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VS-8EWF12S-M3 VS-8EWF12S-M3 VISHAY vs-8ewf12sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; Ir: 4mA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: tube
Quantity in set/package: 75pcs.
Leakage current: 4mA
Max. forward voltage: 1.3V
Max. forward impulse current: 150A
на замовлення 1056 шт:
термін постачання 21-30 дні (днів)
3+193.44 грн
10+154.91 грн
75+88.16 грн
150+85.69 грн
Мінімальне замовлення: 3
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VS-HFA08PB120-N3 VS-HFA08PB120-N3 VISHAY VS-HFA08PB120-N3.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 130A; TO247AC; 28ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 28ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Kind of package: tube
Max. forward voltage: 2.4V
Max. forward impulse current: 130A
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VS-HFA08TB120S-M3 VISHAY vs-hfa08tb120s-m3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 160ns; D2PAK,TO263AB; Ufmax: 3.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 160ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: tube
Quantity in set/package: 50pcs.
Capacitance: 20pF
Leakage current: 1mA
Max. forward voltage: 3.1V
Max. load current: 32A
Max. forward impulse current: 130A
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VS-8EWF12STR-M3 VISHAY vs-8ewf12sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 2000pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 2000pcs.
Max. forward voltage: 1.3V
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VS-E5TX0812-M3 VISHAY vs-e5tx0812-m3.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 60A; TO220AC; 87ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 87ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Max. forward voltage: 3.4V
Max. load current: 16A
Max. forward impulse current: 60A
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VS-8EWF12SLHM3 VISHAY vs-8ewf12slhm3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.3V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.3V
Application: automotive industry
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VS-8EWF12STRL-M3 VISHAY vs-8ewf12sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 3000pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.3V
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VS-8EWF12STRR-M3 VISHAY vs-8ewf12sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 3000pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.3V
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VS-8EWS12S-M3 VISHAY vs-8ews08sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: tube
Quantity in set/package: 75pcs.
Leakage current: 0.5mA
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
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VS-8EWS12SLHM3 VISHAY vs-8ews12shm3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
Application: automotive industry
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VS-8EWS12STR-M3 VISHAY vs-8ews08sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 2000pcs.
Max. forward voltage: 1.1V
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VS-8EWS12STRL-M3 VISHAY vs-8ews08sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
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VS-8EWS12STRR-M3 VISHAY vs-8ews08sm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
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VS-HFA08TB120SL-M3 VISHAY vs-hfa08tb120s-m3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK,TO263AB; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-HFA08TB120SR-M3 VISHAY vs-hfa08tb120s-m3.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 95ns; D2PAK,TO263AB; 800pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 95ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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MBRB20100CT-E3/4W VISHAY mbr20100.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
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VS-MBRB20100CT-M3 VISHAY vs-mbrb20ct-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
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VS-MBRB20100CTRHM3 VISHAY vs-mbrb20cthm3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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VS-MBRB20100CTHM3 VISHAY vs-mbrb20cthm3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
Application: automotive industry
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VS-MBRB20100CTL-M3 VISHAY vs-mbrb20ct-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-MBRB20100CTLHM3 VISHAY vs-mbrb20cthm3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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VS-MBRB20100CTR-M3 VISHAY vs-mbrb20ct-m3.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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AC05000001002JAC00 VISHAY ac_ac-at_ac-ni.pdf Category: Power resistors
Description: Resistor: wire-wound; THT; 10kΩ; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Resistance: 10kΩ
Mounting: THT
Type of resistor: wire-wound
Diameter: 7.5mm
Body dimensions: Ø7.5x18mm
Length: 18mm
Power: 5W
Tolerance: ±5%
Conform to the norm: AEC-Q200
Leads: axial
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BFC233990005 BFC233990005 VISHAY mkp339x2.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 0.047uF; 310V; 630VDC; 17.5x5x11mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 47nF
Operating voltage: 310V; 630V DC
Body dimensions: 17.5x5x11mm
Mounting: THT
Tolerance: ±20%
Terminal pitch: 15mm
Leads: 2pin
на замовлення 1163 шт:
термін постачання 21-30 дні (днів)
36+12.42 грн
Мінімальне замовлення: 36
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VJ0603Y222KXXCW1BC VISHAY Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 2.2nF; 25VDC; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 2.2nF
Operating voltage: 25V DC
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Body dimensions: 1.6x0.8mm
Operating temperature: -55...125°C
на замовлення 32000 шт:
термін постачання 21-30 дні (днів)
4000+0.46 грн
Мінімальне замовлення: 4000
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T12X0103MAB25 VISHAY 209.pdf Category: Single turn THT trimmers
Description: Potentiometer: mounting; 10kΩ; ±20%; cermet; 12x12x13mm; 50pcs.
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 12x12x13mm
Quantity in set/package: 50pcs.
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Resistance: 10kΩ
Track material: cermet
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T12X0105JAB25 VISHAY 209.pdf Category: Single turn THT trimmers
Description: Potentiometer: mounting; 1MΩ; ±5%; cermet; 12x12x13mm; 50pcs.
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 12x12x13mm
Quantity in set/package: 50pcs.
Tolerance: ±5%
Temperature coefficient: 100ppm/°C
Resistance: 1MΩ
Track material: cermet
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NTCS0805E3334JHT NTCS0805E3334JHT VISHAY ntcs0805e3t.pdf Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
на замовлення 114 шт:
термін постачання 21-30 дні (днів)
20+23.07 грн
30+14.01 грн
50+12.77 грн
100+12.19 грн
Мінімальне замовлення: 20
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CRCW08051K50FKEA VISHAY dcrcwe3.pdf Category: SMD resistors
Description: Resistor: thick film
Type of resistor: thick film
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CRCW08051K50FKEAHP VISHAY crcwhpe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.5kΩ; 500mW; ±1%; 0805; 2x1.25mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5kΩ
Power: 0.5W
Tolerance: ±1%
Manufacturer series: 0805
Max. operating voltage: 150V
Body dimensions: 2x1.25mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
5000+1.19 грн
Мінімальне замовлення: 5000
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RCA080522R0FKEA RCA080522R0FKEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0805; 22Ω; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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CRCW080522R0FKTCBC CRCW080522R0FKTCBC VISHAY Data+Sheet+CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 22Ω; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.45mm
Quantity in set/package: 20000pcs.
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MAL205752681E3 VISHAY 056057psmsi.pdf Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 200VDC; Ø30x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 200V DC
Body dimensions: Ø30x40mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 12000h
Operating temperature: -40...85°C
Height: 40mm
Diameter: 30mm
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MAL205352681E3 VISHAY 051053pe.pdf Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 200VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 200V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Service life: 12000h
Operating temperature: -40...85°C
Height: 50mm
Diameter: 35mm
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CRCW08059K10FKTABC CRCW08059K10FKTABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 9.1kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)
200+2.22 грн
500+1.09 грн
1000+0.67 грн
Мінімальне замовлення: 200
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RCA08059K10FKEA RCA08059K10FKEA VISHAY rcae3.pdf Category: SMD resistors
Description: Resistor: thick film; 0805; 9.1kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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CRCW08059K10FHEAP CRCW08059K10FHEAP VISHAY 56.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 9.1kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.5mm
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SMCJ33CA-E3/57T SMCJ33CA-E3/57T VISHAY smcjA-CA_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Tolerance: ±5%
на замовлення 1028 шт:
термін постачання 21-30 дні (днів)
13+34.61 грн
19+22.16 грн
100+17.39 грн
250+15.90 грн
500+14.83 грн
850+14.09 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SMCJ33CA-E3/9AT VISHAY smcj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel; tape
Tolerance: ±5%
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SMCJ33CA-E3/9AT VISHAY smcj.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7V; 28.1A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Operating temperature: -55...150°C
Application: universal
Number of channels: 1
на замовлення 7000 шт:
термін постачання 21-30 дні (днів)
3500+13.93 грн
Мінімальне замовлення: 3500
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VLMF3100-GS08 VISHAY vlmf310.pdf Category: SMD colour LEDs
Description: LED; orange; SMD; 3528,PLCC2; 28÷90mcd; 2÷2.6VDC; 3.5x2.8x1.75mm
Type of diode: LED
LED colour: orange
Mounting: SMD
Case: 3528; PLCC2
Luminosity: 28...90mcd
Operating voltage: 2...2.6V DC
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 120°
LED current: 10mA
Wavelength: 598...611nm
Front: flat
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SIHG22N60AE-GE3 VISHAY sihg22n60ae.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHA22N60AE-GE3 VISHAY siha22n60ae.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 49A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHA22N60EF-GE3 VISHAY tf-siha22n60ef-ge3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHB22N60AE-GE3 VISHAY sihb22n60ae.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 443nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60E-GE3 SIHB22N60E-GE3 VISHAY sihb22n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60EF-GE3 VISHAY tf-sihb22n60ef-ge3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60EL-GE3 VISHAY sihb22n60el.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 45A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60ET1-GE3 VISHAY sihb22n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60ET5-GE3 VISHAY sihb22n60e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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SiHP22N60AE-GE3 VISHAY sihp22n60ae.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHP22N60EF-GE3 VISHAY sihp22n60ef.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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IRFR310PBF IRFR310PBF VISHAY irfr310.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 374 шт:
термін постачання 21-30 дні (днів)
7+70.99 грн
75+32.38 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRFR310TRLPBF VISHAY sihfr310.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRFR310TRPBF VISHAY sihfr310.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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SI7615ADN-T1-GE3 SI7615ADN-T1-GE3 VISHAY si7615adn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 183nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2964 шт:
термін постачання 21-30 дні (днів)
9+55.02 грн
11+40.95 грн
50+31.97 грн
100+28.51 грн
500+26.78 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CMB02070X2101FB200 VISHAY Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 2.1kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 2.1kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Case: 0207 MELF
Operating temperature: -55...125°C
Diameter: 2.2mm
Body dimensions: Ø2.2x5.8mm
Length: 5.8mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Mounting: SMD
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CMB02070X2101FB700 VISHAY Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 2.1kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 2.1kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Case: 0207 MELF
Operating temperature: -55...125°C
Diameter: 2.2mm
Body dimensions: Ø2.2x5.8mm
Length: 5.8mm
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Mounting: SMD
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VS-KBPC608 VISHAY kbpc1.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.2V; If: 6A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.2V
Load current: 6A
Max. forward impulse current: 125A
Version: square
Case: D-72; KBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
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VS-KBPC608PBF VISHAY vs-kbpc1series.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.2V; If: 6A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.2V
Load current: 6A
Max. forward impulse current: 125A
Version: square
Case: D-72; KBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
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VS-8EWF12S-M3 vs-8ewf12sm.pdf
VS-8EWF12S-M3
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; Ir: 4mA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: tube
Quantity in set/package: 75pcs.
Leakage current: 4mA
Max. forward voltage: 1.3V
Max. forward impulse current: 150A
на замовлення 1056 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+193.44 грн
10+154.91 грн
75+88.16 грн
150+85.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VS-HFA08PB120-N3 VS-HFA08PB120-N3.pdf
VS-HFA08PB120-N3
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 130A; TO247AC; 28ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 28ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO247AC
Kind of package: tube
Max. forward voltage: 2.4V
Max. forward impulse current: 130A
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VS-HFA08TB120S-M3 vs-hfa08tb120s-m3.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 160ns; D2PAK,TO263AB; Ufmax: 3.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 160ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: tube
Quantity in set/package: 50pcs.
Capacitance: 20pF
Leakage current: 1mA
Max. forward voltage: 3.1V
Max. load current: 32A
Max. forward impulse current: 130A
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VS-8EWF12STR-M3 vs-8ewf12sm.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 2000pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 2000pcs.
Max. forward voltage: 1.3V
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VS-E5TX0812-M3 vs-e5tx0812-m3.pdf
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 60A; TO220AC; 87ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 87ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Max. forward voltage: 3.4V
Max. load current: 16A
Max. forward impulse current: 60A
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VS-8EWF12SLHM3 vs-8ewf12slhm3.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.3V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.3V
Application: automotive industry
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VS-8EWF12STRL-M3 vs-8ewf12sm.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 3000pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.3V
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VS-8EWF12STRR-M3 vs-8ewf12sm.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 270ns; DPAK; Ufmax: 1.3V; 3000pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 270ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.3V
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VS-8EWS12S-M3 vs-8ews08sm.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; Ifsm: 150A; tube
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: tube
Quantity in set/package: 75pcs.
Leakage current: 0.5mA
Max. forward voltage: 1.1V
Max. forward impulse current: 150A
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VS-8EWS12SLHM3 vs-8ews12shm3.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
Application: automotive industry
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VS-8EWS12STR-M3 vs-8ews08sm.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 2000pcs.
Max. forward voltage: 1.1V
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VS-8EWS12STRL-M3 vs-8ews08sm.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
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VS-8EWS12STRR-M3 vs-8ews08sm.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; DPAK; Ufmax: 1.1V; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: DPAK
Kind of package: 13 inch reel
Quantity in set/package: 3000pcs.
Max. forward voltage: 1.1V
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VS-HFA08TB120SL-M3 vs-hfa08tb120s-m3.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK,TO263AB; 13 inch reel
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-HFA08TB120SR-M3 vs-hfa08tb120s-m3.pdf
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 95ns; D2PAK,TO263AB; 800pcs.
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 95ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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MBRB20100CT-E3/4W mbr20100.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
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VS-MBRB20100CT-M3 vs-mbrb20ct-m3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
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VS-MBRB20100CTRHM3 vs-mbrb20cthm3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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VS-MBRB20100CTHM3 vs-mbrb20cthm3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: tube
Quantity in set/package: 50pcs.
Application: automotive industry
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VS-MBRB20100CTL-M3 vs-mbrb20ct-m3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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VS-MBRB20100CTLHM3 vs-mbrb20cthm3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Application: automotive industry
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VS-MBRB20100CTR-M3 vs-mbrb20ct-m3.pdf
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 20A; 800pcs.
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 20A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
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AC05000001002JAC00 ac_ac-at_ac-ni.pdf
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 10kΩ; 5W; ±5%; Ø7.5x18mm; axial; L: 18mm
Resistance: 10kΩ
Mounting: THT
Type of resistor: wire-wound
Diameter: 7.5mm
Body dimensions: Ø7.5x18mm
Length: 18mm
Power: 5W
Tolerance: ±5%
Conform to the norm: AEC-Q200
Leads: axial
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BFC233990005 mkp339x2.pdf
BFC233990005
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 0.047uF; 310V; 630VDC; 17.5x5x11mm
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 47nF
Operating voltage: 310V; 630V DC
Body dimensions: 17.5x5x11mm
Mounting: THT
Tolerance: ±20%
Terminal pitch: 15mm
Leads: 2pin
на замовлення 1163 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.42 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
VJ0603Y222KXXCW1BC
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 2.2nF; 25VDC; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 2.2nF
Operating voltage: 25V DC
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Body dimensions: 1.6x0.8mm
Operating temperature: -55...125°C
на замовлення 32000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4000+0.46 грн
Мінімальне замовлення: 4000
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T12X0103MAB25 209.pdf
Виробник: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; 10kΩ; ±20%; cermet; 12x12x13mm; 50pcs.
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 12x12x13mm
Quantity in set/package: 50pcs.
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Resistance: 10kΩ
Track material: cermet
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T12X0105JAB25 209.pdf
Виробник: VISHAY
Category: Single turn THT trimmers
Description: Potentiometer: mounting; 1MΩ; ±5%; cermet; 12x12x13mm; 50pcs.
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Body dimensions: 12x12x13mm
Quantity in set/package: 50pcs.
Tolerance: ±5%
Temperature coefficient: 100ppm/°C
Resistance: 1MΩ
Track material: cermet
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NTCS0805E3334JHT ntcs0805e3t.pdf
NTCS0805E3334JHT
Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 330kΩ; SMD; 0805; 3930K; ±5%; 210mW; -40÷150°C
Case - inch: 0805
Resistance: 0.33MΩ
Power: 0.21W
Tolerance: ±5%
Operating temperature: -40...150°C
Material constant B: 3930K
Type of sensor: NTC thermistor
Mounting: SMD
на замовлення 114 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+23.07 грн
30+14.01 грн
50+12.77 грн
100+12.19 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
CRCW08051K50FKEA dcrcwe3.pdf
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film
Type of resistor: thick film
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CRCW08051K50FKEAHP crcwhpe3.pdf
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.5kΩ; 500mW; ±1%; 0805; 2x1.25mm
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5kΩ
Power: 0.5W
Tolerance: ±1%
Manufacturer series: 0805
Max. operating voltage: 150V
Body dimensions: 2x1.25mm
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5000+1.19 грн
Мінімальне замовлення: 5000
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RCA080522R0FKEA rcae3.pdf
RCA080522R0FKEA
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 22Ω; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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CRCW080522R0FKTCBC Data+Sheet+CRCW_BCe3.pdf
CRCW080522R0FKTCBC
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 22Ω; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 22Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.45mm
Quantity in set/package: 20000pcs.
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MAL205752681E3 056057psmsi.pdf
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 200VDC; Ø30x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 200V DC
Body dimensions: Ø30x40mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 12000h
Operating temperature: -40...85°C
Height: 40mm
Diameter: 30mm
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MAL205352681E3 051053pe.pdf
Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 200VDC; Ø35x50mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 200V DC
Body dimensions: Ø35x50mm
Tolerance: ±20%
Service life: 12000h
Operating temperature: -40...85°C
Height: 50mm
Diameter: 35mm
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CRCW08059K10FKTABC Data Sheet CRCW_BCe3.pdf
CRCW08059K10FKTABC
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 9.1kΩ; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
200+2.22 грн
500+1.09 грн
1000+0.67 грн
Мінімальне замовлення: 200
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RCA08059K10FKEA rcae3.pdf
RCA08059K10FKEA
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 9.1kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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CRCW08059K10FHEAP 56.pdf
CRCW08059K10FHEAP
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 9.1kΩ; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 9.1kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Body dimensions: 2x1.25x0.5mm
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SMCJ33CA-E3/57T smcjA-CA_ser.pdf
SMCJ33CA-E3/57T
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Tolerance: ±5%
на замовлення 1028 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.61 грн
19+22.16 грн
100+17.39 грн
250+15.90 грн
500+14.83 грн
850+14.09 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SMCJ33CA-E3/9AT smcj.pdf
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel; tape
Tolerance: ±5%
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SMCJ33CA-E3/9AT smcj.pdf
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7V; 28.1A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Operating temperature: -55...150°C
Application: universal
Number of channels: 1
на замовлення 7000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3500+13.93 грн
Мінімальне замовлення: 3500
В кошику  од. на суму  грн.
VLMF3100-GS08 vlmf310.pdf
Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; orange; SMD; 3528,PLCC2; 28÷90mcd; 2÷2.6VDC; 3.5x2.8x1.75mm
Type of diode: LED
LED colour: orange
Mounting: SMD
Case: 3528; PLCC2
Luminosity: 28...90mcd
Operating voltage: 2...2.6V DC
Dimensions: 3.5x2.8x1.75mm
Viewing angle: 120°
LED current: 10mA
Wavelength: 598...611nm
Front: flat
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SIHG22N60AE-GE3 sihg22n60ae.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHA22N60AE-GE3 siha22n60ae.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 49A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHA22N60EF-GE3 tf-siha22n60ef-ge3.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHB22N60AE-GE3 sihb22n60ae.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 443nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60E-GE3 sihb22n60e.pdf
SIHB22N60E-GE3
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60EF-GE3 tf-sihb22n60ef-ge3.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60EL-GE3 sihb22n60el.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 45A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60ET1-GE3 sihb22n60e.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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SIHB22N60ET5-GE3 sihb22n60e.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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SiHP22N60AE-GE3 sihp22n60ae.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 49A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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SIHP22N60EF-GE3 sihp22n60ef.pdf
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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IRFR310PBF irfr310.pdf
IRFR310PBF
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 374 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+70.99 грн
75+32.38 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IRFR310TRLPBF sihfr310.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRFR310TRPBF description sihfr310.pdf
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.7A; Idm: 6A; 25W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.7A
Pulsed drain current: 6A
Power dissipation: 25W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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SI7615ADN-T1-GE3 si7615adn.pdf
SI7615ADN-T1-GE3
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 183nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2964 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+55.02 грн
11+40.95 грн
50+31.97 грн
100+28.51 грн
500+26.78 грн
Мінімальне замовлення: 9
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CMB02070X2101FB200
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 2.1kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 2.1kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Case: 0207 MELF
Operating temperature: -55...125°C
Diameter: 2.2mm
Body dimensions: Ø2.2x5.8mm
Length: 5.8mm
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Mounting: SMD
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CMB02070X2101FB700
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 2.1kΩ; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 2.1kΩ
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Case: 0207 MELF
Operating temperature: -55...125°C
Diameter: 2.2mm
Body dimensions: Ø2.2x5.8mm
Length: 5.8mm
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Mounting: SMD
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VS-KBPC608 kbpc1.pdf
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.2V; If: 6A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.2V
Load current: 6A
Max. forward impulse current: 125A
Version: square
Case: D-72; KBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
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VS-KBPC608PBF vs-kbpc1series.pdf
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.2V; If: 6A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.2V
Load current: 6A
Max. forward impulse current: 125A
Version: square
Case: D-72; KBPC6
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
товару немає в наявності
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