Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (132152) > Сторінка 408 з 2203
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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STGP5H60DF | STMicroelectronics |
 Description: IGBT TRENCH FS 600V 10A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 134.5 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/140ns Switching Energy: 56µJ (on), 78.5µJ (off) Test Condition: 400V, 5A, 47Ohm, 15V Gate Charge: 43 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 88 W |
на замовлення 1444 шт: термін постачання 21-31 дні (днів) |
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STGW30M65DF2 | STMicroelectronics |
Description: IGBT TRENCH FS 650V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31.6ns/115ns Switching Energy: 300µJ (on), 960µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 80 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 258 W |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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STP110N8F7 | STMicroelectronics |
Description: MOSFET N-CH 80V 80A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP27N60M2-EP | STMicroelectronics |
Description: MOSFET N-CH 600V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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STF7LN80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STF9N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 7A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STFI7LN80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 5A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STFI9N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 7A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-281 (I2PAKFP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP7LN80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
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STU7LN80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 5A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STF10LN80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 8A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V |
на замовлення 183 шт: термін постачання 21-31 дні (днів) |
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STP10LN80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 8A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGIF7CH60TS-L | STMicroelectronics |
Description: IGBT IPM 600V 10A 26-PWRDIP MOD Packaging: Tube Package / Case: 26-PowerDIP Module (1.134", 28.80mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 10 A Voltage: 600 V |
на замовлення 115 шт: термін постачання 21-31 дні (днів) |
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STWA48N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 42A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Long Leads Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||||
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STF26N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 20A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V |
на замовлення 838 шт: термін постачання 21-31 дні (днів) |
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STFI26N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 20A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STIEC45-24ACS | STMicroelectronics |
Description: TVS DIODE 24VWM 42VC SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 500A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 42V Power Line Protection: No Part Status: Obsolete |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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STIEC45-26ACS | STMicroelectronics |
Description: TVS DIODE 26VWM 45VC SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 500A (8/20µs) Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 45V Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STIEC45-28ACS | STMicroelectronics |
Description: TVS DIODE 28VWM 49VC SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 500A (8/20µs) Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 49V Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGB5H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 10A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 134.5 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/140ns Switching Energy: 56µJ (on), 78.5µJ (off) Test Condition: 400V, 5A, 47Ohm, 15V Gate Charge: 43 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 88 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGD5H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 134.5 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A Supplier Device Package: DPAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/140ns Switching Energy: 56µJ (on), 78.5µJ (off) Test Condition: 400V, 5A, 47Ohm, 15V Gate Charge: 43 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 83 W |
на замовлення 221 шт: термін постачання 21-31 дні (днів) |
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STL50DN6F7 | STMicroelectronics |
Description: MOSFET 2N-CH 60V 57A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 62.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active |
на замовлення 17685 шт: термін постачання 21-31 дні (днів) |
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STD7LN80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
на замовлення 4791 шт: термін постачання 21-31 дні (днів) |
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STL7LN80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 5A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL11N6F7 | STMicroelectronics |
Description: MOSFET N-CH 60V 11A POWERFLAT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL100N8F7 | STMicroelectronics |
Description: MOSFET N-CH 80V 100A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL8DN6LF6AG | STMicroelectronics |
Description: MOSFET 2N-CH 32A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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STL8N6LF6AG | STMicroelectronics |
Description: MOSFET N-CH 60V 32A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V Power Dissipation (Max): 4.8W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2118 шт: термін постачання 21-31 дні (днів) |
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STB80N4F6AG | STMicroelectronics |
Description: MOSFET N-CH 40V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 920 шт: термін постачання 21-31 дні (днів) |
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STGB15M65DF2 | STMicroelectronics |
Description: IGBT TRENCH FS 650V 30A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 142 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/93ns Switching Energy: 90µJ (on), 450µJ (off) Test Condition: 400V, 15A, 12Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 136 W |
на замовлення 2485 шт: термін постачання 21-31 дні (днів) |
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STGB30H60DLFB | STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/146ns Switching Energy: 393µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 149 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 260 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STH290N4F6-2AG | STMicroelectronics |
Description: MOSFET N-CH 40V 180A H2PAK-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STH290N4F6-6AG | STMicroelectronics |
Description: MOSFET N-CH 40V 180A H2PAK-6 |
на замовлення 975 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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STD19N3LLH6AG | STMicroelectronics |
Description: MOSFET N-CH 30V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STD85N10F7AG | STMicroelectronics |
Description: MOSFET N-CH 100V 70A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 7684 шт: термін постачання 21-31 дні (днів) |
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STHVDAC-256MTGF3 | STMicroelectronics |
Description: IC DAC 7BIT 20FLIPCHIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F769NIH6 | STMicroelectronics |
Description: IC MCU 32BIT 2MB FLASH 216TFBGA Packaging: Tray Package / Case: 216-TFBGA Mounting Type: Surface Mount Speed: 216MHz Program Memory Size: 2MB (2M x 8) RAM Size: 512K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M7 Data Converters: A/D 24x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SAI, SPDIF, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT Supplier Device Package: 216-TFBGA (13x13) Part Status: Active Number of I/O: 168 DigiKey Programmable: Not Verified |
на замовлення 717 шт: термін постачання 21-31 дні (днів) |
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STM32F767ZIT6 | STMicroelectronics |
Description: IC MCU 32BIT 2MB FLASH 144LQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 216MHz Program Memory Size: 2MB (2M x 8) RAM Size: 512K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M7 Data Converters: A/D 24x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SAI, SPDIF, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Active Number of I/O: 114 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F769I-EVAL | STMicroelectronics |
Description: STM32F769 EVAL BRD Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M7 Board Type: Evaluation Platform Utilized IC / Part: STM32F769 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F769I-DISCO | STMicroelectronics |
Description: DISCOVERY STM32F769 EVAL BRD Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M7 Board Type: Evaluation Platform Utilized IC / Part: STM32F769 Platform: Discovery Part Status: Active |
на замовлення 95 шт: термін постачання 21-31 дні (днів) |
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LSM303AGRTR | STMicroelectronics |
Description: IMU ACCEL/MAG I2C/SPI 12LGA Packaging: Tape & Reel (TR) Package / Case: 12-VFLGA Module Output Type: I2C, SPI Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Sensor Type: Accelerometer, Magnetometer, Temperature, 6 Axis Supplier Device Package: 12-LGA (2x2) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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ST3485EIYDT | STMicroelectronics |
Description: IC TXRX 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 1/1 Data Rate: 15Mbps Protocol: RS422, RS485 Supplier Device Package: 8-SOIC Receiver Hysteresis: 70 mV Duplex: Half Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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TSX922IYDT | STMicroelectronics |
Description: IC CMOS 2 CIRCUIT 8SOIC Output Type: Rail-to-Rail Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Voltage - Supply Span (Max): 16 V Voltage - Supply Span (Min): 4 V Current - Output / Channel: 74 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-SOIC Voltage - Input Offset: 5 mV Current - Input Bias: 10 pA Gain Bandwidth Product: 10 MHz Slew Rate: 17V/µs Current - Supply: 2.8mA (x2 Channels) Operating Temperature: -40°C ~ 125°C Amplifier Type: CMOS Mounting Type: Surface Mount Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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STM706RDAM6F | STMicroelectronics |
Description: IC SUPERVISOR 1 CHANNEL 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 160ms Minimum Voltage - Threshold: 2.63V Supplier Device Package: 8-SO DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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LSM303AGRTR | STMicroelectronics |
Description: IMU ACCEL/MAG I2C/SPI 12LGA Packaging: Cut Tape (CT) Package / Case: 12-VFLGA Module Output Type: I2C, SPI Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Sensor Type: Accelerometer, Magnetometer, Temperature, 6 Axis Supplier Device Package: 12-LGA (2x2) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ST3485EIYDT | STMicroelectronics |
Description: IC TXRX 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 1/1 Data Rate: 15Mbps Protocol: RS422, RS485 Supplier Device Package: 8-SOIC Receiver Hysteresis: 70 mV Duplex: Half Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 14487 шт: термін постачання 21-31 дні (днів) |
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TSX922IYDT | STMicroelectronics |
Description: IC CMOS 2 CIRCUIT 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 2.8mA (x2 Channels) Slew Rate: 17V/µs Gain Bandwidth Product: 10 MHz Current - Input Bias: 10 pA Voltage - Input Offset: 5 mV Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 74 mA Voltage - Supply Span (Min): 4 V Voltage - Supply Span (Max): 16 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM706RDAM6F | STMicroelectronics |
Description: IC SUPERVISOR 1 CHANNEL 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Push-Pull, Totem Pole Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 160ms Minimum Voltage - Threshold: 2.63V Supplier Device Package: 8-SO DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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X-NUCLEO-53L0A1 | STMicroelectronics |
Description: NUCLEO BOARD VL53L0X SENSOR Packaging: Bulk Function: Light, 3D Time-of-Flight (ToF) Type: Sensor Contents: Board(s), Accessories Utilized IC / Part: VL53L0CX Platform: Nucleo Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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53L0-SATEL-I1 | STMicroelectronics |
Description: SATELLITE BOARD VL53L0X Packaging: Bulk Interface: I2C Contents: Board(s) Sensor Type: Light, 3D Time-of-Flight (ToF) Utilized IC / Part: VL53L0X Supplied Contents: Board(s) Part Status: Active |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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STEVAL-3DP001V1 | STMicroelectronics |
Description: EVAL BOARD FOR L6474 Secondary Attributes: On-Board LEDs Contents: Board(s) Part Status: Obsolete Primary Attributes: 3D Printers Supplied Contents: Board(s) Utilized IC / Part: L6474 Type: Power Management Function: Motor Controller/Driver Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-ISA178V1 | STMicroelectronics |
Description: EVAL BOARD FOR VIPER01 Board Type: Fully Populated Regulator Topology: Buck Frequency - Switching: 60kHz Current - Output: 200mA Voltage - Input: 85 ~ 265 VAC Voltage - Output: 5V Packaging: Bulk Part Status: Active Outputs and Type: 1, Non-Isolated Main Purpose: AC/DC, Non-Isolated Supplied Contents: Board(s) Utilized IC / Part: VIPer01 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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VL53L0CXV0DH/1 | STMicroelectronics |
Description: SENSOR OPTICAL 24CM I2C Packaging: Tape & Reel (TR) Output Type: I2C Sensing Distance: 200cm Operating Temperature: -20°C ~ 70°C Part Status: Active |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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VL53L0CXV0DH/1 | STMicroelectronics |
Description: SENSOR OPTICAL 24CM I2C Packaging: Cut Tape (CT) Output Type: I2C Sensing Distance: 200cm Operating Temperature: -20°C ~ 70°C Part Status: Active |
на замовлення 37661 шт: термін постачання 21-31 дні (днів) |
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SRK2001L | STMicroelectronics |
Description: IC REG CTLR AC-DC LLC RES 10SSOP Packaging: Tube Package / Case: 10-SOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C Voltage - Supply: 4.5V ~ 32V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 10-SSOP Current - Supply: 35 mA DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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SPC574KADPT144S | STMicroelectronics |
Description: SPC574K EVAL BRD Part Status: Active Utilized IC / Part: SPC574K Board Type: Evaluation Platform Contents: Board(s) Type: MCU 32-Bit Mounting Type: Socket Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SPC574SADPT244S | STMicroelectronics |
Description: SPC574SX EVAL BRD Packaging: Bulk Mounting Type: Socket Type: MCU 32-Bit Contents: Board(s) Board Type: Evaluation Platform Utilized IC / Part: SPC574Sx Part Status: Not For New Designs |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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SPC58XXADPT144S | STMicroelectronics |
Description: SPC58XB/C EVAL BRD Utilized IC / Part: SPC58xB/C Contents: Board(s) Type: MCU 32-Bit Mounting Type: Socket Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| SPC58XXADPT176S | STMicroelectronics |
Description: SPC58XE/G EVAL BRD Utilized IC / Part: SPC58xE/G Contents: Board(s) Type: MCU 32-Bit Mounting Type: Socket Packaging: Bulk |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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SPC58XXADPT292S | STMicroelectronics |
Description: SPC58XE/G EVAL BRD Utilized IC / Part: SPC58xE/G Contents: Board(s) Type: MCU 32-Bit Mounting Type: Socket Packaging: Bulk |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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| STGP5H60DF |
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Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
Description: IGBT TRENCH FS 600V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
на замовлення 1444 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.78 грн |
| 50+ | 67.18 грн |
| 100+ | 60.10 грн |
| 500+ | 44.75 грн |
| 1000+ | 41.01 грн |
| STGW30M65DF2 |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
Description: IGBT TRENCH FS 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 308.55 грн |
| 30+ | 163.67 грн |
| 120+ | 134.23 грн |
| STP110N8F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
Description: MOSFET N-CH 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| STP27N60M2-EP |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STF7LN80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Description: MOSFET N-CH 800V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.51 грн |
| 50+ | 88.88 грн |
| 100+ | 80.01 грн |
| 500+ | 60.49 грн |
| 1000+ | 55.79 грн |
| STF9N80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
Description: MOSFET N-CH 800V 7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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| STFI7LN80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Description: MOSFET N-CH 800V 5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STFI9N80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 7A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
Description: MOSFET N-CH 800V 7A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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В кошику
од. на суму грн.
| STP7LN80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 445 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 213.61 грн |
| 50+ | 101.78 грн |
| 100+ | 91.71 грн |
| STU7LN80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Description: MOSFET N-CH 800V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.49 грн |
| 75+ | 92.53 грн |
| 150+ | 83.69 грн |
| 525+ | 66.74 грн |
| 1050+ | 61.64 грн |
| 2025+ | 57.55 грн |
| STF10LN80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
Description: MOSFET N-CH 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.75 грн |
| 50+ | 124.03 грн |
| 100+ | 112.31 грн |
| STP10LN80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
Description: MOSFET N-CH 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STGIF7CH60TS-L |
|
Виробник: STMicroelectronics
Description: IGBT IPM 600V 10A 26-PWRDIP MOD
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
Description: IGBT IPM 600V 10A 26-PWRDIP MOD
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
на замовлення 115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 755.56 грн |
| 13+ | 485.25 грн |
| 104+ | 375.47 грн |
| STWA48N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
Description: MOSFET N-CH 600V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| STF26N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
на замовлення 838 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 261.08 грн |
| 10+ | 164.56 грн |
| 50+ | 127.06 грн |
| 100+ | 107.90 грн |
| 500+ | 88.02 грн |
| STFI26N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
товару немає в наявності
В кошику
од. на суму грн.
| STIEC45-24ACS |
|
Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 42VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 24VWM 42VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.12 грн |
| STIEC45-26ACS |
|
Виробник: STMicroelectronics
Description: TVS DIODE 26VWM 45VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 45V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 26VWM 45VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 45V
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| STIEC45-28ACS |
|
Виробник: STMicroelectronics
Description: TVS DIODE 28VWM 49VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 49V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 28VWM 49VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 49V
Power Line Protection: No
Part Status: Obsolete
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| STGB5H60DF |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
Description: IGBT TRENCH FS 600V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
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| STGD5H60DF |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 83 W
Description: IGBT TRENCH FS 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 83 W
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.52 грн |
| 10+ | 58.28 грн |
| 100+ | 38.40 грн |
| STL50DN6F7 |
|
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
на замовлення 17685 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.04 грн |
| 10+ | 85.63 грн |
| 50+ | 64.47 грн |
| 100+ | 54.10 грн |
| 500+ | 42.85 грн |
| STD7LN80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Description: MOSFET N-CH 800V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 4791 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.37 грн |
| 10+ | 124.03 грн |
| 100+ | 85.14 грн |
| 500+ | 64.31 грн |
| 1000+ | 60.47 грн |
| STL7LN80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Description: MOSFET N-CH 800V 5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
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| STL11N6F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 11A POWERFLAT
Description: MOSFET N-CH 60V 11A POWERFLAT
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| STL100N8F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
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| STL8DN6LF6AG |
|
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.66 грн |
| 10+ | 84.57 грн |
| 100+ | 56.86 грн |
| 500+ | 42.24 грн |
| 1000+ | 38.66 грн |
| STL8N6LF6AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 32A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Power Dissipation (Max): 4.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 32A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Power Dissipation (Max): 4.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2118 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.66 грн |
| 10+ | 84.19 грн |
| 100+ | 56.64 грн |
| 500+ | 42.07 грн |
| 1000+ | 38.51 грн |
| STB80N4F6AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
на замовлення 920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.53 грн |
| 10+ | 101.33 грн |
| 100+ | 71.84 грн |
| 500+ | 54.67 грн |
| STGB15M65DF2 |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
Description: IGBT TRENCH FS 650V 30A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 182.76 грн |
| 10+ | 113.29 грн |
| 100+ | 77.37 грн |
| 500+ | 58.21 грн |
| STGB30H60DLFB |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 393µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 393µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
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| STH290N4F6-2AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2
Description: MOSFET N-CH 40V 180A H2PAK-2
товару немає в наявності
В кошику
од. на суму грн.
| STH290N4F6-6AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-6
Description: MOSFET N-CH 40V 180A H2PAK-6
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
| STD19N3LLH6AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
Qualification: AEC-Q101
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| STD85N10F7AG |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 70A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 70A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Qualification: AEC-Q101
на замовлення 7684 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 184.34 грн |
| 10+ | 114.51 грн |
| 50+ | 87.16 грн |
| 100+ | 73.51 грн |
| 500+ | 58.97 грн |
| STHVDAC-256MTGF3 |
|
Виробник: STMicroelectronics
Description: IC DAC 7BIT 20FLIPCHIP
Description: IC DAC 7BIT 20FLIPCHIP
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| STM32F769NIH6 |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 2MB FLASH 216TFBGA
Packaging: Tray
Package / Case: 216-TFBGA
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SAI, SPDIF, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 216-TFBGA (13x13)
Part Status: Active
Number of I/O: 168
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 216TFBGA
Packaging: Tray
Package / Case: 216-TFBGA
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SAI, SPDIF, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 216-TFBGA (13x13)
Part Status: Active
Number of I/O: 168
DigiKey Programmable: Not Verified
на замовлення 717 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1571.25 грн |
| 10+ | 1213.87 грн |
| 25+ | 1139.10 грн |
| 160+ | 971.86 грн |
| 320+ | 946.76 грн |
| 640+ | 926.10 грн |
| STM32F767ZIT6 |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SAI, SPDIF, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 114
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SAI, SPDIF, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 114
DigiKey Programmable: Not Verified
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| STM32F769I-EVAL |
|
Виробник: STMicroelectronics
Description: STM32F769 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32F769
Part Status: Active
Description: STM32F769 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32F769
Part Status: Active
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| STM32F769I-DISCO |
|
Виробник: STMicroelectronics
Description: DISCOVERY STM32F769 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32F769
Platform: Discovery
Part Status: Active
Description: DISCOVERY STM32F769 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32F769
Platform: Discovery
Part Status: Active
на замовлення 95 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6778.68 грн |
| LSM303AGRTR |
|
Виробник: STMicroelectronics
Description: IMU ACCEL/MAG I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Magnetometer, Temperature, 6 Axis
Supplier Device Package: 12-LGA (2x2)
Part Status: Active
Description: IMU ACCEL/MAG I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Magnetometer, Temperature, 6 Axis
Supplier Device Package: 12-LGA (2x2)
Part Status: Active
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Мінімальне замовлення: 8000 шт
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| ST3485EIYDT |
|
Виробник: STMicroelectronics
Description: IC TXRX 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 15Mbps
Protocol: RS422, RS485
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC TXRX 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 15Mbps
Protocol: RS422, RS485
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 109.36 грн |
| 5000+ | 103.23 грн |
| TSX922IYDT |
|
Виробник: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SOIC
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 16 V
Voltage - Supply Span (Min): 4 V
Current - Output / Channel: 74 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 5 mV
Current - Input Bias: 10 pA
Gain Bandwidth Product: 10 MHz
Slew Rate: 17V/µs
Current - Supply: 2.8mA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
Description: IC CMOS 2 CIRCUIT 8SOIC
Output Type: Rail-to-Rail
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 16 V
Voltage - Supply Span (Min): 4 V
Current - Output / Channel: 74 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 5 mV
Current - Input Bias: 10 pA
Gain Bandwidth Product: 10 MHz
Slew Rate: 17V/µs
Current - Supply: 2.8mA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
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Мінімальне замовлення: 2500 шт
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| STM706RDAM6F |
|
Виробник: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 160ms Minimum
Voltage - Threshold: 2.63V
Supplier Device Package: 8-SO
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 160ms Minimum
Voltage - Threshold: 2.63V
Supplier Device Package: 8-SO
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 2500 шт
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| LSM303AGRTR |
|
Виробник: STMicroelectronics
Description: IMU ACCEL/MAG I2C/SPI 12LGA
Packaging: Cut Tape (CT)
Package / Case: 12-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Magnetometer, Temperature, 6 Axis
Supplier Device Package: 12-LGA (2x2)
Part Status: Active
Description: IMU ACCEL/MAG I2C/SPI 12LGA
Packaging: Cut Tape (CT)
Package / Case: 12-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Magnetometer, Temperature, 6 Axis
Supplier Device Package: 12-LGA (2x2)
Part Status: Active
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| ST3485EIYDT |
|
Виробник: STMicroelectronics
Description: IC TXRX 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 15Mbps
Protocol: RS422, RS485
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC TXRX 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 15Mbps
Protocol: RS422, RS485
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 14487 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 206.49 грн |
| 10+ | 148.87 грн |
| 25+ | 136.34 грн |
| 100+ | 115.01 грн |
| 250+ | 108.84 грн |
| 500+ | 106.94 грн |
| TSX922IYDT |
|
Виробник: STMicroelectronics
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2.8mA (x2 Channels)
Slew Rate: 17V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 2.8mA (x2 Channels)
Slew Rate: 17V/µs
Gain Bandwidth Product: 10 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 5 mV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 4 V
Voltage - Supply Span (Max): 16 V
Qualification: AEC-Q100
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| STM706RDAM6F |
|
Виробник: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 160ms Minimum
Voltage - Threshold: 2.63V
Supplier Device Package: 8-SO
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 160ms Minimum
Voltage - Threshold: 2.63V
Supplier Device Package: 8-SO
DigiKey Programmable: Not Verified
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| X-NUCLEO-53L0A1 |
|
Виробник: STMicroelectronics
Description: NUCLEO BOARD VL53L0X SENSOR
Packaging: Bulk
Function: Light, 3D Time-of-Flight (ToF)
Type: Sensor
Contents: Board(s), Accessories
Utilized IC / Part: VL53L0CX
Platform: Nucleo
Part Status: Active
Description: NUCLEO BOARD VL53L0X SENSOR
Packaging: Bulk
Function: Light, 3D Time-of-Flight (ToF)
Type: Sensor
Contents: Board(s), Accessories
Utilized IC / Part: VL53L0CX
Platform: Nucleo
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2590.27 грн |
| 53L0-SATEL-I1 |
|
Виробник: STMicroelectronics
Description: SATELLITE BOARD VL53L0X
Packaging: Bulk
Interface: I2C
Contents: Board(s)
Sensor Type: Light, 3D Time-of-Flight (ToF)
Utilized IC / Part: VL53L0X
Supplied Contents: Board(s)
Part Status: Active
Description: SATELLITE BOARD VL53L0X
Packaging: Bulk
Interface: I2C
Contents: Board(s)
Sensor Type: Light, 3D Time-of-Flight (ToF)
Utilized IC / Part: VL53L0X
Supplied Contents: Board(s)
Part Status: Active
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1537.23 грн |
| STEVAL-3DP001V1 |
|
Виробник: STMicroelectronics
Description: EVAL BOARD FOR L6474
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Part Status: Obsolete
Primary Attributes: 3D Printers
Supplied Contents: Board(s)
Utilized IC / Part: L6474
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Description: EVAL BOARD FOR L6474
Secondary Attributes: On-Board LEDs
Contents: Board(s)
Part Status: Obsolete
Primary Attributes: 3D Printers
Supplied Contents: Board(s)
Utilized IC / Part: L6474
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
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| STEVAL-ISA178V1 |
|
Виробник: STMicroelectronics
Description: EVAL BOARD FOR VIPER01
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 60kHz
Current - Output: 200mA
Voltage - Input: 85 ~ 265 VAC
Voltage - Output: 5V
Packaging: Bulk
Part Status: Active
Outputs and Type: 1, Non-Isolated
Main Purpose: AC/DC, Non-Isolated
Supplied Contents: Board(s)
Utilized IC / Part: VIPer01
Description: EVAL BOARD FOR VIPER01
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 60kHz
Current - Output: 200mA
Voltage - Input: 85 ~ 265 VAC
Voltage - Output: 5V
Packaging: Bulk
Part Status: Active
Outputs and Type: 1, Non-Isolated
Main Purpose: AC/DC, Non-Isolated
Supplied Contents: Board(s)
Utilized IC / Part: VIPer01
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2867.97 грн |
| VL53L0CXV0DH/1 |
|
Виробник: STMicroelectronics
Description: SENSOR OPTICAL 24CM I2C
Packaging: Tape & Reel (TR)
Output Type: I2C
Sensing Distance: 200cm
Operating Temperature: -20°C ~ 70°C
Part Status: Active
Description: SENSOR OPTICAL 24CM I2C
Packaging: Tape & Reel (TR)
Output Type: I2C
Sensing Distance: 200cm
Operating Temperature: -20°C ~ 70°C
Part Status: Active
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 196.24 грн |
| VL53L0CXV0DH/1 |
|
Виробник: STMicroelectronics
Description: SENSOR OPTICAL 24CM I2C
Packaging: Cut Tape (CT)
Output Type: I2C
Sensing Distance: 200cm
Operating Temperature: -20°C ~ 70°C
Part Status: Active
Description: SENSOR OPTICAL 24CM I2C
Packaging: Cut Tape (CT)
Output Type: I2C
Sensing Distance: 200cm
Operating Temperature: -20°C ~ 70°C
Part Status: Active
на замовлення 37661 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 313.30 грн |
| 5+ | 270.61 грн |
| 10+ | 258.80 грн |
| 25+ | 229.71 грн |
| 50+ | 220.73 грн |
| 100+ | 212.50 грн |
| 500+ | 192.73 грн |
| 1000+ | 186.66 грн |
| SRK2001L |
|
Виробник: STMicroelectronics
Description: IC REG CTLR AC-DC LLC RES 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 4.5V ~ 32V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 10-SSOP
Current - Supply: 35 mA
DigiKey Programmable: Not Verified
Description: IC REG CTLR AC-DC LLC RES 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 4.5V ~ 32V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 10-SSOP
Current - Supply: 35 mA
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| SPC574KADPT144S |
|
Виробник: STMicroelectronics
Description: SPC574K EVAL BRD
Part Status: Active
Utilized IC / Part: SPC574K
Board Type: Evaluation Platform
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
Description: SPC574K EVAL BRD
Part Status: Active
Utilized IC / Part: SPC574K
Board Type: Evaluation Platform
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| SPC574SADPT244S |
|
Виробник: STMicroelectronics
Description: SPC574SX EVAL BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Board Type: Evaluation Platform
Utilized IC / Part: SPC574Sx
Part Status: Not For New Designs
Description: SPC574SX EVAL BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Board Type: Evaluation Platform
Utilized IC / Part: SPC574Sx
Part Status: Not For New Designs
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 52068.80 грн |
| SPC58XXADPT144S |
|
Виробник: STMicroelectronics
Description: SPC58XB/C EVAL BRD
Utilized IC / Part: SPC58xB/C
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
Description: SPC58XB/C EVAL BRD
Utilized IC / Part: SPC58xB/C
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 61861.81 грн |
| SPC58XXADPT176S |
Виробник: STMicroelectronics
Description: SPC58XE/G EVAL BRD
Utilized IC / Part: SPC58xE/G
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
Description: SPC58XE/G EVAL BRD
Utilized IC / Part: SPC58xE/G
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 67005.16 грн |
| SPC58XXADPT292S |
|
Виробник: STMicroelectronics
Description: SPC58XE/G EVAL BRD
Utilized IC / Part: SPC58xE/G
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
Description: SPC58XE/G EVAL BRD
Utilized IC / Part: SPC58xE/G
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Socket
Packaging: Bulk
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 71097.85 грн |