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BTS282ZE3180ANTMA1 BTS282ZE3180ANTMA1 Infineon Technologies INFNS27932-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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BTS7741G BTS7741G Infineon Technologies INFNS25530-1.pdf?t.download=true&u=5oefqw Description: IC HALF BRIDGE DRIVER 7A PDSO28
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 100mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 10A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
148+163.13 грн
Мінімальне замовлення: 148
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BTS7750G BTS7750G Infineon Technologies INFNS03487-1.pdf?t.download=true&u=5oefqw Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Part Status: Active
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AIGB40N65H5ATMA1 AIGB40N65H5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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TLI5012BE1000XUMA1 TLI5012BE1000XUMA1 Infineon Technologies Infineon-TLI5012B+E1000-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014ff423fcd077a8 Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2042 шт:
термін постачання 21-31 дні (днів)
2+236.82 грн
5+204.11 грн
10+194.97 грн
25+172.85 грн
50+165.93 грн
100+159.57 грн
500+144.40 грн
1000+140.31 грн
Мінімальне замовлення: 2
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BCM856SH6778 BCM856SH6778 Infineon Technologies INFNS17175-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+9.19 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPW50R140CPFKSA1 IPW50R140CPFKSA1 Infineon Technologies IPW50R140CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42daa4448bf Description: MOSFET N-CH 550V 23A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
на замовлення 16681 шт:
термін постачання 21-31 дні (днів)
98+221.15 грн
Мінімальне замовлення: 98
В кошику  од. на суму  грн.
XMC4502-F100F768AB XMC4502-F100F768AB Infineon Technologies INFNS27688-1.pdf?t.download=true&u=5oefqw Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
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BTS410E2E3062ANTMA1 BTS410E2E3062ANTMA1 Infineon Technologies INFNS30249-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 190mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
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TLE5011FUMA1 TLE5011FUMA1 Infineon Technologies TLE5011_Final_Data_Sheet_V2.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30432ee77f32012f0c4368b5110e Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Last Time Buy
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE5011FUMA1 TLE5011FUMA1 Infineon Technologies TLE5011_Final_Data_Sheet_V2.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30432ee77f32012f0c4368b5110e Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Last Time Buy
Grade: Automotive
Qualification: AEC-Q100
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IR3824MTRPBF Infineon Technologies IR3824_Rev3.7_3-24-16.pdf Description: IC REG BUCK CTRLR PQFN
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AUIRLR120NTRL AUIRLR120NTRL Infineon Technologies INFN-S-A0002298945-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BC857CB5000 BC857CB5000 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A PG-SOT23-3-1
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Qualification: AEC-Q101
на замовлення 540000 шт:
термін постачання 21-31 дні (днів)
8955+2.18 грн
Мінімальне замовлення: 8955
В кошику  од. на суму  грн.
BUZ73AHXKSA1 BUZ73AHXKSA1 Infineon Technologies INFNS13418-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
на замовлення 10823 шт:
термін постачання 21-31 дні (днів)
489+44.24 грн
Мінімальне замовлення: 489
В кошику  од. на суму  грн.
BUZ73ALHXKSA1 BUZ73ALHXKSA1 Infineon Technologies BUZ73AL_H.pdf Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
на замовлення 5454 шт:
термін постачання 21-31 дні (днів)
489+44.24 грн
Мінімальне замовлення: 489
В кошику  од. на суму  грн.
BUZ73AH3046 BUZ73AH3046 Infineon Technologies INFNS13418-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
на замовлення 12135 шт:
термін постачання 21-31 дні (днів)
693+33.26 грн
Мінімальне замовлення: 693
В кошику  од. на суму  грн.
BUZ73AIN Infineon Technologies INFNS13418-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
на замовлення 966 шт:
термін постачання 21-31 дні (днів)
590+36.99 грн
Мінімальне замовлення: 590
В кошику  од. на суму  грн.
BUZ73ALIN Infineon Technologies INFNS13419-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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BUZ73AE3046 Infineon Technologies INFNS11956-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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SN7002NE6327 SN7002NE6327 Infineon Technologies SN7002N.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
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SN7002NH6433XTMA1 SN7002NH6433XTMA1 Infineon Technologies Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SN7002NH6433XTMA1 SN7002NH6433XTMA1 Infineon Technologies Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
20+17.64 грн
32+10.19 грн
100+6.33 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SN7002N E6327 SN7002N E6327 Infineon Technologies SN7002N.pdf Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SN7002N E6433 SN7002N E6433 Infineon Technologies SN7002N.pdf Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SN7002NH6327XTSA1 SN7002NH6327XTSA1 Infineon Technologies Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SN7002NH6327XTSA1 SN7002NH6327XTSA1 Infineon Technologies Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRF1310NSPBF-INF IRF1310NSPBF-INF Infineon Technologies Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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BFP720FH6327XTSA1 BFP720FH6327XTSA1 Infineon Technologies INFNS27662-1.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 4.7V 45GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
11+31.91 грн
16+21.19 грн
25+18.92 грн
100+15.39 грн
250+14.26 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BFN26E6327 BFN26E6327 Infineon Technologies INFNS10738-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
товару немає в наявності
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1ED020I12BTXUMA1 1ED020I12BTXUMA1 Infineon Technologies INFNS19244-1.pdf?t.download=true&u=5oefqw Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
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EVAL1ED020I12B2TOBO1 EVAL1ED020I12B2TOBO1 Infineon Technologies Infineon-Evaluationboard_1ED020I12-B2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a04cf602e5 Description: EVAL BOARD FOR 1ED020I12-B2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED020I12-B2
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+7524.42 грн
В кошику  од. на суму  грн.
BAT6404E6433HTMA1 BAT6404E6433HTMA1 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 23718 шт:
термін постачання 21-31 дні (днів)
22+15.96 грн
38+8.57 грн
100+8.14 грн
500+5.64 грн
1000+4.87 грн
2000+4.45 грн
5000+3.79 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
CY62167EV18LL-55BVI CY62167EV18LL-55BVI Infineon Technologies Infineon-CY62167EV18_MoBL_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe53a531d2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+579.45 грн
В кошику  од. на суму  грн.
CY62167G30-45BVXI CY62167G30-45BVXI Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 4745 шт:
термін постачання 21-31 дні (днів)
1+949.79 грн
10+848.71 грн
25+822.36 грн
50+753.10 грн
100+734.60 грн
480+693.56 грн
В кошику  од. на суму  грн.
IAUS200N08S5N023ATMA1 IAUS200N08S5N023ATMA1 Infineon Technologies IAUS200N08S5N023.pdf Description: MOSFET N-CH 80V 200A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 362 шт:
термін постачання 21-31 дні (днів)
2+325.83 грн
10+207.26 грн
100+146.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCX42E6327 Infineon Technologies INFNS17215-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 125 V
Power - Max: 330 mW
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TLE4241GMXUMA1 TLE4241GMXUMA1 Infineon Technologies Infineon-TLE4241GM-DS-v01_03-EN.pdf?fileId=db3a30431ddc9372011ebaad49bf7f26&ack=t Description: IC LED DRIVER LINEAR PWM 60MA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Dimming: PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 45V
Part Status: Active
на замовлення 3649 шт:
термін постачання 21-31 дні (днів)
5+73.90 грн
10+51.19 грн
25+46.22 грн
100+38.21 грн
250+35.76 грн
500+34.28 грн
1000+32.52 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TLE8250G REEL Infineon Technologies Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda Description: HIGH SPEED CAN-TRANSCEIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
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TLE8250GXUMA1 TLE8250GXUMA1 Infineon Technologies Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda Description: IC TRANSCEIVER HALF 1/1 DSO-8
товару немає в наявності
В кошику  од. на суму  грн.
TLE8250GXUMA1 TLE8250GXUMA1 Infineon Technologies Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda Description: IC TRANSCEIVER HALF 1/1 DSO-8
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CY91F526LKBPMC-GSE1 CY91F526LKBPMC-GSE1 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Obsolete
Number of I/O: 152
товару немає в наявності
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SAK-XC2232N-40F80LAA Infineon Technologies Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
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SPP03N60C3 SPP03N60C3 Infineon Technologies Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 81011 шт:
термін постачання 21-31 дні (днів)
799+29.09 грн
Мінімальне замовлення: 799
В кошику  од. на суму  грн.
IRF7478TRPBF-1 IRF7478TRPBF-1 Infineon Technologies IRF7478PbF-1_11-20-13.pdf Description: MOSFET N-CH 60V 7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
товару немає в наявності
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AUIRFR9024NTRL AUIRFR9024NTRL Infineon Technologies INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BSC112N06LDATMA1 BSC112N06LDATMA1 Infineon Technologies Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
5000+41.71 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC112N06LDATMA1 BSC112N06LDATMA1 Infineon Technologies Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 25966 шт:
термін постачання 21-31 дні (днів)
3+155.36 грн
10+95.50 грн
100+64.71 грн
500+48.37 грн
1000+46.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE4729GXUMA1 TLE4729GXUMA1 Infineon Technologies Infineon-TLE4729G-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a846b425e74d4 Description: IC MTR DRVR BIPOLAR 5V-16V 24DSO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5V ~ 16V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 16V
Supplier Device Package: PG-DSO-24-9
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
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IRL80HS120 IRL80HS120 Infineon Technologies Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191 Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 19669 шт:
термін постачання 21-31 дні (днів)
4+97.41 грн
10+61.30 грн
100+43.63 грн
500+32.05 грн
1000+29.18 грн
2000+26.77 грн
Мінімальне замовлення: 4
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BSP317PL6327 Infineon Technologies INFNS19469-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
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BSP316PL6327 BSP316PL6327 Infineon Technologies INFNS16527-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
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BCR 139L3 E6327 BCR 139L3 E6327 Infineon Technologies BCR139.pdf Description: TRANS PREBIAS NPN 250MW TSLP-3
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BCR 139T E6327 BCR 139T E6327 Infineon Technologies BCR139.pdf Description: TRANS PREBIAS NPN 250MW SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
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BCX52E6237 Infineon Technologies INFNS12465-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
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BCX52E6327 BCX52E6327 Infineon Technologies INFNS12465-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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TDA4862GGEGXUMA2 TDA4862GGEGXUMA2 Infineon Technologies Infineon-TDA4862G-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b427d8ba3cf5 Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 19V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
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KITAURIXTC277TFTTOBO1 KITAURIXTC277TFTTOBO1 Infineon Technologies Infineon-TC2x7_ApplicationKitManual-UM-v01_00-EN.pdf?fileId=5546d46269bda8df0169ca24e3d124cd Description: AURIX APPLICATION KIT TC277 TFT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC277
Platform: AURIX
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+21577.29 грн
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IRFR3504PBF IRFR3504PBF Infineon Technologies IRF%28R%2CU%293504PbF.pdf Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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IRFR3504TRLPBF IRFR3504TRLPBF Infineon Technologies IRF%28R%2CU%293504PbF.pdf Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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BTS282ZE3180ANTMA1 INFNS27932-1.pdf?t.download=true&u=5oefqw
BTS282ZE3180ANTMA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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BTS7741G INFNS25530-1.pdf?t.download=true&u=5oefqw
BTS7741G
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 7A PDSO28
Features: Slew Rate Controlled, Status Flag
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 100mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 7A
Current - Peak Output: 10A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
148+163.13 грн
Мінімальне замовлення: 148
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BTS7750G INFNS03487-1.pdf?t.download=true&u=5oefqw
BTS7750G
Виробник: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Part Status: Active
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AIGB40N65H5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB40N65H5ATMA1
Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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TLI5012BE1000XUMA1 Infineon-TLI5012B+E1000-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014ff423fcd077a8
TLI5012BE1000XUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 125°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2042 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+236.82 грн
5+204.11 грн
10+194.97 грн
25+172.85 грн
50+165.93 грн
100+159.57 грн
500+144.40 грн
1000+140.31 грн
Мінімальне замовлення: 2
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BCM856SH6778 INFNS17175-1.pdf?t.download=true&u=5oefqw
BCM856SH6778
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.19 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPW50R140CPFKSA1 IPW50R140CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42daa4448bf
IPW50R140CPFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 23A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
на замовлення 16681 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
98+221.15 грн
Мінімальне замовлення: 98
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XMC4502-F100F768AB INFNS27688-1.pdf?t.download=true&u=5oefqw
XMC4502-F100F768AB
Виробник: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 20x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, UART/USART, USB, USB OTG
Peripherals: DMA, I²S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
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BTS410E2E3062ANTMA1 INFNS30249-1.pdf?t.download=true&u=5oefqw
BTS410E2E3062ANTMA1
Виробник: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 190mOhm
Input Type: Non-Inverting
Voltage - Load: 4.7V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
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TLE5011FUMA1 TLE5011_Final_Data_Sheet_V2.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30432ee77f32012f0c4368b5110e
TLE5011FUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Last Time Buy
Grade: Automotive
Qualification: AEC-Q100
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TLE5011FUMA1 TLE5011_Final_Data_Sheet_V2.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30432ee77f32012f0c4368b5110e
TLE5011FUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Last Time Buy
Grade: Automotive
Qualification: AEC-Q100
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IR3824MTRPBF IR3824_Rev3.7_3-24-16.pdf
Виробник: Infineon Technologies
Description: IC REG BUCK CTRLR PQFN
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AUIRLR120NTRL INFN-S-A0002298945-1.pdf?t.download=true&u=5oefqw
AUIRLR120NTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BC857CB5000 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857CB5000
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23-3-1
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Qualification: AEC-Q101
на замовлення 540000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8955+2.18 грн
Мінімальне замовлення: 8955
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BUZ73AHXKSA1 INFNS13418-1.pdf?t.download=true&u=5oefqw
BUZ73AHXKSA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
на замовлення 10823 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
489+44.24 грн
Мінімальне замовлення: 489
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BUZ73ALHXKSA1 BUZ73AL_H.pdf
BUZ73ALHXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
на замовлення 5454 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
489+44.24 грн
Мінімальне замовлення: 489
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BUZ73AH3046 INFNS13418-1.pdf?t.download=true&u=5oefqw
BUZ73AH3046
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
на замовлення 12135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
693+33.26 грн
Мінімальне замовлення: 693
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BUZ73AIN INFNS13418-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
на замовлення 966 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
590+36.99 грн
Мінімальне замовлення: 590
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BUZ73ALIN INFNS13419-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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BUZ73AE3046 INFNS11956-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
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SN7002NE6327 SN7002N.pdf?t.download=true&u=5oefqw
SN7002NE6327
Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
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SN7002NH6433XTMA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6433XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SN7002NH6433XTMA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6433XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+17.64 грн
32+10.19 грн
100+6.33 грн
Мінімальне замовлення: 20
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SN7002N E6327 SN7002N.pdf
SN7002N E6327
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SN7002N E6433 SN7002N.pdf
SN7002N E6433
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SN7002NH6327XTSA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SN7002NH6327XTSA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRF1310NSPBF-INF
IRF1310NSPBF-INF
Виробник: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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BFP720FH6327XTSA1 INFNS27662-1.pdf?t.download=true&u=5oefqw
BFP720FH6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 45GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
на замовлення 370 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.91 грн
16+21.19 грн
25+18.92 грн
100+15.39 грн
250+14.26 грн
Мінімальне замовлення: 11
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BFN26E6327 INFNS10738-1.pdf?t.download=true&u=5oefqw
BFN26E6327
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
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1ED020I12BTXUMA1 INFNS19244-1.pdf?t.download=true&u=5oefqw
1ED020I12BTXUMA1
Виробник: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
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EVAL1ED020I12B2TOBO1 Infineon-Evaluationboard_1ED020I12-B2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a04cf602e5
EVAL1ED020I12B2TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED020I12-B2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED020I12-B2
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7524.42 грн
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BAT6404E6433HTMA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT6404E6433HTMA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 23718 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+15.96 грн
38+8.57 грн
100+8.14 грн
500+5.64 грн
1000+4.87 грн
2000+4.45 грн
5000+3.79 грн
Мінімальне замовлення: 22
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CY62167EV18LL-55BVI Infineon-CY62167EV18_MoBL_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe53a531d2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167EV18LL-55BVI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+579.45 грн
В кошику  од. на суму  грн.
CY62167G30-45BVXI Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G30-45BVXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
на замовлення 4745 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+949.79 грн
10+848.71 грн
25+822.36 грн
50+753.10 грн
100+734.60 грн
480+693.56 грн
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IAUS200N08S5N023ATMA1 IAUS200N08S5N023.pdf
IAUS200N08S5N023ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 200A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 362 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+325.83 грн
10+207.26 грн
100+146.73 грн
Мінімальне замовлення: 2
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BCX42E6327 INFNS17215-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 125 V
Power - Max: 330 mW
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TLE4241GMXUMA1 Infineon-TLE4241GM-DS-v01_03-EN.pdf?fileId=db3a30431ddc9372011ebaad49bf7f26&ack=t
TLE4241GMXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER LINEAR PWM 60MA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Dimming: PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 45V
Part Status: Active
на замовлення 3649 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.90 грн
10+51.19 грн
25+46.22 грн
100+38.21 грн
250+35.76 грн
500+34.28 грн
1000+32.52 грн
Мінімальне замовлення: 5
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TLE8250G REEL Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda
Виробник: Infineon Technologies
Description: HIGH SPEED CAN-TRANSCEIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
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TLE8250GXUMA1 Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda
TLE8250GXUMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
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TLE8250GXUMA1 Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda
TLE8250GXUMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
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CY91F526LKBPMC-GSE1 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F526LKBPMC-GSE1
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Obsolete
Number of I/O: 152
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SAK-XC2232N-40F80LAA
Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
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SPP03N60C3 Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b
SPP03N60C3
Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
на замовлення 81011 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
799+29.09 грн
Мінімальне замовлення: 799
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IRF7478TRPBF-1 IRF7478PbF-1_11-20-13.pdf
IRF7478TRPBF-1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
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AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
AUIRFR9024NTRL
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSC112N06LDATMA1 Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6
BSC112N06LDATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+41.71 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC112N06LDATMA1 Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6
BSC112N06LDATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 25966 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+155.36 грн
10+95.50 грн
100+64.71 грн
500+48.37 грн
1000+46.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE4729GXUMA1 Infineon-TLE4729G-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a846b425e74d4
TLE4729GXUMA1
Виробник: Infineon Technologies
Description: IC MTR DRVR BIPOLAR 5V-16V 24DSO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5V ~ 16V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 16V
Supplier Device Package: PG-DSO-24-9
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
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IRL80HS120 Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191
IRL80HS120
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
на замовлення 19669 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.41 грн
10+61.30 грн
100+43.63 грн
500+32.05 грн
1000+29.18 грн
2000+26.77 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSP317PL6327 INFNS19469-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
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BSP316PL6327 INFNS16527-1.pdf?t.download=true&u=5oefqw
BSP316PL6327
Виробник: Infineon Technologies
Description: P-CHANNEL MOSFET
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BCR 139L3 E6327 BCR139.pdf
BCR 139L3 E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSLP-3
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BCR 139T E6327 BCR139.pdf
BCR 139T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
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BCX52E6237 INFNS12465-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
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BCX52E6327 INFNS12465-1.pdf?t.download=true&u=5oefqw
BCX52E6327
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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TDA4862GGEGXUMA2 Infineon-TDA4862G-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b427d8ba3cf5
TDA4862GGEGXUMA2
Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 19V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
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KITAURIXTC277TFTTOBO1 Infineon-TC2x7_ApplicationKitManual-UM-v01_00-EN.pdf?fileId=5546d46269bda8df0169ca24e3d124cd
KITAURIXTC277TFTTOBO1
Виробник: Infineon Technologies
Description: AURIX APPLICATION KIT TC277 TFT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC277
Platform: AURIX
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+21577.29 грн
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IRFR3504PBF IRF%28R%2CU%293504PbF.pdf
IRFR3504PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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IRFR3504TRLPBF IRF%28R%2CU%293504PbF.pdf
IRFR3504TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
товару немає в наявності
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