Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148760) > Сторінка 404 з 2480
| Фото | Назва | Виробник | Інформація |
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| FZ1800R17HE4B9NPSA1 | Infineon Technologies |
Description: INSULATED GATE BIPOLAR TRANSISTO |
товару немає в наявності |
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IR3595AMTRPBF | Infineon Technologies |
Description: IC REG CTLR BUCK PWM 56QFNPackaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 56-QFN (7x7) Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3595AMTRPBF | Infineon Technologies |
Description: IC REG CTLR BUCK PWM 56QFNPackaging: Cut Tape (CT) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 56-QFN (7x7) Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N7002L6327HTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 300MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PG-SOT23-PO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V |
товару немає в наявності |
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BSZ042N04NSG | Infineon Technologies |
Description: MOSFET N-CH 40V 40A TO220AB |
на замовлення 47574 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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ESD230B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 14VC WLL-2-1Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: WLL-2-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.05V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 56W |
товару немає в наявності |
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IPS514G | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 28SOICPackaging: Tube Features: Auto Restart Package / Case: 28-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 130mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 850mA Ratio - Input:Output: 1:1 Supplier Device Package: 28-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature Part Status: Obsolete |
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| IPS50R520CPBKMA1 | Infineon Technologies |
Description: LOW POWER_LEGACYPackaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PG-TO251-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V |
товару немає в наявності |
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IPS50R520CPAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 7.1A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLE75620EMTXUMA1 | Infineon Technologies |
Description: IC PWR DRIVER N-CHAN 1:8 SSOP14 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEB3265HV1.5 | Infineon Technologies | Description: SLIC FILTER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PEB 3265 H V1.5 | Infineon Technologies |
Description: IC TELECOM INTERFACE MQFP-64Packaging: Tray Package / Case: 64-QFP Mounting Type: Surface Mount Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Interface: IOM-2, PCM Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.3V Current - Supply: 105mA Supplier Device Package: P-MQFP-64-1 Number of Circuits: 2 |
товару немає в наявності |
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TLD1313ELXUMA1 | Infineon Technologies |
Description: IC LED DRVR LINEAR 120MA 14SSOPPackaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 3 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 120mA Internal Switch(s): Yes Supplier Device Package: PG-SSOP-14-5 Voltage - Supply (Min): 5.5V Voltage - Supply (Max): 40V Part Status: Active Grade: Automotive |
на замовлення 3772 шт: термін постачання 21-31 дні (днів) |
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TLD1313EL | Infineon Technologies |
Description: IC LED DRVR LINEAR 120MA 14SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BGS22X11E6331XUMA1 | Infineon Technologies |
Description: DPDT DIFFERENTIAL RF SWITCH Packaging: Bulk |
на замовлення 392000 шт: термін постачання 21-31 дні (днів) |
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1EDB9275FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Supply: 10V ~ 56V Input Type: Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Channel Type: Single Driven Configuration: High-Side Number of Drivers: 2 Gate Type: IGBT, SiC MOSFET Current - Peak Output (Source, Sink): 4A, 8A DigiKey Programmable: Not Verified |
товару немає в наявності |
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1EDB9275FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Supply: 10V ~ 56V Input Type: Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Channel Type: Single Driven Configuration: High-Side Number of Drivers: 2 Gate Type: IGBT, SiC MOSFET Current - Peak Output (Source, Sink): 4A, 8A DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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REF10WTXQI4102TOBO1 | Infineon Technologies |
Description: DEV KITPackaging: Box For Use With/Related Products: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006 Frequency: 127.8kHz Type: Transmitter Supplied Contents: Board(s) Part Status: Active Contents: Board(s) Utilized IC / Part: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006 |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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BTS115ANKSA1 | Infineon Technologies |
Description: MOSFET N-CH 50V 15.5A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BTS129NKSA1 | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 2Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BB640E6327 | Infineon Technologies |
Description: BB640 - VARACTOR DIODE |
на замовлення 50667 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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AIGB40N65F5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 40A TO263-3-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AIGB40N65H5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 40A TO263-3-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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IKZA40N65RH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 74A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/165ns Switching Energy: 140µJ (on), 120µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 250 W |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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| FP75R17N3E4BPSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 125A 555W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 555 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V |
на замовлення 232 шт: термін постачання 21-31 дні (днів) |
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EVAL1ED3491MX12MTOBO1 | Infineon Technologies |
Description: 1ED3491MX12MTOBO1 DEV KITPackaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: 1ED3491MU12M, 1ED3491MC12M Supplied Contents: Board(s) Primary Attributes: 1-Channel (Single) Embedded: Yes, MCU Part Status: Active Contents: Board(s) Secondary Attributes: On-Board LEDs |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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| IRGH4607DPBF | Infineon Technologies | Description: IGBT 600V 8PQFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IQE006NE2LM5CGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 41A/298A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IQE006NE2LM5CGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 41A/298A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V |
на замовлення 9470 шт: термін постачання 21-31 дні (днів) |
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IQE006NE2LM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 41A/298A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IQE006NE2LM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 41A/298A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V |
на замовлення 1883 шт: термін постачання 21-31 дні (днів) |
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TLS4120D0EPV33XUMA1 | Infineon Technologies |
Description: IC REG BUCK 3.3V 2A TSDSO-14-5Packaging: Tape & Reel (TR) Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.8MHz Voltage - Input (Max): 35V Topology: Buck Supplier Device Package: PG-TSDSO-14-5 Synchronous Rectifier: Yes Voltage - Input (Min): 3.7V Voltage - Output (Min/Fixed): 3.3V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLS4120D0EPV33XUMA1 | Infineon Technologies |
Description: IC REG BUCK 3.3V 2A TSDSO-14-5Packaging: Cut Tape (CT) Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.8MHz Voltage - Input (Max): 35V Topology: Buck Supplier Device Package: PG-TSDSO-14-5 Synchronous Rectifier: Yes Voltage - Input (Min): 3.7V Voltage - Output (Min/Fixed): 3.3V Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3345 шт: термін постачання 21-31 дні (днів) |
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TLS4125D0EPV33XUMA1 | Infineon Technologies |
Description: OPTIREG SWITCHER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLS4125D0EPV33XUMA1 | Infineon Technologies |
Description: OPTIREG SWITCHER |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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F3L75R07W2E3B11BOMA1 | Infineon Technologies |
Description: IGBT MODULE 650V 95A 250WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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FP35R12KT4BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 25A AG-ECONO2-8Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2-8 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 210 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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| BSF110N06NT3GXUMA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: DirectFET™ Isometric ST Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 33µA Supplier Device Package: MG-WDSON-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V |
на замовлення 8335 шт: термін постачання 21-31 дні (днів) |
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BBY57-02V | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODEPackaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: PG-SC79-2 Part Status: Active Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 4.5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DD1200S17H4_B2 | Infineon Technologies |
Description: DD1200S17 - RECTIFIER DIODE MODU |
на замовлення 82 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
| DD1200S12H4NPSA1 | Infineon Technologies |
Description: RECTIFIER DIODE MODULE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CG7815AAT | Infineon Technologies |
Description: MEMORY SRAM ASYNC Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CG7815AA | Infineon Technologies |
Description: MEMORY SRAM ASYNC Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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EVAL1ED44173N01BTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR 1ED44173N01BPackaging: Bulk Function: MOSFET Type: Interface Utilized IC / Part: 1ED44173N01B Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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BGS12WN6E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SPDT 9GHZ TSNP6-10Packaging: Tape & Reel (TR) Features: DC Blocked Package / Case: 6-XFDFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: WLAN Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Insertion Loss: 1.12dB Frequency Range: 50MHz ~ 9GHz Test Frequency: 9GHz Isolation: 22dB Supplier Device Package: PG-TSNP-6-10 IIP3: 70dBm Part Status: Active |
на замовлення 83900 шт: термін постачання 21-31 дні (днів) |
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BGS12WN6E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SPDT 9GHZ TSNP6-10Packaging: Cut Tape (CT) Features: DC Blocked Package / Case: 6-XFDFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPDT RF Type: WLAN Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Insertion Loss: 1.12dB Frequency Range: 50MHz ~ 9GHz Test Frequency: 9GHz Isolation: 22dB Supplier Device Package: PG-TSNP-6-10 IIP3: 70dBm Part Status: Active |
на замовлення 90252 шт: термін постачання 21-31 дні (днів) |
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CYW20733A2KML1GT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 56VFQFNPackaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V Power - Output: 10dBm Protocol: Bluetooth v3.0 Current - Receiving: 26.4mA Current - Transmitting: 47mA Supplier Device Package: 56-QFN (7x7) RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE8457LINLDOBOARDTOBO1 | Infineon Technologies |
Description: TLE8457 LIN LDO BOARD |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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TT61N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 120A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 76 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 120 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY8C4014LQI-SLT2 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 24SQFNPackaging: Bulk Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: D/A 1x7b, 1x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I²C Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 726 шт: термін постачання 21-31 дні (днів) |
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| XMC4800-E196K2048AA | Infineon Technologies |
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4Packaging: Bulk Package / Case: 196-LFBGA Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 2MB (2M x 8) RAM Size: 352K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 32x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC Peripherals: DMA, I²S, LED, POR, Touch-Sense, WDT Supplier Device Package: PG-LFBGA-196-2 Part Status: Active Number of I/O: 155 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1ED3890MU12MXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 1CH GT DVR DSO16-28Packaging: Tape & Reel (TR) Package / Case: 16-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 9A Technology: Magnetic Coupling Approval Agency: UL, VDE Supplier Device Package: PG-DSO-16-28 Rise / Fall Time (Typ): 15ns, 15ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 13V ~ 25V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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1ED3830MU12MXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 1CH GT DVR DSO16-28Packaging: Tape & Reel (TR) Package / Case: 16-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 3A Technology: Magnetic Coupling Approval Agency: UL, VDE Supplier Device Package: PG-DSO-16-28 Rise / Fall Time (Typ): 15ns, 15ns Part Status: Active Number of Channels: 1 Voltage - Output Supply: 13V ~ 25V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IPP60R120P7 | Infineon Technologies |
Description: 600V, 0.12OHM, N-CHANNEL MOSFET,Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SP001385054 | Infineon Technologies |
Description: IPP60R120C7XKSA1 - 600V COOLMOSPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 390µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1370KV25-167AXC | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
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FXE167F96F66LACXP | Infineon Technologies |
Description: IC MCU 16BIT 768KB FLASH 144LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SAF-XE167K-48F66LAC | Infineon Technologies |
Description: 16-BIT FLASH MICROCONTROLLER, 80Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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SAF-XE167K-72F66LAC | Infineon Technologies |
Description: 16-BIT FLASH MICROCONTROLLER, 80Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 188 шт: термін постачання 21-31 дні (днів) |
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SAF-XE167H-96F66LAC | Infineon Technologies |
Description: XE167 - 16-BIT FLASH RISC MICROCPackaging: Bulk Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 768KB (768K x 8) RAM Size: 82K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 8, 16x8/10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Part Status: Active Number of I/O: 118 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| FZ1800R17HE4B9NPSA1 |
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Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Description: INSULATED GATE BIPOLAR TRANSISTO
товару немає в наявності
В кошику
од. на суму грн.
| IR3595AMTRPBF |
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Виробник: Infineon Technologies
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| IR3595AMTRPBF |
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Виробник: Infineon Technologies
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| 2N7002L6327HTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| BSZ042N04NSG |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A TO220AB
Description: MOSFET N-CH 40V 40A TO220AB
на замовлення 47574 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| ESD230B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
товару немає в наявності
В кошику
од. на суму грн.
| IPS514G |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 28SOIC
Packaging: Tube
Features: Auto Restart
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 850mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:1 28SOIC
Packaging: Tube
Features: Auto Restart
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 850mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| IPS50R520CPBKMA1 |
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Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IPS50R520CPAKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.1A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Description: MOSFET N-CH 500V 7.1A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| TLE75620EMTXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 SSOP14
Description: IC PWR DRIVER N-CHAN 1:8 SSOP14
товару немає в наявності
В кошику
од. на суму грн.
| PEB3265HV1.5 |
Виробник: Infineon Technologies
Description: SLIC FILTER
Description: SLIC FILTER
товару немає в наявності
В кошику
од. на суму грн.
| PEB 3265 H V1.5 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-64
Packaging: Tray
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: P-MQFP-64-1
Number of Circuits: 2
Description: IC TELECOM INTERFACE MQFP-64
Packaging: Tray
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: P-MQFP-64-1
Number of Circuits: 2
товару немає в наявності
В кошику
од. на суму грн.
| TLD1313ELXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Part Status: Active
Grade: Automotive
на замовлення 3772 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 94.12 грн |
| 10+ | 65.59 грн |
| 25+ | 59.29 грн |
| 100+ | 49.17 грн |
| 250+ | 46.08 грн |
| 500+ | 44.21 грн |
| 1000+ | 41.98 грн |
| TLD1313EL |
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Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Description: IC LED DRVR LINEAR 120MA 14SSOP
товару немає в наявності
В кошику
од. на суму грн.
| BGS22X11E6331XUMA1 |
на замовлення 392000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 945+ | 23.47 грн |
| 1EDB9275FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
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од. на суму грн.
| 1EDB9275FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| REF10WTXQI4102TOBO1 |
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Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Box
For Use With/Related Products: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Frequency: 127.8kHz
Type: Transmitter
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Description: DEV KIT
Packaging: Box
For Use With/Related Products: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Frequency: 127.8kHz
Type: Transmitter
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 17963.76 грн |
| BTS115ANKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 393.16 грн |
| BTS129NKSA1 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BB640E6327 |
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Виробник: Infineon Technologies
Description: BB640 - VARACTOR DIODE
Description: BB640 - VARACTOR DIODE
на замовлення 50667 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| AIGB40N65F5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
товару немає в наявності
В кошику
од. на суму грн.
| AIGB40N65H5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 382.48 грн |
| 10+ | 245.05 грн |
| IKZA40N65RH5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/165ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
Description: IGBT TRENCH FS 650V 74A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/165ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 487.73 грн |
| 30+ | 268.89 грн |
| 120+ | 224.75 грн |
| FP75R17N3E4BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 125A 555W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
Description: IGBT MOD 1700V 125A 555W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 14288.70 грн |
| EVAL1ED3491MX12MTOBO1 |
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Виробник: Infineon Technologies
Description: 1ED3491MX12MTOBO1 DEV KIT
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED3491MU12M, 1ED3491MC12M
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Embedded: Yes, MCU
Part Status: Active
Contents: Board(s)
Secondary Attributes: On-Board LEDs
Description: 1ED3491MX12MTOBO1 DEV KIT
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED3491MU12M, 1ED3491MC12M
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Embedded: Yes, MCU
Part Status: Active
Contents: Board(s)
Secondary Attributes: On-Board LEDs
на замовлення 29 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 6138.52 грн |
| IRGH4607DPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 8PQFN
Description: IGBT 600V 8PQFN
товару немає в наявності
В кошику
од. на суму грн.
| IQE006NE2LM5CGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 75.86 грн |
| IQE006NE2LM5CGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
на замовлення 9470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 219.91 грн |
| 10+ | 144.61 грн |
| 100+ | 103.58 грн |
| 500+ | 76.48 грн |
| 1000+ | 66.76 грн |
| IQE006NE2LM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| IQE006NE2LM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
на замовлення 1883 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 205.36 грн |
| 10+ | 127.47 грн |
| 100+ | 87.62 грн |
| 500+ | 66.83 грн |
| TLS4120D0EPV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 163.85 грн |
| TLS4120D0EPV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3345 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 302.05 грн |
| 10+ | 220.08 грн |
| 25+ | 202.43 грн |
| 100+ | 171.70 грн |
| 250+ | 162.98 грн |
| 500+ | 157.73 грн |
| 1000+ | 150.90 грн |
| TLS4125D0EPV33XUMA1 |
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Виробник: Infineon Technologies
Description: OPTIREG SWITCHER
Description: OPTIREG SWITCHER
товару немає в наявності
В кошику
од. на суму грн.
| TLS4125D0EPV33XUMA1 |
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Виробник: Infineon Technologies
Description: OPTIREG SWITCHER
Description: OPTIREG SWITCHER
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| F3L75R07W2E3B11BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 650V 95A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Description: IGBT MODULE 650V 95A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3764.91 грн |
| FP35R12KT4BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: IGBT MOD 1200V 25A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4919.20 грн |
| 15+ | 3615.47 грн |
| BSF110N06NT3GXUMA1 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
на замовлення 8335 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 443+ | 50.25 грн |
| BBY57-02V |
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Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
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| DD1200S17H4_B2 |
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Виробник: Infineon Technologies
Description: DD1200S17 - RECTIFIER DIODE MODU
Description: DD1200S17 - RECTIFIER DIODE MODU
на замовлення 82 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| DD1200S12H4NPSA1 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE MODULE
Description: RECTIFIER DIODE MODULE
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| CG7815AAT |
Виробник: Infineon Technologies
Description: MEMORY SRAM ASYNC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: MEMORY SRAM ASYNC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| CG7815AA |
Виробник: Infineon Technologies
Description: MEMORY SRAM ASYNC
Packaging: Tray
DigiKey Programmable: Not Verified
Description: MEMORY SRAM ASYNC
Packaging: Tray
DigiKey Programmable: Not Verified
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| EVAL1ED44173N01BTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED44173N01B
Packaging: Bulk
Function: MOSFET
Type: Interface
Utilized IC / Part: 1ED44173N01B
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR 1ED44173N01B
Packaging: Bulk
Function: MOSFET
Type: Interface
Utilized IC / Part: 1ED44173N01B
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2099.79 грн |
| BGS12WN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Tape & Reel (TR)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
на замовлення 83900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12000+ | 10.82 грн |
| 24000+ | 10.01 грн |
| 36000+ | 9.79 грн |
| 60000+ | 8.92 грн |
| BGS12WN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
Description: IC RF SWITCH SPDT 9GHZ TSNP6-10
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: WLAN
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Insertion Loss: 1.12dB
Frequency Range: 50MHz ~ 9GHz
Test Frequency: 9GHz
Isolation: 22dB
Supplier Device Package: PG-TSNP-6-10
IIP3: 70dBm
Part Status: Active
на замовлення 90252 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.68 грн |
| 21+ | 16.31 грн |
| 25+ | 15.33 грн |
| 100+ | 13.14 грн |
| 250+ | 12.39 грн |
| 500+ | 11.86 грн |
| 1000+ | 11.17 грн |
| 5000+ | 10.13 грн |
| CYW20733A2KML1GT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 56-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 56-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| TLE8457LINLDOBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: TLE8457 LIN LDO BOARD
Description: TLE8457 LIN LDO BOARD
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9356.66 грн |
| TT61N16KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
товару немає в наявності
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| CY8C4014LQI-SLT2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 726 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 206.21 грн |
| XMC4800-E196K2048AA |
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Виробник: Infineon Technologies
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 196-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 352K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I²S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LFBGA-196-2
Part Status: Active
Number of I/O: 155
DigiKey Programmable: Not Verified
Description: 32-BIT MCU XMC4000 ARM CORTEX-M4
Packaging: Bulk
Package / Case: 196-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 352K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I²S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LFBGA-196-2
Part Status: Active
Number of I/O: 155
DigiKey Programmable: Not Verified
товару немає в наявності
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од. на суму грн.
| 1ED3890MU12MXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 9A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 310.14 грн |
| 1ED3830MU12MXUMA1 |
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Виробник: Infineon Technologies
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
Description: DIGITAL ISO 1CH GT DVR DSO16-28
Packaging: Tape & Reel (TR)
Package / Case: 16-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A
Technology: Magnetic Coupling
Approval Agency: UL, VDE
Supplier Device Package: PG-DSO-16-28
Rise / Fall Time (Typ): 15ns, 15ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 25V
товару немає в наявності
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од. на суму грн.
| IPP60R120P7 |
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Виробник: Infineon Technologies
Description: 600V, 0.12OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Part Status: Active
Description: 600V, 0.12OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Part Status: Active
товару немає в наявності
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од. на суму грн.
| SP001385054 |
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Виробник: Infineon Technologies
Description: IPP60R120C7XKSA1 - 600V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: IPP60R120C7XKSA1 - 600V COOLMOS
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| CY7C1370KV25-167AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 235 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 749.56 грн |
| FXE167F96F66LACXP |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 144LQFP
Description: IC MCU 16BIT 768KB FLASH 144LQFP
товару немає в наявності
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| SAF-XE167K-48F66LAC |
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Виробник: Infineon Technologies
Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 44+ | 569.29 грн |
| SAF-XE167K-72F66LAC |
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Виробник: Infineon Technologies
Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: 16-BIT FLASH MICROCONTROLLER, 80
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 188 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 43+ | 579.94 грн |
| SAF-XE167H-96F66LAC |
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Виробник: Infineon Technologies
Description: XE167 - 16-BIT FLASH RISC MICROC
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8, 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
Description: XE167 - 16-BIT FLASH RISC MICROC
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8, 16x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, QSPI, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Part Status: Active
Number of I/O: 118
DigiKey Programmable: Not Verified
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