Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148641) > Сторінка 400 з 2478
Фото | Назва | Виробник | Інформація |
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IPB120N06S4H1ATMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Qualification: AEC-Q101 |
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IAUC120N06S5N017ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 94µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IAUC120N06S5N017ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 94µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 4250 шт: термін постачання 21-31 дні (днів) |
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EVALIMOTION2GOTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: IMC101T Supplied Contents: Board(s) Primary Attributes: Motors (BLDC) Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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IRFH7440TRPBFTR | Infineon Technologies |
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товару немає в наявності |
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SAB-C161PI-LM3V | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 3K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 4x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: EBI/EMI, I²C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-100-2 Part Status: Active Number of I/O: 76 DigiKey Programmable: Not Verified |
на замовлення 147 шт: термін постачання 21-31 дні (днів) |
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SAB-C161O-L25M | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External, Internal Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: P-MQFP-80-1 Part Status: Active Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
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SPD03N60S5XT | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 135µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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PSB21653EV1.4-G | Infineon Technologies |
Description: INCA -IP2 SINGLE-CHIP IP PHONE W Packaging: Bulk Part Status: Active |
на замовлення 429 шт: термін постачання 21-31 дні (днів) |
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IRFR9N20DTR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
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IRFR9N20DTRL | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||||||
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IRFR9N20DTRR | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: D-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
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IRFR9N20DPBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFR9N20DTRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||||||
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TC333LP32F200FAALXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 100-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 248K x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: DMA, I2S, PWM, WDT Peripherals: DMA, I2S, PWM, WDT Supplier Device Package: PG-TQFP-100-23 Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2EDS8265HXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-16-30 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 810 шт: термін постачання 21-31 дні (днів) |
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IPL60R065C7AUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-VSON-4-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V |
на замовлення 5100 шт: термін постачання 21-31 дні (днів) |
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IRF6811STR1PBF | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IGD15N65T6ARMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 230µJ (on), 110µJ (off) Test Condition: 400V, 11.5A, 47Ohm, 15V Gate Charge: 37 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 57.5 A Power - Max: 100 W |
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IGD15N65T6ARMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/117ns Switching Energy: 230µJ (on), 110µJ (off) Test Condition: 400V, 11.5A, 47Ohm, 15V Gate Charge: 37 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 57.5 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AIGB15N65H5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Td (on/off) @ 25°C: 24ns/22ns Switching Energy: 160µJ (on), 40µJ (off) Test Condition: 400V, 7.5A, 39Ohm, 15V Gate Charge: 40 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 105 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 958 шт: термін постачання 21-31 дні (днів) |
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AIKB15N65DH5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Not For New Designs Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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AIKB15N65DF5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Not For New Designs Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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PEF2260NV3.0SICOFI | Infineon Technologies | Description: SICOFI CODEC FILTER |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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2EDF7175FXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-16-11 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 1A, 2A DigiKey Programmable: Not Verified |
на замовлення 8431 шт: термін постачання 21-31 дні (днів) |
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2EDS8165HXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-16-30 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 1A, 2A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 700 шт: термін постачання 21-31 дні (днів) |
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2EDF7275FXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1500 V Supplier Device Package: PG-DSO-16-11 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: -, 1.65V Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 11030 шт: термін постачання 21-31 дні (днів) |
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SPB10N10 G | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BFR182E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12dB ~ 18dB Power - Max: 250mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT23 Part Status: Active |
на замовлення 79170 шт: термін постачання 21-31 дні (днів) |
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IRFR7746PBF-INF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V |
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BSC120N03LSG | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB120N03S4L03ATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 40µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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BSC074N15NS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 136µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V |
на замовлення 3181 шт: термін постачання 21-31 дні (днів) |
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PTAB182002TCV2XWSA1 | Infineon Technologies | Description: IC RF FET LDMOS 190W H-49248H-4 |
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В кошику од. на суму грн. | |||||||||||||||||
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REFENGCOOLFAN1KWTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Power Supply Type: Power Management Contents: Board(s) Supplied Contents: Board(s) Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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S2GO3DTLI493DW2BWA0TOBO1 | Infineon Technologies |
![]() Packaging: Bulk Interface: I2C Voltage - Supply: 2.8V ~ 3.5V Sensor Type: Hall Effect Utilized IC / Part: TLI493D Supplied Contents: Board(s) Embedded: Yes Sensing Range: ±160mT Part Status: Active |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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TLE42062GXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 8V ~ 18V Technology: Bipolar Voltage - Load: 8V ~ 18V Supplier Device Package: PG-DSO-14 Motor Type - AC, DC: Servo DC Grade: Automotive Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE42062GXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 8V ~ 18V Technology: Bipolar Voltage - Load: 8V ~ 18V Supplier Device Package: PG-DSO-14 Motor Type - AC, DC: Servo DC Grade: Automotive Part Status: Active |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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BSP296NH6433XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 100µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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BSP296NH6433XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 100µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13094 шт: термін постачання 21-31 дні (днів) |
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62-1039PBF | Infineon Technologies |
Description: IC MOSFET Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BAT17-05WH6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAT17-05E6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT17-06WE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BAT17-06WH6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Common Anode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BAT-17-07 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-253-4, TO-253AA Diode Type: Schottky - 2 Independent Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT143-4 Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAT1707E6327HTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Diode Type: Schottky - 2 Independent Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT-143-3D Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
на замовлення 5636 шт: термін постачання 21-31 дні (днів) |
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BAT17E6327 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BAT1707E6327 | Infineon Technologies |
Description: MIXER DIODE, VHF TO UHF Packaging: Bulk Part Status: Active Package / Case: TO-253-4, TO-253AA Diode Type: Schottky - 2 Independent Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT-143-3D Current - Max: 130 mA Power Dissipation (Max): 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BSM200GA120DN2FS | Infineon Technologies |
Description: IGBT MODULE Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DD89N16KKHPSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLF11251EPXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 2.35V ~ 7V Input Type: Non-Inverting Supplier Device Package: PG-TSDSO-14-5 Rise / Fall Time (Typ): 60ns, 60ns Channel Type: Single Driven Configuration: Half-Bridge Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 2.31V, 4.69V Current - Peak Output (Source, Sink): 2.5A, 2.5A Grade: Automotive Part Status: Active DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 4609 шт: термін постачання 21-31 дні (днів) |
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TDA5201 | Infineon Technologies |
![]() Features: RSSI Equipped Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Sensitivity: -113dBm Mounting Type: Surface Mount Frequency: 315MHz ~ 345MHz Modulation or Protocol: ASK Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Applications: Alarm Systems, Communication Systems, Remote Control Systems Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-28 Part Status: Active |
на замовлення 40048 шт: термін постачання 21-31 дні (днів) |
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TDA5201GEG | Infineon Technologies |
![]() Features: RSSI Equipped Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Sensitivity: -113dBm Mounting Type: Surface Mount Frequency: 315MHz ~ 345MHz Modulation or Protocol: ASK Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Applications: Alarm Systems, Communication Systems Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-28 Part Status: Active |
на замовлення 425 шт: термін постачання 21-31 дні (днів) |
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PEF 80902 H V1.1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 44-QFP Mounting Type: Surface Mount Function: Second Generation Modular Interface: ISDN Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3.3V Supplier Device Package: P-MQFP-44 Part Status: Obsolete Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS16E6393 | Infineon Technologies |
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на замовлення 144000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BAS16E6433HTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 1579186 шт: термін постачання 21-31 дні (днів) |
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BGS12P2L6E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: GSM, LTE, W-CDMA Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.4V Insertion Loss: 0.51dB Frequency Range: 50MHz ~ 6GHz Test Frequency: 5.925GHz Isolation: 27dB Supplier Device Package: PG-TSLP-6-4 IIP3: 74dBm |
на замовлення 70801 шт: термін постачання 21-31 дні (днів) |
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IRS26072DSTRPBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 150ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Part Status: Obsolete DigiKey Programmable: Not Verified |
на замовлення 14705 шт: термін постачання 21-31 дні (днів) |
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IRS2609DSTRPBF-INF | Infineon Technologies |
Description: IRS2609D - HALF-BRIDGE DRIVER Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 150ns, 50ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 200mA, 350mA Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
IPB120N06S4H1ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
IAUC120N06S5N017ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
IAUC120N06S5N017ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
на замовлення 4250 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 191.79 грн |
10+ | 115.33 грн |
100+ | 95.17 грн |
500+ | 72.87 грн |
1000+ | 66.87 грн |
2000+ | 63.77 грн |
EVALIMOTION2GOTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IMC101T
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMC101T
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Part Status: Active
Description: EVAL BOARD FOR IMC101T
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMC101T
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1760.33 грн |
IRFH7440TRPBFTR |
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Виробник: Infineon Technologies
Description: IRFH7440 - 12V-300V N-CHANNEL PO
Description: IRFH7440 - 12V-300V N-CHANNEL PO
товару немає в наявності
В кошику
од. на суму грн.
SAB-C161PI-LM3V |
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Виробник: Infineon Technologies
Description: SAB-C161PI-LF 3V CA - LEGACY 16-
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: SAB-C161PI-LF 3V CA - LEGACY 16-
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
на замовлення 147 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
50+ | 441.23 грн |
SAB-C161O-L25M |
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Виробник: Infineon Technologies
Description: SAB-C161O-L25M HA - LEGACY 16-BI
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: SAB-C161O-L25M HA - LEGACY 16-BI
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 850 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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28+ | 836.85 грн |
SPD03N60S5XT |
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Виробник: Infineon Technologies
Description: SPD03N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Description: SPD03N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
611+ | 38.99 грн |
PSB21653EV1.4-G |
Виробник: Infineon Technologies
Description: INCA -IP2 SINGLE-CHIP IP PHONE W
Packaging: Bulk
Part Status: Active
Description: INCA -IP2 SINGLE-CHIP IP PHONE W
Packaging: Bulk
Part Status: Active
на замовлення 429 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 3473.48 грн |
IRFR9N20DTR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
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IRFR9N20DTRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
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IRFR9N20DTRR |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
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IRFR9N20DPBF | ![]() |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
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IRFR9N20DTRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Description: MOSFET N-CH 200V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
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TC333LP32F200FAALXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
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2EDS8265HXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 810 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 256.25 грн |
10+ | 185.91 грн |
25+ | 170.59 грн |
100+ | 144.31 грн |
250+ | 136.78 грн |
500+ | 132.25 грн |
IPL60R065C7AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
Description: MOSFET HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
на замовлення 5100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 481.46 грн |
10+ | 328.83 грн |
100+ | 249.09 грн |
500+ | 225.35 грн |
IRF6811STR1PBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 25V 19A DIRECTFET
Description: MOSFET N CH 25V 19A DIRECTFET
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IGD15N65T6ARMA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
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IGD15N65T6ARMA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
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AIGB15N65H5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 958 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 294.45 грн |
10+ | 186.22 грн |
100+ | 130.91 грн |
500+ | 110.38 грн |
AIKB15N65DH5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 348.56 грн |
10+ | 222.31 грн |
100+ | 157.93 грн |
500+ | 138.74 грн |
AIKB15N65DF5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 348.56 грн |
PEF2260NV3.0SICOFI |
Виробник: Infineon Technologies
Description: SICOFI CODEC FILTER
Description: SICOFI CODEC FILTER
на замовлення 90 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 1244.92 грн |
2EDF7175FXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
на замовлення 8431 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 195.77 грн |
10+ | 140.24 грн |
25+ | 128.19 грн |
100+ | 107.86 грн |
250+ | 101.93 грн |
500+ | 98.36 грн |
1000+ | 93.85 грн |
2EDS8165HXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 700 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 165.53 грн |
10+ | 117.94 грн |
25+ | 107.65 грн |
100+ | 90.36 грн |
250+ | 85.28 грн |
500+ | 82.22 грн |
2EDF7275FXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 11030 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 182.24 грн |
10+ | 130.05 грн |
25+ | 118.84 грн |
100+ | 99.92 грн |
250+ | 94.39 грн |
500+ | 91.06 грн |
1000+ | 86.87 грн |
SPB10N10 G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 10.3A TO263-3
Description: MOSFET N-CH 100V 10.3A TO263-3
товару немає в наявності
В кошику
од. на суму грн.
BFR182E6327 |
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Виробник: Infineon Technologies
Description: BFR182 - LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
Description: BFR182 - LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 79170 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3480+ | 7.16 грн |
IRFR7746PBF-INF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 56A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
Description: MOSFET N-CH 75V 56A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
BSC120N03LSG |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Description: POWER FIELD-EFFECT TRANSISTOR, 1
товару немає в наявності
В кошику
од. на суму грн.
IPB120N03S4L03ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
286+ | 79.67 грн |
BSC074N15NS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 114A TSON-8-3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 136µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Description: MOSFET N-CH 150V 114A TSON-8-3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 136µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
на замовлення 3181 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 444.06 грн |
10+ | 286.23 грн |
100+ | 205.98 грн |
500+ | 161.19 грн |
1000+ | 155.24 грн |
PTAB182002TCV2XWSA1 |
Виробник: Infineon Technologies
Description: IC RF FET LDMOS 190W H-49248H-4
Description: IC RF FET LDMOS 190W H-49248H-4
товару немає в наявності
В кошику
од. на суму грн.
REFENGCOOLFAN1KWTOBO1 |
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Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Function: Power Supply
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Part Status: Active
Description: DEV KIT
Packaging: Bulk
Function: Power Supply
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 66487.51 грн |
S2GO3DTLI493DW2BWA0TOBO1 |
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Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Hall Effect
Utilized IC / Part: TLI493D
Supplied Contents: Board(s)
Embedded: Yes
Sensing Range: ±160mT
Part Status: Active
Description: DEV KIT
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Hall Effect
Utilized IC / Part: TLI493D
Supplied Contents: Board(s)
Embedded: Yes
Sensing Range: ±160mT
Part Status: Active
на замовлення 41 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1064.00 грн |
TLE42062GXUMA2 |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 70.63 грн |
TLE42062GXUMA2 |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
Description: IC MOTOR DRIVER 8V-18V 14DSO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DSO-14
Motor Type - AC, DC: Servo DC
Grade: Automotive
Part Status: Active
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 152.80 грн |
10+ | 108.44 грн |
25+ | 98.92 грн |
100+ | 82.98 грн |
250+ | 78.28 грн |
500+ | 75.45 грн |
1000+ | 71.92 грн |
BSP296NH6433XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 18.50 грн |
8000+ | 16.08 грн |
BSP296NH6433XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13094 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 77.19 грн |
10+ | 46.36 грн |
100+ | 30.36 грн |
500+ | 22.03 грн |
1000+ | 19.95 грн |
2000+ | 18.19 грн |
BAT17-05WH6327 |
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Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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BAT17-05E6327HTSA1 |
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Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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BAT17-06WE6327 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 4V 150MW SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3406+ | 6.61 грн |
BAT17-06WH6327 |
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Виробник: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Grade: Automotive
Qualification: AEC-Q101
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4157+ | 5.08 грн |
BAT-17-07 |
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Виробник: Infineon Technologies
Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT143-4
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT143-4
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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BAT1707E6327HTSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 5636 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 24.67 грн |
19+ | 16.40 грн |
25+ | 14.56 грн |
100+ | 11.77 грн |
250+ | 10.87 грн |
500+ | 10.33 грн |
1000+ | 9.72 грн |
BAT17E6327 |
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Виробник: Infineon Technologies
Description: BAT17 - RF MIXER AND DETECTOR SC
Description: BAT17 - RF MIXER AND DETECTOR SC
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BAT1707E6327 |
Виробник: Infineon Technologies
Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Part Status: Active
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Part Status: Active
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
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DD89N16KKHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARRAY MOD 1200V 140A
Description: DIODE ARRAY MOD 1200V 140A
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од. на суму грн.
TLF11251EPXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSDSO-14-5
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC GATE DRVR HALF-BRIDGE 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSDSO-14-5
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4609 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 210.89 грн |
10+ | 151.43 грн |
25+ | 138.55 грн |
100+ | 116.74 грн |
250+ | 110.40 грн |
500+ | 106.58 грн |
1000+ | 101.74 грн |
TDA5201 |
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Виробник: Infineon Technologies
Description: ASK SINGLE CONVERSION RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
Description: ASK SINGLE CONVERSION RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
на замовлення 40048 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
213+ | 103.50 грн |
TDA5201GEG |
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Виробник: Infineon Technologies
Description: ASK SINGLE CONVERSION RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
Description: ASK SINGLE CONVERSION RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
на замовлення 425 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
180+ | 121.17 грн |
PEF 80902 H V1.1 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: Second Generation Modular
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 1
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: Second Generation Modular
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 1
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BAS16E6393 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BAS16E6433HTMA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1579186 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12878+ | 1.52 грн |
BGS12P2L6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 0.51dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 27dB
Supplier Device Package: PG-TSLP-6-4
IIP3: 74dBm
Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 0.51dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 27dB
Supplier Device Package: PG-TSLP-6-4
IIP3: 74dBm
на замовлення 70801 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 26.26 грн |
15+ | 21.61 грн |
25+ | 20.35 грн |
100+ | 17.46 грн |
250+ | 16.47 грн |
500+ | 15.78 грн |
1000+ | 14.87 грн |
5000+ | 13.50 грн |
IRS26072DSTRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 14705 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
270+ | 84.22 грн |
IRS2609DSTRPBF-INF |
Виробник: Infineon Technologies
Description: IRS2609D - HALF-BRIDGE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IRS2609D - HALF-BRIDGE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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од. на суму грн.