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BU508A BU508A STMicroelectronics BU208A_508A_508AFI.pdf description Description: TRANS NPN 700V 8A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 4.5A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 7MHz
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 125 W
товару немає в наявності
 Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
BD677A BD677A STMicroelectronics en.CD00000939.pdf Description: TRANS NPN DARL 60V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
на замовлення 4226 шт:
термін постачання 21-31 дні (днів)
5+64.13 грн
50+28.32 грн
100+25.02 грн
500+18.02 грн
1000+16.26 грн
2000+14.78 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
2N5191 2N5191 STMicroelectronics 2N5191%2C%202N5192.pdf Description: TRANS NPN 60V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: SOT-32-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
BDW83C BDW83C STMicroelectronics BDW83C%2C%20BDW84C.pdf Description: TRANS NPN DARL 100V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 130 W
товару немає в наявності
 Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
2N6111 2N6111 STMicroelectronics 2N6111.pdf Description: TRANS PNP 30V 7A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 40 W
товару немає в наявності
В кошику  од. на суму  грн.
MJE2955T MJE2955T STMicroelectronics en.CD00000929.pdf Description: TRANS PNP 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
на замовлення 1834 шт:
термін постачання 21-31 дні (днів)
2+175.18 грн
50+82.36 грн
100+73.95 грн
500+55.59 грн
1000+51.15 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
2N5657 2N5657 STMicroelectronics 2N5657.pdf Description: TRANS NPN 350V 0.5A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 20 W
товару немає в наявності
В кошику  од. на суму  грн.
MJE340 MJE340 STMicroelectronics en.CD00000930.pdf Description: TRANS NPN 300V 0.5A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20.8 W
на замовлення 9343 шт:
термін постачання 21-31 дні (днів)
3+141.55 грн
50+65.64 грн
100+58.72 грн
500+43.72 грн
1000+40.06 грн
2000+36.97 грн
5000+33.09 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MJE350 MJE350 STMicroelectronics en.CD00000930.pdf Description: TRANS PNP 300V 0.5A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20.8 W
на замовлення 6328 шт:
термін постачання 21-31 дні (днів)
3+139.99 грн
50+64.72 грн
100+57.90 грн
500+43.08 грн
1000+39.46 грн
2000+36.41 грн
5000+32.58 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TIP47 TIP47 STMicroelectronics en.CD00000924.pdf Description: TRANS NPN 250V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2 W
на замовлення 2124 шт:
термін постачання 21-31 дні (днів)
3+140.77 грн
50+65.29 грн
100+58.43 грн
500+43.53 грн
1000+39.89 грн
2000+36.84 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BUR51 BUR51 STMicroelectronics BUR51.pdf Description: TRANS NPN 200V 60A TO-3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5A, 50A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 16MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 350 W
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
BFX34 BFX34 STMicroelectronics CD00000933.pdf Description: TRANS NPN 60V 5A TO-39
товару немає в наявності
В кошику  од. на суму  грн.
2N2102 2N2102 STMicroelectronics 2N2102.pdf Description: TRANS NPN 65V 1A TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 1 W
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
2N1893 2N1893 STMicroelectronics 2N1893.pdf Description: TRANS NPN 80V 0.5A TO-39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
BUL216 BUL216 STMicroelectronics en.CD00000009.pdf Description: TRANS NPN 800V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 660mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 400mA, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 90 W
на замовлення 2872 шт:
термін постачання 21-31 дні (днів)
2+202.56 грн
50+96.95 грн
100+87.43 грн
500+66.38 грн
1000+61.34 грн
2000+57.11 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
STPS5H100B STPS5H100B STMicroelectronics stps5h100.pdf Description: DIODE SCHOTTKY 100V 5A DPAK
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STP3NB100 STP3NB100 STMicroelectronics STP3NB100_FP.pdf Description: MOSFET N-CH 1000V 3A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STP80NF10 STP80NF10 STMicroelectronics en.CD00001997.pdf description Description: MOSFET N-CH 100V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 821 шт:
термін постачання 21-31 дні (днів)
2+276.07 грн
50+134.67 грн
100+121.96 грн
500+93.54 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
STW60NE10 STW60NE10 STMicroelectronics STW60NE10.pdf Description: MOSFET N-CH 100V 60A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
STP50NE10 STP50NE10 STMicroelectronics Description: MOSFET N-CH 100V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STP35NF10 STP35NF10 STMicroelectronics ST%28B%2CP%2935NF10.pdf Description: MOSFET N-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 17.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STW8NB100 STW8NB100 STMicroelectronics STW8NB100.pdf Description: MOSFET N-CH 1000V 7.3A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
STP4NB100 STP4NB100 STMicroelectronics STP4NB100_FP.pdf Description: MOSFET N-CH 1000V 3.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
ESM6045DV ESM6045DV STMicroelectronics en.CD00000797.pdf Description: TRANS NPN DARL 450V 84A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.35V @ 4A, 70A
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 70A, 5V
Supplier Device Package: ISOTOP®
Current - Collector (Ic) (Max): 84 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 250 W
товару немає в наявності
 Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
VNP49N04 VNP49N04 STMicroelectronics VNP49N04.pdf Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: TO-220
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 35V (Max)
Input Type: Non-Inverting
Rds On (Typ): 20mOhm (Max)
Output Configuration: Low Side
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Features: Status Flag
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STP19NB20 STP19NB20 STMicroelectronics STP19NB20%28FP%2C-1%29.pdf Description: MOSFET N-CH 200V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STGF3NB60FD STGF3NB60FD STMicroelectronics STGx3NB60F%28D%29.pdf Description: IGBT 600V 6A TO-220FP
Power - Max: 25 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Gate Charge: 16 nC
Test Condition: 480V, 3A, 10Ohm, 15V
Switching Energy: 125µJ (off)
Td (on/off) @ 25°C: 12.5ns/105ns
Supplier Device Package: TO-220FP
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 45 ns
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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STGP3NB60FD STGP3NB60FD STMicroelectronics STGx3NB60F%28D%29.pdf Description: IGBT 600V 6A 68W TO220
Power - Max: 68 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Gate Charge: 16 nC
Test Condition: 480V, 3A, 10Ohm, 15V
Switching Energy: 125µJ (off)
Td (on/off) @ 25°C: 12.5ns/105ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 45 ns
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 2000 шт
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STGP3NB60F STGP3NB60F STMicroelectronics STGx3NB60F%28D%29.pdf Description: IGBT 600V 6A 68W TO220
Power - Max: 68 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Gate Charge: 16 nC
Test Condition: 480V, 3A, 10Ohm, 15V
Switching Energy: 125µJ (off)
Td (on/off) @ 25°C: 12.5ns/105ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 45 ns
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
STGW20NB60KD STGW20NB60KD STMicroelectronics STGW20NB60KD.pdf Description: IGBT 600V 50A 170W TO247
Switching Energy: 675µJ (on), 500µJ (off)
Td (on/off) @ 25°C: 39ns/105ns
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Reverse Recovery Time (trr): 80.5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 170 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Gate Charge: 85 nC
Test Condition: 480V, 20A, 10Ohm, 15V
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VIPER100A(022Y) VIPER100A(022Y) STMicroelectronics VIPER100_SP_A_ASP.pdf Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Power (Watts): 100 W
Part Status: Obsolete
Control Features: EN, Frequency Control, Soft Start
Voltage - Start Up: 11 V
Fault Protection: Current Limiting, Over Temperature
Supplier Device Package: 5-PENTAWATT
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: Up to 200kHz
Mounting Type: Surface Mount
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STE110NS20FD STE110NS20FD STMicroelectronics en.CD00002404.pdf Description: MOSFET N-CH 200V 110A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 504 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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STW38NB20 STW38NB20 STMicroelectronics STW38NB20.pdf Description: MOSFET N-CH 200V 38A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
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STW34NB20 STW34NB20 STMicroelectronics STW34NB20.pdf Description: MOSFET N-CH 200V 34A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 600 шт
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VN610SP VN610SP STMicroelectronics en.CD00001614.pdf Description: IC PWR DRIVER N-CHAN 1:1 PWRSO10
Current - Output (Max): 45A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 36V
Input Type: Non-Inverting
Rds On (Typ): 10mOhm (Max)
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: PowerSO-10 Exposed Bottom Pad
Features: Auto Restart
Packaging: Tube
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: 10-PowerSO
Ratio - Input:Output: 1:1
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STW20NB50 STW20NB50 STMicroelectronics STW20NB50.pdf Description: MOSFET N-CH 500V 20A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
STP20NM50 STP20NM50 STMicroelectronics en.CD00002374.pdf Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
на замовлення 339 шт:
термін постачання 21-31 дні (днів)
1+484.10 грн
50+248.21 грн
100+227.22 грн
В кошику  од. на суму  грн.
STW15NB50 STW15NB50 STMicroelectronics STH15NB50FI, STW15NB50.pdf Description: MOSFET N-CH 500V 14.6A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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STP12NM50FP STP12NM50FP STMicroelectronics en.CD00002079.pdf Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 663 шт:
термін постачання 21-31 дні (днів)
1+388.69 грн
50+196.12 грн
100+178.89 грн
500+139.56 грн
В кошику  од. на суму  грн.
STP12NM50 STP12NM50 STMicroelectronics en.CD00002079.pdf description Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 1008 шт:
термін постачання 21-31 дні (днів)
1+440.30 грн
50+224.44 грн
100+205.18 грн
500+160.90 грн
1000+150.74 грн
В кошику  од. на суму  грн.
VNP28N04 VNP28N04 STMicroelectronics VNP28N04.pdf Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: TO-220
Ratio - Input:Output: 1:1
Current - Output (Max): 20A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 35V (Max)
Input Type: Non-Inverting
Rds On (Typ): 35mOhm (Max)
Output Configuration: Low Side
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Features: Status Flag
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
VNS3NV04D VNS3NV04D STMicroelectronics en.CD00002222.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 120mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
VND7NV04 VND7NV04 STMicroelectronics en.CD00002209.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: DPAK
Ratio - Input:Output: 1:1
Current - Output (Max): 6A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 36V (Max)
Input Type: Non-Inverting
Rds On (Typ): 60mOhm (Max)
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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STW50NB20 STW50NB20 STMicroelectronics STW50NB20.pdf Description: MOSFET N-CH 200V 50A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
VNB35NV04 VNB35NV04 STMicroelectronics VN%28B%2CP%2CV%2CW%2935NV04.pdf Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Input Type: Non-Inverting
Rds On (Typ): 13mOhm (Max)
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: D2PAK
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 36V (Max)
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VNS1NV04 VNS1NV04 STMicroelectronics CD00002207.pdf Description: MOSFET N-CH 40V 1.7A 8-SOIC
на замовлення 236 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
VND14NV04-E VND14NV04-E STMicroelectronics en.CD00002219.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STP5NB40 STP5NB40 STMicroelectronics STP5NB40_FP.pdf description Description: MOSFET N-CH 400V 4.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.3A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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STP80NF03L-04 STP80NF03L-04 STMicroelectronics STP80NF03L.pdf Description: MOSFET N-CH 30V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
VIPER50A(022Y) VIPER50A(022Y) STMicroelectronics VIPER50_SP_A_ASP.pdf Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: Frequency Control, Soft Start, Sync
Part Status: Obsolete
Power (Watts): 50 W
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
VN920-B5 VN920-B5 STMicroelectronics VN920_-B5_SO.pdf Description: IC PWR DRIVER N-CHAN 1:1 P2PAK
Features: Auto Restart
Packaging: Tube
Package / Case: P2PAK (4 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: P2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
VN920 VN920 STMicroelectronics VN920_-B5_SO.pdf Description: IC PWR DRVR N-CH 1:1 5PENTAWATT
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: 5-PENTAWATT
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 36V
Input Type: Non-Inverting
Rds On (Typ): 16mOhm (Max)
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: Pentawatt-5 (Vertical, Bent and Staggered Leads)
Features: Auto Restart
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STY34NB50 STY34NB50 STMicroelectronics STY34NB50.pdf Description: MOSFET N-CH 500V 34A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 17A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STTA3006P STMicroelectronics en.CD00000745.pdf Description: DIODE ARRAY GP 600V 30A SOD-93
Packaging: Tube
Package / Case: SOD-93-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOD-93-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 150 µA @ 480 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
STTA3006CW STTA3006CW STMicroelectronics en.CD00004911.pdf Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 480 V
товару немає в наявності
 Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
STTA2006P STMicroelectronics Description: DIODE STANDARD 600V 20A SOD932
Packaging: Tube
Package / Case: SOD-93-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: SOD-93-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
 Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
STTA1206D STTA1206D STMicroelectronics en.CD00004895.pdf Description: DIODE STANDARD 600V 12A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
ITA25B1 ITA25B1 STMicroelectronics en.CD00047510.pdf Description: TVS DIODE 24VWM 38VC 8-SOIC
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25V
Bidirectional Channels: 5
Supplier Device Package: 8-SOIC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Capacitance @ Frequency: 300pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
BYW99W-200 BYW99W-200 STMicroelectronics en.CD00000692.pdf Description: DIODE ARRAY GP 200V 15A TO247-3
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
BYV541V-200 BYV541V-200 STMicroelectronics en.CD00000687.pdf description Description: DIODE MODULE GP 200V 50A ISOTOP
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 50A
товару немає в наявності
 Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
BU508A description BU208A_508A_508AFI.pdf
BU508A
Виробник: STMicroelectronics
Description: TRANS NPN 700V 8A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 4.5A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 7MHz
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 125 W
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
BD677A en.CD00000939.pdf
BD677A
Виробник: STMicroelectronics
Description: TRANS NPN DARL 60V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
на замовлення 4226 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+64.13 грн
50+28.32 грн
100+25.02 грн
500+18.02 грн
1000+16.26 грн
2000+14.78 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
2N5191 2N5191%2C%202N5192.pdf
2N5191
Виробник: STMicroelectronics
Description: TRANS NPN 60V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: SOT-32-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
BDW83C BDW83C%2C%20BDW84C.pdf
BDW83C
Виробник: STMicroelectronics
Description: TRANS NPN DARL 100V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 130 W
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
2N6111 2N6111.pdf
2N6111
Виробник: STMicroelectronics
Description: TRANS PNP 30V 7A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 40 W
товару немає в наявності
В кошику  од. на суму  грн.
MJE2955T en.CD00000929.pdf
MJE2955T
Виробник: STMicroelectronics
Description: TRANS PNP 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
на замовлення 1834 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+175.18 грн
50+82.36 грн
100+73.95 грн
500+55.59 грн
1000+51.15 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
2N5657 2N5657.pdf
2N5657
Виробник: STMicroelectronics
Description: TRANS NPN 350V 0.5A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 20 W
товару немає в наявності
В кошику  од. на суму  грн.
MJE340 en.CD00000930.pdf
MJE340
Виробник: STMicroelectronics
Description: TRANS NPN 300V 0.5A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20.8 W
на замовлення 9343 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+141.55 грн
50+65.64 грн
100+58.72 грн
500+43.72 грн
1000+40.06 грн
2000+36.97 грн
5000+33.09 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MJE350 en.CD00000930.pdf
MJE350
Виробник: STMicroelectronics
Description: TRANS PNP 300V 0.5A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20.8 W
на замовлення 6328 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+139.99 грн
50+64.72 грн
100+57.90 грн
500+43.08 грн
1000+39.46 грн
2000+36.41 грн
5000+32.58 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TIP47 en.CD00000924.pdf
TIP47
Виробник: STMicroelectronics
Description: TRANS NPN 250V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2 W
на замовлення 2124 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+140.77 грн
50+65.29 грн
100+58.43 грн
500+43.53 грн
1000+39.89 грн
2000+36.84 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
BUR51 BUR51.pdf
BUR51
Виробник: STMicroelectronics
Description: TRANS NPN 200V 60A TO-3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5A, 50A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 16MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 350 W
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
BFX34 CD00000933.pdf
BFX34
Виробник: STMicroelectronics
Description: TRANS NPN 60V 5A TO-39
товару немає в наявності
В кошику  од. на суму  грн.
2N2102 2N2102.pdf
2N2102
Виробник: STMicroelectronics
Description: TRANS NPN 65V 1A TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 1 W
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
2N1893 2N1893.pdf
2N1893
Виробник: STMicroelectronics
Description: TRANS NPN 80V 0.5A TO-39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
BUL216 en.CD00000009.pdf
BUL216
Виробник: STMicroelectronics
Description: TRANS NPN 800V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 660mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 400mA, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 90 W
на замовлення 2872 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+202.56 грн
50+96.95 грн
100+87.43 грн
500+66.38 грн
1000+61.34 грн
2000+57.11 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
STPS5H100B stps5h100.pdf
STPS5H100B
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 5A DPAK
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DPAK
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STP3NB100 STP3NB100_FP.pdf
STP3NB100
Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 3A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STP80NF10 description en.CD00001997.pdf
STP80NF10
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 821 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+276.07 грн
50+134.67 грн
100+121.96 грн
500+93.54 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
STW60NE10 STW60NE10.pdf
STW60NE10
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 60A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
STP50NE10
STP50NE10
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STP35NF10 ST%28B%2CP%2935NF10.pdf
STP35NF10
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 17.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STW8NB100 STW8NB100.pdf
STW8NB100
Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 7.3A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
STP4NB100 STP4NB100_FP.pdf
STP4NB100
Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 3.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
ESM6045DV en.CD00000797.pdf
ESM6045DV
Виробник: STMicroelectronics
Description: TRANS NPN DARL 450V 84A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.35V @ 4A, 70A
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 70A, 5V
Supplier Device Package: ISOTOP®
Current - Collector (Ic) (Max): 84 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 250 W
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
VNP49N04 VNP49N04.pdf
VNP49N04
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: TO-220
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 35V (Max)
Input Type: Non-Inverting
Rds On (Typ): 20mOhm (Max)
Output Configuration: Low Side
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Features: Status Flag
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STP19NB20 STP19NB20%28FP%2C-1%29.pdf
STP19NB20
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STGF3NB60FD STGx3NB60F%28D%29.pdf
STGF3NB60FD
Виробник: STMicroelectronics
Description: IGBT 600V 6A TO-220FP
Power - Max: 25 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Gate Charge: 16 nC
Test Condition: 480V, 3A, 10Ohm, 15V
Switching Energy: 125µJ (off)
Td (on/off) @ 25°C: 12.5ns/105ns
Supplier Device Package: TO-220FP
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 45 ns
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
STGP3NB60FD STGx3NB60F%28D%29.pdf
STGP3NB60FD
Виробник: STMicroelectronics
Description: IGBT 600V 6A 68W TO220
Power - Max: 68 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Gate Charge: 16 nC
Test Condition: 480V, 3A, 10Ohm, 15V
Switching Energy: 125µJ (off)
Td (on/off) @ 25°C: 12.5ns/105ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 45 ns
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
STGP3NB60F STGx3NB60F%28D%29.pdf
STGP3NB60F
Виробник: STMicroelectronics
Description: IGBT 600V 6A 68W TO220
Power - Max: 68 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Gate Charge: 16 nC
Test Condition: 480V, 3A, 10Ohm, 15V
Switching Energy: 125µJ (off)
Td (on/off) @ 25°C: 12.5ns/105ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 45 ns
Input Type: Standard
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
STGW20NB60KD STGW20NB60KD.pdf
STGW20NB60KD
Виробник: STMicroelectronics
Description: IGBT 600V 50A 170W TO247
Switching Energy: 675µJ (on), 500µJ (off)
Td (on/off) @ 25°C: 39ns/105ns
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Reverse Recovery Time (trr): 80.5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 170 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Gate Charge: 85 nC
Test Condition: 480V, 20A, 10Ohm, 15V
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VIPER100A(022Y) VIPER100_SP_A_ASP.pdf
VIPER100A(022Y)
Виробник: STMicroelectronics
Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Power (Watts): 100 W
Part Status: Obsolete
Control Features: EN, Frequency Control, Soft Start
Voltage - Start Up: 11 V
Fault Protection: Current Limiting, Over Temperature
Supplier Device Package: 5-PENTAWATT
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: Up to 200kHz
Mounting Type: Surface Mount
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STE110NS20FD en.CD00002404.pdf
STE110NS20FD
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 110A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 504 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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STW38NB20 STW38NB20.pdf
STW38NB20
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 38A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
STW34NB20 STW34NB20.pdf
STW34NB20
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 34A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
VN610SP en.CD00001614.pdf
VN610SP
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 PWRSO10
Current - Output (Max): 45A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 36V
Input Type: Non-Inverting
Rds On (Typ): 10mOhm (Max)
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: PowerSO-10 Exposed Bottom Pad
Features: Auto Restart
Packaging: Tube
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: 10-PowerSO
Ratio - Input:Output: 1:1
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STW20NB50 STW20NB50.pdf
STW20NB50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
STP20NM50 en.CD00002374.pdf
STP20NM50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
на замовлення 339 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+484.10 грн
50+248.21 грн
100+227.22 грн
В кошику  од. на суму  грн.
STW15NB50 STH15NB50FI, STW15NB50.pdf
STW15NB50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 14.6A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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STP12NM50FP en.CD00002079.pdf
STP12NM50FP
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 663 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+388.69 грн
50+196.12 грн
100+178.89 грн
500+139.56 грн
В кошику  од. на суму  грн.
STP12NM50 description en.CD00002079.pdf
STP12NM50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 1008 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+440.30 грн
50+224.44 грн
100+205.18 грн
500+160.90 грн
1000+150.74 грн
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VNP28N04 VNP28N04.pdf
VNP28N04
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: TO-220
Ratio - Input:Output: 1:1
Current - Output (Max): 20A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 35V (Max)
Input Type: Non-Inverting
Rds On (Typ): 35mOhm (Max)
Output Configuration: Low Side
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Features: Status Flag
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
VNS3NV04D en.CD00002222.pdf
VNS3NV04D
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 120mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
VND7NV04 en.CD00002209.pdf
VND7NV04
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: DPAK
Ratio - Input:Output: 1:1
Current - Output (Max): 6A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 36V (Max)
Input Type: Non-Inverting
Rds On (Typ): 60mOhm (Max)
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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STW50NB20 STW50NB20.pdf
STW50NB20
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 50A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
VNB35NV04 VN%28B%2CP%2CV%2CW%2935NV04.pdf
VNB35NV04
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 D2PAK
Input Type: Non-Inverting
Rds On (Typ): 13mOhm (Max)
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: D2PAK
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 36V (Max)
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VNS1NV04 CD00002207.pdf
VNS1NV04
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 1.7A 8-SOIC
на замовлення 236 шт:
термін постачання 21-31 дні (днів)
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VND14NV04-E en.CD00002219.pdf
VND14NV04-E
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 3000 шт
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STP5NB40 description STP5NB40_FP.pdf
STP5NB40
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 4.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.3A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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STP80NF03L-04 STP80NF03L.pdf
STP80NF03L-04
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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VIPER50A(022Y) VIPER50_SP_A_ASP.pdf
VIPER50A(022Y)
Виробник: STMicroelectronics
Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: Frequency Control, Soft Start, Sync
Part Status: Obsolete
Power (Watts): 50 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
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VN920-B5 VN920_-B5_SO.pdf
VN920-B5
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 P2PAK
Features: Auto Restart
Packaging: Tube
Package / Case: P2PAK (4 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 16mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: P2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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VN920 VN920_-B5_SO.pdf
VN920
Виробник: STMicroelectronics
Description: IC PWR DRVR N-CH 1:1 5PENTAWATT
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: 5-PENTAWATT
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 36V
Input Type: Non-Inverting
Rds On (Typ): 16mOhm (Max)
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: Pentawatt-5 (Vertical, Bent and Staggered Leads)
Features: Auto Restart
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
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STY34NB50 STY34NB50.pdf
STY34NB50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 34A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 17A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
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STTA3006P en.CD00000745.pdf
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 30A SOD-93
Packaging: Tube
Package / Case: SOD-93-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOD-93-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 150 µA @ 480 V
товару немає в наявності
Мінімальне замовлення: 300 шт
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STTA3006CW en.CD00004911.pdf
STTA3006CW
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 480 V
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Мінімальне замовлення: 600 шт
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STTA2006P
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 20A SOD932
Packaging: Tube
Package / Case: SOD-93-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: SOD-93-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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Мінімальне замовлення: 600 шт
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STTA1206D en.CD00004895.pdf
STTA1206D
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 12A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
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ITA25B1 en.CD00047510.pdf
ITA25B1
Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 38VC 8-SOIC
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 38V
Voltage - Breakdown (Min): 25V
Bidirectional Channels: 5
Supplier Device Package: 8-SOIC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 25A (8/20µs)
Capacitance @ Frequency: 300pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 2000 шт
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BYW99W-200 en.CD00000692.pdf
BYW99W-200
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 200V 15A TO247-3
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 600 шт
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BYV541V-200 description en.CD00000687.pdf
BYV541V-200
Виробник: STMicroelectronics
Description: DIODE MODULE GP 200V 50A ISOTOP
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 50 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: ISOTOP®
Current - Average Rectified (Io) (per Diode): 50A
товару немає в наявності
Мінімальне замовлення: 100 шт
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