Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117869) > Сторінка 152 з 1965

Обрати Сторінку:   [  << Попередня Сторінка ]  1 147 148 149 150 151 152 153 154 155 156 157 196 392 588 784 980 1176 1372 1568 1764 1960 1965  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
CY7C1370D-167AXCB CY7C1370D-167AXCB Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1354SV25-166BZC CY7C1354SV25-166BZC Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1325S-100AXC CY7C1325S-100AXC Infineon Technologies Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1352S-133AXC CY7C1352S-133AXC Infineon Technologies Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5004TRPBF IRFH5004TRPBF Infineon Technologies irfh5004pbf.pdf?fileId=5546d462533600a40153561a9d131e94 Description: MOSFET N-CH 40V 28A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5015TRPBF IRFH5015TRPBF Infineon Technologies irfh5015pbf.pdf?fileId=5546d462533600a40153561abe001e9c Description: MOSFET N-CH 150V 10A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5020TRPBF IRFH5020TRPBF Infineon Technologies irfh5020pbf.pdf?fileId=5546d462533600a40153561ac6fe1e9e Description: MOSFET N-CH 200V 5.1A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5302DTRPBF Infineon Technologies irfh5302dpbf.pdf?fileId=5546d462533600a40153561b4f5e1ec0 Description: MOSFET N-CH 30V 29A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5304TRPBF IRFH5304TRPBF Infineon Technologies irfh5304pbf.pdf?fileId=5546d462533600a40153561b6a2a1ec7 Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLH5030TRPBF IRLH5030TRPBF Infineon Technologies irlh5030pbf.pdf?fileId=5546d462533600a4015356635f1a2599 Description: MOSFET N-CH 100V 13A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+62.57 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRLR8259PBF IRLR8259PBF Infineon Technologies irlr8259pbf.pdf?fileId=5546d462533600a40153566e1ebe26e9 Description: MOSFET N-CH 25V 57A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2060TRPBF IRLML2060TRPBF Infineon Technologies irlml2060pbf.pdf?fileId=5546d462533600a401535664b7fb25ee Description: MOSFET N-CH 60V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.67 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLR8256TRPBF IRLR8256TRPBF Infineon Technologies irlr8256pbf.pdf?fileId=5546d462533600a40153566e157326e6 Description: MOSFET N-CH 25V 81A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5004TR2PBF IRFH5004TR2PBF Infineon Technologies irfh5004pbf.pdf?fileId=5546d462533600a40153561a9d131e94 Description: MOSFET N-CH 40V 28A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5015TR2PBF IRFH5015TR2PBF Infineon Technologies irfh5015pbf.pdf?fileId=5546d462533600a40153561abe001e9c Description: MOSFET N-CH 150V 10A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5020TR2PBF IRFH5020TR2PBF Infineon Technologies irfh5020pbf.pdf?fileId=5546d462533600a40153561ac6fe1e9e Description: MOSFET N-CH 200V 5.1A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5250DTR2PBF IRFH5250DTR2PBF Infineon Technologies irfh5250dpbf.pdf?fileId=5546d462533600a40153561b25601eb6 Description: MOSFET N-CH 25V 40A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5255TR2PBF IRFH5255TR2PBF Infineon Technologies irfh5255pbf.pdf?fileId=5546d462533600a40153561b36821eba Description: MOSFET N-CH 25V 15A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5302DTR2PBF IRFH5302DTR2PBF Infineon Technologies irfh5302dpbf.pdf?fileId=5546d462533600a40153561b4f5e1ec0 Description: MOSFET N-CH 30V 29A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5304TR2PBF IRFH5304TR2PBF Infineon Technologies irfh5304pbf.pdf?fileId=5546d462533600a40153561b6a2a1ec7 Description: MOSFET N-CH 30V 22A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLH5030TR2PBF IRLH5030TR2PBF Infineon Technologies irlh5030pbf.pdf?fileId=5546d462533600a4015356635f1a2599 Description: MOSFET N-CH 100V 13A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2060TRPBF IRLML2060TRPBF Infineon Technologies irlml2060pbf.pdf?fileId=5546d462533600a401535664b7fb25ee Description: MOSFET N-CH 60V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.67 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLR8259TRPBF IRLR8259TRPBF Infineon Technologies irlr8259pbf.pdf?fileId=5546d462533600a40153566e1ebe26e9 Description: MOSFET N-CH 25V 57A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLR8259TRPBF IRLR8259TRPBF Infineon Technologies irlr8259pbf.pdf?fileId=5546d462533600a40153566e1ebe26e9 Description: MOSFET N-CH 25V 57A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IR3871MTRPBF IR3871MTRPBF Infineon Technologies ir3871m.pdf?fileId=5546d462533600a4015355d5b3641806 Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1MHz
Voltage - Input (Max): 26V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
товару немає в наявності
В кошику  од. на суму  грн.
CY14B104M-ZSP45XI CY14B104M-ZSP45XI Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
1+1738.99 грн
10+1635.53 грн
В кошику  од. на суму  грн.
CY14B104NA-ZSP25XI CY14B104NA-ZSP25XI Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 178 шт:
термін постачання 21-31 дні (днів)
1+2398.66 грн
10+2049.69 грн
25+1954.36 грн
40+1789.77 грн
108+1699.51 грн
В кошику  од. на суму  грн.
CY14B104NA-ZSP45XI CY14B104NA-ZSP45XI Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 127 шт:
термін постачання 21-31 дні (днів)
1+2396.31 грн
10+2048.18 грн
25+1952.88 грн
40+1788.43 грн
108+1698.25 грн
В кошику  од. на суму  грн.
CY14B108K-ZS25XI CY14B108K-ZS25XI Infineon Technologies Infineon-CY14B108K_CY14B108M_8-Mbit_(1024_K_8_512_K_16)_nvSRAM_with_Real_Time_Clock-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf7de133d4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
1+3397.19 грн
В кошику  од. на суму  грн.
CY14B108L-ZS45XI CY14B108L-ZS45XI Infineon Technologies ?docID=50893 Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
1+5449.94 грн
10+4843.30 грн
25+4685.12 грн
50+4286.20 грн
135+4131.08 грн
В кошику  од. на суму  грн.
CY14B108N-BA45XI CY14B108N-BA45XI Infineon Technologies ?docID=50893 Description: IC NVSRAM 8MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
1+2917.15 грн
10+2594.44 грн
25+2510.20 грн
50+2296.74 грн
100+2240.80 грн
В кошику  од. на суму  грн.
CY8CPLC20-48LTXI CY8CPLC20-48LTXI Infineon Technologies Infineon-CY8CPLC20_Powerline_Communication_Solution-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca54574303&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC PLC PSOC CMOS 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 48-QFN (7x7)
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)
1+1696.63 грн
10+1310.29 грн
25+1229.51 грн
100+1070.59 грн
260+1029.40 грн
520+1005.75 грн
В кошику  од. на суму  грн.
CY14B101KA-SP25XI CY14B101KA-SP25XI Infineon Technologies download Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
1+2171.98 грн
10+1966.60 грн
30+1898.37 грн
60+1725.20 грн
120+1518.66 грн
В кошику  од. на суму  грн.
CY8C20111-SX1IT CY8C20111-SX1IT Infineon Technologies Description: IC CAPSENSE EXP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 1
Supplier Device Package: 8-SOIC
Proximity Detection: No
LED Driver Channels: Up to 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C20396A-24LQXIT CY8C20396A-24LQXIT Infineon Technologies Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU PSOC 16K FLASH 2K 24QFN
товару немає в наявності
В кошику  од. на суму  грн.
CY8C28243-24PVXIT CY8C28243-24PVXIT Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C28452-24PVXIT CY8C28452-24PVXIT Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C28623-24LTXIT CY8C28623-24LTXIT Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8CPLC20-28PVXIT CY8CPLC20-28PVXIT Infineon Technologies Infineon-CY8CPLC20_Powerline_Communication_Solution-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca54574303&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC PLC PSOC CMOS 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 28-SSOP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
CYWB0226ABM-BVXIT CYWB0226ABM-BVXIT Infineon Technologies CYWB0224%2C26ABS%2CABM.pdf Description: IC WEST BRIDGE ASTORIA 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
BA892H6127XTSA1 BA892H6127XTSA1 Infineon Technologies ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA892H6327XTSA1 BA892H6327XTSA1 Infineon Technologies ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA892H6433XTMA1 BA892H6433XTMA1 Infineon Technologies ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA892H6770XTSA1 BA892H6770XTSA1 Infineon Technologies ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA89202VH6127XTSA1 BA89202VH6127XTSA1 Infineon Technologies ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Not For New Designs
Current - Max: 100 mA
на замовлення 64000 шт:
термін постачання 21-31 дні (днів)
8000+4.02 грн
16000+3.76 грн
24000+3.71 грн
40000+3.43 грн
56000+3.40 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
BA89202VH6327XTSA1 BA89202VH6327XTSA1 Infineon Technologies ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA89202VH6433XTMA1 BA89202VH6433XTMA1 Infineon Technologies ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA895H6327XTSA1 BA895H6327XTSA1 Infineon Technologies BA595_885_895_Series.pdf Description: RF DIODE PIN 50V SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 50 mA
товару немає в наявності
В кошику  од. на суму  грн.
BAR5002VH6327XTSA1 BAR5002VH6327XTSA1 Infineon Technologies bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92 Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+3.59 грн
6000+3.34 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAR5003WE6327HTSA1 BAR5003WE6327HTSA1 Infineon Technologies bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92 Description: RF DIODE PIN 50V 250MW SOD323-2
товару немає в наявності
В кошику  од. на суму  грн.
BAR6302VH6327XTSA1 BAR6302VH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+3.12 грн
6000+2.90 грн
9000+2.84 грн
15000+2.61 грн
21000+2.58 грн
30000+2.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAR6302WH6327XTSA1 BAR6302WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR 63-02W H6433 BAR 63-02W H6433 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6306WH6327XTSA1 BAR6306WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6402VH6327XTSA1 BAR6402VH6327XTSA1 Infineon Technologies Infineon-BAR64-02V-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0247ae38fc Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6404WH6327XTSA1 BAR6404WH6327XTSA1 Infineon Technologies Infineon-BAR64-04W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0263783902 Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6405WH6327XTSA1 BAR6405WH6327XTSA1 Infineon Technologies Infineon-BAR64-05W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f02762a3906 Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
3000+6.55 грн
6000+6.11 грн
9000+6.01 грн
15000+5.54 грн
21000+5.48 грн
30000+5.42 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAR 64-05W H6433 BAR 64-05W H6433 Infineon Technologies BAR64.pdf Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6406WH6327XTSA1 BAR6406WH6327XTSA1 Infineon Technologies Infineon-BAR64-06W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f030b2c390a Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+6.33 грн
6000+5.90 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAR6502VH6327XTSA1 BAR6502VH6327XTSA1 Infineon Technologies bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0 Description: RF DIODE PIN 30V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+3.26 грн
6000+3.03 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CY7C1370D-167AXCB download
CY7C1370D-167AXCB
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1354SV25-166BZC
CY7C1354SV25-166BZC
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1325S-100AXC
CY7C1325S-100AXC
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1352S-133AXC
CY7C1352S-133AXC
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5004TRPBF irfh5004pbf.pdf?fileId=5546d462533600a40153561a9d131e94
IRFH5004TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 28A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5015TRPBF irfh5015pbf.pdf?fileId=5546d462533600a40153561abe001e9c
IRFH5015TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 10A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5020TRPBF irfh5020pbf.pdf?fileId=5546d462533600a40153561ac6fe1e9e
IRFH5020TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.1A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5302DTRPBF irfh5302dpbf.pdf?fileId=5546d462533600a40153561b4f5e1ec0
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 29A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5304TRPBF irfh5304pbf.pdf?fileId=5546d462533600a40153561b6a2a1ec7
IRFH5304TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLH5030TRPBF irlh5030pbf.pdf?fileId=5546d462533600a4015356635f1a2599
IRLH5030TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+62.57 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRLR8259PBF irlr8259pbf.pdf?fileId=5546d462533600a40153566e1ebe26e9
IRLR8259PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 57A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2060TRPBF irlml2060pbf.pdf?fileId=5546d462533600a401535664b7fb25ee
IRLML2060TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.67 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLR8256TRPBF irlr8256pbf.pdf?fileId=5546d462533600a40153566e157326e6
IRLR8256TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 81A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5004TR2PBF irfh5004pbf.pdf?fileId=5546d462533600a40153561a9d131e94
IRFH5004TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 28A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5015TR2PBF irfh5015pbf.pdf?fileId=5546d462533600a40153561abe001e9c
IRFH5015TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 10A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5020TR2PBF irfh5020pbf.pdf?fileId=5546d462533600a40153561ac6fe1e9e
IRFH5020TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.1A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5250DTR2PBF irfh5250dpbf.pdf?fileId=5546d462533600a40153561b25601eb6
IRFH5250DTR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 40A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5255TR2PBF irfh5255pbf.pdf?fileId=5546d462533600a40153561b36821eba
IRFH5255TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 15A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5302DTR2PBF irfh5302dpbf.pdf?fileId=5546d462533600a40153561b4f5e1ec0
IRFH5302DTR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 29A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRFH5304TR2PBF irfh5304pbf.pdf?fileId=5546d462533600a40153561b6a2a1ec7
IRFH5304TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLH5030TR2PBF irlh5030pbf.pdf?fileId=5546d462533600a4015356635f1a2599
IRLH5030TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLML2060TRPBF irlml2060pbf.pdf?fileId=5546d462533600a401535664b7fb25ee
IRLML2060TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.2A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.67 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLR8259TRPBF irlr8259pbf.pdf?fileId=5546d462533600a40153566e1ebe26e9
IRLR8259TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 57A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IRLR8259TRPBF irlr8259pbf.pdf?fileId=5546d462533600a40153566e1ebe26e9
IRLR8259TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 57A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
товару немає в наявності
В кошику  од. на суму  грн.
IR3871MTRPBF ir3871m.pdf?fileId=5546d462533600a4015355d5b3641806
IR3871MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 8A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1MHz
Voltage - Input (Max): 26V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
товару немає в наявності
В кошику  од. на суму  грн.
CY14B104M-ZSP45XI download
CY14B104M-ZSP45XI
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1738.99 грн
10+1635.53 грн
В кошику  од. на суму  грн.
CY14B104NA-ZSP25XI download
CY14B104NA-ZSP25XI
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 178 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2398.66 грн
10+2049.69 грн
25+1954.36 грн
40+1789.77 грн
108+1699.51 грн
В кошику  од. на суму  грн.
CY14B104NA-ZSP45XI download
CY14B104NA-ZSP45XI
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 127 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2396.31 грн
10+2048.18 грн
25+1952.88 грн
40+1788.43 грн
108+1698.25 грн
В кошику  од. на суму  грн.
CY14B108K-ZS25XI Infineon-CY14B108K_CY14B108M_8-Mbit_(1024_K_8_512_K_16)_nvSRAM_with_Real_Time_Clock-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf7de133d4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY14B108K-ZS25XI
Виробник: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3397.19 грн
В кошику  од. на суму  грн.
CY14B108L-ZS45XI ?docID=50893
CY14B108L-ZS45XI
Виробник: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
на замовлення 260 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5449.94 грн
10+4843.30 грн
25+4685.12 грн
50+4286.20 грн
135+4131.08 грн
В кошику  од. на суму  грн.
CY14B108N-BA45XI ?docID=50893
CY14B108N-BA45XI
Виробник: Infineon Technologies
Description: IC NVSRAM 8MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2917.15 грн
10+2594.44 грн
25+2510.20 грн
50+2296.74 грн
100+2240.80 грн
В кошику  од. на суму  грн.
CY8CPLC20-48LTXI Infineon-CY8CPLC20_Powerline_Communication_Solution-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca54574303&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CPLC20-48LTXI
Виробник: Infineon Technologies
Description: IC PLC PSOC CMOS 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 48-QFN (7x7)
на замовлення 1140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1696.63 грн
10+1310.29 грн
25+1229.51 грн
100+1070.59 грн
260+1029.40 грн
520+1005.75 грн
В кошику  од. на суму  грн.
CY14B101KA-SP25XI download
CY14B101KA-SP25XI
Виробник: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 247 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2171.98 грн
10+1966.60 грн
30+1898.37 грн
60+1725.20 грн
120+1518.66 грн
В кошику  од. на суму  грн.
CY8C20111-SX1IT
CY8C20111-SX1IT
Виробник: Infineon Technologies
Description: IC CAPSENSE EXP 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 1
Supplier Device Package: 8-SOIC
Proximity Detection: No
LED Driver Channels: Up to 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C20396A-24LQXIT Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C20396A-24LQXIT
Виробник: Infineon Technologies
Description: IC MCU PSOC 16K FLASH 2K 24QFN
товару немає в наявності
В кошику  од. на суму  грн.
CY8C28243-24PVXIT download
CY8C28243-24PVXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C28452-24PVXIT download
CY8C28452-24PVXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C28623-24LTXIT download
CY8C28623-24LTXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Part Status: Obsolete
Number of I/O: 44
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8CPLC20-28PVXIT Infineon-CY8CPLC20_Powerline_Communication_Solution-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca54574303&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CPLC20-28PVXIT
Виробник: Infineon Technologies
Description: IC PLC PSOC CMOS 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 28-SSOP
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
CYWB0226ABM-BVXIT CYWB0224%2C26ABS%2CABM.pdf
CYWB0226ABM-BVXIT
Виробник: Infineon Technologies
Description: IC WEST BRIDGE ASTORIA 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
BA892H6127XTSA1 ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed
BA892H6127XTSA1
Виробник: Infineon Technologies
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA892H6327XTSA1 ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed
BA892H6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA892H6433XTMA1 ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed
BA892H6433XTMA1
Виробник: Infineon Technologies
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA892H6770XTSA1 ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed
BA892H6770XTSA1
Виробник: Infineon Technologies
Description: RF DIODE STANDARD 35V SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA89202VH6127XTSA1 ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed
BA89202VH6127XTSA1
Виробник: Infineon Technologies
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Not For New Designs
Current - Max: 100 mA
на замовлення 64000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+4.02 грн
16000+3.76 грн
24000+3.71 грн
40000+3.43 грн
56000+3.40 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
BA89202VH6327XTSA1 ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed
BA89202VH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA89202VH6433XTMA1 ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed
BA89202VH6433XTMA1
Виробник: Infineon Technologies
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Part Status: Obsolete
Current - Max: 100 mA
товару немає в наявності
В кошику  од. на суму  грн.
BA895H6327XTSA1 BA595_885_895_Series.pdf
BA895H6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 50 mA
товару немає в наявності
В кошику  од. на суму  грн.
BAR5002VH6327XTSA1 bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92
BAR5002VH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.59 грн
6000+3.34 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAR5003WE6327HTSA1 bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92
BAR5003WE6327HTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW SOD323-2
товару немає в наявності
В кошику  од. на суму  грн.
BAR6302VH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6302VH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.12 грн
6000+2.90 грн
9000+2.84 грн
15000+2.61 грн
21000+2.58 грн
30000+2.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAR6302WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6302WH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR 63-02W H6433 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR 63-02W H6433
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6306WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6306WH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6402VH6327XTSA1 Infineon-BAR64-02V-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0247ae38fc
BAR6402VH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6404WH6327XTSA1 Infineon-BAR64-04W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f0263783902
BAR6404WH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6405WH6327XTSA1 Infineon-BAR64-05W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f02762a3906
BAR6405WH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.55 грн
6000+6.11 грн
9000+6.01 грн
15000+5.54 грн
21000+5.48 грн
30000+5.42 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAR 64-05W H6433 BAR64.pdf
BAR 64-05W H6433
Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику  од. на суму  грн.
BAR6406WH6327XTSA1 Infineon-BAR64-06W-DS-v01_01-EN.pdf?fileId=5546d462689a790c01690f030b2c390a
BAR6406WH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.33 грн
6000+5.90 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAR6502VH6327XTSA1 bar65series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114ff1c81b50af0
BAR6502VH6327XTSA1
Виробник: Infineon Technologies
Description: RF DIODE PIN 30V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.26 грн
6000+3.03 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 147 148 149 150 151 152 153 154 155 156 157 196 392 588 784 980 1176 1372 1568 1764 1960 1965  [ Наступна Сторінка >> ]