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S25FL512SAGBHVC13 INFINEON TECHNOLOGIES S25FL512S_00.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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S25FL512SAGBHVD10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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S25FL512SAGMFA010 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFAG10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFB010 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFBG10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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S25FL512SAGMFI013 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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S25FL512SAGMFIG10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
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AUIRFN7107TR AUIRFN7107TR INFINEON TECHNOLOGIES auirfn7107.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 300W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 51nC
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
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AUIRFN8459TR AUIRFN8459TR INFINEON TECHNOLOGIES AUIRFN8459.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 40nC
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
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S25FL064LABMFA010 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S25FL064LABMFA011 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
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S25FL064LABMFA013 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S25FL128LAGMFA010 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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S70FL01GSAGMFA010 INFINEON TECHNOLOGIES Infineon-S70FL01GS_1_Gbit_(128_Mbyte)_3.0V_SPI_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb3adf5e12&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_2_3_1 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
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IPP052NE7N3GXKSA1 IPP052NE7N3GXKSA1 INFINEON TECHNOLOGIES IPP052NE7N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
3+133.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP042N03LGXKSA1 IPP042N03LGXKSA1 INFINEON TECHNOLOGIES IPP042N03LG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 30V
Drain current: 70A
On-state resistance: 4.2mΩ
Power dissipation: 79W
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
5+94.68 грн
10+81.04 грн
17+55.04 грн
46+51.99 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPA057N06N3GXKSA1 IPA057N06N3GXKSA1 INFINEON TECHNOLOGIES IPA057N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
3+203.35 грн
10+143.72 грн
12+80.27 грн
32+75.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP057N06N3GXKSA1 IPP057N06N3GXKSA1 INFINEON TECHNOLOGIES IPP057N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
4+103.74 грн
10+76.45 грн
18+53.51 грн
48+50.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPA040N08NM5SXKSA1 IPA040N08NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA040N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cf4ced66e27 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 300A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 300A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
3+131.49 грн
9+107.79 грн
24+101.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA083N10NM5SXKSA1 IPA083N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
на замовлення 470 шт:
термін постачання 21-30 дні (днів)
4+103.21 грн
10+90.97 грн
11+83.33 грн
31+78.74 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPI530N15N3GXKSA1 IPI530N15N3GXKSA1 INFINEON TECHNOLOGIES IPI530N15N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 68W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: THT
Kind of channel: enhancement
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IPP048N04NGXKSA1 IPP048N04NGXKSA1 INFINEON TECHNOLOGIES IPP048N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA80R360P7XKSA1 IPA80R360P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPA80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b23b4067a2b98 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 800V
Drain current: 8.6A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 34A
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
3+160.54 грн
9+102.44 грн
25+96.33 грн
50+95.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SPD08P06PGBTMA1 SPD08P06PGBTMA1 INFINEON TECHNOLOGIES SPD08P06PGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
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AUIPS7091GTR AUIPS7091GTR INFINEON TECHNOLOGIES auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
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IDW15E65D2FKSA1 IDW15E65D2FKSA1 INFINEON TECHNOLOGIES IDW15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
5+76.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IDV15E65D2XKSA1 IDV15E65D2XKSA1 INFINEON TECHNOLOGIES IDV15E65D2.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220FP-2
на замовлення 139 шт:
термін постачання 21-30 дні (днів)
6+78.21 грн
10+68.80 грн
19+48.16 грн
52+45.87 грн
Мінімальне замовлення: 6
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IPI147N12N3GAKSA1 IPI147N12N3GAKSA1 INFINEON TECHNOLOGIES IPI147N12N3G-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 56A
Power dissipation: 107W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: THT
Kind of channel: enhancement
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TT104N14KOF TT104N14KOF INFINEON TECHNOLOGIES TT104N14KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 104A; BG-PB20-1; screw
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB20-1
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+11023.93 грн
15+10095.07 грн
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TT104N12KOFHPSA1 TT104N12KOFHPSA1 INFINEON TECHNOLOGIES TT104N14KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Case: BG-PB20-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
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TT104N12KOFKHPSA1 TT104N12KOFKHPSA1 INFINEON TECHNOLOGIES TT104N_Type.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Case: BG-PB20-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
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IR2011PBF IR2011PBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
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IRFH6200TRPBF IRFH6200TRPBF INFINEON TECHNOLOGIES irfh6200pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1 INFINEON TECHNOLOGIES BSZ180P03NS3GATMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
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BSZ180P03NS3EGATMA BSZ180P03NS3EGATMA INFINEON TECHNOLOGIES BSZ180P03NS3EGATMA-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
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IRF7420TRPBF IRF7420TRPBF INFINEON TECHNOLOGIES irf7420pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIPS71451GTR AUIPS71451GTR INFINEON TECHNOLOGIES auips71451g.pdf?fileId=5546d462533600a4015355a7f7461332 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
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IDH08SG60CXKSA2 IDH08SG60CXKSA2 INFINEON TECHNOLOGIES IDH08SG60C.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; PG-TO220-2; 100W
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 42A
Leakage current: 0.6µA
Power dissipation: 100W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: PG-TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
2+304.62 грн
6+155.19 грн
17+146.78 грн
Мінімальне замовлення: 2
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IDD09SG60C IDD09SG60C INFINEON TECHNOLOGIES IDD09SG60C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 9A; 115W
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 42A
Leakage current: 0.7µA
Power dissipation: 115W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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IDH03SG60CXKSA2 IDH03SG60CXKSA2 INFINEON TECHNOLOGIES IDH03SG60C.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 3A; TO220-2; Ufmax: 2.8V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 9.7A
Power dissipation: 38W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.8V
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IDD04SG60C IDD04SG60C INFINEON TECHNOLOGIES IDD04SG60C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 4A; 43W
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 13.5A
Leakage current: 0.3µA
Power dissipation: 43W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
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IDH12SG60C IDH12SG60C INFINEON TECHNOLOGIES IDH12SG60C-DTE.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; PG-TO220-2; Ir: 1uA
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 59A
Leakage current: 1µA
Power dissipation: 125W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: PG-TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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IDD10SG60C IDD10SG60C INFINEON TECHNOLOGIES IDD10SG60C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 10A; 120W
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 44A
Leakage current: 0.8µA
Power dissipation: 120W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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IDD05SG60C IDD05SG60C INFINEON TECHNOLOGIES IDD05SG60C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 5A; 56W
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 18A
Leakage current: 0.4µA
Power dissipation: 56W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
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IDD06SG60C IDD06SG60C INFINEON TECHNOLOGIES IDD06SG60C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 6A; 71W
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 23A
Leakage current: 0.5µA
Power dissipation: 71W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
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IDD12SG60C IDD12SG60C INFINEON TECHNOLOGIES IDD12SG60C-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 12A; 125W
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 51A
Leakage current: 1µA
Power dissipation: 125W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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IDH10SG60C IDH10SG60C INFINEON TECHNOLOGIES IDH10SG60C-DTE.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; PG-TO220-2; 120W
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 51A
Leakage current: 0.8µA
Power dissipation: 120W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: PG-TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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IDD03SG60C IDD03SG60C INFINEON TECHNOLOGIES IDD03SG60C.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 9.7A
Leakage current: 0.23µA
Power dissipation: 38W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
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IDH09SG60C IDH09SG60C INFINEON TECHNOLOGIES IDH09SG60C.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 9A; PG-TO220-2; 115W
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 49A
Leakage current: 0.7µA
Power dissipation: 115W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: PG-TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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2EDF7275FXUMA1 2EDF7275FXUMA1 INFINEON TECHNOLOGIES 2EDF7xx5F_K_H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -8...4A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
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CY7C1460KVE33-167AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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CY7C1460KVE33-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
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BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 INFINEON TECHNOLOGIES BSL308PEH6327XTSA1-DTE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Case: PG-TSOP-6
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 0.5W
Polarisation: unipolar
Version: ESD
Technology: OptiMOS™ P3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 2062 шт:
термін постачання 21-30 дні (днів)
11+39.52 грн
14+28.21 грн
40+25.23 грн
53+17.43 грн
145+16.51 грн
400+16.21 грн
500+15.90 грн
Мінімальне замовлення: 11
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BSS308PEH6327XTSA1 BSS308PEH6327XTSA1 INFINEON TECHNOLOGIES BSS308PEH6327XTSA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Case: PG-SOT23
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 4730 шт:
термін постачання 21-30 дні (днів)
14+31.29 грн
21+18.50 грн
50+13.38 грн
100+11.70 грн
175+5.27 грн
482+4.97 грн
Мінімальне замовлення: 14
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BTS3035TF BTS3035TF INFINEON TECHNOLOGIES BTS3035TF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Turn-off time: 210µs
Kind of integrated circuit: low-side
Output voltage: 40V
Turn-on time: 115µs
на замовлення 1153 шт:
термін постачання 21-30 дні (днів)
4+99.38 грн
10+93.27 грн
15+63.45 грн
40+59.63 грн
1000+56.57 грн
Мінімальне замовлення: 4
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BTS3035EJ BTS3035EJ INFINEON TECHNOLOGIES BTS3035EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Turn-off time: 210µs
Kind of integrated circuit: low-side
Output voltage: 40V
Turn-on time: 115µs
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
4+107.03 грн
5+89.45 грн
18+51.99 грн
49+48.93 грн
Мінімальне замовлення: 4
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XMC4800F144F1024AAXQMA1 XMC4800F144F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
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XMC4800F100F1024AAXQMA1 XMC4800F100F1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
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XMC4800F144K1024AAXQMA1 XMC4800F144K1024AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Case: PG-LQFP-144
Operating temperature: -40...125°C
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Supply voltage: 3.3V DC
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
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S25FL512SAGBHVC13 S25FL512S_00.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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S25FL512SAGBHVD10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
товару немає в наявності
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S25FL512SAGMFA010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SAGMFAG10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SAGMFB010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SAGMFBG10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SAGMFI013 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
S25FL512SAGMFIG10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
товару немає в наявності
В кошику  од. на суму  грн.
AUIRFN7107TR auirfn7107.pdf
AUIRFN7107TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 53A
Power dissipation: 300W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 51nC
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
товару немає в наявності
В кошику  од. на суму  грн.
AUIRFN8459TR AUIRFN8459.pdf
AUIRFN8459TR
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 50W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 50W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 40nC
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
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S25FL064LABMFA010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
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S25FL064LABMFA011 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
товару немає в наявності
В кошику  од. на суму  грн.
S25FL064LABMFA013 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
товару немає в наявності
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S25FL128LAGMFA010 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
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S70FL01GSAGMFA010 Infineon-S70FL01GS_1_Gbit_(128_Mbyte)_3.0V_SPI_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb3adf5e12&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_2_3_1
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
товару немає в наявності
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IPP052NE7N3GXKSA1 IPP052NE7N3G-DTE.pdf
IPP052NE7N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 150W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+133.79 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP042N03LGXKSA1 IPP042N03LG-DTE.pdf
IPP042N03LGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 30V
Drain current: 70A
On-state resistance: 4.2mΩ
Power dissipation: 79W
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+94.68 грн
10+81.04 грн
17+55.04 грн
46+51.99 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPA057N06N3GXKSA1 IPA057N06N3G-DTE.pdf
IPA057N06N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 89 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+203.35 грн
10+143.72 грн
12+80.27 грн
32+75.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP057N06N3GXKSA1 IPP057N06N3G-DTE.pdf
IPP057N06N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+103.74 грн
10+76.45 грн
18+53.51 грн
48+50.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPA040N08NM5SXKSA1 Infineon-IPA040N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cf4ced66e27
IPA040N08NM5SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 300A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 300A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+131.49 грн
9+107.79 грн
24+101.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPA083N10NM5SXKSA1 Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30
IPA083N10NM5SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
на замовлення 470 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+103.21 грн
10+90.97 грн
11+83.33 грн
31+78.74 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPI530N15N3GXKSA1 IPI530N15N3G-DTE.pdf
IPI530N15N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 68W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPP048N04NGXKSA1 IPP048N04NG-DTE.pdf
IPP048N04NGXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 70A
Power dissipation: 79W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPA80R360P7XKSA1 Infineon-IPA80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b23b4067a2b98
IPA80R360P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Mounting: THT
Case: TO220FP
Kind of package: tube
Drain-source voltage: 800V
Drain current: 8.6A
On-state resistance: 0.36Ω
Type of transistor: N-MOSFET
Power dissipation: 30W
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 34A
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+160.54 грн
9+102.44 грн
25+96.33 грн
50+95.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SPD08P06PGBTMA1 SPD08P06PGBTMA1-DTE.pdf
SPD08P06PGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.8A; 42W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.8A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
AUIPS7091GTR auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322
AUIPS7091GTR
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
IDW15E65D2FKSA1 IDW15E65D2.pdf
IDW15E65D2FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO247-3
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+76.45 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IDV15E65D2XKSA1 IDV15E65D2.pdf
IDV15E65D2XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220FP-2
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Case: TO220FP-2
на замовлення 139 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+78.21 грн
10+68.80 грн
19+48.16 грн
52+45.87 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPI147N12N3GAKSA1 IPI147N12N3G-dte.pdf
IPI147N12N3GAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 56A
Power dissipation: 107W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: THT
Kind of channel: enhancement
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TT104N14KOF TT104N14KOF.pdf
TT104N14KOF
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 104A; BG-PB20-1; screw
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
Case: BG-PB20-1
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+11023.93 грн
15+10095.07 грн
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TT104N12KOFHPSA1 TT104N14KOF.pdf
TT104N12KOFHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Case: BG-PB20-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
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TT104N12KOFKHPSA1 TT104N_Type.pdf
TT104N12KOFKHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Case: BG-PB20-1
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.62V
Load current: 104A
Semiconductor structure: double series
Gate current: 120mA
Max. forward impulse current: 2.05kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: thyristor
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IR2011PBF description IR2011SPBF.pdf
IR2011PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
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IRFH6200TRPBF irfh6200pbf.pdf
IRFH6200TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
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BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1-DTE.pdf
BSZ180P03NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
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BSZ180P03NS3EGATMA BSZ180P03NS3EGATMA-DTE.pdf
BSZ180P03NS3EGATMA
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -39.6A
Power dissipation: 40W
Case: PG-TSDSON-8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
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IRF7420TRPBF irf7420pbf.pdf
IRF7420TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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AUIPS71451GTR auips71451g.pdf?fileId=5546d462533600a4015355a7f7461332
AUIPS71451GTR
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
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IDH08SG60CXKSA2 IDH08SG60C.pdf
IDH08SG60CXKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; PG-TO220-2; 100W
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 42A
Leakage current: 0.6µA
Power dissipation: 100W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: PG-TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+304.62 грн
6+155.19 грн
17+146.78 грн
Мінімальне замовлення: 2
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IDD09SG60C IDD09SG60C-DTE.pdf
IDD09SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 9A; 115W
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 42A
Leakage current: 0.7µA
Power dissipation: 115W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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IDH03SG60CXKSA2 IDH03SG60C.pdf
IDH03SG60CXKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 3A; TO220-2; Ufmax: 2.8V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 9.7A
Power dissipation: 38W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.8V
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IDD04SG60C IDD04SG60C-DTE.pdf
IDD04SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 4A; 43W
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 13.5A
Leakage current: 0.3µA
Power dissipation: 43W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
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IDH12SG60C IDH12SG60C-DTE.pdf
IDH12SG60C
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; PG-TO220-2; Ir: 1uA
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 59A
Leakage current: 1µA
Power dissipation: 125W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: PG-TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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IDD10SG60C IDD10SG60C-DTE.pdf
IDD10SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 10A; 120W
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 44A
Leakage current: 0.8µA
Power dissipation: 120W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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IDD05SG60C IDD05SG60C-DTE.pdf
IDD05SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 5A; 56W
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 18A
Leakage current: 0.4µA
Power dissipation: 56W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
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IDD06SG60C IDD06SG60C-DTE.pdf
IDD06SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 6A; 71W
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 23A
Leakage current: 0.5µA
Power dissipation: 71W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
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IDD12SG60C IDD12SG60C-DTE.pdf
IDD12SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 12A; 125W
Load current: 12A
Semiconductor structure: single diode
Max. forward impulse current: 51A
Leakage current: 1µA
Power dissipation: 125W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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IDH10SG60C IDH10SG60C-DTE.pdf
IDH10SG60C
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; PG-TO220-2; 120W
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 51A
Leakage current: 0.8µA
Power dissipation: 120W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: PG-TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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IDD03SG60C IDD03SG60C.pdf
IDD03SG60C
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 9.7A
Leakage current: 0.23µA
Power dissipation: 38W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: SMD
Case: PG-TO252-3
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.1V
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IDH09SG60C IDH09SG60C.pdf
IDH09SG60C
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 9A; PG-TO220-2; 115W
Load current: 9A
Semiconductor structure: single diode
Max. forward impulse current: 49A
Leakage current: 0.7µA
Power dissipation: 115W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: CoolSiC™ 3G; SiC
Mounting: THT
Case: PG-TO220-2
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
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2EDF7275FXUMA1 2EDF7xx5F_K_H.pdf
2EDF7275FXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -8...4A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
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CY7C1460KVE33-167AXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
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CY7C1460KVE33-200AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
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BSL308PEH6327XTSA1 BSL308PEH6327XTSA1-DTE.pdf
BSL308PEH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Case: PG-TSOP-6
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 0.5W
Polarisation: unipolar
Version: ESD
Technology: OptiMOS™ P3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 2062 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.52 грн
14+28.21 грн
40+25.23 грн
53+17.43 грн
145+16.51 грн
400+16.21 грн
500+15.90 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BSS308PEH6327XTSA1 BSS308PEH6327XTSA1-DTE.pdf
BSS308PEH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; PG-SOT23
Case: PG-SOT23
Drain-source voltage: -30V
Drain current: -2A
On-state resistance: 80mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ P3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 4730 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+31.29 грн
21+18.50 грн
50+13.38 грн
100+11.70 грн
175+5.27 грн
482+4.97 грн
Мінімальне замовлення: 14
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BTS3035TF BTS3035TF.pdf
BTS3035TF
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Turn-off time: 210µs
Kind of integrated circuit: low-side
Output voltage: 40V
Turn-on time: 115µs
на замовлення 1153 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+99.38 грн
10+93.27 грн
15+63.45 грн
40+59.63 грн
1000+56.57 грн
Мінімальне замовлення: 4
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BTS3035EJ BTS3035EJ.pdf
BTS3035EJ
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Operating temperature: -40...150°C
Technology: HITFET®
Turn-off time: 210µs
Kind of integrated circuit: low-side
Output voltage: 40V
Turn-on time: 115µs
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+107.03 грн
5+89.45 грн
18+51.99 грн
49+48.93 грн
Мінімальне замовлення: 4
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XMC4800F144F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F144F1024AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-144
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
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XMC4800F100F1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F100F1024AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-100
Memory: 200kB SRAM; 1MB FLASH
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Operating temperature: -40...85°C
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
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XMC4800F144K1024AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800F144K1024AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 200kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Case: PG-LQFP-144
Operating temperature: -40...125°C
Kind of architecture: Cortex M4
Family: XMC4800
Memory: 200kB SRAM; 1MB FLASH
Supply voltage: 3.3V DC
Number of inputs/outputs: 119
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
товару немає в наявності
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