товар відсутній
| APT2012SECK/J3-PRV |
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Виробник: Kingbright Corporation
LED Uni-Color Hyper Red 640nm 2-Pin Chip LED T/R
LED Uni-Color Hyper Red 640nm 2-Pin Chip LED T/R
товар відсутній
| APT2012SECK/J4-PRV |
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Виробник: Kingbright Corporation
LED Uni-Color SB. Orange 611nm 2-Pin Chip LED T/R
LED Uni-Color SB. Orange 611nm 2-Pin Chip LED T/R
товар відсутній
| APT2012SGC |
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Виробник: Kingbright Corporation
LED Low-Power Uni-Color SB. Green 565nm 2.2V 2-Pin Chip LED T/R
LED Low-Power Uni-Color SB. Green 565nm 2.2V 2-Pin Chip LED T/R
товар відсутній
| APT2012SURCK |
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Виробник: Kingbright Corporation
LED Low-Power Uni-Color Hyper Red 645nm 2.2V 2-Pin Chip LED T/R
LED Low-Power Uni-Color Hyper Red 645nm 2.2V 2-Pin Chip LED T/R
товар відсутній
| APT2012SYCK |
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Виробник: Kingbright Corporation
LED Low-Power Uni-Color SB. Yellow 590nm 2V 2-Pin Chip LED T/R
LED Low-Power Uni-Color SB. Yellow 590nm 2V 2-Pin Chip LED T/R
товар відсутній
| APT2012SYCK |
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Виробник: Kingbright Corporation
LED Low-Power Uni-Color SB. Yellow 590nm 2V 2-Pin Chip LED T/R
LED Low-Power Uni-Color SB. Yellow 590nm 2V 2-Pin Chip LED T/R
товар відсутній
| APT2012SYCK/J3-PRV |
|
Виробник: Kingbright Corporation
LED Uni-Color SB. Yellow 590nm 2-Pin Chip LED T/R
LED Uni-Color SB. Yellow 590nm 2-Pin Chip LED T/R
товар відсутній
| APT2012YC |
|
Виробник: Kingbright Corporation
LED Uni-Color Yellow 590nm 2-Pin Chip LED T/R
LED Uni-Color Yellow 590nm 2-Pin Chip LED T/R
товар відсутній
| APT2012YC |
|
Виробник: Kingbright Corporation
LED Uni-Color Yellow 590nm 2-Pin Chip LED T/R
LED Uni-Color Yellow 590nm 2-Pin Chip LED T/R
товар відсутній
| APT20GN60BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| APT20GN60BDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| APT20GN60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
товар відсутній
| APT20GN60BG |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 600V 40A 136W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 40A 136W 3-Pin(3+Tab) TO-247 Tube
товар відсутній
| APT20GN60SDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| APT20M11JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 176A
Pulsed drain current: 704A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 176A
Pulsed drain current: 704A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT20M11JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 176A
Pulsed drain current: 704A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 176A; ISOTOP; screw; Idm: 704A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 176A
Pulsed drain current: 704A
Power dissipation: 694W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT20M11JLL |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 176A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 200V 176A 4-Pin SOT-227 Tube
товар відсутній
| APT20M11JVFR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 175A
Pulsed drain current: 700A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 175A; ISOTOP; screw; Idm: 700A
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 175A
Pulsed drain current: 700A
Power dissipation: 700W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 11mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT20M11JVFR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 Tube
товар відсутній
| APT20M11JVR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 Tube
товар відсутній
| APT20M120JCU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 15A
Pulsed drain current: 104A
Power dissipation: 543W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 672mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 15A
Pulsed drain current: 104A
Power dissipation: 543W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 672mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT20M120JCU3 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 15A
Pulsed drain current: 104A
Power dissipation: 543W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 672mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 15A; ISOTOP; screw; Idm: 104A; 543W
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 15A
Pulsed drain current: 104A
Power dissipation: 543W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 672mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT20M16B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
товар відсутній
| APT20M16B2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
товар відсутній
| APT20M16LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
товар відсутній
| APT20M16LFLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube
товар відсутній
| APT20M16LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 694W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 694W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of channel: enhanced
товар відсутній
| APT20M16LLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube
товар відсутній
| APT20M18B2VFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
товар відсутній
| APT20M18B2VFRG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT20M18B2VFRG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT20M18B2VRG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
товар відсутній
| APT20M18LVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
товар відсутній
| APT20M18LVFRG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube
товар відсутній
| APT20M18LVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 200V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 625W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 330nC
Kind of channel: enhanced
товар відсутній
| APT20M18LVRG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) TO-264 Tube
товар відсутній
| APT20M20B2FLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
товар відсутній
| APT20M20B2FLLG |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube
Trans MOSFET N-CH 200V 100A 3-Pin(3+Tab) T-MAX Tube
товар відсутній
| APT20M20B2LLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
товар відсутній
| APT20M20JFLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT20M20JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 104A; ISOTOP; screw; Idm: 416A
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 104A
Pulsed drain current: 416A
Power dissipation: 463W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT20M20LFLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
товар відсутній
| APT20M20LLLG |
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 100A; Idm: 400A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 110nC
Kind of channel: enhanced
товар відсутній
| APT20M22JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 97A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 97A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 97A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT20M22JVR |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 97A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 200V 97A 4-Pin SOT-227 Tube
товар відсутній
| APT20M22JVRU2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 72A; ISOTOP; screw; Idm: 388A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Pulsed drain current: 388A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 22mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| APT20M22JVRU2 |
|
Виробник: Microchip Technology
Trans MOSFET N-CH 200V 97A 4-Pin SOT-227 Tube
Trans MOSFET N-CH 200V 97A 4-Pin SOT-227 Tube
товар відсутній