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VIPER50A VIPER50A STMicroelectronics VIPER50_SP_A_ASP.pdf Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: Frequency Control, Soft Start, Sync
Part Status: Obsolete
Power (Watts): 50 W
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VIPER100 VIPER100 STMicroelectronics VIPER100_SP_A_ASP.pdf Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 100 W
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VIPer50SP VIPer50SP STMicroelectronics VIPER50_SP_A_ASP.pdf Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: Frequency Control, Soft Start, Sync
Part Status: Obsolete
Power (Watts): 50 W
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VB921ZVFI VB921ZVFI STMicroelectronics VB921ZVFI_SP.pdf Description: IC PWR DRVR BIPLR 1:1 ISOWATT220
Packaging: Tube
Package / Case: ISOWATT-220-3
Output Type: Bipolar
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.2V ~ 5.5V
Current - Output (Max): 7.5A
Ratio - Input:Output: 1:1
Supplier Device Package: ISOWATT-220
товару немає в наявності
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STW20NM50FD STW20NM50FD STMicroelectronics STW20NM50FD_Jun2002.pdf Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+664.68 грн
30+374.87 грн
120+316.76 грн
510+266.80 грн
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STW45NM50FD STW45NM50FD STMicroelectronics en.CD00002477.pdf Description: MOSFET N-CH 500V 45A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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STP4NB50 STP4NB50 STMicroelectronics STP4NB50_FP.pdf Description: MOSFET N-CH 500V 3.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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STTH6003CW STTH6003CW STMicroelectronics en.CD00001561.pdf description Description: DIODE ARRAY GP 300V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
на замовлення 837 шт:
термін постачання 21-31 дні (днів)
2+210.98 грн
30+122.15 грн
120+121.22 грн
510+113.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP12PF06 STP12PF06 STMicroelectronics STF12PF06%2CSTP12PF06pdf.pdf Description: MOSFET P-CH 60V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
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STPS16H100CG STPS16H100CG STMicroelectronics en.CD00002927.pdf Description: DIODE ARRAY SCHOTT 100V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 8 A
Current - Reverse Leakage @ Vr: 3.6 µA @ 100 V
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STPS160H100TV STPS160H100TV STMicroelectronics en.CD00001290.pdf Description: DIODE MOD SCHOTT 100V 80A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 80 A
Current - Reverse Leakage @ Vr: 40 µA @ 100 V
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
1+1728.16 грн
10+1202.73 грн
100+980.81 грн
В кошику  од. на суму  грн.
STPS80H100CY STPS80H100CY STMicroelectronics en.CD00001874.pdf Description: DIODE ARR SCHOTT 100V 40A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: MAX247™
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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STPS40H100CW STPS40H100CW STMicroelectronics en.CD00001671.pdf Description: DIODE ARR SCHOT 100V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 1715 шт:
термін постачання 21-31 дні (днів)
3+131.22 грн
30+79.81 грн
120+79.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STPS20H100CT STPS20H100CT STMicroelectronics en.CD00001292.pdf description Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
на замовлення 16675 шт:
термін постачання 21-31 дні (днів)
15+23.16 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
USB6B1 USB6B1 STMicroelectronics en.CD00001361.pdf Description: TVS DIODE 5.25VWM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Part Status: Obsolete
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BUZ10 BUZ10 STMicroelectronics BUZ10.pdf Description: MOSFET N-CH 50V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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STP80PF55 STP80PF55 STMicroelectronics en.CD00002632.pdf Description: MOSFET P-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товару немає в наявності
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STPS20150CT STPS20150CT STMicroelectronics en.CD00002411.pdf description Description: DIODE ARR SCHOTT 150V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
8+48.03 грн
50+28.06 грн
100+26.63 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
STPS10L25D STPS10L25D STMicroelectronics en.CD00000842.pdf Description: DIODE SCHOTTKY 25V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
на замовлення 1789 шт:
термін постачання 21-31 дні (днів)
5+83.19 грн
50+31.25 грн
100+30.79 грн
500+26.73 грн
1000+26.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STPS16150CT STPS16150CT STMicroelectronics en.CD00002410.pdf Description: DIODE ARRAY SCHOT 150V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
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BU941ZT BU941ZT STMicroelectronics en.CD00001247.pdf Description: TRANS NPN DARL 350V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
Grade: Automotive
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STPS16045TV STPS16045TV STMicroelectronics en.CD00000802.pdf Description: DIODE MOD SCHOTT 45V 80A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 575 шт:
термін постачання 21-31 дні (днів)
1+1742.74 грн
10+1213.30 грн
100+991.09 грн
В кошику  од. на суму  грн.
STTH3003CW STTH3003CW STMicroelectronics en.CD00001286.pdf Description: DIODE ARRAY GP 300V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
на замовлення 915 шт:
термін постачання 21-31 дні (днів)
2+222.13 грн
30+92.44 грн
120+90.15 грн
510+81.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STTH2003CT STTH2003CT STMicroelectronics en.CD00001289.pdf Description: DIODE ARRAY GP 300V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
на замовлення 52861 шт:
термін постачання 21-31 дні (днів)
8+45.46 грн
50+41.48 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
STTH8L06D STTH8L06D STMicroelectronics en.CD00002721.pdf Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
на замовлення 2573 шт:
термін постачання 21-31 дні (днів)
3+119.21 грн
50+54.21 грн
100+48.28 грн
500+35.54 грн
1000+32.39 грн
2000+29.75 грн
Мінімальне замовлення: 3
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STTH8R06D STTH8R06D STMicroelectronics en.CD00002378.pdf description Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
на замовлення 1993 шт:
термін постачання 21-31 дні (днів)
4+97.77 грн
50+36.74 грн
100+35.47 грн
500+29.24 грн
1000+27.92 грн
Мінімальне замовлення: 4
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STTH5R06D STTH5R06D STMicroelectronics en.CD00002497.pdf Description: DIODE GEN PURP 600V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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STPS1545CT STPS1545CT STMicroelectronics en.CD00004902.pdf Description: DIODE ARR SCHOTT 45V 7.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 964 шт:
термін постачання 21-31 дні (днів)
5+77.19 грн
50+24.50 грн
100+22.79 грн
500+20.51 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STPS15L45CB STPS15L45CB STMicroelectronics en.CD00002833.pdf Description: DIODE ARRAY SCHOTT 45V 7.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 3001 шт:
термін постачання 21-31 дні (днів)
17+20.58 грн
75+19.22 грн
150+19.18 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
STPS745D STPS745D STMicroelectronics en.CD00000822.pdf Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 3588 шт:
термін постачання 21-31 дні (днів)
6+61.75 грн
50+24.17 грн
100+22.17 грн
500+19.77 грн
1000+19.12 грн
2000+18.67 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
STPS2030CT STPS2030CT STMicroelectronics en.CD00002898.pdf Description: DIODE ARRAY SCHOTTKY 30V TO220AB
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
3+157.81 грн
10+136.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STPS3045CT STPS3045CT STMicroelectronics en.CD00000821.pdf Description: DIODE ARRAY SCHOT 45V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 2818 шт:
термін постачання 21-31 дні (днів)
4+100.34 грн
50+35.41 грн
100+34.21 грн
500+29.78 грн
1000+27.86 грн
2000+26.74 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STPS20L45CG STPS20L45CG STMicroelectronics en.CD00002518.pdf Description: DIODE ARR SCHOTT 45V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товару немає в наявності
В кошику  од. на суму  грн.
STPS1545D STPS1545D STMicroelectronics en.CD00000819.pdf Description: DIODE SCHOTTKY 45V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 244 шт:
термін постачання 21-31 дні (днів)
9+41.17 грн
50+24.46 грн
100+24.21 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
STPS1045D STPS1045D STMicroelectronics en.CD00000817.pdf description Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 3280 шт:
термін постачання 21-31 дні (днів)
11+31.73 грн
50+21.59 грн
100+20.85 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
STPS60L30CW STPS60L30CW STMicroelectronics en.CD00001857.pdf Description: DIODE ARR SCHOTT 30V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 30 A
Current - Reverse Leakage @ Vr: 4 mA @ 30 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
2+250.43 грн
30+99.24 грн
120+99.20 грн
510+89.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STPS30L30CT STPS30L30CT STMicroelectronics en.CD00001329.pdf Description: DIODE ARRAY SCHOT 30V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 60 V
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)
4+95.20 грн
50+41.56 грн
100+38.92 грн
500+36.44 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF630 IRF630 STMicroelectronics en.CD00000701.pdf description Description: MOSFET N-CH 200V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 7297 шт:
термін постачання 21-31 дні (днів)
3+157.81 грн
50+73.73 грн
100+66.10 грн
500+49.44 грн
1000+45.39 грн
2000+41.99 грн
5000+38.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF640 IRF640 STMicroelectronics en.CD00000702.pdf description Description: MOSFET N-CH 200V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
В кошику  од. на суму  грн.
STW45NM50 STW45NM50 STMicroelectronics en.CD00002789.pdf description Description: MOSFET N-CH 500V 45A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
1+1014.60 грн
30+533.69 грн
120+510.46 грн
В кошику  од. на суму  грн.
STP7NB60 STP7NB60 STMicroelectronics STP7NB60.pdf Description: MOSFET N-CH 600V 7.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP45NE06 STP45NE06 STMicroelectronics STP45NE06_FP.pdf Description: MOSFET N-CH 60V 45A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP20NE06L STP20NE06L STMicroelectronics STP20NE06L_FP.pdf Description: MOSFET N-CH 60V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP16NF06L STP16NF06L STMicroelectronics Description: MOSFET N-CH 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP16NF06 STP16NF06 STMicroelectronics en.CD00002501.pdf Description: MOSFET N-CH 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
на замовлення 2071 шт:
термін постачання 21-31 дні (днів)
3+124.36 грн
50+57.08 грн
100+50.94 грн
500+37.67 грн
1000+34.41 грн
2000+31.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VND10N06 VND10N06 STMicroelectronics VND10N06_-1_Rev4_Sep2013.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
STW45NM60 STW45NM60 STMicroelectronics en.CD00002682.pdf Description: MOSFET N-CH 650V 45A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 22.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
на замовлення 591 шт:
термін постачання 21-31 дні (днів)
1+821.63 грн
30+537.68 грн
120+519.86 грн
510+478.41 грн
В кошику  од. на суму  грн.
STP5NB60 STP5NB60 STMicroelectronics STP5NB60_FP.pdf Description: MOSFET N-CH 600V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP60NE06-16 STP60NE06-16 STMicroelectronics STP60NE06-16%28FP%29.pdf Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP20NM60FP STP20NM60FP STMicroelectronics en.CD00002505.pdf description Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
1+601.21 грн
50+314.71 грн
100+289.26 грн
500+233.89 грн
В кошику  од. на суму  грн.
STW13NB60 STW13NB60 STMicroelectronics STW13NB60.pdf Description: MOSFET N-CH 600V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 6.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP11NM60 STP11NM60 STMicroelectronics en.CD00005066.pdf Description: MOSFET N-CH 650V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 217 шт:
термін постачання 21-31 дні (днів)
1+381.65 грн
50+191.39 грн
100+174.38 грн
В кошику  од. на суму  грн.
STP80NF55-06 STP80NF55-06 STMicroelectronics en.CD00002670.pdf Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
2+201.55 грн
50+95.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STY60NM50 STY60NM50 STMicroelectronics en.CD00002391.pdf Description: MOSFET N-CH 500V 60A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
на замовлення 584 шт:
термін постачання 21-31 дні (днів)
1+1689.56 грн
30+1150.48 грн
В кошику  од. на суму  грн.
STE53NC50 STE53NC50 STMicroelectronics en.CD00002866.pdf Description: MOSFET N-CH 500V 53A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 27A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOTOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
1+3098.68 грн
10+2232.28 грн
100+2040.51 грн
В кошику  од. на суму  грн.
STP55NF06 STP55NF06 STMicroelectronics en.CD00002311.pdf description Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 28675 шт:
термін постачання 21-31 дні (днів)
3+156.09 грн
50+72.99 грн
100+65.41 грн
500+48.92 грн
1000+44.91 грн
2000+41.54 грн
5000+37.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP80NE06-10 STP80NE06-10 STMicroelectronics STP80NE06-10.pdf Description: MOSFET N-CH 60V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
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STP4NB80 STP4NB80 STMicroelectronics STP4NB80_FP.pdf Description: MOSFET N-CH 800V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
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STH15NB50FI STH15NB50FI STMicroelectronics STH15NB50FI%2C%20STW15NB50.pdf Description: MOSFET N-CH 500V 10.5A ISOWAT218
Packaging: Tube
Package / Case: ISOWATT-218-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOWATT-218
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
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STW9NK90Z STW9NK90Z STMicroelectronics en.CD00003327.pdf Description: MOSFET N-CH 900V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
на замовлення 437 шт:
термін постачання 21-31 дні (днів)
1+384.23 грн
30+207.93 грн
120+172.20 грн
В кошику  од. на суму  грн.
VIPER50A VIPER50_SP_A_ASP.pdf
VIPER50A
Виробник: STMicroelectronics
Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: Frequency Control, Soft Start, Sync
Part Status: Obsolete
Power (Watts): 50 W
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VIPER100 VIPER100_SP_A_ASP.pdf
VIPER100
Виробник: STMicroelectronics
Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: Pentawatt-5 HV (Bent and Staggered Leads)
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: EN, Frequency Control, Soft Start
Part Status: Obsolete
Power (Watts): 100 W
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VIPer50SP VIPER50_SP_A_ASP.pdf
VIPer50SP
Виробник: STMicroelectronics
Description: IC OFFLIN CONV FLBACK 5PENTAWATT
Packaging: Tube
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Frequency - Switching: Up to 200kHz
Internal Switch(s): Yes
Voltage - Breakdown: 620V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 15V
Supplier Device Package: 5-PENTAWATT
Fault Protection: Current Limiting, Over Temperature
Voltage - Start Up: 11 V
Control Features: Frequency Control, Soft Start, Sync
Part Status: Obsolete
Power (Watts): 50 W
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VB921ZVFI VB921ZVFI_SP.pdf
VB921ZVFI
Виробник: STMicroelectronics
Description: IC PWR DRVR BIPLR 1:1 ISOWATT220
Packaging: Tube
Package / Case: ISOWATT-220-3
Output Type: Bipolar
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 4.2V ~ 5.5V
Current - Output (Max): 7.5A
Ratio - Input:Output: 1:1
Supplier Device Package: ISOWATT-220
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STW20NM50FD STW20NM50FD_Jun2002.pdf
STW20NM50FD
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+664.68 грн
30+374.87 грн
120+316.76 грн
510+266.80 грн
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STW45NM50FD en.CD00002477.pdf
STW45NM50FD
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 45A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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STP4NB50 STP4NB50_FP.pdf
STP4NB50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 3.8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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STTH6003CW description en.CD00001561.pdf
STTH6003CW
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 300V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 60 µA @ 300 V
на замовлення 837 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+210.98 грн
30+122.15 грн
120+121.22 грн
510+113.14 грн
Мінімальне замовлення: 2
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STP12PF06 STF12PF06%2CSTP12PF06pdf.pdf
STP12PF06
Виробник: STMicroelectronics
Description: MOSFET P-CH 60V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
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STPS16H100CG en.CD00002927.pdf
STPS16H100CG
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 100V 8A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 8 A
Current - Reverse Leakage @ Vr: 3.6 µA @ 100 V
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STPS160H100TV en.CD00001290.pdf
STPS160H100TV
Виробник: STMicroelectronics
Description: DIODE MOD SCHOTT 100V 80A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 80 A
Current - Reverse Leakage @ Vr: 40 µA @ 100 V
на замовлення 336 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1728.16 грн
10+1202.73 грн
100+980.81 грн
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STPS80H100CY en.CD00001874.pdf
STPS80H100CY
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 40A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: MAX247™
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 40 A
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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STPS40H100CW en.CD00001671.pdf
STPS40H100CW
Виробник: STMicroelectronics
Description: DIODE ARR SCHOT 100V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 1715 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+131.22 грн
30+79.81 грн
120+79.04 грн
Мінімальне замовлення: 3
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STPS20H100CT description en.CD00001292.pdf
STPS20H100CT
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
на замовлення 16675 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+23.16 грн
Мінімальне замовлення: 15
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USB6B1 en.CD00001361.pdf
USB6B1
Виробник: STMicroelectronics
Description: TVS DIODE 5.25VWM 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5.25V
Supplier Device Package: 8-SOIC
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 500W
Power Line Protection: Yes
Part Status: Obsolete
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BUZ10 BUZ10.pdf
BUZ10
Виробник: STMicroelectronics
Description: MOSFET N-CH 50V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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STP80PF55 en.CD00002632.pdf
STP80PF55
Виробник: STMicroelectronics
Description: MOSFET P-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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STPS20150CT description en.CD00002411.pdf
STPS20150CT
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 150V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+48.03 грн
50+28.06 грн
100+26.63 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
STPS10L25D en.CD00000842.pdf
STPS10L25D
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 25V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
на замовлення 1789 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+83.19 грн
50+31.25 грн
100+30.79 грн
500+26.73 грн
1000+26.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STPS16150CT en.CD00002410.pdf
STPS16150CT
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 150V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 3 µA @ 150 V
товару немає в наявності
В кошику  од. на суму  грн.
BU941ZT en.CD00001247.pdf
BU941ZT
Виробник: STMicroelectronics
Description: TRANS NPN DARL 350V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 250mA, 10A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
STPS16045TV en.CD00000802.pdf
STPS16045TV
Виробник: STMicroelectronics
Description: DIODE MOD SCHOTT 45V 80A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 80A
Supplier Device Package: ISOTOP®
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 80 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 575 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1742.74 грн
10+1213.30 грн
100+991.09 грн
В кошику  од. на суму  грн.
STTH3003CW en.CD00001286.pdf
STTH3003CW
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 300V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
на замовлення 915 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+222.13 грн
30+92.44 грн
120+90.15 грн
510+81.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STTH2003CT en.CD00001289.pdf
STTH2003CT
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 300V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 300 V
на замовлення 52861 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.46 грн
50+41.48 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
STTH8L06D en.CD00002721.pdf
STTH8L06D
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 105 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 8 µA @ 600 V
на замовлення 2573 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.21 грн
50+54.21 грн
100+48.28 грн
500+35.54 грн
1000+32.39 грн
2000+29.75 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STTH8R06D description en.CD00002378.pdf
STTH8R06D
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
на замовлення 1993 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.77 грн
50+36.74 грн
100+35.47 грн
500+29.24 грн
1000+27.92 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STTH5R06D en.CD00002497.pdf
STTH5R06D
Виробник: STMicroelectronics
Description: DIODE GEN PURP 600V 5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
товару немає в наявності
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STPS1545CT en.CD00004902.pdf
STPS1545CT
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 45V 7.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 964 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.19 грн
50+24.50 грн
100+22.79 грн
500+20.51 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STPS15L45CB en.CD00002833.pdf
STPS15L45CB
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 45V 7.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: DPAK
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 3001 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+20.58 грн
75+19.22 грн
150+19.18 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
STPS745D en.CD00000822.pdf
STPS745D
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 45V 7.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 3588 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.75 грн
50+24.17 грн
100+22.17 грн
500+19.77 грн
1000+19.12 грн
2000+18.67 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
STPS2030CT en.CD00002898.pdf
STPS2030CT
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 30V TO220AB
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+157.81 грн
10+136.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STPS3045CT en.CD00000821.pdf
STPS3045CT
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 45V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 200°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 2818 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.34 грн
50+35.41 грн
100+34.21 грн
500+29.78 грн
1000+27.86 грн
2000+26.74 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STPS20L45CG en.CD00002518.pdf
STPS20L45CG
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 45V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товару немає в наявності
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STPS1545D en.CD00000819.pdf
STPS1545D
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 45V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 244 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+41.17 грн
50+24.46 грн
100+24.21 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
STPS1045D description en.CD00000817.pdf
STPS1045D
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
на замовлення 3280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.73 грн
50+21.59 грн
100+20.85 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
STPS60L30CW en.CD00001857.pdf
STPS60L30CW
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 30V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 30 A
Current - Reverse Leakage @ Vr: 4 mA @ 30 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+250.43 грн
30+99.24 грн
120+99.20 грн
510+89.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STPS30L30CT en.CD00001329.pdf
STPS30L30CT
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 30V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 60 V
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.20 грн
50+41.56 грн
100+38.92 грн
500+36.44 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRF630 description en.CD00000701.pdf
IRF630
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 7297 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+157.81 грн
50+73.73 грн
100+66.10 грн
500+49.44 грн
1000+45.39 грн
2000+41.99 грн
5000+38.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF640 description en.CD00000702.pdf
IRF640
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
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STW45NM50 description en.CD00002789.pdf
STW45NM50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 45A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 22.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1014.60 грн
30+533.69 грн
120+510.46 грн
В кошику  од. на суму  грн.
STP7NB60 STP7NB60.pdf
STP7NB60
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 25 V
товару немає в наявності
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STP45NE06 STP45NE06_FP.pdf
STP45NE06
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 45A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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STP20NE06L STP20NE06L_FP.pdf
STP20NE06L
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товару немає в наявності
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STP16NF06L
STP16NF06L
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
товару немає в наявності
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STP16NF06 en.CD00002501.pdf
STP16NF06
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
на замовлення 2071 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.36 грн
50+57.08 грн
100+50.94 грн
500+37.67 грн
1000+34.41 грн
2000+31.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VND10N06 VND10N06_-1_Rev4_Sep2013.pdf
VND10N06
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: DPAK
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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STW45NM60 en.CD00002682.pdf
STW45NM60
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 45A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 22.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
на замовлення 591 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+821.63 грн
30+537.68 грн
120+519.86 грн
510+478.41 грн
В кошику  од. на суму  грн.
STP5NB60 STP5NB60_FP.pdf
STP5NB60
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 25 V
товару немає в наявності
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STP60NE06-16 STP60NE06-16%28FP%29.pdf
STP60NE06-16
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V
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STP20NM60FP description en.CD00002505.pdf
STP20NM60FP
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
на замовлення 634 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+601.21 грн
50+314.71 грн
100+289.26 грн
500+233.89 грн
В кошику  од. на суму  грн.
STW13NB60 STW13NB60.pdf
STW13NB60
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 6.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
товару немає в наявності
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STP11NM60 en.CD00005066.pdf
STP11NM60
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 217 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+381.65 грн
50+191.39 грн
100+174.38 грн
В кошику  од. на суму  грн.
STP80NF55-06 en.CD00002670.pdf
STP80NF55-06
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
на замовлення 76 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+201.55 грн
50+95.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STY60NM50 en.CD00002391.pdf
STY60NM50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 60A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
на замовлення 584 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1689.56 грн
30+1150.48 грн
В кошику  од. на суму  грн.
STE53NC50 en.CD00002866.pdf
STE53NC50
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 53A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 27A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOTOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3098.68 грн
10+2232.28 грн
100+2040.51 грн
В кошику  од. на суму  грн.
STP55NF06 description en.CD00002311.pdf
STP55NF06
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 27.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 28675 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+156.09 грн
50+72.99 грн
100+65.41 грн
500+48.92 грн
1000+44.91 грн
2000+41.54 грн
5000+37.60 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP80NE06-10 STP80NE06-10.pdf
STP80NE06-10
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
товару немає в наявності
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STP4NB80 STP4NB80_FP.pdf
STP4NB80
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
товару немає в наявності
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STH15NB50FI STH15NB50FI%2C%20STW15NB50.pdf
STH15NB50FI
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 10.5A ISOWAT218
Packaging: Tube
Package / Case: ISOWATT-218-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOWATT-218
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
товару немає в наявності
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STW9NK90Z en.CD00003327.pdf
STW9NK90Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 900V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
на замовлення 437 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+384.23 грн
30+207.93 грн
120+172.20 грн
В кошику  од. на суму  грн.
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