Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117829) > Сторінка 400 з 1964
| Фото | Назва | Виробник | Інформація |
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IAUC120N04S6L012ATMA1 | Infineon Technologies |
Description: IAUC120N04S6L012ATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5924 шт: термін постачання 21-31 дні (днів) |
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EVAL-IMM101T-046TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IMM101T-046Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IMM101T-046 Supplied Contents: Board(s) Primary Attributes: Motors (BLDC, PMSM) Contents: Board(s) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IPA50R650CEXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 500V 4.6A TO220Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V Power Dissipation (Max): 27.2W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO220-3-FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V |
на замовлення 48571 шт: термін постачання 21-31 дні (днів) |
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| IPA50R650CEZKSA2 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V Power Dissipation (Max): 27.2W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 150µA Supplier Device Package: PG-TO220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPL60R085P7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 39A 4VSONPackaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: PG-VSON-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPL60R085P7AUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 39A 4VSONPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: PG-VSON-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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CY7C2564XV18-450BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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| IRGC100B120UB | Infineon Technologies |
Description: IGBT CHIPPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Supplier Device Package: Die IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 2EDN7224GXTMA1 | Infineon Technologies |
Description: 2EDN7224G - GATE DRIVER Packaging: Bulk Part Status: Active |
на замовлення 233968 шт: термін постачання 21-31 дні (днів) |
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| 2EDN7223FXTMA1 | Infineon Technologies |
Description: POWER SWITCH, TRANSMITTER, REC Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 54508 шт: термін постачання 21-31 дні (днів) |
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XMC1403Q040X0128AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 40VQFNPackaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-40-17 Part Status: Active Number of I/O: 27 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1ED44173N01BXTSA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE SOT23-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 8.6V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-SOT23-6-3 Rise / Fall Time (Typ): 5ns, 5ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 2.6A, 2.6A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 10642 шт: термін постачання 21-31 дні (днів) |
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2ED28073J06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Part Status: Active Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: CMOS, TTL High Side Voltage - Max (Bootstrap): 600 V Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2 V DigiKey Programmable: Not Verified Rise / Fall Time (Typ): 1.5µs, 225ns Current - Peak Output (Source, Sink): 20mA, 80mA |
на замовлення 2434 шт: термін постачання 21-31 дні (днів) |
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TLE5014PROGKITTOBO1 | Infineon Technologies |
Description: EVALUATION BOARD FOR TLE5014Packaging: Box Sensor Type: Magnetic, GMR (Giant Magnetoresistive) Utilized IC / Part: TLE5014 Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BTN7970B | Infineon Technologies |
Description: IC HALF BRIDGE DRVR 70A TO263-7Packaging: Bulk Features: Charge Pump, Status Flag Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 8V ~ 18V Rds On (Typ): 9mOhm LS, 7mOhm HS Applications: General Purpose Current - Output / Channel: 70A Current - Peak Output: 70A Technology: DMOS Voltage - Load: 8V ~ 18V Supplier Device Package: PG-TO263-7-1 Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit Load Type: Inductive Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGP01N120H2XKSA1 | Infineon Technologies |
Description: IGBT 1200V 3.2A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A Supplier Device Package: PG-TO220-3-1 Td (on/off) @ 25°C: 13ns/370ns Switching Energy: 140µJ Test Condition: 800V, 1A, 241Ohm, 15V Gate Charge: 8.6 nC Current - Collector (Ic) (Max): 3.2 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 3.5 A Power - Max: 28 W |
на замовлення 39512 шт: термін постачання 21-31 дні (днів) |
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IGP01N120H2 | Infineon Technologies |
Description: IGBT 1200V 3.2A 28W TO220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A Supplier Device Package: PG-TO220-3-1 Td (on/off) @ 25°C: 13ns/370ns Switching Energy: 140µJ Test Condition: 800V, 1A, 241Ohm, 15V Gate Charge: 8.6 nC Part Status: Active Current - Collector (Ic) (Max): 3.2 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 3.5 A Power - Max: 28 W |
на замовлення 13000 шт: термін постачання 21-31 дні (днів) |
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SIGC76T60R3EX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A Supplier Device Package: Die IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 450 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLS850B0TBV33ATMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V PG-TO263-5-1Packaging: Tape & Reel (TR) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 25 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-5-1 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 63dB (100Hz) Voltage Dropout (Max): 0.6V @ 250mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 33 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TLS850B0TBV33ATMA1 | Infineon Technologies |
Description: IC REG LINEAR 3.3V PG-TO263-5-1Packaging: Cut Tape (CT) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 25 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-5-1 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active PSRR: 63dB (100Hz) Voltage Dropout (Max): 0.6V @ 250mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 33 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1744 шт: термін постачання 21-31 дні (днів) |
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| AUIPS8121RTRLXSMA1 | Infineon Technologies | Description: IR_HSS-LSS-GATEDRIVER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GATELEAD28134XPSA1 | Infineon Technologies | Description: DUMMY 57 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GATELEAD28128HPSA1 | Infineon Technologies | Description: ACCY GATE LEAD FOR MODULE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GATELEAD28129HPSA1 | Infineon Technologies | Description: ACCY GATE LEAD FOR MODULE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GATELEAD28133HPSA1 | Infineon Technologies | Description: ACCY GATE LEAD FOR MODULE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GATELEAD30258HPSA1 | Infineon Technologies | Description: ACCY GATE LEAD FOR MODULE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GATELEADL500G2K2XPSA1 | Infineon Technologies |
Description: ACCY GATE LEAD FOR MODULE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| GATELEADRD406XPSA1 | Infineon Technologies | Description: STD THYR/DIODEN DISC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GATELEADWH406XPSA1 | Infineon Technologies | Description: STD THYR/DIODEN DISC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GATELEADWHBK750XXPSA1 | Infineon Technologies | Description: STD THYR/DIODEN DISC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GATELEADWHBN661XXPSA1 | Infineon Technologies | Description: STD THYR/DIODEN DISC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GATELEADWHBU445XXPSA1 | Infineon Technologies | Description: STD THYR/DIODEN DISC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GATELEADWHRD394XXPSA1 | Infineon Technologies | Description: STD THYR/DIODEN DISC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GATELEADWHRD762XPSA1 | Infineon Technologies | Description: STD THYR/DIODEN DISC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLE4254EJAXUMA2 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 70MA 8DSOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 70mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8-27 Voltage - Output (Min/Fixed): Tracking Control Features: Enable Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 70mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 15 mA Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSZ099N06LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 46A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BSZ099N06LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 46A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
на замовлення 12092 шт: термін постачання 21-31 дні (днів) |
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TLE94613ESXUMA1 | Infineon Technologies |
Description: IC SYST BASIS CHIP TSDSO-24-1Packaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Type: System Basis Chip (SBC) Applications: CAN Supplier Device Package: PG-TSDSO-24-1 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2408 шт: термін постачання 21-31 дні (днів) |
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BC847CB5003 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A PG-SOT23-3-11Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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| PED3264HV1.4 | Infineon Technologies |
Description: SLIC FILTER Packaging: Bulk |
на замовлення 504 шт: термін постачання 21-31 дні (днів) |
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BSL806NL6327 | Infineon Technologies |
Description: SMALL SIGNAL N-CHANNEL MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC22DN20NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 7A TDSON-8-5Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC22DN20NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 7A TDSON-8-5Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V |
на замовлення 7920 шт: термін постачання 21-31 дні (днів) |
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ESD241B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 6VC PGWLL23Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C Applications: General Purpose Capacitance @ Frequency: 6.5pF @ 1GHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: PG-WLL-2-3 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 6V Power - Peak Pulse: 25W Power Line Protection: No Part Status: Active |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ESD241B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 3.3VWM 6VC PGWLL23Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C Applications: General Purpose Capacitance @ Frequency: 6.5pF @ 1GHz Current - Peak Pulse (10/1000µs): 4.5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: PG-WLL-2-3 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 6V Power - Peak Pulse: 25W Power Line Protection: No Part Status: Active |
на замовлення 17183 шт: термін постачання 21-31 дні (днів) |
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| RADAR-LOBSTAR-KIT RTN773 | Infineon Technologies |
Description: RF EVAL KITPackaging: Box Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CY8C3665LTI-199 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 68QFN |
на замовлення 842 шт: термін постачання 21-31 дні (днів) |
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| IRSM505-084DA2 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 4.6A 23DIPPackaging: Bulk Features: Bootstrap Circuit Package / Case: 23-DIP Module Mounting Type: Through Hole Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 340mOhm Applications: AC Motors Current - Output / Channel: 4.6A Current - Peak Output: 15A Technology: UMOS Voltage - Load: 200V (Max) Supplier Device Package: 23-DIPA Fault Protection: UVLO Load Type: Inductive Part Status: Obsolete |
на замовлення 495 шт: термін постачання 21-31 дні (днів) |
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| IRSM505-035PATRBUMA1 | Infineon Technologies |
Description: CIPOS MICRO Packaging: Tape & Reel (TR) Features: Bootstrap Circuit Package / Case: 32-PowerSMD Module, 23 Leads Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 1.8Ohm LS, 1.8Ohm HS Applications: DC Motors, General Purpose Current - Output / Channel: 2.1A Voltage - Load: 13.5V ~ 16.5V Supplier Device Package: 23-SOP Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IRSM515-084DA2-INF | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 4.6A 23DIPPackaging: Bulk Features: Bootstrap Circuit Package / Case: 23-PowerDIP Module (0.748", 19.00mm) Mounting Type: Through Hole Interface: Logic, PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 340mOhm Applications: AC Motors Current - Output / Channel: 4.6A Current - Peak Output: 15A Technology: NMOS Voltage - Load: 200V (Max) Supplier Device Package: 23-DIPA Fault Protection: UVLO Load Type: Inductive, Capacitive, Resistive Part Status: Active |
на замовлення 2160 шт: термін постачання 21-31 дні (днів) |
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IRSM515-065DA | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 2.6A 23DIPPackaging: Bulk Features: Bootstrap Circuit Package / Case: 23-DIP Module Mounting Type: Through Hole Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Rds On (Typ): 1Ohm Applications: AC Motors Current - Output / Channel: 2.6A Current - Peak Output: 15A Technology: UMOS Voltage - Load: 400V (Max) Supplier Device Package: 23-DIP Fault Protection: UVLO Load Type: Inductive |
на замовлення 390 шт: термін постачання 21-31 дні (днів) |
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IRSM515-035PATR | Infineon Technologies |
Description: MICRO MCM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAT68E6327 | Infineon Technologies |
Description: BAT68 - RF MIXER AND DETECTOR SCPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Resistance @ If, F: 10Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 8V Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SLB9635TT12FW316NOXUMA1 | Infineon Technologies |
Description: SECURITY IC'S/AUTHENTICATION IC'Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: LPC Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.3V Applications: Trusted Platform Module (TPM) Core Processor: 16-Bit Supplier Device Package: 28-TSSOP Part Status: Not For New Designs Number of I/O: 2 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLE5014SATELLITETOBO1 | Infineon Technologies |
Description: EVALUATION BOARD FOR TLE5014 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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TLE5014SP16DE0002XUMA1 | Infineon Technologies |
Description: POSITION&CURRENT SENSORSPackaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IPW60R330P6 | Infineon Technologies |
Description: IPW60R330 - 600V COOLMOS N-CHANN Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V Power Dissipation (Max): 93W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 370µA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPW60R330P6FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 12A TO247-3 |
на замовлення 36480 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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IPW60R060C7 | Infineon Technologies |
Description: IPW60R060 - 600V COOLMOS N-CHANNPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Power Dissipation (Max): 162W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPW60R075CPXK | Infineon Technologies |
Description: IPW60R075 - 600V COOLMOS N-CHANNPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.7mA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IAUC120N04S6L012ATMA1 |
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Виробник: Infineon Technologies
Description: IAUC120N04S6L012ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: IAUC120N04S6L012ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5924 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 149.82 грн |
| 10+ | 92.53 грн |
| 100+ | 62.83 грн |
| 500+ | 47.04 грн |
| 1000+ | 45.25 грн |
| EVAL-IMM101T-046TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IMM101T-046
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMM101T-046
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC, PMSM)
Contents: Board(s)
Description: EVAL BOARD FOR IMM101T-046
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IMM101T-046
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC, PMSM)
Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6268.84 грн |
| IPA50R650CEXKSA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.6A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 27.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Description: MOSFET N-CH 500V 4.6A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 27.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
на замовлення 48571 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 644+ | 31.61 грн |
| IPA50R650CEZKSA2 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 27.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 27.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IPL60R085P7AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IPL60R085P7AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 349.05 грн |
| 10+ | 223.73 грн |
| CY7C2564XV18-450BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 4 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5933.12 грн |
| IRGC100B120UB |
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Виробник: Infineon Technologies
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| 2EDN7224GXTMA1 |
Виробник: Infineon Technologies
Description: 2EDN7224G - GATE DRIVER
Packaging: Bulk
Part Status: Active
Description: 2EDN7224G - GATE DRIVER
Packaging: Bulk
Part Status: Active
на замовлення 233968 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 433+ | 51.34 грн |
| 2EDN7223FXTMA1 |
Виробник: Infineon Technologies
Description: POWER SWITCH, TRANSMITTER, REC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: POWER SWITCH, TRANSMITTER, REC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 54508 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 503+ | 44.64 грн |
| XMC1403Q040X0128AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
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| 1ED44173N01BXTSA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8.6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8.6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 10642 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.87 грн |
| 13+ | 24.93 грн |
| 25+ | 22.30 грн |
| 100+ | 18.20 грн |
| 250+ | 16.90 грн |
| 500+ | 16.12 грн |
| 1000+ | 15.22 грн |
| 2ED28073J06FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Part Status: Active
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 1.5µs, 225ns
Current - Peak Output (Source, Sink): 20mA, 80mA
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Part Status: Active
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 600 V
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
DigiKey Programmable: Not Verified
Rise / Fall Time (Typ): 1.5µs, 225ns
Current - Peak Output (Source, Sink): 20mA, 80mA
на замовлення 2434 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.03 грн |
| 10+ | 47.89 грн |
| 25+ | 43.21 грн |
| 100+ | 35.74 грн |
| 250+ | 33.45 грн |
| 500+ | 32.07 грн |
| 1000+ | 30.42 грн |
| TLE5014PROGKITTOBO1 |
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Виробник: Infineon Technologies
Description: EVALUATION BOARD FOR TLE5014
Packaging: Box
Sensor Type: Magnetic, GMR (Giant Magnetoresistive)
Utilized IC / Part: TLE5014
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVALUATION BOARD FOR TLE5014
Packaging: Box
Sensor Type: Magnetic, GMR (Giant Magnetoresistive)
Utilized IC / Part: TLE5014
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6776.34 грн |
| BTN7970B |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 70A TO263-7
Packaging: Bulk
Features: Charge Pump, Status Flag
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Rds On (Typ): 9mOhm LS, 7mOhm HS
Applications: General Purpose
Current - Output / Channel: 70A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRVR 70A TO263-7
Packaging: Bulk
Features: Charge Pump, Status Flag
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Rds On (Typ): 9mOhm LS, 7mOhm HS
Applications: General Purpose
Current - Output / Channel: 70A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
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| IGP01N120H2XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT 1200V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 13ns/370ns
Switching Energy: 140µJ
Test Condition: 800V, 1A, 241Ohm, 15V
Gate Charge: 8.6 nC
Current - Collector (Ic) (Max): 3.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 3.5 A
Power - Max: 28 W
Description: IGBT 1200V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 13ns/370ns
Switching Energy: 140µJ
Test Condition: 800V, 1A, 241Ohm, 15V
Gate Charge: 8.6 nC
Current - Collector (Ic) (Max): 3.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 3.5 A
Power - Max: 28 W
на замовлення 39512 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 346+ | 58.73 грн |
| IGP01N120H2 |
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Виробник: Infineon Technologies
Description: IGBT 1200V 3.2A 28W TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 13ns/370ns
Switching Energy: 140µJ
Test Condition: 800V, 1A, 241Ohm, 15V
Gate Charge: 8.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 3.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 3.5 A
Power - Max: 28 W
Description: IGBT 1200V 3.2A 28W TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 13ns/370ns
Switching Energy: 140µJ
Test Condition: 800V, 1A, 241Ohm, 15V
Gate Charge: 8.6 nC
Part Status: Active
Current - Collector (Ic) (Max): 3.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 3.5 A
Power - Max: 28 W
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 507+ | 42.19 грн |
| SIGC76T60R3EX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
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| TLS850B0TBV33ATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 81.84 грн |
| TLS850B0TBV33ATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1744 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.96 грн |
| 10+ | 109.45 грн |
| 25+ | 99.86 грн |
| 100+ | 83.84 грн |
| 250+ | 79.14 грн |
| 500+ | 76.30 грн |
| AUIPS8121RTRLXSMA1 |
Виробник: Infineon Technologies
Description: IR_HSS-LSS-GATEDRIVER
Description: IR_HSS-LSS-GATEDRIVER
товару немає в наявності
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| GATELEAD28134XPSA1 |
Виробник: Infineon Technologies
Description: DUMMY 57
Description: DUMMY 57
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од. на суму грн.
| GATELEAD28128HPSA1 |
Виробник: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Description: ACCY GATE LEAD FOR MODULE
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| GATELEAD28129HPSA1 |
Виробник: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Description: ACCY GATE LEAD FOR MODULE
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| GATELEAD28133HPSA1 |
Виробник: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Description: ACCY GATE LEAD FOR MODULE
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| GATELEAD30258HPSA1 |
Виробник: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Description: ACCY GATE LEAD FOR MODULE
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| GATELEADL500G2K2XPSA1 |
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Виробник: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Description: ACCY GATE LEAD FOR MODULE
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| GATELEADRD406XPSA1 |
Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC
Description: STD THYR/DIODEN DISC
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| GATELEADWH406XPSA1 |
Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC
Description: STD THYR/DIODEN DISC
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| GATELEADWHBK750XXPSA1 |
Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC
Description: STD THYR/DIODEN DISC
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| GATELEADWHBN661XXPSA1 |
Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC
Description: STD THYR/DIODEN DISC
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| GATELEADWHBU445XXPSA1 |
Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC
Description: STD THYR/DIODEN DISC
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| GATELEADWHRD394XXPSA1 |
Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC
Description: STD THYR/DIODEN DISC
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| GATELEADWHRD762XPSA1 |
Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC
Description: STD THYR/DIODEN DISC
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| TLE4254EJAXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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од. на суму грн.
| BSZ099N06LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 46A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N-CH 60V 46A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 21.77 грн |
| 10000+ | 20.02 грн |
| BSZ099N06LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 46A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N-CH 60V 46A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
на замовлення 12092 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.40 грн |
| 10+ | 61.18 грн |
| 100+ | 40.51 грн |
| 500+ | 29.69 грн |
| 1000+ | 27.01 грн |
| 2000+ | 24.75 грн |
| TLE94613ESXUMA1 |
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Виробник: Infineon Technologies
Description: IC SYST BASIS CHIP TSDSO-24-1
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: System Basis Chip (SBC)
Applications: CAN
Supplier Device Package: PG-TSDSO-24-1
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC SYST BASIS CHIP TSDSO-24-1
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: System Basis Chip (SBC)
Applications: CAN
Supplier Device Package: PG-TSDSO-24-1
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2408 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 213.35 грн |
| 10+ | 153.64 грн |
| 25+ | 140.76 грн |
| 100+ | 118.81 грн |
| 250+ | 112.47 грн |
| 500+ | 110.67 грн |
| BC847CB5003 |
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Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS NPN 45V 0.1A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8955+ | 2.03 грн |
| PED3264HV1.4 |
на замовлення 504 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 92+ | 234.64 грн |
| BSL806NL6327 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Description: SMALL SIGNAL N-CHANNEL MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| BSC22DN20NS3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A TDSON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Description: MOSFET N-CH 200V 7A TDSON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 26.45 грн |
| BSC22DN20NS3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 7A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Description: MOSFET N-CH 200V 7A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
на замовлення 7920 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.70 грн |
| 10+ | 59.82 грн |
| 100+ | 42.37 грн |
| 500+ | 31.18 грн |
| 1000+ | 27.60 грн |
| 2000+ | 26.08 грн |
| ESD241B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 6VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 6VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 1.14 грн |
| ESD241B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 6VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 6VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1GHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
на замовлення 17183 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.06 грн |
| 72+ | 4.23 грн |
| 147+ | 2.06 грн |
| 500+ | 1.81 грн |
| 1000+ | 1.63 грн |
| 2000+ | 1.60 грн |
| 5000+ | 1.55 грн |
| CY8C3665LTI-199 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Description: IC MCU 8BIT 32KB FLASH 68QFN
на замовлення 842 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 49+ | 459.00 грн |
| IRSM505-084DA2 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive
Part Status: Obsolete
на замовлення 495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 66+ | 342.41 грн |
| IRSM505-035PATRBUMA1 |
Виробник: Infineon Technologies
Description: CIPOS MICRO
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 32-PowerSMD Module, 23 Leads
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm LS, 1.8Ohm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2.1A
Voltage - Load: 13.5V ~ 16.5V
Supplier Device Package: 23-SOP
Load Type: Inductive
Part Status: Obsolete
Description: CIPOS MICRO
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 32-PowerSMD Module, 23 Leads
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm LS, 1.8Ohm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2.1A
Voltage - Load: 13.5V ~ 16.5V
Supplier Device Package: 23-SOP
Load Type: Inductive
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IRSM515-084DA2-INF |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: NMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 340mOhm
Applications: AC Motors
Current - Output / Channel: 4.6A
Current - Peak Output: 15A
Technology: NMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIPA
Fault Protection: UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
на замовлення 2160 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 76+ | 298.11 грн |
| IRSM515-065DA |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2.6A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1Ohm
Applications: AC Motors
Current - Output / Channel: 2.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 2.6A 23DIP
Packaging: Bulk
Features: Bootstrap Circuit
Package / Case: 23-DIP Module
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1Ohm
Applications: AC Motors
Current - Output / Channel: 2.6A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
на замовлення 390 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 52+ | 440.78 грн |
| IRSM515-035PATR |
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Виробник: Infineon Technologies
Description: MICRO MCM
Description: MICRO MCM
товару немає в наявності
В кошику
од. на суму грн.
| BAT68E6327 |
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Виробник: Infineon Technologies
Description: BAT68 - RF MIXER AND DETECTOR SC
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: BAT68 - RF MIXER AND DETECTOR SC
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 8V
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
товару немає в наявності
В кошику
од. на суму грн.
| SLB9635TT12FW316NOXUMA1 |
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Виробник: Infineon Technologies
Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: 28-TSSOP
Part Status: Not For New Designs
Number of I/O: 2
DigiKey Programmable: Not Verified
Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: 28-TSSOP
Part Status: Not For New Designs
Number of I/O: 2
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TLE5014SATELLITETOBO1 |
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Виробник: Infineon Technologies
Description: EVALUATION BOARD FOR TLE5014
Description: EVALUATION BOARD FOR TLE5014
на замовлення 3 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TLE5014SP16DE0002XUMA1 |
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Виробник: Infineon Technologies
Description: POSITION&CURRENT SENSORS
Packaging: Tape & Reel (TR)
Part Status: Active
Description: POSITION&CURRENT SENSORS
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| IPW60R330P6 |
Виробник: Infineon Technologies
Description: IPW60R330 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Description: IPW60R330 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IPW60R330P6FKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO247-3
Description: MOSFET N-CH 600V 12A TO247-3
на замовлення 36480 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IPW60R060C7 |
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Виробник: Infineon Technologies
Description: IPW60R060 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
Description: IPW60R060 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
товару немає в наявності
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од. на суму грн.
| IPW60R075CPXK |
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Виробник: Infineon Technologies
Description: IPW60R075 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.7mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 100 V
Description: IPW60R075 - 600V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.7mA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 100 V
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