Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117872) > Сторінка 157 з 1965

Обрати Сторінку:   [  << Попередня Сторінка ]  1 152 153 154 155 156 157 158 159 160 161 162 196 392 588 784 980 1176 1372 1568 1764 1960 1965  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
BGA614H6327XTSA1 BGA614H6327XTSA1 Infineon Technologies BGA614.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418ffd35163a Description: IC AMP CDMA 0HZ-2.4GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+60.07 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BGA616H6327XTSA1 BGA616H6327XTSA1 Infineon Technologies BGA616_Rev2011.pdf Description: IC AMP CDMA 0HZ-2.7GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+54.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BGA622H6820XTSA1 BGA622H6820XTSA1 Infineon Technologies BGA622.pdf Description: IC AMP DCS 500MHZ-6GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: DCS, GSM, ISM
Voltage - Supply: 3.5V
Gain: 13.6dB
Current - Supply: 10mA
Noise Figure: 1.05dB
P1dB: -13dBm
Test Frequency: 2.14GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+45.91 грн
6000+42.53 грн
9000+41.60 грн
15000+37.98 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BGA628L7E6327XTMA1 BGA628L7E6327XTMA1 Infineon Technologies BGA628L7.pdf Description: IC RF AMP GP 400MHZ-6GHZ TSLP7-8
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.75V
Gain: 21.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: -20.5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSLP-7-8
товару немає в наявності
В кошику  од. на суму  грн.
BGA711L7E6327XTSA1 BGA711L7E6327XTSA1 Infineon Technologies BGA711L7.pdf Description: IC AMP UMTS 1.9GHZ 2.1GHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGA735N16E6327XTSA1 BGA735N16E6327XTSA1 Infineon Technologies bga735n16.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043271faefd0127672c9cd51efe Description: IC AMP UMTS 800MHZ 900MHZ TSNP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSNP-16-1
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BGA748L16E6327XTSA1 BGA748L16E6327XTSA1 Infineon Technologies bga748l16.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd80128b552a914011c Description: IC AMP UMTS 800MHZ 900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -7dBm
Test Frequency: 880MHz
Supplier Device Package: TSLP-16-1
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+73.92 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
BGA751L7E6327XTSA1 BGA751L7E6327XTSA1 Infineon Technologies BGA751L7.pdf Description: IC AMP UMTS 800MHZ 900MHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 15.8dB
Current - Supply: 3.3mA
Noise Figure: 1.05dB
P1dB: -5dBm
Test Frequency: 800MHz
Supplier Device Package: PG-TSLP-7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGA777L7E6327XTSA1 BGA777L7E6327XTSA1 Infineon Technologies BGA777L7.pdf Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16.8dB
Current - Supply: 10mA
Noise Figure: 1.2dB
P1dB: -11dBm
Test Frequency: 2.3GHz
Supplier Device Package: PG-TSLP-7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGB707L7ESDE6327XTSA1 BGB707L7ESDE6327XTSA1 Infineon Technologies Infineon-BGB707L7ESD-DataSheet-v04_01-EN.pdf?fileId=5546d46265f064ff0166389722f14ed4 Description: IC RF AMP 802.11A/B/G/N TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: 802.11a/b/g/n
Voltage - Supply: 1.8V ~ 4V
Gain: 27dB
Current - Supply: 25mA
Noise Figure: 0.7dB
P1dB: 8dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BGB717L7ESDE6327XTSA1 BGB717L7ESDE6327XTSA1 Infineon Technologies BGB717L7ESD.pdf Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BGB717L7ESDE6433XTMA1 BGB717L7ESDE6433XTMA1 Infineon Technologies BGB717L7ESD.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304326dfb1300126f4af874b1831 Description: IC AMP MMIC LN TSLP7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGB741L7ESDE6327XTSA1 BGB741L7ESDE6327XTSA1 Infineon Technologies Infineon-BGB741L7ESD-DS-v03_00-EN.pdf?fileId=5546d46265f064ff016638972c994ed7 Description: IC AMP CELL 50MHZ-3.5GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3.5GHz
RF Type: Cellular, RKE, WiFi
Voltage - Supply: 1.8V ~ 4V
Gain: 19.5dB
Current - Supply: 30mA
Noise Figure: 1dB
P1dB: -6.5dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
7500+39.51 грн
15000+36.63 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
BGF104CE6328XTSA1 BGF104CE6328XTSA1 Infineon Technologies BGF104C.pdf Description: IC HSMMC FILTER/ESD PROT WLP-16
товару немає в наявності
В кошику  од. на суму  грн.
BGF108CE6328XTSA1 BGF108CE6328XTSA1 Infineon Technologies BGF108C.pdf Description: FILTER RC 70 OHMS/17PF ESD SMD
Packaging: Tape & Reel (TR)
Voltage - Rated: 5V
Package / Case: 18-UFBGA, WLCSP
Size / Dimension: 0.079" L x 0.066" W (2.02mm x 1.68mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 17pF
Height: 0.026" (0.65mm)
Attenuation Value: 45dB @ 800MHz ~ 2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 7
товару немає в наявності
В кошику  од. на суму  грн.
BGF112E6328XTSA1 BGF112E6328XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: FILTER RC(PI) 15 OHM/0.005UF SMD
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Size / Dimension: 0.046" L x 0.030" W (1.16mm x 0.76mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 15Ohms, C = 5000pF
Height: 0.026" (0.65mm)
Attenuation Value: 30dB @ 30MHz ~ 1.5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 15
ESD Protection: Yes
Number of Channels: 2
товару немає в наявності
В кошику  од. на суму  грн.
BGF113E6328XTSA1 BGF113E6328XTSA1 Infineon Technologies Description: IC FILTER/ESD PROT WLP-8-6
товару немає в наявності
В кошику  од. на суму  грн.
BGF119E6329XTSA1 BGF119E6329XTSA1 Infineon Technologies BGF119.pdf Description: TVS DIODE 8VWM 13VC S-WLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: WLP-4-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
BGM781N11E6327XUSA1 BGM781N11E6327XUSA1 Infineon Technologies BGM781N11.pdf Description: MODULE GPS FRONT-END TSNP-11-2
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Frequency: 1575.42MHz
RF Type: GPS
Supplier Device Package: PG-TSNP-11
товару немає в наявності
В кошику  од. на суму  грн.
BGR405H6327XTSA1 BGR405H6327XTSA1 Infineon Technologies BGR405.pdf Description: RF TRANS NPN 5V PG-SOT-343 3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 12mA
Voltage - Collector Emitter Breakdown (Max): 5V
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BGR420H6327XTSA1 BGR420H6327XTSA1 Infineon Technologies BGR420.pdf Description: RF TRANS NPN 13V SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 120mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 13V
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
товару немає в наявності
В кошику  од. на суму  грн.
BGS 12AL7-6 E6327 BGS 12AL7-6 E6327 Infineon Technologies BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884 Description: IC SWITCH RF SPDT TSLP7-6
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSB015N04NX3GXUMA1 BSB015N04NX3GXUMA1 Infineon Technologies BSB015N04NX3_G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a03bbfcd7aac Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
BSB017N03LX3 G BSB017N03LX3 G Infineon Technologies BSB017N03LX3_G.pdf Description: MOSFET N-CH 30V 32A/147A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSB024N03LX G BSB024N03LX G Infineon Technologies BSB024N03LX%20G.pdf Description: MOSFET N-CH 30V 27A/145A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 Infineon Technologies BSC042NE7NS3G_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a5f8baf30c25 Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5000+68.44 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC060P03NS3EGATMA1 BSC060P03NS3EGATMA1 Infineon Technologies BSC060P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120adcbe71367cb Description: MOSFET P-CH 30V 17.7/100A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC077N12NS3 G BSC077N12NS3 G Infineon Technologies BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39 Description: MOSFET N-CH 120V 98A 8TDSON
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC084P03NS3GATMA1 BSC084P03NS3GATMA1 Infineon Technologies BSC084P03NS3+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120c83fdcd7326c Description: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
5000+27.79 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC160N10NS3GATMA1 BSC160N10NS3GATMA1 Infineon Technologies BSC160N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd01226040189a7f47 Description: MOSFET N-CH 100V 8.8A/42A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 33A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
5000+29.17 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC190N12NS3GATMA1 BSC190N12NS3GATMA1 Infineon Technologies BSC190N12NS3+Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7bb1e767d49 Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+34.37 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC320N20NS3GATMA1 BSC320N20NS3GATMA1 Infineon Technologies BSC320N20NS3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012495e37b301571 Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+68.02 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC440N10NS3GATMA1 BSC440N10NS3GATMA1 Infineon Technologies BSC440N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122604520d47f56 Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+20.21 грн
10000+18.28 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC520N15NS3GATMA1 BSC520N15NS3GATMA1 Infineon Technologies BSC520N15NS3+Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122eee57d9b21a4 Description: MOSFET N-CH 150V 21A TDSON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
5000+27.64 грн
10000+26.48 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC600N25NS3GATMA1 BSC600N25NS3GATMA1 Infineon Technologies BSC600N25NS3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496ab13871948 Description: MOSFET N-CH 250V 25A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+92.07 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSD816SNL6327HTSA1 BSD816SNL6327HTSA1 Infineon Technologies BSD816SN.pdf Description: MOSFET N-CH 20V 1.4A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
BSD840N L6327 BSD840N L6327 Infineon Technologies BSD840N_Rev2.2.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431b0626df011b12b4486c7c02 Description: MOSFET 2N-CH 20V 0.88A SOT363
товару немає в наявності
В кошику  од. на суму  грн.
BSF024N03LT3GXUMA1 BSF024N03LT3GXUMA1 Infineon Technologies BSF024N03LT3_G.pdf Description: MOSFET N-CH 30V 15A/106A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSF050N03LQ3GXUMA1 BSF050N03LQ3GXUMA1 Infineon Technologies BSF050N03LQ3-G.pdf Description: MOSFET N-CH 30V 15A/60A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSF083N03LQ G BSF083N03LQ G Infineon Technologies BSF083N03LQ_G.pdf Description: MOSFET N-CH 30V 13A/53A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSL308PEL6327HTSA1 BSL308PEL6327HTSA1 Infineon Technologies BSL308PE_Rev2.02.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431d8a6b3c011d8ff3592c03d0 Description: MOSFET 2P-CH 30V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BSL314PEL6327HTSA1 BSL314PEL6327HTSA1 Infineon Technologies BSL314PE_rev2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431ff98815012066194be96c60 Description: MOSFET 2P-CH 30V 1.5A 6TSOP
товару немає в наявності
В кошику  од. на суму  грн.
BSL806NL6327HTSA1 BSL806NL6327HTSA1 Infineon Technologies Infineon-BSL806N-DS-v02_03-en.pdf?fileId=db3a30431b0626df011b128dcbe37bb1 Description: MOSFET 2N-CH 20V 2.3A 6TSOP
товару немає в наявності
В кошику  од. на суму  грн.
BSO080P03NS3GXUMA1 BSO080P03NS3GXUMA1 Infineon Technologies BSO080P03NS3_G_2.2.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043284aacd801286d7aee12296a Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO080P03NS3EGXUMA1 BSO080P03NS3EGXUMA1 Infineon Technologies BSO080P03NS3EG.pdf Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO201SPHXUMA1 BSO201SPHXUMA1 Infineon Technologies BSO201SP_H_1.32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304325afd6e001261dc80c426058 Description: MOSFET P-CH 20V 12A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+42.37 грн
5000+38.64 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BSO207PHXUMA1 BSO207PHXUMA1 Infineon Technologies BSO207PH.pdf Description: MOSFET 2P-CH 20V 5A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 44µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BSO211PHXUMA1 BSO211PHXUMA1 Infineon Technologies BSO211PH.pdf Description: MOSFET 2P-CH 20V 4A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BSO301SPHXUMA1 BSO301SPHXUMA1 Infineon Technologies BSO301SP_Rev1+32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304326c2768b0126d226cd5d68ac Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+51.42 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BSO303PHXUMA1 BSO303PHXUMA1 Infineon Technologies BSO303PH.pdf Description: MOSFET 2P-CH 30V 7A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BSO303SPHXUMA1 BSO303SPHXUMA1 Infineon Technologies BSO303SPH.pdf Description: MOSFET P-CH 30V 7.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSP51H6327XTSA1 BSP51H6327XTSA1 Infineon Technologies BSP50-52.pdf Description: TRANS NPN DARL 60V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
BSP60H6327XTSA1 BSP60H6327XTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
BSP61H6327XTSA1 BSP61H6327XTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 60V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
BSS126H6327XTSA1 BSS126H6327XTSA1 Infineon Technologies BSS126.pdf Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS127H6327XTSA1 BSS127H6327XTSA1 Infineon Technologies BSS127.pdf Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS159NH6327XTSA1 BSS159NH6327XTSA1 Infineon Technologies BSS159N.pdf Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSS159NH6906XTSA1 BSS159NH6906XTSA1 Infineon Technologies Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036 Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+17.53 грн
6000+15.58 грн
9000+14.91 грн
15000+13.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BSS314PEL6327HTSA1 BSS314PEL6327HTSA1 Infineon Technologies BSS314PE.pdf Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS806NL6327HTSA1 BSS806NL6327HTSA1 Infineon Technologies BSS806N.pdf Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BGA614H6327XTSA1 BGA614.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418ffd35163a
BGA614H6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP CDMA 0HZ-2.4GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+60.07 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BGA616H6327XTSA1 BGA616_Rev2011.pdf
BGA616H6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP CDMA 0HZ-2.7GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+54.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BGA622H6820XTSA1 BGA622.pdf
BGA622H6820XTSA1
Виробник: Infineon Technologies
Description: IC AMP DCS 500MHZ-6GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: DCS, GSM, ISM
Voltage - Supply: 3.5V
Gain: 13.6dB
Current - Supply: 10mA
Noise Figure: 1.05dB
P1dB: -13dBm
Test Frequency: 2.14GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+45.91 грн
6000+42.53 грн
9000+41.60 грн
15000+37.98 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BGA628L7E6327XTMA1 BGA628L7.pdf
BGA628L7E6327XTMA1
Виробник: Infineon Technologies
Description: IC RF AMP GP 400MHZ-6GHZ TSLP7-8
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.75V
Gain: 21.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: -20.5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSLP-7-8
товару немає в наявності
В кошику  од. на суму  грн.
BGA711L7E6327XTSA1 BGA711L7.pdf
BGA711L7E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP UMTS 1.9GHZ 2.1GHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGA735N16E6327XTSA1 bga735n16.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043271faefd0127672c9cd51efe
BGA735N16E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSNP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSNP-16-1
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BGA748L16E6327XTSA1 bga748l16.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd80128b552a914011c
BGA748L16E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -7dBm
Test Frequency: 880MHz
Supplier Device Package: TSLP-16-1
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+73.92 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
BGA751L7E6327XTSA1 BGA751L7.pdf
BGA751L7E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 15.8dB
Current - Supply: 3.3mA
Noise Figure: 1.05dB
P1dB: -5dBm
Test Frequency: 800MHz
Supplier Device Package: PG-TSLP-7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGA777L7E6327XTSA1 BGA777L7.pdf
BGA777L7E6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16.8dB
Current - Supply: 10mA
Noise Figure: 1.2dB
P1dB: -11dBm
Test Frequency: 2.3GHz
Supplier Device Package: PG-TSLP-7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGB707L7ESDE6327XTSA1 Infineon-BGB707L7ESD-DataSheet-v04_01-EN.pdf?fileId=5546d46265f064ff0166389722f14ed4
BGB707L7ESDE6327XTSA1
Виробник: Infineon Technologies
Description: IC RF AMP 802.11A/B/G/N TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: 802.11a/b/g/n
Voltage - Supply: 1.8V ~ 4V
Gain: 27dB
Current - Supply: 25mA
Noise Figure: 0.7dB
P1dB: 8dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
BGB717L7ESDE6327XTSA1 BGB717L7ESD.pdf
BGB717L7ESDE6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BGB717L7ESDE6433XTMA1 BGB717L7ESD.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304326dfb1300126f4af874b1831
BGB717L7ESDE6433XTMA1
Виробник: Infineon Technologies
Description: IC AMP MMIC LN TSLP7-1
товару немає в наявності
В кошику  од. на суму  грн.
BGB741L7ESDE6327XTSA1 Infineon-BGB741L7ESD-DS-v03_00-EN.pdf?fileId=5546d46265f064ff016638972c994ed7
BGB741L7ESDE6327XTSA1
Виробник: Infineon Technologies
Description: IC AMP CELL 50MHZ-3.5GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3.5GHz
RF Type: Cellular, RKE, WiFi
Voltage - Supply: 1.8V ~ 4V
Gain: 19.5dB
Current - Supply: 30mA
Noise Figure: 1dB
P1dB: -6.5dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+39.51 грн
15000+36.63 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
BGF104CE6328XTSA1 BGF104C.pdf
BGF104CE6328XTSA1
Виробник: Infineon Technologies
Description: IC HSMMC FILTER/ESD PROT WLP-16
товару немає в наявності
В кошику  од. на суму  грн.
BGF108CE6328XTSA1 BGF108C.pdf
BGF108CE6328XTSA1
Виробник: Infineon Technologies
Description: FILTER RC 70 OHMS/17PF ESD SMD
Packaging: Tape & Reel (TR)
Voltage - Rated: 5V
Package / Case: 18-UFBGA, WLCSP
Size / Dimension: 0.079" L x 0.066" W (2.02mm x 1.68mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 17pF
Height: 0.026" (0.65mm)
Attenuation Value: 45dB @ 800MHz ~ 2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 7
товару немає в наявності
В кошику  од. на суму  грн.
BGF112E6328XTSA1 fundamentals-of-power-semiconductors
BGF112E6328XTSA1
Виробник: Infineon Technologies
Description: FILTER RC(PI) 15 OHM/0.005UF SMD
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Size / Dimension: 0.046" L x 0.030" W (1.16mm x 0.76mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 15Ohms, C = 5000pF
Height: 0.026" (0.65mm)
Attenuation Value: 30dB @ 30MHz ~ 1.5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 15
ESD Protection: Yes
Number of Channels: 2
товару немає в наявності
В кошику  од. на суму  грн.
BGF113E6328XTSA1
BGF113E6328XTSA1
Виробник: Infineon Technologies
Description: IC FILTER/ESD PROT WLP-8-6
товару немає в наявності
В кошику  од. на суму  грн.
BGF119E6329XTSA1 BGF119.pdf
BGF119E6329XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 8VWM 13VC S-WLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: WLP-4-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
BGM781N11E6327XUSA1 BGM781N11.pdf
BGM781N11E6327XUSA1
Виробник: Infineon Technologies
Description: MODULE GPS FRONT-END TSNP-11-2
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Frequency: 1575.42MHz
RF Type: GPS
Supplier Device Package: PG-TSNP-11
товару немає в наявності
В кошику  од. на суму  грн.
BGR405H6327XTSA1 BGR405.pdf
BGR405H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V PG-SOT-343 3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 12mA
Voltage - Collector Emitter Breakdown (Max): 5V
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BGR420H6327XTSA1 BGR420.pdf
BGR420H6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 13V SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 120mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 13V
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
товару немає в наявності
В кошику  од. на суму  грн.
BGS 12AL7-6 E6327 BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884
BGS 12AL7-6 E6327
Виробник: Infineon Technologies
Description: IC SWITCH RF SPDT TSLP7-6
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSB015N04NX3GXUMA1 BSB015N04NX3_G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a03bbfcd7aac
BSB015N04NX3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
BSB017N03LX3 G BSB017N03LX3_G.pdf
BSB017N03LX3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 32A/147A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSB024N03LX G BSB024N03LX%20G.pdf
BSB024N03LX G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 27A/145A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC042NE7NS3GATMA1 BSC042NE7NS3G_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a5f8baf30c25
BSC042NE7NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+68.44 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC060P03NS3EGATMA1 BSC060P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120adcbe71367cb
BSC060P03NS3EGATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 17.7/100A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC077N12NS3 G BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
BSC077N12NS3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 98A 8TDSON
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BSC084P03NS3GATMA1 BSC084P03NS3+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120c83fdcd7326c
BSC084P03NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+27.79 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC160N10NS3GATMA1 BSC160N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd01226040189a7f47
BSC160N10NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.8A/42A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 33A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+29.17 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC190N12NS3GATMA1 BSC190N12NS3+Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7bb1e767d49
BSC190N12NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+34.37 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC320N20NS3GATMA1 BSC320N20NS3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012495e37b301571
BSC320N20NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+68.02 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC440N10NS3GATMA1 BSC440N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122604520d47f56
BSC440N10NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+20.21 грн
10000+18.28 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC520N15NS3GATMA1 BSC520N15NS3+Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122eee57d9b21a4
BSC520N15NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A TDSON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+27.64 грн
10000+26.48 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC600N25NS3GATMA1 BSC600N25NS3+G+Rev2.3.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012496ab13871948
BSC600N25NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 25A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+92.07 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSD816SNL6327HTSA1 BSD816SN.pdf
BSD816SNL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 1.4A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
BSD840N L6327 BSD840N_Rev2.2.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431b0626df011b12b4486c7c02
BSD840N L6327
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.88A SOT363
товару немає в наявності
В кошику  од. на суму  грн.
BSF024N03LT3GXUMA1 BSF024N03LT3_G.pdf
BSF024N03LT3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/106A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSF050N03LQ3GXUMA1 BSF050N03LQ3-G.pdf
BSF050N03LQ3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/60A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSF083N03LQ G BSF083N03LQ_G.pdf
BSF083N03LQ G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/53A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSL308PEL6327HTSA1 BSL308PE_Rev2.02.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431d8a6b3c011d8ff3592c03d0
BSL308PEL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 11µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BSL314PEL6327HTSA1 BSL314PE_rev2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a30431ff98815012066194be96c60
BSL314PEL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 1.5A 6TSOP
товару немає в наявності
В кошику  од. на суму  грн.
BSL806NL6327HTSA1 Infineon-BSL806N-DS-v02_03-en.pdf?fileId=db3a30431b0626df011b128dcbe37bb1
BSL806NL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.3A 6TSOP
товару немає в наявності
В кошику  од. на суму  грн.
BSO080P03NS3GXUMA1 BSO080P03NS3_G_2.2.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043284aacd801286d7aee12296a
BSO080P03NS3GXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO080P03NS3EGXUMA1 BSO080P03NS3EG.pdf
BSO080P03NS3EGXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSO201SPHXUMA1 BSO201SP_H_1.32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304325afd6e001261dc80c426058
BSO201SPHXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 12A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+42.37 грн
5000+38.64 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BSO207PHXUMA1 BSO207PH.pdf
BSO207PHXUMA1
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 5A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 44µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BSO211PHXUMA1 BSO211PH.pdf
BSO211PHXUMA1
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 4A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BSO301SPHXUMA1 BSO301SP_Rev1+32.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304326c2768b0126d226cd5d68ac
BSO301SPHXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+51.42 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BSO303PHXUMA1 BSO303PH.pdf
BSO303PHXUMA1
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 30V 7A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BSO303SPHXUMA1 BSO303SPH.pdf
BSO303SPHXUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 7.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSP51H6327XTSA1 BSP50-52.pdf
BSP51H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS NPN DARL 60V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
BSP60H6327XTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP60H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
BSP61H6327XTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP61H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP DARL 60V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
товару немає в наявності
В кошику  од. на суму  грн.
BSS126H6327XTSA1 BSS126.pdf
BSS126H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS127H6327XTSA1 BSS127.pdf
BSS127H6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS159NH6327XTSA1 BSS159N.pdf
BSS159NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BSS159NH6906XTSA1 Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036
BSS159NH6906XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.53 грн
6000+15.58 грн
9000+14.91 грн
15000+13.56 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BSS314PEL6327HTSA1 BSS314PE.pdf
BSS314PEL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BSS806NL6327HTSA1 BSS806N.pdf
BSS806NL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 11µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 152 153 154 155 156 157 158 159 160 161 162 196 392 588 784 980 1176 1372 1568 1764 1960 1965  [ Наступна Сторінка >> ]