Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149543) > Сторінка 2460 з 2493

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S29GL01GT11DHV023 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11FHIV10 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11FHIV20 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11FHIV23 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11TFB020 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11TFIV10 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11TFIV20 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S70GL02GT11FHB013 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S70GL02GT11FHI010 INFINEON TECHNOLOGIES Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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FM25L16B-DG INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
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FM25L16B-DGTR INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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CY7C1312KV18-250BZXCT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
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FM25CL64B-DGTR INFINEON TECHNOLOGIES Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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FM25L04B-DGTR INFINEON TECHNOLOGIES Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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FM25V05-GTR INFINEON TECHNOLOGIES Infineon-FM25V05_512-Kbit_(64_K_8)_Serial_(SPI)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe00d53121&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 512kb FRAM
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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FM25V10-DG INFINEON TECHNOLOGIES Infineon-FM25V10_1_Mbit_128K_X_8_Serial_SPI_F_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7c4f91516 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
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S25FL128LAGNFB013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
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TLV4906KFTSA1 TLV4906KFTSA1 INFINEON TECHNOLOGIES TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
на замовлення 1603 шт:
термін постачання 21-30 дні (днів)
17+25.58 грн
25+19.16 грн
45+19.08 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IRFSL7440PBF IRFSL7440PBF INFINEON TECHNOLOGIES irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 147A
Pulsed drain current: 772A
Power dissipation: 208W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+426.31 грн
В кошику  од. на суму  грн.
CY62168EV30LL-45BVXIT INFINEON TECHNOLOGIES ?docID=50111 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62168EV30LL-45BVXI INFINEON TECHNOLOGIES Infineon-CY62168EV30_MOBL_16_MBIT_(2M_x_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebedce432c8 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
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BFQ19SH6327XTSA1 BFQ19SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C0C542C2A11C&compId=BFQ19SH6327XTSA1-dte.pdf?ci_sign=308d2c563328e90936001c00c9e93dc4a527b52a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
на замовлення 641 шт:
термін постачання 21-30 дні (днів)
12+37.52 грн
18+23.04 грн
25+20.90 грн
100+19.87 грн
Мінімальне замовлення: 12
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IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 INFINEON TECHNOLOGIES Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
On-state resistance: 0.1Ω
Drain current: 13.3A
Gate-source voltage: ±20V
Pulsed drain current: 68A
Power dissipation: 107W
Drain-source voltage: 250V
на замовлення 482 шт:
термін постачання 21-30 дні (днів)
3+144.94 грн
4+128.26 грн
10+121.13 грн
Мінімальне замовлення: 3
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TLE4946KHTSA1 INFINEON TECHNOLOGIES TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379 Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
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IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9BA7A7AA8BC143&compId=IPU95R750P7.pdf?ci_sign=472403093c92524bad78203a01b30d3031a576e3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Gate charge: 23nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 73W
Technology: CoolMOS™ P7
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
5+87.09 грн
10+81.55 грн
14+70.46 грн
37+66.50 грн
75+63.34 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TT210N12KOF TT210N12KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE521B282F6469&compId=TT210N12KOF.pdf?ci_sign=f7eaf7806bc8e7ae42f1597e6f4e3ad04450ee9d Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Max. forward voltage: 1.65V
Load current: 210A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 6.6kA
Case: BG-PB50-1
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+6511.43 грн
В кошику  од. на суму  грн.
IRF6218STRLPBF IRF6218STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F676E2293A6F1A303005056AB0C4F&compId=irf6218spbf.pdf?ci_sign=b2d854f32eaee6ca2234c84bf89ef10ff97de354 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRLP3034PBF IRLP3034PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F58261FF1A6F5005056AB5A8F&compId=irlp3034pbf.pdf?ci_sign=9128909fc18795a56482a4b00afac011ad104a23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 327A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 108nC
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
2+356.39 грн
6+168.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFP7430PBF IRFP7430PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEB797742D5EA&compId=IRFP7430PBF.pdf?ci_sign=00881c1d66098117f06e4885f5e79cb15cc02fd0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
3+173.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S29AL008J55BFIR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J55BFIR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J55BFIR22 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J55TFIR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J55TFIR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J55TFNR10 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J55TFNR20 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70BAN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70BFI010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70BFI013 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70BFI022 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70BFI023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70BFM023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Application: automotive
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J70BFN010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70BFN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J70TFI013 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70TFI023 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70TFN010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70TFN020 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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SPD30P06PGBTMA1 SPD30P06PGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D8893CBA51CC&compId=SPD30P06PGBTMA1-DTE.pdf?ci_sign=1336cadb1b80dbd9173ab792431c3392d8afa7d0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 1075 шт:
термін постачання 21-30 дні (днів)
4+127.04 грн
5+87.88 грн
10+76.80 грн
16+60.17 грн
43+57.00 грн
50+56.21 грн
100+54.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BAS7007E6327 BAS7007E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. off-state voltage: 70V
Semiconductor structure: double independent
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)
20+21.32 грн
27+15.12 грн
100+10.13 грн
149+6.25 грн
411+5.94 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRLR3410TRLPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Pulsed drain current: 60A
товару немає в наявності
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FF300R12KS4 FF300R12KS4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9345B52A7BD1CC&compId=FF300R12KS4-dte.pdf?ci_sign=915a25c84faf5048f01515fc4bae1ba7d52cac62 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+15628.46 грн
В кошику  од. на суму  грн.
BSC120N03LSGATMA1 BSC120N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA054235A211C&compId=BSC120N03LSG-DTE.pdf?ci_sign=946238703efb8cfb797f73bad01e4f824095455e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 33A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC120N03MSGATMA1 BSC120N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA2C2B695E11C&compId=BSC120N03MSG-DTE.pdf?ci_sign=1534942e68b54aa8c7996b16f304df746fc732c3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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CY7C1520KV18-333BZXI INFINEON TECHNOLOGIES Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
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IRS21531DSTRPBF IRS21531DSTRPBF INFINEON TECHNOLOGIES IRSDS08244-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Voltage class: 600V
Kind of package: reel; tape
на замовлення 1923 шт:
термін постачання 21-30 дні (днів)
6+81.85 грн
10+54.63 грн
18+53.04 грн
25+49.88 грн
50+48.29 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BCR400WH6327XTSA1 BCR400WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A2EDFC26DD3820&compId=BCR400W.pdf?ci_sign=006cd1b97ef4c09c4e711c708b77bf78b65f7373 Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Case: SOT343
Mounting: SMD
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Kind of package: reel; tape
на замовлення 2877 шт:
термін постачання 21-30 дні (днів)
30+14.49 грн
37+10.93 грн
42+9.50 грн
51+7.84 грн
59+6.81 грн
100+6.57 грн
357+6.49 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A820D4E7D1F10B&compId=BSS606NH6327XTSA1.pdf?ci_sign=d3e7cbc8506ee2b389230eb6c41319a56a0d32e7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 710 шт:
термін постачання 21-30 дні (днів)
11+40.07 грн
14+28.50 грн
50+22.09 грн
75+12.43 грн
206+11.72 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IRLS3036TRL7PP IRLS3036TRL7PP INFINEON TECHNOLOGIES irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
на замовлення 373 шт:
термін постачання 21-30 дні (днів)
3+184.17 грн
5+157.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S29GL01GT11DHV023 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11FHIV10 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11FHIV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11FHIV23 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11TFB020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S29GL01GT11TFIV10 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
товару немає в наявності
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S29GL01GT11TFIV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S70GL02GT11FHB013
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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S70GL02GT11FHI010 Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
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FM25L16B-DG Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
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FM25L16B-DGTR Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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CY7C1312KV18-250BZXCT download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
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FM25CL64B-DGTR Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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FM25L04B-DGTR Infineon-FM25L04B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec90ed44178&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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FM25V05-GTR Infineon-FM25V05_512-Kbit_(64_K_8)_Serial_(SPI)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe00d53121&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 512kb FRAM
Memory organisation: 64kx8bit
Clock frequency: 40MHz
Case: SOIC8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of package: reel; tape
Interface: SPI
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FM25V10-DG Infineon-FM25V10_1_Mbit_128K_X_8_Serial_SPI_F_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f1be7c4f91516
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Memory organisation: 128kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: SPI
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S25FL128LAGNFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Application: automotive
Operating temperature: -40...105°C
Operating frequency: 133MHz
Kind of package: reel; tape
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TLV4906KFTSA1 TLV4906x_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d590121544295e605cd
TLV4906KFTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; SC59; 4.7÷13.9mT; Usup: 2.7÷18VDC; Temp: -40÷85°C
Type of sensor: Hall
Case: SC59
Range of detectable magnetic field: 4.7...13.9mT
Supply voltage: 2.7...18V DC
Operating temperature: -40...85°C
Output configuration: analogue voltage
Operation mode: unipolar
на замовлення 1603 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.58 грн
25+19.16 грн
45+19.08 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IRFSL7440PBF irfs7440pbf.pdf?fileId=5546d462533600a40153563a95f721d5
IRFSL7440PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 147A; Idm: 772A; 208W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 147A
Pulsed drain current: 772A
Power dissipation: 208W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+426.31 грн
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CY62168EV30LL-45BVXIT ?docID=50111
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62168EV30LL-45BVXI Infineon-CY62168EV30_MOBL_16_MBIT_(2M_x_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebedce432c8
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 45ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
товару немає в наявності
В кошику  од. на суму  грн.
BFQ19SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191C0C542C2A11C&compId=BFQ19SH6327XTSA1-dte.pdf?ci_sign=308d2c563328e90936001c00c9e93dc4a527b52a
BFQ19SH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
на замовлення 641 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.52 грн
18+23.04 грн
25+20.90 грн
100+19.87 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
IPP17N25S3100AKSA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPP17N25S3100AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
On-state resistance: 0.1Ω
Drain current: 13.3A
Gate-source voltage: ±20V
Pulsed drain current: 68A
Power dissipation: 107W
Drain-source voltage: 250V
на замовлення 482 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+144.94 грн
4+128.26 грн
10+121.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE4946KHTSA1 TLE4946K_DS_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a30431f848401011fbc901e4d6379
Виробник: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; latch; SC59; -19÷19mT; Usup: 2.7÷18VDC; SMT
Mounting: SMT
Kind of sensor: latch
Operating temperature: -40...150°C
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: -19...19mT
Case: SC59
Type of sensor: Hall
товару немає в наявності
В кошику  од. на суму  грн.
IPU95R750P7AKMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AF9BA7A7AA8BC143&compId=IPU95R750P7.pdf?ci_sign=472403093c92524bad78203a01b30d3031a576e3
IPU95R750P7AKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Gate charge: 23nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 73W
Technology: CoolMOS™ P7
на замовлення 150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+87.09 грн
10+81.55 грн
14+70.46 грн
37+66.50 грн
75+63.34 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TT210N12KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE521B282F6469&compId=TT210N12KOF.pdf?ci_sign=f7eaf7806bc8e7ae42f1597e6f4e3ad04450ee9d
TT210N12KOF
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Max. forward voltage: 1.65V
Load current: 210A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 6.6kA
Case: BG-PB50-1
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6511.43 грн
В кошику  од. на суму  грн.
IRF6218STRLPBF pVersion=0046&contRep=ZT&docId=E21F676E2293A6F1A303005056AB0C4F&compId=irf6218spbf.pdf?ci_sign=b2d854f32eaee6ca2234c84bf89ef10ff97de354
IRF6218STRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -27A; 250W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -27A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IRLP3034PBF pVersion=0046&contRep=ZT&docId=E1C04E8F58261FF1A6F5005056AB5A8F&compId=irlp3034pbf.pdf?ci_sign=9128909fc18795a56482a4b00afac011ad104a23
IRLP3034PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 327A; 341W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 327A
Power dissipation: 341W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate charge: 108nC
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+356.39 грн
6+168.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFP7430PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEB797742D5EA&compId=IRFP7430PBF.pdf?ci_sign=00881c1d66098117f06e4885f5e79cb15cc02fd0
IRFP7430PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+173.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S29AL008J55BFIR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J55BFIR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J55BFIR22 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J55TFIR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J55TFIR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J55TFNR10 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J55TFNR20 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BAN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70BFI010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI013 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI022 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFI023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFM023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Application: automotive
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFN010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70BFN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70TFI013 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
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S29AL008J70TFI023 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
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S29AL008J70TFN010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
S29AL008J70TFN020 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику  од. на суму  грн.
SPD30P06PGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92D8893CBA51CC&compId=SPD30P06PGBTMA1-DTE.pdf?ci_sign=1336cadb1b80dbd9173ab792431c3392d8afa7d0
SPD30P06PGBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 1075 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+127.04 грн
5+87.88 грн
10+76.80 грн
16+60.17 грн
43+57.00 грн
50+56.21 грн
100+54.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BAS7007E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7007E6327
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. off-state voltage: 70V
Semiconductor structure: double independent
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.32 грн
27+15.12 грн
100+10.13 грн
149+6.25 грн
411+5.94 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRLR3410TRLPBF irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Pulsed drain current: 60A
товару немає в наявності
В кошику  од. на суму  грн.
FF300R12KS4 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9345B52A7BD1CC&compId=FF300R12KS4-dte.pdf?ci_sign=915a25c84faf5048f01515fc4bae1ba7d52cac62
FF300R12KS4
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+15628.46 грн
В кошику  од. на суму  грн.
BSC120N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA054235A211C&compId=BSC120N03LSG-DTE.pdf?ci_sign=946238703efb8cfb797f73bad01e4f824095455e
BSC120N03LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 33A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
BSC120N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA2C2B695E11C&compId=BSC120N03MSG-DTE.pdf?ci_sign=1534942e68b54aa8c7996b16f304df746fc732c3
BSC120N03MSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
товару немає в наявності
В кошику  од. на суму  грн.
CY7C1520KV18-333BZXI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
товару немає в наявності
В кошику  од. на суму  грн.
IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DSTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Voltage class: 600V
Kind of package: reel; tape
на замовлення 1923 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+81.85 грн
10+54.63 грн
18+53.04 грн
25+49.88 грн
50+48.29 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BCR400WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A2EDFC26DD3820&compId=BCR400W.pdf?ci_sign=006cd1b97ef4c09c4e711c708b77bf78b65f7373
BCR400WH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Case: SOT343
Mounting: SMD
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Kind of package: reel; tape
на замовлення 2877 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.49 грн
37+10.93 грн
42+9.50 грн
51+7.84 грн
59+6.81 грн
100+6.57 грн
357+6.49 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BSS606NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A820D4E7D1F10B&compId=BSS606NH6327XTSA1.pdf?ci_sign=d3e7cbc8506ee2b389230eb6c41319a56a0d32e7
BSS606NH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 710 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.07 грн
14+28.50 грн
50+22.09 грн
75+12.43 грн
206+11.72 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
на замовлення 373 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+184.17 грн
5+157.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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