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TPHR9203PL,L1Q TPHR9203PL,L1Q Toshiba Semiconductor and Storage TPHR9203PL_datasheet_en_20191018.pdf?did=53586&prodName=TPHR9203PL Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
TPH2R506PL,L1Q TPH2R506PL,L1Q Toshiba Semiconductor and Storage TPH2R506PL_datasheet_en_20191017.pdf?did=55522&prodName=TPH2R506PL Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5000+41.89 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TK4R3E06PL,S1X TK4R3E06PL,S1X Toshiba Semiconductor and Storage docget.jsp?did=55597&prodName=TK4R3E06PL Description: MOSFET N-CH 60V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
2+166.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK8R2A06PL,S4X TK8R2A06PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=55711&prodName=TK8R2A06PL Description: MOSFET N-CH 60V 50A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
на замовлення 3571 шт:
термін постачання 21-31 дні (днів)
3+125.86 грн
50+57.94 грн
100+51.77 грн
500+38.41 грн
1000+35.14 грн
2000+32.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK4R3A06PL,S4X TK4R3A06PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=55594&prodName=TK4R3A06PL Description: MOSFET N-CH 60V 68A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
3+152.36 грн
50+71.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK3R1E04PL,S1X TK3R1E04PL,S1X Toshiba Semiconductor and Storage docget.jsp?did=54759&prodName=TK3R1E04PL Description: MOSFET N-CH 40V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
3+160.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK3R1A04PL,S4X TK3R1A04PL,S4X Toshiba Semiconductor and Storage docget.jsp?did=55292&prodName=TK3R1A04PL Description: MOSFET N-CH 40V 82A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
на замовлення 147 шт:
термін постачання 21-31 дні (днів)
3+147.39 грн
50+68.46 грн
100+61.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TPN1R603PL,L1Q TPN1R603PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=54484&prodName=TPN1R603PL Description: MOSFET N-CH 30V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
на замовлення 31966 шт:
термін постачання 21-31 дні (днів)
4+100.19 грн
10+60.68 грн
100+40.24 грн
500+29.53 грн
1000+26.87 грн
2000+25.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TPHR9203PL,L1Q TPHR9203PL,L1Q Toshiba Semiconductor and Storage TPHR9203PL_datasheet_en_20191018.pdf?did=53586&prodName=TPHR9203PL Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
на замовлення 4076 шт:
термін постачання 21-31 дні (днів)
2+167.27 грн
10+102.94 грн
100+69.89 грн
500+52.28 грн
1000+48.01 грн
2000+44.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TPH2R506PL,L1Q TPH2R506PL,L1Q Toshiba Semiconductor and Storage TPH2R506PL_datasheet_en_20191017.pdf?did=55522&prodName=TPH2R506PL Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
на замовлення 24051 шт:
термін постачання 21-31 дні (днів)
3+142.42 грн
10+92.26 грн
100+62.48 грн
500+48.38 грн
1000+46.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP5771(TP,E TLP5771(TP,E Toshiba Semiconductor and Storage TLP5771_datasheet_en_20180306.pdf?did=53276&prodName=TLP5771 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
В кошику  од. на суму  грн.
TLP5772(TP,E TLP5772(TP,E Toshiba Semiconductor and Storage docget.jsp?did=53278&prodName=TLP5772 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
TLP5774(TP,E TLP5774(TP,E Toshiba Semiconductor and Storage TLP5774_datasheet_en_20200129.pdf?did=53280&prodName=TLP5774 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+72.70 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLP2367(TPR,E TLP2367(TPR,E Toshiba Semiconductor and Storage TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367 Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+80.81 грн
6000+75.01 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLP2767(TP,E TLP2767(TP,E Toshiba Semiconductor and Storage TLP2767_datasheet_en_20160422.pdf?did=36717&prodName=TLP2767 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
товару немає в наявності
В кошику  од. на суму  грн.
TLP240D(TP1,F TLP240D(TP1,F Toshiba Semiconductor and Storage TLP240D_datasheet_en_20230525.pdf?did=13993&prodName=TLP240D Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 250 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CQC, cUL, UL, VDE
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+54.95 грн
3000+50.56 грн
4500+49.36 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLP241A(TP1,F TLP241A(TP1,F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
1500+58.57 грн
3000+53.92 грн
4500+52.66 грн
7500+48.07 грн
10500+47.27 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLP3403(TP,F TLP3403(TP,F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
Operating Temperature: -40°C ~ 110°C
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+142.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLP5771(TP,E TLP5771(TP,E Toshiba Semiconductor and Storage TLP5771_datasheet_en_20180306.pdf?did=53276&prodName=TLP5771 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 928 шт:
термін постачання 21-31 дні (днів)
2+184.66 грн
10+115.94 грн
100+84.44 грн
500+67.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5772(TP,E TLP5772(TP,E Toshiba Semiconductor and Storage docget.jsp?did=53278&prodName=TLP5772 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
на замовлення 581 шт:
термін постачання 21-31 дні (днів)
2+165.61 грн
10+114.58 грн
100+88.04 грн
500+71.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5774(TP,E TLP5774(TP,E Toshiba Semiconductor and Storage TLP5774_datasheet_en_20200129.pdf?did=53280&prodName=TLP5774 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 4010 шт:
термін постачання 21-31 дні (днів)
2+192.94 грн
10+121.68 грн
100+88.88 грн
500+71.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP2367(TPR,E TLP2367(TPR,E Toshiba Semiconductor and Storage TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367 Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 8279 шт:
термін постачання 21-31 дні (днів)
2+187.97 грн
10+130.93 грн
100+100.88 грн
500+82.25 грн
1000+78.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP2767(TP,E TLP2767(TP,E Toshiba Semiconductor and Storage TLP2767_datasheet_en_20160422.pdf?did=36717&prodName=TLP2767 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 313 шт:
термін постачання 21-31 дні (днів)
2+175.55 грн
10+122.40 грн
100+94.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP240D(TP1,F TLP240D(TP1,F Toshiba Semiconductor and Storage TLP240D_datasheet_en_20230525.pdf?did=13993&prodName=TLP240D Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 250 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CQC, cUL, UL, VDE
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)
3+128.35 грн
10+88.11 грн
100+66.92 грн
500+54.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP241A(TP1,F TLP241A(TP1,F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
на замовлення 30185 шт:
термін постачання 21-31 дні (днів)
3+135.80 грн
10+93.53 грн
100+71.14 грн
500+57.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP3403(TP,F TLP3403(TP,F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
Operating Temperature: -40°C ~ 110°C
на замовлення 5585 шт:
термін постачання 21-31 дні (днів)
2+307.21 грн
10+218.16 грн
100+172.11 грн
500+142.58 грн
1000+139.40 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SSM3K7002KFU,LF SSM3K7002KFU,LF Toshiba Semiconductor and Storage docget.jsp?did=35715&prodName=SSM3K7002KFU Description: MOSFET N-CH 60V 400MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
3000+2.29 грн
6000+1.91 грн
9000+1.33 грн
15000+1.19 грн
21000+1.10 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLP2770(D4,E TLP2770(D4,E Toshiba Semiconductor and Storage TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770 Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
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TC7WH02FU,LJ(CT TC7WH02FU,LJ(CT Toshiba Semiconductor and Storage TC7WH02FU_datasheet_en_20200205.pdf?did=20119&prodName=TC7WH02FU Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
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TC7WH02FU,LJ(CT TC7WH02FU,LJ(CT Toshiba Semiconductor and Storage TC7WH02FU_datasheet_en_20200205.pdf?did=20119&prodName=TC7WH02FU Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
25+13.25 грн
39+8.37 грн
44+7.37 грн
100+5.89 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
KIA78L06BP Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO 6V DIP
Packaging: Bulk
Part Status: Active
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TTA004B,Q TTA004B,Q Toshiba Semiconductor and Storage docget.jsp?did=14399&prodName=TTA004B Description: TRANS PNP 160V 1.5A TO-126N
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
на замовлення 2392 шт:
термін постачання 21-31 дні (днів)
6+57.96 грн
10+34.53 грн
250+19.09 грн
500+16.03 грн
1000+14.45 грн
2000+13.11 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TTC004B,Q TTC004B,Q Toshiba Semiconductor and Storage docget.jsp?did=14400&prodName=TTC004B Description: TRANS NPN 160V 1.5A TO-126N
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
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TTD1509B,Q(S Toshiba Semiconductor and Storage TTD1509B_datasheet_en_20160930.pdf?did=35778&prodName=TTD1509B Description: TRANSISTOR NPN TO126N
Packaging: Tube
Part Status: Active
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2SA1020A,NSEIKIF(J 2SA1020A,NSEIKIF(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
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2SA1020A,T6CSF(J 2SA1020A,T6CSF(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
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2SA1020-O(F,M) 2SA1020-O(F,M) Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-O(TE6,F,M) 2SA1020-O(TE6,F,M) Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
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2SA1020-O,CKF(J 2SA1020-O,CKF(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
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2SA1020-O,F(J 2SA1020-O,F(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
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2SA1020-O,T6CSF(J 2SA1020-O,T6CSF(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
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2SA1020-Y(6MBH1,AF 2SA1020-Y(6MBH1,AF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
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2SA1020-Y(F,M) 2SA1020-Y(F,M) Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
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2SA1020-Y(HIT,F,M) 2SA1020-Y(HIT,F,M) Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
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2SA1020-Y(ND1,AF) 2SA1020-Y(ND1,AF) Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
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2SA1020-Y(T6CANOAF 2SA1020-Y(T6CANOAF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
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2SA1020-Y(T6CANOFM 2SA1020-Y(T6CANOFM Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
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2SA1020-Y(T6CN,A,F 2SA1020-Y(T6CN,A,F Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
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2SA1020-Y(T6FJT,AF 2SA1020-Y(T6FJT,AF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6ND1,AF 2SA1020-Y(T6ND1,AF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6ND3,AF 2SA1020-Y(T6ND3,AF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6OMI,FM 2SA1020-Y(T6OMI,FM Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6TOJ,FM 2SA1020-Y(T6TOJ,FM Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6TR,A,F 2SA1020-Y(T6TR,A,F Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6TR1,AF 2SA1020-Y(T6TR1,AF Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y,F(J 2SA1020-Y,F(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y,HOF(M 2SA1020-Y,HOF(M Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y,T6F(J 2SA1020-Y,T6F(J Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y,T6KEHF(M 2SA1020-Y,T6KEHF(M Toshiba Semiconductor and Storage DS_264_2SA1020.pdf Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1315-Y,HOF(M 2SA1315-Y,HOF(M Toshiba Semiconductor and Storage 2SA1315_2009-12-21.pdf Description: TRANS PNP 80V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
TPHR9203PL,L1Q TPHR9203PL_datasheet_en_20191018.pdf?did=53586&prodName=TPHR9203PL
TPHR9203PL,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
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TPH2R506PL,L1Q TPH2R506PL_datasheet_en_20191017.pdf?did=55522&prodName=TPH2R506PL
TPH2R506PL,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+41.89 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TK4R3E06PL,S1X docget.jsp?did=55597&prodName=TK4R3E06PL
TK4R3E06PL,S1X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK8R2A06PL,S4X docget.jsp?did=55711&prodName=TK8R2A06PL
TK8R2A06PL,S4X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 50A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
на замовлення 3571 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.86 грн
50+57.94 грн
100+51.77 грн
500+38.41 грн
1000+35.14 грн
2000+32.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK4R3A06PL,S4X docget.jsp?did=55594&prodName=TK4R3A06PL
TK4R3A06PL,S4X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 68A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+152.36 грн
50+71.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK3R1E04PL,S1X docget.jsp?did=54759&prodName=TK3R1E04PL
TK3R1E04PL,S1X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK3R1A04PL,S4X docget.jsp?did=55292&prodName=TK3R1A04PL
TK3R1A04PL,S4X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 82A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
на замовлення 147 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.39 грн
50+68.46 грн
100+61.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TPN1R603PL,L1Q docget.jsp?did=54484&prodName=TPN1R603PL
TPN1R603PL,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
на замовлення 31966 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.19 грн
10+60.68 грн
100+40.24 грн
500+29.53 грн
1000+26.87 грн
2000+25.32 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TPHR9203PL,L1Q TPHR9203PL_datasheet_en_20191018.pdf?did=53586&prodName=TPHR9203PL
TPHR9203PL,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
на замовлення 4076 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+167.27 грн
10+102.94 грн
100+69.89 грн
500+52.28 грн
1000+48.01 грн
2000+44.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TPH2R506PL,L1Q TPH2R506PL_datasheet_en_20191017.pdf?did=55522&prodName=TPH2R506PL
TPH2R506PL,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
на замовлення 24051 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.42 грн
10+92.26 грн
100+62.48 грн
500+48.38 грн
1000+46.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP5771(TP,E TLP5771_datasheet_en_20180306.pdf?did=53276&prodName=TLP5771
TLP5771(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
товару немає в наявності
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TLP5772(TP,E docget.jsp?did=53278&prodName=TLP5772
TLP5772(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
товару немає в наявності
В кошику  од. на суму  грн.
TLP5774(TP,E TLP5774_datasheet_en_20200129.pdf?did=53280&prodName=TLP5774
TLP5774(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+72.70 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLP2367(TPR,E TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367
TLP2367(TPR,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+80.81 грн
6000+75.01 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLP2767(TP,E TLP2767_datasheet_en_20160422.pdf?did=36717&prodName=TLP2767
TLP2767(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
товару немає в наявності
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TLP240D(TP1,F TLP240D_datasheet_en_20230525.pdf?did=13993&prodName=TLP240D
TLP240D(TP1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 250 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CQC, cUL, UL, VDE
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+54.95 грн
3000+50.56 грн
4500+49.36 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLP241A(TP1,F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(TP1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+58.57 грн
3000+53.92 грн
4500+52.66 грн
7500+48.07 грн
10500+47.27 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
TLP3403(TP,F
TLP3403(TP,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
Operating Temperature: -40°C ~ 110°C
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+142.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLP5771(TP,E TLP5771_datasheet_en_20180306.pdf?did=53276&prodName=TLP5771
TLP5771(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 928 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+184.66 грн
10+115.94 грн
100+84.44 грн
500+67.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5772(TP,E docget.jsp?did=53278&prodName=TLP5772
TLP5772(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 10V ~ 30V
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Part Status: Active
Number of Channels: 1
на замовлення 581 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.61 грн
10+114.58 грн
100+88.04 грн
500+71.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP5774(TP,E TLP5774_datasheet_en_20200129.pdf?did=53280&prodName=TLP5774
TLP5774(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.65V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 8 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 4010 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+192.94 грн
10+121.68 грн
100+88.88 грн
500+71.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP2367(TPR,E TLP2367_datasheet_en_20171025.pdf?did=36692&prodName=TLP2367
TLP2367(TPR,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 8279 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+187.97 грн
10+130.93 грн
100+100.88 грн
500+82.25 грн
1000+78.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP2767(TP,E TLP2767_datasheet_en_20160422.pdf?did=36717&prodName=TLP2767
TLP2767(TP,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.6V
Data Rate: 50MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 2ns, 1ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
Number of Channels: 1
Current - Output / Channel: 10 mA
на замовлення 313 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+175.55 грн
10+122.40 грн
100+94.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLP240D(TP1,F TLP240D_datasheet_en_20230525.pdf?did=13993&prodName=TLP240D
TLP240D(TP1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-200V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 250 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 200 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CQC, cUL, UL, VDE
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+128.35 грн
10+88.11 грн
100+66.92 грн
500+54.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP241A(TP1,F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(TP1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
на замовлення 30185 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+135.80 грн
10+93.53 грн
100+71.14 грн
500+57.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP3403(TP,F
TLP3403(TP,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-20V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 220 mOhms
Operating Temperature: -40°C ~ 110°C
на замовлення 5585 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+307.21 грн
10+218.16 грн
100+172.11 грн
500+142.58 грн
1000+139.40 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SSM3K7002KFU,LF docget.jsp?did=35715&prodName=SSM3K7002KFU
SSM3K7002KFU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.29 грн
6000+1.91 грн
9000+1.33 грн
15000+1.19 грн
21000+1.10 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLP2770(D4,E TLP2770_datasheet_en_20171115.pdf?did=53548&prodName=TLP2770
TLP2770(D4,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Bulk
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 1.3ns, 1ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
товару немає в наявності
В кошику  од. на суму  грн.
TC7WH02FU,LJ(CT TC7WH02FU_datasheet_en_20200205.pdf?did=20119&prodName=TC7WH02FU
TC7WH02FU,LJ(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
товару немає в наявності
В кошику  од. на суму  грн.
TC7WH02FU,LJ(CT TC7WH02FU_datasheet_en_20200205.pdf?did=20119&prodName=TC7WH02FU
TC7WH02FU,LJ(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP SM8
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SM8
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.25 грн
39+8.37 грн
44+7.37 грн
100+5.89 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
KIA78L06BP
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO 6V DIP
Packaging: Bulk
Part Status: Active
товару немає в наявності
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TTA004B,Q docget.jsp?did=14399&prodName=TTA004B
TTA004B,Q
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 160V 1.5A TO-126N
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
на замовлення 2392 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.96 грн
10+34.53 грн
250+19.09 грн
500+16.03 грн
1000+14.45 грн
2000+13.11 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TTC004B,Q docget.jsp?did=14400&prodName=TTC004B
TTC004B,Q
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 160V 1.5A TO-126N
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-126N
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 10 W
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TTD1509B,Q(S TTD1509B_datasheet_en_20160930.pdf?did=35778&prodName=TTD1509B
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN TO126N
Packaging: Tube
Part Status: Active
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2SA1020A,NSEIKIF(J DS_264_2SA1020.pdf
2SA1020A,NSEIKIF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020A,T6CSF(J DS_264_2SA1020.pdf
2SA1020A,T6CSF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
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В кошику  од. на суму  грн.
2SA1020-O(F,M) DS_264_2SA1020.pdf
2SA1020-O(F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-O(TE6,F,M) DS_264_2SA1020.pdf
2SA1020-O(TE6,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-O,CKF(J DS_264_2SA1020.pdf
2SA1020-O,CKF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-O,F(J DS_264_2SA1020.pdf
2SA1020-O,F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-O,T6CSF(J DS_264_2SA1020.pdf
2SA1020-O,T6CSF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(6MBH1,AF DS_264_2SA1020.pdf
2SA1020-Y(6MBH1,AF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(F,M) DS_264_2SA1020.pdf
2SA1020-Y(F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(HIT,F,M) DS_264_2SA1020.pdf
2SA1020-Y(HIT,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(ND1,AF) DS_264_2SA1020.pdf
2SA1020-Y(ND1,AF)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6CANOAF DS_264_2SA1020.pdf
2SA1020-Y(T6CANOAF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6CANOFM DS_264_2SA1020.pdf
2SA1020-Y(T6CANOFM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6CN,A,F DS_264_2SA1020.pdf
2SA1020-Y(T6CN,A,F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6FJT,AF DS_264_2SA1020.pdf
2SA1020-Y(T6FJT,AF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6ND1,AF DS_264_2SA1020.pdf
2SA1020-Y(T6ND1,AF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6ND3,AF DS_264_2SA1020.pdf
2SA1020-Y(T6ND3,AF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6OMI,FM DS_264_2SA1020.pdf
2SA1020-Y(T6OMI,FM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6TOJ,FM DS_264_2SA1020.pdf
2SA1020-Y(T6TOJ,FM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6TR,A,F DS_264_2SA1020.pdf
2SA1020-Y(T6TR,A,F
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y(T6TR1,AF DS_264_2SA1020.pdf
2SA1020-Y(T6TR1,AF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y,F(J DS_264_2SA1020.pdf
2SA1020-Y,F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y,HOF(M DS_264_2SA1020.pdf
2SA1020-Y,HOF(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y,T6F(J DS_264_2SA1020.pdf
2SA1020-Y,T6F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1020-Y,T6KEHF(M DS_264_2SA1020.pdf
2SA1020-Y,T6KEHF(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
2SA1315-Y,HOF(M 2SA1315_2009-12-21.pdf
2SA1315-Y,HOF(M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 80V 2A TO92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92MOD
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 900 mW
товару немає в наявності
В кошику  од. на суму  грн.
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