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XMC4800E196F1024AAXQMA1 XMC4800E196F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
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IPW60R330P6FKSA1 IPW60R330P6FKSA1 INFINEON TECHNOLOGIES IPW60R330P6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 7.6A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Gate charge: 22nC
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
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IPA60R330P6XKSA1 IPA60R330P6XKSA1 INFINEON TECHNOLOGIES IPA60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
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BFP405E6327 BFP405E6327 INFINEON TECHNOLOGIES BFP405.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4.5V; 12mA; 0.075W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 12mA
Power dissipation: 75mW
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
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BSZ123N08NS3GATMA1 BSZ123N08NS3GATMA1 INFINEON TECHNOLOGIES BSZ123N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 40A
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TLE7250VSJXUMA1 TLE7250VSJXUMA1 INFINEON TECHNOLOGIES TLE7250V.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7251VSJXUMA1 TLE7251VSJXUMA1 INFINEON TECHNOLOGIES TLE7251V.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7257SJXUMA1 TLE7257SJXUMA1 INFINEON TECHNOLOGIES TLE7257.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
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TLE7268SKXUMA1 TLE7268SKXUMA1 INFINEON TECHNOLOGIES TLE7268LCXUMA1.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
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TLE7250SJXUMA1 TLE7250SJXUMA1 INFINEON TECHNOLOGIES TLE7250.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7250XSJXUMA1 TLE7250XSJXUMA1 INFINEON TECHNOLOGIES TLE7250X.pdf Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7258DXUMA1 TLE7258DXUMA1 INFINEON TECHNOLOGIES TLE7258D.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
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TLE7268LCXUMA1 INFINEON TECHNOLOGIES TLE7268LCXUMA1.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
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FM24CL16B-DG INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
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FM24CL16B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IPA65R095C7XKSA1 IPA65R095C7XKSA1 INFINEON TECHNOLOGIES IPA65R095C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 34W; TO220FP
Technology: CoolMOS™
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 34W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
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IPL65R195C7AUMA1 IPL65R195C7AUMA1 INFINEON TECHNOLOGIES IPL65R195C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 75W; PG-VSON-4
Technology: CoolMOS™
Mounting: SMD
Case: PG-VSON-4
Power dissipation: 75W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 0.195Ω
Type of transistor: N-MOSFET
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DD171N16KHPSA2 DD171N16KHPSA2 INFINEON TECHNOLOGIES DD171N18K.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 171A; BG-PB34-1; screw
Type of module: diode
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.26V
Load current: 171A
Semiconductor structure: double series
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Case: BG-PB34-1
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+11740.19 грн
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TT251N16KOFHPSA1 TT251N16KOFHPSA1 INFINEON TECHNOLOGIES TT251N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Type of module: thyristor
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.4V
Load current: 251A
Semiconductor structure: double series
Gate current: 300mA
Max. forward impulse current: 9.1kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: BG-PB50-1
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+15509.24 грн
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TT250N18KOFHPSA1 TT250N18KOFHPSA1 INFINEON TECHNOLOGIES TT250N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50-1
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+14983.98 грн
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DD285N02KHPSA1 DD285N02KHPSA1 INFINEON TECHNOLOGIES DD285N04K.pdf Category: Diode modules
Description: Module: diode; double series; 200V; If: 285A; BG-PB50-1; Ifsm: 8.3kA
Type of module: diode
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 285A
Semiconductor structure: double series
Max. forward impulse current: 8.3kA
Electrical mounting: screw
Mechanical mounting: screw
Case: BG-PB50-1
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+11465.21 грн
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IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES IPW60R099CP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+652.05 грн
3+430.41 грн
6+406.71 грн
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IRFR3910TRLPBF IRFR3910TRLPBF INFINEON TECHNOLOGIES irfr3910pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES IKCM15H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+820.83 грн
2+577.95 грн
5+546.61 грн
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BTF3125EJXUMA1 INFINEON TECHNOLOGIES BTF3125EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Supply voltage: 3...5.5V DC
On-state resistance: 0.11Ω
Turn-on time: 1.35µs
Turn-off time: 2µs
Output voltage: 40V
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1W
Kind of package: reel; tape
Technology: HITFET®
Kind of integrated circuit: low-side
Operating temperature: -40...150°C
Case: PG-TDSO-8-31
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IRF8714TRPBF IRF8714TRPBF INFINEON TECHNOLOGIES irf8714pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY62136EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136FV30LL-45BVXIT INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136FV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136ESL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62136ESL_MoBL(R)_2-Mbit_(128_K_X_16)_Static_RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeeecb32e8 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
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CY62136EV30LL-45BVXI INFINEON TECHNOLOGIES Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62136FV30LL-45BVXI INFINEON TECHNOLOGIES Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62136FV30LL-45ZSXA INFINEON TECHNOLOGIES Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62136FV30LL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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IRFH9310TRPBF IRFH9310TRPBF INFINEON TECHNOLOGIES irfh9310pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
на замовлення 3480 шт:
термін постачання 21-30 дні (днів)
4+102.91 грн
10+81.04 грн
15+62.69 грн
40+59.63 грн
250+57.34 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IR4311MTRPBF IR4311MTRPBF INFINEON TECHNOLOGIES IR4311MTRPBF.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Amplifier class: D
Type of integrated circuit: audio amplifier
Number of channels: 1
Output power: 35W
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IRFH5007TRPBF IRFH5007TRPBF INFINEON TECHNOLOGIES irfh5007pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH8307TRPBF IRFH8307TRPBF INFINEON TECHNOLOGIES IRFH8307TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRFH4251DTRPBF IRFH4251DTRPBF INFINEON TECHNOLOGIES irfh4251dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Trade name: FastIRFET
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IRFH7446TRPBF IRFH7446TRPBF INFINEON TECHNOLOGIES IRFH7446TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Drain-source voltage: 40V
Drain current: 117A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel
Gate charge: 65nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
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IRFH8303TRPBF IRFH8303TRPBF INFINEON TECHNOLOGIES IRFH8303TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRFH8316TRPBF IRFH8316TRPBF INFINEON TECHNOLOGIES IRFH8316TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRLH5030TRPBF IRLH5030TRPBF INFINEON TECHNOLOGIES irlh5030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRFH5215TRPBF IRFH5215TRPBF INFINEON TECHNOLOGIES irfh5215pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH7934TRPBF IRFH7934TRPBF INFINEON TECHNOLOGIES irfh7934pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH8321TRPBF IRFH8321TRPBF INFINEON TECHNOLOGIES IRFH8321TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH8325TRPBF IRFH8325TRPBF INFINEON TECHNOLOGIES irfh8325pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH4210DTRPBF IRFH4210DTRPBF INFINEON TECHNOLOGIES irfh4210dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Trade name: FastIRFET
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IRFH5210TRPBF IRFH5210TRPBF INFINEON TECHNOLOGIES irfh5210pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8311TRPBF IRFH8311TRPBF INFINEON TECHNOLOGIES IRFH8311TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH5020TRPBF IRFH5020TRPBF INFINEON TECHNOLOGIES irfh5020pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH5025TRPBF IRFH5025TRPBF INFINEON TECHNOLOGIES irfh5025pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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CY7C1399BN-12VXI INFINEON TECHNOLOGIES Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
Part status: Not recommended for new designs
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CY7C1399BN-12VXIT INFINEON TECHNOLOGIES Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Part status: Not recommended for new designs
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CY7C199D-10VXIT INFINEON TECHNOLOGIES Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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BAT5403WE6327HTSA1 BAT5403WE6327HTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; 230mW
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323
на замовлення 4473 шт:
термін постачання 21-30 дні (днів)
21+19.76 грн
30+13.15 грн
37+10.46 грн
50+9.37 грн
205+4.46 грн
562+4.21 грн
3000+4.07 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
TZ400N26KOFHPSA1 TZ400N26KOFHPSA1 INFINEON TECHNOLOGIES TZ400N26KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.6kV; 400A; BG-PB501-1
Semiconductor structure: single thyristor
Gate current: 300mA
Max. forward impulse current: 13kA
Case: BG-PB501-1
Max. forward voltage: 1.88V
Max. off-state voltage: 2.6kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Load current: 400A
Type of module: thyristor
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IHW30N135R3FKSA1 IHW30N135R3FKSA1 INFINEON TECHNOLOGIES DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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IRF9362TRPBF IRF9362TRPBF INFINEON TECHNOLOGIES irf9362pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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XMC4800E196F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196F1024AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
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IPW60R330P6FKSA1 IPW60R330P6.pdf
IPW60R330P6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 7.6A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 93W
Polarisation: unipolar
Gate charge: 22nC
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
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IPA60R330P6XKSA1 IPA60R330P6-DTE.pdf
IPA60R330P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 12A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Technology: CoolMOS™ P6
Kind of channel: enhancement
Gate-source voltage: ±20V
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BFP405E6327 BFP405.pdf
BFP405E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 4.5V; 12mA; 0.075W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 12mA
Power dissipation: 75mW
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
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BSZ123N08NS3GATMA1 BSZ123N08NS3G-DTE.pdf
BSZ123N08NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 40A
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TLE7250VSJXUMA1 TLE7250V.pdf
TLE7250VSJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7251VSJXUMA1 TLE7251V.pdf
TLE7251VSJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7257SJXUMA1 TLE7257.pdf
TLE7257SJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
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TLE7268SKXUMA1 TLE7268LCXUMA1.pdf
TLE7268SKXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
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TLE7250SJXUMA1 TLE7250.pdf
TLE7250SJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7250XSJXUMA1 TLE7250X.pdf
TLE7250XSJXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Interface: CAN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 60mA
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TLE7258DXUMA1 TLE7258D.pdf
TLE7258DXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-8
Number of receivers: 1
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 1
DC supply current: 3mA
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TLE7268LCXUMA1 TLE7268LCXUMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...40V DC
Interface: LIN
Mounting: SMD
Case: PG-TSON-14
Number of receivers: 2
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
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FM24CL16B-DG Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
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FM24CL16B-DGTR Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IPA65R095C7XKSA1 IPA65R095C7-DTE.pdf
IPA65R095C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 34W; TO220FP
Technology: CoolMOS™
Mounting: THT
Case: TO220FP
Kind of package: tube
Power dissipation: 34W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
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IPL65R195C7AUMA1 IPL65R195C7-DTE.pdf
IPL65R195C7AUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 75W; PG-VSON-4
Technology: CoolMOS™
Mounting: SMD
Case: PG-VSON-4
Power dissipation: 75W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 0.195Ω
Type of transistor: N-MOSFET
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DD171N16KHPSA2 DD171N18K.pdf
DD171N16KHPSA2
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 171A; BG-PB34-1; screw
Type of module: diode
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.26V
Load current: 171A
Semiconductor structure: double series
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Case: BG-PB34-1
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+11740.19 грн
В кошику  од. на суму  грн.
TT251N16KOFHPSA1 TT251N18KOF.pdf
TT251N16KOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Type of module: thyristor
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.4V
Load current: 251A
Semiconductor structure: double series
Gate current: 300mA
Max. forward impulse current: 9.1kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: BG-PB50-1
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+15509.24 грн
В кошику  од. на суму  грн.
TT250N18KOFHPSA1 TT250N18KOF.pdf
TT250N18KOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Max. off-state voltage: 1.8kV
Max. forward voltage: 1.5V
Load current: 250A
Semiconductor structure: double series
Gate current: 200mA
Max. forward impulse current: 7kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB50-1
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+14983.98 грн
В кошику  од. на суму  грн.
DD285N02KHPSA1 DD285N04K.pdf
DD285N02KHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 200V; If: 285A; BG-PB50-1; Ifsm: 8.3kA
Type of module: diode
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 285A
Semiconductor structure: double series
Max. forward impulse current: 8.3kA
Electrical mounting: screw
Mechanical mounting: screw
Case: BG-PB50-1
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+11465.21 грн
В кошику  од. на суму  грн.
IPW60R099CPFKSA1 IPW60R099CP.pdf
IPW60R099CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+652.05 грн
3+430.41 грн
6+406.71 грн
В кошику  од. на суму  грн.
IRFR3910TRLPBF irfr3910pbf.pdf
IRFR3910TRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IKCM15H60GAXKMA2 IKCM15H60GA.pdf
IKCM15H60GAXKMA2
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+820.83 грн
2+577.95 грн
5+546.61 грн
В кошику  од. на суму  грн.
BTF3125EJXUMA1 BTF3125EJ.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Supply voltage: 3...5.5V DC
On-state resistance: 0.11Ω
Turn-on time: 1.35µs
Turn-off time: 2µs
Output voltage: 40V
Output current: 2A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Power dissipation: 1W
Kind of package: reel; tape
Technology: HITFET®
Kind of integrated circuit: low-side
Operating temperature: -40...150°C
Case: PG-TDSO-8-31
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IRF8714TRPBF irf8714pbf.pdf
IRF8714TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY62136EV30LL-45BVXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136EV30LL-45ZSXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136FV30LL-45BVXIT
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Operating temperature: -40...85°C
Case: VFBGA48
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136FV30LL-45ZSXIT Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Operating temperature: -40...85°C
Case: TSOP44 II
Supply voltage: 2.2...3.6V DC
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 2Mb SRAM
Mounting: SMD
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CY62136ESL-45ZSXI Infineon-CY62136ESL_MoBL(R)_2-Mbit_(128_K_X_16)_Static_RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeeecb32e8
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC; 4.5...5.5V DC
товару немає в наявності
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CY62136EV30LL-45BVXI Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62136FV30LL-45BVXI Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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CY62136FV30LL-45ZSXA
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
товару немає в наявності
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CY62136FV30LL-45ZSXI Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 45ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
товару немає в наявності
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IRFH9310TRPBF irfh9310pbf.pdf
IRFH9310TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -17A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
на замовлення 3480 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+102.91 грн
10+81.04 грн
15+62.69 грн
40+59.63 грн
250+57.34 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IR4311MTRPBF IR4311MTRPBF.pdf
IR4311MTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Amplifier class: D
Type of integrated circuit: audio amplifier
Number of channels: 1
Output power: 35W
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IRFH5007TRPBF irfh5007pbf.pdf
IRFH5007TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 17A; 250W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 17A
Power dissipation: 250W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH8307TRPBF IRFH8307TRPBF.pdf
IRFH8307TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRFH4251DTRPBF irfh4251dpbf.pdf
IRFH4251DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 31W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 31W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Trade name: FastIRFET
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IRFH7446TRPBF IRFH7446TRPBF.pdf
IRFH7446TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 117A; 78W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Drain-source voltage: 40V
Drain current: 117A
On-state resistance: 3.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Kind of package: reel
Gate charge: 65nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Trade name: StrongIRFET
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IRFH8303TRPBF IRFH8303TRPBF.pdf
IRFH8303TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 280A; 156W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 280A
Power dissipation: 156W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRFH8316TRPBF IRFH8316TRPBF.pdf
IRFH8316TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRLH5030TRPBF irlh5030pbf.pdf
IRLH5030TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRFH5215TRPBF irfh5215pbf.pdf
IRFH5215TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH7934TRPBF irfh7934pbf.pdf
IRFH7934TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 3.1W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 3.1W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH8321TRPBF IRFH8321TRPBF.pdf
IRFH8321TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.4W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.4W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH8325TRPBF irfh8325pbf.pdf
IRFH8325TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH4210DTRPBF irfh4210dpbf.pdf
IRFH4210DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 255A; 3.5W; PQFN5X6; FastIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 255A
Power dissipation: 3.5W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Trade name: FastIRFET
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IRFH5210TRPBF irfh5210pbf.pdf
IRFH5210TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH8311TRPBF IRFH8311TRPBF.pdf
IRFH8311TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH5020TRPBF irfh5020pbf.pdf
IRFH5020TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.1A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.1A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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IRFH5025TRPBF irfh5025pbf.pdf
IRFH5025TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3.8A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 3.8A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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CY7C1399BN-12VXI Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel; tube
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 3...3.6V DC
Part status: Not recommended for new designs
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CY7C1399BN-12VXIT Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 12ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 12ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Part status: Not recommended for new designs
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CY7C199D-10VXIT Infineon-CY7C199D_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf20333330&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
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BAT5403WE6327HTSA1 BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf
BAT5403WE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 30V; 0.2A; 230mW
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOD323
на замовлення 4473 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+19.76 грн
30+13.15 грн
37+10.46 грн
50+9.37 грн
205+4.46 грн
562+4.21 грн
3000+4.07 грн
Мінімальне замовлення: 21
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TZ400N26KOFHPSA1 TZ400N26KOF.pdf
TZ400N26KOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.6kV; 400A; BG-PB501-1
Semiconductor structure: single thyristor
Gate current: 300mA
Max. forward impulse current: 13kA
Case: BG-PB501-1
Max. forward voltage: 1.88V
Max. off-state voltage: 2.6kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Load current: 400A
Type of module: thyristor
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IHW30N135R3FKSA1 DS_IHW30N135R3_2_1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433a047ba0013a7314865a3a88
IHW30N135R3FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 175W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 175W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 263nC
Kind of package: tube
Turn-off time: 510ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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IRF9362TRPBF irf9362pbf.pdf
IRF9362TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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