Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149543) > Сторінка 2460 з 2493
Фото | Назва | Виробник | Інформація |
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S29GL01GT11DHV023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...105°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29GL01GT11FHIV10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Output voltage: 1.65...3.6V DC Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29GL01GT11FHIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Output voltage: 1.65...3.6V DC Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29GL01GT11FHIV23 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Output voltage: 1.65...3.6V DC Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29GL01GT11TFB020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel Case: TSOP56 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...105°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Application: automotive Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29GL01GT11TFIV10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel Case: TSOP56 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29GL01GT11TFIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel Case: TSOP56 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S70GL02GT11FHB013 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Operating temperature: -40...105°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 2Gb FLASH Application: automotive Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S70GL02GT11FHI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: in-tray Kind of interface: parallel Operating temperature: -40...85°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 2Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FM25L16B-DG | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Memory: 16kb FRAM Memory organisation: 2kx8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FM25L16B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Memory: 16kb FRAM Memory organisation: 2kx8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of package: reel; tape Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CY7C1312KV18-250BZXCT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Mounting: SMD Case: FBGA165 Operating temperature: 0...70°C Kind of package: reel; tape Frequency: 250MHz Kind of interface: parallel Kind of memory: SRAM Supply voltage: 1.7...1.9V DC Memory: 18Mb SRAM Memory organisation: 1Mx18bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FM25CL64B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.65V DC Memory: 64kb FRAM Memory organisation: 8kx8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of package: reel; tape Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FM25L04B-DGTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Memory: 4kb FRAM Memory organisation: 512x8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of package: reel; tape Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FM25V05-GTR | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 512kb FRAM Memory organisation: 64kx8bit Clock frequency: 40MHz Case: SOIC8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of package: reel; tape Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FM25V10-DG | INFINEON TECHNOLOGIES |
![]() Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 1Mb FRAM Memory organisation: 128kx8bit Clock frequency: 40MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: SPI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25FL128LAGNFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Application: automotive Operating temperature: -40...105°C Operating frequency: 133MHz Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLV4906KFTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C Type of sensor: Hall Case: SC59 Range of detectable magnetic field: 4.7...13.9mT Supply voltage: 2.7...18V DC Operating temperature: -40...85°C Output configuration: analogue voltage Operation mode: unipolar |
на замовлення 1603 шт: термін постачання 21-30 дні (днів) |
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IRFSL7440PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 147A Pulsed drain current: 772A Power dissipation: 208W Case: TO262 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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CY62168EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 2.2...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CY62168EV30LL-45BVXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 2.2...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BFQ19SH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 0.12A Power dissipation: 1W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 5.5GHz |
на замовлення 641 шт: термін постачання 21-30 дні (днів) |
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IPP17N25S3100AKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A Kind of channel: enhancement Mounting: THT Case: PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ T Polarisation: unipolar On-state resistance: 0.1Ω Drain current: 13.3A Gate-source voltage: ±20V Pulsed drain current: 68A Power dissipation: 107W Drain-source voltage: 250V |
на замовлення 482 шт: термін постачання 21-30 дні (днів) |
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TLE4946KHTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT Mounting: SMT Kind of sensor: latch Operating temperature: -40...150°C Supply voltage: 2.7...18V DC Range of detectable magnetic field: -19...19mT Case: SC59 Type of sensor: Hall |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPU95R750P7AKMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD Case: IPAK Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 5.5A Gate charge: 23nC On-state resistance: 0.75Ω Gate-source voltage: ±20V Power dissipation: 73W Technology: CoolMOS™ P7 |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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TT210N12KOF | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of semiconductor module: thyristor Gate current: 150mA Max. forward voltage: 1.65V Load current: 210A Max. off-state voltage: 1.2kV Max. forward impulse current: 6.6kA Case: BG-PB50-1 |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IRF6218STRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -27A Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLP3034PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 327A Power dissipation: 341W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® Gate charge: 108nC |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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IRFP7430PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 404A Power dissipation: 366W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Trade name: StrongIRFET |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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S29AL008J55BFIR10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J55BFIR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J55BFIR22 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J55TFIR10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J55TFIR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J55TFNR10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...125°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J55TFNR20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...125°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BAN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFI022 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFM023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Application: automotive Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFN010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70TFI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70TFI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70TFN010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70TFN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SPD30P06PGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -30A Power dissipation: 125W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ |
на замовлення 1075 шт: термін постачання 21-30 дні (днів) |
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BAS7007E6327 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW Case: SOT143 Mounting: SMD Type of diode: Schottky switching Load current: 70mA Max. forward impulse current: 0.1A Power dissipation: 0.25W Max. off-state voltage: 70V Semiconductor structure: double independent |
на замовлення 2470 шт: термін постачання 21-30 дні (днів) |
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IRLR3410TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 79W Case: DPAK Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±16V On-state resistance: 0.105Ω Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FF300R12KS4 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: AG-62MM-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Power dissipation: 1.95kW Mechanical mounting: screw |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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BSC120N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8 Mounting: SMD On-state resistance: 12mΩ Drain current: 33A Gate-source voltage: ±20V Power dissipation: 28W Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Case: PG-TDSON-8 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC120N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8 Mounting: SMD On-state resistance: 12mΩ Drain current: 36A Gate-source voltage: ±20V Power dissipation: 28W Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Case: PG-TDSON-8 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
CY7C1520KV18-333BZXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...1.9V DC Frequency: 333MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRS21531DSTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Case: SO8 Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Operating temperature: -40...125°C Output current: -260...180mA Turn-off time: 50ns Turn-on time: 0.12µs Power: 625mW Number of channels: 2 Supply voltage: 10.1...16.8V DC Voltage class: 600V Kind of package: reel; tape |
на замовлення 1923 шт: термін постачання 21-30 дні (днів) |
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BCR400WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller Case: SOT343 Mounting: SMD Power: 0.33W Supply voltage: 1.6...18V DC Integrated circuit features: active bias controller Type of integrated circuit: driver Kind of package: reel; tape |
на замовлення 2877 шт: термін постачання 21-30 дні (днів) |
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BSS606NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Power dissipation: 1W Case: PG-SOT89 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 710 шт: термін постачання 21-30 дні (днів) |
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IRLS3036TRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 380W Case: D2PAK-7 Mounting: SMD Kind of channel: enhancement On-state resistance: 1.9mΩ Gate-source voltage: ±16V Pulsed drain current: 1kA |
на замовлення 373 шт: термін постачання 21-30 дні (днів) |
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S29GL01GT11DHV023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
товару немає в наявності
В кошику
од. на суму грн.
S29GL01GT11FHIV10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
товару немає в наявності
В кошику
од. на суму грн.
S29GL01GT11FHIV20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
товару немає в наявності
В кошику
од. на суму грн.
S29GL01GT11FHIV23 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
товару немає в наявності
В кошику
од. на суму грн.
S29GL01GT11TFB020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
товару немає в наявності
В кошику
од. на суму грн.
S29GL01GT11TFIV10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
товару немає в наявності
В кошику
од. на суму грн.
S29GL01GT11TFIV20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
товару немає в наявності
В кошику
од. на суму грн.
S70GL02GT11FHB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
товару немає в наявності
В кошику
од. на суму грн.
S70GL02GT11FHI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
товару немає в наявності
В кошику
од. на суму грн.
FM25L16B-DG |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
товару немає в наявності
В кошику
од. на суму грн.
FM25L16B-DGTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
товару немає в наявності
В кошику
од. на суму грн.
CY7C1312KV18-250BZXCT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
товару немає в наявності
В кошику
од. на суму грн.
FM25CL64B-DGTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
товару немає в наявності
В кошику
од. на суму грн.
FM25L04B-DGTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
товару немає в наявності
В кошику
од. на суму грн.
FM25V05-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 512kb FRAM
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 512kb FRAM
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
товару немає в наявності
В кошику
од. на суму грн.
FM25V10-DG |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
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S25FL128LAGNFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
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TLV4906KFTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
на замовлення 1603 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.58 грн |
25+ | 19.16 грн |
45+ | 19.08 грн |
IRFSL7440PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 147A
Pulsed drain current: 772A
Power dissipation: 208W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 147A
Pulsed drain current: 772A
Power dissipation: 208W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 426.31 грн |
CY62168EV30LL-45BVXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62168EV30LL-45BVXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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BFQ19SH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
на замовлення 641 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.52 грн |
18+ | 23.04 грн |
25+ | 20.90 грн |
100+ | 19.87 грн |
IPP17N25S3100AKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
On-state resistance: 0.1Ω
Drain current: 13.3A
Gate-source voltage: ±20V
Pulsed drain current: 68A
Power dissipation: 107W
Drain-source voltage: 250V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
On-state resistance: 0.1Ω
Drain current: 13.3A
Gate-source voltage: ±20V
Pulsed drain current: 68A
Power dissipation: 107W
Drain-source voltage: 250V
на замовлення 482 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.94 грн |
4+ | 128.26 грн |
10+ | 121.13 грн |
TLE4946KHTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
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IPU95R750P7AKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Gate charge: 23nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 73W
Technology: CoolMOS™ P7
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Gate charge: 23nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 73W
Technology: CoolMOS™ P7
на замовлення 150 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 87.09 грн |
10+ | 81.55 грн |
14+ | 70.46 грн |
37+ | 66.50 грн |
75+ | 63.34 грн |
TT210N12KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Max. forward voltage: 1.65V
Load current: 210A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 6.6kA
Case: BG-PB50-1
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Max. forward voltage: 1.65V
Load current: 210A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 6.6kA
Case: BG-PB50-1
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 6511.43 грн |
IRF6218STRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRLP3034PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 327A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 108nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 327A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 108nC
на замовлення 15 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 356.39 грн |
6+ | 168.64 грн |
IRFP7430PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 173.93 грн |
S29AL008J55BFIR10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J55BFIR20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J55BFIR22 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J55TFIR10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J55TFIR20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J55TFNR10 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J55TFNR20 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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В кошику
од. на суму грн.
S29AL008J70BAN020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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В кошику
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S29AL008J70BFI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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В кошику
од. на суму грн.
S29AL008J70BFI013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J70BFI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J70BFI022 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J70BFI023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J70BFM023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Application: automotive
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Application: automotive
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J70BFN010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J70BFN020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J70TFI013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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од. на суму грн.
S29AL008J70TFI023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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од. на суму грн.
S29AL008J70TFN010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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од. на суму грн.
S29AL008J70TFN020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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SPD30P06PGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 1075 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 127.04 грн |
5+ | 87.88 грн |
10+ | 76.80 грн |
16+ | 60.17 грн |
43+ | 57.00 грн |
50+ | 56.21 грн |
100+ | 54.63 грн |
BAS7007E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. off-state voltage: 70V
Semiconductor structure: double independent
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. off-state voltage: 70V
Semiconductor structure: double independent
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.32 грн |
27+ | 15.12 грн |
100+ | 10.13 грн |
149+ | 6.25 грн |
411+ | 5.94 грн |
IRLR3410TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Pulsed drain current: 60A
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FF300R12KS4 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 15628.46 грн |
BSC120N03LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 33A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 33A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC120N03MSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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CY7C1520KV18-333BZXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
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IRS21531DSTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Voltage class: 600V
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Voltage class: 600V
Kind of package: reel; tape
на замовлення 1923 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 81.85 грн |
10+ | 54.63 грн |
18+ | 53.04 грн |
25+ | 49.88 грн |
50+ | 48.29 грн |
BCR400WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Case: SOT343
Mounting: SMD
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Case: SOT343
Mounting: SMD
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Kind of package: reel; tape
на замовлення 2877 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.49 грн |
37+ | 10.93 грн |
42+ | 9.50 грн |
51+ | 7.84 грн |
59+ | 6.81 грн |
100+ | 6.57 грн |
357+ | 6.49 грн |
BSS606NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 710 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.07 грн |
14+ | 28.50 грн |
50+ | 22.09 грн |
75+ | 12.43 грн |
206+ | 11.72 грн |
IRLS3036TRL7PP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
на замовлення 373 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 184.17 грн |
5+ | 157.55 грн |