Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13580) > Сторінка 44 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TC75S101F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT SMVVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.5 V Current - Output / Channel: 1.5 mA Number of Circuits: 1 Supplier Device Package: SMV Voltage - Input Offset: 1.2 mV Current - Input Bias: 0.1 pA Slew Rate: 0.15V/µs Current - Supply: 63µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 1821 шт: термін постачання 21-31 дні (днів) |
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TC75S51F,LF | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 1 CIRCUIT SMVVoltage - Supply Span (Max): 7 V Voltage - Supply Span (Min): 1.5 V Number of Circuits: 1 Part Status: Active Supplier Device Package: SMV Voltage - Input Offset: 2 mV Current - Input Bias: 1 pA Slew Rate: 0.5V/µs Current - Supply: 60µA Operating Temperature: -40°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 5293 шт: термін постачання 21-31 дні (днів) |
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TC75S51FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: IC OPAMP GP 5SSOP |
на замовлення 3468 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7S02FUT5LFT | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP USV |
на замовлення 1847 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7S04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 1CH 1-INP 5SSOPInput Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 5-SSOP Number of Inputs: 1 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF |
на замовлення 48464 шт: термін постачання 21-31 дні (днів) |
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TC7SH86F,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP SMVCurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Input Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: SMV Number of Inputs: 2 Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 6638 шт: термін постачання 21-31 дні (днів) |
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TC7S86FUT5LFT | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP 5SSOP Current - Output High, Low: 2.6mA, 2.6mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Input Logic Level - Low: 0.5V ~ 1.8V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 5-SSOP Number of Inputs: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SH04FUT5LJFT | Toshiba Semiconductor and Storage |
Description: IC INVERTER SNGL USV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SH14FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 1CH 1INP 5SSOPCurrent - Quiescent (Max): 2 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Input Logic Level - Low: 0.9V ~ 1.65V Input Logic Level - High: 2.2V ~ 3.85V Supplier Device Package: 5-SSOP Number of Inputs: 1 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Features: Schmitt Trigger Packaging: Cut Tape (CT) |
на замовлення 2029 шт: термін постачання 21-31 дні (днів) |
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TC7W14FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 3CH 3INP 8SSOPPackaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 3 Supplier Device Package: 8-SSOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.5V Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 1 µA |
на замовлення 5333 шт: термін постачання 21-31 дні (днів) |
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TC7W241FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 6V SM8 |
на замовлення 2271 шт: термін постачання 21-31 дні (днів) |
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TC7W53FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 1X2 8SSOP |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TC7WT126FU,LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 5.5V SM8 |
на замовлення 1126 шт: термін постачання 21-31 дні (днів) |
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TC7WT240FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC BUFFER INVERT 5.5V SM8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7WT241FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC BUS BUFFER TRI-ST N-INV SM8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7WT74FUTE12LF | Toshiba Semiconductor and Storage |
Description: IC FLIP FLOP D PRESET/CLR 8SSOP |
на замовлення 2120 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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1SS196(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 80V 100MA SC593Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-59-3 |
на замовлення 6135 шт: термін постачання 21-31 дні (днів) |
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1SS190TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 80V 100MA SC593Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SC-59-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 30589 шт: термін постачання 21-31 дні (днів) |
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1SS302TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SC-70 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS306TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 200V 100MA SC-61BCurrent - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-61B Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Independent Reverse Recovery Time (trr): 60 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-61AA Packaging: Cut Tape (CT) Technology: Standard |
на замовлення 9913 шт: термін постачання 21-31 дні (днів) |
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1SS362TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 80MA SSMPackaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 80mA Supplier Device Package: SSM Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 14409 шт: термін постачання 21-31 дні (днів) |
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1SS367,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 10 V |
на замовлення 31424 шт: термін постачання 21-31 дні (днів) |
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1SS370TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 100MA SC70 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-70 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 60 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS379,LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SC59Current - Reverse Leakage @ Vr: 10 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-59 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 29956 шт: термін постачання 21-31 дні (днів) |
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| 1SS382TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GEN PURP 80V 100MA Packaging: Cut Tape (CT) Package / Case: SC-82 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
на замовлення 18925 шт: термін постачання 21-31 дні (днів) |
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1SS384TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTT 10V 100MA USQCurrent - Reverse Leakage @ Vr: 20 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 10 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: USQ Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Independent Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-82 Packaging: Cut Tape (CT) |
на замовлення 10311 шт: термін постачання 21-31 дні (днів) |
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1SS394TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 10V 100MA SC59Current - Reverse Leakage @ Vr: 20 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 10 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-59 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 40pF @ 0V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 5419 шт: термін постачання 21-31 дні (днів) |
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1SS397TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 400V 100MA SC70Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SC-70 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS398TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 400V 100MA S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 500 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 400 V |
на замовлення 57574 шт: термін постачання 21-31 дні (днів) |
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1SS399TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 400V 100MA SC61B |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SS402TE85LF | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY SCHOTT 20V 50MA USQPackaging: Cut Tape (CT) Package / Case: SC-82 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 50mA Supplier Device Package: USQ Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 20 V |
на замовлення 13683 шт: термін постачання 21-31 дні (днів) |
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1SS404,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 20V 300MA USCPackaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 46pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA Current - Reverse Leakage @ Vr: 50 µA @ 20 V |
на замовлення 101459 шт: термін постачання 21-31 дні (днів) |
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2SA1163-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A S-MINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: S-Mini Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 150 mW |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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2SA1587-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 120V 0.1A SC-70Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 100 mW |
на замовлення 17936 шт: термін постачання 21-31 дні (днів) |
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2SA1954BTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.5A SC-70 Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SC-70 Frequency - Transition: 130MHz Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 125°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SA1955FVATPL3Z | Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.4A CST3Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 400 mA Part Status: Obsolete Supplier Device Package: CST3 Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) |
на замовлення 2122 шт: термін постачання 21-31 дні (днів) |
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2SA1955FVBTPL3Z | Toshiba Semiconductor and Storage |
Description: TRANS PNP 12V 0.4A VESMFrequency - Transition: 130MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 400 mA Part Status: Obsolete Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 2590 шт: термін постачання 21-31 дні (днів) |
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| 2SC2712-OTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A TO-236 Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: TO-236 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 12401 шт: термін постачання 21-31 дні (днів) |
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2SC2713-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A TO-236Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-236 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 1670 шт: термін постачання 21-31 дні (днів) |
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2SC2713-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A TO-236Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-236 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 25776 шт: термін постачання 21-31 дні (днів) |
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2SC3325-Y,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.5A S-MINIPower - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: S-Mini Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 30423 шт: термін постачання 21-31 дні (днів) |
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2SC3326-B,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 20V 0.3A TO-236Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 300 mA Part Status: Active Supplier Device Package: TO-236 Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 4503 шт: термін постачання 21-31 дні (днів) |
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2SC4116-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SC-70Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SC-70 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 1617 шт: термін постачання 21-31 дні (днів) |
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2SC4213BTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 20V 0.3A SC-70Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 300 mA Part Status: Active Supplier Device Package: SC-70 Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 7633 шт: термін постачання 21-31 дні (днів) |
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2SC5084YTE85LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SC59 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5087YTE85LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 12V 7GHZ SMQ Packaging: Cut Tape (CT) Package / Case: SC-61AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Gain: 13dB Power - Max: 150mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: SMQ Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5232BTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 12V 0.5A SC59 Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: SC-59 Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 1290 шт: термін постачання 21-31 дні (днів) |
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2SC5233BTE85LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 12V 0.5A USM Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: USM Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 125°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC6026CTGRTPL3 | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.1A CST3 |
на замовлення 6389 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SJ168TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 200MA SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V Power Dissipation (Max): 200mW (Ta) Supplier Device Package: SC-59 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V |
на замовлення 2999 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SJ305TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 200MA SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V Power Dissipation (Max): 200mW (Ta) Supplier Device Package: SC-59 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V |
на замовлення 11230 шт: термін постачання 21-31 дні (днів) |
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2SK1828TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 50MA SC59 Drive Voltage (Max Rds On, Min Rds On): 2.5V Supplier Device Package: SC-59 Vgs(th) (Max) @ Id: 1.5V @ 100µA Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): 10V |
на замовлення 1307 шт: термін постачання 21-31 дні (днів) |
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2SK1829TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 50MA SC70Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): 10V Drive Voltage (Max Rds On, Min Rds On): 2.5V Supplier Device Package: SC-70 Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK2009TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 200MA SC59-3Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V Part Status: Active Supplier Device Package: SC-59-3 Vgs(th) (Max) @ Id: 1.5V @ 100µA Power Dissipation (Max): 200mW (Ta) |
на замовлення 4897 шт: термін постачання 21-31 дні (днів) |
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2SK2034TE85LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA SC70 Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): 10V Drive Voltage (Max Rds On, Min Rds On): 2.5V Supplier Device Package: SC-70 Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK3079ATE12LQ | Toshiba Semiconductor and Storage |
Description: MOSF RF N CH 10V PW-X |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK3475TE12LF | Toshiba Semiconductor and Storage |
Description: MOSF RF N CH 20V 1A PW-MINI |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK880GRTE85LF | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V SC70Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Power - Max: 100 mW Part Status: Active Supplier Device Package: SC-70 Voltage - Breakdown (V(BR)GSS): 50 V Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V FET Type: N-Channel Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 5411 шт: термін постачання 21-31 дні (днів) |
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DF2S6.2FS,L3M | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SOD923Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No |
на замовлення 287490 шт: термін постачання 21-31 дні (днів) |
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DF3A6.2FUTE85LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3VWM USMPart Status: Active Power Line Protection: No Voltage - Breakdown (Min): 5.8V Unidirectional Channels: 2 Supplier Device Package: USM Voltage - Reverse Standoff (Typ): 3V Capacitance @ Frequency: 55pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| TC75S101F(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 1.5 mA
Number of Circuits: 1
Supplier Device Package: SMV
Voltage - Input Offset: 1.2 mV
Current - Input Bias: 0.1 pA
Slew Rate: 0.15V/µs
Current - Supply: 63µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC OPAMP GP 1 CIRCUIT SMV
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 1.5 mA
Number of Circuits: 1
Supplier Device Package: SMV
Voltage - Input Offset: 1.2 mV
Current - Input Bias: 0.1 pA
Slew Rate: 0.15V/µs
Current - Supply: 63µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 1821 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 10+ | 32.38 грн |
| 25+ | 30.37 грн |
| 100+ | 25.80 грн |
| 250+ | 24.16 грн |
| 500+ | 22.99 грн |
| 1000+ | 21.46 грн |
| TC75S51F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMV
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.5V/µs
Current - Supply: 60µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC OPAMP GP 1 CIRCUIT SMV
Voltage - Supply Span (Max): 7 V
Voltage - Supply Span (Min): 1.5 V
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMV
Voltage - Input Offset: 2 mV
Current - Input Bias: 1 pA
Slew Rate: 0.5V/µs
Current - Supply: 60µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 5293 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 22.73 грн |
| 20+ | 15.25 грн |
| 25+ | 13.59 грн |
| 100+ | 10.98 грн |
| 250+ | 10.13 грн |
| 500+ | 9.62 грн |
| 1000+ | 9.05 грн |
| TC75S51FU(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 5SSOP
Description: IC OPAMP GP 5SSOP
на замовлення 3468 шт:
термін постачання 21-31 дні (днів)
| TC7S02FUT5LFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP USV
Description: IC GATE NOR 1CH 2-INP USV
на замовлення 1847 шт:
термін постачання 21-31 дні (днів)
| TC7S04FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Description: IC INVERTER 1CH 1-INP 5SSOP
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
на замовлення 48464 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.14 грн |
| 14+ | 23.10 грн |
| 25+ | 20.26 грн |
| 100+ | 12.30 грн |
| 250+ | 10.18 грн |
| 500+ | 8.14 грн |
| 1000+ | 6.14 грн |
| TC7SH86F,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP SMV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SMV
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: IC GATE XOR 1CH 2-INP SMV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: SMV
Number of Inputs: 2
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 6638 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.97 грн |
| 45+ | 6.79 грн |
| 51+ | 5.98 грн |
| 100+ | 4.77 грн |
| 250+ | 4.35 грн |
| 500+ | 4.11 грн |
| 1000+ | 3.84 грн |
| TC7S86FUT5LFT |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP 5SSOP
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
Description: IC GATE XOR 1CH 2-INP 5SSOP
Current - Output High, Low: 2.6mA, 2.6mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Input Logic Level - Low: 0.5V ~ 1.8V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
товару немає в наявності
В кошику
од. на суму грн.
| TC7SH04FUT5LJFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER SNGL USV
Description: IC INVERTER SNGL USV
товару немає в наявності
В кошику
од. на суму грн.
| TC7SH14FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Input Logic Level - Low: 0.9V ~ 1.65V
Input Logic Level - High: 2.2V ~ 3.85V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
на замовлення 2029 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 7.05 грн |
| 68+ | 4.45 грн |
| 78+ | 3.89 грн |
| 100+ | 3.09 грн |
| 250+ | 2.81 грн |
| 500+ | 2.64 грн |
| 1000+ | 2.46 грн |
| TC7W14FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 3CH 3INP 8SSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 3CH 3INP 8SSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
на замовлення 5333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 25+ | 12.23 грн |
| 28+ | 10.84 грн |
| 100+ | 8.72 грн |
| 250+ | 8.03 грн |
| 500+ | 7.62 грн |
| 1000+ | 7.16 грн |
| TC7W241FUTE12LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V SM8
Description: IC BUFFER NON-INVERT 6V SM8
на замовлення 2271 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.14 грн |
| 12+ | 26.49 грн |
| 25+ | 24.73 грн |
| 100+ | 18.55 грн |
| 250+ | 17.22 грн |
| 500+ | 14.57 грн |
| 1000+ | 11.08 грн |
| TC7W53FUTE12LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1X2 8SSOP
Description: IC MUX/DEMUX 1X2 8SSOP
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| TC7WT126FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SM8
Description: IC BUFFER NON-INVERT 5.5V SM8
на замовлення 1126 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 12+ | 25.81 грн |
| 25+ | 23.61 грн |
| 100+ | 16.48 грн |
| 250+ | 14.95 грн |
| 500+ | 12.37 грн |
| 1000+ | 9.12 грн |
| TC7WT240FUTE12LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V SM8
Description: IC BUFFER INVERT 5.5V SM8
товару немає в наявності
В кошику
од. на суму грн.
| TC7WT241FUTE12LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS BUFFER TRI-ST N-INV SM8
Description: IC BUS BUFFER TRI-ST N-INV SM8
товару немає в наявності
В кошику
од. на суму грн.
| TC7WT74FUTE12LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FLIP FLOP D PRESET/CLR 8SSOP
Description: IC FLIP FLOP D PRESET/CLR 8SSOP
на замовлення 2120 шт:
термін постачання 21-31 дні (днів)
| 1SS196(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SC593
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59-3
Description: DIODE STANDARD 80V 100MA SC593
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59-3
на замовлення 6135 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 27+ | 11.25 грн |
| 50+ | 8.05 грн |
| 100+ | 6.57 грн |
| 500+ | 4.82 грн |
| 1SS190TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SC593
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE STANDARD 80V 100MA SC593
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 30589 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.16 грн |
| 24+ | 12.60 грн |
| 50+ | 9.04 грн |
| 100+ | 7.38 грн |
| 500+ | 5.43 грн |
| 1SS302TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| 1SS306TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 100MA SC-61B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Cut Tape (CT)
Technology: Standard
Description: DIODE ARRAY GP 200V 100MA SC-61B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Cut Tape (CT)
Technology: Standard
на замовлення 9913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.28 грн |
| 10+ | 72.46 грн |
| 100+ | 48.71 грн |
| 1SS362TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 14409 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.38 грн |
| 25+ | 12.23 грн |
| 50+ | 8.77 грн |
| 100+ | 7.16 грн |
| 500+ | 5.27 грн |
| 1SS367,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
на замовлення 31424 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.11 грн |
| 36+ | 8.45 грн |
| 51+ | 6.01 грн |
| 100+ | 4.89 грн |
| 500+ | 3.56 грн |
| 1SS370TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 1SS379,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC59
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA SC59
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 29956 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.00 грн |
| 17+ | 18.27 грн |
| 100+ | 12.36 грн |
| 500+ | 9.02 грн |
| 1000+ | 8.15 грн |
| 1SS382TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 18925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.57 грн |
| 17+ | 18.42 грн |
| 50+ | 13.27 грн |
| 100+ | 10.88 грн |
| 500+ | 8.10 грн |
| 1SS384TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USQ
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USQ
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82
Packaging: Cut Tape (CT)
на замовлення 10311 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.95 грн |
| 23+ | 13.44 грн |
| 100+ | 8.54 грн |
| 500+ | 6.65 грн |
| 1000+ | 5.94 грн |
| 1SS394TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA SC59
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 10V 100MA SC59
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 5419 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 21.16 грн |
| 24+ | 12.60 грн |
| 100+ | 7.87 грн |
| 500+ | 5.45 грн |
| 1000+ | 4.82 грн |
| 1SS397TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 400V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 1SS398TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
на замовлення 57574 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.46 грн |
| 12+ | 27.17 грн |
| 100+ | 17.38 грн |
| 500+ | 12.34 грн |
| 1000+ | 11.06 грн |
| 1SS399TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA SC61B
Description: DIODE ARRAY GP 400V 100MA SC61B
товару немає в наявності
В кошику
од. на суму грн.
| 1SS402TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
на замовлення 13683 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.57 грн |
| 18+ | 17.74 грн |
| 100+ | 11.15 грн |
| 500+ | 7.79 грн |
| 1000+ | 6.93 грн |
| 1SS404,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
на замовлення 101459 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.11 грн |
| 36+ | 8.45 грн |
| 100+ | 5.22 грн |
| 500+ | 3.57 грн |
| 1000+ | 3.14 грн |
| 2SA1163-GR,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.03 грн |
| 30+ | 10.34 грн |
| 100+ | 6.44 грн |
| 500+ | 4.43 грн |
| 1000+ | 3.91 грн |
| 2SA1587-GR,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
на замовлення 17936 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.11 грн |
| 36+ | 8.53 грн |
| 100+ | 5.25 грн |
| 500+ | 3.60 грн |
| 1000+ | 3.17 грн |
| 2SA1954BTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Frequency - Transition: 130MHz
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Frequency - Transition: 130MHz
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1955FVATPL3Z |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 400 mA
Part Status: Obsolete
Supplier Device Package: CST3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Description: TRANS PNP 12V 0.4A CST3
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 400 mA
Part Status: Obsolete
Supplier Device Package: CST3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
на замовлення 2122 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.65 грн |
| 19+ | 16.00 грн |
| 100+ | 10.06 грн |
| 500+ | 7.01 грн |
| 1000+ | 6.23 грн |
| 2000+ | 5.57 грн |
| 2SA1955FVBTPL3Z |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A VESM
Frequency - Transition: 130MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 400 mA
Part Status: Obsolete
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS PNP 12V 0.4A VESM
Frequency - Transition: 130MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 400 mA
Part Status: Obsolete
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 2590 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.65 грн |
| 19+ | 16.00 грн |
| 100+ | 10.06 грн |
| 500+ | 7.01 грн |
| 1000+ | 6.23 грн |
| 2000+ | 5.57 грн |
| 2SC2712-OTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 0.15A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 12401 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 14.11 грн |
| 39+ | 7.93 грн |
| 100+ | 4.89 грн |
| 500+ | 3.34 грн |
| 1000+ | 2.93 грн |
| 2SC2713-BL,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 120V 0.1A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 1670 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 29+ | 10.72 грн |
| 100+ | 6.67 грн |
| 500+ | 4.60 грн |
| 1000+ | 4.06 грн |
| 2SC2713-GR,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 120V 0.1A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 25776 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.03 грн |
| 29+ | 10.42 грн |
| 100+ | 6.45 грн |
| 500+ | 4.45 грн |
| 1000+ | 3.92 грн |
| 2SC3325-Y,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: S-Mini
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: S-Mini
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 30423 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.81 грн |
| 28+ | 11.02 грн |
| 100+ | 6.88 грн |
| 500+ | 4.75 грн |
| 1000+ | 4.19 грн |
| 2SC3326-B,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 20V 0.3A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 4503 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.08 грн |
| 21+ | 14.79 грн |
| 100+ | 9.25 грн |
| 500+ | 6.44 грн |
| 1000+ | 5.71 грн |
| 2SC4116-BL,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 1617 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.54 грн |
| 43+ | 7.17 грн |
| 100+ | 4.41 грн |
| 500+ | 3.00 грн |
| 1000+ | 2.63 грн |
| 2SC4213BTE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 20V 0.3A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 7633 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.65 грн |
| 19+ | 16.00 грн |
| 100+ | 10.02 грн |
| 500+ | 6.99 грн |
| 1000+ | 6.20 грн |
| 2SC5084YTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SC59
Description: RF TRANS NPN 12V 7GHZ SC59
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5087YTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Obsolete
Description: RF TRANS NPN 12V 7GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5232BTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A SC59
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-59
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 12V 0.5A SC59
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-59
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 1290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.54 грн |
| 29+ | 10.49 грн |
| 100+ | 8.91 грн |
| 500+ | 7.45 грн |
| 1000+ | 7.09 грн |
| 2SC5233BTE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A USM
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: USM
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 12V 0.5A USM
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: USM
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SC6026CTGRTPL3 |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.1A CST3
Description: TRANS NPN 50V 0.1A CST3
на замовлення 6389 шт:
термін постачання 21-31 дні (днів)
| 2SJ168TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
Description: MOSFET P-CH 60V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
| 2SJ305TE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
Description: MOSFET P-CH 30V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
на замовлення 11230 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.30 грн |
| 10+ | 31.70 грн |
| 100+ | 20.52 грн |
| 500+ | 14.70 грн |
| 1000+ | 13.24 грн |
| 2SK1828TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Supplier Device Package: SC-59
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 10V
Description: MOSFET N-CH 20V 50MA SC59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Supplier Device Package: SC-59
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 10V
на замовлення 1307 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.08 грн |
| 21+ | 14.49 грн |
| 100+ | 9.08 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.59 грн |
| 2SK1829TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC70
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Supplier Device Package: SC-70
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 50MA SC70
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Supplier Device Package: SC-70
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SK2009TE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 200MA SC59-3
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Part Status: Active
Supplier Device Package: SC-59-3
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 200mW (Ta)
Description: MOSFET N-CH 30V 200MA SC59-3
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Part Status: Active
Supplier Device Package: SC-59-3
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 200mW (Ta)
на замовлення 4897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.57 грн |
| 10+ | 35.85 грн |
| 50+ | 26.28 грн |
| 100+ | 21.75 грн |
| 500+ | 16.62 грн |
| 2SK2034TE85LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA SC70
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Supplier Device Package: SC-70
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 100MA SC70
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Supplier Device Package: SC-70
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SK3079ATE12LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 10V PW-X
Description: MOSF RF N CH 10V PW-X
товару немає в наявності
В кошику
од. на суму грн.
| 2SK3475TE12LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 20V 1A PW-MINI
Description: MOSF RF N CH 20V 1A PW-MINI
товару немає в наявності
В кошику
од. на суму грн.
| 2SK880GRTE85LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: SC-70
Voltage - Breakdown (V(BR)GSS): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: JFET N-CH 50V SC70
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: SC-70
Voltage - Breakdown (V(BR)GSS): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 5411 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.16 грн |
| 10+ | 31.32 грн |
| 100+ | 20.95 грн |
| 500+ | 16.05 грн |
| 1000+ | 14.46 грн |
| DF2S6.2FS,L3M |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Description: TVS DIODE 5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
на замовлення 287490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 40+ | 7.70 грн |
| 56+ | 5.48 грн |
| 100+ | 4.46 грн |
| 500+ | 3.23 грн |
| DF3A6.2FUTE85LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USM
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 2
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 3VWM USM
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 2
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.60 грн |
| 26+ | 11.62 грн |
| 100+ | 7.28 грн |
| 500+ | 5.03 грн |
| 1000+ | 4.45 грн |





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