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T1635-600G T1635-600G STMicroelectronics en.CD00002265.pdf description Description: TRIAC ALTERNISTOR 600V 16A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
на замовлення 685 шт:
термін постачання 21-31 дні (днів)
3+121.14 грн
50+55.29 грн
100+49.35 грн
500+36.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCP02-150B1 LCP02-150B1 STMicroelectronics LCP02-150B1.pdf Description: THYRISTOR 30A 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Supplier Device Package: 8-SO
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
товару немає в наявності
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2N6039 2N6039 STMicroelectronics 2N6036%2C%202N6039.pdf description Description: TRANS NPN DARL 80V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: SOT-32-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
товару немає в наявності
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AVS12CB AVS12CB STMicroelectronics en.CD00000851.pdf Description: TRIAC INT TRIGGER 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Internally Triggered
Configuration: Single
Operating Temperature: 0°C ~ 125°C (TJ)
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 105A
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1129 шт:
термін постачання 21-31 дні (днів)
2+243.92 грн
50+118.31 грн
100+107.00 грн
500+81.79 грн
1000+75.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ST1284-01A8 ST1284-01A8 STMicroelectronics ST1284-xxA8.pdf Description: FILTER RC 33 OHMS ESD SMD
Packaging: Tube
Package / Case: 28-LSSOP (0.154", 3.90mm Width)
Size / Dimension: 0.389" L x 0.154" W (9.89mm x 3.90mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: 0°C ~ 70°C
Values: R = 33Ohms, 4.7kOhms, C = 180pF
Height: 0.069" (1.75mm)
Applications: Data Lines for Mobile Devices
Technology: RC
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 17
товару немає в наявності
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ACST8-8CFP ACST8-8CFP STMicroelectronics en.CD00002258.pdf Description: TRIAC 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 85A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
товару немає в наявності
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AVS08CB AVS08CB STMicroelectronics AVS08.pdf Description: TRIAC INT TRIGGER 500V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Internally Triggered
Configuration: Single
Operating Temperature: -10°C ~ 125°C (TJ)
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 70A
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 5 A
Voltage - Off State: 500 V
на замовлення 805 шт:
термін постачання 21-31 дні (днів)
4+90.04 грн
50+69.58 грн
100+57.26 грн
500+48.52 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ACST4-7SFP ACST4-7SFP STMicroelectronics ACST4%20Series.pdf Description: TRIAC 700V 4A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220FPAC
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 700 V
товару немає в наявності
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MJE3055T MJE3055T STMicroelectronics en.CD00000929.pdf Description: TRANS NPN 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
на замовлення 3813 шт:
термін постачання 21-31 дні (днів)
3+116.23 грн
50+53.44 грн
100+47.68 грн
500+35.25 грн
1000+32.19 грн
2000+29.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
D44H8 D44H8 STMicroelectronics en.CD00000942.pdf Description: TRANS NPN 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 50 W
на замовлення 1781 шт:
термін постачання 21-31 дні (днів)
3+136.70 грн
50+62.54 грн
100+55.83 грн
500+41.36 грн
1000+37.81 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUX98APW BUX98APW STMicroelectronics BUX98APW.pdf Description: TRANS NPN 450V 24A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3.2A, 16A
Current - Collector Cutoff (Max): 2mA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 200 W
товару немає в наявності
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2N3439 2N3439 STMicroelectronics 2N3439, 2N3440.pdf Description: TRANS NPN 350V 1A TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 1 W
товару немає в наявності
В кошику  од. на суму  грн.
D45H11 D45H11 STMicroelectronics en.CD00000942.pdf Description: TRANS PNP 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
на замовлення 626 шт:
термін постачання 21-31 дні (днів)
3+121.96 грн
50+56.00 грн
100+49.98 грн
500+37.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
D45H8 D45H8 STMicroelectronics en.CD00000942.pdf Description: TRANS PNP 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 50 W
товару немає в наявності
В кошику  од. на суму  грн.
BUL38D BUL38D STMicroelectronics en.CD00002105.pdf Description: TRANS NPN 450V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 750mA, 3A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 80 W
на замовлення 1378 шт:
термін постачання 21-31 дні (днів)
3+132.60 грн
50+61.32 грн
100+54.82 грн
500+40.75 грн
1000+37.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MJE521 MJE521 STMicroelectronics en.CD00000932.pdf Description: TRANS NPN 40V 4A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 1V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
товару немає в наявності
В кошику  од. на суму  грн.
D45H5 D45H5 STMicroelectronics en.CD00000942.pdf Description: TRANS PNP 45V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 50 W
товару немає в наявності
В кошику  од. на суму  грн.
MJE210 MJE210 STMicroelectronics mje210-d.pdf Description: TRANS PNP 25V 5A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
2N5192 2N5192 STMicroelectronics 2N5191%2C%202N5192.pdf Description: TRANS NPN 80V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
товару немає в наявності
В кошику  од. на суму  грн.
2N1711 2N1711 STMicroelectronics 2N1711.pdf Description: TRANS NPN 50V 0.5A TO-39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
BU508A BU508A STMicroelectronics BU208A_508A_508AFI.pdf description Description: TRANS NPN 700V 8A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 4.5A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 7MHz
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 125 W
товару немає в наявності
В кошику  од. на суму  грн.
BD677A BD677A STMicroelectronics en.CD00000939.pdf Description: TRANS NPN DARL 60V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
на замовлення 509 шт:
термін постачання 21-31 дні (днів)
6+63.03 грн
50+28.01 грн
100+24.73 грн
500+17.82 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2N5191 2N5191 STMicroelectronics 2N5191%2C%202N5192.pdf Description: TRANS NPN 60V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: SOT-32-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
товару немає в наявності
В кошику  од. на суму  грн.
BDW83C BDW83C STMicroelectronics BDW83C%2C%20BDW84C.pdf Description: TRANS NPN DARL 100V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 130 W
товару немає в наявності
В кошику  од. на суму  грн.
2N6111 2N6111 STMicroelectronics 2N6111.pdf Description: TRANS PNP 30V 7A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 40 W
товару немає в наявності
В кошику  од. на суму  грн.
MJE2955T MJE2955T STMicroelectronics en.CD00000929.pdf Description: TRANS PNP 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
3+117.05 грн
50+53.84 грн
100+48.03 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2N5657 2N5657 STMicroelectronics 2N5657.pdf Description: TRANS NPN 350V 0.5A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 20 W
товару немає в наявності
В кошику  од. на суму  грн.
MJE340 MJE340 STMicroelectronics en.CD00000930.pdf Description: TRANS NPN 300V 0.5A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20.8 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
5+75.31 грн
50+33.47 грн
100+29.64 грн
500+21.49 грн
1000+19.45 грн
2000+17.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJE350 MJE350 STMicroelectronics en.CD00000930.pdf Description: TRANS PNP 300V 0.5A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20.8 W
на замовлення 3222 шт:
термін постачання 21-31 дні (днів)
5+78.58 грн
50+34.82 грн
100+30.87 грн
500+22.42 грн
1000+20.31 грн
2000+18.53 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TIP47 TIP47 STMicroelectronics en.CD00000924.pdf Description: TRANS NPN 250V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2 W
на замовлення 3332 шт:
термін постачання 21-31 дні (днів)
4+90.86 грн
50+40.91 грн
100+36.34 грн
500+26.57 грн
1000+24.15 грн
2000+22.11 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BUR51 BUR51 STMicroelectronics BUR51.pdf Description: TRANS NPN 200V 60A TO-3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5A, 50A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 16MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 350 W
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BFX34 BFX34 STMicroelectronics CD00000933.pdf Description: TRANS NPN 60V 5A TO-39
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В кошику  од. на суму  грн.
2N2102 2N2102 STMicroelectronics 2N2102.pdf Description: TRANS NPN 65V 1A TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 1 W
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2N1893 2N1893 STMicroelectronics 2N1893.pdf Description: TRANS NPN 80V 0.5A TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
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BUL216 BUL216 STMicroelectronics en.CD00000009.pdf Description: TRANS NPN 800V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 660mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 400mA, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 90 W
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
2+248.83 грн
50+119.79 грн
100+108.14 грн
500+82.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STPS5H100B STPS5H100B STMicroelectronics stps5h100.pdf Description: DIODE SCHOTTKY 100V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
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STP3NB100 STP3NB100 STMicroelectronics STP3NB100_FP.pdf Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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STP80NF10 STP80NF10 STMicroelectronics en.CD00001997.pdf description Description: MOSFET N-CH 100V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
на замовлення 645 шт:
термін постачання 21-31 дні (днів)
2+293.04 грн
50+144.42 грн
100+131.03 грн
500+100.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STW60NE10 STW60NE10 STMicroelectronics STW60NE10.pdf Description: MOSFET N-CH 100V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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STP50NE10 STP50NE10 STMicroelectronics en.CD00001511.pdf Description: MOSFET N-CH 100V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
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STP35NF10 STP35NF10 STMicroelectronics ST%28B%2CP%2935NF10.pdf Description: MOSFET N-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 17.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
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STW8NB100 STW8NB100 STMicroelectronics STW8NB100.pdf Description: MOSFET N-CH 1000V 7.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3.6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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STP4NB100 STP4NB100 STMicroelectronics STP4NB100_FP.pdf Description: MOSFET N-CH 1000V 3.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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ESM6045DV ESM6045DV STMicroelectronics en.CD00000797.pdf Description: TRANS NPN DARL 450V 84A ISOTOP
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VNP49N04 VNP49N04 STMicroelectronics VNP49N04.pdf Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Features: Status Flag
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 20mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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STP19NB20 STP19NB20 STMicroelectronics STP19NB20(FP,-1).pdf Description: MOSFET N-CH 200V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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STGF3NB60FD STGF3NB60FD STMicroelectronics STGx3NB60F%28D%29.pdf Description: IGBT 600V 6A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 12.5ns/105ns
Switching Energy: 125µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 16 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 25 W
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STGP3NB60FD STGP3NB60FD STMicroelectronics STGx3NB60F%28D%29.pdf Description: IGBT 600V 6A 68W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 12.5ns/105ns
Switching Energy: 125µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 16 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 68 W
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STGP3NB60F STGP3NB60F STMicroelectronics STGx3NB60F%28D%29.pdf Description: IGBT 600V 6A 68W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 12.5ns/105ns
Switching Energy: 125µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 16 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 68 W
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STGW20NB60KD STGW20NB60KD STMicroelectronics STGW20NB60KD.pdf Description: IGBT 600V 50A 170W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80.5 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 39ns/105ns
Switching Energy: 675µJ (on), 500µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 170 W
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VIPER100A(022Y) VIPER100A(022Y) STMicroelectronics VIPER100_SP_A_ASP.pdf Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 100 W
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STE110NS20FD STE110NS20FD STMicroelectronics en.CD00002404.pdf Description: MOSFET N-CH 200V 110A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 504 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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STW38NB20 STW38NB20 STMicroelectronics STW38NB20.pdf Description: MOSFET N-CH 200V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
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STW34NB20 STW34NB20 STMicroelectronics STW34NB20.pdf Description: MOSFET N-CH 200V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
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VN610SP VN610SP STMicroelectronics en.CD00001614.pdf Description: IC PWR DRIVER N-CHAN 1:1 PWRSO10
Features: Auto Restart
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 10mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 45A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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VNP14N04 VNP14N04 STMicroelectronics VNP14N04.pdf Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 70mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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STW20NB50 STW20NB50 STMicroelectronics STW20NB50.pdf Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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STP20NM50 STP20NM50 STMicroelectronics en.CD00002374.pdf Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
на замовлення 489 шт:
термін постачання 21-31 дні (днів)
1+465.75 грн
50+239.24 грн
100+219.01 грн
В кошику  од. на суму  грн.
STW15NB50 STW15NB50 STMicroelectronics STH15NB50FI, STW15NB50.pdf Description: MOSFET N-CH 500V 14.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
товару немає в наявності
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STP12NM50FP STP12NM50FP STMicroelectronics en.CD00002079.pdf Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
1+386.35 грн
50+194.96 грн
100+177.83 грн
500+138.72 грн
В кошику  од. на суму  грн.
T1635-600G description en.CD00002265.pdf
T1635-600G
Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 600V 16A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
на замовлення 685 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.14 грн
50+55.29 грн
100+49.35 грн
500+36.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCP02-150B1 LCP02-150B1.pdf
LCP02-150B1
Виробник: STMicroelectronics
Description: THYRISTOR 30A 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Supplier Device Package: 8-SO
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 30 A
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2N6039 description 2N6036%2C%202N6039.pdf
2N6039
Виробник: STMicroelectronics
Description: TRANS NPN DARL 80V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: SOT-32-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
товару немає в наявності
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AVS12CB en.CD00000851.pdf
AVS12CB
Виробник: STMicroelectronics
Description: TRIAC INT TRIGGER 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Internally Triggered
Configuration: Single
Operating Temperature: 0°C ~ 125°C (TJ)
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 105A
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1129 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+243.92 грн
50+118.31 грн
100+107.00 грн
500+81.79 грн
1000+75.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ST1284-01A8 ST1284-xxA8.pdf
ST1284-01A8
Виробник: STMicroelectronics
Description: FILTER RC 33 OHMS ESD SMD
Packaging: Tube
Package / Case: 28-LSSOP (0.154", 3.90mm Width)
Size / Dimension: 0.389" L x 0.154" W (9.89mm x 3.90mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: 0°C ~ 70°C
Values: R = 33Ohms, 4.7kOhms, C = 180pF
Height: 0.069" (1.75mm)
Applications: Data Lines for Mobile Devices
Technology: RC
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 17
товару немає в наявності
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ACST8-8CFP en.CD00002258.pdf
ACST8-8CFP
Виробник: STMicroelectronics
Description: TRIAC 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 85A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
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AVS08CB AVS08.pdf
AVS08CB
Виробник: STMicroelectronics
Description: TRIAC INT TRIGGER 500V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Internally Triggered
Configuration: Single
Operating Temperature: -10°C ~ 125°C (TJ)
Current - Non Rep. Surge 50, 60Hz (Itsm): 65A, 70A
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 5 A
Voltage - Off State: 500 V
на замовлення 805 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.04 грн
50+69.58 грн
100+57.26 грн
500+48.52 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ACST4-7SFP ACST4%20Series.pdf
ACST4-7SFP
Виробник: STMicroelectronics
Description: TRIAC 700V 4A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -30°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 33A
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220FPAC
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 700 V
товару немає в наявності
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MJE3055T en.CD00000929.pdf
MJE3055T
Виробник: STMicroelectronics
Description: TRANS NPN 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
на замовлення 3813 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.23 грн
50+53.44 грн
100+47.68 грн
500+35.25 грн
1000+32.19 грн
2000+29.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
D44H8 en.CD00000942.pdf
D44H8
Виробник: STMicroelectronics
Description: TRANS NPN 60V 10A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 50 W
на замовлення 1781 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.70 грн
50+62.54 грн
100+55.83 грн
500+41.36 грн
1000+37.81 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUX98APW BUX98APW.pdf
BUX98APW
Виробник: STMicroelectronics
Description: TRANS NPN 450V 24A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 3.2A, 16A
Current - Collector Cutoff (Max): 2mA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 200 W
товару немає в наявності
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2N3439 2N3439, 2N3440.pdf
2N3439
Виробник: STMicroelectronics
Description: TRANS NPN 350V 1A TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 1 W
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D45H11 en.CD00000942.pdf
D45H11
Виробник: STMicroelectronics
Description: TRANS PNP 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
на замовлення 626 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.96 грн
50+56.00 грн
100+49.98 грн
500+37.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
D45H8 en.CD00000942.pdf
D45H8
Виробник: STMicroelectronics
Description: TRANS PNP 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 50 W
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BUL38D en.CD00002105.pdf
BUL38D
Виробник: STMicroelectronics
Description: TRANS NPN 450V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 750mA, 3A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 80 W
на замовлення 1378 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.60 грн
50+61.32 грн
100+54.82 грн
500+40.75 грн
1000+37.30 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MJE521 en.CD00000932.pdf
MJE521
Виробник: STMicroelectronics
Description: TRANS NPN 40V 4A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 1V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
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D45H5 en.CD00000942.pdf
D45H5
Виробник: STMicroelectronics
Description: TRANS PNP 45V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 50 W
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MJE210 mje210-d.pdf
MJE210
Виробник: STMicroelectronics
Description: TRANS PNP 25V 5A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1.5 W
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2N5192 2N5191%2C%202N5192.pdf
2N5192
Виробник: STMicroelectronics
Description: TRANS NPN 80V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
товару немає в наявності
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2N1711 2N1711.pdf
2N1711
Виробник: STMicroelectronics
Description: TRANS NPN 50V 0.5A TO-39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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BU508A description BU208A_508A_508AFI.pdf
BU508A
Виробник: STMicroelectronics
Description: TRANS NPN 700V 8A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 2A, 4.5A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 7MHz
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 125 W
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BD677A en.CD00000939.pdf
BD677A
Виробник: STMicroelectronics
Description: TRANS NPN DARL 60V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
на замовлення 509 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+63.03 грн
50+28.01 грн
100+24.73 грн
500+17.82 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
2N5191 2N5191%2C%202N5192.pdf
2N5191
Виробник: STMicroelectronics
Description: TRANS NPN 60V 4A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: SOT-32-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
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BDW83C BDW83C%2C%20BDW84C.pdf
BDW83C
Виробник: STMicroelectronics
Description: TRANS NPN DARL 100V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 130 W
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2N6111 2N6111.pdf
2N6111
Виробник: STMicroelectronics
Description: TRANS PNP 30V 7A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 40 W
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MJE2955T en.CD00000929.pdf
MJE2955T
Виробник: STMicroelectronics
Description: TRANS PNP 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.05 грн
50+53.84 грн
100+48.03 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
2N5657 2N5657.pdf
2N5657
Виробник: STMicroelectronics
Description: TRANS NPN 350V 0.5A SOT32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 20 W
товару немає в наявності
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MJE340 en.CD00000930.pdf
MJE340
Виробник: STMicroelectronics
Description: TRANS NPN 300V 0.5A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20.8 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+75.31 грн
50+33.47 грн
100+29.64 грн
500+21.49 грн
1000+19.45 грн
2000+17.74 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MJE350 en.CD00000930.pdf
MJE350
Виробник: STMicroelectronics
Description: TRANS PNP 300V 0.5A SOT-32-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: SOT-32-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20.8 W
на замовлення 3222 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+78.58 грн
50+34.82 грн
100+30.87 грн
500+22.42 грн
1000+20.31 грн
2000+18.53 грн
Мінімальне замовлення: 5
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TIP47 en.CD00000924.pdf
TIP47
Виробник: STMicroelectronics
Description: TRANS NPN 250V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 2 W
на замовлення 3332 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+90.86 грн
50+40.91 грн
100+36.34 грн
500+26.57 грн
1000+24.15 грн
2000+22.11 грн
Мінімальне замовлення: 4
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BUR51 BUR51.pdf
BUR51
Виробник: STMicroelectronics
Description: TRANS NPN 200V 60A TO-3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5A, 50A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 4V
Frequency - Transition: 16MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 350 W
товару немає в наявності
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BFX34 CD00000933.pdf
BFX34
Виробник: STMicroelectronics
Description: TRANS NPN 60V 5A TO-39
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2N2102 2N2102.pdf
2N2102
Виробник: STMicroelectronics
Description: TRANS NPN 65V 1A TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 1 W
товару немає в наявності
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2N1893 2N1893.pdf
2N1893
Виробник: STMicroelectronics
Description: TRANS NPN 80V 0.5A TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: TO-39
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
товару немає в наявності
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BUL216 en.CD00000009.pdf
BUL216
Виробник: STMicroelectronics
Description: TRANS NPN 800V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 660mA, 2A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 400mA, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 90 W
на замовлення 999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+248.83 грн
50+119.79 грн
100+108.14 грн
500+82.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STPS5H100B stps5h100.pdf
STPS5H100B
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
товару немає в наявності
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STP3NB100 STP3NB100_FP.pdf
STP3NB100
Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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STP80NF10 description en.CD00001997.pdf
STP80NF10
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
на замовлення 645 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+293.04 грн
50+144.42 грн
100+131.03 грн
500+100.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STW60NE10 STW60NE10.pdf
STW60NE10
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
товару немає в наявності
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STP50NE10 en.CD00001511.pdf
STP50NE10
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
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STP35NF10 ST%28B%2CP%2935NF10.pdf
STP35NF10
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 17.5A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
товару немає в наявності
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STW8NB100 STW8NB100.pdf
STW8NB100
Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 7.3A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3.6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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STP4NB100 STP4NB100_FP.pdf
STP4NB100
Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 3.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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ESM6045DV en.CD00000797.pdf
ESM6045DV
Виробник: STMicroelectronics
Description: TRANS NPN DARL 450V 84A ISOTOP
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VNP49N04 VNP49N04.pdf
VNP49N04
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Features: Status Flag
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 20mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 30A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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STP19NB20 STP19NB20(FP,-1).pdf
STP19NB20
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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STGF3NB60FD STGx3NB60F%28D%29.pdf
STGF3NB60FD
Виробник: STMicroelectronics
Description: IGBT 600V 6A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 12.5ns/105ns
Switching Energy: 125µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 16 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 25 W
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STGP3NB60FD STGx3NB60F%28D%29.pdf
STGP3NB60FD
Виробник: STMicroelectronics
Description: IGBT 600V 6A 68W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 12.5ns/105ns
Switching Energy: 125µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 16 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 68 W
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STGP3NB60F STGx3NB60F%28D%29.pdf
STGP3NB60F
Виробник: STMicroelectronics
Description: IGBT 600V 6A 68W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 12.5ns/105ns
Switching Energy: 125µJ (off)
Test Condition: 480V, 3A, 10Ohm, 15V
Gate Charge: 16 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 68 W
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STGW20NB60KD STGW20NB60KD.pdf
STGW20NB60KD
Виробник: STMicroelectronics
Description: IGBT 600V 50A 170W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80.5 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 39ns/105ns
Switching Energy: 675µJ (on), 500µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 170 W
товару немає в наявності
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VIPER100A(022Y) VIPER100_SP_A_ASP.pdf
VIPER100A(022Y)
Виробник: STMicroelectronics
Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 100 W
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STE110NS20FD en.CD00002404.pdf
STE110NS20FD
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 110A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 504 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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STW38NB20 STW38NB20.pdf
STW38NB20
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
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STW34NB20 STW34NB20.pdf
STW34NB20
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
товару немає в наявності
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VN610SP en.CD00001614.pdf
VN610SP
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 PWRSO10
Features: Auto Restart
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 10mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 45A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-PowerSO
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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VNP14N04 VNP14N04.pdf
VNP14N04
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 70mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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STW20NB50 STW20NB50.pdf
STW20NB50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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STP20NM50 en.CD00002374.pdf
STP20NM50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
на замовлення 489 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+465.75 грн
50+239.24 грн
100+219.01 грн
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STW15NB50 STH15NB50FI, STW15NB50.pdf
STW15NB50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 14.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
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STP12NM50FP en.CD00002079.pdf
STP12NM50FP
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+386.35 грн
50+194.96 грн
100+177.83 грн
500+138.72 грн
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