Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149437) > Сторінка 2461 з 2491

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IPI024N06N3GXKSA1 IPI024N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69966EB25DC411C&compId=IPI024N06N3G-DTE.pdf?ci_sign=af4669f0517a60affc571042607d4f14e1306ced Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
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S29AL016J55TFNR10 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J55TFNR20 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70BAI010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J70BAI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFA010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S29AL016J70BFA013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S29AL016J70BFA023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S29AL016J70BFI012 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFI013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFI023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70BFN010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70BFN020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70FFI012 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70FFI020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J70FFI022 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S29AL016J70FFM020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S29AL016J70TFA020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S29AL016J70TFN010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70TFN013 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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S29AL016J70TFN020 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J70TFN023 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IPB083N15N5LF IPB083N15N5LF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CD8DE26E402749&compId=IPB083N15N5LF.pdf?ci_sign=80afe72410409132f9a6f39bef5e8c7152f678f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.3mΩ
Drain current: 66A
Gate-source voltage: ±20V
Power dissipation: 179W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB054N06N3GATMA1 IPB054N06N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5EC939E60811C&compId=IPB054N06N3G-DTE.pdf?ci_sign=84f615a05cf8a8d54ec1b710306fbe75a60d1fe9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IDM02G120C5XTMA1 IDM02G120C5XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBA3490FE516FA8&compId=IDM02G120C5-DTE.pdf?ci_sign=39f02fd9a145e2170f3e498cb765e81a39c4fb99 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Mounting: SMD
Case: PG-TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1.2µA
Load current: 2A
Power dissipation: 98W
Max. forward voltage: 1.4V
Max. forward impulse current: 31A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: CoolSiC™ 5G; SiC
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BSC014N06NSATMA1 BSC014N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25F431FB8811C&compId=BSC014N06NS-DTE.pdf?ci_sign=89be9cef3c84b02cc52bd76782f1cbbbafd2f7d6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BAT5402VH6327XTSA1 BAT5402VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5B1820&compId=Infineon-BAT54SERIES-DS-v01_01-en.pdf?ci_sign=9d415fac4e4038a2e5066020b8f03e621cda1497 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
на замовлення 8880 шт:
термін постачання 21-30 дні (днів)
39+11.08 грн
50+8.08 грн
61+6.54 грн
100+5.91 грн
286+3.27 грн
500+3.26 грн
786+3.09 грн
3000+2.97 грн
Мінімальне замовлення: 39
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IPZ60R040C7XKSA1 IPZ60R040C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59552626D78D1BF&compId=IPZ60R040C7-DTE.pdf?ci_sign=1d1709cb23ef90f3adae91e68c26105e3f8c2550 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+989.03 грн
В кошику  од. на суму  грн.
AUIRFR8405TRL INFINEON TECHNOLOGIES auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
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S25FL128SAGMFIR11 INFINEON TECHNOLOGIES infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Type of integrated circuit: FLASH memory
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S25FL256SAGMFIR11 INFINEON TECHNOLOGIES infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 256Mb FLASH
Type of integrated circuit: FLASH memory
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S25FL512SAGMFIR11 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
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IRF200P223 IRF200P223 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5C60D032C6A18&compId=IRF200P223.pdf?ci_sign=e6665466486189b4a31e5651bceddce5d8357e7a Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: StrongIRFET™
Gate charge: 102nC
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+427.16 грн
4+297.68 грн
В кошику  од. на суму  грн.
AUIRFB8407 AUIRFB8407 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBEF63752B5EA&compId=AUIRFB8407.pdf?ci_sign=77c7432b80b269846f5e47385d4aa9b20e3cd3ad Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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AUIRFSL8407 AUIRFSL8407 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBE382C02195EA&compId=AUIRFSL8407.pdf?ci_sign=4c0550a9897f895e27738a49f082a991e26f4267 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Technology: HEXFET®
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IRF7380TRPBF IRF7380TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A1416FA3A7F1A303005056AB0C4F&compId=irf7380pbf.pdf?ci_sign=43b47160500444f3ece01f173324f425d2669bea Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRFB8405 AUIRFB8405 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBC936327F5EA&compId=AUIRFB8405.pdf?ci_sign=7b480d6d4381ed9eff5cd4a93dd04a3a2f195ed0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
2+363.21 грн
3+297.68 грн
4+267.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRFB8409 AUIRFB8409 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBC0B3419C15EA&compId=AUIRFB8409.pdf?ci_sign=7f12e48652dc15e699fd5e099a6f836db55a2bbf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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SPP18P06PHXKSA1 SPP18P06PHXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92E1526F3291CC&compId=SPP18P06PHXKSA1-DTE.pdf?ci_sign=31d8bff6b49e66865ad7bc0fc966b6524742fb2f Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 430 шт:
термін постачання 21-30 дні (днів)
3+146.65 грн
5+126.67 грн
10+114.80 грн
19+49.88 грн
51+47.50 грн
Мінімальне замовлення: 3
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IR38263MTRPBFAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE379BD04F3D5&compId=IR38263M.pdf?ci_sign=f4a4112111a3d25c5f97e732653620611218005c Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Topology: buck
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Interface: PMBus; PVID
Number of channels: 1
Kind of package: reel; tape
Operating temperature: -40...125°C
DC supply current: 50mA
Output current: 30A
Output voltage: 0.5...14V DC
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
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BSC110N06NS3GATMA1 BSC110N06NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D96AA8069611C&compId=BSC110N06NS3G-DTE.pdf?ci_sign=00f412b49613db1927099a64c96e7667ef282ced Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC110N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 48A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Pulsed drain current: 304A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
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BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9A69886D211C&compId=BSC117N08NS5-DTE.pdf?ci_sign=23efda944c0554f017e600157a0f280e1d331efa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.7mΩ
Drain current: 49A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
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BSC118N10NSGATMA1 BSC118N10NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9DCDB846011C&compId=BSC118N10NSG-DTE.pdf?ci_sign=677f6c93c2498a7ba9596957c0f0ef730c263662 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.8mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
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BSC123N10LSGATMA1 BSC123N10LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA96CD3C5811C&compId=BSC123N10LSG-DTE.pdf?ci_sign=502e468ba211a3d90ef62890cb82e0b16657e541 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12.3mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
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BSC12DN20NS3GATMA1 BSC12DN20NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6CDBBD7E411C&compId=BSC12DN20NS3G-DTE.pdf?ci_sign=a25373e9ee75a46b52f6339ff91ce7cebfbad060 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 11.3A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC16DN25NS3GATMA1 BSC16DN25NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6DE8A553411C&compId=BSC16DN25NS3G-DTE.pdf?ci_sign=da8a4c7c5c75536fe143cf3873658d8ba84f863b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.165Ω
Drain current: 10.9A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC190N12NS3GATMA1 BSC190N12NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC63B17224A11C&compId=BSC190N12NS3G-DTE.pdf?ci_sign=350ea8f47ffd494294b14350634a85a9fee75355 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 69W
Drain-source voltage: 120V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC196N10NSGATMA1 BSC196N10NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB2068F3D811C&compId=BSC196N10NSG-DTE.pdf?ci_sign=da8b6e507176b595fdb7cb5dc1e045ec2ef98bb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19.6mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
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SPD03N60C3ATMA1 INFINEON TECHNOLOGIES SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
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IRL3103STRLPBF IRL3103STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22273FCEE86BBF1A303005056AB0C4F&compId=irl3103spbf.pdf?ci_sign=d3447635fefbe0b4d19b7a54228f1edac8d3a79e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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TLS115B0LDXUMA1 TLS115B0LDXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADAE85089093D7&compId=TLS115B0.pdf?ci_sign=c0954877c01959537d5d1b55d069f99ae4a2cf48 Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
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BTS50080-1TEA BTS50080-1TEA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF530CCC8920745&compId=BTS500801TEA.pdf?ci_sign=8180324bf2579b770ec16da1ab15a35b2d277daf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Output voltage: 39V
Technology: High Current PROFET
Kind of output: N-Channel
Supply voltage: 5.5...30V DC
на замовлення 515 шт:
термін постачання 21-30 дні (днів)
2+331.67 грн
7+140.13 грн
19+133.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSR316PH6327XTSA1 BSR316PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB0E568564745&compId=BSR316PH6327XTSA1.pdf?ci_sign=00502fbe6cd0200668e7560cc4589d7a1438ad5e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Technology: SIPMOS™
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: SC59
на замовлення 1079 шт:
термін постачання 21-30 дні (днів)
13+34.10 грн
17+23.67 грн
50+19.16 грн
61+15.28 грн
168+14.41 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
ITS5215L ITS5215L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698B3D160A98469&compId=ITS5215L.pdf?ci_sign=c29e04078cac09645894d0116ce0724b692e413a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 70mΩ
Number of channels: 2
Output current: 3.7A
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
на замовлення 216 шт:
термін постачання 21-30 дні (днів)
3+154.38 грн
8+125.09 грн
21+118.76 грн
25+114.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE7250VSJXUMA1 TLE7250VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE6173550792259&compId=TLE7250V.pdf?ci_sign=5318c72f3b3a8a32a168011b3ffa7f06c26ac0aa Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
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TLE7251VSJXUMA1 TLE7251VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5C83B113AA259&compId=TLE7251V.pdf?ci_sign=6c135a20cec3e8d56ad544eb4ddfc054300b9a72 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
товару немає в наявності
В кошику  од. на суму  грн.
TLE7257SJXUMA1 TLE7257SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2E1B1C506EA14&compId=TLE7257.pdf?ci_sign=2ddfec743c1f2fd230310522ebad0f66ab6ceb81 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
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TLE7268SKXUMA1 TLE7268SKXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
товару немає в наявності
В кошику  од. на суму  грн.
TLE7250SJXUMA1 TLE7250SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE60134B0678259&compId=TLE7250.pdf?ci_sign=f59479f7b4ec512bd12903b7d6900dfed7d45d75 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
товару немає в наявності
В кошику  од. на суму  грн.
IPI024N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A69966EB25DC411C&compId=IPI024N06N3G-DTE.pdf?ci_sign=af4669f0517a60affc571042607d4f14e1306ced
IPI024N06N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
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В кошику  од. на суму  грн.
S29AL016J55TFNR10 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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S29AL016J55TFNR20 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 3...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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В кошику  од. на суму  грн.
S29AL016J70BAI010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J70BAI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику  од. на суму  грн.
S29AL016J70BFA010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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В кошику  од. на суму  грн.
S29AL016J70BFA013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFA023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFI012 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFI013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70BFI023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику  од. на суму  грн.
S29AL016J70BFN010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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В кошику  од. на суму  грн.
S29AL016J70BFN020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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В кошику  од. на суму  грн.
S29AL016J70FFI012 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику  од. на суму  грн.
S29AL016J70FFI020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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S29AL016J70FFI022 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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В кошику  од. на суму  грн.
S29AL016J70FFM020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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В кошику  од. на суму  грн.
S29AL016J70TFA020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70TFN010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70TFN013 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70TFN020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
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В кошику  од. на суму  грн.
S29AL016J70TFN023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IPB083N15N5LF pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1CD8DE26E402749&compId=IPB083N15N5LF.pdf?ci_sign=80afe72410409132f9a6f39bef5e8c7152f678f0
IPB083N15N5LF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 66A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.3mΩ
Drain current: 66A
Gate-source voltage: ±20V
Power dissipation: 179W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
IPB054N06N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5EC939E60811C&compId=IPB054N06N3G-DTE.pdf?ci_sign=84f615a05cf8a8d54ec1b710306fbe75a60d1fe9
IPB054N06N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IDM02G120C5XTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBA3490FE516FA8&compId=IDM02G120C5-DTE.pdf?ci_sign=39f02fd9a145e2170f3e498cb765e81a39c4fb99
IDM02G120C5XTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Mounting: SMD
Case: PG-TO252-2
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1.2µA
Load current: 2A
Power dissipation: 98W
Max. forward voltage: 1.4V
Max. forward impulse current: 31A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Technology: CoolSiC™ 5G; SiC
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BSC014N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25F431FB8811C&compId=BSC014N06NS-DTE.pdf?ci_sign=89be9cef3c84b02cc52bd76782f1cbbbafd2f7d6
BSC014N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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BAT5402VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5B1820&compId=Infineon-BAT54SERIES-DS-v01_01-en.pdf?ci_sign=9d415fac4e4038a2e5066020b8f03e621cda1497
BAT5402VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
на замовлення 8880 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.08 грн
50+8.08 грн
61+6.54 грн
100+5.91 грн
286+3.27 грн
500+3.26 грн
786+3.09 грн
3000+2.97 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
IPZ60R040C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59552626D78D1BF&compId=IPZ60R040C7-DTE.pdf?ci_sign=1d1709cb23ef90f3adae91e68c26105e3f8c2550
IPZ60R040C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+989.03 грн
В кошику  од. на суму  грн.
AUIRFR8405TRL auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
товару немає в наявності
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S25FL128SAGMFIR11 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Type of integrated circuit: FLASH memory
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S25FL256SAGMFIR11 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 256Mb FLASH
Type of integrated circuit: FLASH memory
товару немає в наявності
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S25FL512SAGMFIR11 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
товару немає в наявності
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IRF200P223 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5C60D032C6A18&compId=IRF200P223.pdf?ci_sign=e6665466486189b4a31e5651bceddce5d8357e7a
IRF200P223
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: StrongIRFET™
Gate charge: 102nC
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+427.16 грн
4+297.68 грн
В кошику  од. на суму  грн.
AUIRFB8407 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBEF63752B5EA&compId=AUIRFB8407.pdf?ci_sign=77c7432b80b269846f5e47385d4aa9b20e3cd3ad
AUIRFB8407
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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AUIRFSL8407 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBE382C02195EA&compId=AUIRFSL8407.pdf?ci_sign=4c0550a9897f895e27738a49f082a991e26f4267
AUIRFSL8407
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Technology: HEXFET®
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IRF7380TRPBF pVersion=0046&contRep=ZT&docId=E221A1416FA3A7F1A303005056AB0C4F&compId=irf7380pbf.pdf?ci_sign=43b47160500444f3ece01f173324f425d2669bea
IRF7380TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIRFB8405 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBC936327F5EA&compId=AUIRFB8405.pdf?ci_sign=7b480d6d4381ed9eff5cd4a93dd04a3a2f195ed0
AUIRFB8405
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+363.21 грн
3+297.68 грн
4+267.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRFB8409 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBC0B3419C15EA&compId=AUIRFB8409.pdf?ci_sign=7f12e48652dc15e699fd5e099a6f836db55a2bbf
AUIRFB8409
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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SPP18P06PHXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92E1526F3291CC&compId=SPP18P06PHXKSA1-DTE.pdf?ci_sign=31d8bff6b49e66865ad7bc0fc966b6524742fb2f
SPP18P06PHXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 430 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+146.65 грн
5+126.67 грн
10+114.80 грн
19+49.88 грн
51+47.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IR38263MTRPBFAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE379BD04F3D5&compId=IR38263M.pdf?ci_sign=f4a4112111a3d25c5f97e732653620611218005c
Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Mounting: SMD
Topology: buck
Type of integrated circuit: PMIC
Kind of integrated circuit: POL converter
Case: PQFN5X7
Interface: PMBus; PVID
Number of channels: 1
Kind of package: reel; tape
Operating temperature: -40...125°C
DC supply current: 50mA
Output current: 30A
Output voltage: 0.5...14V DC
Supply voltage: 4.5...5.5V
Input voltage: 5.3...16V DC
Frequency: 0.15...1.5MHz
товару немає в наявності
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BSC110N06NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D96AA8069611C&compId=BSC110N06NS3G-DTE.pdf?ci_sign=00f412b49613db1927099a64c96e7667ef282ced
BSC110N06NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC110N15NS5ATMA1 Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 48A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Pulsed drain current: 304A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
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BSC117N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9A69886D211C&compId=BSC117N08NS5-DTE.pdf?ci_sign=23efda944c0554f017e600157a0f280e1d331efa
BSC117N08NS5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.7mΩ
Drain current: 49A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 80V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Polarisation: unipolar
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BSC118N10NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9DCDB846011C&compId=BSC118N10NSG-DTE.pdf?ci_sign=677f6c93c2498a7ba9596957c0f0ef730c263662
BSC118N10NSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11.8mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
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BSC123N10LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA96CD3C5811C&compId=BSC123N10LSG-DTE.pdf?ci_sign=502e468ba211a3d90ef62890cb82e0b16657e541
BSC123N10LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12.3mΩ
Drain current: 71A
Gate-source voltage: ±20V
Power dissipation: 114W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
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BSC12DN20NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6CDBBD7E411C&compId=BSC12DN20NS3G-DTE.pdf?ci_sign=a25373e9ee75a46b52f6339ff91ce7cebfbad060
BSC12DN20NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 11.3A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC16DN25NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6DE8A553411C&compId=BSC16DN25NS3G-DTE.pdf?ci_sign=da8a4c7c5c75536fe143cf3873658d8ba84f863b
BSC16DN25NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
On-state resistance: 0.165Ω
Drain current: 10.9A
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC190N12NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC63B17224A11C&compId=BSC190N12NS3G-DTE.pdf?ci_sign=350ea8f47ffd494294b14350634a85a9fee75355
BSC190N12NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 69W
Drain-source voltage: 120V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC196N10NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB2068F3D811C&compId=BSC196N10NSG-DTE.pdf?ci_sign=da8b6e507176b595fdb7cb5dc1e045ec2ef98bb3
BSC196N10NSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
On-state resistance: 19.6mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 78W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Case: PG-TDSON-8
Polarisation: unipolar
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SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
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IRL3103STRLPBF pVersion=0046&contRep=ZT&docId=E22273FCEE86BBF1A303005056AB0C4F&compId=irl3103spbf.pdf?ci_sign=d3447635fefbe0b4d19b7a54228f1edac8d3a79e
IRL3103STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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TLS115B0LDXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADAE85089093D7&compId=TLS115B0.pdf?ci_sign=c0954877c01959537d5d1b55d069f99ae4a2cf48
TLS115B0LDXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
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BTS50080-1TEA pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF530CCC8920745&compId=BTS500801TEA.pdf?ci_sign=8180324bf2579b770ec16da1ab15a35b2d277daf
BTS50080-1TEA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Output voltage: 39V
Technology: High Current PROFET
Kind of output: N-Channel
Supply voltage: 5.5...30V DC
на замовлення 515 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+331.67 грн
7+140.13 грн
19+133.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSR316PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB0E568564745&compId=BSR316PH6327XTSA1.pdf?ci_sign=00502fbe6cd0200668e7560cc4589d7a1438ad5e
BSR316PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Technology: SIPMOS™
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -290mA
On-state resistance: 2.2Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: SC59
на замовлення 1079 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.10 грн
17+23.67 грн
50+19.16 грн
61+15.28 грн
168+14.41 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
ITS5215L pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698B3D160A98469&compId=ITS5215L.pdf?ci_sign=c29e04078cac09645894d0116ce0724b692e413a
ITS5215L
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 70mΩ
Number of channels: 2
Output current: 3.7A
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
на замовлення 216 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+154.38 грн
8+125.09 грн
21+118.76 грн
25+114.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE7250VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE6173550792259&compId=TLE7250V.pdf?ci_sign=5318c72f3b3a8a32a168011b3ffa7f06c26ac0aa
TLE7250VSJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
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TLE7251VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5C83B113AA259&compId=TLE7251V.pdf?ci_sign=6c135a20cec3e8d56ad544eb4ddfc054300b9a72
TLE7251VSJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
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TLE7257SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2E1B1C506EA14&compId=TLE7257.pdf?ci_sign=2ddfec743c1f2fd230310522ebad0f66ab6ceb81
TLE7257SJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
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TLE7268SKXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463
TLE7268SKXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
товару немає в наявності
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TLE7250SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE60134B0678259&compId=TLE7250.pdf?ci_sign=f59479f7b4ec512bd12903b7d6900dfed7d45d75
TLE7250SJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
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