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PN120013 Toshiba Semiconductor and Storage Description: KIT MCU PROBE SET
товар відсутній
PN120065 PN120065 Toshiba Semiconductor and Storage Description: PACKAGE CONVERTER LQFP64
товар відсутній
LTA084C272F LTA084C272F Toshiba Semiconductor and Storage LTA084C272F-V06R.pdf Description: LCD 8.4 800X600 SVGA TOUCH CCFL
товар відсутній
LT084AC27500-0A000 LT084AC27500-0A000 Toshiba Semiconductor and Storage Description: LCD 8.4 800X600 SVGA W/TOUCH LED
товар відсутній
TB6582FG(O,EL) TB6582FG(O,EL) Toshiba Semiconductor and Storage TB6582FG.pdf Description: IC MOTOR CONTROLLER PAR 52QFP
товар відсутній
TB6582FG(O,EL) TB6582FG(O,EL) Toshiba Semiconductor and Storage TB6582FG.pdf Description: IC MOTOR CONTROLLER PAR 52QFP
товар відсутній
TLP748J(F) TLP748J(F) Toshiba Semiconductor and Storage TLP748J_datasheet_en_20190610.pdf?did=21807&prodName=TLP748J Description: OPTOISOLATOR 4KV SCR 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: SCR
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4000Vrms
Approval Agency: BSI, SEMKO, UR
Current - Hold (Ih): 1mA
Turn On Time: 15µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 5V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 150 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 16232 шт:
термін постачання 21-31 дні (днів)
3+127.96 грн
50+ 78.21 грн
100+ 57.88 грн
500+ 49.91 грн
1000+ 41.1 грн
2000+ 39.05 грн
5000+ 37.54 грн
10000+ 36.68 грн
Мінімальне замовлення: 3
TLP748J(D4,F) TLP748J(D4,F) Toshiba Semiconductor and Storage TLP748J_datasheet_en_20190610.pdf?did=21807&prodName=TLP748J Description: OPTOISOLATOR 4KV SCR 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: SCR
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4000Vrms
Approval Agency: BSI, SEMKO, UR, VDE
Current - Hold (Ih): 1mA
Turn On Time: 15µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 5V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 150 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
3+119.43 грн
50+ 72.95 грн
100+ 53.98 грн
500+ 46.55 грн
Мінімальне замовлення: 3
TLP748J(TP1,F) TLP748J(TP1,F) Toshiba Semiconductor and Storage TLP748J_datasheet_en_20190610.pdf?did=21807&prodName=TLP748J Description: OPTOISOLATOR 4KV SCR 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: SCR
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4000Vrms
Approval Agency: BSI, SEMKO, UR
Current - Hold (Ih): 1mA
Turn On Time: 15µs
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 5V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 150 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
1500+42.42 грн
3000+ 38.81 грн
Мінімальне замовлення: 1500
TLP748J(TP1,F) TLP748J(TP1,F) Toshiba Semiconductor and Storage TLP748J_datasheet_en_20190610.pdf?did=21807&prodName=TLP748J Description: OPTOISOLATOR 4KV SCR 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: SCR
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4000Vrms
Approval Agency: BSI, SEMKO, UR
Current - Hold (Ih): 1mA
Turn On Time: 15µs
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 5V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 150 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 4715 шт:
термін постачання 21-31 дні (днів)
3+119.43 грн
10+ 72.98 грн
100+ 53.98 грн
500+ 46.55 грн
Мінімальне замовлення: 3
2SK3128(Q) 2SK3128(Q) Toshiba Semiconductor and Storage 2sk3128ds.pdf Description: MOSFET N-CH 30V 60A TO-3PN
товар відсутній
2SA1201-Y(TE12L,CF 2SA1201-Y(TE12L,CF Toshiba Semiconductor and Storage 2SA1201.pdf Description: TRANS PNP 120V 0.8A SC-62
товар відсутній
2SA1225-Y(Q) 2SA1225-Y(Q) Toshiba Semiconductor and Storage Description: TRANS PNP 160V 1.5A PW-MOLD
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
товар відсутній
2SA1483-Y(F) 2SA1483-Y(F) Toshiba Semiconductor and Storage 2SA1483.pdf Description: TRANS PNP 45V 0.2A SC-62
товар відсутній
2SA1972(TE6,F,M) 2SA1972(TE6,F,M) Toshiba Semiconductor and Storage 2SA1972.pdf Description: TRANS PNP 400V 0.5A LSTM
товар відсутній
2SA1987-O(Q) 2SA1987-O(Q) Toshiba Semiconductor and Storage 2SA1987_datasheet_en_20131101.pdf?did=20438&prodName=2SA1987 Description: TRANS PNP 230V 15A TO3P
Packaging: Bulk
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
товар відсутній
2SA2069(TE12L,F) 2SA2069(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=20455&prodName=2SA2069 Description: TRANS PNP 20V 1.5A SC-62
товар відсутній
2SA2120-O(Q) 2SA2120-O(Q) Toshiba Semiconductor and Storage docget.jsp?did=10393&prodName=2SA2120 Description: TRANS PNP 200V 12A TO-3PN
товар відсутній
2SA2121-O(Q) Toshiba Semiconductor and Storage 2SA2121.pdf Description: TRANS PNP 200V 15A TO-3PL
товар відсутній
2SA965-Y(TE6,F,M) 2SA965-Y(TE6,F,M) Toshiba Semiconductor and Storage 2SA965.pdf Description: TRANS PNP 120V 0.8A TO-92
товар відсутній
2SB906-Y(TE16L1,NQ 2SB906-Y(TE16L1,NQ Toshiba Semiconductor and Storage 2SB906.pdf Description: TRANS PNP 60V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товар відсутній
2SC2235-O(TE6,F,M) 2SC2235-O(TE6,F,M) Toshiba Semiconductor and Storage 2SC2235_Rev2009.pdf Description: TRANS NPN 120V 0.8A TO-92
товар відсутній
2SC2655-Y(F,M) 2SC2655-Y(F,M) Toshiba Semiconductor and Storage 2SC2655.pdf Description: TRANS NPN 50V 2A TO-92
товар відсутній
2SC2705-Y(TE6,F,M) 2SC2705-Y(TE6,F,M) Toshiba Semiconductor and Storage 2SC2705_Rev2009.pdf Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
товар відсутній
2SC2881-Y(TE12L,CF 2SC2881-Y(TE12L,CF Toshiba Semiconductor and Storage docget.jsp?did=20777&prodName=2SC2881 Description: TRANS NPN 120V 0.8A SC-62
товар відсутній
2SC2983-Y(Q) 2SC2983-Y(Q) Toshiba Semiconductor and Storage 2SC2983.pdf Description: TRANS NPN 160V 1.5A PW-MOLD
товар відсутній
2SC3303-O(T6L1,NQ) 2SC3303-O(T6L1,NQ) Toshiba Semiconductor and Storage docget.jsp?did=20516&prodName=2SC3303 Description: TRANS NPN 80V 5A PW-MOLD
товар відсутній
2SC4690-O(F) 2SC4690-O(F) Toshiba Semiconductor and Storage 2SC4690.pdf Description: TRANS NPN 140V 10A TO-3PN
товар відсутній
2SC5174(TP,Q) Toshiba Semiconductor and Storage 2SC5174.pdf Description: TRANS NPN 230V 1A TPL
товар відсутній
2SC5354-1(F) 2SC5354-1(F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SC5354 Description: TRANS NPN 800V 5A TO-3PN
товар відсутній
2SC5359-O(Q) 2SC5359-O(Q) Toshiba Semiconductor and Storage 2SC5359_datasheet_en_20131101.pdf?did=20698&prodName=2SC5359 Description: TRANS NPN 230V 15A TO3P
Packaging: Bulk
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
2+218.25 грн
10+ 176.89 грн
100+ 143.08 грн
Мінімальне замовлення: 2
2SC5755(TE85L,F) 2SC5755(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20749&prodName=2SC5755 Description: TRANS NPN 10V 2A TSM
товар відсутній
2SC5784(TE85L,F) 2SC5784(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20751&prodName=2SC5784 Description: TRANS NPN 20V 1.5A TSM
товар відсутній
2SC5810(TE12L,F) 2SC5810(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=20755&prodName=2SC5810 Description: TRANS NPN 50V 1A SC-62
товар відсутній
2SC5819(TE12L,F) 2SC5819(TE12L,F) Toshiba Semiconductor and Storage docget.jsp?did=20758&prodName=2SC5819 Description: TRANS NPN 20V 1.5A SC-62
товар відсутній
2SC5948-O(Q) 2SC5948-O(Q) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SC5948 Description: TRANS NPN 200V 12A TO-3PN
товар відсутній
2SC5949-O(Q) Toshiba Semiconductor and Storage 2SC5949.pdf Description: TRANS NPN 200V 15A TO-3PL
товар відсутній
2SC6061(TE85L,F) 2SC6061(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=6330&prodName=2SC6061 Description: TRANS NPN 120V 1A TSM
товар відсутній
2SD1221-Y(Q) 2SD1221-Y(Q) Toshiba Semiconductor and Storage 2SD1221.pdf Description: TRANS NPN 60V 3A PW MOLD
товар відсутній
2SD2525(TP,Q) Toshiba Semiconductor and Storage 2SD2525.pdf Description: TRANS NPN 60V 3A TPL
товар відсутній
2SJ304(F) 2SJ304(F) Toshiba Semiconductor and Storage 2SJ304.pdf Description: MOSFET P-CH 60V 14A TO220NIS
товар відсутній
2SJ312(Q) Toshiba Semiconductor and Storage 2SJ312.pdf Description: MOSFET P-CH 60V 14A TO-220FL
товар відсутній
2SJ360(F) 2SJ360(F) Toshiba Semiconductor and Storage 2SJ360.pdf Description: MOSFET P-CH 60V 1A PW-MINI
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 730mOhm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PW-MINI
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
товар відсутній
2SJ360(TE12L,F) 2SJ360(TE12L,F) Toshiba Semiconductor and Storage 2SJ360.pdf Description: MOSFET P-CH 60V 1A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 730mOhm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PW-MINI
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
товар відсутній
2SJ378(TP,Q) Toshiba Semiconductor and Storage docget.jsp?pid=2SJ378&lang=en&type=datasheet Description: MOSFET P-CH 60V 5A TPS
товар відсутній
2SJ380(F) 2SJ380(F) Toshiba Semiconductor and Storage 2SJ380.pdf Description: MOSFET P-CH 100V 12A TO220NIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220NIS
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
товар відсутній
2SJ401(Q) Toshiba Semiconductor and Storage 2SJ401.pdf Description: MOSFET P-CH 60V 20A TO-220FL
товар відсутній
2SJ402(Q) Toshiba Semiconductor and Storage 2SJ402.pdf Description: MOSFET P-CH 60V 30A TO-220FL
товар відсутній
2SJ567(TE16L1,NQ) 2SJ567(TE16L1,NQ) Toshiba Semiconductor and Storage 2SJ567.pdf Description: MOSFET P-CH 200V 2.5A PW-MOLD
товар відсутній
2SJ610(TE16L1,NQ) 2SJ610(TE16L1,NQ) Toshiba Semiconductor and Storage 2SJ610.pdf Description: MOSFET P-CH 250V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 2.55Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 381 pF @ 10 V
товар відсутній
2SJ619(TE24L,Q) Toshiba Semiconductor and Storage 2SJ619.pdf Description: MOSFET P-CH 100V 16A SC-97
товар відсутній
2SJ681(Q) 2SJ681(Q) Toshiba Semiconductor and Storage 2SJ681.pdf Description: MOSFET P-CH 60V 5A PW-MOLD
товар відсутній
2SK1119(F) 2SK1119(F) Toshiba Semiconductor and Storage 2SK1119.pdf Description: MOSFET N-CH 1000V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товар відсутній
2SK1382(Q) Toshiba Semiconductor and Storage 2SK1382.pdf Description: MOSFET N-CH 100V 60A TO-3PL
товар відсутній
2SK1930(TE24L,Q) 2SK1930(TE24L,Q) Toshiba Semiconductor and Storage 2SK1930.pdf Description: MOSFET N-CH 1000V 4A TO220SM
товар відсутній
2SK2382(Q) 2SK2382(Q) Toshiba Semiconductor and Storage 2SK2382.pdf Description: MOSFET N-CH 200V 15A TO220NIS
товар відсутній
2SK2399(TE16L1,NQ) 2SK2399(TE16L1,NQ) Toshiba Semiconductor and Storage 2SK2399.pdf Description: MOSFET N-CH 100V 5A PW-MOLD
товар відсутній
2SK2507(F) 2SK2507(F) Toshiba Semiconductor and Storage 2SK2507_DS.pdf Description: MOSFET N-CH 50V 25A TO220NIS
товар відсутній
2SK2544(F) 2SK2544(F) Toshiba Semiconductor and Storage 2SK2544.pdf Description: MOSFET N-CH 600V 6A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
товар відсутній
2SK2614(TE16L1,Q) 2SK2614(TE16L1,Q) Toshiba Semiconductor and Storage 2SK2614.pdf Description: MOSFET N-CH 50V 20A DP
товар відсутній
PN120013
Виробник: Toshiba Semiconductor and Storage
Description: KIT MCU PROBE SET
товар відсутній
PN120065
PN120065
Виробник: Toshiba Semiconductor and Storage
Description: PACKAGE CONVERTER LQFP64
товар відсутній
LTA084C272F LTA084C272F-V06R.pdf
LTA084C272F
Виробник: Toshiba Semiconductor and Storage
Description: LCD 8.4 800X600 SVGA TOUCH CCFL
товар відсутній
LT084AC27500-0A000
LT084AC27500-0A000
Виробник: Toshiba Semiconductor and Storage
Description: LCD 8.4 800X600 SVGA W/TOUCH LED
товар відсутній
TB6582FG(O,EL) TB6582FG.pdf
TB6582FG(O,EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 52QFP
товар відсутній
TB6582FG(O,EL) TB6582FG.pdf
TB6582FG(O,EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 52QFP
товар відсутній
TLP748J(F) TLP748J_datasheet_en_20190610.pdf?did=21807&prodName=TLP748J
TLP748J(F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 4KV SCR 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: SCR
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4000Vrms
Approval Agency: BSI, SEMKO, UR
Current - Hold (Ih): 1mA
Turn On Time: 15µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 5V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 150 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 16232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+127.96 грн
50+ 78.21 грн
100+ 57.88 грн
500+ 49.91 грн
1000+ 41.1 грн
2000+ 39.05 грн
5000+ 37.54 грн
10000+ 36.68 грн
Мінімальне замовлення: 3
TLP748J(D4,F) TLP748J_datasheet_en_20190610.pdf?did=21807&prodName=TLP748J
TLP748J(D4,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 4KV SCR 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: SCR
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4000Vrms
Approval Agency: BSI, SEMKO, UR, VDE
Current - Hold (Ih): 1mA
Turn On Time: 15µs
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Static dV/dt (Min): 5V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 150 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+119.43 грн
50+ 72.95 грн
100+ 53.98 грн
500+ 46.55 грн
Мінімальне замовлення: 3
TLP748J(TP1,F) TLP748J_datasheet_en_20190610.pdf?did=21807&prodName=TLP748J
TLP748J(TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 4KV SCR 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: SCR
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4000Vrms
Approval Agency: BSI, SEMKO, UR
Current - Hold (Ih): 1mA
Turn On Time: 15µs
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 5V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 150 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+42.42 грн
3000+ 38.81 грн
Мінімальне замовлення: 1500
TLP748J(TP1,F) TLP748J_datasheet_en_20190610.pdf?did=21807&prodName=TLP748J
TLP748J(TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 4KV SCR 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: SCR
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4000Vrms
Approval Agency: BSI, SEMKO, UR
Current - Hold (Ih): 1mA
Turn On Time: 15µs
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Static dV/dt (Min): 5V/µs
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 150 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 4715 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+119.43 грн
10+ 72.98 грн
100+ 53.98 грн
500+ 46.55 грн
Мінімальне замовлення: 3
2SK3128(Q) 2sk3128ds.pdf
2SK3128(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 60A TO-3PN
товар відсутній
2SA1201-Y(TE12L,CF 2SA1201.pdf
2SA1201-Y(TE12L,CF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.8A SC-62
товар відсутній
2SA1225-Y(Q)
2SA1225-Y(Q)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 160V 1.5A PW-MOLD
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
товар відсутній
2SA1483-Y(F) 2SA1483.pdf
2SA1483-Y(F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 45V 0.2A SC-62
товар відсутній
2SA1972(TE6,F,M) 2SA1972.pdf
2SA1972(TE6,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 400V 0.5A LSTM
товар відсутній
2SA1987-O(Q) 2SA1987_datasheet_en_20131101.pdf?did=20438&prodName=2SA1987
2SA1987-O(Q)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 15A TO3P
Packaging: Bulk
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
товар відсутній
2SA2069(TE12L,F) docget.jsp?did=20455&prodName=2SA2069
2SA2069(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 1.5A SC-62
товар відсутній
2SA2120-O(Q) docget.jsp?did=10393&prodName=2SA2120
2SA2120-O(Q)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 200V 12A TO-3PN
товар відсутній
2SA2121-O(Q) 2SA2121.pdf
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 200V 15A TO-3PL
товар відсутній
2SA965-Y(TE6,F,M) 2SA965.pdf
2SA965-Y(TE6,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.8A TO-92
товар відсутній
2SB906-Y(TE16L1,NQ 2SB906.pdf
2SB906-Y(TE16L1,NQ
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 60V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
товар відсутній
2SC2235-O(TE6,F,M) 2SC2235_Rev2009.pdf
2SC2235-O(TE6,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.8A TO-92
товар відсутній
2SC2655-Y(F,M) 2SC2655.pdf
2SC2655-Y(F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2A TO-92
товар відсутній
2SC2705-Y(TE6,F,M) 2SC2705_Rev2009.pdf
2SC2705-Y(TE6,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
товар відсутній
2SC2881-Y(TE12L,CF docget.jsp?did=20777&prodName=2SC2881
2SC2881-Y(TE12L,CF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.8A SC-62
товар відсутній
2SC2983-Y(Q) 2SC2983.pdf
2SC2983-Y(Q)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 160V 1.5A PW-MOLD
товар відсутній
2SC3303-O(T6L1,NQ) docget.jsp?did=20516&prodName=2SC3303
2SC3303-O(T6L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 5A PW-MOLD
товар відсутній
2SC4690-O(F) 2SC4690.pdf
2SC4690-O(F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 140V 10A TO-3PN
товар відсутній
2SC5174(TP,Q) 2SC5174.pdf
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 1A TPL
товар відсутній
2SC5354-1(F) docget.jsp?type=datasheet&lang=en&pid=2SC5354
2SC5354-1(F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 800V 5A TO-3PN
товар відсутній
2SC5359-O(Q) 2SC5359_datasheet_en_20131101.pdf?did=20698&prodName=2SC5359
2SC5359-O(Q)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 230V 15A TO3P
Packaging: Bulk
Package / Case: TO-3PL
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(L)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 180 W
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+218.25 грн
10+ 176.89 грн
100+ 143.08 грн
Мінімальне замовлення: 2
2SC5755(TE85L,F) docget.jsp?did=20749&prodName=2SC5755
2SC5755(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 10V 2A TSM
товар відсутній
2SC5784(TE85L,F) docget.jsp?did=20751&prodName=2SC5784
2SC5784(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 1.5A TSM
товар відсутній
2SC5810(TE12L,F) docget.jsp?did=20755&prodName=2SC5810
2SC5810(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 1A SC-62
товар відсутній
2SC5819(TE12L,F) docget.jsp?did=20758&prodName=2SC5819
2SC5819(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 1.5A SC-62
товар відсутній
2SC5948-O(Q) docget.jsp?type=datasheet&lang=en&pid=2SC5948
2SC5948-O(Q)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 12A TO-3PN
товар відсутній
2SC5949-O(Q) 2SC5949.pdf
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 200V 15A TO-3PL
товар відсутній
2SC6061(TE85L,F) docget.jsp?did=6330&prodName=2SC6061
2SC6061(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 1A TSM
товар відсутній
2SD1221-Y(Q) 2SD1221.pdf
2SD1221-Y(Q)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 60V 3A PW MOLD
товар відсутній
2SD2525(TP,Q) 2SD2525.pdf
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 60V 3A TPL
товар відсутній
2SJ304(F) 2SJ304.pdf
2SJ304(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 14A TO220NIS
товар відсутній
2SJ312(Q) 2SJ312.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 14A TO-220FL
товар відсутній
2SJ360(F) 2SJ360.pdf
2SJ360(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 1A PW-MINI
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 730mOhm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PW-MINI
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
товар відсутній
2SJ360(TE12L,F) 2SJ360.pdf
2SJ360(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 1A PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 730mOhm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PW-MINI
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
товар відсутній
2SJ378(TP,Q) docget.jsp?pid=2SJ378&lang=en&type=datasheet
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 5A TPS
товар відсутній
2SJ380(F) 2SJ380.pdf
2SJ380(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 100V 12A TO220NIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220NIS
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
товар відсутній
2SJ401(Q) 2SJ401.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 20A TO-220FL
товар відсутній
2SJ402(Q) 2SJ402.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A TO-220FL
товар відсутній
2SJ567(TE16L1,NQ) 2SJ567.pdf
2SJ567(TE16L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 200V 2.5A PW-MOLD
товар відсутній
2SJ610(TE16L1,NQ) 2SJ610.pdf
2SJ610(TE16L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 250V 2A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 2.55Ohm @ 1A, 10V
Power Dissipation (Max): 20W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PW-MOLD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 381 pF @ 10 V
товар відсутній
2SJ619(TE24L,Q) 2SJ619.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 100V 16A SC-97
товар відсутній
2SJ681(Q) 2SJ681.pdf
2SJ681(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 5A PW-MOLD
товар відсутній
2SK1119(F) 2SK1119.pdf
2SK1119(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 1000V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 3.8Ohm @ 2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товар відсутній
2SK1382(Q) 2SK1382.pdf
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 60A TO-3PL
товар відсутній
2SK1930(TE24L,Q) 2SK1930.pdf
2SK1930(TE24L,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 1000V 4A TO220SM
товар відсутній
2SK2382(Q) 2SK2382.pdf
2SK2382(Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 15A TO220NIS
товар відсутній
2SK2399(TE16L1,NQ) 2SK2399.pdf
2SK2399(TE16L1,NQ)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 5A PW-MOLD
товар відсутній
2SK2507(F) 2SK2507_DS.pdf
2SK2507(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 50V 25A TO220NIS
товар відсутній
2SK2544(F) 2SK2544.pdf
2SK2544(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
товар відсутній
2SK2614(TE16L1,Q) 2SK2614.pdf
2SK2614(TE16L1,Q)
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 50V 20A DP
товар відсутній
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