| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EPC2108ENGRT | EPC |
Description: TRANS GAN 3N-CH BUMPED DIE |
на замовлення 4840 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC2110 | EPC |
Description: MOSFET 2N-CH 120V 3.4A DIEPackaging: Tape & Reel (TR) Package / Case: Die Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 700µA Supplier Device Package: Die |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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EPC2110 | EPC |
Description: MOSFET 2N-CH 120V 3.4A DIEPackaging: Cut Tape (CT) Package / Case: Die Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 700µA Supplier Device Package: Die |
на замовлення 636 шт: термін постачання 21-31 дні (днів) |
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EPC2110 | EPC |
GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EPC2110ENGRT | EPC |
Description: MOSFET 2N-CH 120V 3.4A DIE |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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EPC2111 | EPC |
Description: MOSFET 2N-CH 30V 16A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA Supplier Device Package: Die Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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EPC2111 | EPC |
Description: MOSFET 2N-CH 30V 16A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA Supplier Device Package: Die Part Status: Active |
на замовлення 9012 шт: термін постачання 21-31 дні (днів) |
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EPC2111ENGRT | EPC |
Description: GAN TRANS ASYMMETRICAL HALF BRID |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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EPC2111ENGRT | EPC |
Description: GAN TRANS ASYMMETRICAL HALF BRID |
на замовлення 6776 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC2112ENGRT | EPC |
Description: IC LOW SIDE DRIVER 10A 10BGA Packaging: Tape & Reel (TR) Package / Case: 10-VFBGA Mounting Type: Surface Mount Interface: On/Off Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 32mOhm Applications: DC-DC Converters Current - Output / Channel: 10A Current - Peak Output: 40A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 160V (Max) Supplier Device Package: 10-BGA (2.9x1.1) Load Type: Inductive |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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EPC2115ENGRT | EPC |
Description: IC LOW SIDE DRIVER 5A 10BGAPackaging: Cut Tape (CT) Package / Case: 10-VFBGA Mounting Type: Surface Mount Interface: On/Off Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 70mOhm Applications: DC-DC Converters Current - Output / Channel: 5A Current - Peak Output: 18A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 120V (Max) Supplier Device Package: 10-BGA (2.9x1.1) Load Type: Inductive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EPC2115ENGRT | EPC |
Description: IC LOW SIDE DRIVER 5A 10BGAPackaging: Tape & Reel (TR) Package / Case: 10-VFBGA Mounting Type: Surface Mount Interface: On/Off Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 70mOhm Applications: DC-DC Converters Current - Output / Channel: 5A Current - Peak Output: 18A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 120V (Max) Supplier Device Package: 10-BGA (2.9x1.1) Load Type: Inductive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EPC2121 | EPC |
Description: IC BIDIRECT SW 100V .045OHM 4BGAPackaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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EPC2121 | EPC |
Description: IC BIDIRECT SW 100V .045OHM 4BGAPackaging: Cut Tape (CT) |
на замовлення 4287 шт: термін постачання 21-31 дні (днів) |
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EPC2121 | EPC |
Power Switch ICs - Power Distribution EPC Bi-directional eGaN Power Switch,100 V, 45 milliohm at 5 V, BGA 0.9 x 0.95 |
на замовлення 1921 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC2152 | EPC |
Gate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC2152 | EPC |
Description: IC HALF BRIDGE DRVR 12.5A 12LGAFeatures: Bootstrap Circuit Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 11V ~ 13V Rds On (Typ): 10mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Voltage - Load: 0V ~ 60V Supplier Device Package: Die Fault Protection: Over Voltage, UVLO Load Type: Inductive, Capacitive |
на замовлення 6925 шт: термін постачання 21-31 дні (днів) |
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EPC2152 | EPC |
Description: IC HALF BRIDGE DRVR 12.5A 12LGAFeatures: Bootstrap Circuit Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 11V ~ 13V Rds On (Typ): 10mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Voltage - Load: 0V ~ 60V Supplier Device Package: Die Fault Protection: Over Voltage, UVLO Load Type: Inductive, Capacitive |
на замовлення 6942 шт: термін постачання 21-31 дні (днів) |
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EPC2152ENGRT | EPC |
Description: IC HALF BRIDGE DRVR 12.5A 12LGAFeatures: Bootstrap Circuit Packaging: Tape & Reel (TR) Package / Case: 12-WFLGA Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 11V ~ 13V Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 12.5A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 11V ~ 13V Supplier Device Package: 12-LGA (3.85x2.59) Fault Protection: UVLO Load Type: Inductive, Capacitive |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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EPC2152ENGRT | EPC |
Description: IC HALF BRIDGE DRVR 12.5A 12LGAFeatures: Bootstrap Circuit Packaging: Cut Tape (CT) Package / Case: 12-WFLGA Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 11V ~ 13V Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 12.5A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 11V ~ 13V Supplier Device Package: 12-LGA (3.85x2.59) Fault Protection: UVLO Load Type: Inductive, Capacitive |
на замовлення 22977 шт: термін постачання 21-31 дні (днів) |
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EPC21601 | EPC |
Description: IC LASER DRVER 40V 10A 3.3VLOGICPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Type: Laser Diode Driver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 30V Supplier Device Package: Die Number of Channels: 1 Current - Supply: 50 mA |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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EPC21601 | EPC |
Description: IC LASER DRVER 40V 10A 3.3VLOGICPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Type: Laser Diode Driver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 30V Supplier Device Package: Die Number of Channels: 1 Current - Supply: 50 mA |
на замовлення 9200 шт: термін постачання 21-31 дні (днів) |
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EPC21601 | EPC |
Laser Drivers IC LASER DRVR 40V 10A 3.3VLOGIC |
на замовлення 1886 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC21601ENGRT | EPC |
Description: IC LASER DRVR 40V 10A 3.3V 6BMPDCurrent - Supply: 50 mA Number of Channels: 1 Voltage - Supply: 1.6V ~ 5.5V Type: Laser Diode Driver Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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EPC21603 | EPC |
Laser Drivers IC LASER DRVR 40V 15A LVDS LOGIC |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC21603 | EPC |
Description: IC LASER DRVR 40V 10A LVDSLOGICCurrent - Supply: 47 mA Number of Channels: 1 Part Status: Active Supplier Device Package: Die Voltage - Supply: 10V ~ 30V Operating Temperature: -40°C ~ 150°C (TJ) Type: Laser Diode Driver Mounting Type: Surface Mount Package / Case: Die Packaging: Tape & Reel (TR) |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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EPC21603 | EPC |
Description: IC LASER DRVR 40V 10A LVDSLOGICCurrent - Supply: 47 mA Number of Channels: 1 Part Status: Active Supplier Device Package: Die Voltage - Supply: 10V ~ 30V Operating Temperature: -40°C ~ 150°C (TJ) Type: Laser Diode Driver Mounting Type: Surface Mount Package / Case: Die Packaging: Cut Tape (CT) |
на замовлення 7512 шт: термін постачання 21-31 дні (днів) |
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EPC21603ENGRT | EPC |
Description: IC LASER DRVR 40V 10A LVDS 6BMPDPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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EPC21603ENGRT | EPC |
Description: IC LASER DRVR 40V 10A LVDS 6BMPDPackaging: Cut Tape (CT) |
на замовлення 2185 шт: термін постачання 21-31 дні (днів) |
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EPC21701 | EPC |
Laser Drivers IC LASER DRVR 80V 15A |
на замовлення 1650 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC21701 | EPC |
Description: IC GAN LASER DRVR 80VPackaging: Tape & Reel (TR) Type: Laser Diode Driver Voltage - Supply: 80V Part Status: Active Number of Channels: 1 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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EPC21701 | EPC |
Description: IC GAN LASER DRVR 80VPackaging: Cut Tape (CT) Type: Laser Diode Driver Voltage - Supply: 80V Part Status: Active Number of Channels: 1 |
на замовлення 31698 шт: термін постачання 21-31 дні (днів) |
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| EPC21702ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 30A Packaging: Cut Tape (CT) Part Status: Active |
на замовлення 2290 шт: термін постачання 21-31 дні (днів) |
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| EPC21702ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 30A Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| EPC21704ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 75APackaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| EPC21704ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 75APackaging: Cut Tape (CT) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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EPC2202 | EPC |
Description: GANFET N-CH 80V 18A DIE |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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EPC2202 | EPC |
Description: GANFET N-CH 80V 18A DIE |
на замовлення 34160 шт: термін постачання 21-31 дні (днів) |
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EPC2203 | EPC |
Description: GANFET N-CH 80V 1.7A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.75V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9788 шт: термін постачання 21-31 дні (днів) |
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EPC2203 | EPC |
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9 |
на замовлення 1183 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC2203 | EPC |
Description: GANFET N-CH 80V 1.7A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.75V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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EPC2204 | EPC |
Description: TRANS GAN 100V DIE 5.6MOHMPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V |
на замовлення 104767 шт: термін постачання 21-31 дні (днів) |
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EPC2204 | EPC |
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5 |
на замовлення 14783 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC2204 | EPC |
Description: TRANS GAN 100V DIE 5.6MOHMPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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| EPC2204 | EPC |
N-Channel 100 V 29A (Ta) Surface Mount Die Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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EPC2204A | EPC |
Description: TRANS GAN 80V .006OHM AECQ101Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 20188 шт: термін постачання 21-31 дні (днів) |
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EPC2204A | EPC |
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5 |
на замовлення 331 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC2204A | EPC |
Description: TRANS GAN 80V .006OHM AECQ101Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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EPC2206 | EPC |
Description: GANFET N-CH 80V 90A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40 Qualification: AEC-Q101 |
на замовлення 383859 шт: термін постачання 21-31 дні (днів) |
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EPC2206 | EPC |
Description: GANFET N-CH 80V 90A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40 Qualification: AEC-Q101 |
на замовлення 383500 шт: термін постачання 21-31 дні (днів) |
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EPC2207 | EPC |
Description: TRANS GAN 200V DIE .022OHMPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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EPC2207 | EPC |
GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0 |
на замовлення 8997 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC2207 | EPC |
Description: TRANS GAN 200V DIE .022OHMPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
на замовлення 21366 шт: термін постачання 21-31 дні (днів) |
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EPC2212 | EPC |
Description: GANFET N-CH 100V 18A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Qualification: AEC-Q101 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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EPC2212 | EPC |
Description: GANFET N-CH 100V 18A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 80907 шт: термін постачання 21-31 дні (днів) |
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EPC2212 | EPC |
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на замовлення 2489 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC2214 | EPC |
Description: GANFET N-CH 80V 10A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 27500 шт: термін постачання 21-31 дні (днів) |
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EPC2214 | EPC |
Description: GANFET N-CH 80V 10A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 29150 шт: термін постачання 21-31 дні (днів) |
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EPC2214 | EPC |
GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35 |
на замовлення 6995 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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EPC2215 | EPC |
Description: GAN TRANS 200V 8MOHM BUMPED DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 6mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
на замовлення 87500 шт: термін постачання 21-31 дні (днів) |
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| EPC2108ENGRT |
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Виробник: EPC
Description: TRANS GAN 3N-CH BUMPED DIE
Description: TRANS GAN 3N-CH BUMPED DIE
на замовлення 4840 шт:
термін постачання 21-31 дні (днів)
| EPC2110 |
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Виробник: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| EPC2110 |
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Виробник: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
Description: MOSFET 2N-CH 120V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 700µA
Supplier Device Package: Die
на замовлення 636 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.36 грн |
| 10+ | 146.88 грн |
| 50+ | 112.87 грн |
| 100+ | 95.64 грн |
| 500+ | 77.59 грн |
| EPC2110 |
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Виробник: EPC
GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
товару немає в наявності
В кошику
од. на суму грн.
| EPC2110ENGRT |
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Виробник: EPC
Description: MOSFET 2N-CH 120V 3.4A DIE
Description: MOSFET 2N-CH 120V 3.4A DIE
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| EPC2111 |
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Виробник: EPC
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 138.38 грн |
| EPC2111 |
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Виробник: EPC
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
Description: MOSFET 2N-CH 30V 16A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 595pF @ 15V
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA, 2.5V @ 5mA
Supplier Device Package: Die
Part Status: Active
на замовлення 9012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 394.26 грн |
| 10+ | 253.00 грн |
| 50+ | 198.60 грн |
| 100+ | 169.94 грн |
| 500+ | 141.16 грн |
| EPC2111ENGRT |
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Виробник: EPC
Description: GAN TRANS ASYMMETRICAL HALF BRID
Description: GAN TRANS ASYMMETRICAL HALF BRID
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| EPC2111ENGRT |
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Виробник: EPC
Description: GAN TRANS ASYMMETRICAL HALF BRID
Description: GAN TRANS ASYMMETRICAL HALF BRID
на замовлення 6776 шт:
термін постачання 21-31 дні (днів)
| EPC2112ENGRT |
Виробник: EPC
Description: IC LOW SIDE DRIVER 10A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 32mOhm
Applications: DC-DC Converters
Current - Output / Channel: 10A
Current - Peak Output: 40A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 160V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Description: IC LOW SIDE DRIVER 10A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 32mOhm
Applications: DC-DC Converters
Current - Output / Channel: 10A
Current - Peak Output: 40A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 160V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| EPC2115ENGRT |
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Виробник: EPC
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Cut Tape (CT)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Cut Tape (CT)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
товару немає в наявності
В кошику
од. на суму грн.
| EPC2115ENGRT |
![]() |
Виробник: EPC
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
Description: IC LOW SIDE DRIVER 5A 10BGA
Packaging: Tape & Reel (TR)
Package / Case: 10-VFBGA
Mounting Type: Surface Mount
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 70mOhm
Applications: DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 18A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 120V (Max)
Supplier Device Package: 10-BGA (2.9x1.1)
Load Type: Inductive
товару немає в наявності
В кошику
од. на суму грн.
| EPC2121 |
![]() |
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 41.71 грн |
| EPC2121 |
![]() |
на замовлення 4287 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.44 грн |
| 10+ | 60.01 грн |
| 25+ | 54.31 грн |
| 100+ | 45.06 грн |
| 250+ | 42.26 грн |
| 500+ | 40.56 грн |
| 1000+ | 39.15 грн |
| EPC2121 |
![]() |
Виробник: EPC
Power Switch ICs - Power Distribution EPC Bi-directional eGaN Power Switch,100 V, 45 milliohm at 5 V, BGA 0.9 x 0.95
Power Switch ICs - Power Distribution EPC Bi-directional eGaN Power Switch,100 V, 45 milliohm at 5 V, BGA 0.9 x 0.95
на замовлення 1921 шт:
термін постачання 21-30 дні (днів)
| EPC2152 |
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Виробник: EPC
Gate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage
Gate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
| EPC2152 |
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Виробник: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
на замовлення 6925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 385.50 грн |
| 1000+ | 362.46 грн |
| 1500+ | 358.07 грн |
| EPC2152 |
![]() |
Виробник: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
на замовлення 6942 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 628.62 грн |
| 10+ | 470.38 грн |
| 25+ | 436.63 грн |
| 100+ | 374.96 грн |
| 250+ | 367.62 грн |
| EPC2152ENGRT |
![]() |
Виробник: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 349.75 грн |
| EPC2152ENGRT |
![]() |
Виробник: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
на замовлення 22977 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 752.46 грн |
| 10+ | 493.55 грн |
| 25+ | 433.19 грн |
| 100+ | 342.49 грн |
| 250+ | 316.07 грн |
| EPC21601 |
![]() |
Виробник: EPC
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 106.31 грн |
| 5000+ | 100.35 грн |
| EPC21601 |
![]() |
Виробник: EPC
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
на замовлення 9200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.44 грн |
| 10+ | 144.84 грн |
| 25+ | 132.66 грн |
| 100+ | 111.86 грн |
| 250+ | 105.84 грн |
| 500+ | 103.91 грн |
| EPC21601 |
![]() |
Виробник: EPC
Laser Drivers IC LASER DRVR 40V 10A 3.3VLOGIC
Laser Drivers IC LASER DRVR 40V 10A 3.3VLOGIC
на замовлення 1886 шт:
термін постачання 21-30 дні (днів)
| EPC21601ENGRT |
![]() |
Виробник: EPC
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Current - Supply: 50 mA
Number of Channels: 1
Voltage - Supply: 1.6V ~ 5.5V
Type: Laser Diode Driver
Packaging: Tape & Reel (TR)
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Current - Supply: 50 mA
Number of Channels: 1
Voltage - Supply: 1.6V ~ 5.5V
Type: Laser Diode Driver
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| EPC21603 |
![]() |
Виробник: EPC
Laser Drivers IC LASER DRVR 40V 15A LVDS LOGIC
Laser Drivers IC LASER DRVR 40V 15A LVDS LOGIC
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
| EPC21603 |
![]() |
Виробник: EPC
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Current - Supply: 47 mA
Number of Channels: 1
Part Status: Active
Supplier Device Package: Die
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Current - Supply: 47 mA
Number of Channels: 1
Part Status: Active
Supplier Device Package: Die
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 108.58 грн |
| 5000+ | 102.49 грн |
| EPC21603 |
![]() |
Виробник: EPC
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Current - Supply: 47 mA
Number of Channels: 1
Part Status: Active
Supplier Device Package: Die
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Current - Supply: 47 mA
Number of Channels: 1
Part Status: Active
Supplier Device Package: Die
Voltage - Supply: 10V ~ 30V
Operating Temperature: -40°C ~ 150°C (TJ)
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
на замовлення 7512 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.36 грн |
| 10+ | 147.94 грн |
| 25+ | 135.47 грн |
| 100+ | 114.25 грн |
| 250+ | 108.10 грн |
| 500+ | 106.14 грн |
| EPC21603ENGRT |
![]() |
на замовлення 2185 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.36 грн |
| 10+ | 147.94 грн |
| 25+ | 135.47 грн |
| 100+ | 114.25 грн |
| 250+ | 108.10 грн |
| 500+ | 106.14 грн |
| EPC21701 |
![]() |
Виробник: EPC
Laser Drivers IC LASER DRVR 80V 15A
Laser Drivers IC LASER DRVR 80V 15A
на замовлення 1650 шт:
термін постачання 21-30 дні (днів)
| EPC21701 |
![]() |
Виробник: EPC
Description: IC GAN LASER DRVR 80V
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
Description: IC GAN LASER DRVR 80V
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 130.37 грн |
| 5000+ | 123.12 грн |
| EPC21701 |
![]() |
Виробник: EPC
Description: IC GAN LASER DRVR 80V
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
Description: IC GAN LASER DRVR 80V
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
на замовлення 31698 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 230.44 грн |
| 10+ | 166.35 грн |
| 25+ | 152.53 грн |
| 100+ | 128.93 грн |
| 250+ | 122.15 грн |
| 500+ | 120.61 грн |
| EPC21702ENGRT |
на замовлення 2290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 309.61 грн |
| 10+ | 268.02 грн |
| 25+ | 253.37 грн |
| 100+ | 206.07 грн |
| 250+ | 195.50 грн |
| 500+ | 175.42 грн |
| 1000+ | 145.52 грн |
| EPC2202 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 18A DIE
Description: GANFET N-CH 80V 18A DIE
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 90.51 грн |
| 7500+ | 84.97 грн |
| EPC2202 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 18A DIE
Description: GANFET N-CH 80V 18A DIE
на замовлення 34160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 282.17 грн |
| 10+ | 178.43 грн |
| 50+ | 138.10 грн |
| 100+ | 117.41 грн |
| 500+ | 97.61 грн |
| EPC2203 |
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Виробник: EPC
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9788 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.65 грн |
| 10+ | 68.91 грн |
| 50+ | 51.45 грн |
| 100+ | 43.00 грн |
| 500+ | 33.70 грн |
| EPC2203 |
![]() |
Виробник: EPC
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
на замовлення 1183 шт:
термін постачання 21-30 дні (днів)
| EPC2203 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 30.40 грн |
| 7500+ | 26.06 грн |
| EPC2204 |
![]() |
Виробник: EPC
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
на замовлення 104767 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 245.33 грн |
| 10+ | 153.90 грн |
| 50+ | 118.30 грн |
| 100+ | 100.25 грн |
| 500+ | 81.37 грн |
| EPC2204 |
![]() |
Виробник: EPC
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
на замовлення 14783 шт:
термін постачання 21-30 дні (днів)
| EPC2204 |
![]() |
Виробник: EPC
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 76.06 грн |
| 7500+ | 69.35 грн |
| EPC2204 |
![]() |
Виробник: EPC
N-Channel 100 V 29A (Ta) Surface Mount Die Транзистори
N-Channel 100 V 29A (Ta) Surface Mount Die Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| EPC2204A |
![]() |
Виробник: EPC
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20188 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 281.39 грн |
| 10+ | 177.07 грн |
| 50+ | 136.83 грн |
| 100+ | 116.24 грн |
| 500+ | 95.59 грн |
| EPC2204A |
![]() |
Виробник: EPC
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
на замовлення 331 шт:
термін постачання 21-30 дні (днів)
| EPC2204A |
![]() |
Виробник: EPC
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 89.26 грн |
| 7500+ | 83.22 грн |
| EPC2206 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
на замовлення 383859 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 403.66 грн |
| 10+ | 258.89 грн |
| 50+ | 203.10 грн |
| 100+ | 173.74 грн |
| EPC2206 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101
на замовлення 383500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 173.75 грн |
| EPC2207 |
![]() |
Виробник: EPC
Description: TRANS GAN 200V DIE .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: TRANS GAN 200V DIE .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 70.98 грн |
| 7500+ | 64.62 грн |
| EPC2207 |
![]() |
Виробник: EPC
GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
на замовлення 8997 шт:
термін постачання 21-30 дні (днів)
| EPC2207 |
![]() |
Виробник: EPC
Description: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 21366 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.66 грн |
| 10+ | 143.86 грн |
| 50+ | 110.52 грн |
| 100+ | 93.64 грн |
| 500+ | 75.97 грн |
| EPC2212 |
![]() |
Виробник: EPC
Description: GANFET N-CH 100V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
Description: GANFET N-CH 100V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 96.34 грн |
| 7500+ | 90.75 грн |
| EPC2212 |
![]() |
Виробник: EPC
Description: GANFET N-CH 100V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 100V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
на замовлення 80907 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 299.42 грн |
| 10+ | 189.30 грн |
| 50+ | 146.65 грн |
| 100+ | 124.75 грн |
| 500+ | 104.25 грн |
| EPC2212 |
![]() |
Виробник: EPC
на замовлення 2489 шт:
термін постачання 21-30 дні (днів)
| EPC2214 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
Description: GANFET N-CH 80V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 56.01 грн |
| 7500+ | 48.80 грн |
| EPC2214 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
Description: GANFET N-CH 80V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101
на замовлення 29150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.68 грн |
| 10+ | 117.82 грн |
| 50+ | 89.61 грн |
| 100+ | 75.58 грн |
| 500+ | 60.63 грн |
| EPC2214 |
![]() |
Виробник: EPC
GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
на замовлення 6995 шт:
термін постачання 21-30 дні (днів)
| EPC2215 |
![]() |
Виробник: EPC
Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 87500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 176.06 грн |




































