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IPW60R250CP IPW60R250CP Infineon Technologies IPW60R250CP_rev2%5B1%5D.2_PCN.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320896aa201208b38102a008d Description: MOSFET N-CH 650V 12A TO247-3
на замовлення 10800 шт:
термін постачання 21-31 дні (днів)
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IPW60R250CPFKSA1 IPW60R250CPFKSA1 Infineon Technologies INFNS17429-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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IRG4PSC71UDPBF-INF Infineon Technologies IRSDS17594-1.pdf?t.download=true&u=5oefqw Description: ULTRAFAST COPACK IGBT W/ULTRAFAS
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 90ns/245ns
Switching Energy: 3.26mJ (on), 2.27mJ (off)
Test Condition: 480V, 60A, 5Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
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IDP09E120XKSA1 IDP09E120XKSA1 Infineon Technologies INFNS14026-1.pdf?t.download=true&u=5oefqw Description: DIODE STD 1200V 23A PGTO22021
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 23A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 5305 шт:
термін постачання 21-31 дні (днів)
294+74.69 грн
Мінімальне замовлення: 294
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BFR92PE6530 Infineon Technologies Description: RF LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Part Status: Active
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BFR92PE6530HTSA1 Infineon Technologies Description: RF LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Part Status: Active
на замовлення 119968 шт:
термін постачання 21-31 дні (днів)
2840+8.05 грн
Мінімальне замовлення: 2840
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IRG4PH40UD-EPBF-INF IRG4PH40UD-EPBF-INF Infineon Technologies IRSDD00021-1203.pdf?t.download=true&u=5oefqw Description: ULTRAFAST COPACK IGBT W/ULTRAFAS
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 63 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 46ns/97ns
Switching Energy: 1.8mJ (on), 1.93mJ (off)
Test Condition: 800V, 21A, 10Ohm, 15V
Gate Charge: 86 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 82 A
Power - Max: 160 W
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IRLR3802TRPBF-INF IRLR3802TRPBF-INF Infineon Technologies irlr3802pbf.pdf?fileId=5546d462533600a40153566d742526b5 Description: IRLR3802 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
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ICE3B0565J ICE3B0565J Infineon Technologies Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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ICE3B0565JG Infineon Technologies INFN-S-A0003615022-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
на замовлення 4655 шт:
термін постачання 21-31 дні (днів)
244+89.03 грн
Мінімальне замовлення: 244
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TDA4863GXUMA2 TDA4863GXUMA2 Infineon Technologies Infineon-TDA4863-DS-v02_00-en.pdf?fileId=db3a304412b407950112b427d2d23ce8 Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-3
Part Status: Obsolete
Current - Startup: 20 µA
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TDA4863GXUMA2 TDA4863GXUMA2 Infineon Technologies Infineon-TDA4863-DS-v02_00-en.pdf?fileId=db3a304412b407950112b427d2d23ce8 Description: IC PFC CTRLR DCM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-3
Part Status: Obsolete
Current - Startup: 20 µA
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IRFC7314B Infineon Technologies IRF7314PbF_10-7-04.pdf Description: MOSFET P-CH 20V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Vgs (Max): ±12V
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IKW03N120H2FKSA1 IKW03N120H2FKSA1 Infineon Technologies IK(P,W)03N120H2.pdf Description: IGBT 1200V 9.6A 62.5W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
на замовлення 3415 шт:
термін постачання 21-31 дні (днів)
219+101.74 грн
Мінімальне замовлення: 219
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IKP03N120H2 Infineon Technologies INFNS27676-1.pdf?t.download=true&u=5oefqw Description: IGBT, 9.6A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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IKW03N120H IKW03N120H Infineon Technologies INFNS27676-1.pdf?t.download=true&u=5oefqw Description: IGBT WITH ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 140µJ (on), 150µJ (off)
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
на замовлення 683 шт:
термін постачання 21-31 дні (днів)
226+96.26 грн
Мінімальне замовлення: 226
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IGP03N120H2 IGP03N120H2 Infineon Technologies INFNS11544-1.pdf?t.download=true&u=5oefqw Description: IGBT, 9.6A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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IKW03N120H2 IKW03N120H2 Infineon Technologies INFNS27676-1.pdf?t.download=true&u=5oefqw Description: IGBT WITH ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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BCR10PNH6730 BCR10PNH6730 Infineon Technologies INFNS17178-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
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BCR 101L3 E6327 BCR 101L3 E6327 Infineon Technologies BCR101.pdf Description: TRANS PREBIAS NPN 250MW TSLP-3
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BCR 101T E6327 BCR 101T E6327 Infineon Technologies BCR101.pdf Description: TRANS PREBIAS NPN 50V 0.05A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
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BCR 103F E6327 BCR 103F E6327 Infineon Technologies BCR103.pdf Description: TRANS PREBIAS NPN 250MW TSFP-3
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BCR 103L3 E6327 BCR 103L3 E6327 Infineon Technologies BCR103.pdf Description: TRANS PREBIAS NPN 250MW TSLP-3
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BCR 103T E6327 BCR 103T E6327 Infineon Technologies BCR103.pdf Description: TRANS PREBIAS NPN 250MW SC75
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TLE4266GSV10HTMA1 TLE4266GSV10HTMA1 Infineon Technologies Infineon-TLE4266-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f94377fa3e1f Description: IC REG LINEAR 10V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 120mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 10V
Control Features: Inhibit
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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TLE4266GSV10HTMA1 TLE4266GSV10HTMA1 Infineon Technologies Infineon-TLE4266-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f94377fa3e1f Description: IC REG LINEAR 10V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 120mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 10V
Control Features: Inhibit
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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IPP070N06NGIN Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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BSZ040N06LS5ATMA1 BSZ040N06LS5ATMA1 Infineon Technologies Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
5000+45.21 грн
Мінімальне замовлення: 5000
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BSZ040N06LS5ATMA1 BSZ040N06LS5ATMA1 Infineon Technologies Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
на замовлення 67206 шт:
термін постачання 21-31 дні (днів)
3+126.23 грн
10+86.39 грн
100+61.43 грн
500+47.34 грн
1000+45.32 грн
Мінімальне замовлення: 3
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BCX52-16E6327 BCX52-16E6327 Infineon Technologies INFNS12465-1.pdf?t.download=true&u=5oefqw Description: TRANS 60V 1A PG-SOT89-4-2
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89-4-2
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
3463+6.81 грн
Мінімальне замовлення: 3463
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AUIRGB4062D1-INF Infineon Technologies INFN-S-A0008053412-1.pdf?t.download=true&u=5oefqw Description: IGBT, 59A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/90ns
Switching Energy: 532µJ (on), 311µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 246 W
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IKP15N65H5XKSA1718 IKP15N65H5XKSA1718 Infineon Technologies INFN-S-A0001299498-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 120µJ (on), 50µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
товару немає в наявності
В кошику  од. на суму  грн.
IRLL024NPBF-INF IRLL024NPBF-INF Infineon Technologies INFN-S-A0002498028-1.pdf?t.download=true&u=5oefqw Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
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BSD314SPEH6327XTSA1 BSD314SPEH6327XTSA1 Infineon Technologies Infineon-BSD314SPE-DS-v02_04-en.pdf?fileId=db3a3043321e49940132482ca5c6248a Description: MOSFET P-CH 30V 1.5A SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT363-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
12+28.58 грн
14+22.02 грн
100+14.99 грн
500+10.55 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BSC077N12NS3GATMA1 BSC077N12NS3GATMA1 Infineon Technologies BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39 Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+81.80 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TLE72093RAUMA1 TLE72093RAUMA1 Infineon Technologies TLE7209-3R_DS_10.pdf?fileId=5546d4614815da8801485e7bc73d17ed Description: IC MOTOR DRIVER 3.5V-5.5V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.5V ~ 5.5V
Technology: Power MOSFET
Voltage - Load: 5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+203.99 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
TLE72093RAUMA1 TLE72093RAUMA1 Infineon Technologies TLE7209-3R_DS_10.pdf?fileId=5546d4614815da8801485e7bc73d17ed Description: IC MOTOR DRIVER 3.5V-5.5V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.5V ~ 5.5V
Technology: Power MOSFET
Voltage - Load: 5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
на замовлення 1355 шт:
термін постачання 21-31 дні (днів)
1+354.08 грн
10+259.62 грн
25+239.38 грн
100+203.76 грн
250+193.80 грн
В кошику  од. на суму  грн.
BSS169L6327 BSS169L6327 Infineon Technologies INFNS16754-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
товару немає в наявності
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BAS4005E6433HTMA1 BAS4005E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+3.76 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
TLE8110EDXUMA1 TLE8110EDXUMA1 Infineon Technologies Infineon-TLE8110ED-DS-v01_00-EN.pdf?fileId=5546d46261ff57770162008c5f7b2d59 Description: IC LOW-SIDE SWITCH DSO36-72
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Low-Side Switch
Supplier Device Package: PG-DSO-36-72
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+379.66 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TLE8110EDXUMA1 TLE8110EDXUMA1 Infineon Technologies Infineon-TLE8110ED-DS-v01_00-EN.pdf?fileId=5546d46261ff57770162008c5f7b2d59 Description: IC LOW-SIDE SWITCH DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Low-Side Switch
Supplier Device Package: PG-DSO-36-72
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
1+636.70 грн
10+475.59 грн
25+441.23 грн
100+378.59 грн
250+361.68 грн
500+351.49 грн
В кошику  од. на суму  грн.
IPN80R2K4P7ATMA1 IPN80R2K4P7ATMA1 Infineon Technologies Infineon-IPN80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f5270399d6b7c Description: MOSFET N-CH 800V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+21.24 грн
6000+19.00 грн
9000+18.72 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN80R2K4P7ATMA1 IPN80R2K4P7ATMA1 Infineon Technologies Infineon-IPN80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f5270399d6b7c Description: MOSFET N-CH 800V 2.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 13639 шт:
термін постачання 21-31 дні (днів)
5+76.21 грн
10+48.47 грн
100+32.48 грн
500+23.10 грн
1000+20.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BGS16MN14E6327XTSA1 BGS16MN14E6327XTSA1 Infineon Technologies BGS16MN14_v3+0.pdf?fileId=5546d46146d18cb40147207a5e3f02a2 Description: IC RF SWITCH SP6T 2.7GHZ 14TSNP
на замовлення 2663 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IRFR18N15DPBF-INF IRFR18N15DPBF-INF Infineon Technologies IRSDS10382-1.pdf?t.download=true&u=5oefqw Description: HEXFET SMPS POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
товару немає в наявності
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IRFR18N15DTRLP-INF IRFR18N15DTRLP-INF Infineon Technologies IRSDS10382-1.pdf?t.download=true&u=5oefqw Description: HEXFET SMPS POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
товару немає в наявності
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CY8CTMG201A-32LQXI CY8CTMG201A-32LQXI Infineon Technologies CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf Description: IC MCU 16K FLASH PSOC 32UQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 8067 шт:
термін постачання 21-31 дні (днів)
73+316.15 грн
Мінімальне замовлення: 73
В кошику  од. на суму  грн.
FS45MR12W1M1B11BOMA1 FS45MR12W1M1B11BOMA1 Infineon Technologies Infineon-FS45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670cfae6a534bb Description: MOSFET 6N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
Part Status: Obsolete
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
1+10414.28 грн
24+8806.34 грн
В кошику  од. на суму  грн.
BSZ16DN25NS3GATMA1 BSZ16DN25NS3GATMA1 Infineon Technologies BSZ16DN25NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15a835541a6b Description: MOSFET N-CH 250V 10.9A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
BSZ16DN25NS3GATMA1 BSZ16DN25NS3GATMA1 Infineon Technologies BSZ16DN25NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15a835541a6b Description: MOSFET N-CH 250V 10.9A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
на замовлення 4801 шт:
термін постачання 21-31 дні (днів)
2+165.13 грн
10+103.59 грн
100+78.31 грн
500+59.05 грн
1000+53.10 грн
2000+50.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BAS28E6327 BAS28E6327 Infineon Technologies INFNS10817-1.pdf?t.download=true&u=5oefqw Description: SWITCHING DIODE ARRAY
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
товару немає в наявності
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BAS28 Infineon Technologies Description: SWITCHING DIODE ARRAY
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-143
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
товару немає в наявності
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IPB60R099CPAATMA1 IPB60R099CPAATMA1 Infineon Technologies Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB60R099CPAATMA1 IPB60R099CPAATMA1 Infineon Technologies Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
1+407.27 грн
10+271.93 грн
100+267.57 грн
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IPI60R099CP Infineon Technologies Description: PFET, 31A I(D), 600V, 0.099OHM,
Packaging: Bulk
Part Status: Active
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IPP60R099CP IPP60R099CP Infineon Technologies INFNS15861-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 31A TO220-3-1
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CY7C68015A-56PVXC CY7C68015A-56PVXC Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 56SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-SSOP
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 4969 шт:
термін постачання 21-31 дні (днів)
69+332.11 грн
Мінімальне замовлення: 69
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CY7C68321C-56LFXC CY7C68321C-56LFXC Infineon Technologies CY7C68300C%2C301C%2C320C%2C321C.pdf Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
на замовлення 2601 шт:
термін постачання 21-31 дні (днів)
44+511.37 грн
Мінімальне замовлення: 44
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CY7C68321C-100AXC CY7C68321C-100AXC Infineon Technologies CY7C68300C%2C301C%2C320C%2C321C.pdf Description: IC USB 2.0 BRIDGE AT2LP 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 100-TQFP (14x20)
DigiKey Programmable: Not Verified
на замовлення 4376 шт:
термін постачання 21-31 дні (днів)
38+586.64 грн
Мінімальне замовлення: 38
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CY7C68016A-56LFXC CY7C68016A-56LFXC Infineon Technologies download description Description: IC MCU USB PERIPH HI SPD 56VQFN
Packaging: Tube
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 4125 шт:
термін постачання 21-31 дні (днів)
29+768.90 грн
Мінімальне замовлення: 29
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IPW60R250CP IPW60R250CP_rev2%5B1%5D.2_PCN.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320896aa201208b38102a008d
IPW60R250CP
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 12A TO247-3
на замовлення 10800 шт:
термін постачання 21-31 дні (днів)
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IPW60R250CPFKSA1 INFNS17429-1.pdf?t.download=true&u=5oefqw
IPW60R250CPFKSA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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IRG4PSC71UDPBF-INF IRSDS17594-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: ULTRAFAST COPACK IGBT W/ULTRAFAS
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 90ns/245ns
Switching Energy: 3.26mJ (on), 2.27mJ (off)
Test Condition: 480V, 60A, 5Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
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IDP09E120XKSA1 INFNS14026-1.pdf?t.download=true&u=5oefqw
IDP09E120XKSA1
Виробник: Infineon Technologies
Description: DIODE STD 1200V 23A PGTO22021
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 23A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 5305 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
294+74.69 грн
Мінімальне замовлення: 294
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BFR92PE6530
Виробник: Infineon Technologies
Description: RF LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Part Status: Active
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BFR92PE6530HTSA1
Виробник: Infineon Technologies
Description: RF LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Part Status: Active
на замовлення 119968 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2840+8.05 грн
Мінімальне замовлення: 2840
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IRG4PH40UD-EPBF-INF IRSDD00021-1203.pdf?t.download=true&u=5oefqw
IRG4PH40UD-EPBF-INF
Виробник: Infineon Technologies
Description: ULTRAFAST COPACK IGBT W/ULTRAFAS
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 63 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 46ns/97ns
Switching Energy: 1.8mJ (on), 1.93mJ (off)
Test Condition: 800V, 21A, 10Ohm, 15V
Gate Charge: 86 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 82 A
Power - Max: 160 W
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IRLR3802TRPBF-INF irlr3802pbf.pdf?fileId=5546d462533600a40153566d742526b5
IRLR3802TRPBF-INF
Виробник: Infineon Technologies
Description: IRLR3802 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
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ICE3B0565J
ICE3B0565J
Виробник: Infineon Technologies
Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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ICE3B0565JG INFN-S-A0003615022-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DSO-12
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
на замовлення 4655 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
244+89.03 грн
Мінімальне замовлення: 244
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TDA4863GXUMA2 Infineon-TDA4863-DS-v02_00-en.pdf?fileId=db3a304412b407950112b427d2d23ce8
TDA4863GXUMA2
Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-3
Part Status: Obsolete
Current - Startup: 20 µA
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TDA4863GXUMA2 Infineon-TDA4863-DS-v02_00-en.pdf?fileId=db3a304412b407950112b427d2d23ce8
TDA4863GXUMA2
Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8-3
Part Status: Obsolete
Current - Startup: 20 µA
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IRFC7314B IRF7314PbF_10-7-04.pdf
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Vgs (Max): ±12V
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IKW03N120H2FKSA1 IK(P,W)03N120H2.pdf
IKW03N120H2FKSA1
Виробник: Infineon Technologies
Description: IGBT 1200V 9.6A 62.5W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
на замовлення 3415 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
219+101.74 грн
Мінімальне замовлення: 219
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IKP03N120H2 INFNS27676-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT, 9.6A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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IKW03N120H INFNS27676-1.pdf?t.download=true&u=5oefqw
IKW03N120H
Виробник: Infineon Technologies
Description: IGBT WITH ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-21
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 140µJ (on), 150µJ (off)
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
на замовлення 683 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
226+96.26 грн
Мінімальне замовлення: 226
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IGP03N120H2 INFNS11544-1.pdf?t.download=true&u=5oefqw
IGP03N120H2
Виробник: Infineon Technologies
Description: IGBT, 9.6A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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IKW03N120H2 INFNS27676-1.pdf?t.download=true&u=5oefqw
IKW03N120H2
Виробник: Infineon Technologies
Description: IGBT WITH ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Part Status: Active
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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BCR10PNH6730 INFNS17178-1.pdf?t.download=true&u=5oefqw
BCR10PNH6730
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
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BCR 101L3 E6327 BCR101.pdf
BCR 101L3 E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSLP-3
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BCR 101T E6327 BCR101.pdf
BCR 101T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V 0.05A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
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BCR 103F E6327 BCR103.pdf
BCR 103F E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSFP-3
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BCR 103L3 E6327 BCR103.pdf
BCR 103L3 E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSLP-3
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BCR 103T E6327 BCR103.pdf
BCR 103T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW SC75
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TLE4266GSV10HTMA1 Infineon-TLE4266-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f94377fa3e1f
TLE4266GSV10HTMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 10V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 120mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 10V
Control Features: Inhibit
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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TLE4266GSV10HTMA1 Infineon-TLE4266-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f94377fa3e1f
TLE4266GSV10HTMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 10V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 120mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 500 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 10V
Control Features: Inhibit
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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IPP070N06NGIN
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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BSZ040N06LS5ATMA1 Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa
BSZ040N06LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+45.21 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSZ040N06LS5ATMA1 Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa
BSZ040N06LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
на замовлення 67206 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+126.23 грн
10+86.39 грн
100+61.43 грн
500+47.34 грн
1000+45.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BCX52-16E6327 INFNS12465-1.pdf?t.download=true&u=5oefqw
BCX52-16E6327
Виробник: Infineon Technologies
Description: TRANS 60V 1A PG-SOT89-4-2
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89-4-2
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3463+6.81 грн
Мінімальне замовлення: 3463
В кошику  од. на суму  грн.
AUIRGB4062D1-INF INFN-S-A0008053412-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT, 59A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/90ns
Switching Energy: 532µJ (on), 311µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 246 W
товару немає в наявності
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IKP15N65H5XKSA1718 INFN-S-A0001299498-1.pdf?t.download=true&u=5oefqw
IKP15N65H5XKSA1718
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 120µJ (on), 50µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
товару немає в наявності
В кошику  од. на суму  грн.
IRLL024NPBF-INF INFN-S-A0002498028-1.pdf?t.download=true&u=5oefqw
IRLL024NPBF-INF
Виробник: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товару немає в наявності
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BSD314SPEH6327XTSA1 Infineon-BSD314SPE-DS-v02_04-en.pdf?fileId=db3a3043321e49940132482ca5c6248a
BSD314SPEH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Supplier Device Package: PG-SOT363-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+28.58 грн
14+22.02 грн
100+14.99 грн
500+10.55 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BSC077N12NS3GATMA1 BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
BSC077N12NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+81.80 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TLE72093RAUMA1 TLE7209-3R_DS_10.pdf?fileId=5546d4614815da8801485e7bc73d17ed
TLE72093RAUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3.5V-5.5V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.5V ~ 5.5V
Technology: Power MOSFET
Voltage - Load: 5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+203.99 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
TLE72093RAUMA1 TLE7209-3R_DS_10.pdf?fileId=5546d4614815da8801485e7bc73d17ed
TLE72093RAUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3.5V-5.5V 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.5V ~ 5.5V
Technology: Power MOSFET
Voltage - Load: 5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
на замовлення 1355 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+354.08 грн
10+259.62 грн
25+239.38 грн
100+203.76 грн
250+193.80 грн
В кошику  од. на суму  грн.
BSS169L6327 INFNS16754-1.pdf?t.download=true&u=5oefqw
BSS169L6327
Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 190mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
товару немає в наявності
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BAS4005E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4005E6433HTMA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+3.76 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
TLE8110EDXUMA1 Infineon-TLE8110ED-DS-v01_00-EN.pdf?fileId=5546d46261ff57770162008c5f7b2d59
TLE8110EDXUMA1
Виробник: Infineon Technologies
Description: IC LOW-SIDE SWITCH DSO36-72
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Low-Side Switch
Supplier Device Package: PG-DSO-36-72
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+379.66 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TLE8110EDXUMA1 Infineon-TLE8110ED-DS-v01_00-EN.pdf?fileId=5546d46261ff57770162008c5f7b2d59
TLE8110EDXUMA1
Виробник: Infineon Technologies
Description: IC LOW-SIDE SWITCH DSO36-72
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Low-Side Switch
Supplier Device Package: PG-DSO-36-72
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+636.70 грн
10+475.59 грн
25+441.23 грн
100+378.59 грн
250+361.68 грн
500+351.49 грн
В кошику  од. на суму  грн.
IPN80R2K4P7ATMA1 Infineon-IPN80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f5270399d6b7c
IPN80R2K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+21.24 грн
6000+19.00 грн
9000+18.72 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN80R2K4P7ATMA1 Infineon-IPN80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f5270399d6b7c
IPN80R2K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
на замовлення 13639 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.21 грн
10+48.47 грн
100+32.48 грн
500+23.10 грн
1000+20.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BGS16MN14E6327XTSA1 BGS16MN14_v3+0.pdf?fileId=5546d46146d18cb40147207a5e3f02a2
BGS16MN14E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP6T 2.7GHZ 14TSNP
на замовлення 2663 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IRFR18N15DPBF-INF IRSDS10382-1.pdf?t.download=true&u=5oefqw
IRFR18N15DPBF-INF
Виробник: Infineon Technologies
Description: HEXFET SMPS POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
товару немає в наявності
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IRFR18N15DTRLP-INF IRSDS10382-1.pdf?t.download=true&u=5oefqw
IRFR18N15DTRLP-INF
Виробник: Infineon Technologies
Description: HEXFET SMPS POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
CY8CTMG201A-32LQXI CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf
CY8CTMG201A-32LQXI
Виробник: Infineon Technologies
Description: IC MCU 16K FLASH PSOC 32UQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 8067 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
73+316.15 грн
Мінімальне замовлення: 73
В кошику  од. на суму  грн.
FS45MR12W1M1B11BOMA1 Infineon-FS45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670cfae6a534bb
FS45MR12W1M1B11BOMA1
Виробник: Infineon Technologies
Description: MOSFET 6N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
Part Status: Obsolete
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10414.28 грн
24+8806.34 грн
В кошику  од. на суму  грн.
BSZ16DN25NS3GATMA1 BSZ16DN25NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15a835541a6b
BSZ16DN25NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 10.9A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
товару немає в наявності
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BSZ16DN25NS3GATMA1 BSZ16DN25NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15a835541a6b
BSZ16DN25NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 10.9A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 32µA
Supplier Device Package: PG-TSDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
на замовлення 4801 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.13 грн
10+103.59 грн
100+78.31 грн
500+59.05 грн
1000+53.10 грн
2000+50.51 грн
Мінімальне замовлення: 2
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BAS28E6327 INFNS10817-1.pdf?t.download=true&u=5oefqw
BAS28E6327
Виробник: Infineon Technologies
Description: SWITCHING DIODE ARRAY
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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BAS28
Виробник: Infineon Technologies
Description: SWITCHING DIODE ARRAY
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-143
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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IPB60R099CPAATMA1 Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t
IPB60R099CPAATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
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IPB60R099CPAATMA1 Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t
IPB60R099CPAATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+407.27 грн
10+271.93 грн
100+267.57 грн
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IPI60R099CP
Виробник: Infineon Technologies
Description: PFET, 31A I(D), 600V, 0.099OHM,
Packaging: Bulk
Part Status: Active
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IPP60R099CP INFNS15861-1.pdf?t.download=true&u=5oefqw
IPP60R099CP
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO220-3-1
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CY7C68015A-56PVXC download
CY7C68015A-56PVXC
Виробник: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-SSOP
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 4969 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
69+332.11 грн
Мінімальне замовлення: 69
В кошику  од. на суму  грн.
CY7C68321C-56LFXC CY7C68300C%2C301C%2C320C%2C321C.pdf
CY7C68321C-56LFXC
Виробник: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
на замовлення 2601 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
44+511.37 грн
Мінімальне замовлення: 44
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CY7C68321C-100AXC CY7C68300C%2C301C%2C320C%2C321C.pdf
CY7C68321C-100AXC
Виробник: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 100-TQFP (14x20)
DigiKey Programmable: Not Verified
на замовлення 4376 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
38+586.64 грн
Мінімальне замовлення: 38
В кошику  од. на суму  грн.
CY7C68016A-56LFXC description download
CY7C68016A-56LFXC
Виробник: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56VQFN
Packaging: Tube
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 4125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+768.90 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
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