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TK8P60W,RVQ TK8P60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13675&prodName=TK8P60W Description: MOSFET N CH 600V 8A DPAK
товар відсутній
TK12P60W,RVQ TK12P60W,RVQ Toshiba Semiconductor and Storage TK12P60W_datasheet_en_20140917.pdf?did=13511&prodName=TK12P60W Description: MOSFET N CH 600V 11.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
2+142.89 грн
10+ 114.6 грн
100+ 91.19 грн
500+ 72.41 грн
1000+ 61.44 грн
Мінімальне замовлення: 2
TK12P60W,RVQ TK12P60W,RVQ Toshiba Semiconductor and Storage TK12P60W_datasheet_en_20140917.pdf?did=13511&prodName=TK12P60W Description: MOSFET N CH 600V 11.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
товар відсутній
TK12Q60W,S1VQ TK12Q60W,S1VQ Toshiba Semiconductor and Storage TK12Q60W_datasheet_en_20131225.pdf?did=13513&prodName=TK12Q60W Description: MOSFET N CH 600V 11.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
3+127.96 грн
Мінімальне замовлення: 3
TK16G60W,RVQ TK16G60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13520&prodName=TK16G60W Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+416.59 грн
10+ 336.88 грн
100+ 272.56 грн
500+ 227.36 грн
TK16G60W,RVQ TK16G60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13520&prodName=TK16G60W Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+215.43 грн
Мінімальне замовлення: 1000
TPH2R306NH,L1Q TPH2R306NH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=13732&prodName=TPH2R306NH Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
на замовлення 4854 шт:
термін постачання 21-31 дні (днів)
3+114.46 грн
10+ 91.87 грн
100+ 73.15 грн
500+ 58.09 грн
1000+ 49.29 грн
2000+ 46.82 грн
Мінімальне замовлення: 3
TK16N60W,S1VF TK16N60W,S1VF Toshiba Semiconductor and Storage TK16N60W_datasheet_en_20131225.pdf?did=13611&prodName=TK16N60W Description: MOSFET N CH 600V 15.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
2+264.46 грн
30+ 202.04 грн
Мінімальне замовлення: 2
TK31N60W,S1VF TK31N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13612&prodName=TK31N60W Description: MOSFET N CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
товар відсутній
TK39N60W,S1VF TK39N60W,S1VF Toshiba Semiconductor and Storage TK39N60W_datasheet_en_20131226.pdf?did=13613&prodName=TK39N60W Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
товар відсутній
TK62N60W,S1VF TK62N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13614&prodName=TK62N60W Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+1176.55 грн
10+ 1041.44 грн
TK100L60W,VQ TK100L60W,VQ Toshiba Semiconductor and Storage TK100L60W_datasheet_en_20131225.pdf?did=13695&prodName=TK100L60W Description: MOSFET N-CH 600V 100A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Power Dissipation (Max): 797W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 5mA
Supplier Device Package: TO-3P(L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
на замовлення 432 шт:
термін постачання 21-31 дні (днів)
1+2195.98 грн
10+ 1878.95 грн
100+ 1643.39 грн
TPH2R306NH,L1Q TPH2R306NH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=13732&prodName=TPH2R306NH Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
товар відсутній
TB67H301FTG,EL TB67H301FTG,EL Toshiba Semiconductor and Storage docget.jsp?did=14095&prodName=TB67H301FTG Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 9309 шт:
термін постачання 21-31 дні (днів)
3+116.59 грн
10+ 100.77 грн
25+ 95.07 грн
100+ 76.01 грн
250+ 71.38 грн
500+ 62.45 грн
1000+ 50.9 грн
2500+ 47.39 грн
Мінімальне замовлення: 3
TC78H600FTG,EL TC78H600FTG,EL Toshiba Semiconductor and Storage docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet Description: IC MOTOR DRIVER PAR 24WQFN
на замовлення 4818 шт:
термін постачання 21-31 дні (днів)
TC78H600FTG,EL TC78H600FTG,EL Toshiba Semiconductor and Storage docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet Description: IC MOTOR DRIVER PAR 24WQFN
товар відсутній
TC94B15WBG(EB,NK2Z TC94B15WBG(EB,NK2Z Toshiba Semiconductor and Storage TC94B15WBG.pdf Description: IC AMP CLASS G STEREO 20WCSP
товар відсутній
TC94B06WBG(EB,NKA) TC94B06WBG(EB,NKA) Toshiba Semiconductor and Storage TC94B06WBG.pdf Description: IC AMP CLASS G STEREO 16WCSP
товар відсутній
TC62D902FG(C8,ELHZ TC62D902FG(C8,ELHZ Toshiba Semiconductor and Storage docget.jsp?did=14182&prodName=TC62D902FG Description: IC CNTRLR ISOLATED 8SOP
товар відсутній
TC78H600FTG,EL TC78H600FTG,EL Toshiba Semiconductor and Storage docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet Description: IC MOTOR DRIVER PAR 24WQFN
товар відсутній
TC35420XLG(EL) Toshiba Semiconductor and Storage Description: IC TRANSFERJET 4.48GHZ 81XFLGA
товар відсутній
TC35420XLG(EL) Toshiba Semiconductor and Storage Description: IC TRANSFERJET 4.48GHZ 81XFLGA
товар відсутній
JBTC94B12-AS(EB) JBTC94B12-AS(EB) Toshiba Semiconductor and Storage Description: IC AMPLIFIER ECM 6XFBGA
товар відсутній
TC62D902FG(C8,ELHZ TC62D902FG(C8,ELHZ Toshiba Semiconductor and Storage docget.jsp?did=14182&prodName=TC62D902FG Description: IC CNTRLR ISOLATED 8SOP
товар відсутній
TC62D902FG(C8,ELHZ TC62D902FG(C8,ELHZ Toshiba Semiconductor and Storage docget.jsp?did=14182&prodName=TC62D902FG Description: IC CNTRLR ISOLATED 8SOP
товар відсутній
TB6818FG,EL TB6818FG,EL Toshiba Semiconductor and Storage TB6818FG.pdf Description: IC PFC CTRLR CCM 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOP (0.181", 4.60mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 8.4V ~ 26V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 16-SSOP
Current - Startup: 30 µA
товар відсутній
TB6819AFG,C,EL TB6819AFG,C,EL Toshiba Semiconductor and Storage docget.jsp?did=12875&prodName=TB6819AFG Description: IC PFC CTRLR CRM 150KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10V ~ 25V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOP
Current - Startup: 72.5 µA
товар відсутній
TC35420XLG(EL) Toshiba Semiconductor and Storage Description: IC TRANSFERJET 4.48GHZ 81XFLGA
товар відсутній
TB67H301FTG,EL TB67H301FTG,EL Toshiba Semiconductor and Storage docget.jsp?did=14095&prodName=TB67H301FTG Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+51.34 грн
Мінімальне замовлення: 5000
DF6D7M1N,LF DF6D7M1N,LF Toshiba Semiconductor and Storage DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+6.23 грн
Мінімальне замовлення: 3000
DF6D7M1N,LF DF6D7M1N,LF Toshiba Semiconductor and Storage DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
13+22.75 грн
16+ 17.25 грн
100+ 10.34 грн
500+ 8.99 грн
1000+ 6.11 грн
Мінімальне замовлення: 13
TCR2EE33,LM TCR2EE33,LM Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EE33,LM TCR2EE33,LM Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EE45,LM TCR2EE45,LM Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EE45,LM TCR2EE45,LM Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TCK101G,LF TCK101G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK101G Description: IC POWER DIST LOAD SWITCH 6WCSP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
DF10G7M1N,LF DF10G7M1N,LF Toshiba Semiconductor and Storage Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
товар відсутній
DF10G7M1N,LF DF10G7M1N,LF Toshiba Semiconductor and Storage Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
товар відсутній
TCK107G,LF TCK107G,LF Toshiba Semiconductor and Storage docget.jsp?did=13796&prodName=TCK107G Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
товар відсутній
TCK108G,LF TCK108G,LF Toshiba Semiconductor and Storage docget.jsp?did=13796&prodName=TCK107G Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
товар відсутній
TCK106G,LF TCK106G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK106G Description: IC POWER DIST LOAD SWITCH 4WCSP
товар відсутній
TCK102G,LF TCK102G,LF Toshiba Semiconductor and Storage TCK101G,102G.pdf Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
товар відсутній
TCK107G,LF TCK107G,LF Toshiba Semiconductor and Storage docget.jsp?did=13796&prodName=TCK107G Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
товар відсутній
TCK108G,LF TCK108G,LF Toshiba Semiconductor and Storage docget.jsp?did=13796&prodName=TCK107G Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
товар відсутній
TCK101G,LF TCK101G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK101G Description: IC POWER DIST LOAD SWITCH 6WCSP
на замовлення 2387 шт:
термін постачання 21-31 дні (днів)
TCK101G,LF TCK101G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK101G Description: IC POWER DIST LOAD SWITCH 6WCSP
товар відсутній
TCK106G,LF TCK106G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK106G Description: IC POWER DIST LOAD SWITCH 4WCSP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
TCK106G,LF TCK106G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK106G Description: IC POWER DIST LOAD SWITCH 4WCSP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
TCK102G,LF TCK102G,LF Toshiba Semiconductor and Storage TCK101G,102G.pdf Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
товар відсутній
TCR2EE50,LM TCR2EE50,LM Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EE50,LM TCR2EE50,LM Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TC4066BP-NF TC4066BP-NF Toshiba Semiconductor and Storage Description: IC BILATERAL SW 1 X 1:1 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-DIP
Part Status: Active
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
5+62.56 грн
10+ 53.88 грн
25+ 51.12 грн
100+ 39.41 грн
250+ 36.84 грн
Мінімальне замовлення: 5
TCR2EN18,LF TCR2EN18,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 1.8V 0.2A WCSP4
на замовлення 9615 шт:
термін постачання 21-31 дні (днів)
TCR2EN12,LF TCR2EN12,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 1.2V 0.2A WCSP4
на замовлення 7968 шт:
термін постачання 21-31 дні (днів)
TCR2EN15,LF TCR2EN15,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 1.5V 0.2A WCSP4
на замовлення 19321 шт:
термін постачання 21-31 дні (днів)
TCR2EN25,LF TCR2EN25,LF Toshiba Semiconductor and Storage TCR2EN125_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN125 Description: IC REG LINEAR 2.5V 200MA 4SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EN28,LF TCR2EN28,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 2.8V 0.2A WCSP4
на замовлення 17541 шт:
термін постачання 21-31 дні (днів)
TCR2EN30,LF TCR2EN30,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR2EN10 Description: IC REG LDO 3V 0.2A WCSP4
на замовлення 5620 шт:
термін постачання 21-31 дні (днів)
TCR2EN33,LF TCR2EN33,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR2EN10 Description: IC REG LDO 3.3V 0.2A WCSP4
на замовлення 7703 шт:
термін постачання 21-31 дні (днів)
TCR2EN18,LF TCR2EN18,LF Toshiba Semiconductor and Storage docget.jsp?pid=TCR2EN125&lang=en&type=datasheet Description: IC REG LDO 1.8V 0.2A WCSP4
на замовлення 9615 шт:
термін постачання 21-31 дні (днів)
TK8P60W,RVQ docget.jsp?did=13675&prodName=TK8P60W
TK8P60W,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 8A DPAK
товар відсутній
TK12P60W,RVQ TK12P60W_datasheet_en_20140917.pdf?did=13511&prodName=TK12P60W
TK12P60W,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+142.89 грн
10+ 114.6 грн
100+ 91.19 грн
500+ 72.41 грн
1000+ 61.44 грн
Мінімальне замовлення: 2
TK12P60W,RVQ TK12P60W_datasheet_en_20140917.pdf?did=13511&prodName=TK12P60W
TK12P60W,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
товар відсутній
TK12Q60W,S1VQ TK12Q60W_datasheet_en_20131225.pdf?did=13513&prodName=TK12Q60W
TK12Q60W,S1VQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
на замовлення 61 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+127.96 грн
Мінімальне замовлення: 3
TK16G60W,RVQ docget.jsp?did=13520&prodName=TK16G60W
TK16G60W,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+416.59 грн
10+ 336.88 грн
100+ 272.56 грн
500+ 227.36 грн
TK16G60W,RVQ docget.jsp?did=13520&prodName=TK16G60W
TK16G60W,RVQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1000+215.43 грн
Мінімальне замовлення: 1000
TPH2R306NH,L1Q docget.jsp?did=13732&prodName=TPH2R306NH
TPH2R306NH,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
на замовлення 4854 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+114.46 грн
10+ 91.87 грн
100+ 73.15 грн
500+ 58.09 грн
1000+ 49.29 грн
2000+ 46.82 грн
Мінімальне замовлення: 3
TK16N60W,S1VF TK16N60W_datasheet_en_20131225.pdf?did=13611&prodName=TK16N60W
TK16N60W,S1VF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+264.46 грн
30+ 202.04 грн
Мінімальне замовлення: 2
TK31N60W,S1VF docget.jsp?did=13612&prodName=TK31N60W
TK31N60W,S1VF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
товар відсутній
TK39N60W,S1VF TK39N60W_datasheet_en_20131226.pdf?did=13613&prodName=TK39N60W
TK39N60W,S1VF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
товар відсутній
TK62N60W,S1VF docget.jsp?did=13614&prodName=TK62N60W
TK62N60W,S1VF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1176.55 грн
10+ 1041.44 грн
TK100L60W,VQ TK100L60W_datasheet_en_20131225.pdf?did=13695&prodName=TK100L60W
TK100L60W,VQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 100A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Power Dissipation (Max): 797W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 5mA
Supplier Device Package: TO-3P(L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
на замовлення 432 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2195.98 грн
10+ 1878.95 грн
100+ 1643.39 грн
TPH2R306NH,L1Q docget.jsp?did=13732&prodName=TPH2R306NH
TPH2R306NH,L1Q
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
товар відсутній
TB67H301FTG,EL docget.jsp?did=14095&prodName=TB67H301FTG
TB67H301FTG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 9309 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+116.59 грн
10+ 100.77 грн
25+ 95.07 грн
100+ 76.01 грн
250+ 71.38 грн
500+ 62.45 грн
1000+ 50.9 грн
2500+ 47.39 грн
Мінімальне замовлення: 3
TC78H600FTG,EL docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet
TC78H600FTG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
на замовлення 4818 шт:
термін постачання 21-31 дні (днів)
TC78H600FTG,EL docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet
TC78H600FTG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
товар відсутній
TC94B15WBG(EB,NK2Z TC94B15WBG.pdf
TC94B15WBG(EB,NK2Z
Виробник: Toshiba Semiconductor and Storage
Description: IC AMP CLASS G STEREO 20WCSP
товар відсутній
TC94B06WBG(EB,NKA) TC94B06WBG.pdf
TC94B06WBG(EB,NKA)
Виробник: Toshiba Semiconductor and Storage
Description: IC AMP CLASS G STEREO 16WCSP
товар відсутній
TC62D902FG(C8,ELHZ docget.jsp?did=14182&prodName=TC62D902FG
TC62D902FG(C8,ELHZ
Виробник: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
товар відсутній
TC78H600FTG,EL docget.jsp?pid=TC78H600FTG&lang=en&type=datasheet
TC78H600FTG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 24WQFN
товар відсутній
TC35420XLG(EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
товар відсутній
TC35420XLG(EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
товар відсутній
JBTC94B12-AS(EB)
JBTC94B12-AS(EB)
Виробник: Toshiba Semiconductor and Storage
Description: IC AMPLIFIER ECM 6XFBGA
товар відсутній
TC62D902FG(C8,ELHZ docget.jsp?did=14182&prodName=TC62D902FG
TC62D902FG(C8,ELHZ
Виробник: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
товар відсутній
TC62D902FG(C8,ELHZ docget.jsp?did=14182&prodName=TC62D902FG
TC62D902FG(C8,ELHZ
Виробник: Toshiba Semiconductor and Storage
Description: IC CNTRLR ISOLATED 8SOP
товар відсутній
TB6818FG,EL TB6818FG.pdf
TB6818FG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PFC CTRLR CCM 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOP (0.181", 4.60mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 8.4V ~ 26V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 16-SSOP
Current - Startup: 30 µA
товар відсутній
TB6819AFG,C,EL docget.jsp?did=12875&prodName=TB6819AFG
TB6819AFG,C,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PFC CTRLR CRM 150KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 10V ~ 25V
Frequency - Switching: 20kHz ~ 150kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOP
Current - Startup: 72.5 µA
товар відсутній
TC35420XLG(EL)
Виробник: Toshiba Semiconductor and Storage
Description: IC TRANSFERJET 4.48GHZ 81XFLGA
товар відсутній
TB67H301FTG,EL docget.jsp?did=14095&prodName=TB67H301FTG
TB67H301FTG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 3V-5.5V 24WQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 4.5V ~ 38V
Supplier Device Package: 24-WQFN (4x4)
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5000+51.34 грн
Мінімальне замовлення: 5000
DF6D7M1N,LF DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N
DF6D7M1N,LF
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+6.23 грн
Мінімальне замовлення: 3000
DF6D7M1N,LF DF6D7M1N_datasheet_en_20221121.pdf?did=13719&prodName=DF6D7M1N
DF6D7M1N,LF
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-DFN (1.25x1)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: No
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
13+22.75 грн
16+ 17.25 грн
100+ 10.34 грн
500+ 8.99 грн
1000+ 6.11 грн
Мінімальне замовлення: 13
TCR2EE33,LM TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE33,LM
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EE33,LM TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE33,LM
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EE45,LM TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE45,LM
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EE45,LM TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE45,LM
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TCK101G,LF docget.jsp?type=datasheet&lang=en&pid=TCK101G
TCK101G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
DF10G7M1N,LF
DF10G7M1N,LF
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
товар відсутній
DF10G7M1N,LF
DF10G7M1N,LF
Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 12VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power Line Protection: Yes
товар відсутній
TCK107G,LF docget.jsp?did=13796&prodName=TCK107G
TCK107G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
товар відсутній
TCK108G,LF docget.jsp?did=13796&prodName=TCK107G
TCK108G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
товар відсутній
TCK106G,LF docget.jsp?type=datasheet&lang=en&pid=TCK106G
TCK106G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 4WCSP
товар відсутній
TCK102G,LF TCK101G,102G.pdf
TCK102G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
товар відсутній
TCK107G,LF docget.jsp?did=13796&prodName=TCK107G
TCK107G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
товар відсутній
TCK108G,LF docget.jsp?did=13796&prodName=TCK107G
TCK108G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 4WCSP
товар відсутній
TCK101G,LF docget.jsp?type=datasheet&lang=en&pid=TCK101G
TCK101G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
на замовлення 2387 шт:
термін постачання 21-31 дні (днів)
TCK101G,LF docget.jsp?type=datasheet&lang=en&pid=TCK101G
TCK101G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
товар відсутній
TCK106G,LF docget.jsp?type=datasheet&lang=en&pid=TCK106G
TCK106G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 4WCSP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
TCK106G,LF docget.jsp?type=datasheet&lang=en&pid=TCK106G
TCK106G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 4WCSP
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
TCK102G,LF TCK101G,102G.pdf
TCK102G,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHANNEL 1:1 6BGA
товар відсутній
TCR2EE50,LM TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE50,LM
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EE50,LM TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE50,LM
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
товар відсутній
TC4066BP-NF
TC4066BP-NF
Виробник: Toshiba Semiconductor and Storage
Description: IC BILATERAL SW 1 X 1:1 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 1:1
Type: Bilateral, FET Switches
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-DIP
Part Status: Active
на замовлення 334 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+62.56 грн
10+ 53.88 грн
25+ 51.12 грн
100+ 39.41 грн
250+ 36.84 грн
Мінімальне замовлення: 5
TCR2EN18,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN18,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A WCSP4
на замовлення 9615 шт:
термін постачання 21-31 дні (днів)
TCR2EN12,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN12,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.2V 0.2A WCSP4
на замовлення 7968 шт:
термін постачання 21-31 дні (днів)
TCR2EN15,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN15,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.5V 0.2A WCSP4
на замовлення 19321 шт:
термін постачання 21-31 дні (днів)
TCR2EN25,LF TCR2EN125_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN125
TCR2EN25,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 200MA 4SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.21V @ 150mA
Protection Features: Over Current
товар відсутній
TCR2EN28,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN28,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.8V 0.2A WCSP4
на замовлення 17541 шт:
термін постачання 21-31 дні (днів)
TCR2EN30,LF docget.jsp?type=datasheet&lang=en&pid=TCR2EN10
TCR2EN30,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 3V 0.2A WCSP4
на замовлення 5620 шт:
термін постачання 21-31 дні (днів)
TCR2EN33,LF docget.jsp?type=datasheet&lang=en&pid=TCR2EN10
TCR2EN33,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 3.3V 0.2A WCSP4
на замовлення 7703 шт:
термін постачання 21-31 дні (днів)
TCR2EN18,LF docget.jsp?pid=TCR2EN125&lang=en&type=datasheet
TCR2EN18,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A WCSP4
на замовлення 9615 шт:
термін постачання 21-31 дні (днів)
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