Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74521) > Сторінка 1183 з 1243
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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FZT600TA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Manufacturer standard package: 1000pcs. |
на замовлення 590 шт: термін постачання 14-30 дні (днів) |
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| DMT32M5LFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 2.3W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 67.7nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 7 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT32M5LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT32M5LPSW-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Power dissipation: 3.2W Case: PowerDI5060-8 On-state resistance: 2mΩ Mounting: SMD Gate charge: 34nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT69M5LCG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.7A Power dissipation: 2.64W Case: V-DFN3333-8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 208A Kind of package: 7 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT69M5LFVWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11.9A Power dissipation: 2.74W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 160A Kind of package: 13 inch reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMT69M5LH3 | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 60A Power dissipation: 3.3W Case: TO251 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 28.4nC Kind of channel: enhancement Pulsed drain current: 300A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMTH45M5LPSWQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 86A Power dissipation: 72W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 13.9nC Kind of channel: enhancement Pulsed drain current: 344A Kind of package: 13 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DMT10H4M5LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 2.3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 80nC Kind of channel: enhancement Pulsed drain current: 400A Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DMTH32M5LPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±16V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 13 inch reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DMTH45M5LPDWQ-13 | DIODES INCORPORATED |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Power dissipation: 3W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 7.9mΩ Mounting: SMD Gate charge: 13.9nC Kind of channel: enhancement Pulsed drain current: 316A Kind of package: 13 inch reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
| DMTH63M5LFGQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 90.3A Power dissipation: 3.4W Case: PowerDI3333-8 On-state resistance: 4mΩ Mounting: SMD Gate charge: 41.2nC Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| DMTH10H4M5LPS-13 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 14A Power dissipation: 2.7W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 80nC Kind of channel: enhancement Pulsed drain current: 400A Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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MMBT6427-7-F | DIODES INCORPORATED |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 40V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 3000pcs. |
на замовлення 1259 шт: термін постачання 14-30 дні (днів) |
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| DMG7408SFG-7 | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Power dissipation: 2.1W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 33mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhancement Pulsed drain current: 66A Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AZ1117D-ADJTRE1 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.25V Output voltage: 1.25...15V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: AZ1117 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AZ1117IH-ADJTRG1 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.3V Output voltage: 1.25...15V Output current: 1A Case: SOT223 Mounting: SMD Manufacturer series: AZ1117I Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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AZ1117ID-ADJTRG1 | DIODES INCORPORATED |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.4V Output voltage: 1.25...15V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: AZ1117I Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.5...10V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC857AT-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Manufacturer standard package: 3000pcs. |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||||
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BC857AW-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100...200MHz Manufacturer standard package: 3000pcs. Pulsed collector current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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B250-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape Mounting: SMD Max. forward voltage: 0.7V Max. off-state voltage: 50V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Capacitance: 0.2nF Type of diode: Schottky rectifying Max. forward impulse current: 50A |
на замовлення 241 шт: термін постачання 14-30 дні (днів) |
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B250A-13-F | DIODES INCORPORATED |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 50V; 2A; reel,tape Mounting: SMD Max. forward voltage: 0.7V Max. off-state voltage: 50V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 20mA Case: SMA Capacitance: 0.2nF Type of diode: Schottky rectifying Max. forward impulse current: 50A |
на замовлення 4726 шт: термін постачання 14-30 дні (днів) |
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BAS21TW-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: triple independent Features of semiconductor devices: small signal Case: SOT363 Max. forward voltage: 1.25V Max. forward impulse current: 10A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SBR10E45P5-7 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A Type of diode: rectifying Technology: SBR® Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: PowerDI®5 Max. forward voltage: 0.42V Max. forward impulse current: 275A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DDZ6V8ASF-7 | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Semiconductor structure: single diode Case: SOD323F Mounting: SMD Kind of package: reel; tape Power dissipation: 0.5W Zener voltage: 6.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZVN3320FTA | DIODES INCORPORATED |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23 Power dissipation: 0.33W Polarisation: unipolar Drain current: 60mA Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 25Ω Mounting: SMD |
на замовлення 1992 шт: термін постачання 14-30 дні (днів) |
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ZVP2110A | DIODES INCORPORATED |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.23A Pulsed drain current: -3A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement |
на замовлення 1102 шт: термін постачання 14-30 дні (днів) |
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ZVP2110ASTZ | DIODES INCORPORATED |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -0.23A Pulsed drain current: -3A Power dissipation: 0.7W Case: TO92 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DMP1045UFY4-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -5.1A Gate charge: 23.7nC On-state resistance: 75mΩ Power dissipation: 1.1W Kind of package: 7 inch reel; tape Gate-source voltage: ±8V Kind of channel: enhancement Case: X2-DFN2015-3 Pulsed drain current: -25A |
на замовлення 2490 шт: термін постачання 14-30 дні (днів) |
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DMP1045U-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD Drain-source voltage: -12V Drain current: -3.1A On-state resistance: 75mΩ Power dissipation: 0.8W Kind of package: 7 inch reel; tape Gate-source voltage: ±8V Kind of channel: enhancement Version: ESD Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DMP1045UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; automotive industry Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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SMAJ48A-13-F | DIODES INCORPORATED |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 5.2A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 3233 шт: термін постачання 14-30 дні (днів) |
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SMAJ48CA-13-F | DIODES INCORPORATED |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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FZT1048ATA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 17.5V Collector current: 5A Power dissipation: 3W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 1000pcs. |
на замовлення 868 шт: термін постачання 14-30 дні (днів) |
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FZT1049ATA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5A Power dissipation: 1.2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Manufacturer standard package: 1000pcs. Current gain: 300...1200 |
на замовлення 42 шт: термін постачання 14-30 дні (днів) |
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AP63200WU-7 | DIODES INCORPORATED |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 3.8...32V DC Output voltage: 1.2...12V DC Output current: 2A Case: TSOT26 Mounting: SMD Frequency: 0.5MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 93% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| ZXTN2005GTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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| S5GC-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 5A; SMC; Ufmax: 1.15V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 5A Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.15V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74LV32AT14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Family: LV Kind of input: with Schmitt trigger Kind of package: reel; tape Supply voltage: 2...5.5V DC Kind of output: push-pull Operating temperature: -40...150°C Technology: CMOS |
на замовлення 2317 шт: термін постачання 14-30 дні (днів) |
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ZXTN2031FTA | DIODES INCORPORATED |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 5A; 1.56W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 5A Power dissipation: 1.56W Case: SOT23 Current gain: 80...560 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Manufacturer standard package: 3000pcs. |
на замовлення 1394 шт: термін постачання 14-30 дні (днів) |
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74AHCT14T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C Type of integrated circuit: digital Kind of integrated circuit: inverter Number of channels: 6 Mounting: SMD Case: TSSOP14 Kind of output: push-pull Family: AHCT Supply voltage: 4.5...5.5V DC Number of inputs: 1 Kind of package: reel; tape Operating temperature: -40...150°C Technology: CMOS; TTL Kind of input: with Schmitt trigger |
на замовлення 2247 шт: термін постачання 14-30 дні (днів) |
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74LVC2G06DW-7 | DIODES INCORPORATED |
Category: Buffers, transceivers, driversDescription: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape Case: SOT363 Mounting: SMD Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Kind of output: open drain Operating temperature: -40...150°C Technology: CMOS Kind of package: reel; tape Family: LVC Kind of integrated circuit: inverter Number of channels: 2 |
на замовлення 1556 шт: термін постачання 14-30 дні (днів) |
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74HC05S14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: HC Kind of output: open drain Technology: CMOS Kind of input: with Schmitt trigger Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
74HC05T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: HC Kind of output: open drain Technology: CMOS Kind of input: with Schmitt trigger Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
AZ23C6V2-7-F | DIODES INCORPORATED |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 6.2V; SMD; SOT23; double,common anode Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Semiconductor structure: common anode; double Zener voltage: 6.2V Type of diode: Zener Tolerance: ±5% |
на замовлення 286 шт: термін постачання 14-30 дні (днів) |
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AS358GTR-G1 | DIODES INCORPORATED |
Category: SMD operational amplifiersDescription: IC: operational amplifier; Ch: 2; 3÷36VDC; TSSOP8; 100dB; 2mV; 500mW Type of integrated circuit: operational amplifier Mounting: SMT Voltage supply range: 3...36V DC Case: TSSOP8 Operating temperature: -40...85°C Kind of package: reel; tape Input offset voltage: 2mV Power dissipation: 0.5W Open-loop gain: 100dB Integrated circuit features: low power Number of channels: 2 |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
| DXT2014P5-13 | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 140V; 4A; 3.2W; PowerDI®5 Frequency: 120MHz Mounting: SMD Pulsed collector current: 10A Type of transistor: PNP Current gain: 5...300 Kind of package: reel; tape Case: PowerDI®5 Collector current: 4A Manufacturer standard package: 5000pcs. Collector-emitter voltage: 140V Power dissipation: 3.2W Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAS16HLPQ-7B | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: X1-DFN1006-2 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAS16HLP-7B | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: X1-DFN1006-2 Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BAS16HTWQ-13R | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BAS16HTW-13 | DIODES INCORPORATED |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BAS16HTWQ-13 | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: triple independent Case: SOT363 Max. forward voltage: 1.25V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SB550-T | DIODES INCORPORATED |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 50V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.67V Max. forward impulse current: 150A Kind of package: reel |
на замовлення 125 шт: термін постачання 14-30 дні (днів) |
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74AHC05T14-13 | DIODES INCORPORATED |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...150°C Kind of package: reel; tape Family: AHC Kind of output: open drain Technology: CMOS Kind of input: with Schmitt trigger Number of inputs: 1 Kind of integrated circuit: inverter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SBR2045CTFP-G | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 45V; 10Ax2; ITO220AB; tube; SBR® Type of diode: rectifying Case: ITO220AB Technology: SBR® Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
SBR20U100CT | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10Ax2; Ifsm: 200A; TO220AB; tube; SBR® Type of diode: rectifying Case: TO220AB Technology: SBR® Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 200A Kind of package: tube Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SBR20U100CTE-G | DIODES INCORPORATED |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 10Ax2; I2PAK; tube; SBR® Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: I2PAK Kind of package: tube Max. load current: 20A Technology: SBR® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BC858BW-7-F | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 3000pcs. Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BAV99-13-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Max. forward impulse current: 2A Features of semiconductor devices: small signal Capacitance: 2pF |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BAV99Q-7-F | DIODES INCORPORATED |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Max. forward impulse current: 2A Features of semiconductor devices: small signal Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| FZT600TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 140V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Manufacturer standard package: 1000pcs.
на замовлення 590 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.00 грн |
| 10+ | 48.42 грн |
| 50+ | 30.58 грн |
| 100+ | 26.39 грн |
| 250+ | 23.04 грн |
| 500+ | 21.61 грн |
| DMT32M5LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; Idm: 350A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 2.3W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 67.7nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 7 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMT32M5LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT32M5LPSW-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Power dissipation: 3.2W
Case: PowerDI5060-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 34nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMT69M5LCG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 208A; 2.64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.7A
Power dissipation: 2.64W
Case: V-DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 208A
Kind of package: 7 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMT69M5LFVWQ-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.9A; Idm: 160A; 2.74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11.9A
Power dissipation: 2.74W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 160A
Kind of package: 13 inch reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMT69M5LH3 |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 300A; 3.3W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 3.3W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 28.4nC
Kind of channel: enhancement
Pulsed drain current: 300A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| DMTH45M5LPSWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86A
Power dissipation: 72W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 344A
Kind of package: 13 inch reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| DMT10H4M5LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 400A; 2.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 2.3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMTH32M5LPSQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 3.2W
Case: PowerDI5060-8
Gate-source voltage: ±16V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Pulsed drain current: 350A
Kind of package: 13 inch reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMTH45M5LPDWQ-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 55A; Idm: 316A; 3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 3W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 13.9nC
Kind of channel: enhancement
Pulsed drain current: 316A
Kind of package: 13 inch reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DMTH63M5LFGQ-13 |
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90.3A; 3.4W; PowerDI3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90.3A
Power dissipation: 3.4W
Case: PowerDI3333-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 41.2nC
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMTH10H4M5LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 400A; 2.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14A
Power dissipation: 2.7W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 400A
Kind of package: 13 inch reel; tape
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Мінімальне замовлення: 2500 шт
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| MMBT6427-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 40V; 0.5A; 300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 40V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
на замовлення 1259 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.83 грн |
| 55+ | 7.62 грн |
| 86+ | 4.89 грн |
| 106+ | 3.95 грн |
| 500+ | 2.58 грн |
| 1000+ | 2.48 грн |
| DMG7408SFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Pulsed drain current: 66A
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.5A; Idm: 66A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.5A
Power dissipation: 2.1W
Case: PowerDI3333-8
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Pulsed drain current: 66A
Kind of package: 7 inch reel; tape
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| AZ1117D-ADJTRE1 |
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Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.25V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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| AZ1117IH-ADJTRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.3V
Output voltage: 1.25...15V
Output current: 1A
Case: SOT223
Mounting: SMD
Manufacturer series: AZ1117I
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
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Мінімальне замовлення: 4000 шт
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| AZ1117ID-ADJTRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷15V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.4V
Output voltage: 1.25...15V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: AZ1117I
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.5...10V
Kind of package: reel; tape
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| BC857AT-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 100mA; 150mW; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT523
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 3000pcs.
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Мінімальне замовлення: 20 шт
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| BC857AW-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...200MHz
Manufacturer standard package: 3000pcs.
Pulsed collector current: 0.2A
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| B250-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 50V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 50V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
на замовлення 241 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.31 грн |
| 16+ | 26.81 грн |
| 19+ | 23.04 грн |
| 100+ | 14.66 грн |
| 131+ | 7.37 грн |
| B250A-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 50V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMA
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 50V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20mA
Case: SMA
Capacitance: 0.2nF
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
на замовлення 4726 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.11 грн |
| 14+ | 30.66 грн |
| 17+ | 25.38 грн |
| 25+ | 19.86 грн |
| 50+ | 16.84 грн |
| 100+ | 14.91 грн |
| 126+ | 7.62 грн |
| 345+ | 7.20 грн |
| BAS21TW-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SOT363
Max. forward voltage: 1.25V
Max. forward impulse current: 10A
Kind of package: reel; tape
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| SBR10E45P5-7 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 45V; 10A; PowerDI®5; Ufmax: 0.42V; Ifsm: 275A
Type of diode: rectifying
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: PowerDI®5
Max. forward voltage: 0.42V
Max. forward impulse current: 275A
Kind of package: reel; tape
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| DDZ6V8ASF-7 |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Zener voltage: 6.8V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Semiconductor structure: single diode
Case: SOD323F
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.5W
Zener voltage: 6.8V
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| ZVN3320FTA |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Power dissipation: 0.33W
Polarisation: unipolar
Drain current: 60mA
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 25Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.06A; 0.33W; SOT23
Power dissipation: 0.33W
Polarisation: unipolar
Drain current: 60mA
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 25Ω
Mounting: SMD
на замовлення 1992 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.55 грн |
| 11+ | 41.22 грн |
| 12+ | 35.35 грн |
| 25+ | 28.74 грн |
| 50+ | 24.46 грн |
| 100+ | 20.78 грн |
| 500+ | 16.17 грн |
| 1500+ | 14.74 грн |
| ZVP2110A |
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Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.23A; Idm: -3A; 0.7W; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
на замовлення 1102 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.54 грн |
| 10+ | 58.64 грн |
| 25+ | 47.59 грн |
| 50+ | 40.88 грн |
| 70+ | 38.29 грн |
| 100+ | 35.77 грн |
| 500+ | 29.24 грн |
| ZVP2110ASTZ |
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Виробник: DIODES INCORPORATED
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -230mA; Idm: -3A; 700mW; TO92
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.23A
Pulsed drain current: -3A
Power dissipation: 0.7W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
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| DMP1045UFY4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: X2-DFN2015-3
Pulsed drain current: -25A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.1A; Idm: -25A; 1.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -5.1A
Gate charge: 23.7nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: X2-DFN2015-3
Pulsed drain current: -25A
на замовлення 2490 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.40 грн |
| 13+ | 32.34 грн |
| 15+ | 27.98 грн |
| 100+ | 16.00 грн |
| 500+ | 11.39 грн |
| 1000+ | 10.14 грн |
| DMP1045U-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Drain-source voltage: -12V
Drain current: -3.1A
On-state resistance: 75mΩ
Power dissipation: 0.8W
Kind of package: 7 inch reel; tape
Gate-source voltage: ±8V
Kind of channel: enhancement
Version: ESD
Case: SOT23
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| DMP1045UQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; automotive industry
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; automotive industry
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| SMAJ48A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 3233 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.04 грн |
| 31+ | 13.74 грн |
| 35+ | 11.98 грн |
| 100+ | 6.89 грн |
| 500+ | 5.16 грн |
| 1000+ | 4.73 грн |
| 2500+ | 4.34 грн |
| SMAJ48CA-13-F |
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Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| FZT1048ATA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 17.5V; 5A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 17.5V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
на замовлення 868 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.46 грн |
| 10+ | 50.18 грн |
| 25+ | 45.91 грн |
| 35+ | 27.65 грн |
| 96+ | 26.14 грн |
| FZT1049ATA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Manufacturer standard package: 1000pcs.
Current gain: 300...1200
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5A; 1.2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 1.2W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Manufacturer standard package: 1000pcs.
Current gain: 300...1200
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 101.05 грн |
| 10+ | 62.92 грн |
| 25+ | 51.77 грн |
| AP63200WU-7 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷32VDC; Uout: 1.2÷12VDC; 2A; TSOT26
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...32V DC
Output voltage: 1.2...12V DC
Output current: 2A
Case: TSOT26
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 93%
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| ZXTN2005GTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 35.46 грн |
| S5GC-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 5A; SMC; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 5A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 5A; SMC; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 5A
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.15V
Kind of package: reel; tape
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| 74LV32AT14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: LV
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷150°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Family: LV
Kind of input: with Schmitt trigger
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Kind of output: push-pull
Operating temperature: -40...150°C
Technology: CMOS
на замовлення 2317 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 21.47 грн |
| 26+ | 16.59 грн |
| 29+ | 14.66 грн |
| 34+ | 12.40 грн |
| 100+ | 10.05 грн |
| 113+ | 8.46 грн |
| 311+ | 8.04 грн |
| ZXTN2031FTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.56W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1.56W
Case: SOT23
Current gain: 80...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1.56W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1.56W
Case: SOT23
Current gain: 80...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Manufacturer standard package: 3000pcs.
на замовлення 1394 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.35 грн |
| 11+ | 38.96 грн |
| 100+ | 29.57 грн |
| 500+ | 26.14 грн |
| 74AHCT14T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Kind of output: push-pull
Family: AHCT
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Kind of package: reel; tape
Operating temperature: -40...150°C
Technology: CMOS; TTL
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; -40÷150°C
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Kind of output: push-pull
Family: AHCT
Supply voltage: 4.5...5.5V DC
Number of inputs: 1
Kind of package: reel; tape
Operating temperature: -40...150°C
Technology: CMOS; TTL
Kind of input: with Schmitt trigger
на замовлення 2247 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.65 грн |
| 31+ | 13.66 грн |
| 34+ | 12.40 грн |
| 100+ | 10.72 грн |
| 136+ | 7.04 грн |
| 373+ | 6.70 грн |
| 74LVC2G06DW-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Case: SOT363
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Kind of output: open drain
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Family: LVC
Kind of integrated circuit: inverter
Number of channels: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter; Ch: 2; CMOS; SMD; SOT363; -40÷150°C; reel,tape
Case: SOT363
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Kind of output: open drain
Operating temperature: -40...150°C
Technology: CMOS
Kind of package: reel; tape
Family: LVC
Kind of integrated circuit: inverter
Number of channels: 2
на замовлення 1556 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.34 грн |
| 37+ | 11.39 грн |
| 43+ | 9.89 грн |
| 51+ | 8.29 грн |
| 58+ | 7.29 грн |
| 100+ | 6.70 грн |
| 216+ | 4.44 грн |
| 594+ | 4.19 грн |
| 74HC05S14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷150°C; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of integrated circuit: inverter
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| 74HC05T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; CMOS; SMD; TSSOP14; 2÷6VDC; -40÷150°C
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: HC
Kind of output: open drain
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of integrated circuit: inverter
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| AZ23C6V2-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOT23; double,common anode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Semiconductor structure: common anode; double
Zener voltage: 6.2V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; SOT23; double,common anode
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.3W
Semiconductor structure: common anode; double
Zener voltage: 6.2V
Type of diode: Zener
Tolerance: ±5%
на замовлення 286 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.73 грн |
| 66+ | 6.37 грн |
| 73+ | 5.80 грн |
| 79+ | 5.36 грн |
| 100+ | 4.94 грн |
| 250+ | 4.39 грн |
| AS358GTR-G1 |
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Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; TSSOP8; 100dB; 2mV; 500mW
Type of integrated circuit: operational amplifier
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Input offset voltage: 2mV
Power dissipation: 0.5W
Open-loop gain: 100dB
Integrated circuit features: low power
Number of channels: 2
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; 3÷36VDC; TSSOP8; 100dB; 2mV; 500mW
Type of integrated circuit: operational amplifier
Mounting: SMT
Voltage supply range: 3...36V DC
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Input offset voltage: 2mV
Power dissipation: 0.5W
Open-loop gain: 100dB
Integrated circuit features: low power
Number of channels: 2
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| DXT2014P5-13 |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 3.2W; PowerDI®5
Frequency: 120MHz
Mounting: SMD
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 5...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 4A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 140V
Power dissipation: 3.2W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 140V; 4A; 3.2W; PowerDI®5
Frequency: 120MHz
Mounting: SMD
Pulsed collector current: 10A
Type of transistor: PNP
Current gain: 5...300
Kind of package: reel; tape
Case: PowerDI®5
Collector current: 4A
Manufacturer standard package: 5000pcs.
Collector-emitter voltage: 140V
Power dissipation: 3.2W
Polarisation: bipolar
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| BAS16HLPQ-7B |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAS16HLP-7B |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 4ns; X1-DFN1006-2; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: X1-DFN1006-2
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAS16HTWQ-13R |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| BAS16HTW-13 |
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| BAS16HTWQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT363; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SOT363
Max. forward voltage: 1.25V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| SB550-T |
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Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 5A; DO201AD; Ufmax: 0.67V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.67V
Max. forward impulse current: 150A
Kind of package: reel
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.13 грн |
| 11+ | 40.05 грн |
| 12+ | 36.11 грн |
| 100+ | 25.38 грн |
| 74AHC05T14-13 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: open drain
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷5.5VDC; AHC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Family: AHC
Kind of output: open drain
Technology: CMOS
Kind of input: with Schmitt trigger
Number of inputs: 1
Kind of integrated circuit: inverter
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| SBR2045CTFP-G |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; ITO220AB; tube; SBR®
Type of diode: rectifying
Case: ITO220AB
Technology: SBR®
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 45V; 10Ax2; ITO220AB; tube; SBR®
Type of diode: rectifying
Case: ITO220AB
Technology: SBR®
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. load current: 20A
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| SBR20U100CT |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; Ifsm: 200A; TO220AB; tube; SBR®
Type of diode: rectifying
Case: TO220AB
Technology: SBR®
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 20A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; Ifsm: 200A; TO220AB; tube; SBR®
Type of diode: rectifying
Case: TO220AB
Technology: SBR®
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 20A
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| SBR20U100CTE-G |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; I2PAK; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Max. load current: 20A
Technology: SBR®
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 10Ax2; I2PAK; tube; SBR®
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: I2PAK
Kind of package: tube
Max. load current: 20A
Technology: SBR®
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| BC858BW-7-F |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Frequency: 200MHz
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| BAV99-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
Capacitance: 2pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
Capacitance: 2pF
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Мінімальне замовлення: 10000 шт
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| BAV99Q-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Max. forward impulse current: 2A
Features of semiconductor devices: small signal
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.




























