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IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 Infineon Technologies Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+30.30 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 Infineon Technologies INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+25.33 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R600P7ATMA1 IPD80R600P7ATMA1 Infineon Technologies Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056 Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+53.21 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 Infineon Technologies infineon-ipd80r1k2p7-datasheet-en.pdf Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Infineon Technologies Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0 Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+39.39 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R2K4P7ATMA1 IPD80R2K4P7ATMA1 Infineon Technologies Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+25.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPA80R900P7XKSA1 IPA80R900P7XKSA1 Infineon Technologies infineon-ipa80r900p7-datasheet-en.pdf Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
3+135.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP80R900P7XKSA1 IPP80R900P7XKSA1 Infineon Technologies infineon-ipp80r900p7-ds-en.pdf Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R900P7AKMA1 IPU80R900P7AKMA1 Infineon Technologies infineon-ipu80r900p7-datasheet-en.pdf Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 1328 шт:
термін постачання 21-31 дні (днів)
3+120.65 грн
75+51.61 грн
150+46.25 грн
525+36.23 грн
1050+33.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP80R360P7XKSA1 IPP80R360P7XKSA1 Infineon Technologies infineon-ipp80r360p7-ds-en.pdf Description: MOSFET N-CH 800V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPW80R360P7XKSA1 IPW80R360P7XKSA1 Infineon Technologies Infineon-IPW80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b56d7ed84018a Description: MOSFET N-CH 800V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
2+302.05 грн
30+159.16 грн
120+130.15 грн
510+102.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPS80R900P7AKMA1 IPS80R900P7AKMA1 Infineon Technologies infineon-ips80r900p7-datasheet-en.pdf Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R2K0P7AKMA1 IPU80R2K0P7AKMA1 Infineon Technologies Infineon-IPU80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b479bed537056 Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R2K0P7AKMA1 IPS80R2K0P7AKMA1 Infineon Technologies infineon-ips80r2k0p7-datasheet-en.pdf Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R3K3P7AKMA1 IPU80R3K3P7AKMA1 Infineon Technologies Infineon-IPU80R3K3P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c1098872e3e4f Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPA80R1K2P7XKSA1 IPA80R1K2P7XKSA1 Infineon Technologies infineon-ipa80r1k2p7-datasheet-en.pdf Description: MOSFET N-CH 800V 4.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
3+132.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 Infineon Technologies infineon-ipp80r1k2p7-ds-en.pdf Description: MOSFET N-CH 800V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP80R750P7XKSA1 IPP80R750P7XKSA1 Infineon Technologies infineon-ipp80r750p7-ds-en.pdf Description: MOSFET N-CH 800V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP80R600P7XKSA1 IPP80R600P7XKSA1 Infineon Technologies infineon-ipp80r600p7-ds-en.pdf?fileId=5546d4625bd71aa0015c108f62163d06 Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товару немає в наявності
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IPU80R2K4P7AKMA1 IPU80R2K4P7AKMA1 Infineon Technologies Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 Infineon Technologies infineon-ipu80r1k2p7-datasheet-en.pdf Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
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IPU80R600P7AKMA1 IPU80R600P7AKMA1 Infineon Technologies Infineon-IPU80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c14dce5015c165a8de60455 Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 1456 шт:
термін постачання 21-31 дні (днів)
3+124.93 грн
10+99.78 грн
100+79.42 грн
500+63.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPS80R2K4P7AKMA1 IPS80R2K4P7AKMA1 Infineon Technologies Infineon-IPS80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ced92d89f1179 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R1K2P7AKMA1 IPS80R1K2P7AKMA1 Infineon Technologies infineon-ips80r1k2p7-datasheet-en.pdf Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3-342
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R750P7AKMA1 IPS80R750P7AKMA1 Infineon Technologies Infineon-IPS80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedb79d591183 Description: MOSFET N-CH 800V 7A TO251-3
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R600P7AKMA1 IPS80R600P7AKMA1 Infineon Technologies Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394 Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R900P7ATMA1 IPD80R900P7ATMA1 Infineon Technologies Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9 Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 4413 шт:
термін постачання 21-31 дні (днів)
3+124.07 грн
10+75.81 грн
100+50.80 грн
500+37.60 грн
1000+34.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R360P7ATMA1 IPD80R360P7ATMA1 Infineon Technologies Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94 Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 Infineon Technologies Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2567 шт:
термін постачання 21-31 дні (днів)
4+112.95 грн
10+69.05 грн
100+45.80 грн
500+33.64 грн
1000+30.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD80R3K3P7ATMA1 IPD80R3K3P7ATMA1 Infineon Technologies INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 4993 шт:
термін постачання 21-31 дні (днів)
4+100.11 грн
10+60.73 грн
100+40.02 грн
500+29.20 грн
1000+26.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD80R600P7ATMA1 IPD80R600P7ATMA1 Infineon Technologies Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056 Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 4150 шт:
термін постачання 21-31 дні (днів)
2+183.11 грн
10+113.13 грн
100+77.03 грн
500+57.79 грн
1000+53.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 Infineon Technologies infineon-ipd80r1k2p7-datasheet-en.pdf Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 1784 шт:
термін постачання 21-31 дні (днів)
3+116.37 грн
10+70.70 грн
100+47.13 грн
500+34.75 грн
1000+31.70 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R750P7ATMA1 IPD80R750P7ATMA1 Infineon Technologies Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0 Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 3790 шт:
термін постачання 21-31 дні (днів)
3+140.33 грн
10+86.19 грн
100+58.03 грн
500+43.16 грн
1000+40.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R2K4P7ATMA1 IPD80R2K4P7ATMA1 Infineon Technologies Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2583 шт:
термін постачання 21-31 дні (днів)
5+83.85 грн
10+55.62 грн
100+37.21 грн
500+27.14 грн
1000+24.64 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
V6114100NSHPSA1 Infineon Technologies Description: CLAMP FOR DISK DEVICES
товару немає в наявності
В кошику  од. на суму  грн.
V501445S3HPSA1 Infineon Technologies Description: CLAMP DISK DEVICES 42MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V501460MHPSA1 V501460MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa Description: CLAMP DISK DEVICES 42MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 1.929" (49.00mm)
Shape: Rectangular
Type: Mount
Width: 1.811" (46.00mm)
Height: 1.929" (49.00mm)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+5714.96 грн
5+5188.87 грн
В кошику  од. на суму  грн.
V501460NHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..N-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d79a2a809b7 Description: CLAMP DISK DEVICES 42MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V7214150MHPSA1 Infineon Technologies Infineon-CLAMP_V72_14_150M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e1a7d9c1d79 Description: CLAMP DISK DEVICES 58MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V8926120NHPSA1 Infineon Technologies Description: CLAMP DISK DEVICES 75MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V8926170NHPSA1 Infineon Technologies V89.pdf Description: CLAMP DISK DEVICES 75MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V8926400NHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V89-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d9521990b27 Description: CLAMP DISK DEVICES 75MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
D1251S45TXPSA1 D1251S45TXPSA1 Infineon Technologies Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13 Description: DIODE GEN PURP 4.5KV 1530A
товару немає в наявності
В кошику  од. на суму  грн.
D126A45CXPSA1 Infineon Technologies Description: DIODE GEN PURP 4.5KV 200A
товару немає в наявності
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DD81S14KHPSA1 Infineon Technologies Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f Description: DIODE MODULE GP 1400V 96A
товару немає в наявності
В кошику  од. на суму  грн.
DD81S14KAHPSA1 Infineon Technologies Description: DIODE ARRAY MOD 1000V 150A
товару немає в наявності
В кошику  од. на суму  грн.
DD81S14KKHPSA1 Infineon Technologies Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f Description: DIODE ARRAY MOD 1000V 150A
товару немає в наявності
В кошику  од. на суму  грн.
DD1000S33HE3BPSA1 DD1000S33HE3BPSA1 Infineon Technologies Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279 Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+82657.78 грн
В кошику  од. на суму  грн.
DD500S33HE3BPSA1 DD500S33HE3BPSA1 Infineon Technologies Infineon-DD500S33HE3-DS-v03_02-EN.pdf?fileId=db3a30433784a0400137990501fd2796 Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+66676.59 грн
В кошику  од. на суму  грн.
DDB6U104N16RRBOSA1 DDB6U104N16RRBOSA1 Infineon Technologies Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f Description: DIODE MODULE GP 1600V 25A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 25A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1600 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
товару немає в наявності
В кошику  од. на суму  грн.
DDB6U144N16RBOSA1 DDB6U144N16RBOSA1 Infineon Technologies INFN-S-A0005253095-1.pdf?t.download=true&u=5oefqw Description: DIODE MODULE GP 1600V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+6670.74 грн
В кошику  од. на суму  грн.
D8320N02TVFXPSA1 Infineon Technologies D8320N.pdf Description: DIODE GEN PURP 200V 8320A
товару немає в наявності
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D850N30TXPSA1 D850N30TXPSA1 Infineon Technologies D850N.pdf Description: DIODE GEN PURP 3KV 850A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 850A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Current - Reverse Leakage @ Vr: 50 mA @ 3000 V
товару немає в наявності
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D56U40CXPSA1 D56U40CXPSA1 Infineon Technologies D56S,U.pdf Description: DIODE GEN PURP 4KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4000 V
товару немає в наявності
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D56U45CPRXPSA1 D56U45CPRXPSA1 Infineon Technologies D56S,U.pdf Description: DIODE GP 4.5KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4500 V
товару немає в наявності
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D452N14EXPSA1 Infineon Technologies D452N.pdf Description: DIODE GEN PURP 1.4KV 450A FL54
товару немає в наявності
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D452N18EXPSA1 Infineon Technologies D452N.pdf Description: DIODE RECTIFIER 1200V 710A
товару немає в наявності
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D452N18EVFXPSA1 D452N18EVFXPSA1 Infineon Technologies D452N.pdf Description: DIODE GEN PURP 1.8KV 450A FL54
Packaging: Bulk
Package / Case: Nonstandard
Mounting Type: Screw Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: FL54
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
товару немає в наявності
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D970N02TXPSA1 D970N02TXPSA1 Infineon Technologies D970N.pdf Description: DIODE GEN PURP 200V 970A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 970A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Current - Reverse Leakage @ Vr: 20 mA @ 200 V
товару немає в наявності
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D970N04TXPSA1 Infineon Technologies D970N.pdf Description: DIODE GEN PURP 400V 970A
товару немає в наявності
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IPD80R2K0P7ATMA1 Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a
IPD80R2K0P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+30.30 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R3K3P7ATMA1 INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw
IPD80R3K3P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+25.33 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R600P7ATMA1 Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056
IPD80R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+53.21 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R1K2P7ATMA1 infineon-ipd80r1k2p7-datasheet-en.pdf
IPD80R1K2P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
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IPD80R750P7ATMA1 Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0
IPD80R750P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+39.39 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD80R2K4P7ATMA1 Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed
IPD80R2K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+25.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPA80R900P7XKSA1 infineon-ipa80r900p7-datasheet-en.pdf
IPA80R900P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+135.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP80R900P7XKSA1 infineon-ipp80r900p7-ds-en.pdf
IPP80R900P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
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IPU80R900P7AKMA1 infineon-ipu80r900p7-datasheet-en.pdf
IPU80R900P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 1328 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.65 грн
75+51.61 грн
150+46.25 грн
525+36.23 грн
1050+33.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP80R360P7XKSA1 infineon-ipp80r360p7-ds-en.pdf
IPP80R360P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
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IPW80R360P7XKSA1 Infineon-IPW80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b56d7ed84018a
IPW80R360P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+302.05 грн
30+159.16 грн
120+130.15 грн
510+102.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPS80R900P7AKMA1 infineon-ips80r900p7-datasheet-en.pdf
IPS80R900P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
товару немає в наявності
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IPU80R2K0P7AKMA1 Infineon-IPU80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b479bed537056
IPU80R2K0P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товару немає в наявності
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IPS80R2K0P7AKMA1 infineon-ips80r2k0p7-datasheet-en.pdf
IPS80R2K0P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товару немає в наявності
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IPU80R3K3P7AKMA1 Infineon-IPU80R3K3P7-DS-v02_00-EN.pdf?fileId=5546d4625bd71aa0015c1098872e3e4f
IPU80R3K3P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
товару немає в наявності
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IPA80R1K2P7XKSA1 infineon-ipa80r1k2p7-datasheet-en.pdf
IPA80R1K2P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP80R1K2P7XKSA1 infineon-ipp80r1k2p7-ds-en.pdf
IPP80R1K2P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP80R750P7XKSA1 infineon-ipp80r750p7-ds-en.pdf
IPP80R750P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP80R600P7XKSA1 infineon-ipp80r600p7-ds-en.pdf?fileId=5546d4625bd71aa0015c108f62163d06
IPP80R600P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R2K4P7AKMA1 Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185
IPU80R2K4P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R1K2P7AKMA1 infineon-ipu80r1k2p7-datasheet-en.pdf
IPU80R1K2P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPU80R600P7AKMA1 Infineon-IPU80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c14dce5015c165a8de60455
IPU80R600P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 1456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.93 грн
10+99.78 грн
100+79.42 грн
500+63.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPS80R2K4P7AKMA1 Infineon-IPS80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ced92d89f1179
IPS80R2K4P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R1K2P7AKMA1 infineon-ips80r1k2p7-datasheet-en.pdf
IPS80R1K2P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO251-3-342
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R750P7AKMA1 Infineon-IPS80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedb79d591183
IPS80R750P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO251-3
товару немає в наявності
В кошику  од. на суму  грн.
IPS80R600P7AKMA1 Infineon-IPS80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1adc12ee6394
IPS80R600P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3-342
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R900P7ATMA1 Infineon-IPD80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b4287da753ee9
IPD80R900P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
на замовлення 4413 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.07 грн
10+75.81 грн
100+50.80 грн
500+37.60 грн
1000+34.36 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R360P7ATMA1 Infineon-IPD80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b425a44e73e94
IPD80R360P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD80R2K0P7ATMA1 Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a
IPD80R2K0P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
на замовлення 2567 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+112.95 грн
10+69.05 грн
100+45.80 грн
500+33.64 грн
1000+30.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD80R3K3P7ATMA1 INFN-S-A0004583823-1.pdf?t.download=true&u=5oefqw
IPD80R3K3P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
на замовлення 4993 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.11 грн
10+60.73 грн
100+40.02 грн
500+29.20 грн
1000+26.51 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD80R600P7ATMA1 Infineon-IPD80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625c167129015c1a9c04e36056
IPD80R600P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
на замовлення 4150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+183.11 грн
10+113.13 грн
100+77.03 грн
500+57.79 грн
1000+53.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD80R1K2P7ATMA1 infineon-ipd80r1k2p7-datasheet-en.pdf
IPD80R1K2P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
на замовлення 1784 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.37 грн
10+70.70 грн
100+47.13 грн
500+34.75 грн
1000+31.70 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R750P7ATMA1 Infineon-IPD80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cea08926648f0
IPD80R750P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
на замовлення 3790 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+140.33 грн
10+86.19 грн
100+58.03 грн
500+43.16 грн
1000+40.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD80R2K4P7ATMA1 Infineon-IPD80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce9ed17f348ed
IPD80R2K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 2583 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+83.85 грн
10+55.62 грн
100+37.21 грн
500+27.14 грн
1000+24.64 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
V6114100NSHPSA1
Виробник: Infineon Technologies
Description: CLAMP FOR DISK DEVICES
товару немає в наявності
В кошику  од. на суму  грн.
V501445S3HPSA1
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V501460MHPSA1 Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa
V501460MHPSA1
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Packaging: Bulk
Color: Natural
Length: 1.929" (49.00mm)
Shape: Rectangular
Type: Mount
Width: 1.811" (46.00mm)
Height: 1.929" (49.00mm)
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5714.96 грн
5+5188.87 грн
В кошику  од. на суму  грн.
V501460NHPSA1 Infineon-Clamp_for_disc_devices_V50..N-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d79a2a809b7
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
товару немає в наявності
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V7214150MHPSA1 Infineon-CLAMP_V72_14_150M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e1a7d9c1d79
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 58MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V8926120NHPSA1
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V8926170NHPSA1 V89.pdf
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
V8926400NHPSA1 Infineon-Clamp_for_disc_devices_V89-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d9521990b27
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
товару немає в наявності
В кошику  од. на суму  грн.
D1251S45TXPSA1 Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13
D1251S45TXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 1530A
товару немає в наявності
В кошику  од. на суму  грн.
D126A45CXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4.5KV 200A
товару немає в наявності
В кошику  од. на суму  грн.
DD81S14KHPSA1 Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1400V 96A
товару немає в наявності
В кошику  од. на суму  грн.
DD81S14KAHPSA1
Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1000V 150A
товару немає в наявності
В кошику  од. на суму  грн.
DD81S14KKHPSA1 Infineon-DD81S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42f726e4b7f
Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1000V 150A
товару немає в наявності
В кошику  од. на суму  грн.
DD1000S33HE3BPSA1 Infineon-DD1000S33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d7605752a7279
DD1000S33HE3BPSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A
Current - Reverse Leakage @ Vr: 1000 A @ 1800 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+82657.78 грн
В кошику  од. на суму  грн.
DD500S33HE3BPSA1 Infineon-DD500S33HE3-DS-v03_02-EN.pdf?fileId=db3a30433784a0400137990501fd2796
DD500S33HE3BPSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+66676.59 грн
В кошику  од. на суму  грн.
DDB6U104N16RRBOSA1 Infineon-DDB6U104N16RR-DS-v01_00-en_de.pdf?fileId=db3a30433e4143bd013e55b8a63a205f
DDB6U104N16RRBOSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V 25A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 25A (DC)
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1600 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
товару немає в наявності
В кошику  од. на суму  грн.
DDB6U144N16RBOSA1 INFN-S-A0005253095-1.pdf?t.download=true&u=5oefqw
DDB6U144N16RBOSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 150 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6670.74 грн
В кошику  од. на суму  грн.
D8320N02TVFXPSA1 D8320N.pdf
Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 8320A
товару немає в наявності
В кошику  од. на суму  грн.
D850N30TXPSA1 D850N.pdf
D850N30TXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 3KV 850A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 850A
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
Current - Reverse Leakage @ Vr: 50 mA @ 3000 V
товару немає в наявності
В кошику  од. на суму  грн.
D56U40CXPSA1 D56S,U.pdf
D56U40CXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4000 V
товару немає в наявності
В кошику  од. на суму  грн.
D56U45CPRXPSA1 D56S,U.pdf
D56U45CPRXPSA1
Виробник: Infineon Technologies
Description: DIODE GP 4.5KV 102A DSW272-1
Packaging: Bulk
Package / Case: Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Technology: Standard
Current - Average Rectified (Io): 102A
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Current - Reverse Leakage @ Vr: 5 mA @ 4500 V
товару немає в наявності
В кошику  од. на суму  грн.
D452N14EXPSA1 D452N.pdf
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.4KV 450A FL54
товару немає в наявності
В кошику  од. на суму  грн.
D452N18EXPSA1 D452N.pdf
Виробник: Infineon Technologies
Description: DIODE RECTIFIER 1200V 710A
товару немає в наявності
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D452N18EVFXPSA1 D452N.pdf
D452N18EVFXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.8KV 450A FL54
Packaging: Bulk
Package / Case: Nonstandard
Mounting Type: Screw Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 450A
Supplier Device Package: FL54
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
товару немає в наявності
В кошику  од. на суму  грн.
D970N02TXPSA1 D970N.pdf
D970N02TXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 970A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 970A
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
Current - Reverse Leakage @ Vr: 20 mA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
D970N04TXPSA1 D970N.pdf
Виробник: Infineon Technologies
Description: DIODE GEN PURP 400V 970A
товару немає в наявності
В кошику  од. на суму  грн.
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