Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149543) > Сторінка 2461 з 2493
Фото | Назва | Виробник | Інформація |
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1EDF5673FXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16 Technology: EiceDRIVER™; GaN Case: PG-DSO-16 Mounting: SMD Kind of package: reel; tape Voltage class: 650V Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Topology: single transistor Output current: -8...4A Number of channels: 1 Supply voltage: 3...3.5V; 6.5...20V Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFH7110TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFTS9342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6 Kind of package: reel Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -5.8A Power dissipation: 2W Case: TSOP6 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFTS8342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.2A Power dissipation: 2W Technology: HEXFET® Kind of channel: enhancement |
на замовлення 1930 шт: термін постачання 21-30 дні (днів) |
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2EDS8165HXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-side; MOSFET gate driver Technology: EiceDRIVER™ Case: PG-DSO-16 Output current: -2...1A Number of channels: 2 Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 3...3.5V; 4.5...20V Voltage class: 650V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLTS2242TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.9A Power dissipation: 2W Technology: HEXFET® Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 2279 шт: термін постачання 21-30 дні (днів) |
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FF300R12KT4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.6kW Topology: IGBT half-bridge |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
IRS21844STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 720ns Turn-off time: 290ns |
на замовлення 2437 шт: термін постачання 21-30 дні (днів) |
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BCX55H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89 Type of transistor: NPN Case: SOT89 Mounting: SMD Power dissipation: 2W Collector current: 1A Collector-emitter voltage: 60V Frequency: 100MHz Polarisation: bipolar |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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XC822MT1FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-16 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 1 Memory: 500B SRAM; 4kB FLASH Operating temperature: -40...85°C Integrated circuit features: LEDTSCU; MDU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 Kind of core: 8-bit |
на замовлення 372 шт: термін постачання 21-30 дні (днів) |
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IRFH5110TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLHS6276TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2 Case: PQFN2X2 Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET x2 Kind of package: reel Polarisation: unipolar Power dissipation: 4.5W Drain current: 12A Drain-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ITS4142N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223 Operating temperature: -30...85°C Kind of integrated circuit: high-side Technology: Industrial PROFET Kind of package: reel; tape Kind of output: N-Channel Mounting: SMD Turn-off time: 0.1ms Turn-on time: 150µs On-state resistance: 0.2Ω Power dissipation: 1.4W Output current: 0.7A Number of channels: 1 Supply voltage: 12...45V DC Case: SOT223 Type of integrated circuit: power switch |
на замовлення 3305 шт: термін постачання 21-30 дні (днів) |
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IRF250P224 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 68A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Kind of channel: enhancement Gate charge: 203nC Kind of package: tube Technology: StrongIRFET™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP60R190P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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IPA60R120P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar On-state resistance: 0.12Ω Drain current: 16A Gate-source voltage: ±20V Power dissipation: 28W Technology: CoolMOS™ P7 Drain-source voltage: 600V Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP023N10N5AKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX42E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 125V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz |
на замовлення 1268 шт: термін постачання 21-30 дні (днів) |
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BTS5012SDA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Case: TO252-5 On-state resistance: 12mΩ Mounting: SMD Number of channels: 1 Supply voltage: 5.5...20V DC Output current: 6A Technology: High Current PROFET Kind of integrated circuit: high-side Kind of output: N-Channel Type of integrated circuit: power switch |
на замовлення 1007 шт: термін постачання 21-30 дні (днів) |
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FD300R12KE3HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.47kW Topology: boost chopper Application: Inverter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPW60R190C6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 175 шт: термін постачання 21-30 дні (днів) |
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BSB013NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ Mounting: SMD Polarisation: unipolar On-state resistance: 1.3mΩ Gate-source voltage: ±20V Drain-source voltage: 25V Power dissipation: 57W Drain current: 103A Case: CanPAK™ MX; MG-WDSON-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
S25FL064LABMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 64Mb FLASH Operating frequency: 108MHz Application: automotive Case: SOIC8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL128LAGMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 128Mb FLASH Operating frequency: 133MHz Application: automotive Case: SOIC8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL128SAGMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 128Mb FLASH Operating frequency: 133MHz Application: automotive Case: SOIC16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL256SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 256Mb FLASH Operating frequency: 133MHz Application: automotive Case: SOIC16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL512SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FL512SDSMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 512Mb FLASH Operating frequency: 80MHz Application: automotive Case: SOIC16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FS512SAGMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 1.7...2V Memory: 512Mb FLASH Operating frequency: 133MHz Application: automotive Case: SOIC16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S25FS512SDSNFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 1.7...2V Memory: 512Mb FLASH Operating frequency: 80MHz Application: automotive Case: WSON8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S28HL512TFPBHB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24 Operating temperature: -40...105°C Interface: octal Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 512Mb FLASH Operating frequency: 166MHz Application: automotive Case: BGA24 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S28HS512TGABHB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Operating temperature: -40...105°C Interface: octal Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 1.7...2V Memory: 512Mb FLASH Operating frequency: 200MHz Application: automotive Case: BGA24 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S29GL128S10DHB013 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel Operating temperature: -40...105°C Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: parallel Kind of package: reel; tape Mounting: SMD Access time: 100ns Operating voltage: 2.7...3.6V Memory: 128Mb FLASH Application: automotive Case: BGA64 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
S70GL02GS11FHB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Operating temperature: -40...105°C Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: parallel Kind of package: reel; tape Mounting: SMD Access time: 110ns Operating voltage: 2.7...3.6V Memory: 2Gb FLASH Application: automotive Case: BGA64 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLD1120ELXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED driver Output current: 0.36A Case: PG-SSOP-14-EP Mounting: SMD Number of channels: 1 Integrated circuit features: linear dimming; PWM Operating voltage: 5.5...40V DC Protection: overheating OTP Technology: Litix™ |
на замовлення 2275 шт: термін постачання 21-30 дні (днів) |
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BTS723GW | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14 Technology: Classic PROFET Type of integrated circuit: power switch Kind of output: N-Channel Mounting: SMD Output current: 2.9...4.2A On-state resistance: 53mΩ Number of channels: 2 Supply voltage: 7...58V DC Kind of integrated circuit: high-side Case: SO14 |
на замовлення 219 шт: термін постачання 21-30 дні (днів) |
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IRS4427PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -3.3...2.3A Power: 1W Number of channels: 2 Supply voltage: 6...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Turn-on time: 50ns Turn-off time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FZ600R12KE3HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 600A Pulsed collector current: 1.2kA Power dissipation: 2.8kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FZ400R12KS4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Power dissipation: 2.5kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FF450R12KT4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.4kW Topology: IGBT half-bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FF450R12KE4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.4kW Topology: IGBT half-bridge |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FZ900R12KE4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Case: AG-62MMES Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 900A Pulsed collector current: 1.8kA Power dissipation: 4.3kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DF400R12KE3HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 400A Pulsed collector current: 800A Power dissipation: 2kW Topology: buck chopper |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FF200R12KE3HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.05kW Topology: IGBT half-bridge |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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TT260N22KOFHOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 260A Case: BG-PB50AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 8kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FF200R12KT3EHOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of semiconductor module: IGBT Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Power dissipation: 1.05kW Topology: IGBT x2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FF300R12KT3EHOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of semiconductor module: IGBT Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.45kW Topology: IGBT x2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FF200R12KE4PHOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Topology: IGBT half-bridge |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS724G | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3.3...7.3A Number of channels: 4 Mounting: SMD Case: SO20 On-state resistance: 22.5mΩ Technology: Classic PROFET Kind of output: N-Channel Supply voltage: 5.5...40V DC |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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BCR141E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ Mounting: SMD Base resistor: 22kΩ Base-emitter resistor: 22kΩ Kind of transistor: BRT Frequency: 130MHz Type of transistor: NPN Polarisation: bipolar Case: SOT23 Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V |
на замовлення 4139 шт: термін постачання 21-30 дні (днів) |
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IRLTS6342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.3A Power dissipation: 2W Technology: HEXFET® Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 2588 шт: термін постачання 21-30 дні (днів) |
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ITS4141NHUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Mounting: SMD Case: SOT223 On-state resistance: 0.2Ω Kind of package: reel; tape Technology: Industrial PROFET Kind of output: N-Channel Operating temperature: -30...85°C Supply voltage: 12...45V DC Turn-off time: 0.1ms Turn-on time: 150µs Power dissipation: 1.4W |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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BTS3405G | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET® Technology: HITFET® Type of integrated circuit: power switch Kind of output: N-Channel Mounting: SMD Output current: 0.35A On-state resistance: 0.35Ω Number of channels: 2 Output voltage: 10V Kind of integrated circuit: low-side Case: PG-DSO-8-25 |
на замовлення 2207 шт: термін постачання 21-30 дні (днів) |
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BAT1704E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 4V Load current: 0.13A Semiconductor structure: double series Power dissipation: 0.15W |
на замовлення 2679 шт: термін постачання 21-30 дні (днів) |
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BSZ105N04NSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8 Polarisation: unipolar Case: PG-TSDSON-8 Kind of channel: enhancement Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Mounting: SMD Drain current: 29A Drain-source voltage: 40V Gate charge: 13nC On-state resistance: 10.5mΩ Power dissipation: 35W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCR112E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Kind of transistor: BRT |
на замовлення 5208 шт: термін постачання 21-30 дні (днів) |
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BCR148E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ Mounting: SMD Base resistor: 47kΩ Base-emitter resistor: 47kΩ Kind of transistor: BRT Frequency: 100MHz Type of transistor: NPN Polarisation: bipolar Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V |
на замовлення 2215 шт: термін постачання 21-30 дні (днів) |
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IRFL024ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 5.1A Power dissipation: 2.8W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTS50085-1TMA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 38A Number of channels: 1 Mounting: SMD Case: PG-TO220-7-4 On-state resistance: 7.2mΩ Technology: High Current PROFET Kind of output: N-Channel Supply voltage: 5...58V DC |
на замовлення 605 шт: термін постачання 21-30 дні (днів) |
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BAS4007WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW Power dissipation: 0.25W Case: SOT343 Mounting: SMD Load current: 0.12A Max. forward impulse current: 0.2A Max. off-state voltage: 40V Semiconductor structure: double independent Type of diode: Schottky switching |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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1EDF5673FXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику
од. на суму грн.
IRFH7110TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
IRFTS9342TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Kind of package: reel
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2W
Case: TSOP6
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Kind of package: reel
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2W
Case: TSOP6
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
IRFTS8342TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
на замовлення 1930 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.28 грн |
20+ | 20.27 грн |
23+ | 17.89 грн |
98+ | 9.58 грн |
268+ | 9.03 грн |
2EDS8165HXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
товару немає в наявності
В кошику
од. на суму грн.
IRLTS2242TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2279 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.22 грн |
16+ | 26.36 грн |
50+ | 18.13 грн |
100+ | 15.36 грн |
114+ | 8.15 грн |
314+ | 7.76 грн |
FF300R12KT4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Topology: IGBT half-bridge
товару немає в наявності
В кошику
од. на суму грн.
IRS21844STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
на замовлення 2437 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 121.07 грн |
10+ | 98.17 грн |
27+ | 92.63 грн |
500+ | 91.84 грн |
1000+ | 89.46 грн |
BCX55H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Case: SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 60V
Frequency: 100MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Case: SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 60V
Frequency: 100MHz
Polarisation: bipolar
на замовлення 21 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.46 грн |
XC822MT1FRIAAFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
на замовлення 372 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 87.82 грн |
6+ | 77.59 грн |
17+ | 57.80 грн |
45+ | 54.63 грн |
IRFH5110TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
В кошику
од. на суму грн.
IRLHS6276TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
ITS4142N |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of package: reel; tape
Kind of output: N-Channel
Mounting: SMD
Turn-off time: 0.1ms
Turn-on time: 150µs
On-state resistance: 0.2Ω
Power dissipation: 1.4W
Output current: 0.7A
Number of channels: 1
Supply voltage: 12...45V DC
Case: SOT223
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of package: reel; tape
Kind of output: N-Channel
Mounting: SMD
Turn-off time: 0.1ms
Turn-on time: 150µs
On-state resistance: 0.2Ω
Power dissipation: 1.4W
Output current: 0.7A
Number of channels: 1
Supply voltage: 12...45V DC
Case: SOT223
Type of integrated circuit: power switch
на замовлення 3305 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 219.12 грн |
10+ | 133.01 грн |
12+ | 83.13 грн |
31+ | 78.38 грн |
1000+ | 77.59 грн |
2000+ | 75.21 грн |
IRF250P224 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
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IPP60R190P6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 41 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 157.73 грн |
8+ | 121.92 грн |
10+ | 117.17 грн |
21+ | 115.59 грн |
25+ | 114.01 грн |
IPA60R120P7 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: TO220FP
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IPP023N10N5AKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
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BCX42E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.90 грн |
31+ | 13.14 грн |
50+ | 10.13 грн |
100+ | 9.03 грн |
149+ | 6.25 грн |
411+ | 5.86 грн |
BTS5012SDA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Case: TO252-5
On-state resistance: 12mΩ
Mounting: SMD
Number of channels: 1
Supply voltage: 5.5...20V DC
Output current: 6A
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Case: TO252-5
On-state resistance: 12mΩ
Mounting: SMD
Number of channels: 1
Supply voltage: 5.5...20V DC
Output current: 6A
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
на замовлення 1007 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 167.11 грн |
7+ | 133.01 грн |
10+ | 120.34 грн |
FD300R12KE3HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.47kW
Topology: boost chopper
Application: Inverter
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.47kW
Topology: boost chopper
Application: Inverter
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IPW60R190C6FKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 175 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 242.14 грн |
3+ | 198.72 грн |
6+ | 171.80 грн |
15+ | 163.09 грн |
120+ | 159.93 грн |
BSB013NE2LXIXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 103A
Case: CanPAK™ MX; MG-WDSON-2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 103A
Case: CanPAK™ MX; MG-WDSON-2
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S25FL064LABMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Operating frequency: 108MHz
Application: automotive
Case: SOIC8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Operating frequency: 108MHz
Application: automotive
Case: SOIC8
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S25FL128LAGMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC8
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S25FL128SAGMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
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S25FL256SAGMFB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
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S25FL512SAGMFB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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S25FL512SDSMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: SOIC16
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: SOIC16
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S25FS512SAGMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
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S25FS512SDSNFB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: WSON8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: WSON8
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S28HL512TFPBHB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 166MHz
Application: automotive
Case: BGA24
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 166MHz
Application: automotive
Case: BGA24
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S28HS512TGABHB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 200MHz
Application: automotive
Case: BGA24
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 200MHz
Application: automotive
Case: BGA24
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S29GL128S10DHB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 100ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Application: automotive
Case: BGA64
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 100ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Application: automotive
Case: BGA64
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S70GL02GS11FHB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
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TLD1120ELXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
на замовлення 2275 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 60.54 грн |
9+ | 46.55 грн |
10+ | 41.88 грн |
25+ | 38.40 грн |
BTS723GW |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Technology: Classic PROFET
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 2.9...4.2A
On-state resistance: 53mΩ
Number of channels: 2
Supply voltage: 7...58V DC
Kind of integrated circuit: high-side
Case: SO14
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Technology: Classic PROFET
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 2.9...4.2A
On-state resistance: 53mΩ
Number of channels: 2
Supply voltage: 7...58V DC
Kind of integrated circuit: high-side
Case: SO14
на замовлення 219 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 456.15 грн |
4+ | 294.52 грн |
9+ | 277.89 грн |
100+ | 273.93 грн |
IRS4427PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
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FZ600R12KE3HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
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FZ400R12KS4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
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FF450R12KT4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
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FF450R12KE4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
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FZ900R12KE4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
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DF400R12KE3HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
Topology: buck chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
Topology: buck chopper
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FF200R12KE3HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT half-bridge
на замовлення 9 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 9421.41 грн |
TT260N22KOFHOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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FF200R12KT3EHOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT x2
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT x2
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FF300R12KT3EHOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Topology: IGBT x2
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Topology: IGBT x2
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FF200R12KE4PHOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Topology: IGBT half-bridge
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BTS724G |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Supply voltage: 5.5...40V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Supply voltage: 5.5...40V DC
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 465.53 грн |
4+ | 236.72 грн |
BCR141E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Mounting: SMD
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Kind of transistor: BRT
Frequency: 130MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Mounting: SMD
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Kind of transistor: BRT
Frequency: 130MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
на замовлення 4139 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.58 грн |
23+ | 17.42 грн |
38+ | 10.67 грн |
100+ | 9.03 грн |
250+ | 6.21 грн |
325+ | 2.87 грн |
500+ | 2.86 грн |
894+ | 2.71 грн |
IRLTS6342TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2588 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.32 грн |
28+ | 14.57 грн |
31+ | 12.90 грн |
50+ | 11.64 грн |
100+ | 10.61 грн |
118+ | 7.92 грн |
323+ | 7.52 грн |
ITS4141NHUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of output: N-Channel
Operating temperature: -30...85°C
Supply voltage: 12...45V DC
Turn-off time: 0.1ms
Turn-on time: 150µs
Power dissipation: 1.4W
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of output: N-Channel
Operating temperature: -30...85°C
Supply voltage: 12...45V DC
Turn-off time: 0.1ms
Turn-on time: 150µs
Power dissipation: 1.4W
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 117.66 грн |
10+ | 80.75 грн |
13+ | 74.42 грн |
25+ | 73.63 грн |
35+ | 70.46 грн |
50+ | 68.88 грн |
100+ | 67.30 грн |
BTS3405G |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Technology: HITFET®
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 0.35A
On-state resistance: 0.35Ω
Number of channels: 2
Output voltage: 10V
Kind of integrated circuit: low-side
Case: PG-DSO-8-25
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Technology: HITFET®
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 0.35A
On-state resistance: 0.35Ω
Number of channels: 2
Output voltage: 10V
Kind of integrated circuit: low-side
Case: PG-DSO-8-25
на замовлення 2207 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 173.93 грн |
10+ | 103.71 грн |
11+ | 85.51 грн |
30+ | 81.55 грн |
100+ | 78.38 грн |
BAT1704E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
на замовлення 2679 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 11.08 грн |
46+ | 8.71 грн |
50+ | 8.00 грн |
56+ | 7.13 грн |
100+ | 6.73 грн |
381+ | 6.41 грн |
BSZ105N04NSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Polarisation: unipolar
Case: PG-TSDSON-8
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 29A
Drain-source voltage: 40V
Gate charge: 13nC
On-state resistance: 10.5mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Polarisation: unipolar
Case: PG-TSDSON-8
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 29A
Drain-source voltage: 40V
Gate charge: 13nC
On-state resistance: 10.5mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
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BCR112E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
на замовлення 5208 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.23 грн |
59+ | 6.81 грн |
70+ | 5.70 грн |
80+ | 4.96 грн |
100+ | 4.31 грн |
250+ | 3.64 грн |
378+ | 2.46 грн |
1038+ | 2.33 грн |
BCR148E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Mounting: SMD
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 100MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Mounting: SMD
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 100MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
на замовлення 2215 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
74+ | 5.83 грн |
100+ | 4.88 грн |
249+ | 3.74 грн |
685+ | 3.53 грн |
IRFL024ZTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BTS50085-1TMA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Technology: High Current PROFET
Kind of output: N-Channel
Supply voltage: 5...58V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Technology: High Current PROFET
Kind of output: N-Channel
Supply voltage: 5...58V DC
на замовлення 605 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 499.63 грн |
3+ | 379.23 грн |
7+ | 358.65 грн |
100+ | 345.19 грн |
BAS4007WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Max. off-state voltage: 40V
Semiconductor structure: double independent
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Max. off-state voltage: 40V
Semiconductor structure: double independent
Type of diode: Schottky switching
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 24.73 грн |
23+ | 17.89 грн |
27+ | 15.20 грн |
100+ | 8.50 грн |
198+ | 4.73 грн |
543+ | 4.47 грн |
3000+ | 4.31 грн |