Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13460) > Сторінка 118 з 225
| Фото | Назва | Виробник | Інформація |
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RN1104,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM |
на замовлення 8457 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1106MFV,L3F | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 30629 шт: термін постачання 21-31 дні (днів) |
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SSM3J351R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 3.5A SOT-23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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SSM3J351R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 3.5A SOT-23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V |
на замовлення 60458 шт: термін постачання 21-31 дні (днів) |
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SSM3K15ACTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA CST3CPackaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: CST3C Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SSM3K15ACTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA CST3CPackaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: CST3C Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
на замовлення 29676 шт: термін постачання 21-31 дні (днів) |
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| TLP171A(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-60V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP171D(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 200MA 0-200V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLP3547(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 5A 0-60VPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 5 A Supplier Device Package: 8-DIP Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 50 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: CSA, cUL, UL, VDE |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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TLP3548(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-400VPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 400 mA Supplier Device Package: 8-DIP Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 5 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: CSA, cUL, UL, VDE |
на замовлення 82 шт: термін постачання 21-31 дні (днів) |
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TLP3548(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-400V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP3549(F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 600MA 0-600VPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.64VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 600 mA Supplier Device Package: 8-DIP Voltage - Load: 0 V ~ 600 V On-State Resistance (Max): 2 Ohms |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TLP3549(TP1,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 600MA 0-600V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP3409S(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 650MA 0-100VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 650 mA Supplier Device Package: 4-S-VSON Part Status: Active Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 600 mOhms Operating Temperature: -40°C ~ 110°C |
на замовлення 3800 шт: термін постачання 21-31 дні (днів) |
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TLP3409S(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 650MA 0-100VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 650 mA Supplier Device Package: 4-S-VSON Part Status: Active Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 600 mOhms Operating Temperature: -40°C ~ 110°C |
на замовлення 5774 шт: термін постачання 21-31 дні (днів) |
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TK290A60Y,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11.5A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TK290A65Y,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 11.5A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 450µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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TK380A60Y,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 9.7A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Power Dissipation (Max): 30W Vgs(th) (Max) @ Id: 4V @ 360µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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TK560A60Y,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 7A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V Power Dissipation (Max): 30W Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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TK560A65Y,S4X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 7A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V Power Dissipation (Max): 30W Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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74HC4066D(BJ) | Toshiba Semiconductor and Storage |
Description: IC SWITCH QUAD 14SOIC |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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74HC4538D | Toshiba Semiconductor and Storage |
Description: IC MMV 2-CIR 25-NS 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -40°C ~ 125°C (TA) Propagation Delay: 25 ns Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOIC Part Status: Active Voltage - Supply: 2 V ~ 6 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74HCT4053D(BJ) | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPDT TRIPLE 16SOIC |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74LCX541FT(AJ) | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 3.6V 20TSSOPB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LCX573FT(AJ) | Toshiba Semiconductor and Storage |
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74VHC14FT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14TSSOPBPackaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-TSSOPB Input Logic Level - High: 2V ~ 4.5V Input Logic Level - Low: 0.1V ~ 0.36V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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74VHC153FT(BJ) | Toshiba Semiconductor and Storage |
Description: IC MULTIPLEXER 2 X 4:1 16TSSOPBPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 2 x 4:1 Type: Multiplexer Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Independent Circuits: 2 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOPB Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74VHC4052AFT(BJ) | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX DUAL 4X1 16TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF2B5M4CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 15VC CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 260000 шт: термін постачання 21-31 дні (днів) |
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DF2B6M4CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DF2S5M4CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 15VC CST2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 0.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 3.7V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No Part Status: Active |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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DF2S5M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 15VC SL2Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 0.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 3.7V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SSM3J355R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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SSM3J358R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SSM3K344R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 3A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 10 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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SSM3K35AFS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 20V 250MA SSMPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SSM3K35AMFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 250MA VESMPackaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V |
на замовлення 144000 шт: термін постачання 21-31 дні (днів) |
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TCK301G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 9WCSPPackaging: Tape & Reel (TR) Features: Slew Rate Controlled, Status Flag Package / Case: 9-UFBGA, WLCSP Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 73mOhm Voltage - Load: 18V (Max) Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 9-WCSP (1.5x1.5) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TCK304G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 9WCSPPackaging: Tape & Reel (TR) Features: Slew Rate Controlled, Status Flag Package / Case: 9-UFBGA, WLCSP Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 73mOhm Voltage - Load: 2.3V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 9-WCSP (1.5x1.5) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TCK305G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TCR3DF15,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.5V 300MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 65 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.5V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.47V @ 300mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 78 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TCR4DG35,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.5V 420MA 4-WCSPEPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 420mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 68 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPE (0.65x0.65) Voltage - Output (Min/Fixed): 3.5V Control Features: Enable Part Status: Active PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.26V @ 420mA Protection Features: Over Current, Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HCT4053D(BJ) | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPDT TRIPLE 16SOIC |
на замовлення 2828 шт: термін постачання 21-31 дні (днів) |
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74LCX541FT(AJ) | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 3.6V 20TSSOPB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LCX573FT(AJ) | Toshiba Semiconductor and Storage |
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC |
на замовлення 1828 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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74VHC14FT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14TSSOPBPackaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-TSSOPB Input Logic Level - High: 2V ~ 4.5V Input Logic Level - Low: 0.1V ~ 0.36V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
на замовлення 26924 шт: термін постачання 21-31 дні (днів) |
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74VHC153FT(BJ) | Toshiba Semiconductor and Storage |
Description: IC MULTIPLEXER 2 X 4:1 16TSSOPBPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 2 x 4:1 Type: Multiplexer Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Independent Circuits: 2 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOPB Part Status: Active |
на замовлення 3433 шт: термін постачання 21-31 дні (днів) |
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74VHC4052AFT(BJ) | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX DUAL 4X1 16TSSOP |
на замовлення 1648 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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DF2B5M4CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 15VC CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 267390 шт: термін постачання 21-31 дні (днів) |
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DF2B6M4CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 15VC CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: CST2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 23640 шт: термін постачання 21-31 дні (днів) |
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DF2S5M4CT,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 15VC CST2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 0.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 3.7V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No Part Status: Active |
на замовлення 121096 шт: термін постачання 21-31 дні (днів) |
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DF2S5M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 15VC SL2Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Capacitance @ Frequency: 0.35pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 3.7V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 30W Power Line Protection: No |
на замовлення 48876 шт: термін постачання 21-31 дні (днів) |
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SSM3J355R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V |
на замовлення 28735 шт: термін постачання 21-31 дні (днів) |
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SSM3J358R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V |
на замовлення 11285 шт: термін постачання 21-31 дні (днів) |
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SSM3K344R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 3A SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 10 V |
на замовлення 24001 шт: термін постачання 21-31 дні (днів) |
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SSM3K35AFS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 20V 250MA SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V |
на замовлення 4984 шт: термін постачання 21-31 дні (днів) |
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SSM3K35AMFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 250MA VESMPackaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V |
на замовлення 150213 шт: термін постачання 21-31 дні (днів) |
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TCK301G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 9WCSPPackaging: Cut Tape (CT) Features: Slew Rate Controlled, Status Flag Package / Case: 9-UFBGA, WLCSP Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 73mOhm Voltage - Load: 18V (Max) Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 9-WCSP (1.5x1.5) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TCK304G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 9WCSPPackaging: Cut Tape (CT) Features: Slew Rate Controlled, Status Flag Package / Case: 9-UFBGA, WLCSP Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 73mOhm Voltage - Load: 2.3V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: 9-WCSP (1.5x1.5) Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO Part Status: Active |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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TCK305G,LF | Toshiba Semiconductor and Storage |
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP |
на замовлення 9966 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| RN1104,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
на замовлення 8457 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN1106MFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 30629 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.62 грн |
| 52+ | 6.05 грн |
| 100+ | 3.76 грн |
| 500+ | 2.55 грн |
| 1000+ | 2.23 грн |
| 2000+ | 1.97 грн |
| SSM3J351R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 3.5A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Description: MOSFET P-CH 60V 3.5A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.05 грн |
| 6000+ | 7.27 грн |
| 9000+ | 6.15 грн |
| 15000+ | 5.67 грн |
| 21000+ | 5.46 грн |
| SSM3J351R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 3.5A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Description: MOSFET P-CH 60V 3.5A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
на замовлення 60458 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.58 грн |
| 16+ | 19.66 грн |
| 100+ | 14.44 грн |
| 500+ | 10.20 грн |
| 1000+ | 8.92 грн |
| SSM3K15ACTC,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.34 грн |
| 20000+ | 2.19 грн |
| SSM3K15ACTC,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
на замовлення 29676 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.52 грн |
| 32+ | 9.83 грн |
| 100+ | 4.23 грн |
| 500+ | 3.40 грн |
| 1000+ | 3.22 грн |
| 2000+ | 3.06 грн |
| TLP171A(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Description: SSR RELAY SPST-NO 400MA 0-60V
товару немає в наявності
В кошику
од. на суму грн.
| TLP171D(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 200MA 0-200V
Description: SSR RELAY SPST-NO 200MA 0-200V
товару немає в наявності
В кошику
од. на суму грн.
| TLP3547(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 5 A
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
Description: SSR RELAY SPST-NO 5A 0-60V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 5 A
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
на замовлення 296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 547.94 грн |
| 10+ | 469.77 грн |
| 25+ | 448.63 грн |
| 50+ | 406.57 грн |
| 100+ | 392.64 грн |
| 250+ | 374.91 грн |
| TLP3548(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-400V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 400 mA
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 5 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
Description: SSR RELAY SPST-NO 400MA 0-400V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 400 mA
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 5 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CSA, cUL, UL, VDE
на замовлення 82 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 601.83 грн |
| 10+ | 516.40 грн |
| 25+ | 493.14 грн |
| 50+ | 446.92 грн |
| TLP3548(TP1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-400V
Description: SSR RELAY SPST-NO 400MA 0-400V
товару немає в наявності
В кошику
од. на суму грн.
| TLP3549(F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 600MA 0-600V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 600 mA
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 2 Ohms
Description: SSR RELAY SPST-NO 600MA 0-600V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 600 mA
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 600 V
On-State Resistance (Max): 2 Ohms
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 785.56 грн |
| 10+ | 709.45 грн |
| 25+ | 630.56 грн |
| 50+ | 562.16 грн |
| TLP3549(TP1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 600MA 0-600V
Description: SSR RELAY SPST-NO 600MA 0-600V
товару немає в наявності
В кошику
од. на суму грн.
| TLP3409S(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 650MA 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 650 mA
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Description: SSR RELAY SPST-NO 650MA 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 650 mA
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
на замовлення 3800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 183.40 грн |
| TLP3409S(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 650MA 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 650 mA
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
Description: SSR RELAY SPST-NO 650MA 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 650 mA
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 600 mOhms
Operating Temperature: -40°C ~ 110°C
на замовлення 5774 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 379.72 грн |
| 10+ | 272.23 грн |
| 100+ | 217.09 грн |
| 500+ | 181.21 грн |
| TK290A60Y,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
товару немає в наявності
В кошику
од. на суму грн.
| TK290A65Y,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Description: MOSFET N-CH 650V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.64 грн |
| 50+ | 108.25 грн |
| TK380A60Y,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 360µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 146.17 грн |
| TK560A60Y,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Description: MOSFET N-CH 600V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.80 грн |
| 50+ | 72.94 грн |
| TK560A65Y,S4X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Description: MOSFET N-CH 650V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 162.50 грн |
| 74HC4066D(BJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH QUAD 14SOIC
Description: IC SWITCH QUAD 14SOIC
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 8.93 грн |
| 5000+ | 8.12 грн |
| 74HC4538D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MMV 2-CIR 25-NS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 125°C (TA)
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Description: IC MMV 2-CIR 25-NS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 125°C (TA)
Propagation Delay: 25 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 8.83 грн |
| 74HCT4053D(BJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDT TRIPLE 16SOIC
Description: IC SWITCH SPDT TRIPLE 16SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 11.59 грн |
| 74LCX541FT(AJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
товару немає в наявності
В кошику
од. на суму грн.
| 74LCX573FT(AJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC14FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 7.95 грн |
| 5000+ | 7.42 грн |
| 7500+ | 7.30 грн |
| 12500+ | 6.72 грн |
| 17500+ | 6.65 грн |
| 74VHC153FT(BJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 2 X 4:1 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
Description: IC MULTIPLEXER 2 X 4:1 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 8.93 грн |
| 74VHC4052AFT(BJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 4X1 16TSSOP
Description: IC MUX/DEMUX DUAL 4X1 16TSSOP
товару немає в наявності
В кошику
од. на суму грн.
| DF2B5M4CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 260000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.59 грн |
| 20000+ | 2.16 грн |
| 30000+ | 2.07 грн |
| 50000+ | 1.82 грн |
| DF2B6M4CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.73 грн |
| 20000+ | 2.16 грн |
| DF2S5M4CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.6VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.45 грн |
| 20000+ | 2.29 грн |
| 30000+ | 2.25 грн |
| DF2S5M4SL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.50 грн |
| 20000+ | 2.07 грн |
| SSM3J355R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.83 грн |
| 6000+ | 5.96 грн |
| 9000+ | 5.64 грн |
| 15000+ | 4.96 грн |
| SSM3J358R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.17 грн |
| 6000+ | 5.59 грн |
| 9000+ | 4.96 грн |
| SSM3K344R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 10 V
Description: MOSFET N-CH 20V 3A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 10 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.40 грн |
| 6000+ | 6.46 грн |
| 9000+ | 6.12 грн |
| 15000+ | 5.39 грн |
| 21000+ | 5.18 грн |
| SSM3K35AFS,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 20V 250MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Description: MOSFET N-CHANNEL 20V 250MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.64 грн |
| SSM3K35AMFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 250MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Description: MOSFET N-CH 20V 250MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 1.54 грн |
| 16000+ | 1.47 грн |
| TCK301G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 18V (Max)
Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 18V (Max)
Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
товару немає в наявності
В кошику
од. на суму грн.
| TCK304G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 2.3V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled, Status Flag
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 2.3V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| TCK305G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TCR3DF15,LM(CT |
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.47V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
Description: IC REG LINEAR 1.5V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.47V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
товару немає в наявності
В кошику
од. на суму грн.
| TCR4DG35,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.5V 420MA 4-WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 420mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.26V @ 420mA
Protection Features: Over Current, Over Temperature, Short Circuit
Description: IC REG LINEAR 3.5V 420MA 4-WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 420mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 68 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.26V @ 420mA
Protection Features: Over Current, Over Temperature, Short Circuit
товару немає в наявності
В кошику
од. на суму грн.
| 74HCT4053D(BJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDT TRIPLE 16SOIC
Description: IC SWITCH SPDT TRIPLE 16SOIC
на замовлення 2828 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.83 грн |
| 10+ | 31.85 грн |
| 25+ | 29.09 грн |
| 100+ | 20.32 грн |
| 250+ | 18.41 грн |
| 500+ | 15.23 грн |
| 1000+ | 11.24 грн |
| 74LCX541FT(AJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
Description: IC BUF NON-INVERT 3.6V 20TSSOPB
товару немає в наявності
В кошику
од. на суму грн.
| 74LCX573FT(AJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
Description: X34 PB-F LCX TSSOP 20 CMOS LOGIC
на замовлення 1828 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 74VHC14FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
на замовлення 26924 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.41 грн |
| 25+ | 13.05 грн |
| 28+ | 11.61 грн |
| 100+ | 9.34 грн |
| 250+ | 8.60 грн |
| 500+ | 8.16 грн |
| 1000+ | 7.67 грн |
| 74VHC153FT(BJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER 2 X 4:1 16TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
Description: IC MULTIPLEXER 2 X 4:1 16TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Part Status: Active
на замовлення 3433 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.01 грн |
| 11+ | 29.17 грн |
| 25+ | 26.30 грн |
| 100+ | 17.04 грн |
| 250+ | 14.35 грн |
| 500+ | 11.66 грн |
| 1000+ | 8.82 грн |
| 74VHC4052AFT(BJ) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 4X1 16TSSOP
Description: IC MUX/DEMUX DUAL 4X1 16TSSOP
на замовлення 1648 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DF2B5M4CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 267390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.25 грн |
| 42+ | 7.63 грн |
| 100+ | 3.30 грн |
| 500+ | 2.91 грн |
| 1000+ | 2.66 грн |
| 2000+ | 2.63 грн |
| 5000+ | 2.55 грн |
| DF2B6M4CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 23640 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.25 грн |
| 42+ | 7.63 грн |
| 100+ | 3.98 грн |
| 500+ | 3.48 грн |
| 1000+ | 3.10 грн |
| 2000+ | 3.07 грн |
| 5000+ | 2.94 грн |
| DF2S5M4CT,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.6VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
на замовлення 121096 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.62 грн |
| 98+ | 3.22 грн |
| 130+ | 2.43 грн |
| 500+ | 2.21 грн |
| DF2S5M4SL,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
на замовлення 48876 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.43 грн |
| 43+ | 7.47 грн |
| 100+ | 3.39 грн |
| 500+ | 2.97 грн |
| 1000+ | 2.75 грн |
| 2000+ | 2.72 грн |
| 5000+ | 2.64 грн |
| SSM3J355R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V
на замовлення 28735 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.85 грн |
| 17+ | 18.56 грн |
| 100+ | 11.74 грн |
| 500+ | 8.23 грн |
| 1000+ | 7.33 грн |
| SSM3J358R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V
на замовлення 11285 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.76 грн |
| 19+ | 17.38 грн |
| 100+ | 11.88 грн |
| 500+ | 8.47 грн |
| 1000+ | 7.55 грн |
| SSM3K344R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 10 V
Description: MOSFET N-CH 20V 3A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 153 pF @ 10 V
на замовлення 24001 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.48 грн |
| 16+ | 20.13 грн |
| 100+ | 12.68 грн |
| 500+ | 8.90 грн |
| 1000+ | 7.93 грн |
| SSM3K35AFS,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 20V 250MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Description: MOSFET N-CHANNEL 20V 250MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
на замовлення 4984 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.88 грн |
| 38+ | 8.49 грн |
| 100+ | 3.51 грн |
| 500+ | 3.24 грн |
| SSM3K35AMFV,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 250MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Description: MOSFET N-CH 20V 250MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
на замовлення 150213 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.62 грн |
| 58+ | 5.43 грн |
| 136+ | 2.33 грн |
| TCK301G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 18V (Max)
Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 18V (Max)
Voltage - Supply (Vcc/Vdd): 2.3V ~ 28V
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
товару немає в наявності
В кошику
од. на суму грн.
| TCK304G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 2.3V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled, Status Flag
Package / Case: 9-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 73mOhm
Voltage - Load: 2.3V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 9-WCSP (1.5x1.5)
Fault Protection: Over Temperature, Over Voltage, Reverse Current, UVLO
Part Status: Active
на замовлення 420 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.41 грн |
| 10+ | 48.28 грн |
| 25+ | 43.56 грн |
| 100+ | 36.04 грн |
| 250+ | 33.72 грн |
| TCK305G,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
Description: IC PWR SWITCH N-CHAN 1:1 9WCSP
на замовлення 9966 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.














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