| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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EPC2152 | EPC |
Gate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage |
на замовлення 2379 шт: термін постачання 21-30 дні (днів) |
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EPC2152 | EPC |
Description: IC HALF BRIDGE DRVR 12.5A 12LGAFeatures: Bootstrap Circuit Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 11V ~ 13V Rds On (Typ): 10mOhm LS + HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 15A Voltage - Load: 0V ~ 60V Supplier Device Package: Die Fault Protection: Over Voltage, UVLO Load Type: Inductive, Capacitive |
на замовлення 8349 шт: термін постачання 21-31 дні (днів) |
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EPC2152ENGRT | EPC |
Description: IC HALF BRIDGE DRVR 12.5A 12LGAPackaging: Tape & Reel (TR) Features: Bootstrap Circuit Package / Case: 12-WFLGA Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 11V ~ 13V Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 12.5A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 11V ~ 13V Supplier Device Package: 12-LGA (3.85x2.59) Fault Protection: UVLO Load Type: Inductive, Capacitive |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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EPC2152ENGRT | EPC |
Description: IC HALF BRIDGE DRVR 12.5A 12LGAPackaging: Cut Tape (CT) Features: Bootstrap Circuit Package / Case: 12-WFLGA Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 11V ~ 13V Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 12.5A Technology: Gallium Nitride (GaN) FETs Voltage - Load: 11V ~ 13V Supplier Device Package: 12-LGA (3.85x2.59) Fault Protection: UVLO Load Type: Inductive, Capacitive |
на замовлення 22977 шт: термін постачання 21-31 дні (днів) |
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EPC21601 | EPC |
Description: IC LASER DRVER 40V 10A 3.3VLOGICPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Type: Laser Diode Driver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 30V Supplier Device Package: Die Number of Channels: 1 Current - Supply: 50 mA |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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EPC21601 | EPC |
Description: IC LASER DRVER 40V 10A 3.3VLOGICPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Type: Laser Diode Driver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 30V Supplier Device Package: Die Number of Channels: 1 Current - Supply: 50 mA |
на замовлення 9877 шт: термін постачання 21-31 дні (днів) |
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EPC21601ENGRT | EPC |
Description: IC LASER DRVR 40V 10A 3.3V 6BMPDPackaging: Tape & Reel (TR) Type: Laser Diode Driver Voltage - Supply: 1.6V ~ 5.5V Number of Channels: 1 Current - Supply: 50 mA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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EPC21601ENGRT | EPC |
Description: IC LASER DRVR 40V 10A 3.3V 6BMPDPackaging: Cut Tape (CT) Type: Laser Diode Driver Voltage - Supply: 1.6V ~ 5.5V Number of Channels: 1 Current - Supply: 50 mA |
на замовлення 4333 шт: термін постачання 21-31 дні (днів) |
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EPC21603 | EPC |
Description: IC LASER DRVR 40V 10A LVDSLOGICPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Type: Laser Diode Driver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 30V Supplier Device Package: Die Part Status: Active Number of Channels: 1 Current - Supply: 47 mA |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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EPC21603 | EPC |
Description: IC LASER DRVR 40V 10A LVDSLOGICPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Type: Laser Diode Driver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 30V Supplier Device Package: Die Part Status: Active Number of Channels: 1 Current - Supply: 47 mA |
на замовлення 7842 шт: термін постачання 21-31 дні (днів) |
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EPC21603ENGRT | EPC |
Description: IC LASER DRVR 40V 10A LVDS 6BMPDPackaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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EPC21603ENGRT | EPC |
Description: IC LASER DRVR 40V 10A LVDS 6BMPDPackaging: Cut Tape (CT) |
на замовлення 5609 шт: термін постачання 21-31 дні (днів) |
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EPC21701 | EPC |
Description: IC GAN LASER DRVR 80VPackaging: Tape & Reel (TR) Type: Laser Diode Driver Voltage - Supply: 80V Part Status: Active Number of Channels: 1 |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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EPC21701 | EPC |
Description: IC GAN LASER DRVR 80VPackaging: Cut Tape (CT) Type: Laser Diode Driver Voltage - Supply: 80V Part Status: Active Number of Channels: 1 |
на замовлення 35819 шт: термін постачання 21-31 дні (днів) |
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| EPC21702ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 30A Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| EPC21702ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 30A Packaging: Cut Tape (CT) Part Status: Active |
на замовлення 2290 шт: термін постачання 21-31 дні (днів) |
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| EPC21704ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 75APackaging: Cut Tape (CT) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| EPC21704ENGRT | EPC |
Description: IC LASER DRVR GAN 80V 75APackaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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EPC2202 | EPC |
Description: GANFET N-CH 80V 18A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.75V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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EPC2202 | EPC |
Description: GANFET N-CH 80V 18A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.75V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 34345 шт: термін постачання 21-31 дні (днів) |
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EPC2203 | EPC |
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9 |
на замовлення 334 шт: термін постачання 21-30 дні (днів) |
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EPC2203 | EPC |
Description: GANFET N-CH 80V 1.7A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.75V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EPC2203 | EPC |
Description: GANFET N-CH 80V 1.7A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.75V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 246 шт: термін постачання 21-31 дні (днів) |
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EPC2204 | EPC |
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5 |
на замовлення 14783 шт: термін постачання 21-30 дні (днів) |
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EPC2204 | EPC |
Description: TRANS GAN 100V DIE 5.6MOHMPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V |
на замовлення 155000 шт: термін постачання 21-31 дні (днів) |
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EPC2204 | EPC |
Description: TRANS GAN 100V DIE 5.6MOHMPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V |
на замовлення 157295 шт: термін постачання 21-31 дні (днів) |
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| EPC2204 | EPC |
N-Channel 100 V 29A (Ta) Surface Mount Die Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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EPC2204A | EPC |
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5 |
на замовлення 2137 шт: термін постачання 21-30 дні (днів) |
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EPC2204A | EPC |
Description: TRANS GAN 80V .006OHM AECQ101Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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EPC2204A | EPC |
Description: TRANS GAN 80V .006OHM AECQ101Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Qualification: AEC-Q101 |
на замовлення 30286 шт: термін постачання 21-31 дні (днів) |
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EPC2206 | EPC |
Description: GANFET N-CH 80V 90A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 401838 шт: термін постачання 21-31 дні (днів) |
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EPC2206 | EPC |
Description: GANFET N-CH 80V 90A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 401500 шт: термін постачання 21-31 дні (днів) |
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EPC2207 | EPC |
Description: TRANS GAN 200V DIE .022OHMPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
на замовлення 31007 шт: термін постачання 21-31 дні (днів) |
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EPC2207 | EPC |
Description: TRANS GAN 200V DIE .022OHMPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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EPC2212 | EPC |
Description: GANFET N-CH 100V 18A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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EPC2212 | EPC |
Description: GANFET N-CH 100V 18A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 82713 шт: термін постачання 21-31 дні (днів) |
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EPC2214 | EPC |
Description: GANFET N-CH 80V 10A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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EPC2214 | EPC |
Description: GANFET N-CH 80V 10A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 90877 шт: термін постачання 21-31 дні (днів) |
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EPC2214 | EPC |
GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35 |
на замовлення 14858 шт: термін постачання 21-30 дні (днів) |
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EPC2215 | EPC |
GaN FETs EPC eGaN FET,200 V, 8 milliohm at 5 V, LGA 4.6 x 1.6 |
на замовлення 11251 шт: термін постачання 21-30 дні (днів) |
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EPC2215 | EPC |
Description: GAN TRANS 200V 8MOHM BUMPED DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 6mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
на замовлення 187500 шт: термін постачання 21-31 дні (днів) |
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EPC2215 | EPC |
Description: GAN TRANS 200V 8MOHM BUMPED DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 6mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
на замовлення 190912 шт: термін постачання 21-31 дні (днів) |
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EPC2216 | EPC |
Description: GANFET N-CH 15V 3.4A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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EPC2216 | EPC |
GaN FETs EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2 |
на замовлення 4950 шт: термін постачання 21-30 дні (днів) |
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EPC2216 | EPC |
Description: GANFET N-CH 15V 3.4A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 15 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 31656 шт: термін постачання 21-31 дні (днів) |
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EPC2218 | EPC |
Description: GANFET N-CH 100V DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
на замовлення 23000 шт: термін постачання 21-31 дні (днів) |
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EPC2218 | EPC |
Description: GANFET N-CH 100V DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
на замовлення 23560 шт: термін постачання 21-31 дні (днів) |
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EPC2218A | EPC |
Description: TRANS GAN 80V .0032OHM AECQ101Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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EPC2218A | EPC |
Description: TRANS GAN 80V .0032OHM AECQ101Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 21758 шт: термін постачання 21-31 дні (днів) |
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EPC2218A | EPC |
GaN FETs EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95 |
на замовлення 2110 шт: термін постачання 21-30 дні (днів) |
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EPC2219 | EPC |
Description: TRANS GAN 65V AECQ101 3.3OHM DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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EPC2219 | EPC |
Description: TRANS GAN 65V AECQ101 3.3OHM DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V |
на замовлення 7999 шт: термін постачання 21-31 дні (днів) |
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EPC2221 | EPC |
Description: GANFET 2N-CH 100V 5A DIEPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A Supplier Device Package: Die Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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EPC2221 | EPC |
Description: GANFET 2N-CH 100V 5A DIEPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A Supplier Device Package: Die Part Status: Active |
на замовлення 4109 шт: термін постачання 21-31 дні (днів) |
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EPC2234 | EPC |
Description: TRANS GAN AEC 160V .008OHM 24BGA Packaging: Tape & Reel (TR) Package / Case: 24-VFBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 24-BGA (4.6x2.6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.5V, -4V Drain to Source Voltage (Vdss): 160 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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EPC2234 | EPC |
Description: TRANS GAN AEC 160V .008OHM 24BGA Packaging: Cut Tape (CT) Package / Case: 24-VFBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: 24-BGA (4.6x2.6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +5.5V, -4V Drain to Source Voltage (Vdss): 160 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 6530 шт: термін постачання 21-31 дні (днів) |
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EPC2252 | EPC |
Description: TRANSGAN 80V.011OHM AECQ101 9BGAPackaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Supplier Device Package: Die Grade: Automotive Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 412 шт: термін постачання 21-31 дні (днів) |
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EPC2252 | EPC |
GaN FETs eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA |
на замовлення 12094 шт: термін постачання 21-30 дні (днів) |
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EPC2252 | EPC |
Description: TRANSGAN 80V.011OHM AECQ101 9BGAPackaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Supplier Device Package: Die Grade: Automotive Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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EPC2302 | EPC |
GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN |
на замовлення 16192 шт: термін постачання 21-30 дні (днів) |
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| EPC2152 |
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Виробник: EPC
Gate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage
Gate Drivers EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage
на замовлення 2379 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 757.57 грн |
| 10+ | 524.63 грн |
| 25+ | 405.67 грн |
| 100+ | 348.90 грн |
| 250+ | 324.67 грн |
| 500+ | 321.21 грн |
| 1000+ | 312.90 грн |
| EPC2152 |
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Виробник: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 10mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Voltage - Load: 0V ~ 60V
Supplier Device Package: Die
Fault Protection: Over Voltage, UVLO
Load Type: Inductive, Capacitive
на замовлення 8349 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 605.91 грн |
| 10+ | 453.20 грн |
| 25+ | 420.67 грн |
| 100+ | 361.26 грн |
| 250+ | 354.18 грн |
| EPC2152ENGRT |
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Виробник: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 347.51 грн |
| EPC2152ENGRT |
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Виробник: EPC
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRVR 12.5A 12LGA
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 12-WFLGA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 11V ~ 13V
Rds On (Typ): 8.5mOhm LS, 8.5mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 12.5A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 11V ~ 13V
Supplier Device Package: 12-LGA (3.85x2.59)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
на замовлення 22977 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 747.65 грн |
| 10+ | 490.40 грн |
| 25+ | 430.41 грн |
| 100+ | 340.30 грн |
| 250+ | 314.05 грн |
| EPC21601 |
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Виробник: EPC
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 104.86 грн |
| 5000+ | 98.98 грн |
| EPC21601 |
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Виробник: EPC
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
Description: IC LASER DRVER 40V 10A 3.3VLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Number of Channels: 1
Current - Supply: 50 mA
на замовлення 9877 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 198.59 грн |
| 10+ | 142.87 грн |
| 25+ | 130.85 грн |
| 100+ | 110.34 грн |
| 250+ | 104.40 грн |
| 500+ | 102.50 грн |
| EPC21601ENGRT |
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Виробник: EPC
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Current - Supply: 50 mA
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Current - Supply: 50 mA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 110.90 грн |
| EPC21601ENGRT |
![]() |
Виробник: EPC
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Current - Supply: 50 mA
Description: IC LASER DRVR 40V 10A 3.3V 6BMPD
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Current - Supply: 50 mA
на замовлення 4333 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 221.18 грн |
| 10+ | 191.09 грн |
| 25+ | 180.68 грн |
| 100+ | 146.94 грн |
| 250+ | 139.41 грн |
| 500+ | 125.09 грн |
| 1000+ | 103.77 грн |
| EPC21603 |
![]() |
Виробник: EPC
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 94.17 грн |
| EPC21603 |
![]() |
Виробник: EPC
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
Description: IC LASER DRVR 40V 10A LVDSLOGIC
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 30V
Supplier Device Package: Die
Part Status: Active
Number of Channels: 1
Current - Supply: 47 mA
на замовлення 7842 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 195.48 грн |
| 10+ | 140.99 грн |
| 25+ | 129.11 грн |
| 100+ | 108.86 грн |
| 250+ | 103.01 грн |
| 500+ | 99.48 грн |
| 1000+ | 94.99 грн |
| EPC21603ENGRT |
![]() |
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 95.86 грн |
| EPC21603ENGRT |
![]() |
на замовлення 5609 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 288.16 грн |
| 10+ | 179.09 грн |
| 25+ | 153.41 грн |
| 100+ | 116.71 грн |
| 250+ | 103.33 грн |
| 500+ | 95.09 грн |
| 1000+ | 86.75 грн |
| EPC21701 |
![]() |
Виробник: EPC
Description: IC GAN LASER DRVR 80V
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
Description: IC GAN LASER DRVR 80V
Packaging: Tape & Reel (TR)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 111.27 грн |
| EPC21701 |
![]() |
Виробник: EPC
Description: IC GAN LASER DRVR 80V
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
Description: IC GAN LASER DRVR 80V
Packaging: Cut Tape (CT)
Type: Laser Diode Driver
Voltage - Supply: 80V
Part Status: Active
Number of Channels: 1
на замовлення 35819 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 320.87 грн |
| 10+ | 200.54 грн |
| 25+ | 172.25 грн |
| 100+ | 131.64 грн |
| 250+ | 116.90 грн |
| 500+ | 107.83 грн |
| 1000+ | 98.90 грн |
| EPC21702ENGRT |
на замовлення 2290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 307.63 грн |
| 10+ | 266.31 грн |
| 25+ | 251.75 грн |
| 100+ | 204.75 грн |
| 250+ | 194.25 грн |
| 500+ | 174.30 грн |
| 1000+ | 144.59 грн |
| EPC2202 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 80V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 86.60 грн |
| EPC2202 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 80V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
на замовлення 34345 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 259.34 грн |
| 10+ | 163.64 грн |
| 100+ | 114.76 грн |
| 500+ | 95.79 грн |
| EPC2203 |
![]() |
Виробник: EPC
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
GaN FETs EPC eGaN FET,80 V, 80 milliohm at 5 V, BGA 0.9 x 0.9
на замовлення 334 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.76 грн |
| 10+ | 63.69 грн |
| 100+ | 36.76 грн |
| 500+ | 28.87 грн |
| 1000+ | 26.31 грн |
| 2500+ | 23.47 грн |
| 5000+ | 21.32 грн |
| EPC2203 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| EPC2203 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 80V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.75V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 246 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 104.36 грн |
| 10+ | 63.45 грн |
| 100+ | 42.15 грн |
| EPC2204 |
![]() |
Виробник: EPC
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
на замовлення 14783 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.72 грн |
| 10+ | 144.10 грн |
| 100+ | 87.23 грн |
| 500+ | 74.07 грн |
| 1000+ | 70.61 грн |
| 2500+ | 62.72 грн |
| EPC2204 |
![]() |
Виробник: EPC
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
на замовлення 155000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 70.78 грн |
| 5000+ | 64.54 грн |
| EPC2204 |
![]() |
Виробник: EPC
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Description: TRANS GAN 100V DIE 5.6MOHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
на замовлення 157295 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.19 грн |
| 10+ | 143.24 грн |
| 100+ | 99.41 грн |
| 500+ | 75.72 грн |
| 1000+ | 74.13 грн |
| EPC2204 |
![]() |
Виробник: EPC
N-Channel 100 V 29A (Ta) Surface Mount Die Група товару: Транзистори Од. вим: шт
N-Channel 100 V 29A (Ta) Surface Mount Die Група товару: Транзистори Од. вим: шт
товару немає в наявності
В кошику
од. на суму грн.
| EPC2204A |
![]() |
Виробник: EPC
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
GaN FETs EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
на замовлення 2137 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 256.02 грн |
| 10+ | 165.59 грн |
| 100+ | 100.38 грн |
| 500+ | 88.61 грн |
| 1000+ | 85.15 грн |
| 2500+ | 75.46 грн |
| EPC2204A |
![]() |
Виробник: EPC
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 83.06 грн |
| 5000+ | 77.44 грн |
| EPC2204A |
![]() |
Виробник: EPC
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101
на замовлення 30286 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 261.68 грн |
| 10+ | 164.77 грн |
| 100+ | 115.26 грн |
| 500+ | 88.96 грн |
| EPC2206 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Grade: Automotive
Qualification: AEC-Q101
на замовлення 401838 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 376.16 грн |
| 10+ | 240.96 грн |
| 100+ | 172.28 грн |
| EPC2206 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Grade: Automotive
Qualification: AEC-Q101
на замовлення 401500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 152.24 грн |
| EPC2207 |
![]() |
Виробник: EPC
Description: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 31007 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 226.63 грн |
| 10+ | 141.89 грн |
| 100+ | 98.44 грн |
| 500+ | 74.95 грн |
| 1000+ | 73.23 грн |
| EPC2207 |
![]() |
Виробник: EPC
Description: TRANS GAN 200V DIE .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: TRANS GAN 200V DIE .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 70.03 грн |
| 5000+ | 63.75 грн |
| EPC2212 |
![]() |
Виробник: EPC
Description: GANFET N-CH 100V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 100V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 89.65 грн |
| 5000+ | 84.45 грн |
| EPC2212 |
![]() |
Виробник: EPC
Description: GANFET N-CH 100V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 100V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101
на замовлення 82713 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 278.81 грн |
| 10+ | 176.16 грн |
| 100+ | 123.70 грн |
| 500+ | 97.01 грн |
| EPC2214 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 80V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 52.13 грн |
| 5000+ | 47.01 грн |
| 7500+ | 45.41 грн |
| EPC2214 |
![]() |
Виробник: EPC
Description: GANFET N-CH 80V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 80V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 90877 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 176.79 грн |
| 10+ | 109.57 грн |
| 100+ | 74.94 грн |
| 500+ | 56.42 грн |
| 1000+ | 52.17 грн |
| EPC2214 |
![]() |
Виробник: EPC
GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35
на замовлення 14858 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.64 грн |
| 10+ | 109.86 грн |
| 100+ | 65.49 грн |
| 500+ | 52.54 грн |
| 1000+ | 50.47 грн |
| 2500+ | 44.10 грн |
| EPC2215 |
![]() |
Виробник: EPC
GaN FETs EPC eGaN FET,200 V, 8 milliohm at 5 V, LGA 4.6 x 1.6
GaN FETs EPC eGaN FET,200 V, 8 milliohm at 5 V, LGA 4.6 x 1.6
на замовлення 11251 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 382.82 грн |
| 10+ | 251.57 грн |
| 100+ | 204.91 грн |
| EPC2215 |
![]() |
Виробник: EPC
Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 187500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 146.62 грн |
| EPC2215 |
![]() |
Виробник: EPC
Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
на замовлення 190912 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 408.09 грн |
| 10+ | 262.71 грн |
| 100+ | 188.85 грн |
| 500+ | 162.18 грн |
| EPC2216 |
![]() |
Виробник: EPC
Description: GANFET N-CH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 37.71 грн |
| EPC2216 |
![]() |
Виробник: EPC
GaN FETs EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2
GaN FETs EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2
на замовлення 4950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.92 грн |
| 10+ | 87.57 грн |
| 100+ | 51.30 грн |
| 500+ | 40.77 грн |
| 1000+ | 37.59 грн |
| 2500+ | 32.47 грн |
| EPC2216 |
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Виробник: EPC
Description: GANFET N-CH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: GANFET N-CH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 31656 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.30 грн |
| 10+ | 88.27 грн |
| 100+ | 59.62 грн |
| 500+ | 44.44 грн |
| 1000+ | 40.73 грн |
| EPC2218 |
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Виробник: EPC
Description: GANFET N-CH 100V DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: GANFET N-CH 100V DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 23000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 208.65 грн |
| EPC2218 |
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Виробник: EPC
Description: GANFET N-CH 100V DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: GANFET N-CH 100V DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 23560 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 498.43 грн |
| 10+ | 324.96 грн |
| 100+ | 245.93 грн |
| EPC2218A |
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Виробник: EPC
Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Qualification: AEC-Q101
Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 167.08 грн |
| 2000+ | 156.16 грн |
| EPC2218A |
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Виробник: EPC
Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Qualification: AEC-Q101
Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Qualification: AEC-Q101
на замовлення 21758 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 440.02 грн |
| 10+ | 284.38 грн |
| 100+ | 205.38 грн |
| 500+ | 179.38 грн |
| EPC2218A |
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Виробник: EPC
GaN FETs EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95
GaN FETs EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95
на замовлення 2110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 416.74 грн |
| 10+ | 285.80 грн |
| 100+ | 179.99 грн |
| 500+ | 178.60 грн |
| 1000+ | 152.30 грн |
| EPC2219 |
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Виробник: EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 41.64 грн |
| 5000+ | 38.19 грн |
| EPC2219 |
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Виробник: EPC
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
на замовлення 7999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.47 грн |
| 10+ | 79.27 грн |
| 100+ | 61.69 грн |
| 500+ | 49.07 грн |
| 1000+ | 39.97 грн |
| EPC2221 |
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Виробник: EPC
Description: GANFET 2N-CH 100V 5A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
Description: GANFET 2N-CH 100V 5A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 80.44 грн |
| EPC2221 |
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Виробник: EPC
Description: GANFET 2N-CH 100V 5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
Description: GANFET 2N-CH 100V 5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
на замовлення 4109 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 246.88 грн |
| 10+ | 155.47 грн |
| 100+ | 108.50 грн |
| 500+ | 82.96 грн |
| 1000+ | 76.88 грн |
| EPC2234 |
Виробник: EPC
Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 456.16 грн |
| EPC2234 |
Виробник: EPC
Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
на замовлення 6530 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 918.99 грн |
| 10+ | 617.59 грн |
| 100+ | 466.64 грн |
| EPC2252 |
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Виробник: EPC
Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
на замовлення 412 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 183.02 грн |
| 10+ | 113.99 грн |
| 100+ | 78.08 грн |
| EPC2252 |
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Виробник: EPC
GaN FETs eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA
GaN FETs eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA
на замовлення 12094 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 179.30 грн |
| 10+ | 114.64 грн |
| 100+ | 68.47 грн |
| 500+ | 54.76 грн |
| 1000+ | 52.40 грн |
| 2500+ | 46.45 грн |
| EPC2252 |
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Виробник: EPC
Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
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