Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (129448) > Сторінка 334 з 2158
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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FERD30M45CT | STMicroelectronics |
 Description: DIODE ARRAY FERD 45V 15A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: FERD (Field Effect Rectifier Diode) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A Current - Reverse Leakage @ Vr: 600 µA @ 45 V |
на замовлення 659 шт: термін постачання 21-31 дні (днів) |
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STN2580 | STMicroelectronics |
Description: TRANS NPN 400V 1A SOT-223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.6 W |
на замовлення 13687 шт: термін постачання 21-31 дні (днів) |
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ESDALCL5-1BM2 | STMicroelectronics |
Description: TVS DIODE 3VWM SOD882 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 26pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOD-882 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active |
на замовлення 32575 шт: термін постачання 21-31 дні (днів) |
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ESDALCL6-2SC6 | STMicroelectronics |
Description: TVS DIODE 3VWM 17VC SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOT-23-6 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 17V Power Line Protection: Yes Part Status: Active |
на замовлення 12870 шт: термін постачання 21-31 дні (днів) |
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ESDALCL6-4P6A | STMicroelectronics |
Description: TVS DIODE 3VWM SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 2.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: SOT-666 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Power - Peak Pulse: 90W Power Line Protection: Yes Part Status: Active |
на замовлення 2029 шт: термін постачання 21-31 дні (днів) |
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STL57N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT Packaging: Cut Tape (CT) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 189W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
на замовлення 6212 шт: термін постачання 21-31 дні (днів) |
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STL57N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 189W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| STM3240G-JAVA | STMicroelectronics |
Description: STM32F407IGH6 EVAL BRD Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: STM32F407IGH6 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STM32-JAVA | STMicroelectronics |
Description: KIT EVAL FOR STM32 JAVA Packaging: Bulk For Use With/Related Products: STM32 Type: Integrated Development Environment (IDE) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F4DIS-BB | STMicroelectronics |
Description: BOARD BASE STM32F4 DISCOVERY Utilized IC / Part: STM32 F4 Series Part Status: Obsolete Accessory Type: Interface Board For Use With/Related Products: STM32 F4 Series Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F4DIS-CAM | STMicroelectronics |
Description: BOARD CAMERA STM32F4 DISCOVERY Part Status: Obsolete Accessory Type: Camera For Use With/Related Products: STM32 Packaging: Bulk Utilized IC / Part: STM32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F4DIS-LCD | STMicroelectronics |
Description: BOARD LCD STM32F4 DISCOVERY Part Status: Obsolete Accessory Type: LCD Display For Use With/Related Products: STM32 Packaging: Bulk Utilized IC / Part: STM32 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP100N10F7 | STMicroelectronics |
Description: MOSFET N CH 100V 80A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V |
на замовлення 1185 шт: термін постачання 21-31 дні (днів) |
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STP77N6F6 | STMicroelectronics |
Description: MOSFET N-CH 60V 77A TO220 Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 38.5A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 1566 шт: термін постачання 21-31 дні (днів) |
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STD100N10F7 | STMicroelectronics |
Description: MOSFET N CH 100V 80A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V |
на замовлення 3789 шт: термін постачання 21-31 дні (днів) |
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STD100N10F7 | STMicroelectronics |
Description: MOSFET N CH 100V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STH110N10F7-2 | STMicroelectronics |
Description: MOSFET N CH 100V 110A H2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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STP110N10F7 | STMicroelectronics |
Description: MOSFET N CH 100V 110A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 55A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V |
на замовлення 699 шт: термін постачання 21-31 дні (днів) |
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STP110N55F6 | STMicroelectronics |
Description: MOSFET N-CH 55V 110A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP80N70F6 | STMicroelectronics |
Description: MOSFET N-CH 68V 96A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 68 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-MKI127V1 | STMicroelectronics |
Description: BOARD EVAL FOR L3GD20 Packaging: Box Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s Interface: I2C, Serial, SPI Sensor Type: Gyroscope, 3 Axis Utilized IC / Part: L3GD20 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP24N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 18A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V |
на замовлення 994 шт: термін постачання 21-31 дні (днів) |
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STEVAL-ILD004V1 | STMicroelectronics |
Description: BOARD EVAL FOR TS820 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STC3115IJT | STMicroelectronics |
Description: IC BATT GAS GAUGE LI-ION 10CSP Packaging: Cut Tape (CT) Package / Case: 10-WFBGA, CSPBGA Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-CSP (1.4x2.04) Part Status: Active |
на замовлення 7821 шт: термін постачання 21-31 дні (днів) |
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STC3115IJT | STMicroelectronics |
Description: IC BATT GAS GAUGE LI-ION 10CSP Packaging: Tape & Reel (TR) Package / Case: 10-WFBGA, CSPBGA Mounting Type: Surface Mount Function: Battery Monitor Interface: I2C Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-CSP (1.4x2.04) Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SPC560D40L1C4E0X | STMicroelectronics |
Description: IC MCU 32BIT 256KB FLASH 64LQFP Qualification: AEC-Q100 DigiKey Programmable: Not Verified Number of I/O: 45 Grade: Automotive Supplier Device Package: 64-LQFP (10x10) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x12b Core Processor: e200z0h Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 16K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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SPC560P40L1CEFAR | STMicroelectronics |
Description: IC MCU 32BIT 256KB FLASH 64LQFP Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 20K x 8 Program Memory Size: 256KB (256K x 8) Speed: 64MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tape & Reel (TR) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Number of I/O: 37 Grade: Automotive Supplier Device Package: 64-LQFP (10x10) Peripherals: DMA, POR, PWM, WDT Connectivity: CANbus, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x10b Core Processor: e200z0h |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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SPC560B64L7C6E0X | STMicroelectronics |
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP RAM Size: 96K x 8 Program Memory Size: 1.5MB (1.5M x 8) Speed: 64MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 53x10/12b Core Processor: e200z0h Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) DigiKey Programmable: Not Verified Number of I/O: 149 Supplier Device Package: 176-LQFP (24x24) |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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SPC560B60L5C6E0X | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 144LQFP Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Number of I/O: 121 Supplier Device Package: 144-LQFP (20x20) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 53x10/12b Core Processor: e200z0h Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 80K x 8 Program Memory Size: 1MB (1M x 8) Speed: 64MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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SPC560B64L5C6E0X | STMicroelectronics |
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 1.5MB (1.5M x 8) RAM Size: 96K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z0h Data Converters: A/D 53x10/12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Grade: Automotive Number of I/O: 121 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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SPC56EL60L5CBFSY | STMicroelectronics |
Description: IC MCU 32BIT 1MB FLASH 144LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SPC5-HTCOMP-NLTL | STMicroelectronics | Description: HIGHTEC COMPILER FOR SPC56 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SPC560D40L1C4E0X | STMicroelectronics |
Description: IC MCU 32BIT 256KB FLASH 64LQFP Packaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z0h Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Grade: Automotive Number of I/O: 45 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SPC560P40L1CEFAR | STMicroelectronics |
Description: IC MCU 32BIT 256KB FLASH 64LQFP Packaging: Cut Tape (CT) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 64MHz Program Memory Size: 256KB (256K x 8) RAM Size: 20K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z0h Data Converters: A/D 16x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Grade: Automotive Number of I/O: 37 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SPC56EL70L5CBFR | STMicroelectronics |
Description: IC MCU 32BIT 2MB FLASH 144LQFP Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 2MB (2M x 8) RAM Size: 192K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: e200z4d Data Converters: A/D 32x12b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V Connectivity: CANbus, LINbus, SCI, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Grade: Automotive Number of I/O: 96 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-MKI129V3 | STMicroelectronics |
Description: COUPON BOARD MP34DT01 Contents: Board(s) Part Status: Obsolete Primary Attributes: Digital Output Supplied Contents: Board(s) Utilized IC / Part: MP34DT01 Type: Audio Function: Microphone Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-SPBT2ATV3 | STMicroelectronics |
Description: BOARD EVAL FOR SPBT2532C2.AT2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-MKI129V2 | STMicroelectronics |
Description: BOARD EVAL FOR MP34DB01 Part Status: Obsolete Primary Attributes: Digital Output Supplied Contents: Board(s) Utilized IC / Part: MP34DB01 Type: Audio Function: MEMS Omnidirectional Microphones Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-MKI129V1 | STMicroelectronics |
Description: COUPON BOARD MP45DT02 Packaging: Bulk Function: Microphone Type: Audio Contents: Board(s) Utilized IC / Part: MP45DT02 Supplied Contents: Board(s) Primary Attributes: Digital Output |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP105N3LL | STMicroelectronics |
Description: MOSFET N-CH 30V 80A TO220 Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
на замовлення 186 шт: термін постачання 21-31 дні (днів) |
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STT6N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 6A SOT23-6 Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 6149 шт: термін постачання 21-31 дні (днів) |
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STT6N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 6A SOT23-6 Part Status: Active Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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STH310N10F7-2 | STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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STH310N10F7-2 | STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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STTH30S06W | STMicroelectronics |
Description: DIODE STANDARD 600V 30A Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 30A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STU6N65K3 | STMicroelectronics |
Description: MOSFET N-CH 650V 5.4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-251 (IPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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STW46NF30 | STMicroelectronics |
Description: MOSFET N-CH 300V 42A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
на замовлення 1030 шт: термін постачання 21-31 дні (днів) |
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STWA45N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 35A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STB24N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 18A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V |
на замовлення 350 шт: термін постачання 21-31 дні (днів) |
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STD80N4F6 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4989 шт: термін постачання 21-31 дні (днів) |
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STGF30H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO-220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/160ns Switching Energy: 350µJ (on), 400µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 105 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 37 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGP20H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 40A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42.5ns/177ns Switching Energy: 209µJ (on), 261µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 115 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
на замовлення 746 шт: термін постачання 21-31 дні (днів) |
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STGP30H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/160ns Switching Energy: 350µJ (on), 400µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 105 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGP35HF60W | STMicroelectronics |
Description: IGBT 600V 60A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 30ns/175ns Switching Energy: 290µJ (on), 185µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 200 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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STP240N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 180A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V |
на замовлення 8461 шт: термін постачання 21-31 дні (днів) |
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STP7N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V |
на замовлення 688 шт: термін постачання 21-31 дні (днів) |
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STP9NM40N | STMicroelectronics |
Description: MOSFET N-CH 400V 5.6A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LET9070CB | STMicroelectronics |
Description: RF MOSFET LDMOS 28V M243 Packaging: Box Package / Case: M243 Current Rating (Amps): 12A Frequency: 945MHz Power - Output: 80W Gain: 16dB Technology: LDMOS Supplier Device Package: M243 Voltage - Rated: 80 V Voltage - Test: 28 V Current - Test: 400 mA |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||
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STAC2933 | STMicroelectronics |
Description: RF MOSFET 50V STAC177B Packaging: Box Package / Case: STAC177B Current Rating (Amps): 40A Frequency: 30MHz Configuration: N-Channel Power - Output: 400W Gain: 23.5dB Technology: MOSFET (Metal Oxide) Supplier Device Package: STAC177B Voltage - Rated: 130 V Voltage - Test: 50 V Current - Test: 250 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STAC2943 | STMicroelectronics |
Description: RF MOSFET 50V STAC177B Packaging: Box Package / Case: STAC177B Current Rating (Amps): 40A Frequency: 30MHz Configuration: N-Channel Power - Output: 350W Gain: 25dB Technology: MOSFET (Metal Oxide) Supplier Device Package: STAC177B Voltage - Rated: 130 V Voltage - Test: 50 V Current - Test: 250 mA |
товару немає в наявності |
В кошику од. на суму грн. |
| FERD30M45CT |
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Виробник: STMicroelectronics
Description: DIODE ARRAY FERD 45V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
Description: DIODE ARRAY FERD 45V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
на замовлення 659 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.24 грн |
| 50+ | 36.34 грн |
| STN2580 |
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Виробник: STMicroelectronics
Description: TRANS NPN 400V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.6 W
Description: TRANS NPN 400V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.6 W
на замовлення 13687 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.02 грн |
| 10+ | 33.06 грн |
| 100+ | 21.29 грн |
| 500+ | 15.24 грн |
| ESDALCL5-1BM2 |
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Виробник: STMicroelectronics
Description: TVS DIODE 3VWM SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3VWM SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 26pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
на замовлення 32575 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.57 грн |
| 20+ | 15.00 грн |
| 100+ | 9.42 грн |
| 500+ | 6.57 грн |
| 1000+ | 5.84 грн |
| 2000+ | 5.22 грн |
| 5000+ | 4.48 грн |
| ESDALCL6-2SC6 |
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Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 17VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 3VWM 17VC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Part Status: Active
на замовлення 12870 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 20.92 грн |
| 26+ | 11.49 грн |
| 100+ | 8.45 грн |
| 500+ | 7.09 грн |
| 1000+ | 5.95 грн |
| ESDALCL6-4P6A |
|
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 90W
Power Line Protection: Yes
Part Status: Active
Description: TVS DIODE 3VWM SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-666
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 90W
Power Line Protection: Yes
Part Status: Active
на замовлення 2029 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.27 грн |
| 32+ | 9.63 грн |
| 100+ | 8.68 грн |
| 500+ | 8.08 грн |
| 1000+ | 8.01 грн |
| STL57N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
на замовлення 6212 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 873.32 грн |
| 10+ | 584.88 грн |
| 100+ | 468.56 грн |
| STL57N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Description: MOSFET N-CH 650V 4.3A 8POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 189W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 397.53 грн |
| STM3240G-JAVA |
|
Виробник: STMicroelectronics
Description: STM32F407IGH6 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F407IGH6
Part Status: Obsolete
Description: STM32F407IGH6 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F407IGH6
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| STM32-JAVA |
|
Виробник: STMicroelectronics
Description: KIT EVAL FOR STM32 JAVA
Packaging: Bulk
For Use With/Related Products: STM32
Type: Integrated Development Environment (IDE)
Description: KIT EVAL FOR STM32 JAVA
Packaging: Bulk
For Use With/Related Products: STM32
Type: Integrated Development Environment (IDE)
товару немає в наявності
В кошику
од. на суму грн.
| STM32F4DIS-BB |
|
Виробник: STMicroelectronics
Description: BOARD BASE STM32F4 DISCOVERY
Utilized IC / Part: STM32 F4 Series
Part Status: Obsolete
Accessory Type: Interface Board
For Use With/Related Products: STM32 F4 Series
Packaging: Bulk
Description: BOARD BASE STM32F4 DISCOVERY
Utilized IC / Part: STM32 F4 Series
Part Status: Obsolete
Accessory Type: Interface Board
For Use With/Related Products: STM32 F4 Series
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| STM32F4DIS-CAM |
|
Виробник: STMicroelectronics
Description: BOARD CAMERA STM32F4 DISCOVERY
Part Status: Obsolete
Accessory Type: Camera
For Use With/Related Products: STM32
Packaging: Bulk
Utilized IC / Part: STM32
Description: BOARD CAMERA STM32F4 DISCOVERY
Part Status: Obsolete
Accessory Type: Camera
For Use With/Related Products: STM32
Packaging: Bulk
Utilized IC / Part: STM32
товару немає в наявності
В кошику
од. на суму грн.
| STM32F4DIS-LCD |
|
Виробник: STMicroelectronics
Description: BOARD LCD STM32F4 DISCOVERY
Part Status: Obsolete
Accessory Type: LCD Display
For Use With/Related Products: STM32
Packaging: Bulk
Utilized IC / Part: STM32
Description: BOARD LCD STM32F4 DISCOVERY
Part Status: Obsolete
Accessory Type: LCD Display
For Use With/Related Products: STM32
Packaging: Bulk
Utilized IC / Part: STM32
товару немає в наявності
В кошику
од. на суму грн.
| STP100N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N CH 100V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Description: MOSFET N CH 100V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
на замовлення 1185 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.40 грн |
| 50+ | 90.62 грн |
| 100+ | 81.55 грн |
| 500+ | 61.60 грн |
| 1000+ | 56.80 грн |
| STP77N6F6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 77A TO220
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 38.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 77A TO220
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 38.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1566 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.56 грн |
| 10+ | 93.57 грн |
| 100+ | 72.81 грн |
| 500+ | 57.91 грн |
| 1000+ | 47.18 грн |
| STD100N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N CH 100V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Description: MOSFET N CH 100V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
на замовлення 3789 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 213.10 грн |
| 10+ | 132.97 грн |
| 100+ | 91.77 грн |
| 500+ | 69.59 грн |
| 1000+ | 66.72 грн |
| STD100N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N CH 100V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Description: MOSFET N CH 100V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 64.77 грн |
| STH110N10F7-2 |
|
Виробник: STMicroelectronics
Description: MOSFET N CH 100V 110A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Description: MOSFET N CH 100V 110A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STP110N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N CH 100V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
Description: MOSFET N CH 100V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
на замовлення 699 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 237.12 грн |
| 50+ | 114.36 грн |
| 100+ | 103.30 грн |
| 500+ | 78.71 грн |
| STP110N55F6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 25 V
Description: MOSFET N-CH 55V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| STP80N70F6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 68V 96A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Description: MOSFET N-CH 68V 96A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STEVAL-MKI127V1 |
|
Виробник: STMicroelectronics
Description: BOARD EVAL FOR L3GD20
Packaging: Box
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Active
Description: BOARD EVAL FOR L3GD20
Packaging: Box
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Active
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| STP24N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Description: MOSFET N-CH 600V 18A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
на замовлення 994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 270.44 грн |
| 50+ | 131.75 грн |
| 100+ | 119.29 грн |
| 500+ | 91.45 грн |
| STEVAL-ILD004V1 |
|
Виробник: STMicroelectronics
Description: BOARD EVAL FOR TS820
Description: BOARD EVAL FOR TS820
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| STC3115IJT |
|
Виробник: STMicroelectronics
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Cut Tape (CT)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
на замовлення 7821 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.16 грн |
| 10+ | 96.71 грн |
| 25+ | 88.02 грн |
| 100+ | 73.61 грн |
| 250+ | 69.33 грн |
| 500+ | 66.75 грн |
| 1000+ | 63.56 грн |
| 2500+ | 61.36 грн |
| STC3115IJT |
|
Виробник: STMicroelectronics
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
Description: IC BATT GAS GAUGE LI-ION 10CSP
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA, CSPBGA
Mounting Type: Surface Mount
Function: Battery Monitor
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-CSP (1.4x2.04)
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 67.53 грн |
| SPC560D40L1C4E0X |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 45
Grade: Automotive
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 45
Grade: Automotive
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SPC560P40L1CEFAR |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 37
Grade: Automotive
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b
Core Processor: e200z0h
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 20K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 37
Grade: Automotive
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, POR, PWM, WDT
Connectivity: CANbus, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b
Core Processor: e200z0h
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| SPC560B64L7C6E0X |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
RAM Size: 96K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 53x10/12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
DigiKey Programmable: Not Verified
Number of I/O: 149
Supplier Device Package: 176-LQFP (24x24)
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
RAM Size: 96K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 53x10/12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
DigiKey Programmable: Not Verified
Number of I/O: 149
Supplier Device Package: 176-LQFP (24x24)
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| SPC560B60L5C6E0X |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 121
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 53x10/12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 80K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Number of I/O: 121
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 53x10/12b
Core Processor: e200z0h
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 80K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 64MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| SPC560B64L5C6E0X |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 121
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 53x10/12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 121
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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Мінімальне замовлення: 500 шт
В кошику
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| SPC56EL60L5CBFSY |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Description: IC MCU 32BIT 1MB FLASH 144LQFP
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| SPC5-HTCOMP-NLTL |
Виробник: STMicroelectronics
Description: HIGHTEC COMPILER FOR SPC56
Description: HIGHTEC COMPILER FOR SPC56
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| SPC560D40L1C4E0X |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 45
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 45
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| SPC560P40L1CEFAR |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z0h
Data Converters: A/D 16x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Grade: Automotive
Number of I/O: 37
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| SPC56EL70L5CBFR |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 96
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: e200z4d
Data Converters: A/D 32x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 3.63V
Connectivity: CANbus, LINbus, SCI, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Grade: Automotive
Number of I/O: 96
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| STEVAL-MKI129V3 |
|
Виробник: STMicroelectronics
Description: COUPON BOARD MP34DT01
Contents: Board(s)
Part Status: Obsolete
Primary Attributes: Digital Output
Supplied Contents: Board(s)
Utilized IC / Part: MP34DT01
Type: Audio
Function: Microphone
Packaging: Bulk
Description: COUPON BOARD MP34DT01
Contents: Board(s)
Part Status: Obsolete
Primary Attributes: Digital Output
Supplied Contents: Board(s)
Utilized IC / Part: MP34DT01
Type: Audio
Function: Microphone
Packaging: Bulk
товару немає в наявності
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од. на суму грн.
| STEVAL-SPBT2ATV3 |
|
Виробник: STMicroelectronics
Description: BOARD EVAL FOR SPBT2532C2.AT2
Description: BOARD EVAL FOR SPBT2532C2.AT2
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| STEVAL-MKI129V2 |
|
Виробник: STMicroelectronics
Description: BOARD EVAL FOR MP34DB01
Part Status: Obsolete
Primary Attributes: Digital Output
Supplied Contents: Board(s)
Utilized IC / Part: MP34DB01
Type: Audio
Function: MEMS Omnidirectional Microphones
Packaging: Bulk
Description: BOARD EVAL FOR MP34DB01
Part Status: Obsolete
Primary Attributes: Digital Output
Supplied Contents: Board(s)
Utilized IC / Part: MP34DB01
Type: Audio
Function: MEMS Omnidirectional Microphones
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-MKI129V1 |
|
Виробник: STMicroelectronics
Description: COUPON BOARD MP45DT02
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: MP45DT02
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Description: COUPON BOARD MP45DT02
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: MP45DT02
Supplied Contents: Board(s)
Primary Attributes: Digital Output
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| STP105N3LL |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A TO220
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: MOSFET N-CH 30V 80A TO220
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.34 грн |
| 50+ | 54.61 грн |
| 100+ | 48.70 грн |
| STT6N3LLH6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 6A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 6A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 6149 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.79 грн |
| 10+ | 36.56 грн |
| 100+ | 24.07 грн |
| 500+ | 17.33 грн |
| 1000+ | 15.64 грн |
| STT6N3LLH6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 6A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 30V 6A SOT23-6
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.93 грн |
| 6000+ | 13.23 грн |
| STH310N10F7-2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STH310N10F7-2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 447.90 грн |
| 10+ | 289.08 грн |
| 100+ | 208.66 грн |
| STTH30S06W |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 30A
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE STANDARD 600V 30A
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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| STU6N65K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Description: MOSFET N-CH 650V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STW46NF30 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 300V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 300V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 285.17 грн |
| 30+ | 151.83 грн |
| 120+ | 124.70 грн |
| 510+ | 98.35 грн |
| 1020+ | 91.54 грн |
| STWA45N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
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од. на суму грн.
| STB24N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 256.49 грн |
| 10+ | 161.70 грн |
| 100+ | 112.81 грн |
| STD80N4F6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.09 грн |
| 10+ | 52.68 грн |
| 100+ | 48.59 грн |
| STGF30H60DF |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 37 W
Description: IGBT TRENCH FS 600V 60A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 37 W
товару немає в наявності
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од. на суму грн.
| STGP20H60DF |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
на замовлення 746 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 158.08 грн |
| 50+ | 74.59 грн |
| 100+ | 66.99 грн |
| 500+ | 50.36 грн |
| STGP30H60DF |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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| STGP35HF60W |
Виробник: STMicroelectronics
Description: IGBT 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
Description: IGBT 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| STP240N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 8461 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 336.31 грн |
| 50+ | 168.21 грн |
| 100+ | 153.19 грн |
| 500+ | 119.06 грн |
| 1000+ | 111.49 грн |
| STP7N80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
на замовлення 688 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.53 грн |
| 50+ | 89.44 грн |
| 100+ | 80.58 грн |
| 500+ | 61.05 грн |
| STP9NM40N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
Description: MOSFET N-CH 400V 5.6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
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| LET9070CB |
|
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 945MHz
Power - Output: 80W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 945MHz
Power - Output: 80W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
товару немає в наявності
Мінімальне замовлення: 50 шт
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| STAC2933 |
|
Виробник: STMicroelectronics
Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 400W
Gain: 23.5dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 400W
Gain: 23.5dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
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| STAC2943 |
|
Виробник: STMicroelectronics
Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 350W
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 350W
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
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