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IRFS3806PBF IRFS3806PBF Infineon Technologies irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a Description: MOSFET N-CH 60V 43A D2PAK
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IRF1018ESPBF IRF1018ESPBF Infineon Technologies irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891 description Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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IRFR3607PBF IRFR3607PBF Infineon Technologies irfr3607pbf.pdf?fileId=5546d462533600a401535631463620a7 description Description: MOSFET N-CH 75V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IR1150IPBF IR1150IPBF Infineon Technologies IR1150%28S%29%28PbF%29%2C%20IR1150I%28S%29%28PbF%29.pdf Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
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IRFI4019H-117P IRFI4019H-117P Infineon Technologies irfi4019h-117p.pdf?fileId=5546d462533600a401535623d74d1f6f Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
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 Мінімальне замовлення: 1000 шт
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IR1150PBF IR1150PBF Infineon Technologies IR1150%28S%29%28PbF%29%2C%20IR1150I%28S%29%28PbF%29.pdf Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
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IRF7521D1PBF IRF7521D1PBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 20V 2.4A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
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IRS2336JPBF IRS2336JPBF Infineon Technologies Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRL3103D1SPBF IRL3103D1SPBF Infineon Technologies IRL3103D1SPBF.pdf Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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IRFB4233PBF IRFB4233PBF Infineon Technologies IRFB4233PBF.pdf Description: MOSFET N-CH 230V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 28A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 230 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
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IR2135PBF IR2135PBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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PVD1352NPBF PVD1352NPBF Infineon Technologies pvd13n.pdf?fileId=5546d462533600a401535683b097292f Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 550 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 1747 шт:
термін постачання 21-31 дні (днів)
1+489.24 грн
10+420.03 грн
25+401.11 грн
50+363.52 грн
100+351.04 грн
250+335.20 грн
500+318.37 грн
1000+307.43 грн
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IRLR3114ZPBF IRLR3114ZPBF Infineon Technologies irlr3114zpbf.pdf?fileId=5546d462533600a40153566d002d268d description Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
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IRGSL6B60KPBF IRGSL6B60KPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V 13A 90W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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IR2167PBF IR2167PBF Infineon Technologies IR2167%28S%29PbF.pdf Description: IC PFC/BALLAST CNTRL 47KHZ 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 41kHz ~ 47kHz
Type: PFC/Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.4V ~ 16.5V
Supplier Device Package: 20-PDIP
Dimming: No
Current - Supply: 10 mA
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IRF5305LPBF IRF5305LPBF Infineon Technologies irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995 Description: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRF3704ZCLPBF IRF3704ZCLPBF Infineon Technologies irf3704zcspbf.pdf Description: MOSFET N-CH 20V 67A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
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IRFI4024H-117P IRFI4024H-117P Infineon Technologies IRFI4024H-117P.pdf Description: MOSFET 2N-CH 55V 11A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 14W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 11A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 60mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Obsolete
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IRL1404ZLPBF IRL1404ZLPBF Infineon Technologies irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5 Description: MOSFET N-CH 40V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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PVD1352NSPBF PVD1352NSPBF Infineon Technologies pvd13n.pdf?fileId=5546d462533600a401535683b097292f Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 550 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 1180 шт:
термін постачання 21-31 дні (днів)
1+470.21 грн
10+403.31 грн
25+385.17 грн
50+349.06 грн
100+337.10 грн
250+321.88 грн
500+305.73 грн
1000+295.22 грн
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IRF3805LPBF IRF3805LPBF Infineon Technologies irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.
64-6006PBF 64-6006PBF Infineon Technologies IRFP4242PBF.pdf Description: MOSFET N-CH 300V 46A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 33A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 247 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 25 V
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IRF3805PBF IRF3805PBF Infineon Technologies irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962 Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
2+314.79 грн
10+200.74 грн
Мінімальне замовлення: 2 шт
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PVA1354NPBF PVA1354NPBF Infineon Technologies infineon-pva13n-datasheet-en.pdf Description: SSR RELAY SPST-NO 375MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 375 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
на замовлення 1434 шт:
термін постачання 21-31 дні (днів)
1+615.31 грн
10+527.77 грн
25+504.01 грн
50+456.77 грн
100+441.09 грн
250+421.18 грн
500+400.04 грн
1000+386.28 грн
В кошику  од. на суму  грн.
PVT312LPBF PVT312LPBF Infineon Technologies pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Description: SSR RELAY SPST-NO 170MA 0-250V
Relay Type: Photo-Coupled Relay (Photorelay)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 15 Ohms
Voltage - Load: 0 V ~ 250 V
Part Status: Active
Supplier Device Package: 6-DIP
Load Current: 170 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
1+342.55 грн
10+293.74 грн
25+280.53 грн
50+254.24 грн
100+245.53 грн
250+234.45 грн
500+222.69 грн
В кошику  од. на суму  грн.
IRF9520NLPBF IRF9520NLPBF Infineon Technologies irf9520nspbf.pdf Description: MOSFET P-CH 100V 6.8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 550 шт
В кошику  од. на суму  грн.
IRFP4229PBF IRFP4229PBF Infineon Technologies irfp4229pbf.pdf?fileId=5546d462533600a40153562933922008 Description: MOSFET N-CH 250V 44A TO247AC
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
PVR3300NPBF PVR3300NPBF Infineon Technologies PVR33N%20(PbF).pdf Description: SSR RELAY DPST-NO 165MA 0-300V
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IRF7526D1PBF IRF7526D1PBF Infineon Technologies IRF7526D1PBF.pdf Description: MOSFET P-CH 30V 2A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1440 шт
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PVA3354NSPBF PVA3354NSPBF Infineon Technologies IRSDS10619-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 150MA 0-300V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 150 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
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IRFS3207PBF IRFS3207PBF Infineon Technologies irfs3207pbf.pdf?fileId=5546d462533600a401535636708e215e Description: MOSFET N-CH 75V 170A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRS23364DSPBF IRS23364DSPBF Infineon Technologies Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Description: IC GATE DRVR HALF-BRIDGE 28SOIC
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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IRFS4310ZPBF IRFS4310ZPBF Infineon Technologies irfb4310zpbf.pdf?fileId=5546d462533600a4015356161b4d1e2d Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
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IRS2127PBF IRS2127PBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFU540ZPBF IRFU540ZPBF Infineon Technologies irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Description: MOSFET N-CH 100V 35A IPAK
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IR2153DPBF IR2153DPBF Infineon Technologies IR2153_D_S_PbF_5-21-20.pdf description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IRS20954SPBF IRS20954SPBF Infineon Technologies IRS20954SPBF.pdf description Description: IC LINE DRIVER 16SOIC
Number of Channels: 2
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Applications: Audio Systems
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Interface: Analog
Function: Line Driver
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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IRF5210LPBF IRF5210LPBF Infineon Technologies irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e description Description: MOSFET P-CH 100V 38A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
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IRS2153DPBF IRS2153DPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IR21593PBF IR21593PBF Infineon Technologies IR21592%2C93%20%28S%29%20%28PbF%29.pdf description Description: IC BALLAST CNTRL 230KHZ 16DIP
Current - Supply: 10 mA
Part Status: Obsolete
Dimming: Yes
Supplier Device Package: 16-DIP
Voltage - Supply: 12V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 30kHz ~ 230kHz
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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PVD1354NPBF PVD1354NPBF Infineon Technologies pvd13n.pdf?fileId=5546d462533600a401535683b097292f Description: SSR RELAY SPST-NO 550MA 0-100V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 100 V
Part Status: Active
Supplier Device Package: 8-DIP Modified
Load Current: 550 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
на замовлення 1416 шт:
термін постачання 21-31 дні (днів)
1+582.80 грн
10+499.52 грн
25+477.01 грн
50+432.34 грн
100+417.50 грн
250+398.64 грн
500+378.63 грн
1000+365.61 грн
В кошику  од. на суму  грн.
IR21531PBF IR21531PBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IPS1011PBF IPS1011PBF Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
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IR2112PBF IR2112PBF Infineon Technologies infineon-ir2112-ds-en.pdf description Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
2+309.24 грн
10+225.71 грн
25+207.66 грн
100+176.29 грн
250+167.43 грн
500+162.09 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6215LPBF IRF6215LPBF Infineon Technologies irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2 Description: MOSFET P-CH 150V 13A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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PVR3301NPBF PVR3301NPBF Infineon Technologies PVR33N%20(PbF).pdf Description: SSR RELAY DPST-NO 165MA 0-300V
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IRS2168DPBF IRS2168DPBF Infineon Technologies irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 description Description: IC PFC/BALLAST CTR 46.5KHZ 16DIP
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IRS2540PBF IRS2540PBF Infineon Technologies IRS254%280%2C1%29%28S%29PbF.pdf Description: IC LED DRIVER CTRLR PWM 8DIP
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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IRGB4045DPBF IRGB4045DPBF Infineon Technologies IRGB4045DPbF.pdf description Description: IGBT TRENCH 600V 12A TO-220AB
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
IGBT Type: Trench
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRS2011PBF IRS2011PBF Infineon Technologies INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 1A, 1A
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
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IPS1031PBF IPS1031PBF Infineon Technologies IPS1031%28S%2CR%29PbF.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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IRS26310DJPBF IRS26310DJPBF Infineon Technologies IRS26310DJPbF.pdf description Description: IC GATE DRVR HALF-BRIDGE 44PLCC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 12V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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IR2167SPBF IR2167SPBF Infineon Technologies IR2167(S)PbF.pdf Description: IC PFC/BALLAST CNTL 47KHZ 20SOIC
Current - Supply: 10 mA
Dimming: No
Supplier Device Package: 20-SOIC
Voltage - Supply: 10.4V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: PFC/Ballast Controller
Frequency: 41kHz ~ 47kHz
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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IPS1021PBF IPS1021PBF Infineon Technologies IPS1021%28S%2CR%29PbF.pdf description Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-220AB
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Ratio - Input:Output: 1:1
Current - Output (Max): 13.5A
Packaging: Tube
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IRGIB15B60KD1P IRGIB15B60KD1P Infineon Technologies irgib15b60kd1p.pdf?fileId=5546d462533600a40153565250c42432 Description: IGBT 600V 19A 52W TO220FP
Power - Max: 52 W
Current - Collector Pulsed (Icm): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Gate Charge: 56 nC
Test Condition: 400V, 15A, 22Ohm, 15V
Switching Energy: 127µJ (on), 334µJ (off)
Td (on/off) @ 25°C: 30ns/173ns
IGBT Type: NPT
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Reverse Recovery Time (trr): 67 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IRFB4229PBF IRFB4229PBF Infineon Technologies irfb4229pbf.pdf?fileId=5546d462533600a401535615fb561e23 Description: MOSFET N-CH 250V 46A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
2+307.66 грн
10+194.86 грн
50+151.31 грн
100+128.83 грн
500+105.75 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS26302DJPBF IRS26302DJPBF Infineon Technologies irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845 description Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
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IRS2530DSPBF IRS2530DSPBF Infineon Technologies irs2530d.pdf?fileId=5546d462533600a40153567af4f52821 description Description: IC BALLAST CNTRL 115KHZ 8SOIC
Current - Supply: 5 mA
Dimming: Yes
Supplier Device Package: 8-SOIC
Voltage - Supply: 11.5V ~ 16.6V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 34.2kHz ~ 115kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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AUXAKF1405ZS-7P AUXAKF1405ZS-7P Infineon Technologies irf1405zs-7ppbf.pdf?fileId=5546d462533600a4015355db205718c5 Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
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IR2235SPBF IR2235SPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 90ns, 40ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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IRFS3806PBF irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a
IRFS3806PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A D2PAK
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IRF1018ESPBF description irf1018epbf.pdf?fileId=5546d462533600a4015355da854e1891
IRF1018ESPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 79A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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IRFR3607PBF description irfr3607pbf.pdf?fileId=5546d462533600a401535631463620a7
IRFR3607PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IR1150IPBF IR1150%28S%29%28PbF%29%2C%20IR1150I%28S%29%28PbF%29.pdf
IR1150IPBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
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IRFI4019H-117P irfi4019h-117p.pdf?fileId=5546d462533600a401535623d74d1f6f
IRFI4019H-117P
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
товару немає в наявності
Мінімальне замовлення: 1000 шт
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IR1150PBF IR1150%28S%29%28PbF%29%2C%20IR1150I%28S%29%28PbF%29.pdf
IR1150PBF
Виробник: Infineon Technologies
Description: IC PFC CTRLR CCM 200KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 15V ~ 20V
Frequency - Switching: 200kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Current - Startup: 175 µA
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IRF7521D1PBF IR_PartNumberingSystem.pdf
IRF7521D1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 2.4A MICRO8
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: Micro8™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
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IRS2336JPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
IRS2336JPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRL3103D1SPBF IRL3103D1SPBF.pdf
IRL3103D1SPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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IRFB4233PBF IRFB4233PBF.pdf
IRFB4233PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 230V 56A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 28A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 230 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
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IR2135PBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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PVD1352NPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
PVD1352NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 550 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 1747 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+489.24 грн
10+420.03 грн
25+401.11 грн
50+363.52 грн
100+351.04 грн
250+335.20 грн
500+318.37 грн
1000+307.43 грн
В кошику  од. на суму  грн.
IRLR3114ZPBF description irlr3114zpbf.pdf?fileId=5546d462533600a40153566d002d268d
IRLR3114ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
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IRGSL6B60KPBF Part_Number_Guide_Web.pdf
IRGSL6B60KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 13A 90W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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IR2167PBF IR2167%28S%29PbF.pdf
IR2167PBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAST CNTRL 47KHZ 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 41kHz ~ 47kHz
Type: PFC/Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.4V ~ 16.5V
Supplier Device Package: 20-PDIP
Dimming: No
Current - Supply: 10 mA
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IRF5305LPBF irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995
IRF5305LPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRF3704ZCLPBF irf3704zcspbf.pdf
IRF3704ZCLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 67A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
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IRFI4024H-117P IRFI4024H-117P.pdf
IRFI4024H-117P
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 11A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 14W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 11A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Rds On (Max) @ Id, Vgs: 60mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Obsolete
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IRL1404ZLPBF irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5
IRL1404ZLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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PVD1352NSPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
PVD1352NSPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-100V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 550 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 1180 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+470.21 грн
10+403.31 грн
25+385.17 грн
50+349.06 грн
100+337.10 грн
250+321.88 грн
500+305.73 грн
1000+295.22 грн
В кошику  од. на суму  грн.
IRF3805LPBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
IRF3805LPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.
64-6006PBF IRFP4242PBF.pdf
64-6006PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 46A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 33A, 10V
Power Dissipation (Max): 430W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 247 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 25 V
товару немає в наявності
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IRF3805PBF irf3805pbf.pdf?fileId=5546d462533600a4015355dfe2a31962
IRF3805PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+314.79 грн
10+200.74 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PVA1354NPBF infineon-pva13n-datasheet-en.pdf
PVA1354NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 375MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 375 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
на замовлення 1434 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+615.31 грн
10+527.77 грн
25+504.01 грн
50+456.77 грн
100+441.09 грн
250+421.18 грн
500+400.04 грн
1000+386.28 грн
В кошику  од. на суму  грн.
PVT312LPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
PVT312LPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Relay Type: Photo-Coupled Relay (Photorelay)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 15 Ohms
Voltage - Load: 0 V ~ 250 V
Part Status: Active
Supplier Device Package: 6-DIP
Load Current: 170 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+342.55 грн
10+293.74 грн
25+280.53 грн
50+254.24 грн
100+245.53 грн
250+234.45 грн
500+222.69 грн
В кошику  од. на суму  грн.
IRF9520NLPBF irf9520nspbf.pdf
IRF9520NLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 6.8A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 550 шт
В кошику  од. на суму  грн.
IRFP4229PBF irfp4229pbf.pdf?fileId=5546d462533600a40153562933922008
IRFP4229PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 44A TO247AC
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
PVR3300NPBF PVR33N%20(PbF).pdf
PVR3300NPBF
Виробник: Infineon Technologies
Description: SSR RELAY DPST-NO 165MA 0-300V
товару немає в наявності
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IRF7526D1PBF IRF7526D1PBF.pdf
IRF7526D1PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 2A MICRO8
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Micro8™
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1440 шт
В кошику  од. на суму  грн.
PVA3354NSPBF IRSDS10619-1.pdf?t.download=true&u=5oefqw
PVA3354NSPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 150MA 0-300V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 150 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
товару немає в наявності
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IRFS3207PBF irfs3207pbf.pdf?fileId=5546d462533600a401535636708e215e
IRFS3207PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 170A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRS23364DSPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
IRS23364DSPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 11.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
товару немає в наявності
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IRFS4310ZPBF irfb4310zpbf.pdf?fileId=5546d462533600a4015356161b4d1e2d
IRFS4310ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
товару немає в наявності
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IRS2127PBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS2127PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRFU540ZPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
IRFU540ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A IPAK
товару немає в наявності
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IR2153DPBF description IR2153_D_S_PbF_5-21-20.pdf
IR2153DPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
товару немає в наявності
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IRS20954SPBF description IRS20954SPBF.pdf
IRS20954SPBF
Виробник: Infineon Technologies
Description: IC LINE DRIVER 16SOIC
Number of Channels: 2
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Applications: Audio Systems
Voltage - Supply: 10V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Interface: Analog
Function: Line Driver
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
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IRF5210LPBF description irf5210spbf.pdf?fileId=5546d462533600a4015355e35f77198e
IRF5210LPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 38A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
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IRS2153DPBF description IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS2153DPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IR21593PBF description IR21592%2C93%20%28S%29%20%28PbF%29.pdf
IR21593PBF
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 230KHZ 16DIP
Current - Supply: 10 mA
Part Status: Obsolete
Dimming: Yes
Supplier Device Package: 16-DIP
Voltage - Supply: 12V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 30kHz ~ 230kHz
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
товару немає в наявності
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PVD1354NPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
PVD1354NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-100V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 1.5 Ohms
Voltage - Load: 0 V ~ 100 V
Part Status: Active
Supplier Device Package: 8-DIP Modified
Load Current: 550 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
на замовлення 1416 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+582.80 грн
10+499.52 грн
25+477.01 грн
50+432.34 грн
100+417.50 грн
250+398.64 грн
500+378.63 грн
1000+365.61 грн
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IR21531PBF description ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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IPS1011PBF Part_Number_Guide_Web.pdf
IPS1011PBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
товару немає в наявності
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IR2112PBF description infineon-ir2112-ds-en.pdf
IR2112PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+309.24 грн
10+225.71 грн
25+207.66 грн
100+176.29 грн
250+167.43 грн
500+162.09 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRF6215LPBF irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2
IRF6215LPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 150V 13A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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PVR3301NPBF PVR33N%20(PbF).pdf
PVR3301NPBF
Виробник: Infineon Technologies
Description: SSR RELAY DPST-NO 165MA 0-300V
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IRS2168DPBF description irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DPBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAST CTR 46.5KHZ 16DIP
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IRS2540PBF IRS254%280%2C1%29%28S%29PbF.pdf
IRS2540PBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8DIP
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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IRGB4045DPBF description IRGB4045DPbF.pdf
IRGB4045DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO-220AB
Power - Max: 77 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 6A, 47Ohm, 15V
Switching Energy: 56µJ (on), 122µJ (off)
Td (on/off) @ 25°C: 27ns/75ns
IGBT Type: Trench
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRS2011PBF description INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
IRS2011PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 1A, 1A
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
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IPS1031PBF IPS1031%28S%2CR%29PbF.pdf
IPS1031PBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.5A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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IRS26310DJPBF description IRS26310DJPbF.pdf
IRS26310DJPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 12V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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IR2167SPBF IR2167(S)PbF.pdf
IR2167SPBF
Виробник: Infineon Technologies
Description: IC PFC/BALLAST CNTL 47KHZ 20SOIC
Current - Supply: 10 mA
Dimming: No
Supplier Device Package: 20-SOIC
Voltage - Supply: 10.4V ~ 16.5V
Operating Temperature: -40°C ~ 125°C
Type: PFC/Ballast Controller
Frequency: 41kHz ~ 47kHz
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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IPS1021PBF description IPS1021%28S%2CR%29PbF.pdf
IPS1021PBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Over Temperature
Supplier Device Package: TO-220AB
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 28V (Max)
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: N-Channel
Package / Case: TO-220-3
Ratio - Input:Output: 1:1
Current - Output (Max): 13.5A
Packaging: Tube
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IRGIB15B60KD1P irgib15b60kd1p.pdf?fileId=5546d462533600a40153565250c42432
IRGIB15B60KD1P
Виробник: Infineon Technologies
Description: IGBT 600V 19A 52W TO220FP
Power - Max: 52 W
Current - Collector Pulsed (Icm): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Gate Charge: 56 nC
Test Condition: 400V, 15A, 22Ohm, 15V
Switching Energy: 127µJ (on), 334µJ (off)
Td (on/off) @ 25°C: 30ns/173ns
IGBT Type: NPT
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Reverse Recovery Time (trr): 67 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IRFB4229PBF irfb4229pbf.pdf?fileId=5546d462533600a401535615fb561e23
IRFB4229PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 46A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+307.66 грн
10+194.86 грн
50+151.31 грн
100+128.83 грн
500+105.75 грн
Мінімальне замовлення: 2 шт
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IRS26302DJPBF description irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845
IRS26302DJPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
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IRS2530DSPBF description irs2530d.pdf?fileId=5546d462533600a40153567af4f52821
IRS2530DSPBF
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 115KHZ 8SOIC
Current - Supply: 5 mA
Dimming: Yes
Supplier Device Package: 8-SOIC
Voltage - Supply: 11.5V ~ 16.6V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 34.2kHz ~ 115kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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AUXAKF1405ZS-7P irf1405zs-7ppbf.pdf?fileId=5546d462533600a4015355db205718c5
AUXAKF1405ZS-7P
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
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IR2235SPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2235SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 90ns, 40ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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