| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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IRFP9240PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.5A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Kind of channel: enhancement Gate charge: 44nC Kind of package: tube |
на замовлення 1586 шт: термін постачання 14-30 дні (днів) |
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NTCS0805E3103JHT | VISHAY |
Category: SMD measurement NTC thermistorsDescription: NTC thermistor; 10kΩ; SMD; 0805; 3940K; ±5%; 210mW; -40÷150°C Resistance: 10kΩ Case - inch: 0805 Power: 0.21W Tolerance: ±5% Type of sensor: NTC thermistor Mounting: SMD Operating temperature: -40...150°C Material constant B: 3940K |
на замовлення 3566 шт: термін постачання 14-30 дні (днів) |
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NTCS0805E3103JMT | VISHAY |
Category: SMD measurement NTC thermistorsDescription: NTC thermistor; 10kΩ; SMD; 0805; 3570K; ±5%; 210mW; -40÷150°C Resistance: 10kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.21W Tolerance: ±5% Type of sensor: NTC thermistor Mounting: SMD Operating temperature: -40...150°C Material constant B: 3570K |
на замовлення 1611 шт: термін постачання 14-30 дні (днів) |
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RCA060330K9FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 0603; 30.9kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 30.9kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||||||
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RCA060330K9FKEC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 0603; 30.9kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 30.9kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CRCW060330K9FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0603; 30.9kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 30.9kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Quantity in set/package: 5000pcs. Body dimensions: 1.55x0.85x0.45mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CRCW060330K9FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0603; 30.9kΩ; 125mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 30.9kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Quantity in set/package: 5000pcs. Conform to the norm: AEC-Q200 Body dimensions: 0.85x1.55x0.45mm Roll diameter max.: 180mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ33CA-E3/61 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Kind of package: 7 inch reel; tape Manufacturer series: SMAJ Leakage current: 1µA Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 2423 шт: термін постачання 14-30 дні (днів) |
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SMAJ33CAHE3_A/H | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Kind of package: 7 inch reel; tape Manufacturer series: SMAJ Leakage current: 1µA Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||||
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WSLP1206R0200FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: metal strip; current shunt,sensing; SMD; 1206; 20mΩ; 1W Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 20mΩ Power: 1W Tolerance: ±1% Manufacturer series: WSLP1206 Operating temperature: -65...170°C |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
| WSR2R0500FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: metal strip; SMD; 4527; 50mΩ; 2W; ±1%; 11.56x6.98x2.41mm Type of resistor: metal strip Mounting: SMD Case - inch: 4527 Resistance: 50mΩ Power: 2W Tolerance: ±1% Body dimensions: 11.56x6.98x2.41mm Operating temperature: -65...275°C Temperature coefficient: 75ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 330mm Quantity in set/package: 1500pcs. |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
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WSR2R5000FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: metal strip; SMD; 4527; 500mΩ; 2W; ±1%; 11.56x6.98x2.41mm Type of resistor: metal strip Mounting: SMD Case - inch: 4527 Resistance: 0.5Ω Power: 2W Tolerance: ±1% Body dimensions: 11.56x6.98x2.41mm Operating temperature: -65...275°C Temperature coefficient: 75ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 330mm Quantity in set/package: 1500pcs. |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||||
| WSR2R1000FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 4527; 100mΩ; 2W; ±1%; -65÷275°C; 75ppm/°C Type of resistor: thick film Mounting: SMD Case - inch: 4527 Resistance: 0.1Ω Power: 2W Tolerance: ±1% Operating temperature: -65...275°C Temperature coefficient: 75ppm/°C Conform to the norm: AEC-Q200 Case - mm: 11470 |
на замовлення 4500 шт: термін постачання 14-30 дні (днів) |
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BYV27-200-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.35V Reverse recovery time: 25ns Max. load current: 15A Kind of package: Ammo Pack Leakage current: 0.15mA |
на замовлення 7068 шт: термін постачання 14-30 дні (днів) |
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| BYV27-200-TR | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; SOD57; Ufmax: 1.1V; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Max. forward impulse current: 50A Case: SOD57 Max. forward voltage: 1.1V Reverse recovery time: 25ns |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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| SIHG80N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 268A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 30mΩ Mounting: THT Gate charge: 443nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG80N60EF-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 254A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 254A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 32mΩ Mounting: THT Gate charge: 400nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG080N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 96A Power dissipation: 227W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHH080N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 96A Power dissipation: 184W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SIHA180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 44A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHB180N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SIHD180N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 40A Power dissipation: 156W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SIHG180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHH180N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 114W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SIHP180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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293D336X9016D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 33µF Operating voltage: 16V DC Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case: D Case - inch: 2917 Case - mm: 7343 |
на замовлення 2870 шт: термін постачання 14-30 дні (днів) |
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1N5404-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO201AD; 13 inch reel Max. off-state voltage: 0.4kV Load current: 3A Kind of package: 13 inch reel Semiconductor structure: single diode Leakage current: 0.5mA Case: DO201AD Capacitance: 30pF Type of diode: rectifying Mounting: THT Max. forward impulse current: 200A Manufacturer standard package: 1400pcs. Max. forward voltage: 1.2V |
на замовлення 2184 шт: термін постачання 14-30 дні (днів) |
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DG212BDY-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: analog switch; SPST-NO; Ch: 4; SO16; 4.5÷22V,4.5÷25V; tube Supply voltage: 4.5...22V; 4.5...25V Type of integrated circuit: analog switch Resistance: 85Ω Kind of package: tube Output configuration: SPST-NO Case: SO16 Number of channels: 4 Mounting: SMD |
на замовлення 540 шт: термін постачання 14-30 дні (днів) |
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DG212BDQ-T1-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 4.5÷22V,4.5÷25V Supply voltage: 4.5...22V; 4.5...25V Type of integrated circuit: analog switch Resistance: 85Ω Kind of package: reel; tape Output configuration: SPST-NO Case: TSSOP16 Number of channels: 4 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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DG212BDY-T1-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: analog switch; SPST-NO; Ch: 4; SO16; 7÷22V,13÷36V; reel,tape Supply voltage: 7...22V; 13...36V Type of integrated circuit: analog switch Resistance: 85Ω Kind of package: reel; tape Output configuration: SPST-NO Case: SO16 Number of channels: 4 Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| MAL209327681E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 680uF; 450VDC; Ø35x50mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 680µF Operating voltage: 450V DC Body dimensions: Ø35x50mm Tolerance: ±20% Service life: 2000h Operating temperature: -25...85°C Height: 50mm Diameter: 35mm Terminal pitch: 10mm |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||||||||
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TS53YL102MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear Resistance: 1kΩ Power: 0.25W Tolerance: ±20% Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C Type of potentiometer: mounting Track material: cermet Leads: YL Mechanical rotation angle: 270 ±10° Characteristics: linear Kind of potentiometer: single turn Temperature coefficient: 100ppm/°C Torque: 1.5Ncm Operating voltage: 200V IP rating: IP67 Mounting: SMD Electrical rotation angle: 220 ±15° |
на замовлення 155 шт: термін постачання 14-30 дні (днів) |
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TS53YL502MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 5kΩ; 250mW; SMD; ±20%; linear Resistance: 5kΩ Mounting: SMD Operating temperature: -55...155°C Tolerance: ±20% Electrical rotation angle: 220 ±15° Type of potentiometer: mounting Track material: cermet Leads: YL Mechanical rotation angle: 270 ±10° Characteristics: linear Body dimensions: 5x5x2.7mm Kind of potentiometer: single turn Power: 0.25W Temperature coefficient: 100ppm/°C Torque: 1.5Ncm Operating voltage: 200V IP rating: IP67 |
на замовлення 1851 шт: термін постачання 14-30 дні (днів) |
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IRF644SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: tube Kind of channel: enhancement |
на замовлення 354 шт: термін постачання 14-30 дні (днів) |
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IRF644PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhancement |
на замовлення 629 шт: термін постачання 14-30 дні (днів) |
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IRF644STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRF644STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 8.5A Pulsed drain current: 56A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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CRCW060351R0FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 51Ω; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 51Ω Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Mounting: SMD |
на замовлення 9800 шт: термін постачання 14-30 дні (днів) |
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MCT06030C7509FP50S | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 75Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V Resistance: 75Ω Tolerance: ±1% Power: 0.125W Mounting: SMD Operating voltage: 75V Temperature coefficient: 50ppm/°C Case - inch: 0603 Operating temperature: -55...155°C Type of resistor: thin film Manufacturer series: MCT0603 Version: 0 Roll diameter max.: 180mm Case - mm: 1608 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CRCW06035K10FKEAHP | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 5.1kΩ; SMD; 0603; 330mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 5.1kΩ Case - inch: 0603 Case - mm: 1608 Power: 0.33W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Mounting: SMD Body dimensions: 1.6x0.85x0.45mm Operating temperature: -55...155°C |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CRCW12065K10FKEAHP | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 5.1kΩ; 750mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 5.1kΩ Power: 0.75W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Quantity in set/package: 5000pcs. Conform to the norm: AEC-Q200 Body dimensions: 3.2x1.6x0.6mm Roll diameter max.: 180mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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CRCW060330K0FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 30kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V Resistance: 30kΩ Mounting: SMD Operating temperature: -55...155°C Tolerance: ±1% Power: 0.1W Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Type of resistor: thick film Manufacturer series: CRCW0603 |
на замовлення 10298 шт: термін постачання 14-30 дні (днів) |
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MCT06030D3002DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 30kΩ; 0.125W; ±0.5%; MCT0603; 0; 75V Resistance: 30kΩ Mounting: SMD Operating temperature: -55...155°C Tolerance: ±0.5% Type of resistor: thin film Case - inch: 0603 Power: 0.125W Roll diameter max.: 180mm Temperature coefficient: 25ppm/°C Operating voltage: 75V Manufacturer series: MCT0603 Version: 0 Case - mm: 1608 |
на замовлення 9500 шт: термін постачання 14-30 дні (днів) |
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CRCW0603330KFKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0603; 330kΩ; 0.1W; ±1%; 75V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 0.33MΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 41600 шт: термін постачання 14-30 дні (днів) |
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CRCW0201330KFKTDBC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0201; 330kΩ; 50mW; ±1%; 30V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0201 Case - mm: 0603 Resistance: 0.33MΩ Power: 50mW Tolerance: ±1% Operating voltage: 30V Operating temperature: -55...155°C |
на замовлення 4400 шт: термін постачання 14-30 дні (днів) |
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CRCW060330K0FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0603; 30kΩ; 0.1W; ±1%; 75V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 30kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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GRC00PK4721J00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 4700uF; 63VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7mF Operating voltage: 63V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 25x40mm |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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SI4825DDY-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -14.9A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -14.9A Pulsed drain current: -60A Power dissipation: 5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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AC05000001000JAC00 | VISHAY |
Category: Power resistorsDescription: Resistor: wire-wound; 100Ω; THT; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm Resistance: 100Ω Power: 5W Tolerance: ±5% Leads: axial Body dimensions: Ø7.5x18mm Conform to the norm: AEC-Q200 Diameter: 7.5mm Type of resistor: wire-wound Mounting: THT Length: 18mm |
на замовлення 352 шт: термін постачання 14-30 дні (днів) |
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SM6T6V8A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1mA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated |
на замовлення 6269 шт: термін постачання 14-30 дні (днів) |
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SM6T6V8A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1mA Kind of package: 13 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRFI9540GPBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -7.6A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 61nC Kind of channel: enhancement Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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VJ0603A220JXACW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; MLCC; 22pF; 50V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 22pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C Kind of capacitor: MLCC |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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BAT42-TAP | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.65V; 200mW Type of diode: Schottky switching Case: DO35 Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.65V Max. load current: 0.5A Max. forward impulse current: 4A Kind of package: Ammo Pack Power dissipation: 0.2W Features of semiconductor devices: small signal |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BAT42W-E3-18 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 300mA; 5ns; 230mW Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 4A Reverse recovery time: 5ns Power dissipation: 0.23W Leakage current: 0.5µA Capacitance: 7pF |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
| BAT42-TR | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; DO35; 30V; 200mA; 5ns; 200mW Type of diode: Schottky switching Case: DO35 Max. off-state voltage: 30V Load current: 0.2A Max. forward voltage: 0.65V Max. forward impulse current: 4A Reverse recovery time: 5ns Power dissipation: 0.2W Leakage current: 0.5µA |
на замовлення 20000 шт: термін постачання 14-30 дні (днів) |
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GRC00DD3311HTNL | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 330uF; 50VDC; Pitch: 5mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 330µF Operating voltage: 50V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Terminal pitch: 5mm Dimensions: 10x16mm |
на замовлення 519 шт: термін постачання 14-30 дні (днів) |
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MAL214097112E3 | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 330uF; 50VDC; 12.5x12.5x16mm; ±20% Mounting: SMD Type of capacitor: electrolytic Operating temperature: -55...125°C Capacitance: 330µF Body dimensions: 12.5x12.5x16mm Tolerance: ±20% Operating voltage: 50V DC |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRFR110TRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Mounting: SMD Polarisation: unipolar Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Drain-source voltage: 100V Pulsed drain current: 17A Drain current: 2.7A Gate charge: 8.3nC Power dissipation: 25W On-state resistance: 0.54Ω Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRFR110TRLPBF-BE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W Mounting: SMD Polarisation: unipolar Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Drain-source voltage: 100V Pulsed drain current: 17A Drain current: 2.7A Gate charge: 8.3nC Power dissipation: 25W On-state resistance: 0.54Ω Gate-source voltage: ±20V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| IRFP9240PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 44nC
Kind of package: tube
на замовлення 1586 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 178.43 грн |
| 5+ | 139.74 грн |
| 10+ | 126.35 грн |
| 25+ | 111.29 грн |
| 50+ | 101.25 грн |
| 100+ | 95.39 грн |
| 125+ | 92.88 грн |
| 250+ | 89.54 грн |
| 500+ | 87.03 грн |
| NTCS0805E3103JHT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0805; 3940K; ±5%; 210mW; -40÷150°C
Resistance: 10kΩ
Case - inch: 0805
Power: 0.21W
Tolerance: ±5%
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Material constant B: 3940K
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0805; 3940K; ±5%; 210mW; -40÷150°C
Resistance: 10kΩ
Case - inch: 0805
Power: 0.21W
Tolerance: ±5%
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Material constant B: 3940K
на замовлення 3566 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.63 грн |
| 25+ | 18.16 грн |
| 100+ | 16.40 грн |
| 500+ | 13.97 грн |
| 1000+ | 13.14 грн |
| NTCS0805E3103JMT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0805; 3570K; ±5%; 210mW; -40÷150°C
Resistance: 10kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.21W
Tolerance: ±5%
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Material constant B: 3570K
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0805; 3570K; ±5%; 210mW; -40÷150°C
Resistance: 10kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.21W
Tolerance: ±5%
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Material constant B: 3570K
на замовлення 1611 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.53 грн |
| 30+ | 14.23 грн |
| 31+ | 13.89 грн |
| RCA060330K9FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 30.9kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 30.9kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 30.9kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 30.9kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| RCA060330K9FKEC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 30.9kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 30.9kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 30.9kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 30.9kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| CRCW060330K9FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 30.9kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 30.9kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Body dimensions: 1.55x0.85x0.45mm
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 30.9kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 30.9kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Body dimensions: 1.55x0.85x0.45mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CRCW060330K9FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 30.9kΩ; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 30.9kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 0.85x1.55x0.45mm
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 30.9kΩ; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 30.9kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 0.85x1.55x0.45mm
Roll diameter max.: 180mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SMAJ33CA-E3/61 |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Leakage current: 1µA
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Leakage current: 1µA
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 2423 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.73 грн |
| 47+ | 9.04 грн |
| 50+ | 8.37 грн |
| 100+ | 7.36 грн |
| 500+ | 6.86 грн |
| 1000+ | 6.44 грн |
| 1800+ | 6.02 грн |
| SMAJ33CAHE3_A/H |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Leakage current: 1µA
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.7÷40.6V; 7.5A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Leakage current: 1µA
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| WSLP1206R0200FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 1206; 20mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 20mΩ
Power: 1W
Tolerance: ±1%
Manufacturer series: WSLP1206
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 1206; 20mΩ; 1W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 20mΩ
Power: 1W
Tolerance: ±1%
Manufacturer series: WSLP1206
Operating temperature: -65...170°C
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| WSR2R0500FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; SMD; 4527; 50mΩ; 2W; ±1%; 11.56x6.98x2.41mm
Type of resistor: metal strip
Mounting: SMD
Case - inch: 4527
Resistance: 50mΩ
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x6.98x2.41mm
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 330mm
Quantity in set/package: 1500pcs.
Category: SMD resistors
Description: Resistor: metal strip; SMD; 4527; 50mΩ; 2W; ±1%; 11.56x6.98x2.41mm
Type of resistor: metal strip
Mounting: SMD
Case - inch: 4527
Resistance: 50mΩ
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x6.98x2.41mm
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 330mm
Quantity in set/package: 1500pcs.
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
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| WSR2R5000FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; SMD; 4527; 500mΩ; 2W; ±1%; 11.56x6.98x2.41mm
Type of resistor: metal strip
Mounting: SMD
Case - inch: 4527
Resistance: 0.5Ω
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x6.98x2.41mm
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 330mm
Quantity in set/package: 1500pcs.
Category: SMD resistors
Description: Resistor: metal strip; SMD; 4527; 500mΩ; 2W; ±1%; 11.56x6.98x2.41mm
Type of resistor: metal strip
Mounting: SMD
Case - inch: 4527
Resistance: 0.5Ω
Power: 2W
Tolerance: ±1%
Body dimensions: 11.56x6.98x2.41mm
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 330mm
Quantity in set/package: 1500pcs.
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Мінімальне замовлення: 1500 шт
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| WSR2R1000FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 4527; 100mΩ; 2W; ±1%; -65÷275°C; 75ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 4527
Resistance: 0.1Ω
Power: 2W
Tolerance: ±1%
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Conform to the norm: AEC-Q200
Case - mm: 11470
Category: SMD resistors
Description: Resistor: thick film; SMD; 4527; 100mΩ; 2W; ±1%; -65÷275°C; 75ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 4527
Resistance: 0.1Ω
Power: 2W
Tolerance: ±1%
Operating temperature: -65...275°C
Temperature coefficient: 75ppm/°C
Conform to the norm: AEC-Q200
Case - mm: 11470
на замовлення 4500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 32.08 грн |
| BYV27-200-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.35V
Reverse recovery time: 25ns
Max. load current: 15A
Kind of package: Ammo Pack
Leakage current: 0.15mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.35V
Reverse recovery time: 25ns
Max. load current: 15A
Kind of package: Ammo Pack
Leakage current: 0.15mA
на замовлення 7068 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 56.77 грн |
| 10+ | 43.09 грн |
| 100+ | 40.08 грн |
| 250+ | 38.49 грн |
| 500+ | 35.23 грн |
| 1000+ | 32.38 грн |
| 2500+ | 29.20 грн |
| 5000+ | 28.95 грн |
| BYV27-200-TR |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; SOD57; Ufmax: 1.1V; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.1V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 50A; SOD57; Ufmax: 1.1V; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Max. forward impulse current: 50A
Case: SOD57
Max. forward voltage: 1.1V
Reverse recovery time: 25ns
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 32.35 грн |
| SIHG80N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 443nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 443nC
Kind of package: tube
Kind of channel: enhancement
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| SIHG80N60EF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 254A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 254A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 254A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 254A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Kind of channel: enhancement
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| SIHG080N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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| SIHH080N60E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHA180N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| SIHB180N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHD180N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHG180N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| SIHH180N60E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHP180N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| 293D336X9016D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 33µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: D
Case - inch: 2917
Case - mm: 7343
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 33µF
Operating voltage: 16V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case: D
Case - inch: 2917
Case - mm: 7343
на замовлення 2870 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.74 грн |
| 21+ | 20.58 грн |
| 25+ | 18.41 грн |
| 50+ | 16.82 грн |
| 100+ | 15.40 грн |
| 200+ | 13.89 грн |
| 250+ | 13.39 грн |
| 500+ | 11.21 грн |
| 1000+ | 10.96 грн |
| 1N5404-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO201AD; 13 inch reel
Max. off-state voltage: 0.4kV
Load current: 3A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 0.5mA
Case: DO201AD
Capacitance: 30pF
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Manufacturer standard package: 1400pcs.
Max. forward voltage: 1.2V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO201AD; 13 inch reel
Max. off-state voltage: 0.4kV
Load current: 3A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 0.5mA
Case: DO201AD
Capacitance: 30pF
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Manufacturer standard package: 1400pcs.
Max. forward voltage: 1.2V
на замовлення 2184 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.83 грн |
| 26+ | 16.32 грн |
| 28+ | 15.40 грн |
| 50+ | 14.64 грн |
| 100+ | 13.97 грн |
| 500+ | 11.30 грн |
| 1400+ | 9.62 грн |
| DG212BDY-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 4.5÷22V,4.5÷25V; tube
Supply voltage: 4.5...22V; 4.5...25V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: tube
Output configuration: SPST-NO
Case: SO16
Number of channels: 4
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 4.5÷22V,4.5÷25V; tube
Supply voltage: 4.5...22V; 4.5...25V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: tube
Output configuration: SPST-NO
Case: SO16
Number of channels: 4
Mounting: SMD
на замовлення 540 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 104.53 грн |
| 10+ | 76.98 грн |
| 25+ | 71.13 грн |
| 50+ | 66.11 грн |
| 100+ | 62.76 грн |
| 250+ | 57.74 грн |
| 500+ | 55.23 грн |
| DG212BDQ-T1-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 4.5÷22V,4.5÷25V
Supply voltage: 4.5...22V; 4.5...25V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: reel; tape
Output configuration: SPST-NO
Case: TSSOP16
Number of channels: 4
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; TSSOP16; 4.5÷22V,4.5÷25V
Supply voltage: 4.5...22V; 4.5...25V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: reel; tape
Output configuration: SPST-NO
Case: TSSOP16
Number of channels: 4
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| DG212BDY-T1-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 7÷22V,13÷36V; reel,tape
Supply voltage: 7...22V; 13...36V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: reel; tape
Output configuration: SPST-NO
Case: SO16
Number of channels: 4
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; SO16; 7÷22V,13÷36V; reel,tape
Supply voltage: 7...22V; 13...36V
Type of integrated circuit: analog switch
Resistance: 85Ω
Kind of package: reel; tape
Output configuration: SPST-NO
Case: SO16
Number of channels: 4
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| MAL209327681E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 450VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 450V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -25...85°C
Height: 50mm
Diameter: 35mm
Terminal pitch: 10mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 450VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 450V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -25...85°C
Height: 50mm
Diameter: 35mm
Terminal pitch: 10mm
товару немає в наявності
Мінімальне замовлення: 300 шт
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| TS53YL102MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Track material: cermet
Leads: YL
Mechanical rotation angle: 270 ±10°
Characteristics: linear
Kind of potentiometer: single turn
Temperature coefficient: 100ppm/°C
Torque: 1.5Ncm
Operating voltage: 200V
IP rating: IP67
Mounting: SMD
Electrical rotation angle: 220 ±15°
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 1kΩ; 250mW; SMD; ±20%; linear
Resistance: 1kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Type of potentiometer: mounting
Track material: cermet
Leads: YL
Mechanical rotation angle: 270 ±10°
Characteristics: linear
Kind of potentiometer: single turn
Temperature coefficient: 100ppm/°C
Torque: 1.5Ncm
Operating voltage: 200V
IP rating: IP67
Mounting: SMD
Electrical rotation angle: 220 ±15°
на замовлення 155 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 226.19 грн |
| 10+ | 147.27 грн |
| 50+ | 130.54 грн |
| 100+ | 125.52 грн |
| TS53YL502MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 5kΩ; 250mW; SMD; ±20%; linear
Resistance: 5kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±20%
Electrical rotation angle: 220 ±15°
Type of potentiometer: mounting
Track material: cermet
Leads: YL
Mechanical rotation angle: 270 ±10°
Characteristics: linear
Body dimensions: 5x5x2.7mm
Kind of potentiometer: single turn
Power: 0.25W
Temperature coefficient: 100ppm/°C
Torque: 1.5Ncm
Operating voltage: 200V
IP rating: IP67
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 5kΩ; 250mW; SMD; ±20%; linear
Resistance: 5kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±20%
Electrical rotation angle: 220 ±15°
Type of potentiometer: mounting
Track material: cermet
Leads: YL
Mechanical rotation angle: 270 ±10°
Characteristics: linear
Body dimensions: 5x5x2.7mm
Kind of potentiometer: single turn
Power: 0.25W
Temperature coefficient: 100ppm/°C
Torque: 1.5Ncm
Operating voltage: 200V
IP rating: IP67
на замовлення 1851 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 140.58 грн |
| 10+ | 111.29 грн |
| 25+ | 106.27 грн |
| 50+ | 102.09 грн |
| 100+ | 98.74 грн |
| 250+ | 94.56 грн |
| IRF644SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 354 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.07 грн |
| 10+ | 161.50 грн |
| 50+ | 135.56 грн |
| 100+ | 127.19 грн |
| 250+ | 118.82 грн |
| IRF644PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 629 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 158.60 грн |
| 10+ | 89.54 грн |
| 50+ | 75.31 грн |
| 100+ | 70.29 грн |
| 250+ | 62.76 грн |
| 500+ | 58.57 грн |
| IRF644STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRF644STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 8.5A; Idm: 56A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 8.5A
Pulsed drain current: 56A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| CRCW060351R0FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 51Ω; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 51Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; 51Ω; SMD; 0603; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 51Ω
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 9800 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 301+ | 1.50 грн |
| 601+ | 0.70 грн |
| 1021+ | 0.41 грн |
| 5000+ | 0.32 грн |
| MCT06030C7509FP50S |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 75Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Resistance: 75Ω
Tolerance: ±1%
Power: 0.125W
Mounting: SMD
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Case - inch: 0603
Operating temperature: -55...155°C
Type of resistor: thin film
Manufacturer series: MCT0603
Version: 0
Roll diameter max.: 180mm
Case - mm: 1608
Category: SMD resistors
Description: Resistor: thin film; 75Ω; SMD; 0603; 0.125W; ±1%; MCT0603; 0; 75V
Resistance: 75Ω
Tolerance: ±1%
Power: 0.125W
Mounting: SMD
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Case - inch: 0603
Operating temperature: -55...155°C
Type of resistor: thin film
Manufacturer series: MCT0603
Version: 0
Roll diameter max.: 180mm
Case - mm: 1608
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CRCW06035K10FKEAHP |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; SMD; 0603; 330mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 5.1kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.33W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Mounting: SMD
Body dimensions: 1.6x0.85x0.45mm
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; SMD; 0603; 330mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 5.1kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.33W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Mounting: SMD
Body dimensions: 1.6x0.85x0.45mm
Operating temperature: -55...155°C
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CRCW12065K10FKEAHP |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 5.1kΩ; 750mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 5.1kΩ
Power: 0.75W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 3.2x1.6x0.6mm
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 5.1kΩ; 750mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 5.1kΩ
Power: 0.75W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Body dimensions: 3.2x1.6x0.6mm
Roll diameter max.: 180mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CRCW060330K0FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 30kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 0.1W
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Type of resistor: thick film
Manufacturer series: CRCW0603
Category: SMD resistors
Description: Resistor: thick film; 30kΩ; SMD; 0603; 0.1W; ±1%; CRCW0603; 75V
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±1%
Power: 0.1W
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Type of resistor: thick film
Manufacturer series: CRCW0603
на замовлення 10298 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 301+ | 1.50 грн |
| 601+ | 0.70 грн |
| 1021+ | 0.41 грн |
| 5000+ | 0.32 грн |
| MCT06030D3002DP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 30kΩ; 0.125W; ±0.5%; MCT0603; 0; 75V
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±0.5%
Type of resistor: thin film
Case - inch: 0603
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Manufacturer series: MCT0603
Version: 0
Case - mm: 1608
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 30kΩ; 0.125W; ±0.5%; MCT0603; 0; 75V
Resistance: 30kΩ
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±0.5%
Type of resistor: thin film
Case - inch: 0603
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 25ppm/°C
Operating voltage: 75V
Manufacturer series: MCT0603
Version: 0
Case - mm: 1608
на замовлення 9500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.62 грн |
| 135+ | 3.12 грн |
| 154+ | 2.73 грн |
| 163+ | 2.58 грн |
| 500+ | 2.23 грн |
| 1000+ | 2.09 грн |
| 5000+ | 1.80 грн |
| CRCW0603330KFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 330kΩ; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 0.33MΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 330kΩ; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 0.33MΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 41600 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 252+ | 1.80 грн |
| 500+ | 0.86 грн |
| 1000+ | 0.52 грн |
| 5000+ | 0.37 грн |
| CRCW0201330KFKTDBC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 330kΩ; 50mW; ±1%; 30V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 0.33MΩ
Power: 50mW
Tolerance: ±1%
Operating voltage: 30V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 330kΩ; 50mW; ±1%; 30V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Resistance: 0.33MΩ
Power: 50mW
Tolerance: ±1%
Operating voltage: 30V
Operating temperature: -55...155°C
на замовлення 4400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 600+ | 0.77 грн |
| 1000+ | 0.62 грн |
| CRCW060330K0FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 30kΩ; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 30kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 30kΩ; 0.1W; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 30kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| GRC00PK4721J00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 63VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 63V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 25x40mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4700uF; 63VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7mF
Operating voltage: 63V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 25x40mm
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 218.08 грн |
| 10+ | 153.97 грн |
| SI4825DDY-T1-GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -14.9A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.9A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -14.9A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.9A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| AC05000001000JAC00 |
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Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; 100Ω; THT; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Resistance: 100Ω
Power: 5W
Tolerance: ±5%
Leads: axial
Body dimensions: Ø7.5x18mm
Conform to the norm: AEC-Q200
Diameter: 7.5mm
Type of resistor: wire-wound
Mounting: THT
Length: 18mm
Category: Power resistors
Description: Resistor: wire-wound; 100Ω; THT; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Resistance: 100Ω
Power: 5W
Tolerance: ±5%
Leads: axial
Body dimensions: Ø7.5x18mm
Conform to the norm: AEC-Q200
Diameter: 7.5mm
Type of resistor: wire-wound
Mounting: THT
Length: 18mm
на замовлення 352 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.08 грн |
| 12+ | 36.40 грн |
| 25+ | 33.97 грн |
| 50+ | 32.30 грн |
| 100+ | 30.54 грн |
| 250+ | 28.37 грн |
| SM6T6V8A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
на замовлення 6269 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 13.52 грн |
| 41+ | 10.38 грн |
| 47+ | 8.95 грн |
| 100+ | 7.36 грн |
| 250+ | 6.69 грн |
| 500+ | 6.02 грн |
| 750+ | 5.61 грн |
| 1500+ | 4.94 грн |
| 2250+ | 4.60 грн |
| SM6T6V8A-E3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 3200 шт
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| IRFI9540GPBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -7.6A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -7.6A; 48W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -7.6A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of channel: enhancement
Kind of package: tube
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| VJ0603A220JXACW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 22pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Kind of capacitor: MLCC
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 22pF; 50V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 22pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Kind of capacitor: MLCC
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 11.71 грн |
| BAT42-TAP |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.65V; 200mW
Type of diode: Schottky switching
Case: DO35
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: Ammo Pack
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.65V; 200mW
Type of diode: Schottky switching
Case: DO35
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: Ammo Pack
Power dissipation: 0.2W
Features of semiconductor devices: small signal
товару немає в наявності
Мінімальне замовлення: 30000 шт
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| BAT42W-E3-18 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 300mA; 5ns; 230mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Reverse recovery time: 5ns
Power dissipation: 0.23W
Leakage current: 0.5µA
Capacitance: 7pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 300mA; 5ns; 230mW
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 4A
Reverse recovery time: 5ns
Power dissipation: 0.23W
Leakage current: 0.5µA
Capacitance: 7pF
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| BAT42-TR |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO35; 30V; 200mA; 5ns; 200mW
Type of diode: Schottky switching
Case: DO35
Max. off-state voltage: 30V
Load current: 0.2A
Max. forward voltage: 0.65V
Max. forward impulse current: 4A
Reverse recovery time: 5ns
Power dissipation: 0.2W
Leakage current: 0.5µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO35; 30V; 200mA; 5ns; 200mW
Type of diode: Schottky switching
Case: DO35
Max. off-state voltage: 30V
Load current: 0.2A
Max. forward voltage: 0.65V
Max. forward impulse current: 4A
Reverse recovery time: 5ns
Power dissipation: 0.2W
Leakage current: 0.5µA
на замовлення 20000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 4.14 грн |
| GRC00DD3311HTNL |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 50VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Terminal pitch: 5mm
Dimensions: 10x16mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 330uF; 50VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 330µF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Terminal pitch: 5mm
Dimensions: 10x16mm
на замовлення 519 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 65.33 грн |
| 21+ | 20.58 грн |
| 50+ | 13.72 грн |
| 100+ | 11.13 грн |
| 500+ | 9.46 грн |
| MAL214097112E3 |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 50VDC; 12.5x12.5x16mm; ±20%
Mounting: SMD
Type of capacitor: electrolytic
Operating temperature: -55...125°C
Capacitance: 330µF
Body dimensions: 12.5x12.5x16mm
Tolerance: ±20%
Operating voltage: 50V DC
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 50VDC; 12.5x12.5x16mm; ±20%
Mounting: SMD
Type of capacitor: electrolytic
Operating temperature: -55...125°C
Capacitance: 330µF
Body dimensions: 12.5x12.5x16mm
Tolerance: ±20%
Operating voltage: 50V DC
товару немає в наявності
Мінімальне замовлення: 200 шт
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| IRFR110TRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Mounting: SMD
Polarisation: unipolar
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Pulsed drain current: 17A
Drain current: 2.7A
Gate charge: 8.3nC
Power dissipation: 25W
On-state resistance: 0.54Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Mounting: SMD
Polarisation: unipolar
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Pulsed drain current: 17A
Drain current: 2.7A
Gate charge: 8.3nC
Power dissipation: 25W
On-state resistance: 0.54Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| IRFR110TRLPBF-BE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Mounting: SMD
Polarisation: unipolar
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Pulsed drain current: 17A
Drain current: 2.7A
Gate charge: 8.3nC
Power dissipation: 25W
On-state resistance: 0.54Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.7A; Idm: 17A; 25W
Mounting: SMD
Polarisation: unipolar
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Pulsed drain current: 17A
Drain current: 2.7A
Gate charge: 8.3nC
Power dissipation: 25W
On-state resistance: 0.54Ω
Gate-source voltage: ±20V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.


































