Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5614) > Сторінка 11 з 94
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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KBU8A | GeneSiC Semiconductor |
 Description: BRIDGE RECT 1PHASE 50V 8A KBUPackaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Obsolete Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KBU8B | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 100V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
на замовлення 4501 шт: термін постачання 21-31 дні (днів) |
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KBU8D | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KBU8G | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 400V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 3952 шт: термін постачання 21-31 дні (днів) |
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KBU8J | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 600V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 3753 шт: термін постачання 21-31 дні (днів) |
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KBU8K | GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 800V 8A KBU Packaging: Bulk Package / Case: 4-SIP, KBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| M3P100A-100 | GeneSiC Semiconductor |
Description: DIODE STD REC 1000V 100A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| M3P100A-120 | GeneSiC Semiconductor |
Description: DIODE STD REC 1200V 100A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| M3P100A-140 | GeneSiC Semiconductor |
Description: DIODE STD REC 1400V 100A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| M3P100A-160 | GeneSiC Semiconductor |
Description: DIODE STD REC 1600V 100A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| M3P100A-60 | GeneSiC Semiconductor |
Description: DIODE STD REC 600V 100A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| M3P100A-80 | GeneSiC Semiconductor |
Description: DIODE STD REC 800V 100A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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M3P75A-100 | GeneSiC Semiconductor |
Description: DIODE STD REC 1000V 75A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M3P75A-120 | GeneSiC Semiconductor |
Description: DIODE STD REC 1200V 75A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M3P75A-140 | GeneSiC Semiconductor |
Description: DIODE STD REC 1400V 75A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M3P75A-160 | GeneSiC Semiconductor |
Description: DIODE STD REC 1600V 75A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M3P75A-60 | GeneSiC Semiconductor |
Description: DIODE STD REC 600V 75A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M3P75A-80 | GeneSiC Semiconductor |
Description: DIODE STD REC 800V 75A 3PH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR120100CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60 Voltage Coupled to Current - Reverse Leakage @ Vr: 20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR120100CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 100V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MBR12035CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR12080CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR12080CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 80V 120A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 120A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A Current - Reverse Leakage @ Vr: 3 mA @ 20 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60 Voltage Coupled to Current - Reverse Leakage @ Vr: 20 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20020CT | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 200A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20020CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 200A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20035CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20035CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 35V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20040CT | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 200A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20040CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 200A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20045CT | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20045CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20060CT | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20060CTR | GeneSiC Semiconductor |
Description: DIODE MOD SCHOTT 60V 200A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20080CT | GeneSiC Semiconductor |
Description: DIODE MODULE 80V 200A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR20080CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 80V 200A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR300100CT | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR300100CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 100V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBR30020CT | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR30020CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 20V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR30030CT | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR30030CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 30V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MBR30040CT | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR30040CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 40V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBR30045CT | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A Current - Reverse Leakage @ Vr: 8 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MBR30045CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 45V 150A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 150A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A Current - Reverse Leakage @ Vr: 8 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR30060CT | GeneSiC Semiconductor |
Description: DIODE MODULE 60V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR30060CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 60V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR30080CT | GeneSiC Semiconductor |
Description: DIODE MODULE 80V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR30080CTR | GeneSiC Semiconductor |
Description: DIODE MODULE 80V 300A 2TOWER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR35100 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 100V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR35100R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 100V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR3520 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 20V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR3520R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 20V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR3530 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 30V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR3530R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 30V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR3535 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 35V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR3535R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 35V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
MBR3540 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 40V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MBR3540R | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY REV 40V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR3560 | GeneSiC Semiconductor |
Description: DIODE SCHOTTKY 60V 35A DO4 Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 35A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. |
| KBU8A |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 50V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| KBU8B |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 4501 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.00 грн |
| 10+ | 94.96 грн |
| 25+ | 84.56 грн |
| 100+ | 66.64 грн |
| 250+ | 59.36 грн |
| 500+ | 54.44 грн |
| 1000+ | 49.03 грн |
| 2500+ | 43.68 грн |
| KBU8D |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| KBU8G |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 3952 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.00 грн |
| 10+ | 94.96 грн |
| 25+ | 84.56 грн |
| 100+ | 66.64 грн |
| 250+ | 59.36 грн |
| 500+ | 54.44 грн |
| 1000+ | 49.03 грн |
| 2500+ | 43.68 грн |
| KBU8J |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3753 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.85 грн |
| 10+ | 95.54 грн |
| 25+ | 85.06 грн |
| 100+ | 67.03 грн |
| 250+ | 59.71 грн |
| 500+ | 54.76 грн |
| 1000+ | 49.32 грн |
| 2500+ | 43.93 грн |
| KBU8K |
|
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| M3P100A-100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1000V 100A 3PH
Description: DIODE STD REC 1000V 100A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| M3P100A-120 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1200V 100A 3PH
Description: DIODE STD REC 1200V 100A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| M3P100A-140 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1400V 100A 3PH
Description: DIODE STD REC 1400V 100A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| M3P100A-160 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1600V 100A 3PH
Description: DIODE STD REC 1600V 100A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| M3P100A-60 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 600V 100A 3PH
Description: DIODE STD REC 600V 100A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| M3P100A-80 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 800V 100A 3PH
Description: DIODE STD REC 800V 100A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| M3P75A-100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1000V 75A 3PH
Description: DIODE STD REC 1000V 75A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| M3P75A-120 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1200V 75A 3PH
Description: DIODE STD REC 1200V 75A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| M3P75A-140 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1400V 75A 3PH
Description: DIODE STD REC 1400V 75A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| M3P75A-160 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 1600V 75A 3PH
Description: DIODE STD REC 1600V 75A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| M3P75A-60 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 600V 75A 3PH
Description: DIODE STD REC 600V 75A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| M3P75A-80 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE STD REC 800V 75A 3PH
Description: DIODE STD REC 800V 75A 3PH
товару немає в наявності
В кошику
од. на суму грн.
| MBR120100CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Description: DIODE MOD SCHOT 100V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
товару немає в наявності
В кошику
од. на суму грн.
| MBR120100CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOT 100V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR12035CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR12080CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Description: DIODE MOD SCHOTT 80V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR12080CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 80V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Description: DIODE MOD SCHOTT 80V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 60
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
товару немає в наявності
В кошику
од. на суму грн.
| MBR20020CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 20V 200A 2TOWER
Description: DIODE MODULE 20V 200A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR20020CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 20V 200A 2TOWER
Description: DIODE MODULE 20V 200A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR20035CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR20035CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 35V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR20040CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 2TOWER
Description: DIODE MODULE 40V 200A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR20040CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 200A 2TOWER
Description: DIODE MODULE 40V 200A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR20045CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MODULE 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR20045CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MODULE 45V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR20060CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR20060CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
Description: DIODE MOD SCHOTT 60V 200A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Twin Tower
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR20080CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 80V 200A 2TOWER
Description: DIODE MODULE 80V 200A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR20080CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 80V 200A 2TOWER
Description: DIODE MODULE 80V 200A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR300100CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 2TOWER
Description: DIODE MODULE 100V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR300100CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 100V 300A 2TOWER
Description: DIODE MODULE 100V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30020CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 20V 300A 2TOWER
Description: DIODE MODULE 20V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30020CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 20V 300A 2TOWER
Description: DIODE MODULE 20V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30030CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 2TOWER
Description: DIODE MODULE 30V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30030CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 30V 300A 2TOWER
Description: DIODE MODULE 30V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30040CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 2TOWER
Description: DIODE MODULE 40V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30040CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 40V 300A 2TOWER
Description: DIODE MODULE 40V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30045CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
Description: DIODE MODULE 45V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR30045CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 45V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
Description: DIODE MODULE 45V 150A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 150 A
Current - Reverse Leakage @ Vr: 8 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR30060CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 2TOWER
Description: DIODE MODULE 60V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30060CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 60V 300A 2TOWER
Description: DIODE MODULE 60V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30080CT |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 2TOWER
Description: DIODE MODULE 80V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR30080CTR |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 80V 300A 2TOWER
Description: DIODE MODULE 80V 300A 2TOWER
товару немає в наявності
В кошику
од. на суму грн.
| MBR35100 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR35100R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY REV 100V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR3520 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 20V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY 20V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR3520R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 20V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY REV 20V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR3530 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 30V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY 30V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR3530R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 30V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY REV 30V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR3535 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY 35V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR3535R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 35V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY REV 35V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR3540 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 40V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY 40V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR3540R |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 40V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY REV 40V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| MBR3560 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 60V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY 60V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.