Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148655) > Сторінка 395 з 2478
Фото | Назва | Виробник | Інформація |
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BTS611L1E3128A | Infineon Technologies |
![]() Features: Auto Restart, Slew Rate Controlled Packaging: Bulk Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 160mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 4.4A Ratio - Input:Output: 1:1 Supplier Device Package: P-TO263-7-2 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO Part Status: Active |
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BSC019N04LSATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V |
на замовлення 10534 шт: термін постачання 21-31 дні (днів) |
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TDA7116FHTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Frequency: 866MHz ~ 870MHz Modulation or Protocol: ASK, FSK Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.1V ~ 4V Power - Output: 13dBm Current - Transmitting: 14.2mA Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-10-2 Part Status: Obsolete DigiKey Programmable: Not Verified |
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TDA7116FHTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Frequency: 866MHz ~ 870MHz Modulation or Protocol: ASK, FSK Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.1V ~ 4V Power - Output: 13dBm Current - Transmitting: 14.2mA Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-10-2 Part Status: Obsolete DigiKey Programmable: Not Verified |
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BCR148WH6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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BCR 148F E6327 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSFP-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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BCR 148L3 E6327 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-TSLP-3-4 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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BCR 148T E6327 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Part Status: Obsolete Current - Collector (Ic) (Max): 70 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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BCR 148S H6827 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 100MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO Part Status: Obsolete |
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IMBF170R1K0M1XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.1mA Supplier Device Package: PG-TO263-7-13 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IMBF170R1K0M1XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.1mA Supplier Device Package: PG-TO263-7-13 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IMBF170R450M1XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Supplier Device Package: PG-TO263-7-13 Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IMBF170R450M1XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Supplier Device Package: PG-TO263-7-13 Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V |
на замовлення 1438 шт: термін постачання 21-31 дні (днів) |
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SAACIC61508OSRF3VAAAXUMA1 | Infineon Technologies | Description: IC SUPERVISOR PWR SUP SUPPORT |
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BSZ037N06LS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 36µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V |
на замовлення 9960 шт: термін постачання 21-31 дні (днів) |
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IPT020N10N5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 202µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V |
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IPT020N10N5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 202µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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IKFW50N65EH5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 52 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/138ns Switching Energy: 1.2mJ (on), 400µJ (off) Test Condition: 400V, 40A, 15.1Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 59 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 124 W |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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FP40R12KT3BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2-8 Part Status: Active Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 105 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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IRF7341GTRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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IRF7341GTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
на замовлення 12476 шт: термін постачання 21-31 дні (днів) |
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CY2314ANZSXC-1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: Clock Type: Fanout Buffer (Distribution) Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:14 Differential - Input:Output: No/No Supplier Device Package: 28-SOIC Frequency - Max: 100 MHz |
на замовлення 1243 шт: термін постачання 21-31 дні (днів) |
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CY2314ANZSXC-1T | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: Clock Type: Fanout Buffer (Distribution) Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:14 Differential - Input:Output: No/No Supplier Device Package: 28-SOIC Frequency - Max: 100 MHz |
на замовлення 5015 шт: термін постачання 21-31 дні (днів) |
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TD215N22KOFHPSA1 | Infineon Technologies |
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SPA03N60C3XK | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 29.7W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO220-3-111 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
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BCX6916H6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT89 Grade: Automotive Part Status: Last Time Buy Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 3 W Qualification: AEC-Q101 |
на замовлення 15638 шт: термін постачання 21-31 дні (днів) |
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IGW50N65F5 | Infineon Technologies |
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В кошику од. на суму грн. | ||||||||||||||
BSO303PH | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Active |
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В кошику од. на суму грн. | |||||||||||||||
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BSO303P | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Active |
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AUIRFR024NTRL | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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AUIRFR024NTRL | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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BS0200N03S | Infineon Technologies | Description: BSO200 - 20V-250V P-CHANNEL POWE |
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AIDK12S65C5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 363pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 70 µA @ 650 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AIDK12S65C5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 363pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 70 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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CP8173ATT | Infineon Technologies |
Description: IC MCU CAPSENSE PLUS 56QFN Packaging: Tape & Reel (TR) Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CP8175ATT | Infineon Technologies |
Description: IC MCU CAPSENSE PLUS 56QFN Packaging: Tape & Reel (TR) Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CP8173AT | Infineon Technologies |
Description: IC MCU CAPSENSE PLUS 56QFN Packaging: Tray Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CP8175AT | Infineon Technologies |
Description: IC MCU CAPSENSE PLUS 56QFN Packaging: Tray Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
CP8176AT | Infineon Technologies |
Description: IC MCU CAPSENSE PLUS 56QFN Packaging: Tray Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAS4006WH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
на замовлення 22717 шт: термін постачання 21-31 дні (днів) |
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AIMW120R045M1XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V Power Dissipation (Max): 228W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 10mA Supplier Device Package: PG-TO247-3 Grade: Automotive Part Status: Active Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 270 шт: термін постачання 21-31 дні (днів) |
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FP25R12KE3BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2-8 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 155 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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TD270N16KOFBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 270 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 450 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
TT104N12KOFB2HPSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TT61N08KOFB2HPSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BSM15GD120DLCE3224BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 35A 145W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 145 W Current - Collector Cutoff (Max): 76 µA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V |
на замовлення 287 шт: термін постачання 21-31 дні (днів) |
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BSM200GA120DLCHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 370A 1450W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1450 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
на замовлення 643 шт: термін постачання 21-31 дні (днів) |
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BSM300GA120DLCHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 570A 2250W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A NTC Thermistor: No Supplier Device Package: Module Part Status: Last Time Buy Current - Collector (Ic) (Max): 570 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2250 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 22 nF @ 25 V |
на замовлення 175 шт: термін постачання 21-31 дні (днів) |
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FS50R07W1E3B11ABOMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 205 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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TZ810N22KOFHPSA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Single Current - Hold (Ih) (Max): 500 mA Current - Gate Trigger (Igt) (Max): 250 mA Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 819 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 2.2 kV |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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TLF30682QVS01XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Voltage - Output: Multiple Mounting Type: Surface Mount Number of Outputs: 3 Voltage - Input: 4V ~ 35V Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TLF30682QVS01XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Voltage - Output: Multiple Mounting Type: Surface Mount Number of Outputs: 3 Voltage - Input: 4V ~ 35V Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2265 шт: термін постачання 21-31 дні (днів) |
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FM25V20-PG | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 8-PDIP Part Status: Obsolete Memory Interface: SPI Memory Organization: 256K x 8 DigiKey Programmable: Not Verified |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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CY15B256J-SXE | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 3.4 MHz Memory Format: FRAM Supplier Device Package: 8-SOIC Memory Interface: I2C Access Time: 130 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
на замовлення 486 шт: термін постачання 21-31 дні (днів) |
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S29PL032J60BFI120A | Infineon Technologies |
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на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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S29PL032J60BFI120A | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRS2007MPBFAUMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BFR949TE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 20dB Power - Max: 250mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1GHz ~ 1.8GHz Supplier Device Package: PG-SC-75 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BFR949L3E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21.5dB Power - Max: 250mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz Supplier Device Package: PG-TSLP-3-1 Part Status: Active |
на замовлення 13990 шт: термін постачання 21-31 дні (днів) |
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SAKTC1797512F180EFXACKXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 416-BGA Mounting Type: Surface Mount Speed: 180MHz Program Memory Size: 4MB (4M x 8) RAM Size: 176K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 48x10b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC Peripherals: DMA, POR, WDT Supplier Device Package: PG-BGA-416-27 Part Status: Active Number of I/O: 221 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
BTS611L1E3128A |
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Виробник: Infineon Technologies
Description: SMART TWO CHANNEL HIGH-SIDE POWE
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.4A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Description: SMART TWO CHANNEL HIGH-SIDE POWE
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.4A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
BSC019N04LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V
Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V
на замовлення 10534 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 69.24 грн |
10+ | 51.73 грн |
100+ | 43.57 грн |
500+ | 36.52 грн |
1000+ | 35.39 грн |
2000+ | 33.04 грн |
TDA7116FHTMA1 |
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Виробник: Infineon Technologies
Description: RF TX IC ASK 866-870MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 866MHz ~ 870MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 13dBm
Current - Transmitting: 14.2mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: RF TX IC ASK 866-870MHZ 10TFSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 866MHz ~ 870MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 13dBm
Current - Transmitting: 14.2mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
TDA7116FHTMA1 |
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Виробник: Infineon Technologies
Description: RF TX IC ASK 866-870MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 866MHz ~ 870MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 13dBm
Current - Transmitting: 14.2mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: RF TX IC ASK 866-870MHZ 10TFSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Frequency: 866MHz ~ 870MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 4V
Power - Output: 13dBm
Current - Transmitting: 14.2mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-10-2
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
BCR148WH6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товару немає в наявності
В кошику
од. на суму грн.
BCR 148F E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
товару немає в наявності
В кошику
од. на суму грн.
BCR 148L3 E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 148T E6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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BCR 148S H6827 |
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Виробник: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
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IMBF170R1K0M1XTMA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 5.2A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
Description: SICFET N-CH 1700V 5.2A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 131.43 грн |
IMBF170R1K0M1XTMA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 5.2A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
Description: SICFET N-CH 1700V 5.2A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 356.52 грн |
10+ | 228.14 грн |
100+ | 162.75 грн |
500+ | 145.37 грн |
IMBF170R450M1XTMA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 200.33 грн |
IMBF170R450M1XTMA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
на замовлення 1438 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 481.46 грн |
10+ | 293.89 грн |
100+ | 236.12 грн |
SAACIC61508OSRF3VAAAXUMA1 |
Виробник: Infineon Technologies
Description: IC SUPERVISOR PWR SUP SUPPORT
Description: IC SUPERVISOR PWR SUP SUPPORT
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BSZ037N06LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
на замовлення 9960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.84 грн |
10+ | 126.29 грн |
25+ | 112.77 грн |
100+ | 95.25 грн |
250+ | 84.67 грн |
500+ | 74.09 грн |
1000+ | 63.37 грн |
IPT020N10N5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 31A/260A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Description: MOSFET N-CH 100V 31A/260A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
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IPT020N10N5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 31A/260A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Description: MOSFET N-CH 100V 31A/260A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 260A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 150A, 10V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 202µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 335.83 грн |
IKFW50N65EH5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 59A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/138ns
Switching Energy: 1.2mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15.1Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
Description: IGBT TRENCH FS 650V 59A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 52 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/138ns
Switching Energy: 1.2mJ (on), 400µJ (off)
Test Condition: 400V, 40A, 15.1Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 124 W
на замовлення 105 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 654.95 грн |
30+ | 369.42 грн |
FP40R12KT3BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 6143.65 грн |
15+ | 4720.06 грн |
IRF7341GTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 55V 5.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 54.38 грн |
IRF7341GTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 55V 5.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 12476 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 158.37 грн |
10+ | 105.22 грн |
100+ | 80.36 грн |
500+ | 61.36 грн |
1000+ | 60.16 грн |
CY2314ANZSXC-1 |
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Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:14 100MHZ 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: Clock
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:14
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
Frequency - Max: 100 MHz
Description: IC CLK BUFFER 1:14 100MHZ 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: Clock
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:14
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
Frequency - Max: 100 MHz
на замовлення 1243 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
62+ | 360.73 грн |
CY2314ANZSXC-1T |
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Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:14 100MHZ 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: Clock
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:14
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
Frequency - Max: 100 MHz
Description: IC CLK BUFFER 1:14 100MHZ 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: Clock
Type: Fanout Buffer (Distribution)
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:14
Differential - Input:Output: No/No
Supplier Device Package: 28-SOIC
Frequency - Max: 100 MHz
на замовлення 5015 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
61+ | 366.61 грн |
TD215N22KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2200V 410A MODULE
Description: SCR MODULE 2200V 410A MODULE
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SPA03N60C3XK |
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Виробник: Infineon Technologies
Description: SPA03N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Description: SPA03N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 29.7W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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BCX6916H6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
Description: TRANS PNP 20V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
на замовлення 15638 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
960+ | 22.76 грн |
IGW50N65F5 |
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Виробник: Infineon Technologies
Description: IGBT 650V 80A 305W PG-TO247-3
Description: IGBT 650V 80A 305W PG-TO247-3
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BSO303PH |
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Виробник: Infineon Technologies
Description: 7A, 30V, 0.021OHM, 2-ELEMENT, P
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Description: 7A, 30V, 0.021OHM, 2-ELEMENT, P
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Active
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BSO303P |
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Виробник: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Active
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AUIRFR024NTRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AUIRFR024NTRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 17A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BS0200N03S |
Виробник: Infineon Technologies
Description: BSO200 - 20V-250V P-CHANNEL POWE
Description: BSO200 - 20V-250V P-CHANNEL POWE
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AIDK12S65C5ATMA1 |
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Виробник: Infineon Technologies
Description: DISCRETE DIODES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 363pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Qualification: AEC-Q101
Description: DISCRETE DIODES
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 363pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Qualification: AEC-Q101
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AIDK12S65C5ATMA1 |
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Виробник: Infineon Technologies
Description: DISCRETE DIODES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 363pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Qualification: AEC-Q101
Description: DISCRETE DIODES
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 363pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Qualification: AEC-Q101
на замовлення 980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 421.78 грн |
10+ | 340.94 грн |
100+ | 275.84 грн |
500+ | 230.10 грн |
CP8173ATT |
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8175ATT |
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8173AT |
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8175AT |
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8176AT |
Виробник: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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BAS4006WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 22717 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.08 грн |
23+ | 13.56 грн |
100+ | 8.48 грн |
500+ | 5.87 грн |
1000+ | 5.20 грн |
AIMW120R045M1XKSA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 52A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
Power Dissipation (Max): 228W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
Qualification: AEC-Q101
на замовлення 270 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1742.82 грн |
30+ | 1075.22 грн |
120+ | 1029.09 грн |
FP25R12KE3BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 155 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 5703.57 грн |
15+ | 4358.25 грн |
TD270N16KOFBPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1600V 450A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 270 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 450 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1600V 450A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 270 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 450 A
Voltage - Off State: 1.6 kV
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TT104N12KOFB2HPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Description: SCR MODULE 1.2KV 160A MODULE
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TT61N08KOFB2HPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 800V 120A MODULE
Description: SCR MODULE 800V 120A MODULE
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BSM15GD120DLCE3224BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 35A 145W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 76 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: IGBT MOD 1200V 35A 145W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 76 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
на замовлення 287 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 5047.34 грн |
BSM200GA120DLCHOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 370A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD 1200V 370A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 643 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 12445.67 грн |
BSM300GA120DLCHOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 570A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 570 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
Description: IGBT MOD 1200V 570A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 570 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22 nF @ 25 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 16217.41 грн |
FS50R07W1E3B11ABOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Description: IGBT MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 3147.43 грн |
TZ810N22KOFHPSA2 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 1500A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 1500A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 32252.57 грн |
TLF30682QVS01XUMA1 |
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Виробник: Infineon Technologies
Description: DC/DC CONVERTER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4V ~ 35V
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
Description: DC/DC CONVERTER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4V ~ 35V
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLF30682QVS01XUMA1 |
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Виробник: Infineon Technologies
Description: DC/DC CONVERTER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4V ~ 35V
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
Description: DC/DC CONVERTER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: Multiple
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4V ~ 35V
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2265 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 755.22 грн |
10+ | 500.03 грн |
100+ | 371.82 грн |
500+ | 312.99 грн |
FM25V20-PG |
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Виробник: Infineon Technologies
Description: IC FRAM 2MBIT SPI 40MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 2MBIT SPI 40MHZ 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
на замовлення 24 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 1070.99 грн |
CY15B256J-SXE |
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Виробник: Infineon Technologies
Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 486 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 757.61 грн |
10+ | 677.52 грн |
25+ | 656.66 грн |
50+ | 601.46 грн |
100+ | 586.77 грн |
485+ | 553.90 грн |
S29PL032J60BFI120A |
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Виробник: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48FBGA
Description: IC FLASH 32MBIT PARALLEL 48FBGA
на замовлення 17 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 112.21 грн |
S29PL032J60BFI120A |
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Виробник: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48FBGA
Description: IC FLASH 32MBIT PARALLEL 48FBGA
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IRS2007MPBFAUMA1 |
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Виробник: Infineon Technologies
Description: LEVEL SHIFT JUNCTION ISO
Description: LEVEL SHIFT JUNCTION ISO
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BFR949TE6327 |
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Виробник: Infineon Technologies
Description: RF SMALL SIGNAL BIPOLAR TRANS
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1GHz ~ 1.8GHz
Supplier Device Package: PG-SC-75
Part Status: Active
Description: RF SMALL SIGNAL BIPOLAR TRANS
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1GHz ~ 1.8GHz
Supplier Device Package: PG-SC-75
Part Status: Active
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BFR949L3E6327 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 10V 9GHZ PG-TSLP3-1
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
Description: RF TRANS NPN 10V 9GHZ PG-TSLP3-1
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
на замовлення 13990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3463+ | 6.61 грн |
SAKTC1797512F180EFXACKXUMA1 |
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Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-27
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-27
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
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