Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74565) > Сторінка 1184 з 1243
Фото | Назва | Виробник | Інформація |
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74HC126S14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HC; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Manufacturer series: HC Kind of package: reel; tape Operating temperature: -40...125°C Quiescent current: 40µA Kind of output: 3-state |
на замовлення 1643 шт: термін постачання 21-30 дні (днів) |
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74HC126T14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; HC; 2÷6VDC Case: TSSOP14 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: digital Manufacturer series: HC Operating temperature: -40...125°C Quiescent current: 40µA Supply voltage: 2...6V DC Number of channels: 4 Kind of output: 3-state Kind of integrated circuit: buffer; non-inverting |
на замовлення 2370 шт: термін постачання 21-30 дні (днів) |
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US1G-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SMA Kind of package: reel; tape Capacitance: 20pF Max. forward voltage: 1.3V Max. forward impulse current: 30A |
на замовлення 3333 шт: термін постачання 21-30 дні (днів) |
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SMAJ30A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Leakage current: 5µA Features of semiconductor devices: glass passivated |
на замовлення 4759 шт: термін постачання 21-30 дні (днів) |
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74HC138S16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder Mounting: SMD Case: SO16 Family: HC Supply voltage: 2...6V DC Operating temperature: -40...150°C Kind of package: reel; tape Technology: CMOS Kind of input: with Schmitt trigger Kind of output: push-pull Number of channels: 8 Number of inputs: 6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
74HC138T16-13 | DIODES INCORPORATED |
![]() Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6 Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder Mounting: SMD Case: TSSOP16 Family: HC Supply voltage: 2...6V DC Operating temperature: -40...150°C Kind of package: reel; tape Technology: CMOS Kind of input: with Schmitt trigger Kind of output: push-pull Number of channels: 8 Number of inputs: 6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMP3056LDMQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.3A Power dissipation: 1.25W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 2996 шт: термін постачання 21-30 дні (днів) |
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74LVC2G17W6-7 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT26; LVC; -40÷125°C Case: SOT26 Mounting: SMD Kind of package: reel; tape Kind of input: with Schmitt trigger Operating temperature: -40...125°C Quiescent current: 40µA Number of channels: 2 Supply voltage: 1.65...5.5V DC Kind of integrated circuit: buffer; non-inverting Kind of output: push-pull Manufacturer series: LVC Type of integrated circuit: digital |
на замовлення 2600 шт: термін постачання 21-30 дні (днів) |
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74LVC1G11DW-7 | DIODES INCORPORATED |
![]() Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC Operating temperature: -40...150°C Mounting: SMD Kind of package: reel; tape Number of channels: 1 Supply voltage: 1.65...5.5V DC Number of inputs: 3 Case: SOT363 Kind of output: push-pull Family: LVC Type of integrated circuit: digital Kind of gate: AND Technology: CMOS |
на замовлення 2640 шт: термін постачання 21-30 дні (днів) |
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74LVC1G08SE-7 | DIODES INCORPORATED |
![]() Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 1.65÷5.5VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SOT353 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 200µA Family: LVC Kind of output: push-pull |
на замовлення 773 шт: термін постачання 21-30 дні (днів) |
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BZT52C15-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 1076 шт: термін постачання 21-30 дні (днів) |
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BZT52C15S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 2740 шт: термін постачання 21-30 дні (днів) |
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BZT52C15SQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
на замовлення 900 шт: термін постачання 21-30 дні (днів) |
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AP3211KTR-G1 | DIODES INCORPORATED |
![]() Description: PMIC; DC/DC converter; Uin: 4.75÷18VDC; Uout: 0.81÷15VDC; 1.5A Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...18V DC Output voltage: 0.81...15V DC Output current: 1.5A Case: SOT23-6 Mounting: SMD Frequency: 1.4MHz Topology: buck Operating temperature: -40...85°C Kind of package: reel; tape Efficiency: 92% |
на замовлення 448 шт: термін постачання 21-30 дні (днів) |
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PAM8407DR | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; Pout: 3W; Ch: 2; Amp.class: D; SOP16; 2.5÷6VDC Operating temperature: -40...125°C Output power: 3W Voltage supply range: 2.5...6V DC Kind of package: reel; tape Amplifier class: D Integrated circuit features: low distortion THD; low noise; stereo; thermal protection Case: SOP16 Type of integrated circuit: audio amplifier Mounting: SMD Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8408DR | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; Pout: 3W; Ch: 2; Amp.class: D; SO16L; 2.5÷6VDC Type of integrated circuit: audio amplifier Output power: 3W Integrated circuit features: low distortion THD; low noise; stereo; thermal protection Mounting: SMD Number of channels: 2 Amplifier class: D Case: SO16L Operating temperature: -40...125°C Kind of package: reel; tape Voltage supply range: 2.5...6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AS7805AT-E1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220-3; THT; AS78XXA Mounting: THT Kind of package: tube Case: TO220-3 Kind of voltage regulator: fixed; linear Operating temperature: -40...125°C Output voltage: 5V Output current: 1A Number of channels: 1 Voltage drop: 2V Tolerance: ±4% Input voltage: 7.5...20V Manufacturer series: AS78XXA Type of integrated circuit: voltage regulator |
на замовлення 1191 шт: термін постачання 21-30 дні (днів) |
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DF10M | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM Max. off-state voltage: 1kV Case: DFM Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Electrical mounting: THT Kind of package: tube Load current: 1A Max. forward voltage: 1.1V Max. forward impulse current: 50A |
на замовлення 247 шт: термін постачання 21-30 дні (днів) |
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AP22966DC8-7 | DIODES INCORPORATED |
![]() Description: IC: power switch; load switch; 6A; Ch: 2; N-Channel; SMD; reel,tape Active logical level: high Kind of integrated circuit: load switch Kind of output: N-Channel Type of integrated circuit: power switch Kind of package: reel; tape Case: VDFN3020-14 Mounting: SMD On-state resistance: 18mΩ Supply voltage: 0.8...5.5V DC Number of channels: 2 Output current: 6A |
на замовлення 2975 шт: термін постачання 21-30 дні (днів) |
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APX803L40-16SA-7 | DIODES INCORPORATED |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23 Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 0.9...5.5V DC Case: SOT23 Operating temperature: -40...85°C Mounting: SMD DC supply current: 1µA Maximum output current: 20mA Threshold on-voltage: 1.6V Kind of package: reel; tape Delay time: 450ms Integrated circuit features: ±1,5% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C5V1-13-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Case: SOD123 Power dissipation: 0.37W Tolerance: ±6% Zener voltage: 5.1V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C5V1-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 5.1V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode |
на замовлення 5867 шт: термін постачання 21-30 дні (днів) |
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BZT52C5V1S-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
на замовлення 314 шт: термін постачання 21-30 дні (днів) |
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BZT52C5V1SQ-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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BCX5410TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: SOT89 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX5416TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1W Case: SOT89 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
на замовлення 1508 шт: термін постачання 21-30 дні (днів) |
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FZT653TA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 120V; 2A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 2A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 175MHz |
на замовлення 401 шт: термін постачання 21-30 дні (днів) |
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DF04S-T | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS Max. off-state voltage: 0.4kV Load current: 1A Case: DFS Max. forward voltage: 1.1V Max. forward impulse current: 50A Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Features of semiconductor devices: glass passivated |
на замовлення 873 шт: термін постачання 21-30 дні (днів) |
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DF08S-T | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
на замовлення 1285 шт: термін постачання 21-30 дні (днів) |
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SBR12A45SP5-13 | DIODES INCORPORATED |
![]() Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 45V; 12A Type of diode: Schottky rectifying Case: PowerDI®5 Technology: SBR® Mounting: SMD Max. off-state voltage: 45V Load current: 12A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 280A Kind of package: reel; tape Leakage current: 75mA Capacitance: 1nF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT3020LFDBQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W Case: U-DFN2020-6 Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 7nC On-state resistance: 32mΩ Power dissipation: 1.8W Drain current: 6.2A Drain-source voltage: 30V Pulsed drain current: 50A Kind of package: 7 inch reel; tape Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6002LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 130.8nC On-state resistance: 3mΩ Power dissipation: 2.3W Drain current: 100A Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6004LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 78.3nC On-state resistance: 4.5mΩ Power dissipation: 2.5W Drain current: 16A Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMT6004SCT | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB Case: TO220AB Kind of package: tube Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 95.4nC On-state resistance: 3.1mΩ Power dissipation: 113W Drain current: 100A Gate-source voltage: ±20V Pulsed drain current: 180A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
DMT6004SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 95.4nC On-state resistance: 3.1mΩ Power dissipation: 2.6W Drain current: 18A Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6005LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 48.7nC On-state resistance: 7mΩ Power dissipation: 1.98W Drain current: 14A Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6005LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 48.7nC On-state resistance: 7mΩ Power dissipation: 1.98W Drain current: 14A Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6005LPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 47.1nC On-state resistance: 6.5mΩ Power dissipation: 2.6W Drain current: 14.7A Gate-source voltage: ±20V Pulsed drain current: 500A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6006LK3-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252 Case: TO252 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 34.9nC On-state resistance: 10mΩ Power dissipation: 3.1W Drain current: 71A Gate-source voltage: ±20V Pulsed drain current: 350A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMT6006LSS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8 Case: SO8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 34.9nC On-state resistance: 10mΩ Power dissipation: 2.08W Drain current: 11.7A Gate-source voltage: ±20V Pulsed drain current: 110A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
DMT6006SPS-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 27.9nC On-state resistance: 6.2mΩ Power dissipation: 2.45W Drain current: 13A Gate-source voltage: ±20V Pulsed drain current: 390A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6007LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 8.5mΩ Power dissipation: 2.2W Drain current: 12A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DMT6007LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8 Case: PowerDI®3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 8.5mΩ Power dissipation: 2.2W Drain current: 70A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement |
на замовлення 1871 шт: термін постачання 21-30 дні (днів) |
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DMT6007LFGQ-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 8.5mΩ Power dissipation: 2.2W Drain current: 12A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6007LFGQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 41.3nC On-state resistance: 8.5mΩ Power dissipation: 2.2W Drain current: 12A Gate-source voltage: ±20V Pulsed drain current: 80A Drain-source voltage: 60V Application: automotive industry Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6008LFG-13 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 50.4nC On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±12V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMT6008LFG-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W Case: PowerDI3333-8 Kind of package: 7 inch reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 50.4nC On-state resistance: 11.5mΩ Power dissipation: 2.2W Drain current: 11A Gate-source voltage: ±12V Pulsed drain current: 80A Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ30A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...38.3V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: reel; tape Leakage current: 5µA Features of semiconductor devices: glass passivated |
на замовлення 4750 шт: термін постачання 21-30 дні (днів) |
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AP2112K-1.2TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD Kind of package: reel; tape Integrated circuit features: shutdown mode control input Mounting: SMD Case: SOT23-5 Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Voltage drop: 1.3V Output current: 0.6A Number of channels: 1 Output voltage: 1.2V Tolerance: ±1.5% Input voltage: 2.5...6V Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AP2112K-2.5TRG1 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD Kind of package: reel; tape Integrated circuit features: shutdown mode control input Mounting: SMD Case: SOT23-5 Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Voltage drop: 0.4V Output current: 0.6A Number of channels: 1 Output voltage: 2.5V Tolerance: ±1.5% Input voltage: 2.5...6V Kind of voltage regulator: fixed; LDO; linear |
на замовлення 2985 шт: термін постачання 21-30 дні (днів) |
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SMAJ58A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape Features of semiconductor devices: glass passivated Type of diode: TVS Leakage current: 5µA Max. forward impulse current: 4.3A Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Peak pulse power dissipation: 0.4kW Case: SMA Kind of package: reel; tape Mounting: SMD Semiconductor structure: unidirectional |
на замовлення 1164 шт: термін постачання 21-30 дні (днів) |
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DMC3021LSD-13 | DIODES INCORPORATED |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 7/-8.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.021/0.039Ω Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
на замовлення 2521 шт: термін постачання 21-30 дні (днів) |
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SMAJ6.5A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 35.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.5mA Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 2135 шт: термін постачання 21-30 дні (днів) |
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BSS127S-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 70mA Power dissipation: 0.61W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 160Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
на замовлення 616 шт: термін постачання 21-30 дні (днів) |
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SMBJ58A-13-F | DIODES INCORPORATED |
![]() Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...74.6V Max. forward impulse current: 6.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2423 шт: термін постачання 21-30 дні (днів) |
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74HCT125S14-13 | DIODES INCORPORATED |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Operating temperature: -40...125°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Quiescent current: 40µA Manufacturer series: HCT Kind of package: reel; tape |
на замовлення 1710 шт: термін постачання 21-30 дні (днів) |
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TL431ASA-7 | DIODES INCORPORATED |
![]() Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
на замовлення 257 шт: термін постачання 21-30 дні (днів) |
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PAM8902HKER | DIODES INCORPORATED |
![]() Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC Type of integrated circuit: audio amplifier Voltage supply range: 2.5...5.5V DC Case: QFN16 Amplifier class: D Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8904EGPR | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; WQFN12; 1.5÷5.5VDC Type of integrated circuit: driver Voltage supply range: 1.5...5.5V DC Case: WQFN12 Kind of integrated circuit: piezo sounder Kind of package: reel; tape Mounting: SMD Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PAM8904EJER | DIODES INCORPORATED |
![]() Description: IC: driver; piezo sounder; UQFN16; 1.5÷5.5VDC Type of integrated circuit: driver Voltage supply range: 1.5...5.5V DC Case: UQFN16 Kind of integrated circuit: piezo sounder Kind of package: reel; tape Mounting: SMD Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. |
74HC126S14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Manufacturer series: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 40µA
Kind of output: 3-state
на замовлення 1643 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.61 грн |
28+ | 14.57 грн |
32+ | 12.75 грн |
37+ | 10.93 грн |
100+ | 8.95 грн |
144+ | 6.49 грн |
394+ | 6.10 грн |
74HC126T14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; HC; 2÷6VDC
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Manufacturer series: HC
Operating temperature: -40...125°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Number of channels: 4
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; HC; 2÷6VDC
Case: TSSOP14
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Manufacturer series: HC
Operating temperature: -40...125°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Number of channels: 4
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
на замовлення 2370 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.61 грн |
28+ | 14.57 грн |
32+ | 12.75 грн |
37+ | 10.93 грн |
100+ | 8.95 грн |
144+ | 6.49 грн |
394+ | 6.18 грн |
US1G-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Capacitance: 20pF
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Capacitance: 20pF
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
на замовлення 3333 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.87 грн |
23+ | 17.73 грн |
50+ | 12.97 грн |
100+ | 11.18 грн |
250+ | 9.20 грн |
259+ | 3.59 грн |
713+ | 3.40 грн |
SMAJ30A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
на замовлення 4759 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.32 грн |
30+ | 13.30 грн |
100+ | 4.43 грн |
217+ | 4.29 грн |
596+ | 4.06 грн |
74HC138S16-13 |
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Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: SO16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of channels: 8
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: SO16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of channels: 8
Number of inputs: 6
товару немає в наявності
В кошику
од. на суму грн.
74HC138T16-13 |
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Виробник: DIODES INCORPORATED
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of channels: 8
Number of inputs: 6
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder,demultiplexer; Ch: 8; IN: 6
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; demultiplexer; line decoder
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Technology: CMOS
Kind of input: with Schmitt trigger
Kind of output: push-pull
Number of channels: 8
Number of inputs: 6
товару немає в наявності
В кошику
од. на суму грн.
DMP3056LDMQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.25W; SOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.25W
Case: SOT26
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2996 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.30 грн |
14+ | 29.37 грн |
79+ | 11.80 грн |
218+ | 11.16 грн |
74LVC2G17W6-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT26; LVC; -40÷125°C
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Quiescent current: 40µA
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: buffer; non-inverting
Kind of output: push-pull
Manufacturer series: LVC
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SOT26; LVC; -40÷125°C
Case: SOT26
Mounting: SMD
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Quiescent current: 40µA
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Kind of integrated circuit: buffer; non-inverting
Kind of output: push-pull
Manufacturer series: LVC
Type of integrated circuit: digital
на замовлення 2600 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 17.05 грн |
32+ | 12.51 грн |
37+ | 10.93 грн |
43+ | 9.26 грн |
100+ | 7.52 грн |
152+ | 6.18 грн |
417+ | 5.86 грн |
74LVC1G11DW-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Number of inputs: 3
Case: SOT363
Kind of output: push-pull
Family: LVC
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 3; CMOS; SMD; SOT363; 1.65÷5.5VDC; LVC
Operating temperature: -40...150°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Number of inputs: 3
Case: SOT363
Kind of output: push-pull
Family: LVC
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
на замовлення 2640 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
54+ | 7.44 грн |
64+ | 6.27 грн |
72+ | 5.53 грн |
100+ | 4.95 грн |
250+ | 4.41 грн |
333+ | 2.80 грн |
913+ | 2.65 грн |
74LVC1G08SE-7 |
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Виробник: DIODES INCORPORATED
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 1.65÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Family: LVC
Kind of output: push-pull
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT353; 1.65÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT353
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 200µA
Family: LVC
Kind of output: push-pull
на замовлення 773 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
44+ | 9.03 грн |
50+ | 7.92 грн |
61+ | 6.56 грн |
69+ | 5.76 грн |
100+ | 5.16 грн |
250+ | 4.60 грн |
385+ | 2.41 грн |
BZT52C15-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 1076 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
61+ | 6.99 грн |
76+ | 5.23 грн |
85+ | 4.67 грн |
144+ | 2.76 грн |
200+ | 2.37 грн |
500+ | 1.96 грн |
771+ | 1.21 грн |
BZT52C15S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 2740 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.38 грн |
53+ | 7.60 грн |
61+ | 6.57 грн |
108+ | 3.67 грн |
500+ | 2.73 грн |
651+ | 1.43 грн |
1789+ | 1.35 грн |
BZT52C15SQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
на замовлення 900 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
74+ | 5.38 грн |
82+ | 4.83 грн |
114+ | 3.49 грн |
500+ | 2.42 грн |
522+ | 1.78 грн |
AP3211KTR-G1 |
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Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷18VDC; Uout: 0.81÷15VDC; 1.5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...18V DC
Output voltage: 0.81...15V DC
Output current: 1.5A
Case: SOT23-6
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 92%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷18VDC; Uout: 0.81÷15VDC; 1.5A
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...18V DC
Output voltage: 0.81...15V DC
Output current: 1.5A
Case: SOT23-6
Mounting: SMD
Frequency: 1.4MHz
Topology: buck
Operating temperature: -40...85°C
Kind of package: reel; tape
Efficiency: 92%
на замовлення 448 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.28 грн |
22+ | 18.05 грн |
25+ | 16.23 грн |
72+ | 13.06 грн |
197+ | 12.35 грн |
PAM8407DR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; Ch: 2; Amp.class: D; SOP16; 2.5÷6VDC
Operating temperature: -40...125°C
Output power: 3W
Voltage supply range: 2.5...6V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Case: SOP16
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 2
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; Ch: 2; Amp.class: D; SOP16; 2.5÷6VDC
Operating temperature: -40...125°C
Output power: 3W
Voltage supply range: 2.5...6V DC
Kind of package: reel; tape
Amplifier class: D
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Case: SOP16
Type of integrated circuit: audio amplifier
Mounting: SMD
Number of channels: 2
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PAM8408DR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; Ch: 2; Amp.class: D; SO16L; 2.5÷6VDC
Type of integrated circuit: audio amplifier
Output power: 3W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: SO16L
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...6V DC
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 3W; Ch: 2; Amp.class: D; SO16L; 2.5÷6VDC
Type of integrated circuit: audio amplifier
Output power: 3W
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Mounting: SMD
Number of channels: 2
Amplifier class: D
Case: SO16L
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage supply range: 2.5...6V DC
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AS7805AT-E1 |
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Виробник: DIODES INCORPORATED
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220-3; THT; AS78XXA
Mounting: THT
Kind of package: tube
Case: TO220-3
Kind of voltage regulator: fixed; linear
Operating temperature: -40...125°C
Output voltage: 5V
Output current: 1A
Number of channels: 1
Voltage drop: 2V
Tolerance: ±4%
Input voltage: 7.5...20V
Manufacturer series: AS78XXA
Type of integrated circuit: voltage regulator
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220-3; THT; AS78XXA
Mounting: THT
Kind of package: tube
Case: TO220-3
Kind of voltage regulator: fixed; linear
Operating temperature: -40...125°C
Output voltage: 5V
Output current: 1A
Number of channels: 1
Voltage drop: 2V
Tolerance: ±4%
Input voltage: 7.5...20V
Manufacturer series: AS78XXA
Type of integrated circuit: voltage regulator
на замовлення 1191 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.84 грн |
21+ | 19.32 грн |
25+ | 17.42 грн |
77+ | 12.19 грн |
211+ | 11.56 грн |
DF10M |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Max. off-state voltage: 1kV
Case: DFM
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Kind of package: tube
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 50A; DFM
Max. off-state voltage: 1kV
Case: DFM
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Kind of package: tube
Load current: 1A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
на замовлення 247 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.60 грн |
16+ | 25.33 грн |
50+ | 19.40 грн |
83+ | 11.40 грн |
226+ | 10.77 грн |
AP22966DC8-7 |
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Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 6A; Ch: 2; N-Channel; SMD; reel,tape
Active logical level: high
Kind of integrated circuit: load switch
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: VDFN3020-14
Mounting: SMD
On-state resistance: 18mΩ
Supply voltage: 0.8...5.5V DC
Number of channels: 2
Output current: 6A
Category: Power switches - integrated circuits
Description: IC: power switch; load switch; 6A; Ch: 2; N-Channel; SMD; reel,tape
Active logical level: high
Kind of integrated circuit: load switch
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: reel; tape
Case: VDFN3020-14
Mounting: SMD
On-state resistance: 18mΩ
Supply voltage: 0.8...5.5V DC
Number of channels: 2
Output current: 6A
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 26.43 грн |
20+ | 20.58 грн |
22+ | 18.13 грн |
26+ | 15.44 грн |
84+ | 11.16 грн |
229+ | 10.61 грн |
APX803L40-16SA-7 |
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Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
Kind of package: reel; tape
Delay time: 450ms
Integrated circuit features: ±1,5% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT23
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 0.9...5.5V DC
Case: SOT23
Operating temperature: -40...85°C
Mounting: SMD
DC supply current: 1µA
Maximum output current: 20mA
Threshold on-voltage: 1.6V
Kind of package: reel; tape
Delay time: 450ms
Integrated circuit features: ±1,5% accuracy
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BZT52C5V1-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Power dissipation: 0.37W
Tolerance: ±6%
Zener voltage: 5.1V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123
Power dissipation: 0.37W
Tolerance: ±6%
Zener voltage: 5.1V
Kind of package: reel; tape
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BZT52C5V1-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
на замовлення 5867 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
54+ | 7.90 грн |
90+ | 4.43 грн |
112+ | 3.56 грн |
199+ | 2.00 грн |
500+ | 1.55 грн |
754+ | 1.24 грн |
2071+ | 1.17 грн |
BZT52C5V1S-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 314 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.53 грн |
60+ | 6.65 грн |
67+ | 5.94 грн |
91+ | 4.37 грн |
104+ | 3.84 грн |
BZT52C5V1SQ-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.67 грн |
74+ | 5.38 грн |
82+ | 4.83 грн |
112+ | 3.54 грн |
BCX5410TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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BCX5416TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 1508 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.99 грн |
22+ | 18.53 грн |
50+ | 12.67 грн |
100+ | 10.69 грн |
187+ | 4.99 грн |
512+ | 4.75 грн |
FZT653TA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 175MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 2A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 175MHz
на замовлення 401 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 63.95 грн |
10+ | 39.74 грн |
50+ | 30.72 грн |
51+ | 18.53 грн |
138+ | 17.50 грн |
DF04S-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 0.4kV
Load current: 1A
Case: DFS
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
на замовлення 873 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.63 грн |
15+ | 27.31 грн |
25+ | 22.17 грн |
92+ | 10.13 грн |
253+ | 9.58 грн |
DF08S-T |
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Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 1285 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.30 грн |
11+ | 38.48 грн |
13+ | 32.30 грн |
25+ | 23.43 грн |
58+ | 16.15 грн |
100+ | 14.73 грн |
SBR12A45SP5-13 |
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Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 45V; 12A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 280A
Kind of package: reel; tape
Leakage current: 75mA
Capacitance: 1nF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SBR®; SMD; 45V; 12A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: SBR®
Mounting: SMD
Max. off-state voltage: 45V
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 280A
Kind of package: reel; tape
Leakage current: 75mA
Capacitance: 1nF
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DMT3020LFDBQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 50A; 1.8W
Case: U-DFN2020-6
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7nC
On-state resistance: 32mΩ
Power dissipation: 1.8W
Drain current: 6.2A
Drain-source voltage: 30V
Pulsed drain current: 50A
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMT6002LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 2.3W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 130.8nC
On-state resistance: 3mΩ
Power dissipation: 2.3W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; Idm: 400A; 2.5W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 78.3nC
On-state resistance: 4.5mΩ
Power dissipation: 2.5W
Drain current: 16A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SCT |
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Виробник: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 180A; 113W; TO220AB
Case: TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 113W
Drain current: 100A
Gate-source voltage: ±20V
Pulsed drain current: 180A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6004SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; Idm: 400A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 95.4nC
On-state resistance: 3.1mΩ
Power dissipation: 2.6W
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 400A; 1.98W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 48.7nC
On-state resistance: 7mΩ
Power dissipation: 1.98W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6005LPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.7A; Idm: 500A; 2.6W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47.1nC
On-state resistance: 6.5mΩ
Power dissipation: 2.6W
Drain current: 14.7A
Gate-source voltage: ±20V
Pulsed drain current: 500A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LK3-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 71A; Idm: 350A; 3.1W; TO252
Case: TO252
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 3.1W
Drain current: 71A
Gate-source voltage: ±20V
Pulsed drain current: 350A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006LSS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11.7A; Idm: 110A; 2.08W; SO8
Case: SO8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 34.9nC
On-state resistance: 10mΩ
Power dissipation: 2.08W
Drain current: 11.7A
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6006SPS-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 390A; 2.45W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 27.9nC
On-state resistance: 6.2mΩ
Power dissipation: 2.45W
Drain current: 13A
Gate-source voltage: ±20V
Pulsed drain current: 390A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6007LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 2.2W; PowerDI®3333-8
Case: PowerDI®3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 70A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
на замовлення 1871 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.50 грн |
8+ | 53.68 грн |
10+ | 49.88 грн |
22+ | 43.07 грн |
50+ | 42.12 грн |
60+ | 40.77 грн |
100+ | 39.19 грн |
DMT6007LFGQ-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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DMT6007LFGQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 41.3nC
On-state resistance: 8.5mΩ
Power dissipation: 2.2W
Drain current: 12A
Gate-source voltage: ±20V
Pulsed drain current: 80A
Drain-source voltage: 60V
Application: automotive industry
Kind of channel: enhancement
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DMT6008LFG-13 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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DMT6008LFG-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 80A; 2.2W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.4nC
On-state resistance: 11.5mΩ
Power dissipation: 2.2W
Drain current: 11A
Gate-source voltage: ±12V
Pulsed drain current: 80A
Drain-source voltage: 60V
Kind of channel: enhancement
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SMBJ30A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷38.3V; 12.4A; unidirectional; SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Leakage current: 5µA
Features of semiconductor devices: glass passivated
на замовлення 4750 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.69 грн |
23+ | 17.26 грн |
100+ | 9.42 грн |
165+ | 5.62 грн |
453+ | 5.30 грн |
AP2112K-1.2TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 1.3V
Output current: 0.6A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 1.3V
Output current: 0.6A
Number of channels: 1
Output voltage: 1.2V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
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AP2112K-2.5TRG1 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 2.5V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.6A; SOT23-5; SMD
Kind of package: reel; tape
Integrated circuit features: shutdown mode control input
Mounting: SMD
Case: SOT23-5
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Voltage drop: 0.4V
Output current: 0.6A
Number of channels: 1
Output voltage: 2.5V
Tolerance: ±1.5%
Input voltage: 2.5...6V
Kind of voltage regulator: fixed; LDO; linear
на замовлення 2985 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.49 грн |
36+ | 11.08 грн |
41+ | 9.82 грн |
48+ | 8.39 грн |
100+ | 6.81 грн |
152+ | 6.18 грн |
416+ | 5.86 грн |
SMAJ58A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 5µA
Max. forward impulse current: 4.3A
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Peak pulse power dissipation: 0.4kW
Case: SMA
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: unidirectional
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4÷71.2V; 4.3A; unidirectional; SMA; reel,tape
Features of semiconductor devices: glass passivated
Type of diode: TVS
Leakage current: 5µA
Max. forward impulse current: 4.3A
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Peak pulse power dissipation: 0.4kW
Case: SMA
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: unidirectional
на замовлення 1164 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.61 грн |
28+ | 14.41 грн |
33+ | 12.27 грн |
51+ | 7.81 грн |
100+ | 6.55 грн |
214+ | 4.35 грн |
588+ | 4.11 грн |
DMC3021LSD-13 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 7/-8.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.021/0.039Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
на замовлення 2521 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.42 грн |
11+ | 37.45 грн |
25+ | 30.64 грн |
50+ | 26.05 грн |
64+ | 14.73 грн |
175+ | 13.86 грн |
2500+ | 13.46 грн |
SMAJ6.5A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.22÷7.98V; 35.7A; unidirectional; SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 35.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.5mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2135 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.76 грн |
28+ | 14.41 грн |
33+ | 12.27 грн |
42+ | 9.54 грн |
100+ | 4.69 грн |
225+ | 4.13 грн |
619+ | 3.91 грн |
BSS127S-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70mA
Power dissipation: 0.61W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 160Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70mA
Power dissipation: 0.61W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 160Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
на замовлення 616 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.99 грн |
19+ | 21.85 грн |
22+ | 18.61 грн |
50+ | 11.95 грн |
100+ | 9.90 грн |
190+ | 4.91 грн |
520+ | 4.67 грн |
SMBJ58A-13-F |
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Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷74.6V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...74.6V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2423 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.64 грн |
38+ | 10.45 грн |
43+ | 9.34 грн |
52+ | 7.68 грн |
100+ | 6.89 грн |
142+ | 6.57 грн |
390+ | 6.18 грн |
74HCT125S14-13 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Manufacturer series: HCT
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; HCT; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Manufacturer series: HCT
Kind of package: reel; tape
на замовлення 1710 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.47 грн |
47+ | 8.55 грн |
100+ | 7.52 грн |
139+ | 6.33 грн |
TL431ASA-7 |
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Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 257 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 16.20 грн |
33+ | 12.35 грн |
37+ | 10.77 грн |
44+ | 9.18 грн |
100+ | 7.44 грн |
210+ | 4.43 грн |
PAM8902HKER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Type of integrated circuit: audio amplifier
Voltage supply range: 2.5...5.5V DC
Case: QFN16
Amplifier class: D
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 1; Amp.class: D; QFN16; 2.5÷5.5VDC
Type of integrated circuit: audio amplifier
Voltage supply range: 2.5...5.5V DC
Case: QFN16
Amplifier class: D
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.
PAM8904EGPR |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; 1.5÷5.5VDC
Type of integrated circuit: driver
Voltage supply range: 1.5...5.5V DC
Case: WQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; WQFN12; 1.5÷5.5VDC
Type of integrated circuit: driver
Voltage supply range: 1.5...5.5V DC
Case: WQFN12
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
товару немає в наявності
В кошику
од. на суму грн.
PAM8904EJER |
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Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 1.5÷5.5VDC
Type of integrated circuit: driver
Voltage supply range: 1.5...5.5V DC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Category: RTV - audio integrated circuits
Description: IC: driver; piezo sounder; UQFN16; 1.5÷5.5VDC
Type of integrated circuit: driver
Voltage supply range: 1.5...5.5V DC
Case: UQFN16
Kind of integrated circuit: piezo sounder
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
товару немає в наявності
В кошику
од. на суму грн.