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IR3629AMTRPBF IR3629AMTRPBF Infineon Technologies Description: IC REG CTRLR DDR 1OUT 12MLPD
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IR3721MTRPBF IR3721MTRPBF Infineon Technologies IR3721.pdf Description: IC POWER SUPPLY MONITOR 10-DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 10-DFN (3x3)
Part Status: Obsolete
Current - Supply: 350 µA
DigiKey Programmable: Not Verified
на замовлення 1712 шт:
термін постачання 21-31 дні (днів)
3+127.65 грн
10+104.40 грн
25+97.95 грн
100+85.39 грн
Мінімальне замовлення: 3
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IR3822AMTRPBF IR3822AMTRPBF Infineon Technologies IR3822AMPBF.pdf Description: IC REG BUCK ADJUSTABLE 6A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
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IRF7342QTRPBF IRF7342QTRPBF Infineon Technologies IRF7342QPbF.pdf Description: MOSFET 2P-CH 55V 3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF7750GTRPBF IRF7750GTRPBF Infineon Technologies irf7750gpbf.pdf Description: MOSFET 2P-CH 20V 4.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
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IRF7862TRPBF IRF7862TRPBF Infineon Technologies irf7862pbf.pdf?fileId=5546d462533600a40153560c68b71d2d Description: MOSFET N-CH 30V 21A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 15 V
на замовлення 10249 шт:
термін постачання 21-31 дні (днів)
4+103.29 грн
10+64.21 грн
100+45.44 грн
500+33.44 грн
1000+30.47 грн
2000+27.98 грн
Мінімальне замовлення: 4
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IRS2092STRPBF IRS2092STRPBF Infineon Technologies IRS2092.pdf Description: IC AMP CLASS D MONO 16SOIC
Features: Depop, Short-Circuit Protection
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 2578 шт:
термін постачання 21-31 дні (днів)
3+135.20 грн
10+95.83 грн
25+87.21 грн
100+72.96 грн
250+68.72 грн
500+66.17 грн
1000+63.02 грн
Мінімальне замовлення: 3
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IRS21271STRPBF IRS21271STRPBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1642 шт:
термін постачання 21-31 дні (днів)
6+65.50 грн
10+45.04 грн
25+40.60 грн
100+33.49 грн
250+31.29 грн
500+29.97 грн
1000+28.41 грн
Мінімальне замовлення: 6
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IRS2127STRPBF IRS2127STRPBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3412 шт:
термін постачання 21-31 дні (днів)
6+66.34 грн
10+45.93 грн
25+41.44 грн
100+34.21 грн
250+31.98 грн
500+30.63 грн
1000+29.04 грн
Мінімальне замовлення: 6
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IRS21281STRPBF IRS21281STRPBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRFS3806PBF IRFS3806PBF Infineon Technologies irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a Description: MOSFET N-CH 60V 43A D2PAK
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IRF1018ESPBF IRF1018ESPBF Infineon Technologies irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891 description Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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IRFR3607PBF IRFR3607PBF Infineon Technologies irfr3607pbf.pdf?fileId=5546d462533600a401535631463620a7 description Description: MOSFET N-CH 75V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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IR1150IPBF IR1150IPBF Infineon Technologies IR1150%28S%29%28PbF%29%2C%20IR1150I%28S%29%28PbF%29.pdf Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
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IRFI4019H-117P IRFI4019H-117P Infineon Technologies irfi4019h-117p.pdf?fileId=5546d462533600a401535623d74d1f6f Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
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IR1150PBF IR1150PBF Infineon Technologies IR1150%28S%29%28PbF%29%2C%20IR1150I%28S%29%28PbF%29.pdf Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
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IRF7521D1PBF IRF7521D1PBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 20V 2.4A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
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IRS2336JPBF IRS2336JPBF Infineon Technologies Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRL3103D1SPBF IRL3103D1SPBF Infineon Technologies IRL3103D1SPBF.pdf Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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IRFB4233PBF IRFB4233PBF Infineon Technologies IRFB4233PBF.pdf Description: MOSFET N-CH 230V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 28A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 230 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
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IR2135PBF IR2135PBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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PVD1352NPBF PVD1352NPBF Infineon Technologies pvd13n.pdf?fileId=5546d462533600a401535683b097292f Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 550 mA
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
на замовлення 1175 шт:
термін постачання 21-31 дні (днів)
1+503.03 грн
10+431.75 грн
25+412.36 грн
50+373.73 грн
100+360.90 грн
250+344.61 грн
500+327.32 грн
1000+316.06 грн
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IRLR3114ZPBF IRLR3114ZPBF Infineon Technologies irlr3114zpbf.pdf?fileId=5546d462533600a40153566d002d268d description Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
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IRGSL6B60KPBF IRGSL6B60KPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V 13A 90W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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IR2167PBF IR2167PBF Infineon Technologies IR2167%28S%29PbF.pdf Description: IC PFC/BALLAST CNTRL 47KHZ 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 41kHz ~ 47kHz
Type: PFC/Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.4V ~ 16.5V
Supplier Device Package: 20-PDIP
Dimming: No
Current - Supply: 10 mA
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IRF5305LPBF IRF5305LPBF Infineon Technologies irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995 Description: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRF3704ZCLPBF IRF3704ZCLPBF Infineon Technologies irf3704zcspbf.pdf Description: MOSFET N-CH 20V 67A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
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IRFI4024H-117P IRFI4024H-117P Infineon Technologies IRFI4024H-117P.pdf Description: MOSFET 2N-CH 55V 11A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 14W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 11A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 60mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Obsolete
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IRL1404ZLPBF IRL1404ZLPBF Infineon Technologies irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5 Description: MOSFET N-CH 40V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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PVD1352NSPBF PVD1352NSPBF Infineon Technologies pvd13n.pdf?fileId=5546d462533600a401535683b097292f Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 550 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 596 шт:
термін постачання 21-31 дні (днів)
1+507.23 грн
10+434.99 грн
25+415.43 грн
50+376.51 грн
100+363.59 грн
250+347.18 грн
500+329.76 грн
В кошику  од. на суму  грн.
IRF3805LPBF IRF3805LPBF Infineon Technologies irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
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В кошику  од. на суму  грн.
64-6006PBF 64-6006PBF Infineon Technologies IRFP4242PBF.pdf Description: MOSFET N-CH 300V 46A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 33A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 247 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 25 V
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IRF3805PBF IRF3805PBF Infineon Technologies irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
2+286.36 грн
10+182.36 грн
100+129.40 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PVA1354NPBF PVA1354NPBF Infineon Technologies pva13n.pdf?fileId=5546d462533600a401535683928a291e Description: SSR RELAY SPST-NO 375MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 375 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
на замовлення 2061 шт:
термін постачання 21-31 дні (днів)
1+676.02 грн
10+579.98 грн
25+553.85 грн
50+501.91 грн
100+484.70 грн
250+462.82 грн
500+439.58 грн
1000+424.46 грн
В кошику  од. на суму  грн.
PVT312LPBF PVT312LPBF Infineon Technologies pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
на замовлення 822 шт:
термін постачання 21-31 дні (днів)
1+380.42 грн
10+326.54 грн
25+311.86 грн
50+282.63 грн
100+272.94 грн
250+260.63 грн
500+247.55 грн
В кошику  од. на суму  грн.
IRF9520NLPBF IRF9520NLPBF Infineon Technologies irf9520nspbf.pdf Description: MOSFET P-CH 100V 6.8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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IRFP4229PBF IRFP4229PBF Infineon Technologies irfp4229pbf.pdf?fileId=5546d462533600a40153562933922008 Description: MOSFET N-CH 250V 44A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
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PVR3300NPBF PVR3300NPBF Infineon Technologies PVR33N%20(PbF).pdf Description: SSR RELAY DPST-NO 165MA 0-300V
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IRF7526D1PBF IRF7526D1PBF Infineon Technologies IRF7526D1PBF.pdf Description: MOSFET P-CH 30V 2A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
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PVA3354NSPBF PVA3354NSPBF Infineon Technologies IRSDS10619-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 150MA 0-300V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 150 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
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IRFS3207PBF IRFS3207PBF Infineon Technologies irfs3207pbf.pdf?fileId=5546d462533600a401535636708e215e Description: MOSFET N-CH 75V 170A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V
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IRS23364DSPBF IRS23364DSPBF Infineon Technologies Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFS4310ZPBF IRFS4310ZPBF Infineon Technologies irfb4310zpbf.pdf?fileId=5546d462533600a4015356161b4d1e2d Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
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IRS2127PBF IRS2127PBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFU540ZPBF IRFU540ZPBF Infineon Technologies irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Description: MOSFET N-CH 100V 35A IPAK
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IR2153DPBF IR2153DPBF Infineon Technologies IR2153_D_S_PbF_5-21-20.pdf description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRS20954SPBF IRS20954SPBF Infineon Technologies IRS20954SPBF.pdf description Description: IC LINE DRIVER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Channels: 2
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IRF5210LPBF IRF5210LPBF Infineon Technologies irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e description Description: MOSFET P-CH 100V 38A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
товару немає в наявності
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IRS2153DPBF IRS2153DPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1986 шт:
термін постачання 21-31 дні (днів)
2+241.02 грн
10+174.43 грн
50+151.21 грн
100+135.17 грн
250+128.06 грн
500+123.77 грн
1000+118.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR21593PBF IR21593PBF Infineon Technologies IR21592%2C93%20%28S%29%20%28PbF%29.pdf description Description: IC BALLAST CNTRL 230KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 30kHz ~ 230kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 16.5V
Supplier Device Package: 16-DIP
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
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В кошику  од. на суму  грн.
PVD1354NPBF PVD1354NPBF Infineon Technologies pvd13n.pdf?fileId=5546d462533600a401535683b097292f Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 550 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
1+464.40 грн
10+398.19 грн
25+380.30 грн
50+344.67 грн
100+332.84 грн
250+317.82 грн
500+301.87 грн
1000+291.49 грн
В кошику  од. на суму  грн.
IR21531PBF IR21531PBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2223 шт:
термін постачання 21-31 дні (днів)
2+241.02 грн
10+174.43 грн
50+151.21 грн
100+135.17 грн
250+128.06 грн
500+123.77 грн
1000+118.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPS1011PBF IPS1011PBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
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IR2112PBF IR2112PBF Infineon Technologies ir2112.pdf?fileId=5546d462533600a4015355c81cb71685 description Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 778 шт:
термін постачання 21-31 дні (днів)
2+313.24 грн
10+228.69 грн
25+210.42 грн
100+178.62 грн
250+169.64 грн
500+164.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF6215LPBF IRF6215LPBF Infineon Technologies irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2 Description: MOSFET P-CH 150V 13A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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PVR3301NPBF PVR3301NPBF Infineon Technologies PVR33N%20(PbF).pdf Description: SSR RELAY DPST-NO 165MA 0-300V
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IRS2168DPBF IRS2168DPBF Infineon Technologies irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 description Description: IC PFC/BALLAST CTR 46.5KHZ 16DIP
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IRS2540PBF IRS2540PBF Infineon Technologies IRS254%280%2C1%29%28S%29PbF.pdf Description: IC LED DRIVER CTRLR PWM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-PDIP
Dimming: PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 15.6V
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IRGB4045DPBF IRGB4045DPBF Infineon Technologies IRGB4045DPbF.pdf description Description: IGBT TRENCH 600V 12A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRS2011PBF IRS2011PBF Infineon Technologies INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IR3629AMTRPBF
IR3629AMTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 1OUT 12MLPD
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IR3721MTRPBF IR3721.pdf
IR3721MTRPBF
Виробник: Infineon Technologies
Description: IC POWER SUPPLY MONITOR 10-DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 10-DFN (3x3)
Part Status: Obsolete
Current - Supply: 350 µA
DigiKey Programmable: Not Verified
на замовлення 1712 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.65 грн
10+104.40 грн
25+97.95 грн
100+85.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IR3822AMTRPBF IR3822AMPBF.pdf
IR3822AMTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 6A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
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IRF7342QTRPBF IRF7342QPbF.pdf
IRF7342QTRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 55V 3.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF7750GTRPBF irf7750gpbf.pdf
IRF7750GTRPBF
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 4.7A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
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IRF7862TRPBF irf7862pbf.pdf?fileId=5546d462533600a40153560c68b71d2d
IRF7862TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 21A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4090 pF @ 15 V
на замовлення 10249 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.29 грн
10+64.21 грн
100+45.44 грн
500+33.44 грн
1000+30.47 грн
2000+27.98 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRS2092STRPBF IRS2092.pdf
IRS2092STRPBF
Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 16SOIC
Features: Depop, Short-Circuit Protection
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 2578 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+135.20 грн
10+95.83 грн
25+87.21 грн
100+72.96 грн
250+68.72 грн
500+66.17 грн
1000+63.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRS21271STRPBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS21271STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1642 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+65.50 грн
10+45.04 грн
25+40.60 грн
100+33.49 грн
250+31.29 грн
500+29.97 грн
1000+28.41 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRS2127STRPBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS2127STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3412 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+66.34 грн
10+45.93 грн
25+41.44 грн
100+34.21 грн
250+31.98 грн
500+30.63 грн
1000+29.04 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IRS21281STRPBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS21281STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRFS3806PBF irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a
IRFS3806PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A D2PAK
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IRF1018ESPBF description irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891
IRF1018ESPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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IRFR3607PBF description irfr3607pbf.pdf?fileId=5546d462533600a401535631463620a7
IRFR3607PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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IR1150IPBF IR1150%28S%29%28PbF%29%2C%20IR1150I%28S%29%28PbF%29.pdf
IR1150IPBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
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IRFI4019H-117P irfi4019h-117p.pdf?fileId=5546d462533600a401535623d74d1f6f
IRFI4019H-117P
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
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IR1150PBF IR1150%28S%29%28PbF%29%2C%20IR1150I%28S%29%28PbF%29.pdf
IR1150PBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
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IRF7521D1PBF IR_PartNumberingSystem.pdf
IRF7521D1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 2.4A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
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IRS2336JPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
IRS2336JPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRL3103D1SPBF IRL3103D1SPBF.pdf
IRL3103D1SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
товару немає в наявності
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IRFB4233PBF IRFB4233PBF.pdf
IRFB4233PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 230V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 28A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 230 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
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IR2135PBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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PVD1352NPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
PVD1352NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 550 mA
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
на замовлення 1175 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+503.03 грн
10+431.75 грн
25+412.36 грн
50+373.73 грн
100+360.90 грн
250+344.61 грн
500+327.32 грн
1000+316.06 грн
В кошику  од. на суму  грн.
IRLR3114ZPBF description irlr3114zpbf.pdf?fileId=5546d462533600a40153566d002d268d
IRLR3114ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
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IRGSL6B60KPBF Part_Number_Guide_Web.pdf
IRGSL6B60KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 13A 90W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
товару немає в наявності
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IR2167PBF IR2167%28S%29PbF.pdf
IR2167PBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAST CNTRL 47KHZ 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 41kHz ~ 47kHz
Type: PFC/Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.4V ~ 16.5V
Supplier Device Package: 20-PDIP
Dimming: No
Current - Supply: 10 mA
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IRF5305LPBF irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995
IRF5305LPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRF3704ZCLPBF irf3704zcspbf.pdf
IRF3704ZCLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 67A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
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IRFI4024H-117P IRFI4024H-117P.pdf
IRFI4024H-117P
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 11A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 14W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 11A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 60mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Obsolete
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IRL1404ZLPBF irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5
IRL1404ZLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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PVD1352NSPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
PVD1352NSPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 550 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 596 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+507.23 грн
10+434.99 грн
25+415.43 грн
50+376.51 грн
100+363.59 грн
250+347.18 грн
500+329.76 грн
В кошику  од. на суму  грн.
IRF3805LPBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
IRF3805LPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
товару немає в наявності
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64-6006PBF IRFP4242PBF.pdf
64-6006PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 46A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 33A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 247 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 25 V
товару немає в наявності
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IRF3805PBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
IRF3805PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
на замовлення 191 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+286.36 грн
10+182.36 грн
100+129.40 грн
Мінімальне замовлення: 2
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PVA1354NPBF pva13n.pdf?fileId=5546d462533600a401535683928a291e
PVA1354NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 375MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 375 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
на замовлення 2061 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+676.02 грн
10+579.98 грн
25+553.85 грн
50+501.91 грн
100+484.70 грн
250+462.82 грн
500+439.58 грн
1000+424.46 грн
В кошику  од. на суму  грн.
PVT312LPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
PVT312LPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
на замовлення 822 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+380.42 грн
10+326.54 грн
25+311.86 грн
50+282.63 грн
100+272.94 грн
250+260.63 грн
500+247.55 грн
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IRF9520NLPBF irf9520nspbf.pdf
IRF9520NLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 6.8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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IRFP4229PBF irfp4229pbf.pdf?fileId=5546d462533600a40153562933922008
IRFP4229PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 44A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
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PVR3300NPBF PVR33N%20(PbF).pdf
PVR3300NPBF
Виробник: Infineon Technologies
Description: SSR RELAY DPST-NO 165MA 0-300V
товару немає в наявності
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IRF7526D1PBF IRF7526D1PBF.pdf
IRF7526D1PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 2A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
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PVA3354NSPBF IRSDS10619-1.pdf?t.download=true&u=5oefqw
PVA3354NSPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 150MA 0-300V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 150 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
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IRFS3207PBF irfs3207pbf.pdf?fileId=5546d462533600a401535636708e215e
IRFS3207PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 170A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V
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IRS23364DSPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
IRS23364DSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFS4310ZPBF irfb4310zpbf.pdf?fileId=5546d462533600a4015356161b4d1e2d
IRFS4310ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
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IRS2127PBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS2127PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFU540ZPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
IRFU540ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A IPAK
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IR2153DPBF description IR2153_D_S_PbF_5-21-20.pdf
IR2153DPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRS20954SPBF description IRS20954SPBF.pdf
IRS20954SPBF
Виробник: Infineon Technologies
Description: IC LINE DRIVER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Channels: 2
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IRF5210LPBF description irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e
IRF5210LPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 38A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
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IRS2153DPBF description IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS2153DPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 1986 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+241.02 грн
10+174.43 грн
50+151.21 грн
100+135.17 грн
250+128.06 грн
500+123.77 грн
1000+118.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR21593PBF description IR21592%2C93%20%28S%29%20%28PbF%29.pdf
IR21593PBF
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 230KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 30kHz ~ 230kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 16.5V
Supplier Device Package: 16-DIP
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
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PVD1354NPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
PVD1354NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 550 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+464.40 грн
10+398.19 грн
25+380.30 грн
50+344.67 грн
100+332.84 грн
250+317.82 грн
500+301.87 грн
1000+291.49 грн
В кошику  од. на суму  грн.
IR21531PBF description ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2223 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+241.02 грн
10+174.43 грн
50+151.21 грн
100+135.17 грн
250+128.06 грн
500+123.77 грн
1000+118.28 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPS1011PBF Part_Number_Guide_Web.pdf
IPS1011PBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
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IR2112PBF description ir2112.pdf?fileId=5546d462533600a4015355c81cb71685
IR2112PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 778 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+313.24 грн
10+228.69 грн
25+210.42 грн
100+178.62 грн
250+169.64 грн
500+164.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF6215LPBF irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2
IRF6215LPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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PVR3301NPBF PVR33N%20(PbF).pdf
PVR3301NPBF
Виробник: Infineon Technologies
Description: SSR RELAY DPST-NO 165MA 0-300V
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IRS2168DPBF description irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DPBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAST CTR 46.5KHZ 16DIP
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IRS2540PBF IRS254%280%2C1%29%28S%29PbF.pdf
IRS2540PBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-PDIP
Dimming: PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 15.6V
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IRGB4045DPBF description IRGB4045DPbF.pdf
IRGB4045DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRS2011PBF description INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
IRS2011PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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