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IRGIB15B60KD1P IRGIB15B60KD1P Infineon Technologies irgib15b60kd1p.pdf?fileId=5546d462533600a40153565250c42432 Description: IGBT 600V 19A 52W TO220FP
Power - Max: 52 W
Current - Collector Pulsed (Icm): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Gate Charge: 56 nC
Test Condition: 400V, 15A, 22Ohm, 15V
Switching Energy: 127µJ (on), 334µJ (off)
Td (on/off) @ 25°C: 30ns/173ns
IGBT Type: NPT
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Reverse Recovery Time (trr): 67 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IRFB4229PBF IRFB4229PBF Infineon Technologies irfb4229pbf.pdf?fileId=5546d462533600a401535615fb561e23 Description: MOSFET N-CH 250V 46A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
на замовлення 935 шт:
термін постачання 21-31 дні (днів)
2+228.60 грн
50+110.74 грн
100+100.10 грн
500+76.46 грн
Мінімальне замовлення: 2 шт
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IRS26302DJPBF IRS26302DJPBF Infineon Technologies irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845 description Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
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IRS2530DSPBF IRS2530DSPBF Infineon Technologies irs2530d.pdf?fileId=5546d462533600a40153567af4f52821 description Description: IC BALLAST CNTRL 115KHZ 8SOIC
Current - Supply: 5 mA
Dimming: Yes
Supplier Device Package: 8-SOIC
Voltage - Supply: 11.5V ~ 16.6V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 34.2kHz ~ 115kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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AUXAKF1405ZS-7P AUXAKF1405ZS-7P Infineon Technologies irf1405zs-7ppbf.pdf?fileId=5546d462533600a4015355db205718c5 Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
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IR2235SPBF IR2235SPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 90ns, 40ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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PVA3324NPBF PVA3324NPBF Infineon Technologies IRSDS10619-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 150MA 0-300V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 24 Ohms
Voltage - Load: 0 V ~ 300 V
Part Status: Active
Supplier Device Package: 8-DIP Modified
Load Current: 150 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
на замовлення 878 шт:
термін постачання 21-31 дні (днів)
1+547.86 грн
10+469.51 грн
25+448.38 грн
50+406.38 грн
100+392.43 грн
250+374.72 грн
500+355.91 грн
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PVT412APBF PVT412APBF Infineon Technologies IRSDS10638-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 240MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 240 mA
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 6 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 2526 шт:
термін постачання 21-31 дні (днів)
1+423.10 грн
10+362.88 грн
25+346.48 грн
50+314.04 грн
100+303.26 грн
250+289.58 грн
500+275.05 грн
1000+265.59 грн
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PVA3055NSPBF PVA3055NSPBF Infineon Technologies pva30n.pdf?fileId=5546d462533600a4015356839c762923 Description: SSR RELAY SPST-NO 50MA 0-300V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 160 Ohms
Voltage - Load: 0 V ~ 300 V
Supplier Device Package: 8-SMD
Load Current: 50 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
1+771.81 грн
10+661.66 грн
25+631.83 грн
50+572.60 грн
100+552.95 грн
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IRFI4020H-117P IRFI4020H-117P Infineon Technologies irfi4020h-117p.pdf?fileId=5546d462533600a401535623e7271f73 Description: MOSFET 2N-CH 200V 9.1A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 21W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.1A
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Obsolete
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IRFSL38N20DPBF IRFSL38N20DPBF Infineon Technologies irfs38n20dpbf.pdf?fileId=5546d462533600a401535636ba7e2181 Description: MOSFET N-CH 200V 43A TO262
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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IRS21271SPBF IRS21271SPBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRS2552DSPBF IRS2552DSPBF Infineon Technologies irs2552dpbf.pdf?fileId=5546d462533600a40153567b212d2832 Description: IC CCFL/EEFL CNTRL 69KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 39kHz ~ 69kHz
Type: CCFL/EEFL Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 16-SOIC
Dimming: Yes
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
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IRGB4061DPBF IRGB4061DPBF Infineon Technologies IRGB4061DPBF.pdf description Description: IGBT 600V 36A 206W TO220AB
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 206 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 36 A
Part Status: Obsolete
Gate Charge: 35 nC
Test Condition: 400V, 18A, 22Ohm, 15V
Switching Energy: 95µJ (on), 350µJ (off)
Td (on/off) @ 25°C: 40ns/105ns
IGBT Type: Trench
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IRL3715ZSTRLPBF IRL3715ZSTRLPBF Infineon Technologies IRL3715Z(S,L)PbF.pdf Description: MOSFET N-CH 20V 50A D2PAK
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IRFP4227PBF IRFP4227PBF Infineon Technologies irfp4227pbf.pdf?fileId=5546d462533600a40153562927642004 description Description: MOSFET N-CH 200V 65A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
 Мінімальне замовлення: 400 шт
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IRFR3806PBF IRFR3806PBF Infineon Technologies irfr3806pbf.pdf?fileId=5546d462533600a401535631e18720d9 description Description: MOSFET N-CH 60V 43A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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IRFSL4310PBF IRFSL4310PBF Infineon Technologies irfs4310pbf.pdf?fileId=5546d462533600a40153563a0e2e21a7 Description: MOSFET N-CH 100V 130A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 50 V
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PVI5080NPBF PVI5080NPBF Infineon Technologies Infineon-PVI5080N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff8185cd0 Description: OPTOISO 4KV PHVOLT 8DIP MODIFIED
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 8µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-DIP Modified
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Part Status: Active
Number of Channels: 1
на замовлення 1299 шт:
термін постачання 21-31 дні (днів)
1+433.95 грн
50+268.66 грн
100+253.73 грн
500+213.26 грн
1000+205.19 грн
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IRS21853SPBF IRS21853SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 16SOIC
DigiKey Programmable: Not Verified
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 16-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Gate Type: IGBT, N-Channel MOSFET
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IRGB4056DPBF IRGB4056DPBF Infineon Technologies irgb4056dpbf.pdf?fileId=5546d462533600a401535651ec3f2417 description Description: IGBT TRENCH 600V 24A TO-220AB
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Reverse Recovery Time (trr): 68 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 140 W
Current - Collector Pulsed (Icm): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 24 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 75µJ (on), 225µJ (off)
Td (on/off) @ 25°C: 31ns/83ns
IGBT Type: Trench
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PVI5080NSPBF PVI5080NSPBF Infineon Technologies Infineon-PVI5080N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff8185cd0 Description: OPTOISOLTR 4KV 1CH PHVOLT 8-SMD
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Voltage - Output (Max): 5V
Supplier Device Package: 8-SMD
Voltage - Isolation: 4000Vrms
Current - Output / Channel: 8µA
Input Type: DC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 8-SMD, Gull Wing, 4 Leads
Packaging: Tube
на замовлення 3008 шт:
термін постачання 21-31 дні (днів)
1+439.37 грн
50+272.47 грн
100+257.37 грн
500+216.40 грн
1000+208.24 грн
2000+201.34 грн
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IRF2907ZLPBF IRF2907ZLPBF Infineon Technologies irf2907zpbf.pdf?fileId=5546d462533600a4015355ded98f1902 Description: MOSFET N-CH 75V 160A TO262
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
 Мінімальне замовлення: 3200 шт
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IRFS4229PBF IRFS4229PBF Infineon Technologies irfs4229pbf.pdf?fileId=5546d462533600a401535639fdc421a1 Description: MOSFET N-CH 250V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRGB4062DPBF IRGB4062DPBF Infineon Technologies IRG%28B%2CP%294062DPbF%28-EPbF%29.pdf description Description: IGBT TRENCH 600V 48A TO-220AB
Power - Max: 250 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Part Status: Obsolete
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
IGBT Type: Trench
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRFS3607PBF IRFS3607PBF Infineon Technologies irfs3607pbf.pdf?fileId=5546d462533600a401535636a42b2176 Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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IRS21953SPBF IRS21953SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF BRD/LOW 16SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 500mA, 500mA
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge, Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 25ns
Supplier Device Package: 16-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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PVDZ172NPBF PVDZ172NPBF Infineon Technologies pvdz172.pdf?fileId=5546d462533600a401535683ba592934 description Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1.5 A
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 1919 шт:
термін постачання 21-31 дні (днів)
1+513.76 грн
10+441.01 грн
25+421.22 грн
50+381.73 грн
100+368.64 грн
250+351.99 грн
500+334.33 грн
1000+322.83 грн
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IRL3715ZCSTRLP IRL3715ZCSTRLP Infineon Technologies irl3715zcspbf.pdf Description: MOSFET N-CH 20V 50A D2PAK
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IRL2703STRLPBF IRL2703STRLPBF Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 30V 24A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3805L-7PPBF IRF3805L-7PPBF Infineon Technologies IRSDS18836-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 150 шт
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PVG612PBF PVG612PBF Infineon Technologies pvg612.pdf?fileId=5546d462533600a401535683c1892937 Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 3340 шт:
термін постачання 21-31 дні (днів)
1+549.41 грн
10+471.60 грн
25+450.29 грн
50+408.11 грн
100+394.11 грн
250+376.32 грн
500+357.43 грн
1000+345.14 грн
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IRL3714STRLPBF IRL3714STRLPBF Infineon Technologies IRL3714(S,L)PbF.pdf Description: MOSFET N-CH 20V 36A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
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IR2125PBF IR2125PBF Infineon Technologies infineon-ir2125-ds-en.pdf Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 0V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 43ns, 26ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1.6A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1462 шт:
термін постачання 21-31 дні (днів)
1+331.66 грн
10+242.00 грн
50+210.86 грн
100+188.83 грн
250+179.26 грн
500+173.50 грн
1000+165.99 грн
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PVR2300NPBF PVR2300NPBF Infineon Technologies PVR33N%20(PbF).pdf Description: SSR RELAY DPST-NO 165MA 0-200V
Voltage - Load: 0 V ~ 200 V
Part Status: Obsolete
Supplier Device Package: 16-DIP
Load Current: 165 mA
Termination Style: PC Pin
Circuit: DPST-NO (2 Form A) x 2
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Packaging: Tube
On-State Resistance (Max): 24 Ohms
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IPS7071GPBF IPS7071GPBF Infineon Technologies IPS7071GPbF_6-24-07.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Auto Restart
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
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IRFI4229PBF IRFI4229PBF Infineon Technologies irfi4229pbf.pdf?fileId=5546d462533600a40153562416651f80 Description: MOSFET N-CH 250V 19A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 436 шт:
термін постачання 21-31 дні (днів)
2+259.59 грн
50+198.37 грн
100+170.05 грн
Мінімальне замовлення: 2 шт
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PVA1352NSPBF PVA1352NSPBF Infineon Technologies pva13n.pdf?fileId=5546d462533600a401535683928a291e Description: SSR RELAY SPST-NO 375MA 0-100V
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Part Status: Active
Supplier Device Package: 8-SMD
Load Current: 375 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
на замовлення 1468 шт:
термін постачання 21-31 дні (днів)
1+654.02 грн
10+561.07 грн
25+535.78 грн
50+485.58 грн
100+468.91 грн
250+447.74 грн
500+425.26 грн
1000+410.63 грн
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IRS2092SPBF IRS2092SPBF Infineon Technologies IRS2092.pdf description Description: IC AUDIO AMP D 16-SOIC
Packaging: Tube
Features: Depop, Short-Circuit Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Discontinued at Digi-Key
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IRL3714ZSTRLPBF IRL3714ZSTRLPBF Infineon Technologies IRL3714Z(S,L)PbF.pdf Description: MOSFET N-CH 20V 36A D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
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PVI5033RSPBF PVI5033RSPBF Infineon Technologies IRSDS10627-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 3.75KV 2CH PHVOLT 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 40 mA
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
1+819.08 грн
50+533.36 грн
100+507.97 грн
500+434.54 грн
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IRL3715STRLPBF IRL3715STRLPBF Infineon Technologies IRL3715%28S%2CL%29PbF.pdf Description: MOSFET N-CH 20V 54A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IRF3704ZSTRLPBF IRF3704ZSTRLPBF Infineon Technologies irf3704zpbf.pdf?fileId=5546d462533600a4015355df54f71929 Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRL3302STRLPBF IRL3302STRLPBF Infineon Technologies IRL3302SPbF.pdf Description: MOSFET N-CH 20V 39A D2PAK
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IRF520NSTRLPBF IRF520NSTRLPBF Infineon Technologies irf520nspbf.pdf Description: MOSFET N-CH 100V 9.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRF3704ZCSTRLP IRF3704ZCSTRLP Infineon Technologies irf3704zcspbf.pdf Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
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PVAZ172NPBF PVAZ172NPBF Infineon Technologies pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4 Description: SSR RELAY SPST-NO 1A 0-60V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 8-DIP Modified
Load Current: 1 A
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
1+1053.87 грн
10+904.03 грн
25+863.24 грн
50+782.32 грн
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IRFZ24NSTRLPBF IRFZ24NSTRLPBF Infineon Technologies irfz24nspbf.pdf?fileId=5546d462533600a40153563affb821f9 Description: MOSFET N-CH 55V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
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IRLML5203TRPBF IRLML5203TRPBF Infineon Technologies infineon-irlml5203-datasheet-en.pdf Description: MOSFET P-CH 30V 3A MICRO3/SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
на замовлення 96800 шт:
термін постачання 21-31 дні (днів)
6000+6.71 грн
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
IRF3707ZCSTRLP IRF3707ZCSTRLP Infineon Technologies IRF3707ZC(S,L)PbF.pdf Description: MOSFET N-CH 30V 59A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3707ZSTRLP IRF3707ZSTRLP Infineon Technologies irf3707zpbf.pdf?fileId=5546d462533600a4015355df74821938 Description: MOSFET N-CH 30V 59A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRFZ48VSTRLPBF IRFZ48VSTRLPBF Infineon Technologies irfz48vspbf.pdf?fileId=5546d462533600a40153563ed0e42237 Description: MOSFET N-CH 60V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRLZ34NSTRLPBF IRLZ34NSTRLPBF Infineon Technologies irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722 Description: MOSFET N-CH 55V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
на замовлення 23200 шт:
термін постачання 21-31 дні (днів)
800+45.32 грн
1600+40.18 грн
2400+38.42 грн
4000+34.20 грн
5600+33.10 грн
8000+32.03 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFZ34NSTRLPBF IRFZ34NSTRLPBF Infineon Technologies irfz34nspbf.pdf?fileId=5546d462533600a40153563b1a522202 Description: MOSFET N-CH 55V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+47.79 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3711ZSTRLPBF IRF3711ZSTRLPBF Infineon Technologies IRF3711ZP,ZS,ZL,PbF.pdf Description: MOSFET N-CH 20V 92A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
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IRF3711ZCSTRLP IRF3711ZCSTRLP Infineon Technologies irf3711zcspbf.pdf Description: MOSFET N-CH 20V 92A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IRL3102STRLPBF IRL3102STRLPBF Infineon Technologies IRL3102SPbF.pdf Description: MOSFET N-CH 20V 61A D2PAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
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IRF3708STRLPBF IRF3708STRLPBF Infineon Technologies irf3708pbf.pdf?fileId=5546d462533600a4015355df7cf5193c Description: MOSFET N-CH 30V 62A D2PAK
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
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IRL3402STRLPBF IRL3402STRLPBF Infineon Technologies IRL3402S.pdf Description: MOSFET N-CH 20V 85A D2PAK
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IRL8113STRLPBF IRL8113STRLPBF Infineon Technologies IRL8113(S,L)PbF.pdf Description: MOSFET N-CH 30V 105A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
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IRGIB15B60KD1P irgib15b60kd1p.pdf?fileId=5546d462533600a40153565250c42432
IRGIB15B60KD1P
Виробник: Infineon Technologies
Description: IGBT 600V 19A 52W TO220FP
Power - Max: 52 W
Current - Collector Pulsed (Icm): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Gate Charge: 56 nC
Test Condition: 400V, 15A, 22Ohm, 15V
Switching Energy: 127µJ (on), 334µJ (off)
Td (on/off) @ 25°C: 30ns/173ns
IGBT Type: NPT
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Reverse Recovery Time (trr): 67 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IRFB4229PBF irfb4229pbf.pdf?fileId=5546d462533600a401535615fb561e23
IRFB4229PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 46A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
на замовлення 935 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+228.60 грн
50+110.74 грн
100+100.10 грн
500+76.46 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRS26302DJPBF description irs26302dpbf.pdf?fileId=5546d462533600a40153567b681d2845
IRS26302DJPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 125ns, 50ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Tube
DigiKey Programmable: Not Verified
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IRS2530DSPBF description irs2530d.pdf?fileId=5546d462533600a40153567af4f52821
IRS2530DSPBF
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 115KHZ 8SOIC
Current - Supply: 5 mA
Dimming: Yes
Supplier Device Package: 8-SOIC
Voltage - Supply: 11.5V ~ 16.6V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 34.2kHz ~ 115kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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AUXAKF1405ZS-7P irf1405zs-7ppbf.pdf?fileId=5546d462533600a4015355db205718c5
AUXAKF1405ZS-7P
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5360 pF @ 25 V
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IR2235SPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2235SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 90ns, 40ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 1200 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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PVA3324NPBF IRSDS10619-1.pdf?t.download=true&u=5oefqw
PVA3324NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 150MA 0-300V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 24 Ohms
Voltage - Load: 0 V ~ 300 V
Part Status: Active
Supplier Device Package: 8-DIP Modified
Load Current: 150 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
на замовлення 878 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+547.86 грн
10+469.51 грн
25+448.38 грн
50+406.38 грн
100+392.43 грн
250+374.72 грн
500+355.91 грн
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PVT412APBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
PVT412APBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 240MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 240 mA
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 6 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 2526 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+423.10 грн
10+362.88 грн
25+346.48 грн
50+314.04 грн
100+303.26 грн
250+289.58 грн
500+275.05 грн
1000+265.59 грн
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PVA3055NSPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
PVA3055NSPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 50MA 0-300V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 160 Ohms
Voltage - Load: 0 V ~ 300 V
Supplier Device Package: 8-SMD
Load Current: 50 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
на замовлення 132 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+771.81 грн
10+661.66 грн
25+631.83 грн
50+572.60 грн
100+552.95 грн
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IRFI4020H-117P irfi4020h-117p.pdf?fileId=5546d462533600a401535623e7271f73
IRFI4020H-117P
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 200V 9.1A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 21W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9.1A
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IRFSL38N20DPBF irfs38n20dpbf.pdf?fileId=5546d462533600a401535636ba7e2181
IRFSL38N20DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 43A TO262
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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IRS21271SPBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS21271SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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IRS2552DSPBF irs2552dpbf.pdf?fileId=5546d462533600a40153567b212d2832
IRS2552DSPBF
Виробник: Infineon Technologies
Description: IC CCFL/EEFL CNTRL 69KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 39kHz ~ 69kHz
Type: CCFL/EEFL Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Supplier Device Package: 16-SOIC
Dimming: Yes
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
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IRGB4061DPBF description IRGB4061DPBF.pdf
IRGB4061DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 36A 206W TO220AB
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Reverse Recovery Time (trr): 100 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 206 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 36 A
Part Status: Obsolete
Gate Charge: 35 nC
Test Condition: 400V, 18A, 22Ohm, 15V
Switching Energy: 95µJ (on), 350µJ (off)
Td (on/off) @ 25°C: 40ns/105ns
IGBT Type: Trench
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IRL3715ZSTRLPBF IRL3715Z(S,L)PbF.pdf
IRL3715ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 50A D2PAK
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IRFP4227PBF description irfp4227pbf.pdf?fileId=5546d462533600a40153562927642004
IRFP4227PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 65A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 46A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
Мінімальне замовлення: 400 шт
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IRFR3806PBF description irfr3806pbf.pdf?fileId=5546d462533600a401535631e18720d9
IRFR3806PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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IRFSL4310PBF irfs4310pbf.pdf?fileId=5546d462533600a40153563a0e2e21a7
IRFSL4310PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 130A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 50 V
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PVI5080NPBF Infineon-PVI5080N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff8185cd0
PVI5080NPBF
Виробник: Infineon Technologies
Description: OPTOISO 4KV PHVOLT 8DIP MODIFIED
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 8µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-DIP Modified
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Part Status: Active
Number of Channels: 1
на замовлення 1299 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+433.95 грн
50+268.66 грн
100+253.73 грн
500+213.26 грн
1000+205.19 грн
В кошику  од. на суму  грн.
IRS21853SPBF fundamentals-of-power-semiconductors
IRS21853SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 16SOIC
DigiKey Programmable: Not Verified
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Independent
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: 16-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Gate Type: IGBT, N-Channel MOSFET
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IRGB4056DPBF description irgb4056dpbf.pdf?fileId=5546d462533600a401535651ec3f2417
IRGB4056DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 24A TO-220AB
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
Reverse Recovery Time (trr): 68 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 140 W
Current - Collector Pulsed (Icm): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 24 A
Part Status: Obsolete
Gate Charge: 25 nC
Test Condition: 400V, 12A, 22Ohm, 15V
Switching Energy: 75µJ (on), 225µJ (off)
Td (on/off) @ 25°C: 31ns/83ns
IGBT Type: Trench
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PVI5080NSPBF Infineon-PVI5080N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff8185cd0
PVI5080NSPBF
Виробник: Infineon Technologies
Description: OPTOISOLTR 4KV 1CH PHVOLT 8-SMD
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Voltage - Output (Max): 5V
Supplier Device Package: 8-SMD
Voltage - Isolation: 4000Vrms
Current - Output / Channel: 8µA
Input Type: DC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 8-SMD, Gull Wing, 4 Leads
Packaging: Tube
на замовлення 3008 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+439.37 грн
50+272.47 грн
100+257.37 грн
500+216.40 грн
1000+208.24 грн
2000+201.34 грн
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IRF2907ZLPBF irf2907zpbf.pdf?fileId=5546d462533600a4015355ded98f1902
IRF2907ZLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 160A TO262
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 3200 шт
В кошику  од. на суму  грн.
IRFS4229PBF irfs4229pbf.pdf?fileId=5546d462533600a401535639fdc421a1
IRFS4229PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IRGB4062DPBF description IRG%28B%2CP%294062DPbF%28-EPbF%29.pdf
IRGB4062DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-220AB
Power - Max: 250 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Part Status: Obsolete
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
IGBT Type: Trench
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IRFS3607PBF irfs3607pbf.pdf?fileId=5546d462533600a401535636a42b2176
IRFS3607PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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IRS21953SPBF fundamentals-of-power-semiconductors
IRS21953SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF BRD/LOW 16SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 500mA, 500mA
Logic Voltage - VIL, VIH: 0.6V, 3.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 3
Driven Configuration: Half-Bridge, Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 25ns
Supplier Device Package: 16-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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PVDZ172NPBF description pvdz172.pdf?fileId=5546d462533600a401535683ba592934
PVDZ172NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1.5 A
Supplier Device Package: 8-DIP Modified
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 1919 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+513.76 грн
10+441.01 грн
25+421.22 грн
50+381.73 грн
100+368.64 грн
250+351.99 грн
500+334.33 грн
1000+322.83 грн
В кошику  од. на суму  грн.
IRL3715ZCSTRLP irl3715zcspbf.pdf
IRL3715ZCSTRLP
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 50A D2PAK
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IRL2703STRLPBF Part_Number_Guide_Web.pdf
IRL2703STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 24A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3805L-7PPBF IRSDS18836-1.pdf?t.download=true&u=5oefqw
IRF3805L-7PPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 160A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику  од. на суму  грн.
PVG612PBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
PVG612PBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 6-DIP
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 3340 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+549.41 грн
10+471.60 грн
25+450.29 грн
50+408.11 грн
100+394.11 грн
250+376.32 грн
500+357.43 грн
1000+345.14 грн
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IRL3714STRLPBF IRL3714(S,L)PbF.pdf
IRL3714STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
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IR2125PBF infineon-ir2125-ds-en.pdf
IR2125PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 0V ~ 18V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 43ns, 26ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1.6A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1462 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+331.66 грн
10+242.00 грн
50+210.86 грн
100+188.83 грн
250+179.26 грн
500+173.50 грн
1000+165.99 грн
В кошику  од. на суму  грн.
PVR2300NPBF PVR33N%20(PbF).pdf
PVR2300NPBF
Виробник: Infineon Technologies
Description: SSR RELAY DPST-NO 165MA 0-200V
Voltage - Load: 0 V ~ 200 V
Part Status: Obsolete
Supplier Device Package: 16-DIP
Load Current: 165 mA
Termination Style: PC Pin
Circuit: DPST-NO (2 Form A) x 2
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Packaging: Tube
On-State Resistance (Max): 24 Ohms
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IPS7071GPBF IPS7071GPbF_6-24-07.pdf
IPS7071GPBF
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Rds On (Typ): 80mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Auto Restart
Packaging: Tube
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V ~ 35V
Input Type: Non-Inverting
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IRFI4229PBF irfi4229pbf.pdf?fileId=5546d462533600a40153562416651f80
IRFI4229PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 19A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 436 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+259.59 грн
50+198.37 грн
100+170.05 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PVA1352NSPBF pva13n.pdf?fileId=5546d462533600a401535683928a291e
PVA1352NSPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 375MA 0-100V
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Part Status: Active
Supplier Device Package: 8-SMD
Load Current: 375 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
на замовлення 1468 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+654.02 грн
10+561.07 грн
25+535.78 грн
50+485.58 грн
100+468.91 грн
250+447.74 грн
500+425.26 грн
1000+410.63 грн
В кошику  од. на суму  грн.
IRS2092SPBF description IRS2092.pdf
IRS2092SPBF
Виробник: Infineon Technologies
Description: IC AUDIO AMP D 16-SOIC
Packaging: Tube
Features: Depop, Short-Circuit Protection
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Supplier Device Package: 16-SOIC
Part Status: Discontinued at Digi-Key
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IRL3714ZSTRLPBF IRL3714Z(S,L)PbF.pdf
IRL3714ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
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PVI5033RSPBF IRSDS10627-1.pdf?t.download=true&u=5oefqw
PVI5033RSPBF
Виробник: Infineon Technologies
Description: OPTOISO 3.75KV 2CH PHVOLT 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 10V
Turn On / Turn Off Time (Typ): 2.5ms, 500µs (Max)
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 40 mA
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+819.08 грн
50+533.36 грн
100+507.97 грн
500+434.54 грн
В кошику  од. на суму  грн.
IRL3715STRLPBF IRL3715%28S%2CL%29PbF.pdf
IRL3715STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 54A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3704ZSTRLPBF irf3704zpbf.pdf?fileId=5546d462533600a4015355df54f71929
IRF3704ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRL3302STRLPBF IRL3302SPbF.pdf
IRL3302STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 39A D2PAK
товару немає в наявності
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IRF520NSTRLPBF irf520nspbf.pdf
IRF520NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRF3704ZCSTRLP irf3704zcspbf.pdf
IRF3704ZCSTRLP
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 67A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PVAZ172NPBF pvaz172.pdf?fileId=5546d462533600a4015364c42ea329e4
PVAZ172NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 mOhms
Voltage - Load: 0 V ~ 60 V
Supplier Device Package: 8-DIP Modified
Load Current: 1 A
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1053.87 грн
10+904.03 грн
25+863.24 грн
50+782.32 грн
В кошику  од. на суму  грн.
IRFZ24NSTRLPBF irfz24nspbf.pdf?fileId=5546d462533600a40153563affb821f9
IRFZ24NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
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IRLML5203TRPBF infineon-irlml5203-datasheet-en.pdf
IRLML5203TRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 3A MICRO3/SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
на замовлення 96800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6000+6.71 грн
Мінімальне замовлення: 6000 шт
В кошику  од. на суму  грн.
IRF3707ZCSTRLP IRF3707ZC(S,L)PbF.pdf
IRF3707ZCSTRLP
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3707ZSTRLP irf3707zpbf.pdf?fileId=5546d462533600a4015355df74821938
IRF3707ZSTRLP
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 59A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRFZ48VSTRLPBF irfz48vspbf.pdf?fileId=5546d462533600a40153563ed0e42237
IRFZ48VSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRLZ34NSTRLPBF irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722
IRLZ34NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
на замовлення 23200 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+45.32 грн
1600+40.18 грн
2400+38.42 грн
4000+34.20 грн
5600+33.10 грн
8000+32.03 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRFZ34NSTRLPBF irfz34nspbf.pdf?fileId=5546d462533600a40153563b1a522202
IRFZ34NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 29A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
800+47.79 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IRF3711ZSTRLPBF IRF3711ZP,ZS,ZL,PbF.pdf
IRF3711ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 92A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF3711ZCSTRLP irf3711zcspbf.pdf
IRF3711ZCSTRLP
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 92A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IRL3102STRLPBF IRL3102SPbF.pdf
IRL3102STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 61A D2PAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
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IRF3708STRLPBF irf3708pbf.pdf?fileId=5546d462533600a4015355df7cf5193c
IRF3708STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 62A D2PAK
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2417 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
товару немає в наявності
В кошику  од. на суму  грн.
IRL3402STRLPBF IRL3402S.pdf
IRL3402STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 85A D2PAK
товару немає в наявності
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IRL8113STRLPBF IRL8113(S,L)PbF.pdf
IRL8113STRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 105A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
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