Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164781) > Сторінка 408 з 2747
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STM32F469I-DISCO | STMicroelectronics |
Description: DISCOVERY STM32F469 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: STM32F469 Platform: Discovery Part Status: Active |
на замовлення 128 шт: термін постачання 21-31 дні (днів) |
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STM32L073Z-EVAL | STMicroelectronics |
Description: STM32L073VZ EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M0+ Board Type: Evaluation Platform Utilized IC / Part: STM32L073VZ Part Status: Active |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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STEVAL-ISV020V1 | STMicroelectronics |
Description: EVAL BOARD FOR SPV1050Packaging: Box Function: Energy Harvesting Type: Power Management Utilized IC / Part: SPV1050 Supplied Contents: Board(s) Primary Attributes: Solar Powered Part Status: Active Contents: Board(s) Secondary Attributes: On-Board Test Points |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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STEVAL-ISV021V1 | STMicroelectronics |
Description: EVAL BOARD FOR SPV1050Packaging: Box Function: Energy Harvesting Type: Power Management Utilized IC / Part: SPV1050 Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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VN7040ASTR | STMicroelectronics |
Description: IC PWR DRIVER N-CHANNEL 1:1 8SOPackaging: Cut Tape (CT) Features: Auto Restart, Status Flag Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 24A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active |
на замовлення 3982 шт: термін постачання 21-31 дні (днів) |
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VN7050ASTR | STMicroelectronics |
Description: IC PWR DRIVER N-CHANNEL 1:1 8SOPackaging: Cut Tape (CT) Features: Auto Restart, Status Flag Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 21A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active |
на замовлення 16293 шт: термін постачання 21-31 дні (днів) |
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VN7140ASTR | STMicroelectronics |
Description: IC PWR DRIVER N-CHANNEL 1:1 8SOPackaging: Cut Tape (CT) Features: Auto Restart, Status Flag Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 140mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO |
на замовлення 35513 шт: термін постачання 21-31 дні (днів) |
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VNQ7140AJTR | STMicroelectronics |
Description: IC PWR DRVR N-CHAN 1:1 PWRSSO16Packaging: Cut Tape (CT) Features: Auto Restart, Status Flag Package / Case: 16-PowerLFSOP (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 140mOhm Input Type: Non-Inverting Voltage - Load: 4V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 8A Ratio - Input:Output: 1:1 Supplier Device Package: PowerSSO-16 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO |
на замовлення 8938 шт: термін постачання 21-31 дні (днів) |
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LSM6DS33TR | STMicroelectronics |
Description: IMU ACCEL/GYRO I2C/SPI 16LGA Packaging: Tape & Reel (TR) Package / Case: 16-VFLGA Module Output Type: I2C, SPI Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis Supplier Device Package: 16-LGA (3x3) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LIS2DE12TR | STMicroelectronics |
Description: ACCEL 2-16G I2C/SPI 12LGAPackaging: Tape & Reel (TR) Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor Package / Case: 12-VFLGA Output Type: I2C, SPI Mounting Type: Surface Mount Type: Digital Axis: X, Y, Z Acceleration Range: ±2g, 4g, 8g, 16g Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 3.6V Bandwidth: 0.5Hz ~ 2.69kHz Supplier Device Package: 12-LGA (2x2) Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g) Part Status: Active |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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TSX712IYST | STMicroelectronics |
Description: IC CMOS 2 CIRCUIT 8MINISOPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 660µA (x2 Channels) Slew Rate: 1.4V/µs Gain Bandwidth Product: 2.7 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 200 µV Supplier Device Package: 8-MiniSO Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 16 V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LIS2DE12TR | STMicroelectronics |
Description: ACCEL 2-16G I2C/SPI 12LGAPackaging: Cut Tape (CT) Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor Package / Case: 12-VFLGA Output Type: I2C, SPI Mounting Type: Surface Mount Type: Digital Axis: X, Y, Z Acceleration Range: ±2g, 4g, 8g, 16g Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 3.6V Bandwidth: 0.5Hz ~ 2.69kHz Supplier Device Package: 12-LGA (2x2) Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g) Part Status: Active |
на замовлення 33177 шт: термін постачання 21-31 дні (днів) |
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TSX712IYST | STMicroelectronics |
Description: IC CMOS 2 CIRCUIT 8MINISOPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 660µA (x2 Channels) Slew Rate: 1.4V/µs Gain Bandwidth Product: 2.7 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 200 µV Supplier Device Package: 8-MiniSO Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 16 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3890 шт: термін постачання 21-31 дні (днів) |
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TSV991AIQ1T | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 820µA Slew Rate: 10V/µs Gain Bandwidth Product: 20 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 1.5 mV Number of Circuits: 1 Current - Output / Channel: 35 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TS556IDTTR | STMicroelectronics |
Description: IC OSC TIMER DUAL 2.7MHZ 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 2.7MHz Type: 555 Type, Timer/Oscillator (Dual) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 16V Supplier Device Package: 14-SO Part Status: Active Current - Supply: 130 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TSV991AIQ1T | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Current - Supply: 820µA Slew Rate: 10V/µs Gain Bandwidth Product: 20 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 1.5 mV Number of Circuits: 1 Current - Output / Channel: 35 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 1894 шт: термін постачання 21-31 дні (днів) |
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TS556IDTTR | STMicroelectronics |
Description: IC OSC TIMER DUAL 2.7MHZ 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 2.7MHz Type: 555 Type, Timer/Oscillator (Dual) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 16V Supplier Device Package: 14-SO Part Status: Active Current - Supply: 130 µA |
на замовлення 3958 шт: термін постачання 21-31 дні (днів) |
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X-NUCLEO-PLC01A1 | STMicroelectronics |
Description: NUCLEO BOARD PLC GPIOPackaging: Box Function: GPIO Type: Interface Contents: Board(s) Utilized IC / Part: CLT01-38SQ7, VNI8200XP Platform: Nucleo Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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STD110N8F6 | STMicroelectronics |
Description: MOSFET N-CH 80V 80A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V |
на замовлення 1411 шт: термін постачання 21-31 дні (днів) |
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STD36P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 36A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
на замовлення 3405 шт: термін постачання 21-31 дні (днів) |
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STD4NK100Z | STMicroelectronics |
Description: MOSFET N-CH 1000V 2.2A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1243 шт: термін постачання 21-31 дні (днів) |
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STD9HN65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 5.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGB7H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 14A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 99µJ (on), 100µJ (off) Test Condition: 400V, 7A, 47Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 28 A Power - Max: 88 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL23NS3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 92A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL8P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tj) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
на замовлення 4861 шт: термін постачання 21-31 дні (днів) |
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STS7P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 7A POWER8-SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
на замовлення 4959 шт: термін постачання 21-31 дні (днів) |
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STD110N8F6 | STMicroelectronics |
Description: MOSFET N-CH 80V 80A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STD36P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 36A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STD4NK100Z | STMicroelectronics |
Description: MOSFET N-CH 1000V 2.2A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STD9HN65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 5.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGB7H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 14A TO-263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 99µJ (on), 100µJ (off) Test Condition: 400V, 7A, 47Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 28 A Power - Max: 88 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL110NS3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 120A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 14A, 10V Power Dissipation (Max): 4W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V |
товару немає в наявності |
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STL23NS3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 92A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL7N6LF3 | STMicroelectronics |
Description: MOSFET N-CH 60V 20A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V Power Dissipation (Max): 4.3W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 432 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STL8P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tj) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STS7P4LLF6 | STMicroelectronics |
Description: MOSFET P-CH 40V 7A POWER8-SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STD12N60M2 | STMicroelectronics |
Description: MOSFET N-CHANNEL 600V 9A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V |
на замовлення 7317 шт: термін постачання 21-31 дні (днів) |
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STH170N8F7-2 | STMicroelectronics |
Description: MOSFET N-CH 80V 120A H2PAK-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V |
на замовлення 1252 шт: термін постачання 21-31 дні (днів) |
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STL12N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 6.5A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL16N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 8A POWERFLAT HVPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 355mOhm @ 4A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 704 pF @ 100 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STL86N3LLH6AG | STMicroelectronics |
Description: MOSFET N-CH 30V 80A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V Power Dissipation (Max): 4W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STD12N60M2 | STMicroelectronics |
Description: MOSFET N-CHANNEL 600V 9A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STL12N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 6.5A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL86N3LLH6AG | STMicroelectronics |
Description: MOSFET N-CH 30V 80A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V Power Dissipation (Max): 4W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FERD20M60SR | STMicroelectronics |
Description: DIODE FERD 60V 20A I2PAKPackaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: FERD (Field Effect Rectifier Diode) Current - Average Rectified (Io): 20A Supplier Device Package: I2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 20 A Current - Reverse Leakage @ Vr: 230 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FERD40U50CFP | STMicroelectronics |
Description: DIODE ARR FERD 50V 20A TO220FPABPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: FERD (Field Effect Rectifier Diode) Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-220FPAB Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 20 A Current - Reverse Leakage @ Vr: 800 µA @ 50 V |
на замовлення 1189 шт: термін постачання 21-31 дні (днів) |
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STF12N120K5 | STMicroelectronics |
Description: MOSFET N-CH 1200V 12A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V |
на замовлення 1236 шт: термін постачання 21-31 дні (днів) |
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STTH80S06W | STMicroelectronics |
Description: DIODE STANDARD 600V 80A DO247Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 80A Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STW12N150K5 | STMicroelectronics |
Description: MOSFET N-CH 1500V 7A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V |
на замовлення 484 шт: термін постачання 21-31 дні (днів) |
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STW21N150K5 | STMicroelectronics |
Description: MOSFET N-CH 1500V 14A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3145 pF @ 100 V |
на замовлення 252 шт: термін постачання 21-31 дні (днів) |
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SM6T250CAY | STMicroelectronics |
Description: TVS DIODE 213VWM 344VC SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 1.75A Voltage - Reverse Standoff (Typ): 213V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 237V Voltage - Clamping (Max) @ Ipp: 344V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 49698 шт: термін постачання 21-31 дні (днів) |
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SM6T250CAY | STMicroelectronics |
Description: TVS DIODE 213VWM 344VC SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 1.75A Voltage - Reverse Standoff (Typ): 213V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 237V Voltage - Clamping (Max) @ Ipp: 344V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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STF12N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 9A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V |
на замовлення 815 шт: термін постачання 21-31 дні (днів) |
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STF16N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 12A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STF9HN65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 5.5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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STFI12N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 9A I2PAKFPPackaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STFI13N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 10A I2PAKFPPackaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGF7H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 14A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A Supplier Device Package: TO-220FP IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 99µJ (on), 100µJ (off) Test Condition: 400V, 7A, 47Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 28 A Power - Max: 24 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGP7H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 14A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 99µJ (on), 100µJ (off) Test Condition: 400V, 7A, 47Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 28 A Power - Max: 88 W |
на замовлення 1625 шт: термін постачання 21-31 дні (днів) |
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STP110N8F6 | STMicroelectronics |
Description: MOSFET N-CH 80V 110A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V |
на замовлення 466 шт: термін постачання 21-31 дні (днів) |
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| STM32F469I-DISCO |
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Виробник: STMicroelectronics
Description: DISCOVERY STM32F469 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F469
Platform: Discovery
Part Status: Active
Description: DISCOVERY STM32F469 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F469
Platform: Discovery
Part Status: Active
на замовлення 128 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4567.57 грн |
| STM32L073Z-EVAL |
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Виробник: STMicroelectronics
Description: STM32L073VZ EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M0+
Board Type: Evaluation Platform
Utilized IC / Part: STM32L073VZ
Part Status: Active
Description: STM32L073VZ EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M0+
Board Type: Evaluation Platform
Utilized IC / Part: STM32L073VZ
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 16176.98 грн |
| STEVAL-ISV020V1 |
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Виробник: STMicroelectronics
Description: EVAL BOARD FOR SPV1050
Packaging: Box
Function: Energy Harvesting
Type: Power Management
Utilized IC / Part: SPV1050
Supplied Contents: Board(s)
Primary Attributes: Solar Powered
Part Status: Active
Contents: Board(s)
Secondary Attributes: On-Board Test Points
Description: EVAL BOARD FOR SPV1050
Packaging: Box
Function: Energy Harvesting
Type: Power Management
Utilized IC / Part: SPV1050
Supplied Contents: Board(s)
Primary Attributes: Solar Powered
Part Status: Active
Contents: Board(s)
Secondary Attributes: On-Board Test Points
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2937.42 грн |
| STEVAL-ISV021V1 |
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Виробник: STMicroelectronics
Description: EVAL BOARD FOR SPV1050
Packaging: Box
Function: Energy Harvesting
Type: Power Management
Utilized IC / Part: SPV1050
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR SPV1050
Packaging: Box
Function: Energy Harvesting
Type: Power Management
Utilized IC / Part: SPV1050
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11068.24 грн |
| VN7040ASTR |
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Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 24A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
на замовлення 3982 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.05 грн |
| 10+ | 78.73 грн |
| 25+ | 71.49 грн |
| 100+ | 59.61 грн |
| 250+ | 56.05 грн |
| 500+ | 53.90 грн |
| 1000+ | 51.28 грн |
| VN7050ASTR |
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Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 21A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
на замовлення 16293 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.48 грн |
| 10+ | 111.82 грн |
| 25+ | 105.50 грн |
| 100+ | 84.35 грн |
| 250+ | 79.21 грн |
| 500+ | 69.31 грн |
| 1000+ | 56.48 грн |
| VN7140ASTR |
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Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Description: IC PWR DRIVER N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
на замовлення 35513 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.28 грн |
| 10+ | 67.46 грн |
| 25+ | 61.10 грн |
| 100+ | 50.80 грн |
| 250+ | 47.68 грн |
| 500+ | 45.80 грн |
| 1000+ | 43.53 грн |
| VNQ7140AJTR |
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Виробник: STMicroelectronics
Description: IC PWR DRVR N-CHAN 1:1 PWRSSO16
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: 16-PowerLFSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSSO-16
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Description: IC PWR DRVR N-CHAN 1:1 PWRSSO16
Packaging: Cut Tape (CT)
Features: Auto Restart, Status Flag
Package / Case: 16-PowerLFSOP (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 140mOhm
Input Type: Non-Inverting
Voltage - Load: 4V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerSSO-16
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
на замовлення 8938 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 191.73 грн |
| 10+ | 137.48 грн |
| 25+ | 125.71 грн |
| 100+ | 105.85 грн |
| 250+ | 100.07 грн |
| 500+ | 96.59 грн |
| 1000+ | 92.18 грн |
| LSM6DS33TR |
Виробник: STMicroelectronics
Description: IMU ACCEL/GYRO I2C/SPI 16LGA
Packaging: Tape & Reel (TR)
Package / Case: 16-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 16-LGA (3x3)
Part Status: Obsolete
Description: IMU ACCEL/GYRO I2C/SPI 16LGA
Packaging: Tape & Reel (TR)
Package / Case: 16-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Temperature, 6 Axis
Supplier Device Package: 16-LGA (3x3)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| LIS2DE12TR |
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Виробник: STMicroelectronics
Description: ACCEL 2-16G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
Description: ACCEL 2-16G I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 52.73 грн |
| TSX712IYST |
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Виробник: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC CMOS 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| LIS2DE12TR |
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Виробник: STMicroelectronics
Description: ACCEL 2-16G I2C/SPI 12LGA
Packaging: Cut Tape (CT)
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
Description: ACCEL 2-16G I2C/SPI 12LGA
Packaging: Cut Tape (CT)
Features: Adjustable Bandwidth, Selectable Scale, Temperature Sensor
Package / Case: 12-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 2.69kHz
Supplier Device Package: 12-LGA (2x2)
Sensitivity (LSB/g): 64 (±2g) ~ 5 (±16g)
Part Status: Active
на замовлення 33177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.13 грн |
| 5+ | 78.65 грн |
| 10+ | 74.73 грн |
| 25+ | 65.86 грн |
| 50+ | 62.89 грн |
| 100+ | 60.19 грн |
| 500+ | 53.87 грн |
| 1000+ | 51.89 грн |
| TSX712IYST |
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Виробник: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC CMOS 2 CIRCUIT 8MINISO
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 660µA (x2 Channels)
Slew Rate: 1.4V/µs
Gain Bandwidth Product: 2.7 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 200 µV
Supplier Device Package: 8-MiniSO
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 16 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.29 грн |
| 10+ | 188.55 грн |
| 25+ | 178.33 грн |
| 100+ | 145.03 грн |
| 250+ | 137.59 грн |
| 500+ | 123.46 грн |
| 1000+ | 102.42 грн |
| TSV991AIQ1T |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 10V/µs
Gain Bandwidth Product: 20 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 10V/µs
Gain Bandwidth Product: 20 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
товару немає в наявності
В кошику
од. на суму грн.
| TS556IDTTR |
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Виробник: STMicroelectronics
Description: IC OSC TIMER DUAL 2.7MHZ 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
Description: IC OSC TIMER DUAL 2.7MHZ 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 56.19 грн |
| TSV991AIQ1T |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 10V/µs
Gain Bandwidth Product: 20 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Current - Supply: 820µA
Slew Rate: 10V/µs
Gain Bandwidth Product: 20 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 1.5 mV
Number of Circuits: 1
Current - Output / Channel: 35 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 1894 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.53 грн |
| 10+ | 52.19 грн |
| 25+ | 47.09 грн |
| 100+ | 39.00 грн |
| 250+ | 36.51 грн |
| 500+ | 35.00 грн |
| 1000+ | 33.21 грн |
| TS556IDTTR |
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Виробник: STMicroelectronics
Description: IC OSC TIMER DUAL 2.7MHZ 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
Description: IC OSC TIMER DUAL 2.7MHZ 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 2.7MHz
Type: 555 Type, Timer/Oscillator (Dual)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 16V
Supplier Device Package: 14-SO
Part Status: Active
Current - Supply: 130 µA
на замовлення 3958 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 112.88 грн |
| 10+ | 79.53 грн |
| 25+ | 72.22 грн |
| 100+ | 60.21 грн |
| 250+ | 56.62 грн |
| 500+ | 54.45 грн |
| 1000+ | 51.80 грн |
| X-NUCLEO-PLC01A1 |
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Виробник: STMicroelectronics
Description: NUCLEO BOARD PLC GPIO
Packaging: Box
Function: GPIO
Type: Interface
Contents: Board(s)
Utilized IC / Part: CLT01-38SQ7, VNI8200XP
Platform: Nucleo
Part Status: Active
Description: NUCLEO BOARD PLC GPIO
Packaging: Box
Function: GPIO
Type: Interface
Contents: Board(s)
Utilized IC / Part: CLT01-38SQ7, VNI8200XP
Platform: Nucleo
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 819.22 грн |
| STD110N8F6 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
на замовлення 1411 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.13 грн |
| 10+ | 108.30 грн |
| 100+ | 73.97 грн |
| 500+ | 55.63 грн |
| 1000+ | 54.74 грн |
| STD36P4LLF6 |
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Виробник: STMicroelectronics
Description: MOSFET P-CH 40V 36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V 36A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 3405 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 142.76 грн |
| 10+ | 87.04 грн |
| 100+ | 58.56 грн |
| 500+ | 43.50 грн |
| 1000+ | 39.81 грн |
| STD4NK100Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1243 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 226.59 грн |
| 10+ | 141.79 грн |
| 100+ | 98.29 грн |
| 500+ | 78.00 грн |
| STD9HN65M2 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Description: MOSFET N-CH 650V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
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| STGB7H60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 14A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
Description: IGBT TRENCH FS 600V 14A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
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| STL23NS3LLH7 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 92A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET N-CH 30V 92A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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| STL8P4LLF6 |
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Виробник: STMicroelectronics
Description: MOSFET P-CH 40V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 4861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 82.17 грн |
| 10+ | 64.82 грн |
| 100+ | 50.38 грн |
| 500+ | 40.07 грн |
| 1000+ | 32.64 грн |
| STS7P4LLF6 |
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Виробник: STMicroelectronics
Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 4959 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 136.95 грн |
| 10+ | 83.68 грн |
| 100+ | 56.07 грн |
| 500+ | 41.51 грн |
| 1000+ | 37.94 грн |
| STD110N8F6 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
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| STD36P4LLF6 |
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Виробник: STMicroelectronics
Description: MOSFET P-CH 40V 36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V 36A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 39.64 грн |
| STD4NK100Z |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Qualification: AEC-Q101
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| STD9HN65M2 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Description: MOSFET N-CH 650V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
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| STGB7H60DF |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 14A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
Description: IGBT TRENCH FS 600V 14A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
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| STL110NS3LLH7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 120A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
Description: MOSFET N-CH 30V 120A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 14A, 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
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| STL23NS3LLH7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 92A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET N-CH 30V 92A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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| STL7N6LF3 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Power Dissipation (Max): 4.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 432 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Power Dissipation (Max): 4.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 432 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 36.92 грн |
| STL8P4LLF6 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET P-CH 40V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 34.00 грн |
| STS7P4LLF6 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
Description: MOSFET P-CH 40V 7A POWER8-SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 37.70 грн |
| STD12N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
на замовлення 7317 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.44 грн |
| 10+ | 85.68 грн |
| 100+ | 57.78 грн |
| 500+ | 43.01 грн |
| 1000+ | 40.11 грн |
| STH170N8F7-2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 120A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V
Description: MOSFET N-CH 80V 120A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8710 pF @ 40 V
на замовлення 1252 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 193.39 грн |
| 10+ | 138.99 грн |
| 25+ | 127.12 грн |
| 100+ | 107.07 грн |
| 250+ | 101.23 грн |
| 500+ | 97.72 грн |
| STL12N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
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| STL16N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 355mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 704 pF @ 100 V
Description: MOSFET N-CH 600V 8A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 355mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 704 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 219.12 грн |
| 10+ | 137.24 грн |
| 100+ | 94.95 грн |
| 500+ | 74.73 грн |
| STL86N3LLH6AG |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V
Power Dissipation (Max): 4W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 80A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V
Power Dissipation (Max): 4W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Qualification: AEC-Q101
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од. на суму грн.
| STD12N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 36.26 грн |
| STL12N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Description: MOSFET N-CH 600V 6.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 495mOhm @ 4.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
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| STL86N3LLH6AG |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V
Power Dissipation (Max): 4W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 80A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 10.5A, 10V
Power Dissipation (Max): 4W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Qualification: AEC-Q101
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| FERD20M60SR |
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Виробник: STMicroelectronics
Description: DIODE FERD 60V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 20 A
Current - Reverse Leakage @ Vr: 230 µA @ 60 V
Description: DIODE FERD 60V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 20 A
Current - Reverse Leakage @ Vr: 230 µA @ 60 V
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| FERD40U50CFP |
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Виробник: STMicroelectronics
Description: DIODE ARR FERD 50V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
Description: DIODE ARR FERD 50V 20A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220FPAB
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
на замовлення 1189 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.80 грн |
| 50+ | 77.05 грн |
| 100+ | 74.03 грн |
| 500+ | 62.83 грн |
| 1000+ | 57.89 грн |
| STF12N120K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 1200V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
Description: MOSFET N-CH 1200V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
на замовлення 1236 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 869.86 грн |
| 50+ | 473.79 грн |
| 100+ | 438.80 грн |
| 500+ | 383.88 грн |
| STTH80S06W |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 80A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE STANDARD 600V 80A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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| STW12N150K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 1500V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Description: MOSFET N-CH 1500V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
на замовлення 484 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 673.97 грн |
| 30+ | 360.21 грн |
| 120+ | 323.73 грн |
| STW21N150K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 1500V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3145 pF @ 100 V
Description: MOSFET N-CH 1500V 14A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 7A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3145 pF @ 100 V
на замовлення 252 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1052.46 грн |
| 30+ | 618.50 грн |
| 120+ | 560.47 грн |
| SM6T250CAY |
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Виробник: STMicroelectronics
Description: TVS DIODE 213VWM 344VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.75A
Voltage - Reverse Standoff (Typ): 213V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 213VWM 344VC SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.75A
Voltage - Reverse Standoff (Typ): 213V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 49698 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.05 грн |
| 14+ | 22.86 грн |
| 100+ | 18.48 грн |
| 500+ | 16.53 грн |
| SM6T250CAY |
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Виробник: STMicroelectronics
Description: TVS DIODE 213VWM 344VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.75A
Voltage - Reverse Standoff (Typ): 213V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 213VWM 344VC SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.75A
Voltage - Reverse Standoff (Typ): 213V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 14.94 грн |
| STF12N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Description: MOSFET N-CH 600V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
на замовлення 815 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.61 грн |
| 50+ | 64.01 грн |
| 100+ | 57.25 грн |
| 500+ | 42.60 грн |
| STF16N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Description: MOSFET N-CH 600V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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| STF9HN65M2 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Description: MOSFET N-CH 650V 5.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.64 грн |
| 10+ | 70.82 грн |
| STFI12N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 9A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
Description: MOSFET N-CH 600V 9A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
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| STFI13N65M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Description: MOSFET N-CH 650V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STGF7H60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 14A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 24 W
Description: IGBT TRENCH FS 600V 14A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 24 W
товару немає в наявності
В кошику
од. на суму грн.
| STGP7H60DF |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 14A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
Description: IGBT TRENCH FS 600V 14A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 99µJ (on), 100µJ (off)
Test Condition: 400V, 7A, 47Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 28 A
Power - Max: 88 W
на замовлення 1625 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.14 грн |
| 50+ | 60.39 грн |
| 100+ | 53.97 грн |
| 500+ | 40.05 грн |
| 1000+ | 36.65 грн |
| STP110N8F6 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
Description: MOSFET N-CH 80V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
на замовлення 466 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 163.51 грн |
| 50+ | 76.36 грн |
| 100+ | 68.50 грн |





























