Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13580) > Сторінка 198 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| TOCP200K(SUMID) | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVING MODULE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P555(S) | Toshiba Semiconductor and Storage |
Description: OPTOCOUPLER SO6 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP785(Y-LF6,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TOCP200QK | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVING MODULE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TOCP255K(SUMID) | Toshiba Semiconductor and Storage |
Description: IC TRANSCEIVING MODULE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TC7S00F,LF | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 1CH 2-INP SMVPackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: SMV Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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RN2901,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4Supplier Device Package: US6 Resistor - Emitter Base (R2): 4.7kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2901,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Supplier Device Package: US6 Resistor - Emitter Base (R2): 4.7kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN2901FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETRSupplier Device Package: ES6 Resistor - Emitter Base (R2): 4.7kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN2901FE,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETRPackaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: ES6 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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74LCX157FT | Toshiba Semiconductor and Storage |
Description: PB-F LCX TOTAL 16 CMOS LOGICPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOPB |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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74LCX157FT | Toshiba Semiconductor and Storage |
Description: PB-F LCX TOTAL 16 CMOS LOGICPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOPB |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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74LCX14FT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14TSSOPFeatures: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.35V ~ 2.2V Input Logic Level - Low: 0.3V ~ 0.6V Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74VHCT00AFT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74VHCT00AFT | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 2610 шт: термін постачання 21-31 дні (днів) |
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74LCX540FT | Toshiba Semiconductor and Storage |
Description: IC BUFFER INVERT 3.6V 20TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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74VHC174FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SGL 6-BIT 16-TSSOPBPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 120 MHz Input Capacitance: 4 pF Supplier Device Package: 16-TSSOPB Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF Grade: Automotive Number of Bits per Element: 6 Qualification: AEC-Q100 |
на замовлення 1150 шт: термін постачання 21-31 дні (днів) |
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74VHC373FT | Toshiba Semiconductor and Storage |
Description: IC D-TYPE 8:8 20-TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 5ns Supplier Device Package: 20-TSSOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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74VHC373FT | Toshiba Semiconductor and Storage |
Description: IC D-TYPE 8:8 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 5ns Supplier Device Package: 20-TSSOP |
на замовлення 1253 шт: термін постачання 21-31 дні (днів) |
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74LCX574FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOPNumber of Bits per Element: 8 Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF Supplier Device Package: 20-TSSOP Input Capacitance: 7 pF Clock Frequency: 150 MHz Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Current - Quiescent (Iq): 10 µA Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Type: D-Type Function: Standard Number of Elements: 1 Mounting Type: Surface Mount Output Type: Tri-State, Non-Inverted Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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74LCX574FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOPNumber of Bits per Element: 8 Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF Supplier Device Package: 20-TSSOP Input Capacitance: 7 pF Clock Frequency: 150 MHz Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Current - Quiescent (Iq): 10 µA Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Type: D-Type Function: Standard Number of Elements: 1 Mounting Type: Surface Mount Output Type: Tri-State, Non-Inverted Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 2402 шт: термін постачання 21-31 дні (днів) |
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| TCR2DG25,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.5V 200MA 4-WCSPPackaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 70 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSP (0.79x0.79) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable PSRR: 75dB ~ 50dB (1kHz ~ 100kHz) Voltage Dropout (Max): 0.13V @ 100mA Protection Features: Over Current, Over Temperature |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
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TLP5754(D4-TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOOperating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Voltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Pulse Width Distortion (Max): 50ns Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 3A, 3A Technology: Optical Coupling Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.55V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5754(D4-TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOVoltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Pulse Width Distortion (Max): 50ns Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 3A, 3A Technology: Optical Coupling Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.55V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
на замовлення 2238 шт: термін постачання 21-31 дні (днів) |
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TLP5754(TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 4A Technology: Optical Coupling Current - Output High, Low: 3A, 3A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP5754(TP4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 4A Technology: Optical Coupling Current - Output High, Low: 3A, 3A Voltage - Isolation: 5000Vrms Approval Agency: CQC, CSA, cUL, UL, VDE Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 2849 шт: термін постачання 21-31 дні (днів) |
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TC7SPB9306TU,LF(CT | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 1 X 1:1 UF6Supplier Device Package: UF6 Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 1 x 1:1 Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TC7SPB9306TU,LF(CT | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 1 X 1:1 UF6Supplier Device Package: UF6 Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 1 x 1:1 Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 1668 шт: термін постачання 21-31 дні (днів) |
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TC7MPB9307FK(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 8 X 1:1 20VSSOPSupplier Device Package: 20-VSSOP Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 8 x 1:1 Mounting Type: Surface Mount Package / Case: 20-VFSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TC7MPB9307FK(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 8 X 1:1 20VSSOPSupplier Device Package: 20-VSSOP Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 8 x 1:1 Mounting Type: Surface Mount Package / Case: 20-VFSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) |
на замовлення 5586 шт: термін постачання 21-31 дні (днів) |
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TC7MPB9327FT(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 2 X 1:2 14TSSOPSupplier Device Package: 14-TSSOP Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 2 x 1:2 Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TC7MPB9327FT(EL) | Toshiba Semiconductor and Storage |
Description: IC BUS SWITCH 2 X 1:2 14TSSOPMounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 14-TSSOP Voltage Supply Source: Dual Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus Switch Circuit: 2 x 1:2 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TBAT54A,LM | Toshiba Semiconductor and Storage |
Description: DIODE ARR SCHOTT 30V 100MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TBAT54A,LM | Toshiba Semiconductor and Storage |
Description: DIODE ARR SCHOTT 30V 100MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.5 ns Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 2520 шт: термін постачання 21-31 дні (днів) |
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| TB6613FTG,8,EL | Toshiba Semiconductor and Storage |
Description: 8 H-BRIDGE DRIVER, CAN BE CONFIGPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
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RN4989(TE85L,F) | Toshiba Semiconductor and Storage |
Description: NPN + PNP BRT Q1BSR=47KOHM Q1BERPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN4989(TE85L,F) | Toshiba Semiconductor and Storage |
Description: NPN + PNP BRT Q1BSR=47KOHM Q1BERPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP151A(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 600mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 3750Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 350ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLP151A(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 600mA Technology: Optical Coupling Current - Output High, Low: 400mA, 400mA Voltage - Isolation: 3750Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 50ns, 50ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 350ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 7534 шт: термін постачання 21-31 дні (днів) |
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TMPM3HNFDADFG | Toshiba Semiconductor and Storage |
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,QPackaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 17x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: DMA, LVD, Motor Control PWM, POR, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 93 |
на замовлення 66 шт: термін постачання 21-31 дні (днів) |
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TMPM3HLFDAUG | Toshiba Semiconductor and Storage |
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,QPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: DMA, LVD, Motor Control PWM, POR, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 57 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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TMPM3HPF10BFG | Toshiba Semiconductor and Storage |
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QFPackaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 105°C Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 19x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: DMA, LVD, Motor Control PWM, POR, WDT Supplier Device Package: 128-LQFP (14x14) Number of I/O: 118 |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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TMPM3HMFDAFG | Toshiba Semiconductor and Storage |
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,QPackaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 512KB (512K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: DMA, LVD, Motor Control PWM, POR, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 73 |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
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TMPM3HNFDAFG | Toshiba Semiconductor and Storage |
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,QNumber of I/O: 93 Supplier Device Package: 100-LQFP (14x14) Peripherals: DMA, LVD, Motor Control PWM, POR, WDT Connectivity: I2C, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 17x12b SAR; D/A 2x8b Core Processor: ARM® Cortex®-M3 EEPROM Size: 32K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C RAM Size: 64K x 8 Program Memory Size: 512KB (512K x 8) Speed: 120MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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| TMPM3HQFDAFG | Toshiba Semiconductor and Storage |
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,QEEPROM Size: 32K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C RAM Size: 64K x 8 Program Memory Size: 512KB (512K x 8) Speed: 120MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Packaging: Tray Number of I/O: 135 Supplier Device Package: 144-LQFP (20x20) Peripherals: DMA, LVD, Motor Control PWM, POR, WDT Connectivity: I2C, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 21x12b SAR; D/A 2x8b Core Processor: ARM® Cortex®-M3 |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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TMPM3HNF10BFG | Toshiba Semiconductor and Storage |
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QFNumber of I/O: 92 Supplier Device Package: 100-LQFP (14x14) Peripherals: DMA, LVD, Motor Control PWM, POR, WDT Connectivity: I2C, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 17x12b SAR; D/A 2x8b Core Processor: ARM® Cortex®-M3 EEPROM Size: 32K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C RAM Size: 128K x 8 Program Memory Size: 1MB (1M x 8) Speed: 120MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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TMPM3HQF10BFG | Toshiba Semiconductor and Storage |
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QFPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 1MB (1M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 105°C Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 21x12b SAR; D/A 2x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: DMA, LVD, Motor Control PWM, POR, WDT Supplier Device Package: 144-LQFP (20x20) Number of I/O: 134 |
на замовлення 95 шт: термін постачання 21-31 дні (днів) |
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TDTA114E,LM | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TDTA114E,LM | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only |
на замовлення 2399 шт: термін постачання 21-31 дні (днів) |
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TC7WU04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 3CH 3-INP 8SSOPCurrent - Quiescent (Max): 1 µA Number of Circuits: 3 Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF Input Logic Level - Low: 0.3V ~ 1.2V Input Logic Level - High: 1.7V ~ 4.8V Supplier Device Package: 8-SSOP Number of Inputs: 3 Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TC7WU04FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERTER 3CH 3-INP 8SSOPCurrent - Quiescent (Max): 1 µA Number of Circuits: 3 Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF Input Logic Level - Low: 0.3V ~ 1.2V Input Logic Level - High: 1.7V ~ 4.8V Supplier Device Package: 8-SSOP Number of Inputs: 3 Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Cut Tape (CT) |
на замовлення 8040 шт: термін постачання 21-31 дні (днів) |
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TDTA123J,LM | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SOT23-3Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 320 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TDTA123J,LM | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS PNP 50V SOT23-3Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 320 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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TRS4V65H,LQ | Toshiba Semiconductor and Storage |
Description: G3 SIC-SBD 650V 4A DFN8X8Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 263pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A Current - Reverse Leakage @ Vr: 55 µA @ 650 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TRS4V65H,LQ | Toshiba Semiconductor and Storage |
Description: G3 SIC-SBD 650V 4A DFN8X8Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 263pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A Current - Reverse Leakage @ Vr: 55 µA @ 650 V |
на замовлення 4728 шт: термін постачання 21-31 дні (днів) |
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TRS6V65H,LQ | Toshiba Semiconductor and Storage |
Description: G3 SIC-SBD 650V 6A DFN8X8Packaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 392pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A Current - Reverse Leakage @ Vr: 70 µA @ 650 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TRS6V65H,LQ | Toshiba Semiconductor and Storage |
Description: G3 SIC-SBD 650V 6A DFN8X8Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 392pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A Current - Reverse Leakage @ Vr: 70 µA @ 650 V |
на замовлення 4803 шт: термін постачання 21-31 дні (днів) |
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TRS8V65H,LQ | Toshiba Semiconductor and Storage |
Description: DIODE SIL CARBIDE 650V 8A 4DFNEPPackaging: Tape & Reel (TR) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 520pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A Current - Reverse Leakage @ Vr: 90 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TRS8V65H,LQ | Toshiba Semiconductor and Storage |
Description: DIODE SIL CARBIDE 650V 8A 4DFNEPPackaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 520pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: 4-DFN-EP (8x8) Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A Current - Reverse Leakage @ Vr: 90 µA @ 650 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TRS2E65H,S1Q | Toshiba Semiconductor and Storage |
Description: G3 SIC-SBD 650V 2A TO-220-2LPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 135pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
на замовлення 333 шт: термін постачання 21-31 дні (днів) |
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| TLP785(Y-LF6,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TC7S00F,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.73 грн |
| 6000+ | 4.41 грн |
| 9000+ | 4.33 грн |
| RN2901,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Supplier Device Package: US6
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Supplier Device Package: US6
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.46 грн |
| 6000+ | 5.60 грн |
| RN2901,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Description: AUTO AEC-Q TR PNPX2 BRT, Q1BSR=4
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.27 грн |
| 13+ | 25.13 грн |
| 100+ | 14.22 грн |
| 500+ | 8.84 грн |
| 1000+ | 6.78 грн |
| RN2901FE,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Supplier Device Package: ES6
Resistor - Emitter Base (R2): 4.7kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 6.54 грн |
| 8000+ | 5.95 грн |
| RN2901FE,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ES6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 15+ | 21.51 грн |
| 100+ | 13.42 грн |
| 500+ | 8.62 грн |
| 1000+ | 6.63 грн |
| 2000+ | 5.97 грн |
| 74LCX157FT |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 74LCX157FT |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
Description: PB-F LCX TOTAL 16 CMOS LOGIC
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOPB
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 28.22 грн |
| 14+ | 22.12 грн |
| 25+ | 20.26 грн |
| 100+ | 14.15 грн |
| 250+ | 12.82 грн |
| 500+ | 10.61 грн |
| 1000+ | 7.83 грн |
| 74LCX14FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.35V ~ 2.2V
Input Logic Level - Low: 0.3V ~ 0.6V
Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 10.17 грн |
| 74VHCT00AFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 7.99 грн |
| 74VHCT00AFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 2610 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.60 грн |
| 24+ | 12.76 грн |
| 27+ | 11.29 грн |
| 100+ | 9.10 грн |
| 250+ | 8.38 грн |
| 500+ | 7.95 грн |
| 1000+ | 7.47 грн |
| 74LCX540FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 3.6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUFFER INVERT 3.6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 14.10 грн |
| 5000+ | 12.53 грн |
| 7500+ | 12.01 грн |
| 74VHC174FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SGL 6-BIT 16-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-TSSOPB
Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
Grade: Automotive
Number of Bits per Element: 6
Qualification: AEC-Q100
Description: IC FF D-TYPE SGL 6-BIT 16-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 16-TSSOPB
Max Propagation Delay @ V, Max CL: 9.2ns @ 5V, 50pF
Grade: Automotive
Number of Bits per Element: 6
Qualification: AEC-Q100
на замовлення 1150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.68 грн |
| 29+ | 10.57 грн |
| 33+ | 9.36 грн |
| 100+ | 7.52 грн |
| 250+ | 6.91 грн |
| 500+ | 6.54 грн |
| 1000+ | 6.14 грн |
| 74VHC373FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC D-TYPE 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5ns
Supplier Device Package: 20-TSSOP
Description: IC D-TYPE 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5ns
Supplier Device Package: 20-TSSOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 74VHC373FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC D-TYPE 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5ns
Supplier Device Package: 20-TSSOP
Description: IC D-TYPE 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5ns
Supplier Device Package: 20-TSSOP
на замовлення 1253 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.30 грн |
| 19+ | 16.23 грн |
| 25+ | 14.43 грн |
| 100+ | 11.69 грн |
| 250+ | 10.81 грн |
| 500+ | 10.27 грн |
| 1000+ | 9.67 грн |
| 74LCX574FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Number of Bits per Element: 8
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Supplier Device Package: 20-TSSOP
Input Capacitance: 7 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Number of Bits per Element: 8
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Supplier Device Package: 20-TSSOP
Input Capacitance: 7 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 74LCX574FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Number of Bits per Element: 8
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Supplier Device Package: 20-TSSOP
Input Capacitance: 7 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Number of Bits per Element: 8
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Supplier Device Package: 20-TSSOP
Input Capacitance: 7 pF
Clock Frequency: 150 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Current - Quiescent (Iq): 10 µA
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Type: D-Type
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 2402 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.43 грн |
| 17+ | 18.27 грн |
| 25+ | 16.21 грн |
| 100+ | 13.16 грн |
| 250+ | 12.17 грн |
| 500+ | 11.58 грн |
| 1000+ | 10.91 грн |
| TCR2DG25,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 200MA 4-WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 75dB ~ 50dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.13V @ 100mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 2.5V 200MA 4-WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
PSRR: 75dB ~ 50dB (1kHz ~ 100kHz)
Voltage Dropout (Max): 0.13V @ 100mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLP5754(D4-TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 3A, 3A
Technology: Optical Coupling
Current - Peak Output: 4A
Voltage - Forward (Vf) (Typ): 1.55V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 3A, 3A
Technology: Optical Coupling
Current - Peak Output: 4A
Voltage - Forward (Vf) (Typ): 1.55V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 72.10 грн |
| TLP5754(D4-TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 3A, 3A
Technology: Optical Coupling
Current - Peak Output: 4A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 3A, 3A
Technology: Optical Coupling
Current - Peak Output: 4A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
на замовлення 2238 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.25 грн |
| 10+ | 133.97 грн |
| 100+ | 103.85 грн |
| 500+ | 85.02 грн |
| TLP5754(TP4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 85.57 грн |
| TLP5754(TP4,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 2849 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.12 грн |
| 10+ | 131.56 грн |
| 100+ | 101.89 грн |
| 500+ | 83.37 грн |
| TC7SPB9306TU,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Supplier Device Package: UF6
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: IC BUS SWITCH 1 X 1:1 UF6
Supplier Device Package: UF6
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC7SPB9306TU,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 1 X 1:1 UF6
Supplier Device Package: UF6
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: IC BUS SWITCH 1 X 1:1 UF6
Supplier Device Package: UF6
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.57 грн |
| 13+ | 23.47 грн |
| 25+ | 21.50 грн |
| 100+ | 15.01 грн |
| 250+ | 13.60 грн |
| 500+ | 11.26 грн |
| 1000+ | 8.30 грн |
| TC7MPB9307FK(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Supplier Device Package: 20-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 8 x 1:1
Mounting Type: Surface Mount
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Supplier Device Package: 20-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 8 x 1:1
Mounting Type: Surface Mount
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 24.07 грн |
| TC7MPB9307FK(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Supplier Device Package: 20-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 8 x 1:1
Mounting Type: Surface Mount
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Description: IC BUS SWITCH 8 X 1:1 20VSSOP
Supplier Device Package: 20-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 8 x 1:1
Mounting Type: Surface Mount
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
на замовлення 5586 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.27 грн |
| 10+ | 55.25 грн |
| 25+ | 52.44 грн |
| 100+ | 40.42 грн |
| 250+ | 37.78 грн |
| 500+ | 33.39 грн |
| 1000+ | 25.93 грн |
| TC7MPB9327FT(EL) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Supplier Device Package: 14-TSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 2 x 1:2
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Supplier Device Package: 14-TSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 2 x 1:2
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 16.27 грн |
| TC7MPB9327FT(EL) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 14-TSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 2 x 1:2
Description: IC BUS SWITCH 2 X 1:2 14TSSOP
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 14-TSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 2 x 1:2
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.25 грн |
| 10+ | 38.27 грн |
| 25+ | 35.72 грн |
| 100+ | 26.82 грн |
| 250+ | 24.90 грн |
| 500+ | 21.07 грн |
| 1000+ | 16.01 грн |
| TBAT54A,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TBAT54A,LM |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOTT 30V 100MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 2520 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 38+ | 8.08 грн |
| 53+ | 5.72 грн |
| 100+ | 4.66 грн |
| 500+ | 3.39 грн |
| TB6613FTG,8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: 8 H-BRIDGE DRIVER, CAN BE CONFIG
Packaging: Tape & Reel (TR)
Description: 8 H-BRIDGE DRIVER, CAN BE CONFIG
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| RN4989(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.01 грн |
| RN4989(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Description: NPN + PNP BRT Q1BSR=47KOHM Q1BER
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.65 грн |
| 16+ | 19.25 грн |
| 100+ | 10.91 грн |
| 500+ | 6.79 грн |
| 1000+ | 5.20 грн |
| TLP151A(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 42.16 грн |
| 6000+ | 38.91 грн |
| TLP151A(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 3.75KV 1CH GT DVR 6SO-5
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 600mA
Technology: Optical Coupling
Current - Output High, Low: 400mA, 400mA
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 350ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 7534 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.81 грн |
| 10+ | 72.31 грн |
| 100+ | 54.41 грн |
| 500+ | 43.64 грн |
| 1000+ | 41.21 грн |
| TMPM3HNFDADFG |
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Виробник: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 93
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 93
на замовлення 66 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 424.83 грн |
| 10+ | 339.65 грн |
| TMPM3HLFDAUG |
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Виробник: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 57
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 57
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 500.86 грн |
| 10+ | 400.11 грн |
| 25+ | 372.17 грн |
| 160+ | 307.36 грн |
| 320+ | 295.52 грн |
| 640+ | 285.52 грн |
| 1120+ | 274.10 грн |
| TMPM3HPF10BFG |
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Виробник: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 19x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 128-LQFP (14x14)
Number of I/O: 118
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 19x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 128-LQFP (14x14)
Number of I/O: 118
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 513.40 грн |
| 10+ | 409.55 грн |
| 25+ | 381.05 грн |
| 180+ | 312.62 грн |
| TMPM3HMFDAFG |
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Виробник: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 73
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 73
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 587.86 грн |
| 10+ | 469.10 грн |
| 25+ | 436.78 грн |
| 119+ | 368.29 грн |
| TMPM3HNFDAFG |
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Виробник: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Number of I/O: 93
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
Number of I/O: 93
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 598.05 грн |
| 10+ | 477.40 грн |
| 90+ | 406.59 грн |
| TMPM3HQFDAFG |
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Виробник: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Number of I/O: 135
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Processor: ARM® Cortex®-M3
Description: MCU,M3,120MHZ,512KBMEM/66KBRAM,Q
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Number of I/O: 135
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Processor: ARM® Cortex®-M3
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 715.62 грн |
| 10+ | 571.07 грн |
| 60+ | 500.84 грн |
| TMPM3HNF10BFG |
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Виробник: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Number of I/O: 92
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C
RAM Size: 128K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Number of I/O: 92
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 17x12b SAR; D/A 2x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C
RAM Size: 128K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 120MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 811.25 грн |
| 10+ | 647.30 грн |
| 90+ | 554.57 грн |
| TMPM3HQF10BFG |
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Виробник: Toshiba Semiconductor and Storage
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 134
Description: MCU,M3,120MHZ,1MBMEM/130KBRAM,QF
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 21x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 134
на замовлення 95 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 952.33 грн |
| 10+ | 759.84 грн |
| 60+ | 669.22 грн |
| TDTA114E,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TDTA114E,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
на замовлення 2399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.54 грн |
| 43+ | 7.09 грн |
| 100+ | 4.39 грн |
| 500+ | 2.99 грн |
| 1000+ | 2.63 грн |
| TC7WU04FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP 8SSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Input Logic Level - Low: 0.3V ~ 1.2V
Input Logic Level - High: 1.7V ~ 4.8V
Supplier Device Package: 8-SSOP
Number of Inputs: 3
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Description: IC INVERTER 3CH 3-INP 8SSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Input Logic Level - Low: 0.3V ~ 1.2V
Input Logic Level - High: 1.7V ~ 4.8V
Supplier Device Package: 8-SSOP
Number of Inputs: 3
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.19 грн |
| 6000+ | 7.41 грн |
| TC7WU04FU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP 8SSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Input Logic Level - Low: 0.3V ~ 1.2V
Input Logic Level - High: 1.7V ~ 4.8V
Supplier Device Package: 8-SSOP
Number of Inputs: 3
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Description: IC INVERTER 3CH 3-INP 8SSOP
Current - Quiescent (Max): 1 µA
Number of Circuits: 3
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Input Logic Level - Low: 0.3V ~ 1.2V
Input Logic Level - High: 1.7V ~ 4.8V
Supplier Device Package: 8-SSOP
Number of Inputs: 3
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
на замовлення 8040 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.00 грн |
| 14+ | 22.49 грн |
| 25+ | 20.56 грн |
| 100+ | 14.35 грн |
| 250+ | 13.01 грн |
| 500+ | 10.76 грн |
| 1000+ | 7.94 грн |
| TDTA123J,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TDTA123J,LM |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 10.97 грн |
| 47+ | 6.49 грн |
| 100+ | 4.02 грн |
| 500+ | 2.74 грн |
| 1000+ | 2.40 грн |
| TRS4V65H,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 56.46 грн |
| TRS4V65H,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
Description: G3 SIC-SBD 650V 4A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 263pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 4 A
Current - Reverse Leakage @ Vr: 55 µA @ 650 V
на замовлення 4728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.12 грн |
| 10+ | 116.54 грн |
| 100+ | 79.98 грн |
| 500+ | 60.38 грн |
| 1000+ | 55.66 грн |
| TRS6V65H,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 71.03 грн |
| TRS6V65H,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Description: G3 SIC-SBD 650V 6A DFN8X8
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 392pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
на замовлення 4803 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 221.82 грн |
| 10+ | 138.80 грн |
| 100+ | 96.21 грн |
| 500+ | 73.19 грн |
| 1000+ | 67.69 грн |
| TRS8V65H,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TRS8V65H,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A 4DFNEP
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 520pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: 4-DFN-EP (8x8)
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 238.28 грн |
| 10+ | 152.47 грн |
| 100+ | 114.27 грн |
| 500+ | 87.44 грн |
| 1000+ | 81.08 грн |
| TRS2E65H,S1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: G3 SIC-SBD 650V 2A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: G3 SIC-SBD 650V 2A TO-220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 135pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
на замовлення 333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.28 грн |
| 10+ | 93.37 грн |
| 100+ | 63.38 грн |





















