Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (72924) > Сторінка 6 з 1216
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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ZTX749 | Diodes Incorporated |
Description: TRANS PNP 25V 2A E-LINEPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 160MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
на замовлення 3580 шт: термін постачання 21-31 дні (днів) |
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ZTX694B | Diodes Incorporated |
Description: TRANS NPN 120V 0.5A E-LINEPackaging: Bulk Package / Case: E-Line-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V Frequency - Transition: 130MHz Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W |
на замовлення 12680 шт: термін постачання 21-31 дні (днів) |
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ZTX692B | Diodes Incorporated |
Description: TRANS NPN 70V 1A E-LINEPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 70 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 1A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
на замовлення 15210 шт: термін постачання 21-31 дні (днів) |
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ZTX690B | Diodes Incorporated |
Description: TRANS NPN 45V 2A E-LINEPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
на замовлення 14287 шт: термін постачання 21-31 дні (днів) |
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ZTX453 | Diodes Incorporated |
Description: TRANS NPN 100V 1A E-LINEPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
на замовлення 12502 шт: термін постачання 21-31 дні (днів) |
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ZTX451 | Diodes Incorporated |
Description: TRANS NPN 60V 1A E-LINEPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 15mA, 150mA Transistor Type: NPN Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk Operating Temperature: -55°C ~ 200°C (TJ) |
на замовлення 19634 шт: термін постачання 21-31 дні (днів) |
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ZTX450 | Diodes Incorporated |
Description: TRANS NPN 45V 1A E-LINEPackaging: Bulk Package / Case: E-Line-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 150MHz Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1 W |
на замовлення 6410 шт: термін постачання 21-31 дні (днів) |
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ZTX449 | Diodes Incorporated |
Description: TRANS NPN 30V 1A E-LINE |
на замовлення 1792 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX553 | Diodes Incorporated |
Description: TRANS PNP 100V 1A E-LINECurrent - Collector (Ic) (Max): 1 A Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 100 V |
на замовлення 30806 шт: термін постачання 21-31 дні (днів) |
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ZTX551 | Diodes Incorporated |
Description: TRANS PNP 60V 1A E-LINE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX550 | Diodes Incorporated |
Description: TRANS PNP 45V 1A E-LINEPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX549 | Diodes Incorporated |
Description: TRANS PNP 30V 1A E-LINEPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 2A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
на замовлення 3095 шт: термін постачання 21-31 дні (днів) |
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ZTX601 | Diodes Incorporated |
Description: TRANS NPN DARL 160V 1A E-LINEPackaging: Bulk Package / Case: E-Line-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 250MHz Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1 W |
на замовлення 9727 шт: термін постачання 21-31 дні (днів) |
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ZTX605 | Diodes Incorporated |
Description: TRANS NPN DARL 120V 1A E-LINEPackaging: Bulk Package / Case: E-Line-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V Frequency - Transition: 150MHz Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX603 | Diodes Incorporated |
Description: TRANS NPN DARL 80V 1A E-LINEPackaging: Bulk Package / Case: E-Line-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V Frequency - Transition: 150MHz Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
на замовлення 6800 шт: термін постачання 21-31 дні (днів) |
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ZTX705 | Diodes Incorporated |
Description: TRANS PNP DARL 120V 1A E-LINEPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 160MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2mA, 2A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
на замовлення 3090 шт: термін постачання 21-31 дні (днів) |
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ZTX657 | Diodes Incorporated |
Description: TRANS NPN 300V 0.5A E-LINEPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 30MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
на замовлення 19677 шт: термін постачання 21-31 дні (днів) |
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ZTX655 | Diodes Incorporated |
Description: TRANS NPN 150V 1A E-LINE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX455 | Diodes Incorporated |
Description: TRANS NPN 140V 1A E-LINECurrent - Collector (Ic) (Max): 1 A Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 140 V Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
на замовлення 8998 шт: термін постачання 21-31 дні (днів) |
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ZTX757 | Diodes Incorporated |
Description: TRANS PNP 300V 0.5A E-LINEPackaging: Bulk Package / Case: E-Line-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V Frequency - Transition: 30MHz Supplier Device Package: E-Line (TO-92 compatible) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1 W |
на замовлення 22359 шт: термін постачання 21-31 дні (днів) |
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ZTX557 | Diodes Incorporated |
Description: TRANS PNP 300V 0.5A E-LINE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX776 | Diodes Incorporated |
Description: TRANS PNP 200V 1A E-LINE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX576 | Diodes Incorporated |
Description: TRANS PNP 200V 1A E-LINE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX755 | Diodes Incorporated |
Description: TRANS PNP 150V 1A E-LINE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX555 | Diodes Incorporated |
Description: TRANS PNP 150V 1A E-LINEPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX325 | Diodes Incorporated |
Description: RF TRANS NPN 15V 1.3GHZ E-LINE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX796A | Diodes Incorporated |
Description: TRANS PNP 200V 0.5A E-LINE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZTX795A | Diodes Incorporated |
Description: TRANS PNP 140V 0.5A E-LINEPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 140 V Current - Collector (Ic) (Max): 500 mA Part Status: Active Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
на замовлення 11476 шт: термін постачання 21-31 дні (днів) |
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ZTX792A | Diodes Incorporated |
Description: TRANS PNP 70V 2A E-LINEPackaging: Bulk Package / Case: E-Line-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 100MHz Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 1 W |
на замовлення 3787 шт: термін постачання 21-31 дні (днів) |
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ZTX790A | Diodes Incorporated |
Description: TRANS PNP 40V 2A E-LINEVce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) |
на замовлення 3325 шт: термін постачання 21-31 дні (днів) |
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ZTX849 | Diodes Incorporated |
Description: TRANS NPN 30V 5A E-LINEPower - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 5 A Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 5A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
на замовлення 6353 шт: термін постачання 21-31 дні (днів) |
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ZTX851 | Diodes Incorporated |
Description: TRANS NPN 60V 5A E-LINEPackaging: Bulk Package / Case: E-Line-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 130MHz Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.2 W |
на замовлення 8420 шт: термін постачання 21-31 дні (днів) |
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ZTX853 | Diodes Incorporated |
Description: TRANS NPN 100V 4A E-LINEPackaging: Bulk Package / Case: E-Line-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 130MHz Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.2 W |
на замовлення 22452 шт: термін постачання 21-31 дні (днів) |
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ZTX857 | Diodes Incorporated |
Description: TRANS NPN 300V 3A E-LINEPower - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: E-Line (TO-92 compatible) Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A Operating Temperature: -55°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: E-Line-3 Packaging: Bulk |
на замовлення 41080 шт: термін постачання 21-31 дні (днів) |
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ZVN2106A | Diodes Incorporated |
Description: MOSFET N-CH 60V 450MA TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V |
на замовлення 11890 шт: термін постачання 21-31 дні (днів) |
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ZVN2110A | Diodes Incorporated |
Description: MOSFET N-CH 100V 320MA TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V |
на замовлення 5227 шт: термін постачання 21-31 дні (днів) |
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BZX84C18-7 | Diodes Incorporated |
Description: DIODE ZENER 18V 300MW SOT23Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±6% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Discontinued at Digi-Key Supplier Device Package: SOT-23-3 Impedance (Max) (Zzt): 45 Ohms Voltage - Zener (Nom) (Vz): 18 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZVN3306A | Diodes Incorporated |
Description: MOSFET N-CH 60V 270MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 18 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 2.4V @ 1mA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
на замовлення 42569 шт: термін постачання 21-31 дні (днів) |
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ZVN3310A | Diodes Incorporated |
Description: MOSFET N-CH 100V 200MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 2.4V @ 1mA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
на замовлення 27515 шт: термін постачання 21-31 дні (днів) |
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ZVN4206A | Diodes Incorporated |
Description: MOSFET N-CH 60V 600MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
на замовлення 19418 шт: термін постачання 21-31 дні (днів) |
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BS170P | Diodes Incorporated |
Description: MOSFET N-CH 60V 270MA TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
на замовлення 23052 шт: термін постачання 21-31 дні (днів) |
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VN10LP | Diodes Incorporated |
Description: MOSFET N-CH 60V 270MA TO92-3Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 625mW (Ta) |
на замовлення 4563 шт: термін постачання 21-31 дні (днів) |
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ZVP2106A | Diodes Incorporated |
Description: MOSFET P-CH 60V 280MA TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-92 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V |
на замовлення 3523 шт: термін постачання 21-31 дні (днів) |
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ZVP2110A | Diodes Incorporated |
Description: MOSFET P-CH 100V 230MA TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-92 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V |
на замовлення 1715 шт: термін постачання 21-31 дні (днів) |
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ZVP3306A | Diodes Incorporated |
Description: MOSFET P-CH 60V 160MA TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-92 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V |
на замовлення 51226 шт: термін постачання 21-31 дні (днів) |
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ZVP3310A | Diodes Incorporated |
Description: MOSFET P-CH 100V 140MA TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-92 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
на замовлення 34830 шт: термін постачання 21-31 дні (днів) |
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MMBT3906-7 | Diodes Incorporated |
Description: TRANS PNP 40V 0.2A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 Grade: Automotive Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 300 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BS250P | Diodes Incorporated |
Description: MOSFET P-CH 45V 230MA E-LINEPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-92 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
на замовлення 28399 шт: термін постачання 21-31 дні (днів) |
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ZVNL110A | Diodes Incorporated |
Description: MOSFET N-CH 100V 320MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-92 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
на замовлення 14878 шт: термін постачання 21-31 дні (днів) |
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BSS138TA | Diodes Incorporated |
Description: MOSFET N-CH 50V 200MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
на замовлення 219 шт: термін постачання 21-31 дні (днів) |
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VN10LFTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 150MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 213846 шт: термін постачання 21-31 дні (днів) |
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ZVN3306FTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 150MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 18 V |
на замовлення 14451 шт: термін постачання 21-31 дні (днів) |
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ZVN3310FTA | Diodes Incorporated |
Description: MOSFET N-CH 100V 100MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V |
на замовлення 2858 шт: термін постачання 21-31 дні (днів) |
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ZVN4106FTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 200MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 391219 шт: термін постачання 21-31 дні (днів) |
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BSS84TA | Diodes Incorporated |
Description: MOSFET P-CH 50V 130MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZVP3306FTA | Diodes Incorporated |
Description: MOSFET P-CH 60V 90MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V |
на замовлення 18736 шт: термін постачання 21-31 дні (днів) |
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ZVP3310FTA | Diodes Incorporated |
Description: MOSFET P-CH 100V 75MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75mA (Ta) Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
на замовлення 7302 шт: термін постачання 21-31 дні (днів) |
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BSS138TA | Diodes Incorporated |
Description: MOSFET N-CH 50V 200MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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VN10LFTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 150MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 213000 шт: термін постачання 21-31 дні (днів) |
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ZVN3306FTA | Diodes Incorporated |
Description: MOSFET N-CH 60V 150MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 18 V |
на замовлення 13450 шт: термін постачання 21-31 дні (днів) |
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| ZTX749 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 25V 2A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS PNP 25V 2A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
на замовлення 3580 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 107.60 грн |
| 10+ | 65.22 грн |
| 100+ | 43.30 грн |
| 500+ | 31.79 грн |
| 1000+ | 28.94 грн |
| ZTX694B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 120V 0.5A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Description: TRANS NPN 120V 0.5A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 200mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
на замовлення 12680 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 103.64 грн |
| 10+ | 62.93 грн |
| 100+ | 41.81 грн |
| 500+ | 30.72 грн |
| 1000+ | 27.98 грн |
| 4000+ | 23.74 грн |
| 8000+ | 21.75 грн |
| 12000+ | 20.93 грн |
| ZTX692B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 70V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS NPN 70V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 70 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
на замовлення 15210 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 54.78 грн |
| 100+ | 38.03 грн |
| 500+ | 28.65 грн |
| 1000+ | 26.34 грн |
| 4000+ | 22.72 грн |
| 8000+ | 22.06 грн |
| ZTX690B |
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Виробник: Diodes Incorporated
Description: TRANS NPN 45V 2A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS NPN 45V 2A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
на замовлення 14287 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.10 грн |
| 10+ | 59.58 грн |
| 100+ | 39.55 грн |
| 500+ | 29.07 грн |
| 1000+ | 26.47 грн |
| 4000+ | 22.46 грн |
| 8000+ | 20.57 грн |
| 12000+ | 20.23 грн |
| ZTX453 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 100V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS NPN 100V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
на замовлення 12502 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.75 грн |
| 10+ | 37.41 грн |
| 100+ | 25.67 грн |
| 500+ | 19.07 грн |
| 1000+ | 17.41 грн |
| 4000+ | 14.81 грн |
| 8000+ | 13.58 грн |
| 12000+ | 13.39 грн |
| ZTX451 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 60V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 15mA, 150mA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Operating Temperature: -55°C ~ 200°C (TJ)
Description: TRANS NPN 60V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 15mA, 150mA
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Operating Temperature: -55°C ~ 200°C (TJ)
на замовлення 19634 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.95 грн |
| 10+ | 45.41 грн |
| 100+ | 29.64 грн |
| 500+ | 21.43 грн |
| 1000+ | 19.38 грн |
| 4000+ | 16.19 грн |
| 8000+ | 14.72 грн |
| 12000+ | 14.11 грн |
| ZTX450 | ![]() |
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Виробник: Diodes Incorporated
Description: TRANS NPN 45V 1A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Description: TRANS NPN 45V 1A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
на замовлення 6410 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.77 грн |
| 10+ | 55.92 грн |
| 100+ | 36.93 грн |
| 500+ | 27.00 грн |
| 1000+ | 24.54 грн |
| 4000+ | 20.72 грн |
| ZTX449 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 30V 1A E-LINE
Description: TRANS NPN 30V 1A E-LINE
на замовлення 1792 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ZTX553 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 100V 1A E-LINE
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Description: TRANS PNP 100V 1A E-LINE
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
на замовлення 30806 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.04 грн |
| 10+ | 40.68 грн |
| 100+ | 26.54 грн |
| 500+ | 19.19 грн |
| 1000+ | 17.35 грн |
| 4000+ | 14.50 грн |
| 8000+ | 13.18 грн |
| 12000+ | 12.63 грн |
| ZTX551 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 60V 1A E-LINE
Description: TRANS PNP 60V 1A E-LINE
товару немає в наявності
В кошику
од. на суму грн.
| ZTX550 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 45V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS PNP 45V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| ZTX549 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 30V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS PNP 30V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
на замовлення 3095 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.96 грн |
| 10+ | 36.57 грн |
| 100+ | 25.06 грн |
| 500+ | 18.61 грн |
| 1000+ | 17.00 грн |
| ZTX601 |
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Виробник: Diodes Incorporated
Description: TRANS NPN DARL 160V 1A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Description: TRANS NPN DARL 160V 1A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
на замовлення 9727 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.06 грн |
| 10+ | 62.17 грн |
| 100+ | 41.29 грн |
| 500+ | 30.32 грн |
| 1000+ | 27.60 грн |
| 4000+ | 23.40 грн |
| 8000+ | 21.43 грн |
| ZTX605 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN DARL 120V 1A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Description: TRANS NPN DARL 120V 1A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| ZTX603 |
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Виробник: Diodes Incorporated
Description: TRANS NPN DARL 80V 1A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN DARL 80V 1A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Frequency - Transition: 150MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
на замовлення 6800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.06 грн |
| 10+ | 62.17 грн |
| 100+ | 41.29 грн |
| 500+ | 30.32 грн |
| 1000+ | 27.60 грн |
| 4000+ | 23.40 грн |
| ZTX705 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP DARL 120V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS PNP DARL 120V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 1A, 5V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
на замовлення 3090 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.45 грн |
| 10+ | 54.93 грн |
| 100+ | 38.15 грн |
| 500+ | 28.71 грн |
| 1000+ | 26.39 грн |
| ZTX657 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 300V 0.5A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS NPN 300V 0.5A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
на замовлення 19677 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 83.07 грн |
| 10+ | 53.63 грн |
| 100+ | 37.24 грн |
| 500+ | 28.03 грн |
| 1000+ | 25.76 грн |
| 4000+ | 22.20 грн |
| 8000+ | 21.49 грн |
| ZTX655 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 150V 1A E-LINE
Description: TRANS NPN 150V 1A E-LINE
товару немає в наявності
В кошику
од. на суму грн.
| ZTX455 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 140V 1A E-LINE
Current - Collector (Ic) (Max): 1 A
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS NPN 140V 1A E-LINE
Current - Collector (Ic) (Max): 1 A
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
на замовлення 8998 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.96 грн |
| 10+ | 47.24 грн |
| 100+ | 32.72 грн |
| 500+ | 25.65 грн |
| 1000+ | 21.83 грн |
| 4000+ | 19.45 грн |
| 8000+ | 18.12 грн |
| ZTX757 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS PNP 300V 0.5A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Description: TRANS PNP 300V 0.5A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: E-Line (TO-92 compatible)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
на замовлення 22359 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 86.24 грн |
| 10+ | 52.11 грн |
| 100+ | 34.31 грн |
| 500+ | 25.00 грн |
| 1000+ | 22.68 грн |
| 4000+ | 19.09 грн |
| 8000+ | 17.42 грн |
| 12000+ | 16.73 грн |
| ZTX557 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 300V 0.5A E-LINE
Description: TRANS PNP 300V 0.5A E-LINE
товару немає в наявності
В кошику
од. на суму грн.
| ZTX776 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 200V 1A E-LINE
Description: TRANS PNP 200V 1A E-LINE
товару немає в наявності
В кошику
од. на суму грн.
| ZTX576 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 200V 1A E-LINE
Description: TRANS PNP 200V 1A E-LINE
товару немає в наявності
В кошику
од. на суму грн.
| ZTX755 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 150V 1A E-LINE
Description: TRANS PNP 150V 1A E-LINE
товару немає в наявності
В кошику
од. на суму грн.
| ZTX555 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 150V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS PNP 150V 1A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 300mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| ZTX325 |
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Виробник: Diodes Incorporated
Description: RF TRANS NPN 15V 1.3GHZ E-LINE
Description: RF TRANS NPN 15V 1.3GHZ E-LINE
товару немає в наявності
В кошику
од. на суму грн.
| ZTX796A |
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Виробник: Diodes Incorporated
Description: TRANS PNP 200V 0.5A E-LINE
Description: TRANS PNP 200V 0.5A E-LINE
товару немає в наявності
В кошику
од. на суму грн.
| ZTX795A |
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Виробник: Diodes Incorporated
Description: TRANS PNP 140V 0.5A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS PNP 140V 0.5A E-LINE
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
на замовлення 11476 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.90 грн |
| 10+ | 64.15 грн |
| 100+ | 44.78 грн |
| 500+ | 33.90 грн |
| 1000+ | 31.23 грн |
| 4000+ | 27.32 грн |
| ZTX792A |
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Виробник: Diodes Incorporated
Description: TRANS PNP 70V 2A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Description: TRANS PNP 70V 2A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
на замовлення 3787 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.97 грн |
| 10+ | 67.04 грн |
| 100+ | 44.85 грн |
| 500+ | 33.14 грн |
| 1000+ | 30.26 грн |
| ZTX790A |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 2A E-LINE
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Description: TRANS PNP 40V 2A E-LINE
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
на замовлення 3325 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.52 грн |
| 10+ | 62.62 грн |
| 100+ | 43.72 грн |
| 500+ | 33.09 грн |
| 1000+ | 30.49 грн |
| ZTX849 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 30V 5A E-LINE
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 5A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS NPN 30V 5A E-LINE
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 5A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
на замовлення 6353 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.18 грн |
| 10+ | 66.43 грн |
| 100+ | 44.35 грн |
| 500+ | 32.73 грн |
| 1000+ | 29.87 грн |
| 4000+ | 25.44 грн |
| ZTX851 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 60V 5A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.2 W
Description: TRANS NPN 60V 5A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.2 W
на замовлення 8420 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 107.60 грн |
| 10+ | 65.37 грн |
| 100+ | 43.64 грн |
| 500+ | 32.21 грн |
| 1000+ | 29.40 грн |
| 4000+ | 25.04 грн |
| 8000+ | 23.00 грн |
| ZTX853 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 100V 4A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.2 W
Description: TRANS NPN 100V 4A E-LINE
Packaging: Bulk
Package / Case: E-Line-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.2 W
на замовлення 22452 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 109.97 грн |
| 10+ | 66.59 грн |
| 100+ | 44.49 грн |
| 500+ | 32.84 грн |
| 1000+ | 29.97 грн |
| 4000+ | 25.53 грн |
| 8000+ | 23.45 грн |
| ZTX857 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 300V 3A E-LINE
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
Description: TRANS NPN 300V 3A E-LINE
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: E-Line (TO-92 compatible)
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: E-Line-3
Packaging: Bulk
на замовлення 41080 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 128.96 грн |
| 10+ | 79.08 грн |
| 100+ | 53.04 грн |
| 500+ | 39.32 грн |
| 1000+ | 35.95 грн |
| 4000+ | 30.74 грн |
| 8000+ | 28.79 грн |
| ZVN2106A |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 450MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V
Description: MOSFET N-CH 60V 450MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 18 V
на замовлення 11890 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.37 грн |
| 10+ | 44.80 грн |
| 100+ | 29.37 грн |
| 500+ | 21.35 грн |
| 1000+ | 19.35 грн |
| 4000+ | 16.24 грн |
| 8000+ | 14.81 грн |
| ZVN2110A |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 320MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Description: MOSFET N-CH 100V 320MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
на замовлення 5227 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.37 грн |
| 10+ | 44.80 грн |
| 100+ | 29.37 грн |
| 500+ | 21.35 грн |
| 1000+ | 19.35 грн |
| 4000+ | 16.24 грн |
| BZX84C18-7 |
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Виробник: Diodes Incorporated
Description: DIODE ZENER 18V 300MW SOT23
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Description: DIODE ZENER 18V 300MW SOT23
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±6%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Discontinued at Digi-Key
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
товару немає в наявності
В кошику
од. на суму грн.
| ZVN3306A |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 270MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 18 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET N-CH 60V 270MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 18 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
на замовлення 42569 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.55 грн |
| 10+ | 47.46 грн |
| 100+ | 31.21 грн |
| 500+ | 22.74 грн |
| 1000+ | 20.63 грн |
| 4000+ | 17.24 грн |
| 8000+ | 15.84 грн |
| 12000+ | 15.47 грн |
| ZVN3310A |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 200MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET N-CH 100V 200MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
на замовлення 27515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 25.60 грн |
| 100+ | 23.43 грн |
| 500+ | 21.76 грн |
| 1000+ | 20.94 грн |
| 4000+ | 20.55 грн |
| 8000+ | 18.79 грн |
| 12000+ | 18.64 грн |
| ZVN4206A |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 600MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET N-CH 60V 600MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
на замовлення 19418 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.25 грн |
| 10+ | 46.55 грн |
| 100+ | 26.92 грн |
| 500+ | 22.26 грн |
| 1000+ | 20.19 грн |
| 4000+ | 16.98 грн |
| 8000+ | 15.49 грн |
| BS170P |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 270MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Description: MOSFET N-CH 60V 270MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
на замовлення 23052 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.31 грн |
| 10+ | 58.89 грн |
| 100+ | 38.99 грн |
| 500+ | 28.56 грн |
| 1000+ | 25.98 грн |
| 4000+ | 21.97 грн |
| 8000+ | 20.10 грн |
| 12000+ | 19.33 грн |
| VN10LP |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 270MA TO92-3
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
Description: MOSFET N-CH 60V 270MA TO92-3
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 625mW (Ta)
на замовлення 4563 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.73 грн |
| 15+ | 21.71 грн |
| 100+ | 20.03 грн |
| 500+ | 17.74 грн |
| 1000+ | 17.22 грн |
| 4000+ | 17.00 грн |
| ZVP2106A |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 280MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
Description: MOSFET P-CH 60V 280MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
на замовлення 3523 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.63 грн |
| 10+ | 74.89 грн |
| 100+ | 50.18 грн |
| 500+ | 37.12 грн |
| 1000+ | 33.91 грн |
| ZVP2110A |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 230MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET P-CH 100V 230MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 375mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 1715 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.85 грн |
| 10+ | 62.70 грн |
| 100+ | 41.61 грн |
| 500+ | 30.56 грн |
| 1000+ | 27.82 грн |
| ZVP3306A |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 160MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V
Description: MOSFET P-CH 60V 160MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V
на замовлення 51226 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.79 грн |
| 10+ | 50.21 грн |
| 100+ | 33.10 грн |
| 500+ | 24.15 грн |
| 1000+ | 21.92 грн |
| 4000+ | 18.47 грн |
| 8000+ | 17.62 грн |
| ZVP3310A |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 140MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET P-CH 100V 140MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 34830 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.79 грн |
| 10+ | 43.88 грн |
| 100+ | 28.75 грн |
| 500+ | 20.88 грн |
| 1000+ | 18.91 грн |
| 4000+ | 15.87 грн |
| 8000+ | 14.46 грн |
| 12000+ | 13.90 грн |
| MMBT3906-7 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Qualification: AEC-Q101
Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BS250P |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 45V 230MA E-LINE
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Description: MOSFET P-CH 45V 230MA E-LINE
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
на замовлення 28399 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 102.85 грн |
| 10+ | 62.40 грн |
| 100+ | 41.57 грн |
| 500+ | 30.61 грн |
| 1000+ | 27.91 грн |
| 4000+ | 25.45 грн |
| ZVNL110A |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 320MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: MOSFET N-CH 100V 320MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
на замовлення 14878 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 41.14 грн |
| 10+ | 35.20 грн |
| 100+ | 29.58 грн |
| 500+ | 22.74 грн |
| 1000+ | 20.63 грн |
| 4000+ | 17.36 грн |
| 8000+ | 16.14 грн |
| BSS138TA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
на замовлення 219 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.11 грн |
| 20+ | 15.62 грн |
| 100+ | 9.81 грн |
| VN10LFTA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 150MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 150MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 213846 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.96 грн |
| 10+ | 35.05 грн |
| 100+ | 21.87 грн |
| 500+ | 16.63 грн |
| 1000+ | 14.98 грн |
| ZVN3306FTA |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 150MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 18 V
Description: MOSFET N-CH 60V 150MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 18 V
на замовлення 14451 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.89 грн |
| 12+ | 27.66 грн |
| 100+ | 17.74 грн |
| 500+ | 12.64 грн |
| 1000+ | 11.35 грн |
| ZVN3310FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Description: MOSFET N-CH 100V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
на замовлення 2858 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.04 грн |
| 10+ | 41.14 грн |
| 100+ | 26.86 грн |
| 500+ | 19.44 грн |
| 1000+ | 17.58 грн |
| ZVN4106FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 200MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 200MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 391219 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 62.50 грн |
| 10+ | 37.79 грн |
| 100+ | 23.23 грн |
| 500+ | 17.65 грн |
| 1000+ | 15.93 грн |
| BSS84TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 50V 130MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 50V 130MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| ZVP3306FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 90MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V
Description: MOSFET P-CH 60V 90MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 18 V
на замовлення 18736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.96 грн |
| 10+ | 34.21 грн |
| 100+ | 22.09 грн |
| 500+ | 15.83 грн |
| 1000+ | 14.25 грн |
| ZVP3310FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 75MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET P-CH 100V 75MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
на замовлення 7302 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.43 грн |
| 10+ | 31.08 грн |
| 100+ | 20.06 грн |
| 500+ | 14.35 грн |
| 1000+ | 12.91 грн |
| BSS138TA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| VN10LFTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 150MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 150MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 330mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 213000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.37 грн |
| 6000+ | 12.59 грн |
| 9000+ | 12.36 грн |
| 15000+ | 11.39 грн |
| ZVN3306FTA |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 18 V
Description: MOSFET N-CH 60V 150MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 330mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 18 V
на замовлення 13450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 10.41 грн |
| 6000+ | 9.17 грн |
| 9000+ | 8.73 грн |





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