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2SC4793,HFEF(M 2SC4793,HFEF(M Toshiba Semiconductor and Storage 2SC4793_Rev2006.pdf Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4793,NSEIKIF(J 2SC4793,NSEIKIF(J Toshiba Semiconductor and Storage 2SC4793_Rev2006.pdf Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4793,TOA1F(J 2SC4793,TOA1F(J Toshiba Semiconductor and Storage 2SC4793_Rev2006.pdf Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4793,WNLF(J 2SC4793,WNLF(J Toshiba Semiconductor and Storage 2SC4793_Rev2006.pdf Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4793,YHF(J 2SC4793,YHF(J Toshiba Semiconductor and Storage 2SC4793_Rev2006.pdf Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4793,YHF(M 2SC4793,YHF(M Toshiba Semiconductor and Storage 2SC4793_Rev2006.pdf Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4881(CANO,F,M) 2SC4881(CANO,F,M) Toshiba Semiconductor and Storage 2SC4881.pdf Description: TRANS NPN 50V 5A TO220NIS
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2SC4881,LS1SUMIF(M 2SC4881,LS1SUMIF(M Toshiba Semiconductor and Storage 2SC4881.pdf Description: TRANS NPN 50V 5A TO220NIS
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2SC5171(LBS2MATQ,M 2SC5171(LBS2MATQ,M Toshiba Semiconductor and Storage 2SC5171.pdf Description: TRANS NPN 180V 2A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
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2SC5171(ONK,Q,M) 2SC5171(ONK,Q,M) Toshiba Semiconductor and Storage 2SC5171.pdf Description: TRANS NPN 180V 2A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
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2SC5171,MATUDQ(J 2SC5171,MATUDQ(J Toshiba Semiconductor and Storage 2SC5171.pdf Description: TRANS NPN 180V 2A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
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2SC5171,ONKQ(J 2SC5171,ONKQ(J Toshiba Semiconductor and Storage 2SC5171.pdf Description: TRANS NPN 180V 2A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
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2SC5171,Q(J 2SC5171,Q(J Toshiba Semiconductor and Storage 2SC5171.pdf Description: TRANS NPN 180V 2A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
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2SC5172(YAZK,Q,M) 2SC5172(YAZK,Q,M) Toshiba Semiconductor and Storage 2SC5172_2006-11-10.pdf Description: TRANS NPN 400V 5A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 2A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
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2SC5459(TOJS,Q,M) 2SC5459(TOJS,Q,M) Toshiba Semiconductor and Storage 2SC5459_2007-04-26.pdf Description: TRANS NPN 400V 3A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
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2SC5549,T6F(J 2SC5549,T6F(J Toshiba Semiconductor and Storage 2SC5549_2006-11-10.pdf Description: TRANS NPN 400V 1A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 25mA, 200mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 40mA, 5V
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 900 mW
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2SC6010(T2MITUM,FM 2SC6010(T2MITUM,FM Toshiba Semiconductor and Storage 2SC6010_2006-11-13.pdf Description: TRANS NPN 600V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
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2SD2129,ALPSQ(M 2SD2129,ALPSQ(M Toshiba Semiconductor and Storage 2SD2129_2006-11-21.pdf Description: TRANS NPN 100V 3A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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2SD2129,LS4ALPSQ(M 2SD2129,LS4ALPSQ(M Toshiba Semiconductor and Storage 2SD2129_2006-11-21.pdf Description: TRANS NPN 100V 3A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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2SD2206(T6CANO,F,M 2SD2206(T6CANO,F,M Toshiba Semiconductor and Storage 2SD2206_2009-12-21.pdf Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
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2SD2206(T6CNO,A,F) 2SD2206(T6CNO,A,F) Toshiba Semiconductor and Storage 2SD2206_2009-12-21.pdf Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
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2SD2206(TE6,F,M) 2SD2206(TE6,F,M) Toshiba Semiconductor and Storage 2SD2206_2009-12-21.pdf Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
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2SD2206,T6F(J 2SD2206,T6F(J Toshiba Semiconductor and Storage 2SD2206_2009-12-21.pdf Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
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2SD2206A(T6SEP,F,M 2SD2206A(T6SEP,F,M Toshiba Semiconductor and Storage 2SD2206_2009-12-21.pdf Description: TRANS NPN 120V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 900 mW
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2SK3670(F,M) 2SK3670(F,M) Toshiba Semiconductor and Storage 2SK3670_2009-12-21.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
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2SK3670(T6CANO,A,F 2SK3670(T6CANO,A,F Toshiba Semiconductor and Storage 2SK3670_2009-12-21.pdf Description: MOSFET N-CH TO92MOD
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2SK3670(T6CANO,F,M 2SK3670(T6CANO,F,M Toshiba Semiconductor and Storage 2SK3670_2009-12-21.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
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2SK3670,F(J 2SK3670,F(J Toshiba Semiconductor and Storage 2SK3670_2009-12-21.pdf Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
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CLS03(T6L,CANO-O,Q Toshiba Semiconductor and Storage CLS03.pdf Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(T6L,SHINA,Q) Toshiba Semiconductor and Storage CLS03.pdf Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(TE16L,DNSO,Q Toshiba Semiconductor and Storage CLS03.pdf Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(TE16L,PCD,Q) Toshiba Semiconductor and Storage CLS03.pdf Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(TE16L,PSD,Q) Toshiba Semiconductor and Storage CLS03.pdf Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(TE16L,SQC,Q) Toshiba Semiconductor and Storage CLS03.pdf Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(TE16R,Q) Toshiba Semiconductor and Storage CLS03.pdf Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03,LNITTOQ(O Toshiba Semiconductor and Storage CLS03.pdf Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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TA58L05S(FJTN,AQ) TA58L05S(FJTN,AQ) Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58L05S(FJTN,QM) TA58L05S(FJTN,QM) Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S(LS2DNS,AQ TA58L05S(LS2DNS,AQ Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S(LS2PEV,AQ TA58L05S(LS2PEV,AQ Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S(LS2YAZ,AQ TA58L05S(LS2YAZ,AQ Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S(SUMIS,AQ) TA58L05S(SUMIS,AQ) Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,ALPSAQ(J TA58L05S,ALPSAQ(J Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58L05S,ALPSAQ(M TA58L05S,ALPSAQ(M Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58L05S,APNQ(M TA58L05S,APNQ(M Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58L05S,ASHIQ(M TA58L05S,ASHIQ(M Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,COMTQ(M TA58L05S,COMTQ(M Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,HY-ATQ(M TA58L05S,HY-ATQ(M Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,L2SUMIQ(M TA58L05S,L2SUMIQ(M Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,LS2MTDQ(J TA58L05S,LS2MTDQ(J Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,LS2TOKQ(J TA58L05S,LS2TOKQ(J Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,LS4NSAQ(J TA58L05S,LS4NSAQ(J Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,Q(J TA58L05S,Q(J Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58L05S,SUMISQ(M TA58L05S,SUMISQ(M Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L06S,HY-ATQ(M TA58L06S,HY-ATQ(M Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 6V 250MA TO220NIS
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TA58L06S,Q(J TA58L06S,Q(J Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 6V 250MA TO220NIS
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TA58L06S,SUMISQ(M TA58L06S,SUMISQ(M Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 6V 250MA TO220NIS
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TA58L08S(FJTN,AQ) TA58L08S(FJTN,AQ) Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 8V 250MA TO220NIS
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TA58L08S(FJTN,QM) TA58L08S(FJTN,QM) Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 8V 250MA TO220NIS
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TA58L08S,Q(J TA58L08S,Q(J Toshiba Semiconductor and Storage TA58L05S-15S_2013-11-01.pdf Description: IC REG LINEAR 8V 250MA TO220NIS
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2SC4793,HFEF(M 2SC4793_Rev2006.pdf
2SC4793,HFEF(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4793,NSEIKIF(J 2SC4793_Rev2006.pdf
2SC4793,NSEIKIF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4793,TOA1F(J 2SC4793_Rev2006.pdf
2SC4793,TOA1F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4793,WNLF(J 2SC4793_Rev2006.pdf
2SC4793,WNLF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4793,YHF(J 2SC4793_Rev2006.pdf
2SC4793,YHF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4793,YHF(M 2SC4793_Rev2006.pdf
2SC4793,YHF(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 1A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 2 W
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2SC4881(CANO,F,M) 2SC4881.pdf
2SC4881(CANO,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 5A TO220NIS
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2SC4881,LS1SUMIF(M 2SC4881.pdf
2SC4881,LS1SUMIF(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 5A TO220NIS
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2SC5171(LBS2MATQ,M 2SC5171.pdf
2SC5171(LBS2MATQ,M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 180V 2A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
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2SC5171(ONK,Q,M) 2SC5171.pdf
2SC5171(ONK,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 180V 2A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
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2SC5171,MATUDQ(J 2SC5171.pdf
2SC5171,MATUDQ(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 180V 2A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
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2SC5171,ONKQ(J 2SC5171.pdf
2SC5171,ONKQ(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 180V 2A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
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2SC5171,Q(J 2SC5171.pdf
2SC5171,Q(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 180V 2A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 180 V
Power - Max: 2 W
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2SC5172(YAZK,Q,M) 2SC5172_2006-11-10.pdf
2SC5172(YAZK,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 400V 5A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 250mA, 2A
Current - Collector Cutoff (Max): 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
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2SC5459(TOJS,Q,M) 2SC5459_2007-04-26.pdf
2SC5459(TOJS,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 400V 3A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
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2SC5549,T6F(J 2SC5549_2006-11-10.pdf
2SC5549,T6F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 400V 1A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 25mA, 200mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 40mA, 5V
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 900 mW
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2SC6010(T2MITUM,FM 2SC6010_2006-11-13.pdf
2SC6010(T2MITUM,FM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 600V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1 W
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2SD2129,ALPSQ(M 2SD2129_2006-11-21.pdf
2SD2129,ALPSQ(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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2SD2129,LS4ALPSQ(M 2SD2129_2006-11-21.pdf
2SD2129,LS4ALPSQ(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 3A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1.5A, 3V
Supplier Device Package: TO-220NIS
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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2SD2206(T6CANO,F,M 2SD2206_2009-12-21.pdf
2SD2206(T6CANO,F,M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
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2SD2206(T6CNO,A,F) 2SD2206_2009-12-21.pdf
2SD2206(T6CNO,A,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
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2SD2206(TE6,F,M) 2SD2206_2009-12-21.pdf
2SD2206(TE6,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
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2SD2206,T6F(J 2SD2206_2009-12-21.pdf
2SD2206,T6F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 100V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 900 mW
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2SD2206A(T6SEP,F,M 2SD2206_2009-12-21.pdf
2SD2206A(T6SEP,F,M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 900 mW
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2SK3670(F,M) 2SK3670_2009-12-21.pdf
2SK3670(F,M)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
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2SK3670(T6CANO,A,F 2SK3670_2009-12-21.pdf
2SK3670(T6CANO,A,F
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
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2SK3670(T6CANO,F,M 2SK3670_2009-12-21.pdf
2SK3670(T6CANO,F,M
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
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2SK3670,F(J 2SK3670_2009-12-21.pdf
2SK3670,F(J
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 670mA (Tj)
Supplier Device Package: TO-92MOD
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CLS03(T6L,CANO-O,Q CLS03.pdf
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(T6L,SHINA,Q) CLS03.pdf
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(TE16L,DNSO,Q CLS03.pdf
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(TE16L,PCD,Q) CLS03.pdf
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(TE16L,PSD,Q) CLS03.pdf
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(TE16L,SQC,Q) CLS03.pdf
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03(TE16R,Q) CLS03.pdf
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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CLS03,LNITTOQ(O CLS03.pdf
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 10A L-FLAT
Packaging: Bulk
Package / Case: L-FLAT™
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: L-FLAT™ (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
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TA58L05S(FJTN,AQ) TA58L05S-15S_2013-11-01.pdf
TA58L05S(FJTN,AQ)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58L05S(FJTN,QM) TA58L05S-15S_2013-11-01.pdf
TA58L05S(FJTN,QM)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S(LS2DNS,AQ TA58L05S-15S_2013-11-01.pdf
TA58L05S(LS2DNS,AQ
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S(LS2PEV,AQ TA58L05S-15S_2013-11-01.pdf
TA58L05S(LS2PEV,AQ
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S(LS2YAZ,AQ TA58L05S-15S_2013-11-01.pdf
TA58L05S(LS2YAZ,AQ
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S(SUMIS,AQ) TA58L05S-15S_2013-11-01.pdf
TA58L05S(SUMIS,AQ)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,ALPSAQ(J TA58L05S-15S_2013-11-01.pdf
TA58L05S,ALPSAQ(J
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58L05S,ALPSAQ(M TA58L05S-15S_2013-11-01.pdf
TA58L05S,ALPSAQ(M
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58L05S,APNQ(M TA58L05S-15S_2013-11-01.pdf
TA58L05S,APNQ(M
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
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TA58L05S,ASHIQ(M TA58L05S-15S_2013-11-01.pdf
TA58L05S,ASHIQ(M
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,COMTQ(M TA58L05S-15S_2013-11-01.pdf
TA58L05S,COMTQ(M
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,HY-ATQ(M TA58L05S-15S_2013-11-01.pdf
TA58L05S,HY-ATQ(M
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,L2SUMIQ(M TA58L05S-15S_2013-11-01.pdf
TA58L05S,L2SUMIQ(M
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,LS2MTDQ(J TA58L05S-15S_2013-11-01.pdf
TA58L05S,LS2MTDQ(J
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,LS2TOKQ(J TA58L05S-15S_2013-11-01.pdf
TA58L05S,LS2TOKQ(J
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,LS4NSAQ(J TA58L05S-15S_2013-11-01.pdf
TA58L05S,LS4NSAQ(J
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
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TA58L05S,Q(J TA58L05S-15S_2013-11-01.pdf
TA58L05S,Q(J
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 250mA
Operating Temperature: -40°C ~ 105°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 29V
Number of Regulators: 1
Supplier Device Package: TO-220NIS
Voltage - Output (Min/Fixed): 5V
Voltage Dropout (Max): 0.4V @ 200mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 50 mA
товару немає в наявності
В кошику  од. на суму  грн.
TA58L05S,SUMISQ(M TA58L05S-15S_2013-11-01.pdf
TA58L05S,SUMISQ(M
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 250MA TO220NIS
товару немає в наявності
В кошику  од. на суму  грн.
TA58L06S,HY-ATQ(M TA58L05S-15S_2013-11-01.pdf
TA58L06S,HY-ATQ(M
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 250MA TO220NIS
товару немає в наявності
В кошику  од. на суму  грн.
TA58L06S,Q(J TA58L05S-15S_2013-11-01.pdf
TA58L06S,Q(J
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 250MA TO220NIS
товару немає в наявності
В кошику  од. на суму  грн.
TA58L06S,SUMISQ(M TA58L05S-15S_2013-11-01.pdf
TA58L06S,SUMISQ(M
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 6V 250MA TO220NIS
товару немає в наявності
В кошику  од. на суму  грн.
TA58L08S(FJTN,AQ) TA58L05S-15S_2013-11-01.pdf
TA58L08S(FJTN,AQ)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 250MA TO220NIS
товару немає в наявності
В кошику  од. на суму  грн.
TA58L08S(FJTN,QM) TA58L05S-15S_2013-11-01.pdf
TA58L08S(FJTN,QM)
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 250MA TO220NIS
товару немає в наявності
В кошику  од. на суму  грн.
TA58L08S,Q(J TA58L05S-15S_2013-11-01.pdf
TA58L08S,Q(J
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 8V 250MA TO220NIS
товару немає в наявності
В кошику  од. на суму  грн.
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