Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149504) > Сторінка 2460 з 2492
Фото | Назва | Виробник | Інформація |
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S29AL008J70BFI010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFI020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFI022 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFM023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Application: automotive Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFN010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70BFN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: VFBGA48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70TFI013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70TFI023 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70TFN010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29AL008J70TFN020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel Type of integrated circuit: FLASH memory Mounting: SMD Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Case: TSOP48 Operating temperature: -40...125°C Access time: 70ns Operating voltage: 2.7...3.6V Memory: 8Mb FLASH Interface: CFI; parallel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SPD30P06PGBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -30A Power dissipation: 125W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ |
на замовлення 1075 шт: термін постачання 21-30 дні (днів) |
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BAS7007E6327 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW Case: SOT143 Mounting: SMD Type of diode: Schottky switching Load current: 70mA Max. forward impulse current: 0.1A Power dissipation: 0.25W Max. off-state voltage: 70V Semiconductor structure: double independent |
на замовлення 2470 шт: термін постачання 21-30 дні (днів) |
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IRLR3410TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 79W Case: DPAK Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±16V On-state resistance: 0.105Ω Pulsed drain current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FF300R12KS4 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: AG-62MM-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Power dissipation: 1.95kW Mechanical mounting: screw |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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BSC120N03LSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8 Mounting: SMD On-state resistance: 12mΩ Drain current: 33A Gate-source voltage: ±20V Power dissipation: 28W Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Case: PG-TDSON-8 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC120N03MSGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8 Mounting: SMD On-state resistance: 12mΩ Drain current: 36A Gate-source voltage: ±20V Power dissipation: 28W Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Case: PG-TDSON-8 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
CY7C1520KV18-333BZXI | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Case: FBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.7...1.9V DC Frequency: 333MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRS21531DSTRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality Case: SO8 Type of integrated circuit: driver Mounting: SMD Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Operating temperature: -40...125°C Output current: -260...180mA Turn-off time: 50ns Turn-on time: 0.12µs Power: 625mW Number of channels: 2 Supply voltage: 10.1...16.8V DC Voltage class: 600V Kind of package: reel; tape |
на замовлення 1923 шт: термін постачання 21-30 дні (днів) |
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BCR400WH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller Case: SOT343 Mounting: SMD Power: 0.33W Supply voltage: 1.6...18V DC Integrated circuit features: active bias controller Type of integrated circuit: driver Kind of package: reel; tape |
на замовлення 2877 шт: термін постачання 21-30 дні (днів) |
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BSS606NH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Power dissipation: 1W Case: PG-SOT89 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 710 шт: термін постачання 21-30 дні (днів) |
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IRLS3036TRL7PP | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 380W Case: D2PAK-7 Mounting: SMD Kind of channel: enhancement On-state resistance: 1.9mΩ Gate-source voltage: ±16V Pulsed drain current: 1kA |
на замовлення 373 шт: термін постачання 21-30 дні (днів) |
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1EDF5673FXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16 Technology: EiceDRIVER™; GaN Case: PG-DSO-16 Mounting: SMD Kind of package: reel; tape Voltage class: 650V Kind of integrated circuit: gate driver; high-side Type of integrated circuit: driver Topology: single transistor Output current: -8...4A Number of channels: 1 Supply voltage: 3...3.5V; 6.5...20V Integrated circuit features: galvanically isolated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH7110TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFTS9342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6 Kind of package: reel Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -5.8A Power dissipation: 2W Case: TSOP6 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFTS8342TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.2A Power dissipation: 2W Technology: HEXFET® Kind of channel: enhancement |
на замовлення 1930 шт: термін постачання 21-30 дні (днів) |
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2EDS8165HXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-side; MOSFET gate driver Technology: EiceDRIVER™ Case: PG-DSO-16 Output current: -2...1A Number of channels: 2 Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Supply voltage: 3...3.5V; 4.5...20V Voltage class: 650V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLTS2242TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.9A Power dissipation: 2W Technology: HEXFET® Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 2279 шт: термін постачання 21-30 дні (днів) |
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FF300R12KT4HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.6kW Topology: IGBT half-bridge |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IRS21844STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-off time: 290ns Turn-on time: 720ns Power: 1W |
на замовлення 2439 шт: термін постачання 21-30 дні (днів) |
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BCX55H6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89 Type of transistor: NPN Case: SOT89 Mounting: SMD Power dissipation: 2W Collector current: 1A Collector-emitter voltage: 60V Frequency: 100MHz Polarisation: bipolar |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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XC822MT1FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-16 Mounting: SMD Number of 16bit timers: 3 Number of PWM channels: 1 Memory: 500B SRAM; 4kB FLASH Operating temperature: -40...85°C Integrated circuit features: LEDTSCU; MDU; RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 Kind of core: 8-bit |
на замовлення 372 шт: термін постачання 21-30 дні (днів) |
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IRFH5110TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRLHS6276TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2 Case: PQFN2X2 Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET x2 Kind of package: reel Polarisation: unipolar Power dissipation: 4.5W Drain current: 12A Drain-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ITS4142N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223 Operating temperature: -30...85°C Kind of integrated circuit: high-side Technology: Industrial PROFET Kind of package: reel; tape Kind of output: N-Channel Mounting: SMD Turn-off time: 0.1ms Turn-on time: 150µs On-state resistance: 0.2Ω Power dissipation: 1.4W Output current: 0.7A Number of channels: 1 Supply voltage: 12...45V DC Case: SOT223 Type of integrated circuit: power switch |
на замовлення 3305 шт: термін постачання 21-30 дні (днів) |
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IRF250P224 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 68A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Kind of channel: enhancement Gate charge: 203nC Kind of package: tube Technology: StrongIRFET™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP60R190P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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IPA60R120P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP Type of transistor: N-MOSFET Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar On-state resistance: 0.12Ω Drain current: 16A Gate-source voltage: ±20V Power dissipation: 28W Technology: CoolMOS™ P7 Drain-source voltage: 600V Case: TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP023N10N5AKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCX42E6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 125V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz |
на замовлення 1268 шт: термін постачання 21-30 дні (днів) |
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BTS5012SDA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Case: TO252-5 On-state resistance: 12mΩ Mounting: SMD Number of channels: 1 Supply voltage: 5.5...20V DC Output current: 6A Technology: High Current PROFET Kind of integrated circuit: high-side Kind of output: N-Channel Type of integrated circuit: power switch |
на замовлення 1007 шт: термін постачання 21-30 дні (днів) |
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FD300R12KE3HOSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.47kW Topology: boost chopper Application: Inverter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPW60R190C6FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 175 шт: термін постачання 21-30 дні (днів) |
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BSB013NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ Mounting: SMD Polarisation: unipolar On-state resistance: 1.3mΩ Gate-source voltage: ±20V Drain-source voltage: 25V Power dissipation: 57W Drain current: 103A Case: CanPAK™ MX; MG-WDSON-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
S25FL064LABMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 64Mb FLASH Operating frequency: 108MHz Application: automotive Case: SOIC8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25FL128LAGMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 128Mb FLASH Operating frequency: 133MHz Application: automotive Case: SOIC8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25FL128SAGMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 128Mb FLASH Operating frequency: 133MHz Application: automotive Case: SOIC16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25FL256SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 256Mb FLASH Operating frequency: 133MHz Application: automotive Case: SOIC16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25FL512SAGMFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Application: automotive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25FL512SDSMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 512Mb FLASH Operating frequency: 80MHz Application: automotive Case: SOIC16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25FS512SAGMFB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 1.7...2V Memory: 512Mb FLASH Operating frequency: 133MHz Application: automotive Case: SOIC16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S25FS512SDSNFB013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8 Operating temperature: -40...105°C Interface: QUAD SPI Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 1.7...2V Memory: 512Mb FLASH Operating frequency: 80MHz Application: automotive Case: WSON8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S28HL512TFPBHB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24 Operating temperature: -40...105°C Interface: octal Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 2.7...3.6V Memory: 512Mb FLASH Operating frequency: 166MHz Application: automotive Case: BGA24 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S28HS512TGABHB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial Operating temperature: -40...105°C Interface: octal Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: serial Kind of package: reel; tape Mounting: SMD Operating voltage: 1.7...2V Memory: 512Mb FLASH Operating frequency: 200MHz Application: automotive Case: BGA24 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S29GL128S10DHB013 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel Operating temperature: -40...105°C Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: parallel Kind of package: reel; tape Mounting: SMD Access time: 100ns Operating voltage: 2.7...3.6V Memory: 128Mb FLASH Application: automotive Case: BGA64 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
S70GL02GS11FHB013 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Operating temperature: -40...105°C Interface: CFI; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Kind of interface: parallel Kind of package: reel; tape Mounting: SMD Access time: 110ns Operating voltage: 2.7...3.6V Memory: 2Gb FLASH Application: automotive Case: BGA64 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLD1120ELXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA Type of integrated circuit: driver Kind of integrated circuit: high-side; LED driver Output current: 0.36A Case: PG-SSOP-14-EP Mounting: SMD Number of channels: 1 Integrated circuit features: linear dimming; PWM Operating voltage: 5.5...40V DC Protection: overheating OTP Technology: Litix™ |
на замовлення 2275 шт: термін постачання 21-30 дні (днів) |
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BTS723GW | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14 Technology: Classic PROFET Type of integrated circuit: power switch Kind of output: N-Channel Mounting: SMD Output current: 2.9...4.2A On-state resistance: 53mΩ Number of channels: 2 Supply voltage: 7...58V DC Kind of integrated circuit: high-side Case: SO14 |
на замовлення 219 шт: термін постачання 21-30 дні (днів) |
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IRS4427PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -3.3...2.3A Power: 1W Number of channels: 2 Supply voltage: 6...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Turn-on time: 50ns Turn-off time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. |
S29AL008J70BFI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
S29AL008J70BFI013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
S29AL008J70BFI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
S29AL008J70BFI022 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
S29AL008J70BFI023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
S29AL008J70BFM023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Application: automotive
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Application: automotive
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
S29AL008J70BFN010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
S29AL008J70BFN020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; VFBGA48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: VFBGA48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
S29AL008J70TFI013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
S29AL008J70TFI023 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
S29AL008J70TFN010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
S29AL008J70TFN020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...125°C
Access time: 70ns
Operating voltage: 2.7...3.6V
Memory: 8Mb FLASH
Interface: CFI; parallel
товару немає в наявності
В кошику
од. на суму грн.
SPD30P06PGBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
на замовлення 1075 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 127.04 грн |
5+ | 87.88 грн |
10+ | 76.80 грн |
16+ | 60.17 грн |
43+ | 57.00 грн |
50+ | 56.21 грн |
100+ | 54.63 грн |
BAS7007E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. off-state voltage: 70V
Semiconductor structure: double independent
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Case: SOT143
Mounting: SMD
Type of diode: Schottky switching
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. off-state voltage: 70V
Semiconductor structure: double independent
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.32 грн |
27+ | 15.12 грн |
100+ | 10.13 грн |
149+ | 6.25 грн |
411+ | 5.94 грн |
IRLR3410TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Pulsed drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Pulsed drain current: 60A
товару немає в наявності
В кошику
од. на суму грн.
FF300R12KS4 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
на замовлення 5 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 15628.46 грн |
BSC120N03LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 33A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 33A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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BSC120N03MSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12mΩ
Drain current: 36A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 30V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
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CY7C1520KV18-333BZXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
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IRS21531DSTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Voltage class: 600V
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Voltage class: 600V
Kind of package: reel; tape
на замовлення 1923 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 81.85 грн |
10+ | 54.63 грн |
18+ | 53.04 грн |
25+ | 49.88 грн |
50+ | 48.29 грн |
BCR400WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Case: SOT343
Mounting: SMD
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Kind of package: reel; tape
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 330mW; 1.6÷18VDC; active bias controller
Case: SOT343
Mounting: SMD
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Kind of package: reel; tape
на замовлення 2877 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.49 грн |
37+ | 10.93 грн |
42+ | 9.50 грн |
51+ | 7.84 грн |
59+ | 6.81 грн |
100+ | 6.57 грн |
357+ | 6.49 грн |
BSS606NH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 710 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.07 грн |
14+ | 28.50 грн |
50+ | 22.09 грн |
75+ | 12.43 грн |
206+ | 11.72 грн |
IRLS3036TRL7PP |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
на замовлення 373 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 184.17 грн |
5+ | 157.55 грн |
1EDF5673FXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
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IRFH7110TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRFTS9342TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Kind of package: reel
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2W
Case: TSOP6
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Kind of package: reel
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -5.8A
Power dissipation: 2W
Case: TSOP6
Polarisation: unipolar
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IRFTS8342TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.2A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.2A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
на замовлення 1930 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.28 грн |
20+ | 20.27 грн |
23+ | 17.89 грн |
98+ | 9.58 грн |
268+ | 9.03 грн |
2EDS8165HXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Voltage class: 650V
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IRLTS2242TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Technology: HEXFET®
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2279 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.22 грн |
16+ | 26.36 грн |
50+ | 18.13 грн |
100+ | 15.36 грн |
114+ | 8.15 грн |
314+ | 7.76 грн |
FF300R12KT4HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Topology: IGBT half-bridge
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IRS21844STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 290ns
Turn-on time: 720ns
Power: 1W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 290ns
Turn-on time: 720ns
Power: 1W
на замовлення 2439 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 121.07 грн |
10+ | 98.17 грн |
27+ | 92.63 грн |
500+ | 91.84 грн |
1000+ | 89.46 грн |
BCX55H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Case: SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 60V
Frequency: 100MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT89
Type of transistor: NPN
Case: SOT89
Mounting: SMD
Power dissipation: 2W
Collector current: 1A
Collector-emitter voltage: 60V
Frequency: 100MHz
Polarisation: bipolar
на замовлення 21 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.46 грн |
XC822MT1FRIAAFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; -40÷85°C
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-16
Mounting: SMD
Number of 16bit timers: 3
Number of PWM channels: 1
Memory: 500B SRAM; 4kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
на замовлення 372 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 87.82 грн |
6+ | 77.59 грн |
17+ | 57.80 грн |
45+ | 54.63 грн |
IRFH5110TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRLHS6276TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
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ITS4142N |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of package: reel; tape
Kind of output: N-Channel
Mounting: SMD
Turn-off time: 0.1ms
Turn-on time: 150µs
On-state resistance: 0.2Ω
Power dissipation: 1.4W
Output current: 0.7A
Number of channels: 1
Supply voltage: 12...45V DC
Case: SOT223
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 700mA; Ch: 1; N-Channel; SMD; SOT223
Operating temperature: -30...85°C
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of package: reel; tape
Kind of output: N-Channel
Mounting: SMD
Turn-off time: 0.1ms
Turn-on time: 150µs
On-state resistance: 0.2Ω
Power dissipation: 1.4W
Output current: 0.7A
Number of channels: 1
Supply voltage: 12...45V DC
Case: SOT223
Type of integrated circuit: power switch
на замовлення 3305 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 219.12 грн |
10+ | 133.01 грн |
12+ | 83.13 грн |
31+ | 78.38 грн |
1000+ | 77.59 грн |
2000+ | 75.21 грн |
IRF250P224 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
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IPP60R190P6XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 41 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 157.73 грн |
8+ | 121.92 грн |
10+ | 117.17 грн |
21+ | 115.59 грн |
25+ | 114.01 грн |
IPA60R120P7 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 0.12Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™ P7
Drain-source voltage: 600V
Case: TO220FP
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IPP023N10N5AKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 5
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BCX42E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.90 грн |
31+ | 13.14 грн |
50+ | 10.13 грн |
100+ | 9.03 грн |
149+ | 6.25 грн |
411+ | 5.86 грн |
BTS5012SDA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Case: TO252-5
On-state resistance: 12mΩ
Mounting: SMD
Number of channels: 1
Supply voltage: 5.5...20V DC
Output current: 6A
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Case: TO252-5
On-state resistance: 12mΩ
Mounting: SMD
Number of channels: 1
Supply voltage: 5.5...20V DC
Output current: 6A
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
на замовлення 1007 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 167.11 грн |
7+ | 133.01 грн |
10+ | 120.34 грн |
FD300R12KE3HOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.47kW
Topology: boost chopper
Application: Inverter
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.47kW
Topology: boost chopper
Application: Inverter
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IPW60R190C6FKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 175 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 242.14 грн |
3+ | 198.72 грн |
6+ | 171.80 грн |
15+ | 163.09 грн |
120+ | 159.93 грн |
BSB013NE2LXIXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 103A
Case: CanPAK™ MX; MG-WDSON-2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 103A
Case: CanPAK™ MX; MG-WDSON-2
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S25FL064LABMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Operating frequency: 108MHz
Application: automotive
Case: SOIC8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Operating frequency: 108MHz
Application: automotive
Case: SOIC8
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S25FL128LAGMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC8
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S25FL128SAGMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
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S25FL256SAGMFB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
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S25FL512SAGMFB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
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S25FL512SDSMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: SOIC16
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: SOIC16
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S25FS512SAGMFB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
Case: SOIC16
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S25FS512SDSNFB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: WSON8
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Case: WSON8
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S28HL512TFPBHB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 166MHz
Application: automotive
Case: BGA24
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 166MHz
Application: automotive
Case: BGA24
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S28HS512TGABHB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 200MHz
Application: automotive
Case: BGA24
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 200MHz
Application: automotive
Case: BGA24
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S29GL128S10DHB013 |
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 100ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Application: automotive
Case: BGA64
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 100ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Application: automotive
Case: BGA64
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S70GL02GS11FHB013 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
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TLD1120ELXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
на замовлення 2275 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 60.54 грн |
9+ | 46.55 грн |
10+ | 41.88 грн |
25+ | 38.40 грн |
BTS723GW |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Technology: Classic PROFET
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 2.9...4.2A
On-state resistance: 53mΩ
Number of channels: 2
Supply voltage: 7...58V DC
Kind of integrated circuit: high-side
Case: SO14
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷4.2A; Ch: 2; N-Channel; SMD; SO14
Technology: Classic PROFET
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Output current: 2.9...4.2A
On-state resistance: 53mΩ
Number of channels: 2
Supply voltage: 7...58V DC
Kind of integrated circuit: high-side
Case: SO14
на замовлення 219 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 456.15 грн |
4+ | 294.52 грн |
9+ | 277.89 грн |
100+ | 273.93 грн |
IRS4427PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -3.3...2.3A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 50ns
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