Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149543) > Сторінка 2459 з 2493
Фото | Назва | Виробник | Інформація |
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IRF4104PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Kind of channel: enhancement Gate charge: 68nC Kind of package: tube |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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1ED020I12F2XUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 0...28V; 4.5...5.5V Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
на замовлення 992 шт: термін постачання 21-30 дні (днів) |
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1ED020I12FA2XUMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-20 Output current: -2...2A Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 0...28V; 4.5...5.5V Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
1ED020I12FXUMA2 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 0...28V; 4.5...5.5V Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BFP640H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343 Mounting: SMD Case: SOT343 Kind of package: reel; tape Frequency: 42GHz Kind of transistor: RF Type of transistor: NPN Technology: SiGe:C Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 4.1V Current gain: 110...270 Polarisation: bipolar |
на замовлення 2737 шт: термін постачання 21-30 дні (днів) |
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BFP760H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343 Mounting: SMD Case: SOT343 Kind of package: reel; tape Frequency: 45GHz Kind of transistor: HBT; RF Type of transistor: NPN Technology: SiGe:C Collector current: 70mA Power dissipation: 0.24W Collector-emitter voltage: 13V Current gain: 160...400 Polarisation: bipolar |
на замовлення 2096 шт: термін постачання 21-30 дні (днів) |
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IPP039N04LGXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3 Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Case: PG-TO220-3 Kind of package: tube Polarisation: unipolar On-state resistance: 3.9mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 80A Power dissipation: 94W |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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IRFR8314TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK Mounting: SMD Polarisation: unipolar Case: DPAK Kind of channel: enhancement Technology: HEXFET® Type of transistor: N-MOSFET Kind of package: reel Gate charge: 36nC On-state resistance: 3.1mΩ Power dissipation: 125W Gate-source voltage: ±20V Drain current: 127A Drain-source voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA80R900P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.6A Gate charge: 17nC On-state resistance: 0.75Ω Gate-source voltage: ±20V Power dissipation: 27W Technology: CoolMOS™ P7 |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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BAS3005B02VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A Mounting: SMD Case: SC79 Max. forward impulse current: 5A Load current: 0.5A Semiconductor structure: single diode Max. off-state voltage: 30V Type of diode: Schottky rectifying |
на замовлення 1660 шт: термін постачання 21-30 дні (днів) |
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BTS6133D | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 33A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 On-state resistance: 8mΩ Supply voltage: 5.5...38V DC Technology: High Current PROFET |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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BTS6143D | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 33A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: DPAK5 Supply voltage: 5.5...38V DC Technology: High Current PROFET |
на замовлення 2585 шт: термін постачання 21-30 дні (днів) |
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TT215N22KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 215A Case: BG-PB50-1 Max. forward voltage: 1.8V Max. forward impulse current: 7kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BA89202VH6127XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V Max. off-state voltage: 35V Load current: 0.1A Case: SC79 Kind of package: reel; tape Max. forward voltage: 1V Capacitance: 0.6...1.4pF Leakage current: 20nA Reverse recovery time: 120ns Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Mounting: SMD Type of diode: switching |
на замовлення 2272 шт: термін постачання 21-30 дні (днів) |
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IRFSL4310ZPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 250W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FF200R12KT4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.1kW Topology: IGBT half-bridge |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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FF45MR12W1M1B11BOMA1 | INFINEON TECHNOLOGIES |
![]() Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 25A Case: AG-EASY1BM-2 Electrical mounting: Press-Fit Polarisation: unipolar On-state resistance: 45mΩ Pulsed drain current: 50A Technology: CoolSiC™; SiC Gate-source voltage: -10...20V Mechanical mounting: screw Topology: MOSFET half-bridge; NTC thermistor |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IPAN70R750P7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4A Gate charge: 8.3nC On-state resistance: 0.75Ω Gate-source voltage: ±16V Power dissipation: 20.8W Technology: CoolMOS™ P7 |
на замовлення 203 шт: термін постачання 21-30 дні (днів) |
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BAS7006WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Load current: 70mA Max. forward impulse current: 0.1A Max. off-state voltage: 70V Semiconductor structure: common anode; double Type of diode: Schottky switching |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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1EDN7550BXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™ Kind of package: reel; tape Case: PG-SOT23-6 Type of integrated circuit: driver Technology: EiceDRIVER™ Mounting: SMD Kind of integrated circuit: gate driver; low-side Topology: single transistor Output current: -8...4A Number of channels: 1 Supply voltage: 4.5...20V Voltage class: 80V |
на замовлення 1370 шт: термін постачання 21-30 дні (днів) |
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IRLMS1902TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRLMS1503TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.2A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFSL4010PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 375W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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IRS2104SPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Turn-off time: 185ns |
на замовлення 116 шт: термін постачання 21-30 дні (днів) |
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IRFIZ24NPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 13A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Gate charge: 13.3nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSS84PH6327XTSA2 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.14A Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: SIPMOS™ Gate charge: 0.37nC |
на замовлення 1545 шт: термін постачання 21-30 дні (днів) |
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IPB65R099C6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhancement Technology: CoolMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPI65R099C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhancement Technology: CoolMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPL65R099C7AUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Power dissipation: 128W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhancement Technology: CoolMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPP65R099C6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT6404WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Load current: 0.25A Max. forward impulse current: 0.8A Max. off-state voltage: 40V Semiconductor structure: double series Type of diode: Schottky rectifying |
на замовлення 4145 шт: термін постачання 21-30 дні (днів) |
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BAT6406WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Load current: 0.25A Max. forward impulse current: 0.8A Max. off-state voltage: 40V Semiconductor structure: common anode; double Type of diode: Schottky rectifying |
на замовлення 10236 шт: термін постачання 21-30 дні (днів) |
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IR11672ASTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Type of integrated circuit: driver Kind of integrated circuit: gate driver Supply voltage: 11.4...18V DC Case: SO8 Mounting: SMD Kind of package: reel; tape Application: SMPS Operating temperature: -40...125°C Output current: -7...2A Power: 625mW Voltage class: 200V Topology: flyback; push-pull; resonant LLC |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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BAS7004WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW Power dissipation: 0.25W Case: SOT323 Mounting: SMD Load current: 70mA Max. forward impulse current: 0.1A Max. off-state voltage: 70V Semiconductor structure: double series Type of diode: Schottky switching |
на замовлення 985 шт: термін постачання 21-30 дні (днів) |
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IKW25N120CS7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 150nC Kind of package: tube Turn-on time: 38ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ Turn-off time: 490ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IKW40N120CS7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 179W Case: TO247-3 Mounting: THT Gate charge: 230nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 56A Collector-emitter voltage: 1.2kV Turn-on time: 45ns Turn-off time: 0.5µs Gate-emitter voltage: ±20V Pulsed collector current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRS2184STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
на замовлення 2445 шт: термін постачання 21-30 дні (днів) |
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IRS2453DSTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: ballast controller; gate driver; high-/low-side Case: SO14 Output current: -260...180mA Power: 1W Number of channels: 4 Supply voltage: 10...16.6V DC Mounting: SMD Operating temperature: -25...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.12µs Turn-off time: 50ns |
на замовлення 2471 шт: термін постачання 21-30 дні (днів) |
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IR21094STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns |
на замовлення 1669 шт: термін постачання 21-30 дні (днів) |
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BAR6502VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC79 Mounting: SMD Type of diode: varicap Capacitance: 0.5pF Leakage current: 20nA Load current: 0.1A Max. forward voltage: 1V Max. off-state voltage: 30V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FM24CL64B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 1MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
FM24C64B-GTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 64kb FRAM Interface: I2C Memory organisation: 8kx8bit Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29AL008J55TFIR23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: CFI; parallel Operating voltage: 3...3.6V Access time: 55ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHA020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 100ns Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHB020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 100ns Kind of package: in-tray Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHB023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 100ns Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 100ns Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 100ns Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 100ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHIV10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 100ns Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 100ns Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHIV23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 100ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHV010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 100ns Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHV020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 100ns Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10DHV023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 100ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL256S10FHI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 100ns Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
CY15B204QN-40SXE | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8 Case: SOIC8 Mounting: SMD Kind of memory: FRAM Type of integrated circuit: FRAM memory Operating temperature: -40...125°C Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Clock frequency: 40MHz Memory organisation: 512kx8bit Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
CY15B204QN-40SXET | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8 Case: SOIC8 Mounting: SMD Kind of package: reel; tape Kind of memory: FRAM Type of integrated circuit: FRAM memory Operating temperature: -40...125°C Supply voltage: 1.8...3.6V DC Memory: 4Mb FRAM Clock frequency: 40MHz Memory organisation: 512kx8bit Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL01GT11DHIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Output voltage: 1.65...3.6V DC Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
S29GL01GT11DHIV23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Output voltage: 1.65...3.6V DC Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. |
IRF4104PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: tube
на замовлення 49 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 130.45 грн |
10+ | 84.71 грн |
15+ | 63.34 грн |
41+ | 59.38 грн |
1ED020I12F2XUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
на замовлення 992 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 272.84 грн |
5+ | 208.22 грн |
10+ | 198.72 грн |
13+ | 196.35 грн |
25+ | 189.22 грн |
1ED020I12FA2XUMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
товару немає в наявності
В кошику
од. на суму грн.
1ED020I12FXUMA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
товару немає в наявності
В кошику
од. на суму грн.
BFP640H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 4.1V
Current gain: 110...270
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 4.1V
Current gain: 110...270
Polarisation: bipolar
на замовлення 2737 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.52 грн |
15+ | 27.31 грн |
50+ | 21.77 грн |
57+ | 16.32 грн |
157+ | 15.43 грн |
BFP760H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 45GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 45GHz
Kind of transistor: HBT; RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Current gain: 160...400
Polarisation: bipolar
на замовлення 2096 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.73 грн |
21+ | 19.00 грн |
25+ | 17.10 грн |
57+ | 16.47 грн |
100+ | 15.12 грн |
250+ | 14.88 грн |
IPP039N04LGXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 94W
на замовлення 66 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 86.97 грн |
10+ | 63.34 грн |
18+ | 52.25 грн |
50+ | 49.09 грн |
IRFR8314TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Gate charge: 36nC
On-state resistance: 3.1mΩ
Power dissipation: 125W
Gate-source voltage: ±20V
Drain current: 127A
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 127A; 125W; DPAK
Mounting: SMD
Polarisation: unipolar
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Gate charge: 36nC
On-state resistance: 3.1mΩ
Power dissipation: 125W
Gate-source voltage: ±20V
Drain current: 127A
Drain-source voltage: 30V
товару немає в наявності
В кошику
од. на суму грн.
IPA80R900P7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Gate charge: 17nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 27W
Technology: CoolMOS™ P7
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Gate charge: 17nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 27W
Technology: CoolMOS™ P7
на замовлення 76 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 106.58 грн |
10+ | 77.59 грн |
17+ | 55.42 грн |
47+ | 52.25 грн |
BAS3005B02VH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. off-state voltage: 30V
Type of diode: Schottky rectifying
на замовлення 1660 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.64 грн |
37+ | 10.77 грн |
39+ | 10.21 грн |
100+ | 8.31 грн |
140+ | 6.65 грн |
385+ | 6.25 грн |
BTS6133D |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 8mΩ
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
на замовлення 26 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 290.74 грн |
4+ | 167.05 грн |
7+ | 133.01 грн |
20+ | 125.88 грн |
BTS6143D | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; DPAK5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DPAK5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
на замовлення 2585 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 195.25 грн |
8+ | 125.09 грн |
21+ | 118.76 грн |
500+ | 115.59 грн |
1000+ | 114.01 грн |
TT215N22KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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В кошику
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BA89202VH6127XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SC79; single diode; 120ns; Ufmax: 1V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SC79
Kind of package: reel; tape
Max. forward voltage: 1V
Capacitance: 0.6...1.4pF
Leakage current: 20nA
Reverse recovery time: 120ns
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
на замовлення 2272 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.33 грн |
97+ | 4.12 грн |
126+ | 3.14 грн |
403+ | 2.31 грн |
1107+ | 2.19 грн |
IRFSL4310ZPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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В кошику
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FF200R12KT4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.1kW
Topology: IGBT half-bridge
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 6394.62 грн |
FF45MR12W1M1B11BOMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 25A; AG-EASY1BM-2; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: AG-EASY1BM-2
Electrical mounting: Press-Fit
Polarisation: unipolar
On-state resistance: 45mΩ
Pulsed drain current: 50A
Technology: CoolSiC™; SiC
Gate-source voltage: -10...20V
Mechanical mounting: screw
Topology: MOSFET half-bridge; NTC thermistor
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 4121.55 грн |
IPAN70R750P7SXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Gate charge: 8.3nC
On-state resistance: 0.75Ω
Gate-source voltage: ±16V
Power dissipation: 20.8W
Technology: CoolMOS™ P7
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Gate charge: 8.3nC
On-state resistance: 0.75Ω
Gate-source voltage: ±16V
Power dissipation: 20.8W
Technology: CoolMOS™ P7
на замовлення 203 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.07 грн |
13+ | 30.48 грн |
32+ | 29.37 грн |
50+ | 26.76 грн |
BAS7006WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: common anode; double
Type of diode: Schottky switching
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.79 грн |
37+ | 10.93 грн |
100+ | 7.51 грн |
323+ | 2.90 грн |
886+ | 2.74 грн |
1EDN7550BXTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Case: PG-SOT23-6
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Case: PG-SOT23-6
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
на замовлення 1370 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.80 грн |
10+ | 53.36 грн |
25+ | 37.37 грн |
69+ | 35.39 грн |
IRLMS1902TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLMS1503TRPBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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В кошику
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IRFSL4010PBF | ![]() |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 19 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 318.03 грн |
8+ | 129.84 грн |
IRS2104SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
на замовлення 116 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 108.28 грн |
5+ | 95.80 грн |
13+ | 76.00 грн |
34+ | 71.25 грн |
IRFIZ24NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 13A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 13A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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В кошику
од. на суму грн.
BSS84PH6327XTSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 0.37nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 0.37nC
на замовлення 1545 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.35 грн |
38+ | 10.61 грн |
48+ | 8.39 грн |
72+ | 5.54 грн |
98+ | 4.07 грн |
123+ | 3.23 грн |
250+ | 2.71 грн |
399+ | 2.34 грн |
1097+ | 2.22 грн |
IPB65R099C6ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
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IPI65R099C6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
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В кошику
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IPL65R099C7AUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
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од. на суму грн.
IPP65R099C6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
товару немає в наявності
В кошику
од. на суму грн.
BAT6404WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: double series
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: double series
Type of diode: Schottky rectifying
на замовлення 4145 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.49 грн |
44+ | 9.18 грн |
52+ | 7.63 грн |
60+ | 6.62 грн |
100+ | 5.78 грн |
197+ | 4.75 грн |
500+ | 4.31 грн |
BAT6406WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 40V; 0.25A; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Type of diode: Schottky rectifying
на замовлення 10236 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 16.20 грн |
41+ | 9.66 грн |
57+ | 7.05 грн |
100+ | 6.18 грн |
184+ | 5.07 грн |
500+ | 4.67 грн |
IR11672ASTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Supply voltage: 11.4...18V DC
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Operating temperature: -40...125°C
Output current: -7...2A
Power: 625mW
Voltage class: 200V
Topology: flyback; push-pull; resonant LLC
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver
Supply voltage: 11.4...18V DC
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: SMPS
Operating temperature: -40...125°C
Output current: -7...2A
Power: 625mW
Voltage class: 200V
Topology: flyback; push-pull; resonant LLC
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 158.59 грн |
5+ | 125.09 грн |
9+ | 104.51 грн |
25+ | 98.17 грн |
50+ | 95.01 грн |
BAS7004WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: double series
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Max. off-state voltage: 70V
Semiconductor structure: double series
Type of diode: Schottky switching
на замовлення 985 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.49 грн |
41+ | 9.74 грн |
100+ | 6.50 грн |
228+ | 4.10 грн |
625+ | 3.88 грн |
IKW25N120CS7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-off time: 490ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-off time: 490ns
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IKW40N120CS7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 56A
Collector-emitter voltage: 1.2kV
Turn-on time: 45ns
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 56A
Collector-emitter voltage: 1.2kV
Turn-on time: 45ns
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
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IRS2184STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
на замовлення 2445 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 117.66 грн |
10+ | 79.96 грн |
12+ | 78.38 грн |
25+ | 72.05 грн |
50+ | 71.25 грн |
IRS2453DSTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
на замовлення 2471 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 127.89 грн |
10+ | 87.09 грн |
13+ | 77.59 грн |
34+ | 72.84 грн |
IR21094STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
на замовлення 1669 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 121.07 грн |
10+ | 83.92 грн |
13+ | 71.25 грн |
36+ | 68.09 грн |
250+ | 65.71 грн |
BAR6502VH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: varicap
Capacitance: 0.5pF
Leakage current: 20nA
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: varicap
Capacitance: 0.5pF
Leakage current: 20nA
Load current: 0.1A
Max. forward voltage: 1V
Max. off-state voltage: 30V
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FM24CL64B-DGTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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FM24C64B-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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S29AL008J55TFIR23 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29GL256S10DHA020 |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Application: automotive
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S29GL256S10DHB020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
Application: automotive
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S29GL256S10DHB023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
Application: automotive
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
Application: automotive
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S29GL256S10DHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
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S29GL256S10DHI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
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S29GL256S10DHI023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
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S29GL256S10DHIV10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
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S29GL256S10DHIV20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
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S29GL256S10DHIV23 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
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S29GL256S10DHV010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
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S29GL256S10DHV020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
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S29GL256S10DHV023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
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S29GL256S10FHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
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CY15B204QN-40SXE |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Operating temperature: -40...125°C
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Clock frequency: 40MHz
Memory organisation: 512kx8bit
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Operating temperature: -40...125°C
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Clock frequency: 40MHz
Memory organisation: 512kx8bit
Interface: SPI
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CY15B204QN-40SXET |
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Operating temperature: -40...125°C
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Clock frequency: 40MHz
Memory organisation: 512kx8bit
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 1.8÷3.6VDC; 40MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Operating temperature: -40...125°C
Supply voltage: 1.8...3.6V DC
Memory: 4Mb FRAM
Clock frequency: 40MHz
Memory organisation: 512kx8bit
Interface: SPI
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од. на суму грн.
S29GL01GT11DHIV20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11DHIV23 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
товару немає в наявності
В кошику
од. на суму грн.