| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRF840ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF840APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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IRF840ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
на замовлення 371 шт: термін постачання 21-30 дні (днів) |
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IRF840ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF840LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 703 шт: термін постачання 21-30 дні (днів) |
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IRF840SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 495 шт: термін постачання 21-30 дні (днів) |
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IRF840STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAS40-05-E3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 0.1µA Max. forward impulse current: 0.6A Kind of package: 7 inch reel Power dissipation: 0.2W Reverse recovery time: 5ns Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
на замовлення 1831 шт: термін постачання 21-30 дні (днів) |
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1.5KE27CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 27.05V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 1183 шт: термін постачання 21-30 дні (днів) |
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1N5822-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.525V Max. forward impulse current: 80A Kind of package: 13 inch reel Quantity in set/package: 1400pcs. |
на замовлення 2520 шт: термін постачання 21-30 дні (днів) |
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BYV26C-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: Ammo Pack Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns |
на замовлення 1385 шт: термін постачання 21-30 дні (днів) |
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BYV26C-TR | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: 10 inch reel Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns Quantity in set/package: 5000pcs. |
на замовлення 1059 шт: термін постачання 21-30 дні (днів) |
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BZX85C27-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 27V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 11354 шт: термін постачання 21-30 дні (днів) |
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1.5KE400A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1463 шт: термін постачання 21-30 дні (днів) |
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IRF740APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 36nC Kind of package: tube |
на замовлення 61 шт: термін постачання 21-30 дні (днів) |
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IRF740ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 36nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF740LCPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 39nC Kind of package: tube |
на замовлення 513 шт: термін постачання 21-30 дні (днів) |
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IRF740PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Kind of channel: enhancement Gate charge: 63nC Kind of package: tube |
на замовлення 745 шт: термін постачання 21-30 дні (днів) |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 63nC Kind of package: tube |
на замовлення 543 шт: термін постачання 21-30 дні (днів) |
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IRF740STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Kind of channel: enhancement Gate charge: 63nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE18CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 498 шт: термін постачання 21-30 дні (днів) |
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1.5KE180A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1530 шт: термін постачання 21-30 дні (днів) |
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1.5KE180CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 1812 шт: термін постачання 21-30 дні (днів) |
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1.5KE18A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1328 шт: термін постачання 21-30 дні (днів) |
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P6KE200A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Manufacturer series: P6KE Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4937-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Capacitance: 12pF Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Leakage current: 0.1mA Features of semiconductor devices: fast switching Quantity in set/package: 5500pcs. |
на замовлення 2875 шт: термін постачання 21-30 дні (днів) |
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1N4937-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Capacitance: 12pF Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Leakage current: 0.1mA Features of semiconductor devices: fast switching |
на замовлення 2758 шт: термін постачання 21-30 дні (днів) |
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SB160-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.65V Max. forward impulse current: 50A Kind of package: 13 inch reel |
на замовлення 6562 шт: термін постачання 21-30 дні (днів) |
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IRLL110TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.93A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 519 шт: термін постачання 21-30 дні (днів) |
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BZX55C3V6-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 7561 шт: термін постачання 21-30 дні (днів) |
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BZX85C3V6-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 3.6V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 1550 шт: термін постачання 21-30 дні (днів) |
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1N5401-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 3A; 13 inch reel; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Quantity in set/package: 1400pcs. Capacitance: 30pF Leakage current: 0.5mA |
на замовлення 1260 шт: термін постачання 21-30 дні (днів) |
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1N5404-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; 13 inch reel; Ifsm: 200A; DO201AD Quantity in set/package: 1400pcs. Leakage current: 0.5mA Max. forward voltage: 1.2V Load current: 3A Max. forward impulse current: 200A Max. off-state voltage: 0.4kV Capacitance: 30pF Case: DO201AD Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Kind of package: 13 inch reel |
на замовлення 2690 шт: термін постачання 21-30 дні (днів) |
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1N5817-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: 13 inch reel |
на замовлення 3080 шт: термін постачання 21-30 дні (днів) |
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1N5817-E3/73 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: Ammo Pack |
на замовлення 7515 шт: термін постачання 21-30 дні (днів) |
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1N5819-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 25A Max. off-state voltage: 40V Kind of package: 13 inch reel |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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1N5819-E3/73 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 25A Max. off-state voltage: 40V Kind of package: Ammo Pack |
на замовлення 1608 шт: термін постачання 21-30 дні (днів) |
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BAV99-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: 7 inch reel Features of semiconductor devices: fast switching; small signal Quantity in set/package: 3000pcs. |
на замовлення 2516 шт: термін постачання 21-30 дні (днів) |
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BAV99-HE3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: 7 inch reel Application: automotive industry Features of semiconductor devices: fast switching; small signal Quantity in set/package: 3000pcs. |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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SI7850DP-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A Kind of package: reel; tape Kind of channel: enhancement Case: PowerPAK® SO8 Type of transistor: N-MOSFET Mounting: SMD Technology: TrenchFET® Gate charge: 27nC On-state resistance: 22mΩ Power dissipation: 0.9W Drain current: 6.2A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 60V Polarisation: unipolar |
на замовлення 2947 шт: термін постачання 21-30 дні (днів) |
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1N4007GP-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 8pF Reverse recovery time: 2µs Quantity in set/package: 5500pcs. Features of semiconductor devices: glass passivated |
на замовлення 12367 шт: термін постачання 21-30 дні (днів) |
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P6KE15CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; 13 inch reel Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28.3A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: 13 inch reel Technology: TransZorb® Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
на замовлення 4023 шт: термін постачання 21-30 дні (днів) |
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IRF730PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
на замовлення 364 шт: термін постачання 21-30 дні (днів) |
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357B0102MXB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometersDescription: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Tolerance: ±20% Power: 1W Potentiometer features: without limiters Characteristics: linear Shaft diameter: 6.35mm Track material: plastic Shaft surface: smooth Shaft length: 14mm Thread length: 8mm L shaft length: 22mm Linearity tolerance: ±2% Mechanical durability: 10000000 cycles Manufacturer series: 357 Fastening thread: 3/8"x32UNEF |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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357B2102MAB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometersDescription: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Tolerance: ±20% Power: 1W Characteristics: linear Shaft diameter: 6.35mm Track material: plastic Shaft surface: smooth Shaft length: 14mm Thread length: 8mm L shaft length: 22mm Linearity tolerance: ±2% Electrical rotation angle: 340° Mechanical durability: 10000000 cycles Manufacturer series: 357 Fastening thread: 3/8"x32UNEF |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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VJ1206A100KXAAC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 2450 шт: термін постачання 21-30 дні (днів) |
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CRCW1206100KFKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 100kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
на замовлення 7627 шт: термін постачання 21-30 дні (днів) |
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CRCW1206100KFKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 100kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
на замовлення 142499 шт: термін постачання 21-30 дні (днів) |
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CRCW1206100KJNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; 200V; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 100kΩ Power: 0.25W Tolerance: ±5% Operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CRCW1206100KJNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; 200V; -55÷155°C Tolerance: ±5% Resistance: 100kΩ Operating temperature: -55...155°C Power: 0.25W Mounting: SMD Operating voltage: 200V Case - inch: 1206 Case - mm: 3216 Type of resistor: thick film |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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SFH6156-3X001T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 3µs Turn-off time: 2.3µs |
на замовлення 599 шт: термін постачання 21-30 дні (днів) |
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BAS85-GS08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW Type of diode: Schottky switching Case: MiniMELF; SOD80 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.24V Max. forward impulse current: 0.6A Kind of package: 7 inch reel Power dissipation: 0.2W Quantity in set/package: 2500pcs. Max. load current: 0.3A |
на замовлення 23793 шт: термін постачання 21-30 дні (днів) |
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BAS85-GS18 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns Type of diode: Schottky switching Case: MiniMELF; SOD80 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 13 inch reel Power dissipation: 0.2W Quantity in set/package: 10000pcs. |
на замовлення 11032 шт: термін постачання 21-30 дні (днів) |
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NTCLE100E3472JB0 | VISHAY |
Category: THT measurement NTC thermistorsDescription: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW Resistance: 4.7kΩ Operating temperature: -40...125°C Power: 0.5W Mounting: THT Material constant B: 3977K Type of sensor: NTC thermistor |
на замовлення 4046 шт: термін постачання 21-30 дні (днів) |
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P16NP472MAB15 | VISHAY |
Category: Cermet single turn potentiometersDescription: Potentiometer: shaft; single turn; 4.7kΩ; 1W; ±20%; linear; cermet Resistance: 4.7kΩ Power: 1W Tolerance: ±20% Temperature coefficient: 150ppm/°C IP rating: IP67 Characteristics: linear Type of potentiometer: shaft Kind of potentiometer: single turn Mounting: soldered Operating temperature: -40...85°C Panel cutout diameter: 10mm Knob dimensions: Ø16x8mm Electrical rotation angle: 270° Leads: solder lugs Track material: cermet Potentiometer features: for industrial use; with knob |
на замовлення 738 шт: термін постачання 21-30 дні (днів) |
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| PA16NP472KAB15 | VISHAY |
Category: Cond. plastic single turn potentiometersDescription: Potentiometer: shaft; single turn; 4.7kΩ; ±10%; 500mW; linear; 16mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 4.7kΩ Tolerance: ±10% Power: 0.5W Characteristics: linear Shaft diameter: 16mm Leads: solder lugs Track material: plastic Mechanical rotation angle: 300° Electrical rotation angle: 270° Operating temperature: -40...85°C IP rating: IP67 Mechanical durability: 50000 cycles Temperature coefficient: 500ppm/°C Body material: plastic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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P6KE30A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 30V; 14.5A; unidirectional; DO15; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Technology: TransZorb® Manufacturer series: P6KE Features of semiconductor devices: glass passivated |
на замовлення 1488 шт: термін постачання 21-30 дні (днів) |
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1.5KE47CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 40.2V Breakdown voltage: 47.05V Max. forward impulse current: 23.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 729 шт: термін постачання 21-30 дні (днів) |
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| SIHA25N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB25N50E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF840ALPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF840APBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 141.30 грн |
| IRF840ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 371 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.73 грн |
| 50+ | 78.73 грн |
| 100+ | 75.45 грн |
| 250+ | 69.70 грн |
| IRF840ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF840LCPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 703 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 145.72 грн |
| 10+ | 88.57 грн |
| 25+ | 78.73 грн |
| 50+ | 72.99 грн |
| 100+ | 68.06 грн |
| 250+ | 63.14 грн |
| 500+ | 61.50 грн |
| IRF840SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 99.79 грн |
| 6+ | 80.37 грн |
| 10+ | 73.81 грн |
| 50+ | 60.68 грн |
| 100+ | 57.40 грн |
| IRF840STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BAS40-05-E3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Reverse recovery time: 5ns
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
на замовлення 1831 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.48 грн |
| 57+ | 7.30 грн |
| 100+ | 4.17 грн |
| 500+ | 3.03 грн |
| 1000+ | 2.71 грн |
| 1.5KE27CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 1183 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.44 грн |
| 16+ | 25.91 грн |
| 100+ | 21.73 грн |
| 500+ | 19.76 грн |
| 1N5822-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Quantity in set/package: 1400pcs.
на замовлення 2520 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.08 грн |
| 29+ | 14.19 грн |
| 100+ | 11.73 грн |
| 500+ | 10.00 грн |
| 1000+ | 9.84 грн |
| BYV26C-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
на замовлення 1385 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.33 грн |
| 15+ | 27.88 грн |
| 20+ | 25.50 грн |
| 100+ | 20.34 грн |
| 200+ | 18.45 грн |
| 500+ | 16.32 грн |
| 1000+ | 14.93 грн |
| BYV26C-TR | ![]() |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 10 inch reel; Ifsm: 30A; SOD57
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: 10 inch reel
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Quantity in set/package: 5000pcs.
на замовлення 1059 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.26 грн |
| 21+ | 20.17 грн |
| 25+ | 18.62 грн |
| 100+ | 16.73 грн |
| 250+ | 15.66 грн |
| 500+ | 15.50 грн |
| BZX85C27-TAP |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 27V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 11354 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.36 грн |
| 46+ | 9.02 грн |
| 54+ | 7.63 грн |
| 82+ | 5.04 грн |
| 100+ | 4.25 грн |
| 250+ | 3.51 грн |
| 500+ | 3.13 грн |
| 1000+ | 2.99 грн |
| 1.5KE400A-E3/54 |
![]() |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1463 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.26 грн |
| 18+ | 24.11 грн |
| 100+ | 21.32 грн |
| 250+ | 19.76 грн |
| 500+ | 18.78 грн |
| IRF740APBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
на замовлення 61 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.43 грн |
| 10+ | 108.25 грн |
| 50+ | 80.37 грн |
| IRF740ASPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| IRF740LCPBF | ![]() |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Kind of package: tube
на замовлення 513 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 132.47 грн |
| 10+ | 105.79 грн |
| 25+ | 89.39 грн |
| 50+ | 74.63 грн |
| 100+ | 63.14 грн |
| 500+ | 59.04 грн |
| IRF740PBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
на замовлення 745 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.61 грн |
| 10+ | 76.27 грн |
| 40+ | 68.88 грн |
| 50+ | 68.06 грн |
| 100+ | 63.14 грн |
| 150+ | 61.50 грн |
| 200+ | 59.86 грн |
| 250+ | 58.22 грн |
| 500+ | 54.12 грн |
| IRF740SPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: tube
на замовлення 543 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 125.41 грн |
| 10+ | 96.77 грн |
| 50+ | 89.39 грн |
| 250+ | 82.83 грн |
| IRF740STRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 63nC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE18CA-E3/54 |
![]() |
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 498 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.21 грн |
| 14+ | 30.18 грн |
| 25+ | 28.05 грн |
| 50+ | 26.24 грн |
| 100+ | 24.44 грн |
| 1.5KE180A-E3/54 |
![]() |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1530 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.86 грн |
| 14+ | 29.93 грн |
| 100+ | 23.04 грн |
| 250+ | 20.91 грн |
| 500+ | 19.68 грн |
| 1400+ | 18.04 грн |
| 1.5KE180CA-E3/54 |
![]() |
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 1812 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.69 грн |
| 13+ | 33.54 грн |
| 100+ | 26.65 грн |
| 500+ | 22.47 грн |
| 1000+ | 20.67 грн |
| 1400+ | 19.93 грн |
| 1.5KE18A-E3/54 |
![]() |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1328 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.33 грн |
| 15+ | 28.13 грн |
| 50+ | 23.45 грн |
| 100+ | 21.65 грн |
| 250+ | 19.44 грн |
| 500+ | 18.12 грн |
| 1000+ | 16.98 грн |
| P6KE200A-E3/54 |
![]() |
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Manufacturer series: P6KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| 1N4937-E3/54 |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Quantity in set/package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Quantity in set/package: 5500pcs.
на замовлення 2875 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.83 грн |
| 62+ | 6.64 грн |
| 68+ | 6.04 грн |
| 100+ | 5.18 грн |
| 500+ | 4.24 грн |
| 1000+ | 3.85 грн |
| 2000+ | 3.47 грн |
| 2500+ | 3.35 грн |
| 1N4937-E3/73 |
![]() |
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
на замовлення 2758 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.60 грн |
| 63+ | 6.56 грн |
| 100+ | 5.20 грн |
| 500+ | 4.35 грн |
| 1000+ | 4.02 грн |
| SB160-E3/54 |
![]() |
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.65V
Max. forward impulse current: 50A
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.65V
Max. forward impulse current: 50A
Kind of package: 13 inch reel
на замовлення 6562 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.36 грн |
| 43+ | 9.59 грн |
| 47+ | 8.77 грн |
| 100+ | 7.63 грн |
| 500+ | 6.23 грн |
| 1000+ | 5.58 грн |
| 2500+ | 5.41 грн |
| IRLL110TRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 519 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.99 грн |
| 50+ | 42.23 грн |
| 100+ | 39.53 грн |
| 250+ | 35.59 грн |
| 500+ | 32.47 грн |
| BZX55C3V6-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 7561 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.83 грн |
| 68+ | 6.07 грн |
| 85+ | 4.84 грн |
| 148+ | 2.79 грн |
| 1000+ | 1.76 грн |
| BZX85C3V6-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 3.6V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 8.12 грн |
| 120+ | 3.71 грн |
| 250+ | 3.31 грн |
| 1000+ | 2.99 грн |
| 1N5401-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Quantity in set/package: 1400pcs.
Capacitance: 30pF
Leakage current: 0.5mA
на замовлення 1260 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.55 грн |
| 27+ | 15.58 грн |
| 29+ | 14.27 грн |
| 50+ | 13.28 грн |
| 100+ | 12.30 грн |
| 500+ | 9.92 грн |
| 1000+ | 8.86 грн |
| 1N5404-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Quantity in set/package: 1400pcs.
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Capacitance: 30pF
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: 13 inch reel
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; 13 inch reel; Ifsm: 200A; DO201AD
Quantity in set/package: 1400pcs.
Leakage current: 0.5mA
Max. forward voltage: 1.2V
Load current: 3A
Max. forward impulse current: 200A
Max. off-state voltage: 0.4kV
Capacitance: 30pF
Case: DO201AD
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: 13 inch reel
на замовлення 2690 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.66 грн |
| 27+ | 15.50 грн |
| 50+ | 13.37 грн |
| 100+ | 12.38 грн |
| 500+ | 10.00 грн |
| 1000+ | 8.86 грн |
| 1400+ | 8.36 грн |
| 1N5817-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
на замовлення 3080 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.66 грн |
| 29+ | 14.43 грн |
| 32+ | 13.20 грн |
| 100+ | 9.43 грн |
| 250+ | 8.12 грн |
| 500+ | 7.13 грн |
| 1000+ | 6.31 грн |
| 2000+ | 5.58 грн |
| 1N5817-E3/73 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
на замовлення 7515 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.66 грн |
| 36+ | 11.48 грн |
| 100+ | 9.18 грн |
| 500+ | 7.71 грн |
| 1000+ | 6.97 грн |
| 3000+ | 5.90 грн |
| 6000+ | 5.33 грн |
| 1N5819-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.66 грн |
| 31+ | 13.45 грн |
| 34+ | 12.30 грн |
| 100+ | 9.02 грн |
| 500+ | 6.81 грн |
| 1000+ | 5.90 грн |
| 2000+ | 5.08 грн |
| 2500+ | 4.92 грн |
| 1N5819-E3/73 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
на замовлення 1608 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.55 грн |
| 33+ | 12.71 грн |
| 100+ | 8.77 грн |
| 500+ | 6.97 грн |
| 1000+ | 6.31 грн |
| BAV99-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
на замовлення 2516 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.83 грн |
| 71+ | 5.82 грн |
| 79+ | 5.21 грн |
| 103+ | 4.00 грн |
| 500+ | 3.01 грн |
| 1000+ | 2.65 грн |
| BAV99-HE3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
на замовлення 10 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| SI7850DP-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Kind of package: reel; tape
Kind of channel: enhancement
Case: PowerPAK® SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 0.9W
Drain current: 6.2A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Polarisation: unipolar
на замовлення 2947 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 168.68 грн |
| 5+ | 127.11 грн |
| 10+ | 114.81 грн |
| 50+ | 88.57 грн |
| 100+ | 78.73 грн |
| 500+ | 59.04 грн |
| 1000+ | 52.48 грн |
| 1N4007GP-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
на замовлення 12367 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.08 грн |
| 50+ | 17.47 грн |
| 100+ | 15.91 грн |
| 250+ | 13.28 грн |
| 500+ | 11.15 грн |
| 1000+ | 8.94 грн |
| P6KE15CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: 13 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: 13 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
на замовлення 4023 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.49 грн |
| 22+ | 19.27 грн |
| 100+ | 15.34 грн |
| 500+ | 13.37 грн |
| 1000+ | 12.71 грн |
| IRF730PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 364 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.11 грн |
| 50+ | 41.17 грн |
| 357B0102MXB251S22 |
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Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Potentiometer features: without limiters
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Linearity tolerance: ±2%
Mechanical durability: 10000000 cycles
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Potentiometer features: without limiters
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Linearity tolerance: ±2%
Mechanical durability: 10000000 cycles
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2682.98 грн |
| 3+ | 2172.33 грн |
| 10+ | 1980.44 грн |
| 25+ | 1878.75 грн |
| 357B2102MAB251S22 |
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Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Linearity tolerance: ±2%
Electrical rotation angle: 340°
Mechanical durability: 10000000 cycles
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Linearity tolerance: ±2%
Electrical rotation angle: 340°
Mechanical durability: 10000000 cycles
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
на замовлення 26 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2544.32 грн |
| 3+ | 2084.59 грн |
| 10+ | 2044.40 грн |
| VJ1206A100KXAAC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 2450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 14.40 грн |
| 100+ | 9.02 грн |
| 1000+ | 6.31 грн |
| CRCW1206100KFKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
на замовлення 7627 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.18 грн |
| 162+ | 2.54 грн |
| 246+ | 1.67 грн |
| 300+ | 1.37 грн |
| 382+ | 1.07 грн |
| 500+ | 0.90 грн |
| 1000+ | 0.75 грн |
| 2500+ | 0.68 грн |
| CRCW1206100KFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 142499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.60 грн |
| 700+ | 0.67 грн |
| 1000+ | 0.52 грн |
| 5000+ | 0.23 грн |
| 15000+ | 0.22 грн |
| CRCW1206100KJNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
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В кошику
од. на суму грн.
| CRCW1206100KJNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; 200V; -55÷155°C
Tolerance: ±5%
Resistance: 100kΩ
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; 200V; -55÷155°C
Tolerance: ±5%
Resistance: 100kΩ
Operating temperature: -55...155°C
Power: 0.25W
Mounting: SMD
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Type of resistor: thick film
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 400+ | 1.40 грн |
| 700+ | 0.64 грн |
| 1000+ | 0.51 грн |
| SFH6156-3X001T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
на замовлення 599 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.56 грн |
| 19+ | 21.65 грн |
| 25+ | 16.48 грн |
| 50+ | 13.28 грн |
| 100+ | 11.48 грн |
| BAS85-GS08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 2500pcs.
Max. load current: 0.3A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 2500pcs.
Max. load current: 0.3A
на замовлення 23793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.01 грн |
| 60+ | 6.89 грн |
| 148+ | 2.78 грн |
| 500+ | 2.22 грн |
| 1000+ | 2.08 грн |
| 2500+ | 1.88 грн |
| 5000+ | 1.80 грн |
| 12500+ | 1.74 грн |
| BAS85-GS18 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 13 inch reel
Power dissipation: 0.2W
Quantity in set/package: 10000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 13 inch reel
Power dissipation: 0.2W
Quantity in set/package: 10000pcs.
на замовлення 11032 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.95 грн |
| 91+ | 4.51 грн |
| 120+ | 3.44 грн |
| 500+ | 2.95 грн |
| 1000+ | 2.79 грн |
| 2500+ | 2.61 грн |
| 10000+ | 2.39 грн |
| NTCLE100E3472JB0 |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 4.7kΩ
Operating temperature: -40...125°C
Power: 0.5W
Mounting: THT
Material constant B: 3977K
Type of sensor: NTC thermistor
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 4.7kΩ
Operating temperature: -40...125°C
Power: 0.5W
Mounting: THT
Material constant B: 3977K
Type of sensor: NTC thermistor
на замовлення 4046 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.14 грн |
| 18+ | 23.78 грн |
| 19+ | 21.90 грн |
| 25+ | 19.35 грн |
| 50+ | 17.63 грн |
| 100+ | 16.24 грн |
| 200+ | 15.25 грн |
| P16NP472MAB15 |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 1W; ±20%; linear; cermet
Resistance: 4.7kΩ
Power: 1W
Tolerance: ±20%
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: soldered
Operating temperature: -40...85°C
Panel cutout diameter: 10mm
Knob dimensions: Ø16x8mm
Electrical rotation angle: 270°
Leads: solder lugs
Track material: cermet
Potentiometer features: for industrial use; with knob
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 1W; ±20%; linear; cermet
Resistance: 4.7kΩ
Power: 1W
Tolerance: ±20%
Temperature coefficient: 150ppm/°C
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Mounting: soldered
Operating temperature: -40...85°C
Panel cutout diameter: 10mm
Knob dimensions: Ø16x8mm
Electrical rotation angle: 270°
Leads: solder lugs
Track material: cermet
Potentiometer features: for industrial use; with knob
на замовлення 738 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 822.20 грн |
| 5+ | 708.53 грн |
| 10+ | 666.71 грн |
| 20+ | 619.96 грн |
| 40+ | 575.68 грн |
| 60+ | 552.72 грн |
| 100+ | 532.22 грн |
| PA16NP472KAB15 |
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Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±10%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±10%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±10%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±10%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
товару немає в наявності
В кошику
од. на суму грн.
| P6KE30A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Technology: TransZorb®
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
на замовлення 1488 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.21 грн |
| 18+ | 23.70 грн |
| 100+ | 15.75 грн |
| 500+ | 12.30 грн |
| 1000+ | 11.23 грн |
| 1.5KE47CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 729 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.68 грн |
| 500+ | 26.16 грн |
| SIHA25N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHB25N50E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.


























