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IRF3805LPBF IRF3805LPBF Infineon Technologies irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
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64-6006PBF 64-6006PBF Infineon Technologies IRFP4242PBF.pdf Description: MOSFET N-CH 300V 46A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 33A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 247 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 25 V
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IRF3805PBF IRF3805PBF Infineon Technologies irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
на замовлення 291 шт:
термін постачання 21-31 дні (днів)
2+277.74 грн
10+177.10 грн
100+125.68 грн
Мінімальне замовлення: 2
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PVA1354NPBF PVA1354NPBF Infineon Technologies pva13n.pdf?fileId=5546d462533600a401535683928a291e Description: SSR RELAY SPST-NO 375MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 375 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
на замовлення 116 шт:
термін постачання 21-31 дні (днів)
1+700.31 грн
10+600.73 грн
25+573.68 грн
50+519.91 грн
100+502.06 грн
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PVT312LPBF PVT312LPBF Infineon Technologies pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
1+487.04 грн
10+418.34 грн
25+399.51 грн
В кошику  од. на суму  грн.
IRF9520NLPBF IRF9520NLPBF Infineon Technologies irf9520nspbf.pdf Description: MOSFET P-CH 100V 6.8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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IRFP4229PBF IRFP4229PBF Infineon Technologies irfp4229pbf.pdf?fileId=5546d462533600a40153562933922008 Description: MOSFET N-CH 250V 44A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
на замовлення 916 шт:
термін постачання 21-31 дні (днів)
2+231.58 грн
25+138.43 грн
100+116.80 грн
500+107.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PVR3300NPBF PVR3300NPBF Infineon Technologies PVR33N%20(PbF).pdf Description: SSR RELAY DPST-NO 165MA 0-300V
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IRF7526D1PBF IRF7526D1PBF Infineon Technologies IRF7526D1PBF.pdf Description: MOSFET P-CH 30V 2A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
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PVA3354NSPBF PVA3354NSPBF Infineon Technologies IRSDS10619-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 150MA 0-300V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 150 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
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IRFS3207PBF IRFS3207PBF Infineon Technologies irfs3207pbf.pdf?fileId=5546d462533600a401535636708e215e Description: MOSFET N-CH 75V 170A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V
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IRS23364DSPBF IRS23364DSPBF Infineon Technologies Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFS4310ZPBF IRFS4310ZPBF Infineon Technologies irfb4310zpbf.pdf?fileId=5546d462533600a4015356161b4d1e2d Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
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IRS2127PBF IRS2127PBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFU540ZPBF IRFU540ZPBF Infineon Technologies irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Description: MOSFET N-CH 100V 35A IPAK
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IR2153DPBF IR2153DPBF Infineon Technologies IR2153_D_S_PbF_5-21-20.pdf description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 477 шт:
термін постачання 21-31 дні (днів)
2+159.16 грн
10+113.34 грн
50+97.43 грн
100+86.81 грн
250+81.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS20954SPBF IRS20954SPBF Infineon Technologies IRS20954SPBF.pdf description Description: IC LINE DRIVER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Channels: 2
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IRF5210LPBF IRF5210LPBF Infineon Technologies irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e description Description: MOSFET P-CH 100V 38A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
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IRS2153DPBF IRS2153DPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2194 шт:
термін постачання 21-31 дні (днів)
2+232.38 грн
10+168.21 грн
50+145.85 грн
100+130.39 грн
250+123.53 грн
500+119.40 грн
1000+114.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR21593PBF IR21593PBF Infineon Technologies IR21592%2C93%20%28S%29%20%28PbF%29.pdf description Description: IC BALLAST CNTRL 230KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 30kHz ~ 230kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 16.5V
Supplier Device Package: 16-DIP
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
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PVD1354NPBF PVD1354NPBF Infineon Technologies pvd13n.pdf?fileId=5546d462533600a401535683b097292f Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 550 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
1+588.10 грн
10+504.25 грн
25+481.53 грн
50+436.42 грн
100+421.43 грн
250+402.40 грн
500+382.20 грн
1000+371.32 грн
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IR21531PBF IR21531PBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2441 шт:
термін постачання 21-31 дні (днів)
2+198.16 грн
10+143.00 грн
50+123.99 грн
100+110.83 грн
250+105.00 грн
500+102.65 грн
Мінімальне замовлення: 2
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IPS1011PBF IPS1011PBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
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IR2112PBF IR2112PBF Infineon Technologies ir2112.pdf?fileId=5546d462533600a4015355c81cb71685 description Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 918 шт:
термін постачання 21-31 дні (днів)
2+316.73 грн
10+231.43 грн
25+212.95 грн
100+180.76 грн
250+171.68 грн
500+166.21 грн
Мінімальне замовлення: 2
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IRF6215LPBF IRF6215LPBF Infineon Technologies irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2 Description: MOSFET P-CH 150V 13A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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PVR3301NPBF PVR3301NPBF Infineon Technologies PVR33N%20(PbF).pdf Description: SSR RELAY DPST-NO 165MA 0-300V
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IRS2168DPBF IRS2168DPBF Infineon Technologies irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 description Description: IC PFC/BALLAST CTR 46.5KHZ 16DIP
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IRS2540PBF IRS2540PBF Infineon Technologies IRS254%280%2C1%29%28S%29PbF.pdf Description: IC LED DRIVER CTRLR PWM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-PDIP
Dimming: PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 15.6V
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IRGB4045DPBF IRGB4045DPBF Infineon Technologies IRGB4045DPbF.pdf description Description: IGBT 600V 12A 77W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
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IRS2011PBF IRS2011PBF Infineon Technologies INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IPS1031PBF IPS1031PBF Infineon Technologies IPS1031%28S%2CR%29PbF.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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IRS26310DJPBF IRS26310DJPBF Infineon Technologies IRS26310DJPbF.pdf description Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR2167SPBF IR2167SPBF Infineon Technologies IR2167(S)PbF.pdf Description: IC PFC/BALLAST CNTL 47KHZ 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 41kHz ~ 47kHz
Type: PFC/Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.4V ~ 16.5V
Supplier Device Package: 20-SOIC
Dimming: No
Current - Supply: 10 mA
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IPS1021PBF IPS1021PBF Infineon Technologies IPS1021(S,R)PbF.pdf description Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 13.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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IRGIB15B60KD1P IRGIB15B60KD1P Infineon Technologies irgib15b60kd1p.pdf?fileId=5546d462533600a40153565250c42432 Description: IGBT 600V 19A 52W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 67 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/173ns
Switching Energy: 127µJ (on), 334µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 38 A
Power - Max: 52 W
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IRFB4229PBF IRFB4229PBF Infineon Technologies irfb4229pbf.pdf?fileId=5546d462533600a401535615fb561e23 Description: MOSFET N-CH 250V 46A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
2+244.31 грн
50+113.92 грн
100+106.89 грн
500+81.64 грн
Мінімальне замовлення: 2
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IRS26302DJPBF IRS26302DJPBF Infineon Technologies irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845 description Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRS2530DSPBF IRS2530DSPBF Infineon Technologies irs2530d.pdf?fileId=5546d462533600a40153567af4f52821 description Description: IC BALLAST CNTRL 115KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 34.2kHz ~ 115kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 8-SOIC
Dimming: Yes
Current - Supply: 5 mA
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AUXAKF1405ZS-7P AUXAKF1405ZS-7P Infineon Technologies irf1405zs-7ppbf.pdf?fileId=5546d462533600a4015355db205718c5 Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
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IR2235SPBF IR2235SPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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PVA3324NPBF PVA3324NPBF Infineon Technologies IRSDS10619-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 150MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 150 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
на замовлення 1563 шт:
термін постачання 21-31 дні (днів)
1+792.63 грн
10+679.51 грн
25+648.87 грн
50+588.04 грн
100+567.86 грн
250+542.22 грн
500+515.00 грн
1000+497.28 грн
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PVT412APBF PVT412APBF Infineon Technologies IRSDS10638-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 240MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 240 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 6 Ohms
на замовлення 631 шт:
термін постачання 21-31 дні (днів)
1+401.09 грн
10+344.01 грн
25+328.54 грн
50+297.75 грн
100+290.27 грн
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PVA3055NSPBF PVA3055NSPBF Infineon Technologies pva30n.pdf?fileId=5546d462533600a4015356839c762923 Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 50 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
1+792.63 грн
10+679.51 грн
25+648.87 грн
50+588.04 грн
100+567.86 грн
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IRFI4020H-117P IRFI4020H-117P Infineon Technologies irfi4020h-117p.pdf?fileId=5546d462533600a401535623e7271f73 Description: MOSFET 2N-CH 200V 9.1A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 21W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.1A
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Obsolete
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IRFSL38N20DPBF IRFSL38N20DPBF Infineon Technologies irfs38n20dpbf.pdf?fileId=5546d462533600a401535636ba7e2181 Description: MOSFET N-CH 200V 43A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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IRS21271SPBF IRS21271SPBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRS2552DSPBF IRS2552DSPBF Infineon Technologies irs2552dpbf.pdf?fileId=5546d462533600a40153567b212d2832 Description: IC CCFL/EEFL CNTRL 69KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 39kHz ~ 69kHz
Type: CCFL/EEFL Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 16-SOIC
Dimming: Yes
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
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IRGB4061DPBF IRGB4061DPBF Infineon Technologies IRGB4061DPBF.pdf description Description: IGBT 600V 36A 206W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 206 W
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IRL3715ZSTRLPBF IRL3715ZSTRLPBF Infineon Technologies IRL3715Z(S,L)PbF.pdf Description: MOSFET N-CH 20V 50A D2PAK
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IRFP4227PBF IRFP4227PBF Infineon Technologies irfp4227pbf.pdf?fileId=5546d462533600a40153562927642004 description Description: MOSFET N-CH 200V 65A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
2+302.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFR3806PBF IRFR3806PBF Infineon Technologies irfr3806pbf.pdf?fileId=5546d462533600a401535631e18720d9 description Description: MOSFET N-CH 60V 43A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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IRFSL4310PBF IRFSL4310PBF Infineon Technologies irfs4310pbf.pdf?fileId=5546d462533600a40153563a0e2e21a7 Description: MOSFET N-CH 100V 130A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 50 V
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PVI5080NPBF PVI5080NPBF Infineon Technologies Infineon-PVI5080N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff8185cd0 Description: OPTOISO 4KV PHOTOVOLTAIC 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 8µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-DIP Modified
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Part Status: Active
Number of Channels: 1
на замовлення 1433 шт:
термін постачання 21-31 дні (днів)
1+479.08 грн
50+279.10 грн
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IRS21853SPBF IRS21853SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRGB4056DPBF IRGB4056DPBF Infineon Technologies irgb4056dpbf.pdf?fileId=5546d462533600a401535651ec3f2417 description Description: IGBT TRENCH 600V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 140 W
товару немає в наявності
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PVI5080NSPBF PVI5080NSPBF Infineon Technologies Infineon-PVI5080N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff8185cd0 Description: OPTOISOLTR 4KV 1CH PHVOLT 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing, 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 8µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Part Status: Active
Number of Channels: 1
на замовлення 4527 шт:
термін постачання 21-31 дні (днів)
1+486.24 грн
50+306.07 грн
100+289.88 грн
500+261.46 грн
В кошику  од. на суму  грн.
IRF2907ZLPBF IRF2907ZLPBF Infineon Technologies irf2907zpbf.pdf?fileId=5546d462533600a4015355ded98f1902 Description: MOSFET N-CH 75V 160A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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IRFS4229PBF IRFS4229PBF Infineon Technologies irfs4229pbf.pdf?fileId=5546d462533600a401535639fdc421a1 Description: MOSFET N-CH 250V 45A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
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IRGB4062DPBF IRGB4062DPBF Infineon Technologies IRG%28B%2CP%294062DPbF%28-EPbF%29.pdf description Description: IGBT TRENCH 600V 48A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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IRFS3607PBF IRFS3607PBF Infineon Technologies irfs3607pbf.pdf?fileId=5546d462533600a401535636a42b2176 Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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IRF3805LPBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
IRF3805LPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
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64-6006PBF IRFP4242PBF.pdf
64-6006PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 46A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 33A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 247 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 25 V
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IRF3805PBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
IRF3805PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
на замовлення 291 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+277.74 грн
10+177.10 грн
100+125.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PVA1354NPBF pva13n.pdf?fileId=5546d462533600a401535683928a291e
PVA1354NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 375MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 375 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
на замовлення 116 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+700.31 грн
10+600.73 грн
25+573.68 грн
50+519.91 грн
100+502.06 грн
В кошику  од. на суму  грн.
PVT312LPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
PVT312LPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+487.04 грн
10+418.34 грн
25+399.51 грн
В кошику  од. на суму  грн.
IRF9520NLPBF irf9520nspbf.pdf
IRF9520NLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 6.8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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IRFP4229PBF irfp4229pbf.pdf?fileId=5546d462533600a40153562933922008
IRFP4229PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 44A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
на замовлення 916 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+231.58 грн
25+138.43 грн
100+116.80 грн
500+107.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PVR3300NPBF PVR33N%20(PbF).pdf
PVR3300NPBF
Виробник: Infineon Technologies
Description: SSR RELAY DPST-NO 165MA 0-300V
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IRF7526D1PBF IRF7526D1PBF.pdf
IRF7526D1PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 2A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
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PVA3354NSPBF IRSDS10619-1.pdf?t.download=true&u=5oefqw
PVA3354NSPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 150MA 0-300V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 150 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
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IRFS3207PBF irfs3207pbf.pdf?fileId=5546d462533600a401535636708e215e
IRFS3207PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 170A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V
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IRS23364DSPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
IRS23364DSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFS4310ZPBF irfb4310zpbf.pdf?fileId=5546d462533600a4015356161b4d1e2d
IRFS4310ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
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IRS2127PBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS2127PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFU540ZPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
IRFU540ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A IPAK
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IR2153DPBF description IR2153_D_S_PbF_5-21-20.pdf
IR2153DPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 477 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.16 грн
10+113.34 грн
50+97.43 грн
100+86.81 грн
250+81.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS20954SPBF description IRS20954SPBF.pdf
IRS20954SPBF
Виробник: Infineon Technologies
Description: IC LINE DRIVER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Number of Channels: 2
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IRF5210LPBF description irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e
IRF5210LPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 38A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
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IRS2153DPBF description IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS2153DPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2194 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+232.38 грн
10+168.21 грн
50+145.85 грн
100+130.39 грн
250+123.53 грн
500+119.40 грн
1000+114.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR21593PBF description IR21592%2C93%20%28S%29%20%28PbF%29.pdf
IR21593PBF
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 230KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 30kHz ~ 230kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 12V ~ 16.5V
Supplier Device Package: 16-DIP
Dimming: Yes
Part Status: Obsolete
Current - Supply: 10 mA
товару немає в наявності
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PVD1354NPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
PVD1354NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 550 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+588.10 грн
10+504.25 грн
25+481.53 грн
50+436.42 грн
100+421.43 грн
250+402.40 грн
500+382.20 грн
1000+371.32 грн
В кошику  од. на суму  грн.
IR21531PBF description ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 2441 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.16 грн
10+143.00 грн
50+123.99 грн
100+110.83 грн
250+105.00 грн
500+102.65 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPS1011PBF Part_Number_Guide_Web.pdf
IPS1011PBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
товару немає в наявності
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IR2112PBF description ir2112.pdf?fileId=5546d462533600a4015355c81cb71685
IR2112PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 918 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+316.73 грн
10+231.43 грн
25+212.95 грн
100+180.76 грн
250+171.68 грн
500+166.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF6215LPBF irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2
IRF6215LPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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PVR3301NPBF PVR33N%20(PbF).pdf
PVR3301NPBF
Виробник: Infineon Technologies
Description: SSR RELAY DPST-NO 165MA 0-300V
товару немає в наявності
В кошику  од. на суму  грн.
IRS2168DPBF description irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DPBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAST CTR 46.5KHZ 16DIP
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IRS2540PBF IRS254%280%2C1%29%28S%29PbF.pdf
IRS2540PBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-PDIP
Dimming: PWM
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 15.6V
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IRGB4045DPBF description IRGB4045DPbF.pdf
IRGB4045DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 12A 77W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 13 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
товару немає в наявності
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IRS2011PBF description INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
IRS2011PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
товару немає в наявності
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IPS1031PBF IPS1031%28S%2CR%29PbF.pdf
IPS1031PBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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IRS26310DJPBF description IRS26310DJPbF.pdf
IRS26310DJPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR2167SPBF IR2167(S)PbF.pdf
IR2167SPBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAST CNTL 47KHZ 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 41kHz ~ 47kHz
Type: PFC/Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.4V ~ 16.5V
Supplier Device Package: 20-SOIC
Dimming: No
Current - Supply: 10 mA
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IPS1021PBF description IPS1021(S,R)PbF.pdf
IPS1021PBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 13.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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IRGIB15B60KD1P irgib15b60kd1p.pdf?fileId=5546d462533600a40153565250c42432
IRGIB15B60KD1P
Виробник: Infineon Technologies
Description: IGBT 600V 19A 52W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 67 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/173ns
Switching Energy: 127µJ (on), 334µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 38 A
Power - Max: 52 W
товару немає в наявності
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IRFB4229PBF irfb4229pbf.pdf?fileId=5546d462533600a401535615fb561e23
IRFB4229PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 46A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+244.31 грн
50+113.92 грн
100+106.89 грн
500+81.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS26302DJPBF description irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845
IRS26302DJPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRS2530DSPBF description irs2530d.pdf?fileId=5546d462533600a40153567af4f52821
IRS2530DSPBF
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 115KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 34.2kHz ~ 115kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 8-SOIC
Dimming: Yes
Current - Supply: 5 mA
товару немає в наявності
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AUXAKF1405ZS-7P irf1405zs-7ppbf.pdf?fileId=5546d462533600a4015355db205718c5
AUXAKF1405ZS-7P
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
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IR2235SPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2235SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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PVA3324NPBF IRSDS10619-1.pdf?t.download=true&u=5oefqw
PVA3324NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 150MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 150 mA
Approval Agency: UL
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
на замовлення 1563 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+792.63 грн
10+679.51 грн
25+648.87 грн
50+588.04 грн
100+567.86 грн
250+542.22 грн
500+515.00 грн
1000+497.28 грн
В кошику  од. на суму  грн.
PVT412APBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
PVT412APBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 240MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 240 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 6 Ohms
на замовлення 631 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+401.09 грн
10+344.01 грн
25+328.54 грн
50+297.75 грн
100+290.27 грн
В кошику  од. на суму  грн.
PVA3055NSPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
PVA3055NSPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 50 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+792.63 грн
10+679.51 грн
25+648.87 грн
50+588.04 грн
100+567.86 грн
В кошику  од. на суму  грн.
IRFI4020H-117P irfi4020h-117p.pdf?fileId=5546d462533600a401535623e7271f73
IRFI4020H-117P
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 200V 9.1A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 21W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.1A
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Obsolete
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IRFSL38N20DPBF irfs38n20dpbf.pdf?fileId=5546d462533600a401535636ba7e2181
IRFSL38N20DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 43A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
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IRS21271SPBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS21271SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRS2552DSPBF irs2552dpbf.pdf?fileId=5546d462533600a40153567b212d2832
IRS2552DSPBF
Виробник: Infineon Technologies
Description: IC CCFL/EEFL CNTRL 69KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 39kHz ~ 69kHz
Type: CCFL/EEFL Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 16-SOIC
Dimming: Yes
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
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IRGB4061DPBF description IRGB4061DPBF.pdf
IRGB4061DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 36A 206W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 206 W
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IRL3715ZSTRLPBF IRL3715Z(S,L)PbF.pdf
IRL3715ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 50A D2PAK
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IRFP4227PBF description irfp4227pbf.pdf?fileId=5546d462533600a40153562927642004
IRFP4227PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 65A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+302.41 грн
Мінімальне замовлення: 2
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IRFR3806PBF description irfr3806pbf.pdf?fileId=5546d462533600a401535631e18720d9
IRFR3806PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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IRFSL4310PBF irfs4310pbf.pdf?fileId=5546d462533600a40153563a0e2e21a7
IRFSL4310PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 130A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 50 V
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PVI5080NPBF Infineon-PVI5080N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff8185cd0
PVI5080NPBF
Виробник: Infineon Technologies
Description: OPTOISO 4KV PHOTOVOLTAIC 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 8µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-DIP Modified
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Part Status: Active
Number of Channels: 1
на замовлення 1433 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+479.08 грн
50+279.10 грн
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IRS21853SPBF fundamentals-of-power-semiconductors
IRS21853SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRGB4056DPBF description irgb4056dpbf.pdf?fileId=5546d462533600a401535651ec3f2417
IRGB4056DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 31ns/83ns
Switching Energy: 75µJ (on), 225µJ (off)
Test Condition: 400V, 12A, 22Ohm, 15V
Gate Charge: 25 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 140 W
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PVI5080NSPBF Infineon-PVI5080N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff8185cd0
PVI5080NSPBF
Виробник: Infineon Technologies
Description: OPTOISOLTR 4KV 1CH PHVOLT 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing, 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 8µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Part Status: Active
Number of Channels: 1
на замовлення 4527 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+486.24 грн
50+306.07 грн
100+289.88 грн
500+261.46 грн
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IRF2907ZLPBF irf2907zpbf.pdf?fileId=5546d462533600a4015355ded98f1902
IRF2907ZLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 160A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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IRFS4229PBF irfs4229pbf.pdf?fileId=5546d462533600a401535639fdc421a1
IRFS4229PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 45A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
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IRGB4062DPBF description IRG%28B%2CP%294062DPbF%28-EPbF%29.pdf
IRGB4062DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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IRFS3607PBF irfs3607pbf.pdf?fileId=5546d462533600a401535636a42b2176
IRFS3607PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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