Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 44 з 226
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1SV324TPH3F | Toshiba Semiconductor and Storage |
Description: DIODE VARACTOR 10V SINGLE USCPart Status: Active Supplier Device Package: USC Capacitance Ratio Condition: C1/C4 Capacitance @ Vr, F: 12pF @ 4V, 1MHz Operating Temperature: 125°C (TJ) Diode Type: Single Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) Capacitance Ratio: 4.3 Voltage - Peak Reverse (Max): 10 V |
на замовлення 2435 шт: термін постачання 21-31 дні (днів) |
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DF2S6.8CT(TPL3) | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM CST2 |
на замовлення 2074 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1102T5LFT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMCurrent - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1104T5LFT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 0.1W SSM |
на замовлення 1340 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN1106T5LFT | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 100MA SSM |
на замовлення 925 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN2118MFV(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 0.15W VESM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN2119MFV(TPL3) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 0.15W VESM |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN2308(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A SC70Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 200 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 2841 шт: термін постачання 21-31 дні (днів) |
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RN2315TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V 0.1A USM |
на замовлення 4150 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN2412TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 0.2W SMINI |
на замовлення 2849 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RN2413TE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 0.2W SMINI |
на замовлення 2850 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SSM3J36FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 330MA SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V |
на замовлення 320020 шт: термін постачання 21-31 дні (днів) |
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SSM3K36FS(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: MOSF N CHANNEL 20V500MA SSM |
на замовлення 2264 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TA75S393F,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 1 GEN PUR SMVPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: CMOS, DTL, MOS, Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 1 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: SMV Current - Quiescent (Max): 800µA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.05µA @ 5V Current - Output (Typ): 16mA @ 5V Part Status: Active |
на замовлення 94227 шт: термін постачання 21-31 дні (днів) |
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TA75S558F,LF | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT SMVNumber of Circuits: 1 Part Status: Active Supplier Device Package: SMV Voltage - Input Offset: 500 µV Current - Input Bias: 60 nA Gain Bandwidth Product: 3 MHz Slew Rate: 1V/µs Current - Supply: 2.5mA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 36 V Voltage - Supply Span (Min): 8 V Current - Output / Channel: 40 mA |
на замовлення 2003 шт: термін постачання 21-31 дні (днів) |
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TA75W01FU,LF | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 2 CIRCUIT 8SSOPVoltage - Supply Span (Max): 12 V Voltage - Supply Span (Min): 3 V Current - Output / Channel: 40 mA Number of Circuits: 2 Supplier Device Package: 8-SSOP Voltage - Input Offset: 2 mV Current - Input Bias: 45 nA Gain Bandwidth Product: 300 kHz Current - Supply: 700µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Cut Tape (CT) |
на замовлення 5670 шт: термін постачання 21-31 дні (днів) |
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TA75W393FU,LF | Toshiba Semiconductor and Storage |
Description: IC COMPARATOR 2 GEN PUR 8SSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: CMOS, DTL, MOS, Open-Collector, TTL Mounting Type: Surface Mount Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 85°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-SSOP Current - Quiescent (Max): 2mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16nA @ 5V |
на замовлення 35484 шт: термін постачання 21-31 дні (днів) |
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TA75W558FU,LF | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 2 CIRCUIT SM8 |
на замовлення 6941 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC4S11FT5LFT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP SMVCurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Input Logic Level - Low: 1.5V ~ 4V Input Logic Level - High: 3.5V ~ 11V Supplier Device Package: SMV Number of Inputs: 2 Current - Output High, Low: 3.4mA, 3.4mA Voltage - Supply: 3V ~ 18V Operating Temperature: -40°C ~ 85°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC4SU69FT5LFT | Toshiba Semiconductor and Storage |
Description: IC GATE INVERTER SGL SSOP5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC4W53FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX DUAL 1X1 8SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC4W66FU,LF | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPST-NOX2 160OHM 8SSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 160Ohm -3db Bandwidth: 30MHz Supplier Device Package: 8-SSOP Voltage - Supply, Single (V+): 3V ~ 18V Crosstalk: -50dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 4Ohm Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 2 |
на замовлення 49100 шт: термін постачання 21-31 дні (днів) |
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TC75S101F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT SMVVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.5 V Current - Output / Channel: 1.5 mA Number of Circuits: 1 Supplier Device Package: SMV Voltage - Input Offset: 1.2 mV Current - Input Bias: 0.1 pA Slew Rate: 0.15V/µs Current - Supply: 63µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 1821 шт: термін постачання 21-31 дні (днів) |
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TC75S51F,LF | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT SMVVoltage - Supply Span (Max): 7 V Voltage - Supply Span (Min): 1.5 V Number of Circuits: 1 Part Status: Active Supplier Device Package: SMV Voltage - Input Offset: 2 mV Current - Input Bias: 1 pA Slew Rate: 0.5V/µs Current - Supply: 60µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC75S51FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 5SSOP |
на замовлення 3468 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7S02FUT5LFT | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP USV |
на замовлення 1847 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7S04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOPInput Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 5-SSOP Number of Inputs: 1 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF |
на замовлення 48464 шт: термін постачання 21-31 дні (днів) |
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TC7SH86F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP SMVCurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Input Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: SMV Number of Inputs: 2 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 5840 шт: термін постачання 21-31 дні (днів) |
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TC7S86FUT5LFT | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP 5SSOP Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Input Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 5-SSOP Number of Inputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SH04FUT5LJFT | Toshiba Semiconductor and Storage |
Description: IC INVERTER SNGL USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SH14FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 1CH 1INP 5SSOPCurrent - Quiescent (Max): 2 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Input Logic Level - Low: 0.9V ~ 1.65V Input Logic Level - High: 2.2V ~ 3.85V Supplier Device Package: 5-SSOP Number of Inputs: 1 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Features: Schmitt Trigger Packaging: Cut Tape (CT) |
на замовлення 55405 шт: термін постачання 21-31 дні (днів) |
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TC7W14FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 3CH 3INP 8SSOPPackaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 3 Supplier Device Package: 8-SSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.5V Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 1 µA |
на замовлення 11385 шт: термін постачання 21-31 дні (днів) |
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TC7W241FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 6V SM8 |
на замовлення 2271 шт: термін постачання 21-31 дні (днів) |
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TC7W53FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 1X2 8SSOP |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7WT126FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V SM8 |
на замовлення 1126 шт: термін постачання 21-31 дні (днів) |
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TC7WT240FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER INVERT 5.5V SM8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7WT241FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC BUS BUFFER TRI-ST N-INV SM8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7WT74FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC FLIP FLOP D PRESET/CLR 8SSOP |
на замовлення 2120 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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1SS196(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 80V 100MA SC593Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-59-3 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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1SS190TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 80V 100MA SC59-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-59-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 41585 шт: термін постачання 21-31 дні (днів) |
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1SS302TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS306TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 200V 100MA SC-61BCurrent - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-61B Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Independent Reverse Recovery Time (trr): 60 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-61AA Packaging: Cut Tape (CT) Technology: Standard |
на замовлення 9913 шт: термін постачання 21-31 дні (днів) |
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1SS362TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: SSM Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 17157 шт: термін постачання 21-31 дні (днів) |
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1SS367,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 14670 шт: термін постачання 21-31 дні (днів) |
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1SS370TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 100MA SC70 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-70 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 60 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS379,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC59Current - Reverse Leakage @ Vr: 10 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-59 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 29956 шт: термін постачання 21-31 дні (днів) |
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1SS382TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GEN PURP 80V 100MAPackaging: Cut Tape (CT) Package / Case: SC-82 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 4344 шт: термін постачання 21-31 дні (днів) |
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1SS384TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTT 10V 100MA USQCurrent - Reverse Leakage @ Vr: 20 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 10 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: USQ Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Independent Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-82 Packaging: Cut Tape (CT) |
на замовлення 10311 шт: термін постачання 21-31 дні (днів) |
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1SS394TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA SC59Current - Reverse Leakage @ Vr: 20 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 10 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-59 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 40pF @ 0V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 5619 шт: термін постачання 21-31 дні (днів) |
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1SS397TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 100MA SC70Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-70 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS398TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 400V 100MA S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 500 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 400 V |
на замовлення 33243 шт: термін постачання 21-31 дні (днів) |
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1SS399TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 400V 100MA SC61B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS402TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTT 20V 50MA USQPackaging: Cut Tape (CT) Package / Case: SC-82 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 50mA Supplier Device Package: USQ Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
на замовлення 17305 шт: термін постачання 21-31 дні (днів) |
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1SS404,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 300MA USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 46pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA Current - Reverse Leakage @ Vr: 50 µA @ 20 V |
на замовлення 51080 шт: термін постачання 21-31 дні (днів) |
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2SA1163-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
на замовлення 1710 шт: термін постачання 21-31 дні (днів) |
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2SA1587-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SC-70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 100 mW |
на замовлення 17936 шт: термін постачання 21-31 дні (днів) |
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2SA1954BTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.5A SC-70 Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SC-70 Frequency - Transition: 130MHz Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 125°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1955FVATPL3Z | Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.4A CST3Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 400 mA Part Status: Obsolete Supplier Device Package: CST3 Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) |
на замовлення 2222 шт: термін постачання 21-31 дні (днів) |
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2SA1955FVBTPL3Z | Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.4A VESMFrequency - Transition: 130MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 400 mA Part Status: Obsolete Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 2690 шт: термін постачання 21-31 дні (днів) |
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2SC2712-OTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A TO-236Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: TO-236 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 13879 шт: термін постачання 21-31 дні (днів) |
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| 1SV324TPH3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V SINGLE USC
Part Status: Active
Supplier Device Package: USC
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Capacitance Ratio: 4.3
Voltage - Peak Reverse (Max): 10 V
Description: DIODE VARACTOR 10V SINGLE USC
Part Status: Active
Supplier Device Package: USC
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Capacitance Ratio: 4.3
Voltage - Peak Reverse (Max): 10 V
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.48 грн |
| 18+ | 17.14 грн |
| 100+ | 11.92 грн |
| 500+ | 8.37 грн |
| 1000+ | 7.46 грн |
| DF2S6.8CT(TPL3) |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST2
Description: TVS DIODE 5VWM CST2
на замовлення 2074 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN1102T5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
товару немає в наявності
В кошику
од. на суму грн.
| RN1104T5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
на замовлення 1340 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN1106T5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 100MA SSM
Description: TRANS NPN 50V 100MA SSM
на замовлення 925 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN2118MFV(TPL3) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.15W VESM
Description: TRANS PREBIAS PNP 0.15W VESM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN2119MFV(TPL3) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.15W VESM
Description: TRANS PREBIAS PNP 0.15W VESM
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN2308(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 2841 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 41+ | 7.47 грн |
| 100+ | 5.00 грн |
| 500+ | 3.57 грн |
| 1000+ | 3.20 грн |
| RN2315TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A USM
Description: TRANS PREBIAS PNP 50V 0.1A USM
на замовлення 4150 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN2412TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.2W SMINI
Description: TRANS PREBIAS PNP 0.2W SMINI
на замовлення 2849 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RN2413TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.2W SMINI
Description: TRANS PREBIAS PNP 0.2W SMINI
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SSM3J36FS,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 330MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Description: MOSFET P-CH 20V 330MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
на замовлення 320020 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.41 грн |
| 31+ | 10.06 грн |
| 100+ | 6.25 грн |
| 500+ | 4.29 грн |
| 1000+ | 3.79 грн |
| SSM3K36FS(T5L,F,T) |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSF N CHANNEL 20V500MA SSM
Description: MOSF N CHANNEL 20V500MA SSM
на замовлення 2264 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TA75S393F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: CMOS, DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SMV
Current - Quiescent (Max): 800µA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Description: IC COMPARATOR 1 GEN PUR SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: CMOS, DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SMV
Current - Quiescent (Max): 800µA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.05µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
на замовлення 94227 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 19.78 грн |
| 24+ | 12.95 грн |
| 27+ | 11.52 грн |
| 100+ | 9.29 грн |
| 250+ | 8.56 грн |
| 500+ | 8.12 грн |
| 1000+ | 7.63 грн |
| TA75S558F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMV
Voltage - Input Offset: 500 µV
Current - Input Bias: 60 nA
Gain Bandwidth Product: 3 MHz
Slew Rate: 1V/µs
Current - Supply: 2.5mA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 8 V
Current - Output / Channel: 40 mA
Description: IC OPAMP GP 1 CIRCUIT SMV
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMV
Voltage - Input Offset: 500 µV
Current - Input Bias: 60 nA
Gain Bandwidth Product: 3 MHz
Slew Rate: 1V/µs
Current - Supply: 2.5mA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 8 V
Current - Output / Channel: 40 mA
на замовлення 2003 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.98 грн |
| 11+ | 29.86 грн |
| 25+ | 27.34 грн |
| 100+ | 19.09 грн |
| 250+ | 17.30 грн |
| 500+ | 14.32 грн |
| 1000+ | 10.56 грн |
| TA75W01FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 2 CIRCUIT 8SSOP
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Gain Bandwidth Product: 300 kHz
Current - Supply: 700µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Description: IC OPAMP GP 2 CIRCUIT 8SSOP
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Supplier Device Package: 8-SSOP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Gain Bandwidth Product: 300 kHz
Current - Supply: 700µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
на замовлення 5670 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| 12+ | 25.83 грн |
| 25+ | 24.11 грн |
| 100+ | 18.10 грн |
| 250+ | 16.81 грн |
| 500+ | 14.23 грн |
| 1000+ | 10.81 грн |
| TA75W393FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: CMOS, DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SSOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16nA @ 5V
Description: IC COMPARATOR 2 GEN PUR 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: CMOS, DTL, MOS, Open-Collector, TTL
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SSOP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16nA @ 5V
на замовлення 35484 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.94 грн |
| 20+ | 15.24 грн |
| 25+ | 13.53 грн |
| 100+ | 10.93 грн |
| 250+ | 10.10 грн |
| 500+ | 9.59 грн |
| 1000+ | 9.03 грн |
| TA75W558FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 2 CIRCUIT SM8
Description: IC OPAMP GP 2 CIRCUIT SM8
на замовлення 6941 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TC4S11FT5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Input Logic Level - Low: 1.5V ~ 4V
Input Logic Level - High: 3.5V ~ 11V
Supplier Device Package: SMV
Number of Inputs: 2
Current - Output High, Low: 3.4mA, 3.4mA
Voltage - Supply: 3V ~ 18V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC GATE NAND 1CH 2-INP SMV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Input Logic Level - Low: 1.5V ~ 4V
Input Logic Level - High: 3.5V ~ 11V
Supplier Device Package: SMV
Number of Inputs: 2
Current - Output High, Low: 3.4mA, 3.4mA
Voltage - Supply: 3V ~ 18V
Operating Temperature: -40°C ~ 85°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TC4SU69FT5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE INVERTER SGL SSOP5
Description: IC GATE INVERTER SGL SSOP5
товару немає в наявності
В кошику
од. на суму грн.
| TC4W53FUTE12LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 1X1 8SSOP
Description: IC MUX/DEMUX DUAL 1X1 8SSOP
товару немає в наявності
В кошику
од. на суму грн.
| TC4W66FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NOX2 160OHM 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Description: IC SWITCH SPST-NOX2 160OHM 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
на замовлення 49100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.99 грн |
| 25+ | 12.49 грн |
| 28+ | 11.03 грн |
| 100+ | 8.87 грн |
| 250+ | 8.17 грн |
| 500+ | 7.74 грн |
| 1000+ | 7.27 грн |
| TC75S101F(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 1.5 mA
Number of Circuits: 1
Supplier Device Package: SMV
Voltage - Input Offset: 1.2 mV
Current - Input Bias: 0.1 pA
Slew Rate: 0.15V/µs
Current - Supply: 63µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC OPAMP GP 1 CIRCUIT SMV
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 1.5 mA
Number of Circuits: 1
Supplier Device Package: SMV
Voltage - Input Offset: 1.2 mV
Current - Input Bias: 0.1 pA
Slew Rate: 0.15V/µs
Current - Supply: 63µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 1821 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.56 грн |
| 10+ | 32.68 грн |
| 25+ | 30.66 грн |
| 100+ | 26.05 грн |
| 250+ | 24.39 грн |
| 500+ | 23.20 грн |
| 1000+ | 21.66 грн |
| TC75S51F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMV
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.5V/µs
Current - Supply: 60µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC OPAMP GP 1 CIRCUIT SMV
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMV
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.5V/µs
Current - Supply: 60µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TC75S51FU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 5SSOP
Description: IC OPAMP GP 5SSOP
на замовлення 3468 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TC7S02FUT5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP USV
Description: IC GATE NOR 1CH 2-INP USV
на замовлення 1847 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TC7S04FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Description: IC INVERTER 1CH 1-INP 5SSOP
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
на замовлення 48464 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.44 грн |
| 14+ | 23.31 грн |
| 25+ | 20.45 грн |
| 100+ | 12.41 грн |
| 250+ | 10.28 грн |
| 500+ | 8.22 грн |
| 1000+ | 6.20 грн |
| TC7SH86F,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP SMV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SMV
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC GATE XOR 1CH 2-INP SMV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SMV
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 5840 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.02 грн |
| 13+ | 24.61 грн |
| 25+ | 21.55 грн |
| 100+ | 13.08 грн |
| 250+ | 10.83 грн |
| 500+ | 8.67 грн |
| 1000+ | 6.53 грн |
| TC7S86FUT5LFT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP 5SSOP
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
Description: IC GATE XOR 1CH 2-INP 5SSOP
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
товару немає в наявності
В кошику
од. на суму грн.
| TC7SH04FUT5LJFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER SNGL USV
Description: IC INVERTER SNGL USV
товару немає в наявності
В кошику
од. на суму грн.
| TC7SH14FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
на замовлення 55405 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.36 грн |
| 26+ | 12.04 грн |
| 31+ | 9.84 грн |
| 100+ | 6.86 грн |
| 250+ | 5.68 грн |
| 500+ | 4.96 грн |
| 1000+ | 4.28 грн |
| TC7W14FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 3CH 3INP 8SSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 3CH 3INP 8SSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
на замовлення 11385 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.61 грн |
| 28+ | 11.20 грн |
| 31+ | 9.90 грн |
| 100+ | 7.96 грн |
| 250+ | 7.32 грн |
| 500+ | 6.94 грн |
| 1000+ | 6.52 грн |
| TC7W241FUTE12LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V SM8
Description: IC BUFFER NON-INVERT 6V SM8
на замовлення 2271 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.44 грн |
| 12+ | 26.74 грн |
| 25+ | 24.96 грн |
| 100+ | 18.73 грн |
| 250+ | 17.39 грн |
| 500+ | 14.71 грн |
| 1000+ | 11.18 грн |
| TC7W53FUTE12LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1X2 8SSOP
Description: IC MUX/DEMUX 1X2 8SSOP
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TC7WT126FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SM8
Description: IC BUFFER NON-INVERT 5.5V SM8
на замовлення 1126 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.23 грн |
| 12+ | 26.06 грн |
| 25+ | 23.83 грн |
| 100+ | 16.64 грн |
| 250+ | 15.09 грн |
| 500+ | 12.48 грн |
| 1000+ | 9.21 грн |
| TC7WT240FUTE12LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V SM8
Description: IC BUFFER INVERT 5.5V SM8
товару немає в наявності
В кошику
од. на суму грн.
| TC7WT241FUTE12LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS BUFFER TRI-ST N-INV SM8
Description: IC BUS BUFFER TRI-ST N-INV SM8
товару немає в наявності
В кошику
од. на суму грн.
| TC7WT74FUTE12LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FLIP FLOP D PRESET/CLR 8SSOP
Description: IC FLIP FLOP D PRESET/CLR 8SSOP
на замовлення 2120 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 1SS196(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SC593
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59-3
Description: DIODE STANDARD 80V 100MA SC593
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59-3
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 1SS190TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 100MA SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 41585 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.53 грн |
| 19+ | 16.46 грн |
| 100+ | 8.02 грн |
| 500+ | 6.28 грн |
| 1000+ | 4.36 грн |
| 1SS302TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| 1SS306TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 100MA SC-61B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Cut Tape (CT)
Technology: Standard
Description: DIODE ARRAY GP 200V 100MA SC-61B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Cut Tape (CT)
Technology: Standard
на замовлення 9913 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 123.42 грн |
| 10+ | 73.14 грн |
| 100+ | 49.17 грн |
| 1SS362TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 17157 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.41 грн |
| 30+ | 10.36 грн |
| 100+ | 6.45 грн |
| 500+ | 4.43 грн |
| 1000+ | 3.91 грн |
| 1SS367,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 14670 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.45 грн |
| 39+ | 7.92 грн |
| 100+ | 4.88 грн |
| 500+ | 3.33 грн |
| 1000+ | 2.92 грн |
| 1SS370TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 1SS379,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC59
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA SC59
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 29956 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.27 грн |
| 17+ | 18.44 грн |
| 100+ | 12.48 грн |
| 500+ | 9.10 грн |
| 1000+ | 8.23 грн |
| 1SS382TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 4344 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.27 грн |
| 18+ | 17.07 грн |
| 100+ | 10.73 грн |
| 500+ | 7.50 грн |
| 1000+ | 6.67 грн |
| 1SS384TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USQ
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USQ
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82
Packaging: Cut Tape (CT)
на замовлення 10311 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.15 грн |
| 23+ | 13.56 грн |
| 100+ | 8.62 грн |
| 500+ | 6.71 грн |
| 1000+ | 5.99 грн |
| 1SS394TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA SC59
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 10V 100MA SC59
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 5619 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 31+ | 9.98 грн |
| 100+ | 7.37 грн |
| 500+ | 5.10 грн |
| 1000+ | 4.51 грн |
| 1SS397TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 400V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 1SS398TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
на замовлення 33243 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.86 грн |
| 17+ | 18.67 грн |
| 100+ | 13.01 грн |
| 500+ | 9.83 грн |
| 1000+ | 8.79 грн |
| 1SS399TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA SC61B
Description: DIODE ARRAY GP 400V 100MA SC61B
товару немає в наявності
В кошику
од. на суму грн.
| 1SS402TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
на замовлення 17305 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 29.27 грн |
| 18+ | 17.37 грн |
| 100+ | 10.91 грн |
| 500+ | 7.63 грн |
| 1000+ | 6.78 грн |
| 1SS404,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
на замовлення 51080 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.08 грн |
| 48+ | 6.40 грн |
| 100+ | 4.50 грн |
| 500+ | 3.08 грн |
| 1000+ | 2.70 грн |
| 2SA1163-GR,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
на замовлення 1710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.41 грн |
| 30+ | 10.29 грн |
| 100+ | 6.40 грн |
| 500+ | 4.41 грн |
| 1000+ | 3.89 грн |
| 2SA1587-GR,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
на замовлення 17936 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.24 грн |
| 36+ | 8.61 грн |
| 100+ | 5.30 грн |
| 500+ | 3.63 грн |
| 1000+ | 3.20 грн |
| 2SA1954BTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Frequency - Transition: 130MHz
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Frequency - Transition: 130MHz
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1955FVATPL3Z |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 400 mA
Part Status: Obsolete
Supplier Device Package: CST3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Description: TRANS PNP 12V 0.4A CST3
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 400 mA
Part Status: Obsolete
Supplier Device Package: CST3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
на замовлення 2222 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.24 грн |
| 35+ | 8.84 грн |
| 100+ | 6.19 грн |
| 500+ | 4.81 грн |
| 1000+ | 4.50 грн |
| 2000+ | 4.24 грн |
| 2SA1955FVBTPL3Z |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A VESM
Frequency - Transition: 130MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 400 mA
Part Status: Obsolete
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS PNP 12V 0.4A VESM
Frequency - Transition: 130MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 400 mA
Part Status: Obsolete
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 2690 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 34+ | 9.22 грн |
| 100+ | 7.82 грн |
| 500+ | 6.54 грн |
| 1000+ | 6.22 грн |
| 2000+ | 5.92 грн |
| 2SC2712-OTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 0.15A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 13879 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 42+ | 7.39 грн |
| 100+ | 4.56 грн |
| 500+ | 3.11 грн |
| 1000+ | 2.73 грн |





















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