Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Сторінка 66 з 217

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HN1D01F(TE85L,F) HN1D01F(TE85L,F) Toshiba Semiconductor and Storage HN1D01F_datasheet_en_20210625.pdf?did=3439&prodName=HN1D01F Description: DIODE ARRAY GP 80V 100MA SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SM6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+5.51 грн
Мінімальне замовлення: 3000
1SS301,LF 1SS301,LF Toshiba Semiconductor and Storage 1SS301_datasheet_en_20210625.pdf?did=3294&prodName=1SS301 Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+2.28 грн
6000+ 2.07 грн
Мінімальне замовлення: 3000
HN1D02F(TE85L,F) HN1D02F(TE85L,F) Toshiba Semiconductor and Storage HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F Description: DIODE ARRAY GP 80V 100MA SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SM6
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товар відсутній
HN1D02FU(T5L,F,T) HN1D02FU(T5L,F,T) Toshiba Semiconductor and Storage HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU Description: DIODE ARRAY GP 80V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ES6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товар відсутній
RN1703JE(TE85L,F) RN1703JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+5.71 грн
8000+ 4.95 грн
Мінімальне замовлення: 4000
RN1704JE(TE85L,F) RN1704JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN1705JE(TE85L,F) RN1705JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19121&prodName=RN1701JE Description: TRANS 2NPN PREBIAS 0.1W ESV
товар відсутній
RN1508(TE85L,F) RN1508(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18805&prodName=RN1508 Description: TRANS 2NPN PREBIAS 0.3W SMV
товар відсутній
RN1509(TE85L,F) RN1509(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18805&prodName=RN1508 Description: TRANS 2NPN PREBIAS 0.3W SMV
товар відсутній
RN1511(TE85L,F) RN1511(TE85L,F) Toshiba Semiconductor and Storage RN1510_datasheet_en_20191114.pdf?did=18807&prodName=RN1510 Description: TRANS 2NPN PREBIAS 0.3W SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+5.71 грн
Мінімальне замовлення: 3000
RN2701JE(TE85L,F) RN2701JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN2703JE(TE85L,F) RN2703JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
4000+5.96 грн
8000+ 5.16 грн
12000+ 4.59 грн
Мінімальне замовлення: 4000
RN2704JE(TE85L,F) RN2704JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
товар відсутній
RN2705JE(TE85L,F) RN2705JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19089&prodName=RN2705JE Description: TRANS 2PNP PREBIAS 0.1W ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+6.24 грн
Мінімальне замовлення: 4000
RN2707JE(TE85L,F) RN2707JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN2708JE(TE85L,F) RN2708JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN2709JE(TE85L,F) RN2709JE(TE85L,F) Toshiba Semiconductor and Storage RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+6.07 грн
Мінімальне замовлення: 4000
RN2710JE(TE85L,F) RN2710JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19108&prodName=RN2711JE Description: TRANS 2PNP PREBIAS 0.1W ESV
товар відсутній
RN2711JE(TE85L,F) RN2711JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19108&prodName=RN2711JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN2712JE(TE85L,F) RN2712JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=565&prodName=RN2713JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Supplier Device Package: ESV
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+6.07 грн
Мінімальне замовлення: 4000
RN2713JE(TE85L,F) RN2713JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=565&prodName=RN2713JE Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN2504(TE85L,F) RN2504(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18887&prodName=RN2501 Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
Part Status: Active
товар відсутній
RN2507(TE85L,F) RN2507(TE85L,F) Toshiba Semiconductor and Storage RN2507-09.pdf Description: TRANS 2PNP PREBIAS 0.3W SMV
товар відсутній
RN2510(TE85L,F) RN2510(TE85L,F) Toshiba Semiconductor and Storage RN2510_datasheet_en_20191121.pdf?did=18892&prodName=RN2510 Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMV
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+5.25 грн
Мінімальне замовлення: 3000
RN2511(TE85L,F) RN2511(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2510 Description: TRANS 2PNP PREBIAS 0.3W SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN4981FE(TE85L,F) RN4981FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4981FE Description: TRAN DUAL NPN/PNP 50V 100MA ES6
товар відсутній
RN4982FE,LF(CT RN4982FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19043&prodName=RN4982FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товар відсутній
RN4983FE,LF(CT RN4983FE,LF(CT Toshiba Semiconductor and Storage RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
товар відсутній
RN4984FE,LF(CB RN4984FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4984FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
RN4985FE(TE85L,F) RN4985FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4985FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товар відсутній
RN4987FE(T5L,F,T) RN4987FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4987FE Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
товар відсутній
RN4988FE(TE85L,F) RN4988FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4988FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товар відсутній
RN4989FE(TE85L,F) RN4989FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4989FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товар відсутній
RN4990FE(T5L,F,T) RN4990FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4990FE Description: TRAN DUAL NPN/PNP 50V 100MA ES6
товар відсутній
RN4991FE(TE85L,F) RN4991FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4991FE Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товар відсутній
RN1902FE,LF(CT RN1902FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19130&prodName=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1903FE(TE85L,F) RN1903FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1904FE,LF(CT RN1904FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19130&prodName=RN1904FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1905FE(TE85L,F) RN1905FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905FE Description: TRAN DUAL NPN ES6 50V 100A
товар відсутній
RN1906FE(T5L,F,T) RN1906FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1907FE,LF(CT RN1907FE,LF(CT Toshiba Semiconductor and Storage RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
товар відсутній
RN1908FE(TE85L,F) RN1908FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19126&prodName=RN1909FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
товар відсутній
RN1909FE(TE85L,F) RN1909FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19126&prodName=RN1909FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1910FE(T5L,F,T) RN1910FE(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1911FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1967FE(TE85L,F) RN1967FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1968FE(TE85L,F) RN1968FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1969FE(TE85L,F) RN1969FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1967FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1970FE(TE85L,F) RN1970FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1970FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1971FE(TE85L,F) RN1971FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1970FE Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1601(TE85L,F) RN1601(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1604(TE85L,F) RN1604(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1608(TE85L,F) RN1608(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1609(TE85L,F) RN1609(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18811&prodName=RN1607 Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1610(TE85L,F) RN1610(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18815&prodName=RN1610 Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1611(TE85L,F) RN1611(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18815&prodName=RN1610 Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1673(TE85L,F) RN1673(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1673 Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1905(T5L,F,T) RN1905(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
товар відсутній
RN1908(T5L,F,T) RN1908(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
товар відсутній
RN1909(T5L,F,T) RN1909(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1907 Description: TRANS 2NPN PREBIAS 0.2W US6
товар відсутній
RN1910,LF(CT RN1910,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1910 Description: TRANS 2NPN PREBIAS 0.1W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
HN1D01F(TE85L,F) HN1D01F_datasheet_en_20210625.pdf?did=3439&prodName=HN1D01F
HN1D01F(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SM6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.51 грн
Мінімальне замовлення: 3000
1SS301,LF 1SS301_datasheet_en_20210625.pdf?did=3294&prodName=1SS301
1SS301,LF
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.28 грн
6000+ 2.07 грн
Мінімальне замовлення: 3000
HN1D02F(TE85L,F) HN1D02F_datasheet_en_20210625.pdf?did=3617&prodName=HN1D02F
HN1D02F(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SM6
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товар відсутній
HN1D02FU(T5L,F,T) HN1D02FU_datasheet_en_20210625.pdf?did=3455&prodName=HN1D02FU
HN1D02FU(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ES6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
товар відсутній
RN1703JE(TE85L,F) docget.jsp?did=19121&prodName=RN1701JE
RN1703JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+5.71 грн
8000+ 4.95 грн
Мінімальне замовлення: 4000
RN1704JE(TE85L,F) docget.jsp?did=19121&prodName=RN1701JE
RN1704JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN1705JE(TE85L,F) docget.jsp?did=19121&prodName=RN1701JE
RN1705JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ESV
товар відсутній
RN1508(TE85L,F) docget.jsp?did=18805&prodName=RN1508
RN1508(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
товар відсутній
RN1509(TE85L,F) docget.jsp?did=18805&prodName=RN1508
RN1509(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
товар відсутній
RN1511(TE85L,F) RN1510_datasheet_en_20191114.pdf?did=18807&prodName=RN1510
RN1511(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.71 грн
Мінімальне замовлення: 3000
RN2701JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2701JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN2703JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2703JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+5.96 грн
8000+ 5.16 грн
12000+ 4.59 грн
Мінімальне замовлення: 4000
RN2704JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2704JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
товар відсутній
RN2705JE(TE85L,F) docget.jsp?did=19089&prodName=RN2705JE
RN2705JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+6.24 грн
Мінімальне замовлення: 4000
RN2707JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2707JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN2708JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2708JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN2709JE(TE85L,F) RN2708JE_datasheet_en_20140301.pdf?did=19106&prodName=RN2708JE
RN2709JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+6.07 грн
Мінімальне замовлення: 4000
RN2710JE(TE85L,F) docget.jsp?did=19108&prodName=RN2711JE
RN2710JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
товар відсутній
RN2711JE(TE85L,F) docget.jsp?did=19108&prodName=RN2711JE
RN2711JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN2712JE(TE85L,F) docget.jsp?did=565&prodName=RN2713JE
RN2712JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Supplier Device Package: ESV
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4000+6.07 грн
Мінімальне замовлення: 4000
RN2713JE(TE85L,F) docget.jsp?did=565&prodName=RN2713JE
RN2713JE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Supplier Device Package: ESV
Part Status: Active
товар відсутній
RN2504(TE85L,F) docget.jsp?did=18887&prodName=RN2501
RN2504(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
Part Status: Active
товар відсутній
RN2507(TE85L,F) RN2507-09.pdf
RN2507(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
товар відсутній
RN2510(TE85L,F) RN2510_datasheet_en_20191121.pdf?did=18892&prodName=RN2510
RN2510(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SMV
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.25 грн
Мінімальне замовлення: 3000
RN2511(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2510
RN2511(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
RN4981FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4981FE
RN4981FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
товар відсутній
RN4982FE,LF(CT docget.jsp?did=19043&prodName=RN4982FE
RN4982FE,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товар відсутній
RN4983FE,LF(CT RN4983FE_datasheet_en_20210818.pdf?did=19045&prodName=RN4983FE
RN4983FE,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
товар відсутній
RN4984FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN4984FE
RN4984FE,LF(CB
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
RN4985FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4985FE
RN4985FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товар відсутній
RN4987FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4987FE
RN4987FE(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/ PNP 50V 100MA ES6
товар відсутній
RN4988FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4988FE
RN4988FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товар відсутній
RN4989FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4989FE
RN4989FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товар відсутній
RN4990FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4990FE
RN4990FE(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN/PNP 50V 100MA ES6
товар відсутній
RN4991FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN4991FE
RN4991FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.1W ES6
товар відсутній
RN1902FE,LF(CT docget.jsp?did=19130&prodName=RN1902FE
RN1902FE,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1903FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1902FE
RN1903FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1904FE,LF(CT docget.jsp?did=19130&prodName=RN1904FE
RN1904FE,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1905FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1905FE
RN1905FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRAN DUAL NPN ES6 50V 100A
товар відсутній
RN1906FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1902FE
RN1906FE(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1907FE,LF(CT RN1909FE_datasheet_en_20210818.pdf?did=19126&prodName=RN1909FE
RN1907FE,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
товар відсутній
RN1908FE(TE85L,F) docget.jsp?did=19126&prodName=RN1909FE
RN1908FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
товар відсутній
RN1909FE(TE85L,F) docget.jsp?did=19126&prodName=RN1909FE
RN1909FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1910FE(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1911FE
RN1910FE(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1967FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1967FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1968FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1968FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1969FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1967FE
RN1969FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1970FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1970FE
RN1970FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1971FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1970FE
RN1971FE(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
товар відсутній
RN1601(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1601(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1604(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1604(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1608(TE85L,F) docget.jsp?did=18811&prodName=RN1607
RN1608(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1609(TE85L,F) docget.jsp?did=18811&prodName=RN1607
RN1609(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1610(TE85L,F) docget.jsp?did=18815&prodName=RN1610
RN1610(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1611(TE85L,F) docget.jsp?did=18815&prodName=RN1610
RN1611(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1673(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1673
RN1673(TE85L,F)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
товар відсутній
RN1905(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1905(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
товар відсутній
RN1908(T5L,F,T) docget.jsp?did=18826&prodName=RN1908
RN1908(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
товар відсутній
RN1909(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1907
RN1909(T5L,F,T)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
товар відсутній
RN1910,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1910
RN1910,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
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