Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149543) > Сторінка 2461 з 2493

Обрати Сторінку:    << Попередня Сторінка ]  1 249 498 747 996 1245 1494 1743 1992 2241 2456 2457 2458 2459 2460 2461 2462 2463 2464 2465 2466 2490 2493  Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
1EDF5673FXUMA1 1EDF5673FXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
IRFH7110TRPBF IRFH7110TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB9C6F703D5EA&compId=IRFH7110TRPBF.pdf?ci_sign=c66b2d50f8a627ad6e7e7a642b848a73f86c80c4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
В кошику  од. на суму  грн.
IRFTS9342TRPBF IRFTS9342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C996E431F6F1A303005056AB0C4F&compId=irfts9342pbf.pdf?ci_sign=b172a9595ca6a4474e9b0d2efc95b751114ea742 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Kind of package: reel
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2W
Case: TSOP6
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IRFTS8342TRPBF IRFTS8342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C975B7ABC1F1A303005056AB0C4F&compId=irfts8342pbf.pdf?ci_sign=db0a5119cd5ea81bef66eb4bdb6eb86b3179e7bd Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
на замовлення 1930 шт:
термін постачання 21-30 дні (днів)
16+27.28 грн
20+20.27 грн
23+17.89 грн
98+9.58 грн
268+9.03 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
2EDS8165HXUMA1 2EDS8165HXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
товару немає в наявності
В кошику  од. на суму  грн.
IRLTS2242TRPBF IRLTS2242TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222822B4201F0F1A303005056AB0C4F&compId=irlts2242pbf.pdf?ci_sign=67037f13a19603e6ce309fb4330f48931a8be6de Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2279 шт:
термін постачання 21-30 дні (днів)
11+39.22 грн
16+26.36 грн
50+18.13 грн
100+15.36 грн
114+8.15 грн
314+7.76 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FF300R12KT4HOSA1 FF300R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD80D064564259&compId=FF300R12KT4.pdf?ci_sign=3b3b4ec7904ace87e4bb423a0f8f1a4cd884a9ab Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Topology: IGBT half-bridge
товару немає в наявності
В кошику  од. на суму  грн.
IRS21844STRPBF INFINEON TECHNOLOGIES irs2184.pdf?fileId=5546d462533600a401535676d8da27db Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
на замовлення 2437 шт:
термін постачання 21-30 дні (днів)
4+121.07 грн
10+98.17 грн
27+92.63 грн
500+91.84 грн
1000+89.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BCX55H6327XTSA1 BCX55H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C523F7A9BD2469&compId=BCX55.pdf?ci_sign=a3bb4ae1588b66242c2cb0348fbd0c37989e1df4 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Case: SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 60V
Frequency: 100MHz
Polarisation: bipolar
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
21+20.46 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
XC822MT1FRIAAFXUMA1 XC822MT1FRIAAFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6999469085E28&compId=XC82X-DTE.pdf?ci_sign=f0d60d0b9823b4826cf85a0833af492801959a8a Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
на замовлення 372 шт:
термін постачання 21-30 дні (днів)
5+87.82 грн
6+77.59 грн
17+57.80 грн
45+54.63 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFH5110TRPBF IRFH5110TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B5CDDD6CADF1A303005056AB0C4F&compId=irfh5110pbf.pdf?ci_sign=b0431d386322e9a787eacbded2ffc698b5b0504f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
В кошику  од. на суму  грн.
IRLHS6276TRPBF IRLHS6276TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22277C3379CC2F1A303005056AB0C4F&compId=irlhs6276pbf.pdf?ci_sign=208aca56a5000cd5159155d6e3fbbc58f9c0642b Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
товару немає в наявності
В кошику  од. на суму  грн.
ITS4142N ITS4142N INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6E1AB61DB55EA&compId=ITS4142N.pdf?ci_sign=21c702092ba3ee18972d7cdcbb85086b44fd23a3 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of package: reel; tape
Kind of output: N-Channel
Mounting: SMD
Turn-off time: 0.1ms
Turn-on time: 150µs
On-state resistance: 0.2Ω
Power dissipation: 1.4W
Output current: 0.7A
Number of channels: 1
Supply voltage: 12...45V DC
Case: SOT223
Type of integrated circuit: power switch
на замовлення 3305 шт:
термін постачання 21-30 дні (днів)
2+219.12 грн
10+133.01 грн
12+83.13 грн
31+78.38 грн
1000+77.59 грн
2000+75.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF250P224 IRF250P224 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5D7D7C8750A18&compId=IRF250P224.pdf?ci_sign=b596cfd627d254660d4e86550909ac67ff33c44d Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R190P6XKSA1 IPP60R190P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59496F43BA9B1BF&compId=IPP60R190P6-DTE.pdf?ci_sign=6ca2ab1861703fa95cc299fbb9cf787049410a12 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
3+157.73 грн
8+121.92 грн
10+117.17 грн
21+115.59 грн
25+114.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA60R120P7 IPA60R120P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E184A487B3A749&compId=IPA60R120P7.pdf?ci_sign=2a32c7f9e43909d9c30658870980b04c399f73e2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: TO220FP
товару немає в наявності
В кошику  од. на суму  грн.
IPP023N10N5AKSA1 IPP023N10N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAFB2551DBC11C&compId=IPP023N10N5-DTE.pdf?ci_sign=8e7b10dc9b3c7552849246161f420235e75e450c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
BCX42E6327 BCX42E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B4125EE4672469&compId=BCX42E6327.pdf?ci_sign=67fb8351dd49719a9bb2a0e2e784490f512ddf69 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)
24+17.90 грн
31+13.14 грн
50+10.13 грн
100+9.03 грн
149+6.25 грн
411+5.86 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BTS5012SDA BTS5012SDA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986584F5DB6469&compId=BTS5012SDA.pdf?ci_sign=4c533c0b61246aa343a29fc2c537766b23bce121 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Case: TO252-5
On-state resistance: 12mΩ
Mounting: SMD
Number of channels: 1
Supply voltage: 5.5...20V DC
Output current: 6A
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
на замовлення 1007 шт:
термін постачання 21-30 дні (днів)
3+167.11 грн
7+133.01 грн
10+120.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FD300R12KE3HOSA1 FD300R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFE1588717B3D7&compId=FD300R12KE3.pdf?ci_sign=4f9165ddb8c39d579e888c281879100e2a537fa6 Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.47kW
Topology: boost chopper
Application: Inverter
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R190C6FKSA1 IPW60R190C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DAE69A9FB1BF&compId=IPW60R190C6-DTE.pdf?ci_sign=aa3804d3e7bddb28ab47507aa621ef2f4dd6706c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 175 шт:
термін постачання 21-30 дні (днів)
2+242.14 грн
3+198.72 грн
6+171.80 грн
15+163.09 грн
120+159.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSB013NE2LXIXUMA1 BSB013NE2LXIXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C1FC2A5FA9011C&compId=BSB013NE2LXI-DTE.pdf?ci_sign=aba356e0bd6bc82ad911453ce9c6ebac3f41cad2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 103A
Case: CanPAK™ MX; MG-WDSON-2
товару немає в наявності
В кошику  од. на суму  грн.
S25FL064LABMFB013 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Operating frequency: 108MHz
Application: automotive
Case: SOIC8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128LAGMFB013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128SAGMFB013 INFINEON TECHNOLOGIES 001-98283%20Rev%20T.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
товару немає в наявності
В кошику  од. на суму  грн.
S25FL256SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SDSMFB013 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: SOIC16
товару немає в наявності
В кошику  од. на суму  грн.
S25FS512SAGMFB013 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
товару немає в наявності
В кошику  од. на суму  грн.
S25FS512SDSNFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: WSON8
товару немає в наявності
В кошику  од. на суму  грн.
S28HL512TFPBHB013 INFINEON TECHNOLOGIES S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 166MHz
Application: automotive
Case: BGA24
товару немає в наявності
В кошику  од. на суму  грн.
S28HS512TGABHB013 INFINEON TECHNOLOGIES S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 200MHz
Application: automotive
Case: BGA24
товару немає в наявності
В кошику  од. на суму  грн.
S29GL128S10DHB013 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 100ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Application: automotive
Case: BGA64
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS11FHB013 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
товару немає в наявності
В кошику  од. на суму  грн.
TLD1120ELXUMA1 TLD1120ELXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CD141BFF73C93D1&compId=TLD1120EL.pdf?ci_sign=96300b4bd44c785763f84797c1c0de64acd9edfd Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
на замовлення 2275 шт:
термін постачання 21-30 дні (днів)
8+60.54 грн
9+46.55 грн
10+41.88 грн
25+38.40 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTS723GW BTS723GW INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697CF8E11EA0469&compId=BTS723GW.pdf?ci_sign=8028509f6986f4e588434f8404d65e1c0adc8028 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Technology: Classic PROFET
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 2.9...4.2A
On-state resistance: 53mΩ
Number of channels: 2
Supply voltage: 7...58V DC
Kind of integrated circuit: high-side
Case: SO14
на замовлення 219 шт:
термін постачання 21-30 дні (днів)
1+456.15 грн
4+294.52 грн
9+277.89 грн
100+273.93 грн
В кошику  од. на суму  грн.
IRS4427PBF IRS4427PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA864536E4D93D7&compId=IRS4427PBF.pdf?ci_sign=18bc1ab6bdaf203e717df27cfa52960c5ee10db1 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
товару немає в наявності
В кошику  од. на суму  грн.
FZ600R12KE3HOSA1 FZ600R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B429DD0D2FC469&compId=FZ600R12KE3.pdf?ci_sign=868834a23490657b7f01821c752b76da3c7c6933 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
товару немає в наявності
В кошику  од. на суму  грн.
FZ400R12KS4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDABBD2E6ABB71060C7&compId=FZ400R12KS4.pdf?ci_sign=38ee09c54c6e231e906f63e53875a0cb78b3b52e Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
товару немає в наявності
В кошику  од. на суму  грн.
FF450R12KT4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
товару немає в наявності
В кошику  од. на суму  грн.
FF450R12KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF791B428A7DE27&compId=FF450R12KE4-DTE.pdf?ci_sign=ea990a008d4cd0a41ce5a30a9a09bff4050731f0 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
товару немає в наявності
В кошику  од. на суму  грн.
FZ900R12KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F18F860860D5&compId=FZ900R12KE4.pdf?ci_sign=23fa0b5b27e80ccd677c32a3a61818263e8ce358 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
товару немає в наявності
В кошику  од. на суму  грн.
DF400R12KE3HOSA1 DF400R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDF8B8F122253D7&compId=DF400R12KE3.pdf?ci_sign=c0ee8fc01e207ac3de7635995e03cffedee02f43 Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
Topology: buck chopper
товару немає в наявності
В кошику  од. на суму  грн.
FF200R12KE3HOSA1 FF200R12KE3HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FD6BFDD0F906745&compId=FF200R12KE3.pdf?ci_sign=f153117c762ff8f8b62ebc993737473163b2a468 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT half-bridge
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+9421.41 грн
В кошику  од. на суму  грн.
TT260N22KOFHOSA1 TT260N22KOFHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE7AC9E2082469&compId=TT260N22KOF.pdf?ci_sign=28d540274c7a6cf55effab82fa3567854f9dd7f9 Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A398A572F53D7&compId=FF200R12KT3E.pdf?ci_sign=7d379c22644bc6b2701cdde2fb53b0018b9a5173 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT x2
товару немає в наявності
В кошику  од. на суму  грн.
FF300R12KT3EHOSA1 FF300R12KT3EHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A6B34C2C213D7&compId=FF300R12KT3E.pdf?ci_sign=fd144bb2674acaa882bf1dd9f81d465f7011f7f3 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Topology: IGBT x2
товару немає в наявності
В кошику  од. на суму  грн.
FF200R12KE4PHOSA1 FF200R12KE4PHOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A348FD319B3D7&compId=FF200R12KE4P.pdf?ci_sign=c3b8d527485471d02faae9add4b3248119e8cbfe Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Topology: IGBT half-bridge
товару немає в наявності
В кошику  од. на суму  грн.
BTS724G BTS724G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBC9E5A998E90469&compId=BTS724G.pdf?ci_sign=fdbdc60cc29109e80227e1510eebe17cccc6aecd Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Supply voltage: 5.5...40V DC
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+465.53 грн
4+236.72 грн
В кошику  од. на суму  грн.
BCR141E6327 BCR141E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C592F4B4A0A469&compId=BCR141.pdf?ci_sign=6735c9f133de00805775cd3a1803dbbcf5242143 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Mounting: SMD
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Kind of transistor: BRT
Frequency: 130MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
на замовлення 4139 шт:
термін постачання 21-30 дні (днів)
17+25.58 грн
23+17.42 грн
38+10.67 грн
100+9.03 грн
250+6.21 грн
325+2.87 грн
500+2.86 грн
894+2.71 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IRLTS6342TRPBF IRLTS6342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22282476BD4DAF1A303005056AB0C4F&compId=irlts6342pbf.pdf?ci_sign=e247a54c761d43482cdc3c03bb2b306196ea7d84 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2588 шт:
термін постачання 21-30 дні (днів)
20+21.32 грн
28+14.57 грн
31+12.90 грн
50+11.64 грн
100+10.61 грн
118+7.92 грн
323+7.52 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
ITS4141NHUMA1 ITS4141NHUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6DF8054C3B5EA&compId=ITS4141N.pdf?ci_sign=e124ff2bc030b4d051faaf0434cbcb829927b7f4 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of output: N-Channel
Operating temperature: -30...85°C
Supply voltage: 12...45V DC
Turn-off time: 0.1ms
Turn-on time: 150µs
Power dissipation: 1.4W
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)
4+117.66 грн
10+80.75 грн
13+74.42 грн
25+73.63 грн
35+70.46 грн
50+68.88 грн
100+67.30 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTS3405G BTS3405G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E076C4E98469&compId=BTS3405G.pdf?ci_sign=8f9574202640d62b6b0b3043218a9c425ff98c55 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Technology: HITFET®
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 0.35A
On-state resistance: 0.35Ω
Number of channels: 2
Output voltage: 10V
Kind of integrated circuit: low-side
Case: PG-DSO-8-25
на замовлення 2207 шт:
термін постачання 21-30 дні (днів)
3+173.93 грн
10+103.71 грн
11+85.51 грн
30+81.55 грн
100+78.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BAT1704E6327HTSA1 BAT1704E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
на замовлення 2679 шт:
термін постачання 21-30 дні (днів)
39+11.08 грн
46+8.71 грн
50+8.00 грн
56+7.13 грн
100+6.73 грн
381+6.41 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BSZ105N04NSGATMA1 BSZ105N04NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D887E788EC143&compId=BSZ105N04NSG.pdf?ci_sign=f7af05d5643b125769d0c3f54426bbc9fc8e81a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Polarisation: unipolar
Case: PG-TSDSON-8
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 29A
Drain-source voltage: 40V
Gate charge: 13nC
On-state resistance: 10.5mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
BCR112E6327HTSA1
+1
BCR112E6327HTSA1 INFINEON TECHNOLOGIES bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
на замовлення 5208 шт:
термін постачання 21-30 дні (днів)
42+10.23 грн
59+6.81 грн
70+5.70 грн
80+4.96 грн
100+4.31 грн
250+3.64 грн
378+2.46 грн
1038+2.33 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BCR148E6327 BCR148E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58B4B5D02A469&compId=BCR148.pdf?ci_sign=e97eb104b0c53699eb1c27d2f3eeba910076f276 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Mounting: SMD
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 100MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
на замовлення 2215 шт:
термін постачання 21-30 дні (днів)
74+5.83 грн
100+4.88 грн
249+3.74 грн
685+3.53 грн
Мінімальне замовлення: 74
В кошику  од. на суму  грн.
IRFL024ZTRPBF IRFL024ZTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE3F07F0275EA&compId=IRFL024ZTRPBF.pdf?ci_sign=8c23d246f7a2ed4b15ce6df643c8a84d048dd9c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BTS50085-1TMA BTS50085-1TMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586988A710BC62469&compId=BTS50085-1TMA.pdf?ci_sign=75945b08cb5cb70d233c56683d743ba7b1f0d4d8 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Technology: High Current PROFET
Kind of output: N-Channel
Supply voltage: 5...58V DC
на замовлення 605 шт:
термін постачання 21-30 дні (днів)
1+499.63 грн
3+379.23 грн
7+358.65 грн
100+345.19 грн
В кошику  од. на суму  грн.
BAS4007WH6327XTSA1 BAS4007WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Max. off-state voltage: 40V
Semiconductor structure: double independent
Type of diode: Schottky switching
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
18+24.73 грн
23+17.89 грн
27+15.20 грн
100+8.50 грн
198+4.73 грн
543+4.47 грн
3000+4.31 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
1EDF5673FXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD35D15A916F8BF&compId=1EDF5673F_1EDF5663H.pdf?ci_sign=78bf5f71fdff35205d0ff7cff4e413d561b7228b
1EDF5673FXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
товару немає в наявності
В кошику  од. на суму  грн.
IRFH7110TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCB9C6F703D5EA&compId=IRFH7110TRPBF.pdf?ci_sign=c66b2d50f8a627ad6e7e7a642b848a73f86c80c4
IRFH7110TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
В кошику  од. на суму  грн.
IRFTS9342TRPBF pVersion=0046&contRep=ZT&docId=E221C996E431F6F1A303005056AB0C4F&compId=irfts9342pbf.pdf?ci_sign=b172a9595ca6a4474e9b0d2efc95b751114ea742
IRFTS9342TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Kind of package: reel
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2W
Case: TSOP6
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
IRFTS8342TRPBF pVersion=0046&contRep=ZT&docId=E221C975B7ABC1F1A303005056AB0C4F&compId=irfts8342pbf.pdf?ci_sign=db0a5119cd5ea81bef66eb4bdb6eb86b3179e7bd
IRFTS8342TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
на замовлення 1930 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.28 грн
20+20.27 грн
23+17.89 грн
98+9.58 грн
268+9.03 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
2EDS8165HXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD778C66A1EF8BF&compId=2EDF7xx5F_K_H.pdf?ci_sign=536288a0a3fc9780e6ac8a2f60f1f7e7d612e974
2EDS8165HXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
товару немає в наявності
В кошику  од. на суму  грн.
IRLTS2242TRPBF pVersion=0046&contRep=ZT&docId=E222822B4201F0F1A303005056AB0C4F&compId=irlts2242pbf.pdf?ci_sign=67037f13a19603e6ce309fb4330f48931a8be6de
IRLTS2242TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2279 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.22 грн
16+26.36 грн
50+18.13 грн
100+15.36 грн
114+8.15 грн
314+7.76 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FF300R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFD80D064564259&compId=FF300R12KT4.pdf?ci_sign=3b3b4ec7904ace87e4bb423a0f8f1a4cd884a9ab
FF300R12KT4HOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Topology: IGBT half-bridge
товару немає в наявності
В кошику  од. на суму  грн.
IRS21844STRPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
на замовлення 2437 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+121.07 грн
10+98.17 грн
27+92.63 грн
500+91.84 грн
1000+89.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BCX55H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C523F7A9BD2469&compId=BCX55.pdf?ci_sign=a3bb4ae1588b66242c2cb0348fbd0c37989e1df4
BCX55H6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Case: SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 60V
Frequency: 100MHz
Polarisation: bipolar
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.46 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
XC822MT1FRIAAFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6999469085E28&compId=XC82X-DTE.pdf?ci_sign=f0d60d0b9823b4826cf85a0833af492801959a8a
XC822MT1FRIAAFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
на замовлення 372 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+87.82 грн
6+77.59 грн
17+57.80 грн
45+54.63 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRFH5110TRPBF pVersion=0046&contRep=ZT&docId=E221B5CDDD6CADF1A303005056AB0C4F&compId=irfh5110pbf.pdf?ci_sign=b0431d386322e9a787eacbded2ffc698b5b0504f
IRFH5110TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
В кошику  од. на суму  грн.
IRLHS6276TRPBF pVersion=0046&contRep=ZT&docId=E22277C3379CC2F1A303005056AB0C4F&compId=irlhs6276pbf.pdf?ci_sign=208aca56a5000cd5159155d6e3fbbc58f9c0642b
IRLHS6276TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
товару немає в наявності
В кошику  од. на суму  грн.
ITS4142N pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6E1AB61DB55EA&compId=ITS4142N.pdf?ci_sign=21c702092ba3ee18972d7cdcbb85086b44fd23a3
ITS4142N
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of package: reel; tape
Kind of output: N-Channel
Mounting: SMD
Turn-off time: 0.1ms
Turn-on time: 150µs
On-state resistance: 0.2Ω
Power dissipation: 1.4W
Output current: 0.7A
Number of channels: 1
Supply voltage: 12...45V DC
Case: SOT223
Type of integrated circuit: power switch
на замовлення 3305 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+219.12 грн
10+133.01 грн
12+83.13 грн
31+78.38 грн
1000+77.59 грн
2000+75.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF250P224 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5D7D7C8750A18&compId=IRF250P224.pdf?ci_sign=b596cfd627d254660d4e86550909ac67ff33c44d
IRF250P224
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
товару немає в наявності
В кошику  од. на суму  грн.
IPP60R190P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59496F43BA9B1BF&compId=IPP60R190P6-DTE.pdf?ci_sign=6ca2ab1861703fa95cc299fbb9cf787049410a12
IPP60R190P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+157.73 грн
8+121.92 грн
10+117.17 грн
21+115.59 грн
25+114.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA60R120P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E184A487B3A749&compId=IPA60R120P7.pdf?ci_sign=2a32c7f9e43909d9c30658870980b04c399f73e2
IPA60R120P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: TO220FP
товару немає в наявності
В кошику  од. на суму  грн.
IPP023N10N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAFB2551DBC11C&compId=IPP023N10N5-DTE.pdf?ci_sign=8e7b10dc9b3c7552849246161f420235e75e450c
IPP023N10N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
товару немає в наявності
В кошику  од. на суму  грн.
BCX42E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B4125EE4672469&compId=BCX42E6327.pdf?ci_sign=67fb8351dd49719a9bb2a0e2e784490f512ddf69
BCX42E6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
24+17.90 грн
31+13.14 грн
50+10.13 грн
100+9.03 грн
149+6.25 грн
411+5.86 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
BTS5012SDA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586986584F5DB6469&compId=BTS5012SDA.pdf?ci_sign=4c533c0b61246aa343a29fc2c537766b23bce121
BTS5012SDA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Case: TO252-5
On-state resistance: 12mΩ
Mounting: SMD
Number of channels: 1
Supply voltage: 5.5...20V DC
Output current: 6A
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
на замовлення 1007 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+167.11 грн
7+133.01 грн
10+120.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FD300R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDFE1588717B3D7&compId=FD300R12KE3.pdf?ci_sign=4f9165ddb8c39d579e888c281879100e2a537fa6
FD300R12KE3HOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.47kW
Topology: boost chopper
Application: Inverter
товару немає в наявності
В кошику  од. на суму  грн.
IPW60R190C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594DAE69A9FB1BF&compId=IPW60R190C6-DTE.pdf?ci_sign=aa3804d3e7bddb28ab47507aa621ef2f4dd6706c
IPW60R190C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 175 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+242.14 грн
3+198.72 грн
6+171.80 грн
15+163.09 грн
120+159.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSB013NE2LXIXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C1FC2A5FA9011C&compId=BSB013NE2LXI-DTE.pdf?ci_sign=aba356e0bd6bc82ad911453ce9c6ebac3f41cad2
BSB013NE2LXIXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 103A
Case: CanPAK™ MX; MG-WDSON-2
товару немає в наявності
В кошику  од. на суму  грн.
S25FL064LABMFB013 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Operating frequency: 108MHz
Application: automotive
Case: SOIC8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128LAGMFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC8
товару немає в наявності
В кошику  од. на суму  грн.
S25FL128SAGMFB013 001-98283%20Rev%20T.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
товару немає в наявності
В кошику  од. на суму  грн.
S25FL256SAGMFB013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SAGMFB013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SDSMFB013 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: SOIC16
товару немає в наявності
В кошику  од. на суму  грн.
S25FS512SAGMFB013 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
товару немає в наявності
В кошику  од. на суму  грн.
S25FS512SDSNFB013
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: WSON8
товару немає в наявності
В кошику  од. на суму  грн.
S28HL512TFPBHB013 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 166MHz
Application: automotive
Case: BGA24
товару немає в наявності
В кошику  од. на суму  грн.
S28HS512TGABHB013 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 200MHz
Application: automotive
Case: BGA24
товару немає в наявності
В кошику  од. на суму  грн.
S29GL128S10DHB013
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 100ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Application: automotive
Case: BGA64
товару немає в наявності
В кошику  од. на суму  грн.
S70GL02GS11FHB013 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
товару немає в наявності
В кошику  од. на суму  грн.
TLD1120ELXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CD141BFF73C93D1&compId=TLD1120EL.pdf?ci_sign=96300b4bd44c785763f84797c1c0de64acd9edfd
TLD1120ELXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
на замовлення 2275 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+60.54 грн
9+46.55 грн
10+41.88 грн
25+38.40 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BTS723GW pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697CF8E11EA0469&compId=BTS723GW.pdf?ci_sign=8028509f6986f4e588434f8404d65e1c0adc8028
BTS723GW
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Technology: Classic PROFET
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 2.9...4.2A
On-state resistance: 53mΩ
Number of channels: 2
Supply voltage: 7...58V DC
Kind of integrated circuit: high-side
Case: SO14
на замовлення 219 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+456.15 грн
4+294.52 грн
9+277.89 грн
100+273.93 грн
В кошику  од. на суму  грн.
IRS4427PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE89DA864536E4D93D7&compId=IRS4427PBF.pdf?ci_sign=18bc1ab6bdaf203e717df27cfa52960c5ee10db1
IRS4427PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
товару немає в наявності
В кошику  од. на суму  грн.
FZ600R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B429DD0D2FC469&compId=FZ600R12KE3.pdf?ci_sign=868834a23490657b7f01821c752b76da3c7c6933
FZ600R12KE3HOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 600A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Power dissipation: 2.8kW
товару немає в наявності
В кошику  од. на суму  грн.
FZ400R12KS4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABBD2E6ABB71060C7&compId=FZ400R12KS4.pdf?ci_sign=38ee09c54c6e231e906f63e53875a0cb78b3b52e
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2.5kW
товару немає в наявності
В кошику  од. на суму  грн.
FF450R12KT4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869893D7BCFB4469&compId=FF450R12KT4.pdf?ci_sign=ae61a33310ba1063c05140bf85a5eae3ea9365d5
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
товару немає в наявності
В кошику  од. на суму  грн.
FF450R12KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ABF791B428A7DE27&compId=FF450R12KE4-DTE.pdf?ci_sign=ea990a008d4cd0a41ce5a30a9a09bff4050731f0
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.4kW
Topology: IGBT half-bridge
товару немає в наявності
В кошику  од. на суму  грн.
FZ900R12KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F18F860860D5&compId=FZ900R12KE4.pdf?ci_sign=23fa0b5b27e80ccd677c32a3a61818263e8ce358
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 900A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Case: AG-62MMES
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 900A
Pulsed collector current: 1.8kA
Power dissipation: 4.3kW
товару немає в наявності
В кошику  од. на суму  грн.
DF400R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89CDF8B8F122253D7&compId=DF400R12KE3.pdf?ci_sign=c0ee8fc01e207ac3de7635995e03cffedee02f43
DF400R12KE3HOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Power dissipation: 2kW
Topology: buck chopper
товару немає в наявності
В кошику  од. на суму  грн.
FF200R12KE3HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FD6BFDD0F906745&compId=FF200R12KE3.pdf?ci_sign=f153117c762ff8f8b62ebc993737473163b2a468
FF200R12KE3HOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT half-bridge
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+9421.41 грн
В кошику  од. на суму  грн.
TT260N22KOFHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE7AC9E2082469&compId=TT260N22KOF.pdf?ci_sign=28d540274c7a6cf55effab82fa3567854f9dd7f9
TT260N22KOFHOSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
FF200R12KT3EHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A398A572F53D7&compId=FF200R12KT3E.pdf?ci_sign=7d379c22644bc6b2701cdde2fb53b0018b9a5173
FF200R12KT3EHOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
Topology: IGBT x2
товару немає в наявності
В кошику  од. на суму  грн.
FF300R12KT3EHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A6B34C2C213D7&compId=FF300R12KT3E.pdf?ci_sign=fd144bb2674acaa882bf1dd9f81d465f7011f7f3
FF300R12KT3EHOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of semiconductor module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Topology: IGBT x2
товару немає в наявності
В кошику  од. на суму  грн.
FF200R12KE4PHOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A348FD319B3D7&compId=FF200R12KE4P.pdf?ci_sign=c3b8d527485471d02faae9add4b3248119e8cbfe
FF200R12KE4PHOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Topology: IGBT half-bridge
товару немає в наявності
В кошику  од. на суму  грн.
BTS724G pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBC9E5A998E90469&compId=BTS724G.pdf?ci_sign=fdbdc60cc29109e80227e1510eebe17cccc6aecd
BTS724G
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Technology: Classic PROFET
Kind of output: N-Channel
Supply voltage: 5.5...40V DC
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+465.53 грн
4+236.72 грн
В кошику  од. на суму  грн.
BCR141E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C592F4B4A0A469&compId=BCR141.pdf?ci_sign=6735c9f133de00805775cd3a1803dbbcf5242143
BCR141E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Mounting: SMD
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Kind of transistor: BRT
Frequency: 130MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
на замовлення 4139 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.58 грн
23+17.42 грн
38+10.67 грн
100+9.03 грн
250+6.21 грн
325+2.87 грн
500+2.86 грн
894+2.71 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IRLTS6342TRPBF pVersion=0046&contRep=ZT&docId=E22282476BD4DAF1A303005056AB0C4F&compId=irlts6342pbf.pdf?ci_sign=e247a54c761d43482cdc3c03bb2b306196ea7d84
IRLTS6342TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2588 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.32 грн
28+14.57 грн
31+12.90 грн
50+11.64 грн
100+10.61 грн
118+7.92 грн
323+7.52 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
ITS4141NHUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6DF8054C3B5EA&compId=ITS4141N.pdf?ci_sign=e124ff2bc030b4d051faaf0434cbcb829927b7f4
ITS4141NHUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Technology: Industrial PROFET
Kind of output: N-Channel
Operating temperature: -30...85°C
Supply voltage: 12...45V DC
Turn-off time: 0.1ms
Turn-on time: 150µs
Power dissipation: 1.4W
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+117.66 грн
10+80.75 грн
13+74.42 грн
25+73.63 грн
35+70.46 грн
50+68.88 грн
100+67.30 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BTS3405G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697E076C4E98469&compId=BTS3405G.pdf?ci_sign=8f9574202640d62b6b0b3043218a9c425ff98c55
BTS3405G
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 350mA; Ch: 2; N-Channel; SMD; HITFET®
Technology: HITFET®
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 0.35A
On-state resistance: 0.35Ω
Number of channels: 2
Output voltage: 10V
Kind of integrated circuit: low-side
Case: PG-DSO-8-25
на замовлення 2207 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+173.93 грн
10+103.71 грн
11+85.51 грн
30+81.55 грн
100+78.38 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BAT1704E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFF73F55472469&compId=BAT1704E6327HTSA1.pdf?ci_sign=ec65d261eef5013a28cd9465ec3a7878d859e4c0
BAT1704E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Power dissipation: 0.15W
на замовлення 2679 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.08 грн
46+8.71 грн
50+8.00 грн
56+7.13 грн
100+6.73 грн
381+6.41 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BSZ105N04NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8D887E788EC143&compId=BSZ105N04NSG.pdf?ci_sign=f7af05d5643b125769d0c3f54426bbc9fc8e81a5
BSZ105N04NSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Polarisation: unipolar
Case: PG-TSDSON-8
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 29A
Drain-source voltage: 40V
Gate charge: 13nC
On-state resistance: 10.5mΩ
Power dissipation: 35W
Gate-source voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
BCR112E6327HTSA1 bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Kind of transistor: BRT
на замовлення 5208 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.23 грн
59+6.81 грн
70+5.70 грн
80+4.96 грн
100+4.31 грн
250+3.64 грн
378+2.46 грн
1038+2.33 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BCR148E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C58B4B5D02A469&compId=BCR148.pdf?ci_sign=e97eb104b0c53699eb1c27d2f3eeba910076f276
BCR148E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Mounting: SMD
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 100MHz
Type of transistor: NPN
Polarisation: bipolar
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
на замовлення 2215 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
74+5.83 грн
100+4.88 грн
249+3.74 грн
685+3.53 грн
Мінімальне замовлення: 74
В кошику  од. на суму  грн.
IRFL024ZTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCE3F07F0275EA&compId=IRFL024ZTRPBF.pdf?ci_sign=8c23d246f7a2ed4b15ce6df643c8a84d048dd9c2
IRFL024ZTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
BTS50085-1TMA pVersion=0046&contRep=ZT&docId=005056AB752F1EE586988A710BC62469&compId=BTS50085-1TMA.pdf?ci_sign=75945b08cb5cb70d233c56683d743ba7b1f0d4d8
BTS50085-1TMA
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Technology: High Current PROFET
Kind of output: N-Channel
Supply voltage: 5...58V DC
на замовлення 605 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+499.63 грн
3+379.23 грн
7+358.65 грн
100+345.19 грн
В кошику  од. на суму  грн.
BAS4007WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFA3CF24748469&compId=BAS4004E6327HTSA1.pdf?ci_sign=d782cfe89d20da9b5e3c43b192c42b1b8d2f6a05
BAS4007WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Power dissipation: 0.25W
Case: SOT343
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Max. off-state voltage: 40V
Semiconductor structure: double independent
Type of diode: Schottky switching
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.73 грн
23+17.89 грн
27+15.20 грн
100+8.50 грн
198+4.73 грн
543+4.47 грн
3000+4.31 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
Обрати Сторінку:    << Попередня Сторінка ]  1 249 498 747 996 1245 1494 1743 1992 2241 2456 2457 2458 2459 2460 2461 2462 2463 2464 2465 2466 2490 2493  Наступна Сторінка >> ]