Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149760) > Сторінка 402 з 2496
| Фото | Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||||
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|   | BTS247Z | Infineon Technologies |  Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | на замовлення 12634 шт:термін постачання 21-31 дні (днів) | 
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|   | BTS247ZE3062ANTMA1 | Infineon Technologies |  Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 2V @ 90µA Supplier Device Package: PG-TO263-5-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V | на замовлення 80650 шт:термін постачання 21-31 дні (днів) | 
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|   | IPP60R600P6 | Infineon Technologies |  Description: POWER FIELD-EFFECT TRANSISTOR, 6 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| FF150R12KS4B2HOSA1 | Infineon Technologies |  Description: FF150R12 - IGBT MODULE | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | IPG20N06S2L-35AATMA1 | Infineon Technologies |  Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|  | IKZA75N65RH5XKSA1 | Infineon Technologies |  Description: IGBT TRENCH FS 650V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/180ns Switching Energy: 310µJ (on), 300µJ (off) Test Condition: 400V, 37.5A, 9Ohm, 15V Gate Charge: 168 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W | на замовлення 49 шт:термін постачання 21-31 дні (днів) | 
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|   | CYD09S72V18-167BBXC | Infineon Technologies |  Description: IC SRAM 9MBIT PAR 167MHZ 256FBGA Packaging: Tray Package / Case: 256-LBGA Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V Technology: SRAM - Dual Port, Synchronous Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 256-FBGA (17x17) Part Status: Obsolete Memory Interface: Parallel Access Time: 4 ns Memory Organization: 128K x 72 DigiKey Programmable: Not Verified | на замовлення 2 шт:термін постачання 21-31 дні (днів) | 
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| T730N42TOFVTXPSA1 | Infineon Technologies |  Description: SCR MODULE 4200V 1840A DO200AC | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|  | XDPL8220XUMA1 | Infineon Technologies |  Description: IC LED DRIVER OFFL PWM 16DSO Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 50MHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 85°C (TA) Internal Switch(s): No Topology: Flyback Supplier Device Package: PG-DSO-16 Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 24V | на замовлення 62500 шт:термін постачання 21-31 дні (днів) | 
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| IRGC10B60KB | Infineon Technologies |  Description: IGBT CHIP Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 2A Supplier Device Package: Die IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | IPLK60R1K5PFD7ATMA1 | Infineon Technologies |  Description: MOSFET N-CH 600V 3.8A THIN-PAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 40µA Supplier Device Package: PG-TDSON-8-52 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IPLK60R600PFD7ATMA1 | Infineon Technologies |  Description: MOSFET N-CH 600V 7A THIN-PAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 80µA Supplier Device Package: PG-TDSON-8-52 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IPD60R1K5PFD7SAUMA1 | Infineon Technologies |  Description: MOSFET N-CH 600V 3.6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 40µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | XDPS21081XUMA1 | Infineon Technologies |  Description: XDP SMPS TV/PC Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 23kHz ~ 139.1kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V Supplier Device Package: PG-DSO-12-20 Synchronous Rectifier: No Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start Output Phases: 1 Clock Sync: No Part Status: Not For New Designs Number of Outputs: 1 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IPDD60R170CFD7XTMA1 | Infineon Technologies |  Description: MOSFET N-CH 600V 19A HDSOP-10 Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 240µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V | на замовлення 25 шт:термін постачання 21-31 дні (днів) | 
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|   | KP212K1409XTMA1 | Infineon Technologies |  Description: SENSOR 16.68PSIA 4.65V DSOF8 Packaging: Cut Tape (CT) Features: Amplified Output, Temperature Compensated Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.4 V ~ 4.65 V Operating Pressure: 1.45PSI ~ 16.68PSI (10kPa ~ 115kPa) Pressure Type: Absolute Accuracy: ±0.3PSI (±2.07kPa) Operating Temperature: -40°C ~ 125°C (TA) Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Maximum Pressure: 21.76PSI (150kPa) Grade: Automotive Qualification: AEC-Q100 | на замовлення 1447 шт:термін постачання 21-31 дні (днів) | 
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|   | KP212F1701XTMA1 | Infineon Technologies |  Description: SENSOR 16.68PSIA 4.5V DSOF8 Packaging: Cut Tape (CT) Features: Amplified Output, Temperature Compensated Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.5 V ~ 4.5 V Operating Pressure: 2.18PSI ~ 16.68PSI (15kPa ~ 115kPa) Pressure Type: Absolute Accuracy: ±0.29PSI (±2kPa) Operating Temperature: -40°C ~ 125°C (TA) Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Maximum Pressure: 21.76PSI (150kPa) Part Status: Active Grade: Automotive Qualification: AEC-Q100 | на замовлення 177 шт:термін постачання 21-31 дні (днів) | 
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|   | TC377TP96F300SAAKXUMA1 | Infineon Technologies |  Description: IC MCU 32BIT 6MB FLASH 292LFBGA Packaging: Cut Tape (CT) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 6MB (6M x 8) RAM Size: 1.1M x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT Peripherals: DMA, I2S, PWM, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active DigiKey Programmable: Not Verified | на замовлення 855 шт:термін постачання 21-31 дні (днів) | 
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|   | BSZ0910LSATMA1 | Infineon Technologies |  Description: MOSFET N-CH 30V 18A/40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 2.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BSZ0910LSATMA1 | Infineon Technologies |  Description: MOSFET N-CH 30V 18A/40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Power Dissipation (Max): 2.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | TLI4971A050T5UE0001XUMA1 | Infineon Technologies |  Description: CURRENT SEN HE/OL 50A PG-TISON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 24mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 50A Supplier Device Package: PG-TISON-8-5 Part Status: Active Number of Channels: 1 Grade: Automotive Qualification: AEC-Q100 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | TLI4971A025T5UE0001XUMA1 | Infineon Technologies |  Description: CURRENT SEN HE/OL 25A PG-TISON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 48mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 25A Supplier Device Package: PG-TISON-8-5 Part Status: Active Number of Channels: 1 Grade: Automotive Qualification: AEC-Q100 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | LITELDOSBCV33BOARDTOBO1 | Infineon Technologies |  Description: EVAL BOARD FOR TLE9461-3ES Packaging: Box Function: System Basis Chip (SBC) Type: Interface Contents: Board(s) Utilized IC / Part: TLE9461-3ES | на замовлення 1 шт:термін постачання 21-31 дні (днів) | 
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| TT104N08KOFHPSA1 | Infineon Technologies |  Description: SCR MODULE 800V 160A MODULE | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| TT104N12KOFHPSA1 | Infineon Technologies |  Description: SCR MODULE 1.2KV 160A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.2 kV | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| TT104N12KOFAHPSA1 | Infineon Technologies |  Description: SCR MODULE 1.2KV 160A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C Structure: Common Anode - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.2 kV | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| TT104N12KOFKHPSA1 | Infineon Technologies |  Description: SCR MODULE 1.2KV 160A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C Structure: Common Cathode - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.2 kV | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | CY2XF33LXC533T | Infineon Technologies |  Description: TSBU | на замовлення 173 шт:термін постачання 21-31 дні (днів) | 
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|   | IKW40N65RH5XKSA1 | Infineon Technologies |  Description: IGBT TRENCH FS 650V 74A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/165ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 250 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|  | IKW40N65H5 | Infineon Technologies |  Description: IGBT 650V 74A 255W PG-TO247-3 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BSP324L6327 | Infineon Technologies |  Description: N-CHANNEL  POWER MOSFET Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 94µA Supplier Device Package: PG-SOT223-4-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V | на замовлення 80249 шт:термін постачання 21-31 дні (днів) | 
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|   | BSP324 E6327 | Infineon Technologies |  Description: MOSFET N-CH 400V 170MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 94µA Supplier Device Package: PG-SOT223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BCR401RE6433HTMA1 | Infineon Technologies |  Description: IC LED DRVR LIN 60MA SOT143R-3D Packaging: Bulk Package / Case: SOT-143R Voltage - Output: 16V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: 150°C (TJ) Applications: Lighting Current - Output / Channel: 60mA Internal Switch(s): Yes Supplier Device Package: PG-SOT-143R-3D Voltage - Supply (Min): 1.2V Voltage - Supply (Max): 18V | на замовлення 2000 шт:термін постачання 21-31 дні (днів) | 
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|   | TLE49452LHALA1 | Infineon Technologies |  Description: MAGNETIC SWITCH BIPOLAR 3SSO Packaging: Cut Tape (CT) Features: Temperature Compensated Output Type: Open Collector Polarization: North Pole, South Pole Function: Bipolar Switch Operating Temperature: -40°C ~ 150°C Voltage - Supply: 3.8V ~ 24V Technology: Hall Effect Sensing Range: ±3mT Trip, ±6mT Release Current - Output (Max): 100mA Current - Supply (Max): 8mA Test Condition: 25°C Part Status: Last Time Buy | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | 1ED3860MU12MXUMA1 | Infineon Technologies |  Description: DIGITAL ISO 1CH GT DVR DSO16-28 Packaging: Tape & Reel (TR) Package / Case: 16-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6A Technology: Magnetic Coupling Approval Agency: UL, VDE Supplier Device Package: PG-DSO-16-28 Rise / Fall Time (Typ): 15ns, 15ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 13V ~ 25V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | 1ED3860MU12MXUMA1 | Infineon Technologies |  Description: DIGITAL ISO 1CH GT DVR DSO16-28 Packaging: Cut Tape (CT) Package / Case: 16-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 6A Technology: Magnetic Coupling Approval Agency: UL, VDE Supplier Device Package: PG-DSO-16-28 Rise / Fall Time (Typ): 15ns, 15ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 13V ~ 25V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | XDPS21081XUMA1 | Infineon Technologies |  Description: XDP SMPS TV/PC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 23kHz ~ 139.1kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V Supplier Device Package: PG-DSO-12-20 Synchronous Rectifier: No Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start Output Phases: 1 Clock Sync: No Part Status: Not For New Designs Number of Outputs: 1 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| TLE5027CE6747HAMA3 | Infineon Technologies |  Description: SENSOR MAGNETORESISTIVE PWM 3SIP | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| TLE5027CE6747HAMA4 | Infineon Technologies |  Description: SENSOR MAGNETORESISTIVE PWM 3SIP Packaging: Tape & Box (TB) Package / Case: 3-SSIP Module Output Type: PWM Mounting Type: Through Hole Axis: X, Y, Z Operating Temperature: -40°C ~ 175°C (TJ) Technology: Magnetoresistive Supplier Device Package: PG-SSO-3-92 Part Status: Obsolete Grade: Automotive Qualification: AEC-Q100 | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | TLE5027CXAAD47AGXAMA1 | Infineon Technologies | Description: SENSOR MAGNETORESISTIVE PWM 3SIP Packaging: Tape & Box (TB) Package / Case: 3-SSIP Module Output Type: PWM Mounting Type: Through Hole Axis: X, Y, Z Operating Temperature: -40°C ~ 175°C (TJ) Technology: Magnetoresistive Supplier Device Package: PG-SSO-3-92 Part Status: Obsolete Grade: Automotive Qualification: AEC-Q100 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| FF150R12KE3B8BDLA1 | Infineon Technologies |  Description: IGBT MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A NTC Thermistor: No Supplier Device Package: AG-62MM Part Status: Active Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1250 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 11 nF @ 25 V | на замовлення 33 шт:термін постачання 21-31 дні (днів) | 
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| FF150R12ME3G | Infineon Technologies |  Description: IGBT MODULE 1200V 200A 695W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD-3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 695 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V | на замовлення 351 шт:термін постачання 21-31 дні (днів) | 
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|   | FF150R12ME3GBOSA1 | Infineon Technologies |  Description: IGBT MOD 1200V 200A 695W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 695 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V | на замовлення 783 шт:термін постачання 21-31 дні (днів) | 
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| FF150R12KE3B8BOSA1 | Infineon Technologies | Description: MOD IGBT LOW PWR ECONO2-6 | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| PBL38630/2SOTR2B | Infineon Technologies | Description: FLEXISLIC SLIC | на замовлення 1800 шт:термін постачання 21-31 дні (днів) | 
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|   | BFP410H6327XTSA1 | Infineon Technologies |  Description: RF TRANS NPN 5V 25GHZ SOT-343 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21.5dB Power - Max: 150mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Active | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | BFP410H6327XTSA1 | Infineon Technologies |  Description: RF TRANS NPN 5V 25GHZ SOT-343 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21.5dB Power - Max: 150mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Supplier Device Package: PG-SOT343-4-2 Part Status: Active | на замовлення 2888 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||
| TT142N12KOFHPSA1 | Infineon Technologies |  Description: SCR MODULE 1.2KV 230A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 142 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.2 kV | на замовлення 10 шт:термін постачання 21-31 дні (днів) | 
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| MB4239PFV-GT-BND-ER-6E1 | Infineon Technologies | Description: IC PWR SUPPLY MONITOR 16SSOP Packaging: Tape & Reel (TR) | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| MB4237PFV-GT-BND-ERE1 | Infineon Technologies | Description: IC PWR SUPPLY MONITOR 24SSOP Packaging: Tape & Reel (TR) | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| MB3789APFV-GT-BND-ERE1 | Infineon Technologies | Description: IC SUPERVISOR ANALOG 16SSOP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| MB4243PFV-GT-BNDE1 | Infineon Technologies | Description: IC POWER MANAGEMENT 48LQFP Packaging: Tray | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | TLE493D-W2B6 3D-MS2GO | Infineon Technologies |  Description: TLE493D-W2B6 3D MAG SENSOR 2GO | на замовлення 15 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||
|   | TLE493DA2B6MS2GOTOBO1 | Infineon Technologies |  Description: SENSOR HALL EFFECT I2C 2GO Packaging: Bulk Interface: I2C, Serial Voltage - Supply: 2.8V ~ 3.5V Sensor Type: Magnetic, Linear, Rotary Position Utilized IC / Part: TLE493D-A2B6 Supplied Contents: Board(s) Sensing Range: ±160mT ~ ±230mT Contents: Board(s) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | TLE493DA1B6HTSA1 | Infineon Technologies |  Description: IC 3D MAGN SENSOR TSOP6-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.9V ~ 3.5V Technology: Hall Effect Sensing Range: ±60mT Supplier Device Package: PG-TSOP-6-6-5 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | IPU60R2K1CEAKMA1 | Infineon Technologies |  Description: CONSUMER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| CYRF6936-XC | Infineon Technologies | Description: IC SOC WIRELESS USB Packaging: Bulk DigiKey Programmable: Not Verified | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
|   | ESD145B1W01005E6327XTSA1 | Infineon Technologies |  Description: TVS DIODE 18VWM 5VC P/PGWLL22 Packaging: Tape & Reel (TR) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: RF Antenna Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.5A (8/20µs) Voltage - Reverse Standoff (Typ): 18V (Max) Supplier Device Package: P/PG-WLL-2-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 18.5V Voltage - Clamping (Max) @ Ipp: 5V (Typ) Power - Peak Pulse: 21W Power Line Protection: No Part Status: Active | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
|   | ESD145B1W01005E6327XTSA1 | Infineon Technologies |  Description: TVS DIODE 18VWM 5VC P/PGWLL22 Packaging: Cut Tape (CT) Package / Case: 01005 (0402 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: RF Antenna Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.5A (8/20µs) Voltage - Reverse Standoff (Typ): 18V (Max) Supplier Device Package: P/PG-WLL-2-2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 18.5V Voltage - Clamping (Max) @ Ipp: 5V (Typ) Power - Peak Pulse: 21W Power Line Protection: No Part Status: Active | на замовлення 2714 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||
|   | IMBG120R220M1HXTMA1 | Infineon Technologies |  Description: SICFET N-CH 1.2KV 13A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V | на замовлення 1044 шт:термін постачання 21-31 дні (днів) | 
 | 
| BTS247Z |  | 
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 12634 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 237+ | 99.90 грн | 
| BTS247ZE3062ANTMA1 |  | 
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-5-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2V @ 90µA
Supplier Device Package: PG-TO263-5-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
на замовлення 80650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 113+ | 210.02 грн | 
| IPP60R600P6 |  | 
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
    Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| FF150R12KS4B2HOSA1 |  | 
Виробник: Infineon Technologies
Description: FF150R12 - IGBT MODULE
    Description: FF150R12 - IGBT MODULE
товару немає в наявності
    В кошику
     од. на суму     грн.
| IPG20N06S2L-35AATMA1 |  | 
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 27µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
товару немає в наявності
    В кошику
     од. на суму     грн.
| IKZA75N65RH5XKSA1 |  | 
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
    Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
на замовлення 49 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 695.57 грн | 
| 30+ | 395.65 грн | 
| CYD09S72V18-167BBXC |  | 
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PAR 167MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 256-FBGA (17x17)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 72
DigiKey Programmable: Not Verified
    Description: IC SRAM 9MBIT PAR 167MHZ 256FBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 256-FBGA (17x17)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 128K x 72
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 18943.07 грн | 
| T730N42TOFVTXPSA1 |  | 
Виробник: Infineon Technologies
Description: SCR MODULE 4200V 1840A DO200AC
    Description: SCR MODULE 4200V 1840A DO200AC
товару немає в наявності
    В кошику
     од. на суму     грн.
| XDPL8220XUMA1 |  | 
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 16DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-16
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
    Description: IC LED DRIVER OFFL PWM 16DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-16
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
на замовлення 62500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 231+ | 102.22 грн | 
| IRGC10B60KB |  | 
Виробник: Infineon Technologies
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 2A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
    Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 2A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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| IPLK60R1K5PFD7ATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.8A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
    Description: MOSFET N-CH 600V 3.8A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
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| IPLK60R600PFD7ATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 7A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
    Description: MOSFET N-CH 600V 7A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
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| IPD60R1K5PFD7SAUMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
    Description: MOSFET N-CH 600V 3.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
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| XDPS21081XUMA1 |  | 
Виробник: Infineon Technologies
Description: XDP SMPS TV/PC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 23kHz ~ 139.1kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Not For New Designs
Number of Outputs: 1
    Description: XDP SMPS TV/PC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 23kHz ~ 139.1kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Not For New Designs
Number of Outputs: 1
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| IPDD60R170CFD7XTMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 19A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
    Description: MOSFET N-CH 600V 19A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 218.09 грн | 
| 10+ | 156.87 грн | 
| KP212K1409XTMA1 |  | 
Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 16.68PSI (10kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.3PSI (±2.07kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Grade: Automotive
Qualification: AEC-Q100
    Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 1.45PSI ~ 16.68PSI (10kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.3PSI (±2.07kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1447 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 255.26 грн | 
| 5+ | 220.19 грн | 
| 10+ | 210.49 грн | 
| 25+ | 186.67 грн | 
| 50+ | 179.27 грн | 
| 100+ | 172.50 грн | 
| 500+ | 156.25 грн | 
| KP212F1701XTMA1 |  | 
Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.5V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 2.18PSI ~ 16.68PSI (15kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
    Description: SENSOR 16.68PSIA 4.5V DSOF8
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 2.18PSI ~ 16.68PSI (15kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Maximum Pressure: 21.76PSI (150kPa)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 255.26 грн | 
| 5+ | 220.19 грн | 
| 10+ | 210.49 грн | 
| 25+ | 186.67 грн | 
| 50+ | 179.27 грн | 
| 100+ | 172.50 грн | 
| TC377TP96F300SAAKXUMA1 |  | 
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
    Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 855 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 2322.97 грн | 
| 10+ | 1813.09 грн | 
| 25+ | 1707.26 грн | 
| 100+ | 1493.03 грн | 
| 250+ | 1440.99 грн | 
| BSZ0910LSATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
    Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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| BSZ0910LSATMA1 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
    Description: MOSFET N-CH 30V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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| TLI4971A050T5UE0001XUMA1 |  | 
Виробник: Infineon Technologies
Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
    Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
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| TLI4971A025T5UE0001XUMA1 |  | 
Виробник: Infineon Technologies
Description: CURRENT SEN HE/OL 25A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
    Description: CURRENT SEN HE/OL 25A PG-TISON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
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| LITELDOSBCV33BOARDTOBO1 |  | 
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE9461-3ES
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9461-3ES
    Description: EVAL BOARD FOR TLE9461-3ES
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9461-3ES
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 10307.95 грн | 
| TT104N08KOFHPSA1 |  | 
Виробник: Infineon Technologies
Description: SCR MODULE 800V 160A MODULE
    Description: SCR MODULE 800V 160A MODULE
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| TT104N12KOFHPSA1 |  | 
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
    Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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| TT104N12KOFAHPSA1 |  | 
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
    Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Common Anode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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| TT104N12KOFKHPSA1 |  | 
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
    Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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| CY2XF33LXC533T |  | 
Виробник: Infineon Technologies
Description: TSBU
    Description: TSBU
на замовлення 173 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 650.13 грн | 
| IKW40N65RH5XKSA1 |  | 
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/165ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
    Description: IGBT TRENCH FS 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/165ns
Switching Energy: 160µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 250 W
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| IKW40N65H5 |  | 
Виробник: Infineon Technologies
Description: IGBT 650V 74A 255W PG-TO247-3
    Description: IGBT 650V 74A 255W PG-TO247-3
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| BSP324L6327 |  | 
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
на замовлення 80249 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1039+ | 22.12 грн | 
| BSP324 E6327 |  | 
Виробник: Infineon Technologies
Description: MOSFET N-CH 400V 170MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
    Description: MOSFET N-CH 400V 170MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
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| BCR401RE6433HTMA1 |  | 
Виробник: Infineon Technologies
Description: IC LED DRVR LIN 60MA SOT143R-3D
Packaging: Bulk
Package / Case: SOT-143R
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT-143R-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
    Description: IC LED DRVR LIN 60MA SOT143R-3D
Packaging: Bulk
Package / Case: SOT-143R
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Supplier Device Package: PG-SOT-143R-3D
Voltage - Supply (Min): 1.2V
Voltage - Supply (Max): 18V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2000+ | 8.72 грн | 
| TLE49452LHALA1 |  | 
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±3mT Trip, ±6mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
    Description: MAGNETIC SWITCH BIPOLAR 3SSO
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Output Type: Open Collector
Polarization: North Pole, South Pole
Function: Bipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3.8V ~ 24V
Technology: Hall Effect
Sensing Range: ±3mT Trip, ±6mT Release
Current - Output (Max): 100mA
Current - Supply (Max): 8mA
Test Condition: 25°C
Part Status: Last Time Buy
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| 1ED3860MU12MXUMA1 |  | 
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
    Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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| 1ED3860MU12MXUMA1 |  | 
Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Cut Tape (CT)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
    Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Cut Tape (CT)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
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| XDPS21081XUMA1 |  | 
Виробник: Infineon Technologies
Description: XDP SMPS TV/PC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 23kHz ~ 139.1kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Not For New Designs
Number of Outputs: 1
    Description: XDP SMPS TV/PC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 23kHz ~ 139.1kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 20.5V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Dead Time Control, Enable, Frequency Control, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Not For New Designs
Number of Outputs: 1
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| TLE5027CE6747HAMA3 |  | 
Виробник: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
    Description: SENSOR MAGNETORESISTIVE PWM 3SIP
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| TLE5027CE6747HAMA4 |  | 
Виробник: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
    Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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| TLE5027CXAAD47AGXAMA1 | 
Виробник: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
    Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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| FF150R12KE3B8BDLA1 |  | 
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: AG-62MM
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
    Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: AG-62MM
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 4+ | 6148.18 грн | 
| FF150R12ME3G |  | 
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
    Description: IGBT MODULE 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
на замовлення 351 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3+ | 9671.31 грн | 
| FF150R12ME3GBOSA1 |  | 
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
    Description: IGBT MOD 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
на замовлення 783 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3+ | 9223.85 грн | 
| FF150R12KE3B8BOSA1 | 
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR ECONO2-6
    Description: MOD IGBT LOW PWR ECONO2-6
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| PBL38630/2SOTR2B | 
Виробник: Infineon Technologies
Description: FLEXISLIC SLIC
    Description: FLEXISLIC SLIC
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 116+ | 204.15 грн | 
| BFP410H6327XTSA1 |  | 
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
    Description: RF TRANS NPN 5V 25GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
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| BFP410H6327XTSA1 |  | 
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
    Description: RF TRANS NPN 5V 25GHZ SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 13mA, 2V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
на замовлення 2888 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 12+ | 28.91 грн | 
| 17+ | 19.25 грн | 
| 25+ | 17.15 грн | 
| 100+ | 13.93 грн | 
| 250+ | 12.90 грн | 
| 500+ | 12.27 грн | 
| 1000+ | 11.57 грн | 
| TT142N12KOFHPSA1 |  | 
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 230A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
    Description: SCR MODULE 1.2KV 230A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3+ | 7858.04 грн | 
| MB3789APFV-GT-BND-ERE1 | 
Виробник: Infineon Technologies
Description: IC SUPERVISOR ANALOG 16SSOP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
    Description: IC SUPERVISOR ANALOG 16SSOP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| TLE493D-W2B6 3D-MS2GO |  | 
Виробник: Infineon Technologies
Description: TLE493D-W2B6 3D MAG SENSOR 2GO
    Description: TLE493D-W2B6 3D MAG SENSOR 2GO
на замовлення 15 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TLE493DA2B6MS2GOTOBO1 |  | 
Виробник: Infineon Technologies
Description: SENSOR HALL EFFECT I2C 2GO
Packaging: Bulk
Interface: I2C, Serial
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLE493D-A2B6
Supplied Contents: Board(s)
Sensing Range: ±160mT ~ ±230mT
Contents: Board(s)
    Description: SENSOR HALL EFFECT I2C 2GO
Packaging: Bulk
Interface: I2C, Serial
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLE493D-A2B6
Supplied Contents: Board(s)
Sensing Range: ±160mT ~ ±230mT
Contents: Board(s)
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| TLE493DA1B6HTSA1 |  | 
Виробник: Infineon Technologies
Description: IC 3D MAGN SENSOR TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.9V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±60mT
Supplier Device Package: PG-TSOP-6-6-5
    Description: IC 3D MAGN SENSOR TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.9V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±60mT
Supplier Device Package: PG-TSOP-6-6-5
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| IPU60R2K1CEAKMA1 |  | 
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
    Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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| CYRF6936-XC | 
Виробник: Infineon Technologies
Description: IC SOC WIRELESS USB
Packaging: Bulk
DigiKey Programmable: Not Verified
    Description: IC SOC WIRELESS USB
Packaging: Bulk
DigiKey Programmable: Not Verified
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| ESD145B1W01005E6327XTSA1 |  | 
Виробник: Infineon Technologies
Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
    Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
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| ESD145B1W01005E6327XTSA1 |  | 
Виробник: Infineon Technologies
Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
    Description: TVS DIODE 18VWM 5VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 18.5V
Voltage - Clamping (Max) @ Ipp: 5V (Typ)
Power - Peak Pulse: 21W
Power Line Protection: No
Part Status: Active
на замовлення 2714 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 37+ | 9.09 грн | 
| 56+ | 5.73 грн | 
| 130+ | 2.45 грн | 
| 500+ | 2.17 грн | 
| 1000+ | 1.97 грн | 
| 2000+ | 1.94 грн | 
| IMBG120R220M1HXTMA1 |  | 
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
    Description: SICFET N-CH 1.2KV 13A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
на замовлення 1044 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1+ | 488.22 грн | 
| 10+ | 315.25 грн | 
| 100+ | 227.65 грн | 
| 500+ | 178.59 грн |