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S25FL064LABNFV011 S25FL064LABNFV011 Infineon Technologies Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8WSON
товару немає в наявності
В кошику  од. на суму  грн.
2EDN7424FXTMA1 2EDN7424FXTMA1 Infineon Technologies Infineon-2EDN7424F-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e4ef0083f67 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-60
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4961 шт:
термін постачання 21-31 дні (днів)
4+91.97 грн
10+78.97 грн
25+74.95 грн
100+57.78 грн
250+54.01 грн
500+47.73 грн
1000+37.06 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC13DN30NSFDATMA1 BSC13DN30NSFDATMA1 Infineon Technologies Infineon-BSC13DN30NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d5c940fc0d9a Description: MOSFET N-CH 300V 16A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 150 V
на замовлення 4825 шт:
термін постачання 21-31 дні (днів)
2+302.32 грн
10+191.65 грн
100+135.06 грн
500+104.08 грн
1000+96.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC350N20NSFDATMA1 BSC350N20NSFDATMA1 Infineon Technologies Infineon-BSC350N20NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d6094ce00ea0 Description: MOSFET N-CH 200V 35A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 100 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
2+281.03 грн
10+177.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC670N25NSFDATMA1 BSC670N25NSFDATMA1 Infineon Technologies Infineon-BSC670N25NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d61b96e90ee7 Description: MOSFET N-CH 250V 24A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 125 V
на замовлення 3765 шт:
термін постачання 21-31 дні (днів)
2+293.80 грн
10+185.74 грн
100+130.82 грн
500+100.74 грн
1000+93.67 грн
2000+93.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CDM10VDXTSA1 CDM10VDXTSA1 Infineon Technologies Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 9043 шт:
термін постачання 21-31 дні (днів)
9+39.17 грн
13+26.16 грн
25+23.39 грн
100+19.09 грн
250+17.72 грн
500+16.90 грн
1000+15.96 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CDM10VD2XTSA1 CDM10VD2XTSA1 Infineon Technologies Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 2608 шт:
термін постачання 21-31 дні (днів)
9+38.32 грн
13+26.16 грн
25+23.36 грн
100+19.06 грн
250+17.70 грн
500+16.88 грн
1000+15.94 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CDM10V2XTSA1 CDM10V2XTSA1 Infineon Technologies Infineon-CDM10V-2-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015ba5215cb66632 Description: IC DIMMER 0-10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+16.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CDM10V2XTSA1 CDM10V2XTSA1 Infineon Technologies Infineon-CDM10V-2-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015ba5215cb66632 Description: IC DIMMER 0-10V SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 7005 шт:
термін постачання 21-31 дні (днів)
10+35.77 грн
14+24.60 грн
25+22.01 грн
100+17.95 грн
250+16.67 грн
500+15.89 грн
1000+15.00 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ICE5QR1680AGXUMA1 ICE5QR1680AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC CTLR QUASI-RES FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 50 W
товару немає в наявності
В кошику  од. на суму  грн.
ICE5QR4770AGXUMA1 ICE5QR4770AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
товару немає в наявності
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TC233LP32F200FABKXUMA1 TC233LP32F200FABKXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-3
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
1+1123.26 грн
10+855.98 грн
25+799.52 грн
100+692.09 грн
250+664.33 грн
500+647.60 грн
В кошику  од. на суму  грн.
TC233LP32F200NACKXUMA1 TC233LP32F200NACKXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 1974 шт:
термін постачання 21-31 дні (днів)
1+1270.59 грн
10+971.93 грн
25+909.25 грн
100+788.55 грн
250+757.70 грн
500+739.11 грн
В кошику  од. на суму  грн.
IPD180N10N3GATMA1 IPD180N10N3GATMA1 Infineon Technologies IPD180N10N3_G.pdf Description: MOSFET N-CH 100V 43A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 1724 шт:
термін постачання 21-31 дні (днів)
3+124.33 грн
10+76.10 грн
100+50.96 грн
500+37.70 грн
1000+34.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE9879EVALKITTOBO1 TLE9879EVALKITTOBO1 Infineon Technologies Infineon-TLE9879-EvalKit-UM-v01_00-EN.pdf?fileId=5546d4624e765da5014eb587aeb53373 Description: EV KIT TLE9879 MOTOR DRIVER
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: TLE9879
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+6706.34 грн
В кошику  од. на суму  грн.
FF11MR12W1M1B11BOMA1 FF11MR12W1M1B11BOMA1 Infineon Technologies Infineon-FF11MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c0c327a620aea Description: MOSFET 2N-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A
Input Capacitance (Ciss) (Max) @ Vds: 7950pF @ 800V
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: Module
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
FF23MR12W1M1B11BOMA1 FF23MR12W1M1B11BOMA1 Infineon Technologies Infineon-FF23MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c626bf32e23af Description: MOSFET 2N-CH 1200V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Supplier Device Package: Module
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+7034.21 грн
24+5550.29 грн
В кошику  од. на суму  грн.
IPD80R900P7ATMA1 IPD80R900P7ATMA1 Infineon Technologies Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9 Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R360P7ATMA1 IPD80R360P7ATMA1 Infineon Technologies Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94 Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 Infineon Technologies Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+30.15 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 Infineon Technologies INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+25.21 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R600P7ATMA1 IPD80R600P7ATMA1 Infineon Technologies Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056 Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+52.96 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 Infineon Technologies infineon-ipd80r1k2p7-datasheet-en.pdf Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Infineon Technologies Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0 Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+39.20 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R2K4P7ATMA1 IPD80R2K4P7ATMA1 Infineon Technologies Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+25.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPA80R900P7XKSA1 IPA80R900P7XKSA1 Infineon Technologies infineon-ipa80r900p7-datasheet-en.pdf Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
3+139.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP80R900P7XKSA1 IPP80R900P7XKSA1 Infineon Technologies infineon-ipp80r900p7-ds-en.pdf Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R900P7AKMA1 IPU80R900P7AKMA1 Infineon Technologies Infineon-IPU80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b56a1e55e0153 Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 1435 шт:
термін постачання 21-31 дні (днів)
3+144.77 грн
75+62.36 грн
150+55.93 грн
525+43.92 грн
1050+40.20 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP80R360P7XKSA1 IPP80R360P7XKSA1 Infineon Technologies infineon-ipp80r360p7-ds-en.pdf Description: MOSFET N-CH 800V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW80R360P7XKSA1 IPW80R360P7XKSA1 Infineon Technologies Infineon-IPW80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b56d7ed84018a Description: MOSFET N-CH 800V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
2+300.61 грн
30+158.41 грн
120+129.53 грн
510+101.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPS80R900P7AKMA1 IPS80R900P7AKMA1 Infineon Technologies Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039 Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R2K0P7AKMA1 IPU80R2K0P7AKMA1 Infineon Technologies Infineon-IPU80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b479bed537056 Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R2K0P7AKMA1 IPS80R2K0P7AKMA1 Infineon Technologies infineon-ips80r2k0p7-datasheet-en.pdf Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R3K3P7AKMA1 IPU80R3K3P7AKMA1 Infineon Technologies Infineon-IPU80R3K3P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c1098872e3e4f Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA80R1K2P7XKSA1 IPA80R1K2P7XKSA1 Infineon Technologies infineon-ipa80r1k2p7-datasheet-en.pdf Description: MOSFET N-CH 800V 4.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
3+132.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 Infineon Technologies infineon-ipp80r1k2p7-ds-en.pdf Description: MOSFET N-CH 800V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP80R750P7XKSA1 IPP80R750P7XKSA1 Infineon Technologies infineon-ipp80r750p7-ds-en.pdf Description: MOSFET N-CH 800V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP80R600P7XKSA1 IPP80R600P7XKSA1 Infineon Technologies infineon-ipp80r600p7-ds-en.pdf?fileId=5546d4625bd71aa0015c108f62163d06 Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R2K4P7AKMA1 IPU80R2K4P7AKMA1 Infineon Technologies Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 Infineon Technologies infineon-ipu80r1k2p7-datasheet-en.pdf Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R600P7AKMA1 IPU80R600P7AKMA1 Infineon Technologies Infineon-IPU80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c14dce5015c165a8de60455 Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 1456 шт:
термін постачання 21-31 дні (днів)
3+124.33 грн
10+99.31 грн
100+79.05 грн
500+62.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPS80R2K4P7AKMA1 IPS80R2K4P7AKMA1 Infineon Technologies Infineon-IPS80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ced92d89f1179 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R1K2P7AKMA1 IPS80R1K2P7AKMA1 Infineon Technologies infineon-ips80r1k2p7-datasheet-en.pdf Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3-342
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
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IPS80R750P7AKMA1 IPS80R750P7AKMA1 Infineon Technologies Infineon-IPS80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedb79d591183 Description: MOSFET N-CH 800V 7A TO251-3
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R600P7AKMA1 IPS80R600P7AKMA1 Infineon Technologies Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394 Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R900P7ATMA1 IPD80R900P7ATMA1 Infineon Technologies Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9 Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 2037 шт:
термін постачання 21-31 дні (днів)
3+127.74 грн
10+78.07 грн
100+52.30 грн
500+38.73 грн
1000+35.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R360P7ATMA1 IPD80R360P7ATMA1 Infineon Technologies Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94 Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 Infineon Technologies Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2567 шт:
термін постачання 21-31 дні (днів)
4+112.41 грн
10+68.72 грн
100+45.59 грн
500+33.48 грн
1000+30.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 Infineon Technologies INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 4993 шт:
термін постачання 21-31 дні (днів)
4+99.64 грн
10+60.44 грн
100+39.83 грн
500+29.06 грн
1000+26.38 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD80R600P7ATMA1 IPD80R600P7ATMA1 Infineon Technologies Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056 Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 4150 шт:
термін постачання 21-31 дні (днів)
2+182.24 грн
10+112.59 грн
100+76.67 грн
500+57.52 грн
1000+52.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 Infineon Technologies infineon-ipd80r1k2p7-datasheet-en.pdf Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 1784 шт:
термін постачання 21-31 дні (днів)
3+115.82 грн
10+70.36 грн
100+46.91 грн
500+34.59 грн
1000+31.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Infineon Technologies Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0 Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 3790 шт:
термін постачання 21-31 дні (днів)
3+139.66 грн
10+85.78 грн
100+57.76 грн
500+42.96 грн
1000+39.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R2K4P7ATMA1 IPD80R2K4P7ATMA1 Infineon Technologies Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2583 шт:
термін постачання 21-31 дні (днів)
5+83.46 грн
10+55.35 грн
100+37.03 грн
500+27.01 грн
1000+24.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
V6114100NSHPSA1 Infineon Technologies Description: CLAMP FOR DISK DEVICES
товару немає в наявності
В кошику  од. на суму  грн.
V501445S3HPSA1 Infineon Technologies Description: CLAMP DISK DEVICES 42MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V501460MHPSA1 V501460MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa Description: CLAMP DISK DEVICES 42MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 1.929" (49.00mm)
Shape: Rectangular
Type: Mount
Width: 1.811" (46.00mm)
Height: 1.929" (49.00mm)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+5687.83 грн
5+5164.23 грн
В кошику  од. на суму  грн.
V501460NHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..N-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d79a2a809b7 Description: CLAMP DISK DEVICES 42MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V7214150MHPSA1 Infineon Technologies Infineon-CLAMP_V72_14_150M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e1a7d9c1d79 Description: CLAMP DISK DEVICES 58MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V8926120NHPSA1 Infineon Technologies Description: CLAMP DISK DEVICES 75MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V8926170NHPSA1 Infineon Technologies V89.pdf Description: CLAMP DISK DEVICES 75MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
S25FL064LABNFV011 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064LABNFV011
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
товару немає в наявності
В кошику  од. на суму  грн.
2EDN7424FXTMA1 Infineon-2EDN7424F-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e4ef0083f67
2EDN7424FXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-60
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4961 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.97 грн
10+78.97 грн
25+74.95 грн
100+57.78 грн
250+54.01 грн
500+47.73 грн
1000+37.06 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC13DN30NSFDATMA1 Infineon-BSC13DN30NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d5c940fc0d9a
BSC13DN30NSFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 300V 16A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 150 V
на замовлення 4825 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+302.32 грн
10+191.65 грн
100+135.06 грн
500+104.08 грн
1000+96.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC350N20NSFDATMA1 Infineon-BSC350N20NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d6094ce00ea0
BSC350N20NSFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 35A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 100 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+281.03 грн
10+177.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC670N25NSFDATMA1 Infineon-BSC670N25NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d61b96e90ee7
BSC670N25NSFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 24A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 125 V
на замовлення 3765 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+293.80 грн
10+185.74 грн
100+130.82 грн
500+100.74 грн
1000+93.67 грн
2000+93.47 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CDM10VDXTSA1 Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a
CDM10VDXTSA1
Виробник: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 9043 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.17 грн
13+26.16 грн
25+23.39 грн
100+19.09 грн
250+17.72 грн
500+16.90 грн
1000+15.96 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CDM10VD2XTSA1 Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a
CDM10VD2XTSA1
Виробник: Infineon Technologies
Description: IC DIMMER FLEXIBLE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 2608 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.32 грн
13+26.16 грн
25+23.36 грн
100+19.06 грн
250+17.70 грн
500+16.88 грн
1000+15.94 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CDM10V2XTSA1 Infineon-CDM10V-2-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015ba5215cb66632
CDM10V2XTSA1
Виробник: Infineon Technologies
Description: IC DIMMER 0-10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+16.00 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CDM10V2XTSA1 Infineon-CDM10V-2-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015ba5215cb66632
CDM10V2XTSA1
Виробник: Infineon Technologies
Description: IC DIMMER 0-10V SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 25V
Applications: Dimming Controller
Supplier Device Package: SOT-23-6
Part Status: Active
на замовлення 7005 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.77 грн
14+24.60 грн
25+22.01 грн
100+17.95 грн
250+16.67 грн
500+15.89 грн
1000+15.00 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ICE5QR1680AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR1680AGXUMA1
Виробник: Infineon Technologies
Description: IC CTLR QUASI-RES FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 50 W
товару немає в наявності
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ICE5QR4770AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR4770AGXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
товару немає в наявності
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TC233LP32F200FABKXUMA1 Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC233LP32F200FABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-3
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1123.26 грн
10+855.98 грн
25+799.52 грн
100+692.09 грн
250+664.33 грн
500+647.60 грн
В кошику  од. на суму  грн.
TC233LP32F200NACKXUMA1 Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC233LP32F200NACKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
на замовлення 1974 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1270.59 грн
10+971.93 грн
25+909.25 грн
100+788.55 грн
250+757.70 грн
500+739.11 грн
В кошику  од. на суму  грн.
IPD180N10N3GATMA1 IPD180N10N3_G.pdf
IPD180N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 43A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 1724 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.33 грн
10+76.10 грн
100+50.96 грн
500+37.70 грн
1000+34.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE9879EVALKITTOBO1 Infineon-TLE9879-EvalKit-UM-v01_00-EN.pdf?fileId=5546d4624e765da5014eb587aeb53373
TLE9879EVALKITTOBO1
Виробник: Infineon Technologies
Description: EV KIT TLE9879 MOTOR DRIVER
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: TLE9879
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6706.34 грн
В кошику  од. на суму  грн.
FF11MR12W1M1B11BOMA1 Infineon-FF11MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c0c327a620aea
FF11MR12W1M1B11BOMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A
Input Capacitance (Ciss) (Max) @ Vds: 7950pF @ 800V
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: Module
Part Status: Obsolete
товару немає в наявності
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FF23MR12W1M1B11BOMA1 Infineon-FF23MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c626bf32e23af
FF23MR12W1M1B11BOMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 50A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Supplier Device Package: Module
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7034.21 грн
24+5550.29 грн
В кошику  од. на суму  грн.
IPD80R900P7ATMA1 Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9
IPD80R900P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
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IPD80R360P7ATMA1 Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94
IPD80R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
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IPD80R2K0P7ATMA1 Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a
IPD80R2K0P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+30.15 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R3K3P7ATMA1 INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw
IPD80R3K3P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+25.21 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R600P7ATMA1 Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056
IPD80R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+52.96 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R1K2P7ATMA1 infineon-ipd80r1k2p7-datasheet-en.pdf
IPD80R1K2P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
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IPD80R750P7ATMA1 Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0
IPD80R750P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+39.20 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R2K4P7ATMA1 Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed
IPD80R2K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+25.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPA80R900P7XKSA1 infineon-ipa80r900p7-datasheet-en.pdf
IPA80R900P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+139.66 грн
Мінімальне замовлення: 3
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IPP80R900P7XKSA1 infineon-ipp80r900p7-ds-en.pdf
IPP80R900P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
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IPU80R900P7AKMA1 Infineon-IPU80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b56a1e55e0153
IPU80R900P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 1435 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.77 грн
75+62.36 грн
150+55.93 грн
525+43.92 грн
1050+40.20 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP80R360P7XKSA1 infineon-ipp80r360p7-ds-en.pdf
IPP80R360P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
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IPW80R360P7XKSA1 Infineon-IPW80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b56d7ed84018a
IPW80R360P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+300.61 грн
30+158.41 грн
120+129.53 грн
510+101.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPS80R900P7AKMA1 Infineon-IPS80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4764f6817039
IPS80R900P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R2K0P7AKMA1 Infineon-IPU80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b479bed537056
IPU80R2K0P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R2K0P7AKMA1 infineon-ips80r2k0p7-datasheet-en.pdf
IPS80R2K0P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товару немає в наявності
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IPU80R3K3P7AKMA1 Infineon-IPU80R3K3P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c1098872e3e4f
IPU80R3K3P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
товару немає в наявності
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IPA80R1K2P7XKSA1 infineon-ipa80r1k2p7-datasheet-en.pdf
IPA80R1K2P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.00 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP80R1K2P7XKSA1 infineon-ipp80r1k2p7-ds-en.pdf
IPP80R1K2P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
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IPP80R750P7XKSA1 infineon-ipp80r750p7-ds-en.pdf
IPP80R750P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
товару немає в наявності
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IPP80R600P7XKSA1 infineon-ipp80r600p7-ds-en.pdf?fileId=5546d4625bd71aa0015c108f62163d06
IPP80R600P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товару немає в наявності
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IPU80R2K4P7AKMA1 Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185
IPU80R2K4P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
товару немає в наявності
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IPU80R1K2P7AKMA1 infineon-ipu80r1k2p7-datasheet-en.pdf
IPU80R1K2P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
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IPU80R600P7AKMA1 Infineon-IPU80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c14dce5015c165a8de60455
IPU80R600P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 1456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.33 грн
10+99.31 грн
100+79.05 грн
500+62.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPS80R2K4P7AKMA1 Infineon-IPS80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ced92d89f1179
IPS80R2K4P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
товару немає в наявності
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IPS80R1K2P7AKMA1 infineon-ips80r1k2p7-datasheet-en.pdf
IPS80R1K2P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3-342
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
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IPS80R750P7AKMA1 Infineon-IPS80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedb79d591183
IPS80R750P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO251-3
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R600P7AKMA1 Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394
IPS80R600P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R900P7ATMA1 Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9
IPD80R900P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 2037 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.74 грн
10+78.07 грн
100+52.30 грн
500+38.73 грн
1000+35.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R360P7ATMA1 Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94
IPD80R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R2K0P7ATMA1 Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a
IPD80R2K0P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2567 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+112.41 грн
10+68.72 грн
100+45.59 грн
500+33.48 грн
1000+30.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD80R3K3P7ATMA1 INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw
IPD80R3K3P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 4993 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.64 грн
10+60.44 грн
100+39.83 грн
500+29.06 грн
1000+26.38 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD80R600P7ATMA1 Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056
IPD80R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 4150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+182.24 грн
10+112.59 грн
100+76.67 грн
500+57.52 грн
1000+52.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD80R1K2P7ATMA1 infineon-ipd80r1k2p7-datasheet-en.pdf
IPD80R1K2P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 1784 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.82 грн
10+70.36 грн
100+46.91 грн
500+34.59 грн
1000+31.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R750P7ATMA1 Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0
IPD80R750P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 3790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+139.66 грн
10+85.78 грн
100+57.76 грн
500+42.96 грн
1000+39.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R2K4P7ATMA1 Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed
IPD80R2K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2583 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+83.46 грн
10+55.35 грн
100+37.03 грн
500+27.01 грн
1000+24.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
V6114100NSHPSA1
Виробник: Infineon Technologies
Description: CLAMP FOR DISK DEVICES
товару немає в наявності
В кошику  од. на суму  грн.
V501445S3HPSA1
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V501460MHPSA1 Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa
V501460MHPSA1
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 1.929" (49.00mm)
Shape: Rectangular
Type: Mount
Width: 1.811" (46.00mm)
Height: 1.929" (49.00mm)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5687.83 грн
5+5164.23 грн
В кошику  од. на суму  грн.
V501460NHPSA1 Infineon-Clamp_for_disc_devices_V50..N-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d79a2a809b7
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V7214150MHPSA1 Infineon-CLAMP_V72_14_150M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e1a7d9c1d79
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 58MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V8926120NHPSA1
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V8926170NHPSA1 V89.pdf
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
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