| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRFP260PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhancement |
на замовлення 449 шт: термін постачання 21-30 дні (днів) |
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IRFP264PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 24A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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1.5KE6.8CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 2mA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 489 шт: термін постачання 21-30 дні (днів) |
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SS34-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs. Mounting: SMD Load current: 3A Kind of package: 7 inch reel Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 850pcs. Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.5V |
на замовлення 1175 шт: термін постачання 21-30 дні (днів) |
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| SS34-E3/9AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel Mounting: SMD Load current: 3A Kind of package: 13 inch reel Max. off-state voltage: 40V Max. forward impulse current: 100A Quantity in set/package: 3500pcs. Case: SMC Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 20mA Max. forward voltage: 0.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR20100CT-E3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.75V Kind of package: tube Quantity in set/package: 50pcs. Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm |
на замовлення 481 шт: термін постачання 21-30 дні (днів) |
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| IHLP5050CEER100M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Type of inductor: wire Inductance: 10µH Operating current: 7A Resistance: 30.4mΩ Tolerance: ±20% Operating temperature: -55...125°C Body dimensions: 12.9x12.9x3.5mm Manufacturer series: IHLP Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEER1R0M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 1µH Resistance: 3.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 24A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IHLP5050CEER1R5M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 1.5µH Resistance: 5.1mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 19A Tolerance: ±20% |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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| IHLP5050CEER2R2M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 2.2µH Resistance: 7.2mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 16A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEER3R3M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 3.3µH Resistance: 11mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 12A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEER4R7M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 4.7µH Resistance: 14.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 10A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEER5R6M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 5.6µH Resistance: 18.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 9.5A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEER6R8M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 6.8µH Resistance: 19.8mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 9A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEERR47M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 0.47µH Resistance: 1.6mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 32A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050CEERR68M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 0.68µH Resistance: 2.3mΩ Body dimensions: 12.9x12.9x3.5mm Operating current: 28A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050EZER100M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 10µH Resistance: 21.4mΩ Body dimensions: 12.9x12.9x5mm Operating current: 9A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050EZER2R2M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 2.2µH Resistance: 4.6mΩ Body dimensions: 12.9x12.9x5mm Operating current: 20A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050EZER3R3M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 3.3µH Resistance: 7.7mΩ Body dimensions: 12.9x12.9x5mm Operating current: 15A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050EZER4R7M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 4.7µH Resistance: 12.8mΩ Body dimensions: 12.9x12.9x5mm Operating current: 12A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050EZER6R8M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 6.8µH Resistance: 15.4mΩ Body dimensions: 12.9x12.9x5mm Operating current: 11A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050FDER100M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Type of inductor: wire Mounting: SMD Inductance: 10µH Operating current: 10A Resistance: 16.4mΩ Tolerance: ±20% Body dimensions: 12.9x12.9x6.4mm Operating temperature: -55...125°C Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050FDER1R0M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 1µH Resistance: 1.7mΩ Body dimensions: 12.9x12.9x6.4mm Operating current: 32A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050FDER2R2M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 2.2µH Resistance: 3.5mΩ Body dimensions: 12.9x12.9x6.4mm Operating current: 22A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IHLP5050FDER3R3M01 | VISHAY |
Category: InductorsDescription: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm Inductor features: high current; low DCR/uH value; shielded; very low buzz noise Manufacturer series: IHLP Mounting: SMD Type of inductor: wire Operating temperature: -55...125°C Inductance: 3.3µH Resistance: 5.7mΩ Body dimensions: 12.9x12.9x6.4mm Operating current: 18A Tolerance: ±20% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2N7002-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 80mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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2N7002K-T1-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 0.8A Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2N7002K-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.19A Pulsed drain current: 0.8A Power dissipation: 0.14W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 4931 шт: термін постачання 21-30 дні (днів) |
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| SIHB15N65E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP15N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SF1600-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns Mounting: THT Type of diode: rectifying Case: SOD57 Semiconductor structure: single diode Reverse recovery time: 75ns Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Max. forward voltage: 3.4V Load current: 1A Kind of package: Ammo Pack Max. forward impulse current: 30A Max. off-state voltage: 1.6kV |
на замовлення 1803 шт: термін постачання 21-30 дні (днів) |
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SS16-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 13 inch reel Leakage current: 5mA Quantity in set/package: 7500pcs. |
на замовлення 5196 шт: термін постачання 21-30 дні (днів) |
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SS16-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
на замовлення 5883 шт: термін постачання 21-30 дні (днів) |
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SS16HE3_B/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Application: automotive industry |
на замовлення 7028 шт: термін постачання 21-30 дні (днів) |
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CRCW04024K70FKED | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; 50V; -55÷155°C Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 4.7kΩ Power: 62.5mW Tolerance: ±1% Operating voltage: 50V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Mounting: SMD |
на замовлення 23107 шт: термін постачання 21-30 дні (днів) |
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CRCW04024K70FKTDBC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402; 50V Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 4.7kΩ Power: 62.5mW Tolerance: ±1% Operating voltage: 50V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Manufacturer series: CRCW0402 Mounting: SMD |
на замовлення 31100 шт: термін постачання 21-30 дні (днів) |
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CRCW0603240RFKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 240Ω Power: 0.1W Tolerance: ±1% Operating voltage: 75V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 20600 шт: термін постачання 21-30 дні (днів) |
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IRF840PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 1938 шт: термін постачання 21-30 дні (днів) |
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BZX55B10-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
на замовлення 426 шт: термін постачання 21-30 дні (днів) |
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GRC00JG4702W00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 47µF Operating voltage: 450V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x25mm |
на замовлення 1674 шт: термін постачання 21-30 дні (днів) |
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GRC00JG3321E00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 3.3mF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -40...105°C Dimensions: 16x25mm Service life: 2000h |
на замовлення 214 шт: термін постачання 21-30 дні (днів) |
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IRF530PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 88W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.16Ω Gate charge: 26nC |
на замовлення 2941 шт: термін постачання 21-30 дні (днів) |
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IRF530SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 88W Case: D2PAK; TO263 Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.16Ω Gate charge: 26nC Pulsed drain current: 56A |
на замовлення 522 шт: термін постачання 21-30 дні (днів) |
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BZX55C10-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 1049 шт: термін постачання 21-30 дні (днів) |
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BZX55C12-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 14075 шт: термін постачання 21-30 дні (днів) |
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MUR460-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: 13 inch reel Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.05V Reverse recovery time: 50ns Quantity in set/package: 1400pcs. |
на замовлення 1370 шт: термін постачання 21-30 дні (днів) |
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1N4007-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF Quantity in set/package: 5500pcs. |
на замовлення 21415 шт: термін постачання 21-30 дні (днів) |
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1N4007-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 15pF |
на замовлення 9331 шт: термін постачання 21-30 дні (днів) |
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293D476X0025D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
на замовлення 2802 шт: термін постачання 21-30 дні (днів) |
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293D476X9025D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 47µF Operating voltage: 25V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
на замовлення 2016 шт: термін постачання 21-30 дні (днів) |
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VJ1206Y104KXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 0.1µF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 7346 шт: термін постачання 21-30 дні (днів) |
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SM6T6V8A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1mA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated |
на замовлення 3315 шт: термін постачання 21-30 дні (днів) |
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1.5KE6.8A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel Type of diode: TVS Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1mA Peak pulse power dissipation: 1.5kW Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE |
на замовлення 515 шт: термін постачання 21-30 дні (днів) |
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1N4148-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 8ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Kind of package: Ammo Pack Max. forward impulse current: 2A Case: DO35 Reverse recovery time: 8ns Max. load current: 0.5A |
на замовлення 31657 шт: термін постачання 21-30 дні (днів) |
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| SIHA20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB20N50E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SiHH20N50E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 53A Power dissipation: 174W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 147mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP20N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| IRFP260PBF | ![]() |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 449 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.78 грн |
| 25+ | 183.69 грн |
| 50+ | 173.85 грн |
| 100+ | 167.29 грн |
| IRFP264PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 63 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 418.61 грн |
| 10+ | 264.88 грн |
| 25+ | 240.28 грн |
| 50+ | 225.52 грн |
| 1.5KE6.8CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 489 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.98 грн |
| 14+ | 30.59 грн |
| 100+ | 23.54 грн |
| SS34-E3/57T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Load current: 3A
Kind of package: 7 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 7 inch reel; 850pcs.
Mounting: SMD
Load current: 3A
Kind of package: 7 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 850pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.5V
на замовлення 1175 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.38 грн |
| 100+ | 19.60 грн |
| 250+ | 16.40 грн |
| 500+ | 13.61 грн |
| 850+ | 11.32 грн |
| SS34-E3/9AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Load current: 3A
Kind of package: 13 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 20mA
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; 13 inch reel
Mounting: SMD
Load current: 3A
Kind of package: 13 inch reel
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Quantity in set/package: 3500pcs.
Case: SMC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 20mA
Max. forward voltage: 0.5V
товару немає в наявності
В кошику
од. на суму грн.
| MBR20100CT-E3/4W |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
на замовлення 481 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.61 грн |
| 6+ | 77.09 грн |
| 10+ | 72.17 грн |
| 25+ | 63.96 грн |
| 50+ | 59.04 грн |
| 100+ | 54.12 грн |
| IHLP5050CEER100M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Type of inductor: wire
Inductance: 10µH
Operating current: 7A
Resistance: 30.4mΩ
Tolerance: ±20%
Operating temperature: -55...125°C
Body dimensions: 12.9x12.9x3.5mm
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Mounting: SMD
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 7A; 30.4mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Type of inductor: wire
Inductance: 10µH
Operating current: 7A
Resistance: 30.4mΩ
Tolerance: ±20%
Operating temperature: -55...125°C
Body dimensions: 12.9x12.9x3.5mm
Manufacturer series: IHLP
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| IHLP5050CEER1R0M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 3.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 24A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 24A; 3.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 3.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 24A
Tolerance: ±20%
товару немає в наявності
В кошику
од. на суму грн.
| IHLP5050CEER1R5M01 |
![]() |
Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1.5µH
Resistance: 5.1mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 19A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 1.5uH; 19A; 5.1mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1.5µH
Resistance: 5.1mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 19A
Tolerance: ±20%
на замовлення 500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.30 грн |
| 500+ | 40.10 грн |
| IHLP5050CEER2R2M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 7.2mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 16A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 16A; 7.2mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 7.2mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 16A
Tolerance: ±20%
товару немає в наявності
В кошику
од. на суму грн.
| IHLP5050CEER3R3M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 11mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 12A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 12A; 11mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 11mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 12A
Tolerance: ±20%
товару немає в наявності
В кошику
од. на суму грн.
| IHLP5050CEER4R7M01 |
![]() |
Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 14.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 10A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 10A; 14.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 14.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 10A
Tolerance: ±20%
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| IHLP5050CEER5R6M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 5.6µH
Resistance: 18.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9.5A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 5.6uH; 9.5A; 18.3mΩ; ±20%; IHLP; -55÷125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 5.6µH
Resistance: 18.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9.5A
Tolerance: ±20%
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| IHLP5050CEER6R8M01 |
![]() |
Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 19.8mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 9A; 19.8mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 19.8mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 9A
Tolerance: ±20%
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| IHLP5050CEERR47M01 |
![]() |
Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.47µH
Resistance: 1.6mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 0.47uH; 32A; 1.6mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.47µH
Resistance: 1.6mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 32A
Tolerance: ±20%
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| IHLP5050CEERR68M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.68µH
Resistance: 2.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 0.68uH; 28A; 2.3mΩ; ±20%; IHLP; 12.9x12.9x3.5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 0.68µH
Resistance: 2.3mΩ
Body dimensions: 12.9x12.9x3.5mm
Operating current: 28A
Tolerance: ±20%
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| IHLP5050EZER100M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 21.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 9A; 21.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 10µH
Resistance: 21.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 9A
Tolerance: ±20%
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| IHLP5050EZER2R2M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 4.6mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 20A; 4.6mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 4.6mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 20A
Tolerance: ±20%
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| IHLP5050EZER3R3M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 7.7mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 15A; 7.7mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 7.7mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 15A
Tolerance: ±20%
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| IHLP5050EZER4R7M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 12.8mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 4.7uH; 12A; 12.8mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 4.7µH
Resistance: 12.8mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 12A
Tolerance: ±20%
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| IHLP5050EZER6R8M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 15.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 6.8uH; 11A; 15.4mΩ; ±20%; IHLP; 12.9x12.9x5mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 6.8µH
Resistance: 15.4mΩ
Body dimensions: 12.9x12.9x5mm
Operating current: 11A
Tolerance: ±20%
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| IHLP5050FDER100M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 10A
Resistance: 16.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating temperature: -55...125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 10A; 16.4mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Type of inductor: wire
Mounting: SMD
Inductance: 10µH
Operating current: 10A
Resistance: 16.4mΩ
Tolerance: ±20%
Body dimensions: 12.9x12.9x6.4mm
Operating temperature: -55...125°C
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
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| IHLP5050FDER1R0M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 1.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 32A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 32A; 1.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 1µH
Resistance: 1.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 32A
Tolerance: ±20%
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| IHLP5050FDER2R2M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 3.5mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 22A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 2.2uH; 22A; 3.5mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 2.2µH
Resistance: 3.5mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 22A
Tolerance: ±20%
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| IHLP5050FDER3R3M01 |
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Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 5.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 18A
Tolerance: ±20%
Category: Inductors
Description: Inductor: wire; SMD; 3.3uH; 18A; 5.7mΩ; ±20%; IHLP; 12.9x12.9x6.4mm
Inductor features: high current; low DCR/uH value; shielded; very low buzz noise
Manufacturer series: IHLP
Mounting: SMD
Type of inductor: wire
Operating temperature: -55...125°C
Inductance: 3.3µH
Resistance: 5.7mΩ
Body dimensions: 12.9x12.9x6.4mm
Operating current: 18A
Tolerance: ±20%
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| 2N7002-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.70 грн |
| 2N7002K-T1-E3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Version: ESD
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| 2N7002K-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; Idm: 0.8A; 0.14W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.19A
Pulsed drain current: 0.8A
Power dissipation: 0.14W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 4931 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.01 грн |
| 39+ | 10.66 грн |
| 44+ | 9.43 грн |
| 57+ | 7.28 грн |
| 100+ | 6.57 грн |
| 500+ | 5.20 грн |
| 3000+ | 4.04 грн |
| SIHB15N65E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHF15N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| SIHP15N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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| SF1600-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Mounting: THT
Type of diode: rectifying
Case: SOD57
Semiconductor structure: single diode
Reverse recovery time: 75ns
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward voltage: 3.4V
Load current: 1A
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Max. off-state voltage: 1.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 1A; Ammo Pack; Ifsm: 30A; SOD57; 75ns
Mounting: THT
Type of diode: rectifying
Case: SOD57
Semiconductor structure: single diode
Reverse recovery time: 75ns
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward voltage: 3.4V
Load current: 1A
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Max. off-state voltage: 1.6kV
на замовлення 1803 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.26 грн |
| 19+ | 22.22 грн |
| 100+ | 19.76 грн |
| SS16-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Leakage current: 5mA
Quantity in set/package: 7500pcs.
на замовлення 5196 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.83 грн |
| 63+ | 6.56 грн |
| 70+ | 5.87 грн |
| 100+ | 5.58 грн |
| 500+ | 4.90 грн |
| 1000+ | 4.62 грн |
| 2500+ | 4.23 грн |
| 5000+ | 3.94 грн |
| SS16-E3/61T | ![]() |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
на замовлення 5883 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.13 грн |
| 36+ | 11.64 грн |
| 39+ | 10.74 грн |
| 50+ | 8.55 грн |
| 100+ | 7.58 грн |
| 500+ | 5.33 грн |
| 1000+ | 4.36 грн |
| 1300+ | 4.00 грн |
| 1800+ | 3.54 грн |
| SS16HE3_B/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
на замовлення 7028 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.78 грн |
| 34+ | 12.22 грн |
| 38+ | 10.82 грн |
| 50+ | 9.76 грн |
| 100+ | 8.61 грн |
| 250+ | 7.22 грн |
| 500+ | 6.15 грн |
| 1000+ | 5.33 грн |
| CRCW04024K70FKED |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 23107 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.95 грн |
| 209+ | 1.97 грн |
| 455+ | 0.90 грн |
| 763+ | 0.54 грн |
| 1000+ | 0.44 грн |
| 2500+ | 0.33 грн |
| 5000+ | 0.28 грн |
| 10000+ | 0.23 грн |
| 20000+ | 0.20 грн |
| CRCW04024K70FKTDBC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402; 50V
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Manufacturer series: CRCW0402
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 4.7kΩ; 62.5mW; ±1%; CRCW0402; 50V
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 4.7kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Manufacturer series: CRCW0402
Mounting: SMD
на замовлення 31100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 400+ | 1.14 грн |
| 1100+ | 0.40 грн |
| 10000+ | 0.09 грн |
| CRCW0603240RFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 240Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 240Ω; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 240Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 20600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.87 грн |
| 500+ | 0.90 грн |
| 1000+ | 0.54 грн |
| 5000+ | 0.22 грн |
| IRF840PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 1938 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 91.85 грн |
| 6+ | 75.45 грн |
| 10+ | 71.35 грн |
| 50+ | 63.14 грн |
| 100+ | 59.86 грн |
| 150+ | 58.22 грн |
| 250+ | 56.58 грн |
| 500+ | 54.12 грн |
| BZX55B10-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
на замовлення 426 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 140+ | 3.22 грн |
| 235+ | 1.78 грн |
| GRC00JG4702W00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 47µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x25mm
на замовлення 1674 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.72 грн |
| 10+ | 41.66 грн |
| 50+ | 33.21 грн |
| 150+ | 30.67 грн |
| 300+ | 28.95 грн |
| 600+ | 28.21 грн |
| GRC00JG3321E00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 16x25mm
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 3300uF; 25VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 3.3mF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 16x25mm
Service life: 2000h
на замовлення 214 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.24 грн |
| 12+ | 35.67 грн |
| 50+ | 28.70 грн |
| 150+ | 22.96 грн |
| IRF530PBF | ![]() |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Gate charge: 26nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Gate charge: 26nC
на замовлення 2941 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.57 грн |
| 12+ | 36.57 грн |
| 13+ | 33.70 грн |
| 50+ | 29.03 грн |
| 100+ | 27.88 грн |
| 500+ | 26.32 грн |
| IRF530SPBF | ![]() |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Gate charge: 26nC
Pulsed drain current: 56A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 88W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Gate charge: 26nC
Pulsed drain current: 56A
на замовлення 522 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.77 грн |
| 50+ | 58.22 грн |
| 100+ | 54.94 грн |
| 250+ | 50.84 грн |
| 500+ | 48.38 грн |
| BZX55C10-TAP | ![]() |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1049 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 100+ | 4.10 грн |
| 136+ | 3.03 грн |
| 173+ | 2.38 грн |
| 224+ | 1.84 грн |
| 250+ | 1.64 грн |
| BZX55C12-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 14075 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.95 грн |
| 76+ | 5.41 грн |
| 124+ | 3.31 грн |
| 500+ | 2.65 грн |
| 1000+ | 2.29 грн |
| 1300+ | 1.98 грн |
| 2500+ | 1.65 грн |
| 5000+ | 1.57 грн |
| MUR460-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 4A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.05V
Reverse recovery time: 50ns
Quantity in set/package: 1400pcs.
на замовлення 1370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.09 грн |
| 17+ | 24.36 грн |
| 100+ | 20.83 грн |
| 500+ | 18.45 грн |
| 1000+ | 18.04 грн |
| 1N4007-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Quantity in set/package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Quantity in set/package: 5500pcs.
на замовлення 21415 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.36 грн |
| 52+ | 8.04 грн |
| 100+ | 4.72 грн |
| 400+ | 3.56 грн |
| 500+ | 3.43 грн |
| 1000+ | 3.07 грн |
| 1500+ | 2.89 грн |
| 2000+ | 2.78 грн |
| 5500+ | 2.48 грн |
| 1N4007-E3/73 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 15pF
на замовлення 9331 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.25 грн |
| 43+ | 9.68 грн |
| 50+ | 8.20 грн |
| 100+ | 4.85 грн |
| 500+ | 3.51 грн |
| 1000+ | 3.10 грн |
| 3000+ | 2.62 грн |
| 6000+ | 2.39 грн |
| 9000+ | 2.29 грн |
| 293D476X0025D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
на замовлення 2802 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 63.59 грн |
| 12+ | 36.16 грн |
| 50+ | 33.70 грн |
| 100+ | 32.80 грн |
| 200+ | 31.82 грн |
| 500+ | 30.75 грн |
| 1000+ | 30.01 грн |
| 2500+ | 29.03 грн |
| 293D476X9025D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 47uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 47µF
Operating voltage: 25V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
на замовлення 2016 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.11 грн |
| 16+ | 27.14 грн |
| 50+ | 22.96 грн |
| 100+ | 21.98 грн |
| 500+ | 20.58 грн |
| 1000+ | 20.17 грн |
| 1500+ | 19.85 грн |
| VJ1206Y104KXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 0.1µF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 7346 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.18 грн |
| 250+ | 1.64 грн |
| 291+ | 1.41 грн |
| 500+ | 1.30 грн |
| 1000+ | 1.24 грн |
| 4000+ | 1.16 грн |
| SM6T6V8A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
на замовлення 3315 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.71 грн |
| 50+ | 8.36 грн |
| 51+ | 8.12 грн |
| 57+ | 7.30 грн |
| 100+ | 6.89 грн |
| 250+ | 6.48 грн |
| 500+ | 6.15 грн |
| 650+ | 5.99 грн |
| 750+ | 5.90 грн |
| 1.5KE6.8A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1mA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
на замовлення 515 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.34 грн |
| 10+ | 42.48 грн |
| 100+ | 30.01 грн |
| 500+ | 22.14 грн |
| 1N4148-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Reverse recovery time: 8ns
Max. load current: 0.5A
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 8ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Reverse recovery time: 8ns
Max. load current: 0.5A
на замовлення 31657 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 122+ | 3.36 грн |
| 171+ | 2.41 грн |
| 195+ | 2.11 грн |
| 500+ | 1.60 грн |
| 1000+ | 1.44 грн |
| 2000+ | 1.31 грн |
| 10000+ | 1.09 грн |
| 20000+ | 1.02 грн |
| SIHA20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SIHB20N50E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHG20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SiHH20N50E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 53A
Power dissipation: 174W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 147mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHP20N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.























