Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126654) > Сторінка 404 з 2111
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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IPB60R070CFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 31A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4.5V @ 760µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 1712 шт: термін постачання 21-31 дні (днів) |
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IPB60R040CFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 50A TO263-3Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4.5V @ 1.25mA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPB60R040CFD7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 50A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4.5V @ 1.25mA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 2881 шт: термін постачання 21-31 дні (днів) |
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IPD60R750E6BTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 5.7A TO252 |
на замовлення 36500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 662 шт В кошику од. на суму грн. | ||||||||||||||||
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IPD60R380E6ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 600V 10.6A TO252-3Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
на замовлення 6650 шт: термін постачання 21-31 дні (днів) |
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IPD60R800CEAUMA1 | Infineon Technologies |
Description: CONSUMERPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 170µA Supplier Device Package: PG-TO252-3-344 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPA126N10N3G | Infineon Technologies |
Description: 35A, 100V, 0.0126OHM, N-CHANNEL |
на замовлення 1450 шт: термін постачання 21-31 дні (днів) |
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CHL8328-35CRT | Infineon Technologies |
Description: IC REG CTRLR DDR 2OUT 56VQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IAUC41N06S5L100ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 41A TDSON-8-33Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tj) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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ICE5QR1680BGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Active Power (Watts): 50 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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ICE5QR1680BGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSOPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Active Power (Watts): 50 W |
на замовлення 771 шт: термін постачання 21-31 дні (днів) |
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| IPC302N15N3X7SA1 | Infineon Technologies |
Description: MV POWER MOSDrain to Source Voltage (Vdss): 150 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 4V @ 270µA Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FZ400R17KE3S4HOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 620A 2250WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 620 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 2250 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 36 nF @ 25 V |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
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FS225R12KE4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 320A 1100WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1100 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
на замовлення 1561 шт: термін постачання 21-31 дні (днів) |
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| FD400R07PE4RB6BOSA1 | Infineon Technologies |
Description: IGBT MOD 650V 460A 1150WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 460 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1150 W Current - Collector Cutoff (Max): 20 µA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V |
на замовлення 267 шт: термін постачання 21-31 дні (днів) |
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IPA180N10N3G | Infineon Technologies |
Description: 28A, 100V, 0.018OHM, N-CHANNEL,Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO220-3-111 Vgs(th) (Max) @ Id: 3.5V @ 35µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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IPDD60R145CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 24A HDSOP-10Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 300µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V |
на замовлення 3296 шт: термін постачання 21-31 дні (днів) |
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TLE9862QXA40XUMA1 | Infineon Technologies |
Description: EMBEDDED POWERPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LINbus, SPI, SSC, UART/USART RAM Size: 8K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 27V Controller Series: TLE986x Program Memory Type: FLASH (256kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: PG-VQFN-48-29 Grade: Automotive Number of I/O: 10 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 4895 шт: термін постачання 21-31 дні (днів) |
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IRFS33N15DTRLP | Infineon Technologies |
Description: MOSFET N-CH 150V 33A D2PAK |
товару немає в наявності |
Мінімальне замовлення: 216 шт В кошику од. на суму грн. | ||||||||||||||||
| SP376251064XTMA1 | Infineon Technologies |
Description: TIRE PRESSURE SENSOR Packaging: Bulk |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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TT162N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 260A MODULE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1248KV18-400BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 165FBGADigiKey Programmable: Not Verified Memory Organization: 2M x 18 Memory Interface: Parallel Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 400 MHz Technology: SRAM - Synchronous, DDR II+ Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 36Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
на замовлення 398 шт: термін постачання 21-31 дні (днів) |
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CY7C1265KV18-450BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 165FBGADigiKey Programmable: Not Verified Memory Organization: 1M x 36 Memory Interface: Parallel Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 450 MHz Technology: SRAM - Synchronous, QDR II+ Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 36Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
на замовлення 172 шт: термін постачання 21-31 дні (днів) |
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TLS850D0TAV50ATMA1 | Infineon Technologies |
Description: IC REG LIN 5V 500MA PG-TO263-7-1Qualification: AEC-Q100 Grade: Automotive Current - Supply (Max): 82 µA Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 0.425V @ 250mA PSRR: 59dB (100Hz) Part Status: Active Control Features: Delay, Enable, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-TO263-7-1 Number of Regulators: 1 Voltage - Input (Max): 40V Current - Quiescent (Iq): 5 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
на замовлення 234 шт: термін постачання 21-31 дні (днів) |
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IPB100N06S2L05ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 100A TO263-3Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC0501NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 29A/100A TDSONInput Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC0501NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 29A/100A TDSONInput Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 11742 шт: термін постачання 21-31 дні (днів) |
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| 111-4183PBF | Infineon Technologies | Description: IC REG BUCK CTRLR SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KX8664FRIBE | Infineon Technologies |
Description: XC800 I-FAMILY 8051 8-BIT MCUDigiKey Programmable: Not Verified Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB147N03LGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 20A D2PAK |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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TC397XX256F300SBCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 16MB FLASH 292LFBGADigiKey Programmable: Not Verified Part Status: Obsolete Supplier Device Package: PG-LFBGA-292-10 Peripherals: DMA, I²S, PWM, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT Voltage - Supply (Vcc/Vdd): 3.3V, 5V Core Size: 32-Bit 6-Core Core Processor: TriCore™ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 6.75M x 8 Program Memory Size: 16MB (16M x 8) Speed: 300MHz Mounting Type: Surface Mount Package / Case: 292-LFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TC399XX256F300SBCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 16MB FLASH 516LFBGADigiKey Programmable: Not Verified RAM Size: 6.75M x 8 Program Memory Size: 16MB (16M x 8) Speed: 300MHz Mounting Type: Surface Mount Package / Case: 516-LFBGA Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: PG-LFBGA-516-10 Peripherals: DMA, I²S, PWM, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT Voltage - Supply (Vcc/Vdd): 3.3V, 5V Core Size: 32-Bit 6-Core Core Processor: TriCore™ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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XC87813FFA5VACKXUMA1 | Infineon Technologies |
Description: IC MCU 8BIT 52KB FLASH 64LQFPDigiKey Programmable: Not Verified Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 3.25K x 8 Program Memory Size: 52KB (52K x 8) Speed: 27MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Bulk Number of I/O: 40 Part Status: Not For New Designs Supplier Device Package: PG-LQFP-64-4 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: SPI, SSI, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: XC800 |
на замовлення 8328 шт: термін постачання 21-31 дні (днів) |
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TC212S8F133SCACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 80TQFPPackaging: Tape & Reel (TR) Package / Case: 80-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 512KB (512K x 8) RAM Size: 56K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.3V Connectivity: CANbus, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-80-7 Part Status: Active Number of I/O: 59 DigiKey Programmable: Not Verified |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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TC212S8F133SCACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 80TQFPPackaging: Cut Tape (CT) Package / Case: 80-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 133MHz Program Memory Size: 512KB (512K x 8) RAM Size: 56K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3.3V Connectivity: CANbus, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-80-7 Part Status: Active Number of I/O: 59 DigiKey Programmable: Not Verified |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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TC214L8F133NACKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 144TQFPEEPROM Size: 96K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 96K x 8 Program Memory Size: 512KB (512K x 8) Speed: 133MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Number of I/O: 120 Supplier Device Package: PG-TQFP-144-27 Peripherals: DMA, WDT Connectivity: CANbus, LINbus, QSPI Voltage - Supply (Vcc/Vdd): 3.3V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b SAR Core Processor: TriCore™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PEF22810TV2.1 | Infineon Technologies |
Description: IC LINE DRIVER Packaging: Bulk |
на замовлення 43425 шт: термін постачання 21-31 дні (днів) |
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| PEB22811HV1.3 | Infineon Technologies |
Description: IC LINE DRIVER CHIP Packaging: Bulk |
на замовлення 2453 шт: термін постачання 21-31 дні (днів) |
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| PEF22812FV2.2 | Infineon Technologies |
Description: IC LINE DRIVER CHIP Packaging: Bulk |
на замовлення 378 шт: термін постачання 21-31 дні (днів) |
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| PEF22818FV1.1 | Infineon Technologies |
Description: IC TRANS SINGLE PORT DIGITAL Packaging: Bulk |
на замовлення 28508 шт: термін постачання 21-31 дні (днів) |
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| PEF22812ELV2.2 | Infineon Technologies |
Description: IC LINE DRIVER CHIP Packaging: Bulk |
на замовлення 3140 шт: термін постачання 21-31 дні (днів) |
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| KP214E3022XTMA1 | Infineon Technologies |
Description: INTEGRATED PRESSURE SENS Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IKWH70N65WR6XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 122A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A Supplier Device Package: PG-TO247-3-32 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/378ns Switching Energy: 2.2mJ (on), 1.07mJ (off) Test Condition: 400V, 70A, 15Ohm, 15V Gate Charge: 269 nC Part Status: Active Current - Collector (Ic) (Max): 122 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 210 A Power - Max: 290 W |
на замовлення 330 шт: термін постачання 21-31 дні (днів) |
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TLI4971A050T5UE0001XUMA1 | Infineon Technologies |
Description: CURRENT SEN HE/OL 50A PG-TISONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 24mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 50A Supplier Device Package: PG-TISON-8-5 Part Status: Active Number of Channels: 1 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2264 шт: термін постачання 21-31 дні (днів) |
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BSC152N10NSFG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETCurrent - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 4V @ 72µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V |
на замовлення 9249 шт: термін постачання 21-31 дні (днів) |
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BSC118N10NSG | Infineon Technologies |
Description: BSC118N10 - 12V-300V N-CHANNEL PInput Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TDSON-8-1 Vgs(th) (Max) @ Id: 4V @ 70µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FP10R12W1T7PB3BPSA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Tray |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| FP10R12YT3BOMA1 | Infineon Technologies | Description: MOD IGBT LOW PWR EASY2-1 |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| FP10R12YT3B4BOMA1 | Infineon Technologies | Description: MOD IGBT LOW PWR EASY2-1 |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||
| FP25R12KT4_B15 | Infineon Technologies |
Description: FP25R12 - IGBT MODULEInput Capacitance (Cies) @ Vce: 1.45 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 160 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 28 A IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONO2-5-1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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FP25R12W2T7B11BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 25A AG-EASY2B-2Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: AG-EASY2B-2 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5.6 µA Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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FP25R12KT3BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 40A AG-ECONO2-8Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2-8 Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 105 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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FP25R12KS4CBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 40A 230W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Last Time Buy Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 230 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| IRGC75B60KB | Infineon Technologies |
Description: IGBT CHIPPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: Die IGBT Type: NPT Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BSZ0704LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 11A/40A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC1766192F80HLBDKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 1.5MB FLASH 176LQFPDigiKey Programmable: Not Verified Number of I/O: 81 Part Status: Discontinued at Digi-Key Supplier Device Package: PG-LQFP-176-2 Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, MLI, MSC, SSC Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V Core Size: 32-Bit Single-Core Data Converters: A/D 2x10b, 32x8b/10b/12b Core Processor: TriCore™ Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 108K x 8 Program Memory Size: 1.5MB (1.5M x 8) Speed: 80MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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BSO072N03S | Infineon Technologies |
Description: MOSFET N-CH 30V 12A 8DSO |
на замовлення 2183 шт: термін постачання 21-31 дні (днів) |
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TLE4263GMXUMA2 | Infineon Technologies |
Description: IC REG LIN 5V 200MA PG-DSO-14-61Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14-61 Voltage - Output (Min/Fixed): 5V Control Features: Reset, Wake-Up, Watchdog Grade: Automotive Part Status: Active PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 23 mA Qualification: AEC-Q100 |
на замовлення 2229 шт: термін постачання 21-31 дні (днів) |
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TLE94112ESRPIHATTOBO1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 24TSDSOFeatures: Charge Pump Packaging: Bulk Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: Logic, PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (12) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS Applications: DC Motors, General Purpose Voltage - Load: 3V ~ 5.5V Supplier Device Package: PG-TSDSO-24 Fault Protection: Current Limiting, Over Current, Over Temperature, Short Circuit Load Type: Inductive, Capacitive, Resistive Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IR21771SPBF-INF | Infineon Technologies |
Description: IC CURRENT SENSE 16SOIC Packaging: Bulk Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Current Sense Voltage - Input: 8V ~ 20V Operating Temperature: -40°C ~ 125°C Supplier Device Package: 16-SOIC Part Status: Active |
на замовлення 19800 шт: термін постачання 21-31 дні (днів) |
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| IPB60R070CFD7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 31A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 1712 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 509.48 грн |
| 10+ | 330.97 грн |
| 50+ | 262.65 грн |
| 100+ | 225.87 грн |
| 500+ | 215.40 грн |
| IPB60R040CFD7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 600V 50A TO263-3
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 281.80 грн |
| IPB60R040CFD7ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 50A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4351 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 2881 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 673.30 грн |
| 10+ | 444.12 грн |
| 50+ | 356.73 грн |
| 100+ | 311.71 грн |
| IPD60R750E6BTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 5.7A TO252
Description: MOSFET N-CH 600V 5.7A TO252
на замовлення 36500 шт:
термін постачання 21-31 дні (днів)
| IPD60R380E6ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
на замовлення 6650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 315+ | 65.11 грн |
| IPD60R800CEAUMA1 |
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Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
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| IPA126N10N3G |
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Виробник: Infineon Technologies
Description: 35A, 100V, 0.0126OHM, N-CHANNEL
Description: 35A, 100V, 0.0126OHM, N-CHANNEL
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 399+ | 53.74 грн |
| CHL8328-35CRT |
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Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Description: IC REG CTRLR DDR 2OUT 56VQFN
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| IAUC41N06S5L100ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 41A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tj)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 5000 шт
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| ICE5QR1680BGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| ICE5QR1680BGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 50 W
на замовлення 771 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.25 грн |
| 10+ | 115.78 грн |
| 25+ | 105.70 грн |
| 100+ | 88.75 грн |
| 250+ | 83.78 грн |
| 500+ | 81.38 грн |
| IPC302N15N3X7SA1 |
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Виробник: Infineon Technologies
Description: MV POWER MOS
Drain to Source Voltage (Vdss): 150 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 4V @ 270µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: MV POWER MOS
Drain to Source Voltage (Vdss): 150 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 4V @ 270µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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| FZ400R17KE3S4HOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Description: IGBT MOD 1700V 620A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 363 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 8768.53 грн |
| FS225R12KE4BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 1561 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 25768.69 грн |
| FD400R07PE4RB6BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Description: IGBT MOD 650V 460A 1150W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1150 W
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 267 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 11288.89 грн |
| IPA180N10N3G |
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Виробник: Infineon Technologies
Description: 28A, 100V, 0.018OHM, N-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: 28A, 100V, 0.018OHM, N-CHANNEL,
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 35µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 55.64 грн |
| IPDD60R145CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
Description: MOSFET N-CH 600V 24A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1199 pF @ 400 V
на замовлення 3296 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.20 грн |
| 10+ | 184.92 грн |
| 100+ | 133.99 грн |
| 500+ | 100.38 грн |
| TLE9862QXA40XUMA1 |
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Виробник: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SPI, SSC, UART/USART
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 27V
Controller Series: TLE986x
Program Memory Type: FLASH (256kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4895 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 395.83 грн |
| 10+ | 292.18 грн |
| 25+ | 269.85 грн |
| 100+ | 230.24 грн |
| 250+ | 219.27 грн |
| 500+ | 212.65 грн |
| 1000+ | 203.81 грн |
| IRFS33N15DTRLP |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
Description: MOSFET N-CH 150V 33A D2PAK
товару немає в наявності
Мінімальне замовлення: 216 шт
В кошику
од. на суму грн.
| SP376251064XTMA1 |
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 206.79 грн |
| TT162N16KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 260A MODULE
Description: SCR MODULE 1.6KV 260A MODULE
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| CY7C1248KV18-400BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 36MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
на замовлення 398 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1470.44 грн |
| CY7C1265KV18-450BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 36MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1687.55 грн |
| TLS850D0TAV50ATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TO263-7-1
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 82 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.425V @ 250mA
PSRR: 59dB (100Hz)
Part Status: Active
Control Features: Delay, Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-7-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: IC REG LIN 5V 500MA PG-TO263-7-1
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 82 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.425V @ 250mA
PSRR: 59dB (100Hz)
Part Status: Active
Control Features: Delay, Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-7-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 5 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 234 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 214.77 грн |
| 10+ | 154.73 грн |
| 25+ | 141.84 грн |
| 100+ | 119.79 грн |
| IPB100N06S2L05ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 100A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 55V 100A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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| BSC0501NSIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 41.49 грн |
| BSC0501NSIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 11742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.71 грн |
| 10+ | 78.72 грн |
| 100+ | 55.63 грн |
| 500+ | 42.55 грн |
| 1000+ | 39.39 грн |
| 2000+ | 37.49 грн |
| 111-4183PBF |
Виробник: Infineon Technologies
Description: IC REG BUCK CTRLR SMD
Description: IC REG BUCK CTRLR SMD
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| KX8664FRIBE |
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Виробник: Infineon Technologies
Description: XC800 I-FAMILY 8051 8-BIT MCU
DigiKey Programmable: Not Verified
Packaging: Bulk
Description: XC800 I-FAMILY 8051 8-BIT MCU
DigiKey Programmable: Not Verified
Packaging: Bulk
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| IPB147N03LGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A D2PAK
Description: MOSFET N-CH 30V 20A D2PAK
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 644+ | 32.21 грн |
| TC397XX256F300SBCKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-292-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-292-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
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| TC399XX256F300SBCKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
DigiKey Programmable: Not Verified
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 516-LFBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-516-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
DigiKey Programmable: Not Verified
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 516-LFBGA
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-LFBGA-516-10
Peripherals: DMA, I²S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit 6-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
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| XC87813FFA5VACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 52KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 3.25K x 8
Program Memory Size: 52KB (52K x 8)
Speed: 27MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Number of I/O: 40
Part Status: Not For New Designs
Supplier Device Package: PG-LQFP-64-4
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SPI, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Description: IC MCU 8BIT 52KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 3.25K x 8
Program Memory Size: 52KB (52K x 8)
Speed: 27MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Number of I/O: 40
Part Status: Not For New Designs
Supplier Device Package: PG-LQFP-64-4
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SPI, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
на замовлення 8328 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 126+ | 160.02 грн |
| TC212S8F133SCACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1800+ | 764.67 грн |
| TC212S8F133SCACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 133MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1232.16 грн |
| 10+ | 942.65 грн |
| 25+ | 881.68 грн |
| 100+ | 764.51 грн |
| 250+ | 762.67 грн |
| TC214L8F133NACKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 144TQFP
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 96K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 133MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: PG-TQFP-144-27
Peripherals: DMA, WDT
Connectivity: CANbus, LINbus, QSPI
Voltage - Supply (Vcc/Vdd): 3.3V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b SAR
Core Processor: TriCore™
Description: IC MCU 32BIT 512KB FLASH 144TQFP
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 96K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 133MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: PG-TQFP-144-27
Peripherals: DMA, WDT
Connectivity: CANbus, LINbus, QSPI
Voltage - Supply (Vcc/Vdd): 3.3V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b SAR
Core Processor: TriCore™
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од. на суму грн.
| PEF22810TV2.1 |
на замовлення 43425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 222+ | 100.16 грн |
| PEB22811HV1.3 |
на замовлення 2453 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 79+ | 284.24 грн |
| PEF22812FV2.2 |
на замовлення 378 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 971.11 грн |
| PEF22818FV1.1 |
на замовлення 28508 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 1077.97 грн |
| PEF22812ELV2.2 |
на замовлення 3140 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 1310.91 грн |
| KP214E3022XTMA1 |
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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од. на суму грн.
| IKWH70N65WR6XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 122A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/378ns
Switching Energy: 2.2mJ (on), 1.07mJ (off)
Test Condition: 400V, 70A, 15Ohm, 15V
Gate Charge: 269 nC
Part Status: Active
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
Description: IGBT TRENCH FS 650V 122A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/378ns
Switching Energy: 2.2mJ (on), 1.07mJ (off)
Test Condition: 400V, 70A, 15Ohm, 15V
Gate Charge: 269 nC
Part Status: Active
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 343.31 грн |
| 30+ | 184.90 грн |
| 120+ | 152.76 грн |
| TLI4971A050T5UE0001XUMA1 |
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Виробник: Infineon Technologies
Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Description: CURRENT SEN HE/OL 50A PG-TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2264 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.77 грн |
| 5+ | 235.04 грн |
| 10+ | 224.77 грн |
| 25+ | 199.41 грн |
| 50+ | 191.58 грн |
| 100+ | 184.39 грн |
| 500+ | 167.15 грн |
| 1000+ | 161.85 грн |
| BSC152N10NSFG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 4V @ 72µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 25A, 10V
на замовлення 9249 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 204+ | 101.60 грн |
| BSC118N10NSG |
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Виробник: Infineon Technologies
Description: BSC118N10 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Description: BSC118N10 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 70µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 71A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
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| FP10R12W1T7PB3BPSA1 |
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3568.71 грн |
| 10+ | 3061.78 грн |
| 30+ | 2879.43 грн |
| FP10R12YT3BOMA1 |
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Description: MOD IGBT LOW PWR EASY2-1
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Мінімальне замовлення: 20 шт
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| FP10R12YT3B4BOMA1 |
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR EASY2-1
Description: MOD IGBT LOW PWR EASY2-1
товару немає в наявності
Мінімальне замовлення: 20 шт
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| FP25R12KT4_B15 |
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Виробник: Infineon Technologies
Description: FP25R12 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 28 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2-5-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: FP25R12 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 28 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2-5-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 4205.43 грн |
| FP25R12W2T7B11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
Description: IGBT MOD 1200V 25A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5.6 µA
Input Capacitance (Cies) @ Vce: 4.77 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3157.21 грн |
| FP25R12KT3BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 40A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Description: IGBT MOD 1200V 40A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4832.22 грн |
| FP25R12KS4CBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
Description: IGBT MOD 1200V 40A 230W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 230 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
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| IRGC75B60KB |
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Виробник: Infineon Technologies
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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| BSZ0704LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET N-CH 60V 11A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
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| TC1766192F80HLBDKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-LQFP-176-2
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, MLI, MSC, SSC
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x10b, 32x8b/10b/12b
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 108K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
DigiKey Programmable: Not Verified
Number of I/O: 81
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-LQFP-176-2
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, MLI, MSC, SSC
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x10b, 32x8b/10b/12b
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 108K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| BSO072N03S |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8DSO
Description: MOSFET N-CH 30V 12A 8DSO
на замовлення 2183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 626+ | 36.29 грн |
| TLE4263GMXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 200MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Wake-Up, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
Description: IC REG LIN 5V 200MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Wake-Up, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
на замовлення 2229 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.60 грн |
| 10+ | 160.62 грн |
| 25+ | 147.24 грн |
| 100+ | 124.34 грн |
| 250+ | 117.75 грн |
| 500+ | 113.77 грн |
| 1000+ | 108.68 грн |
| TLE94112ESRPIHATTOBO1 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 24TSDSO
Features: Charge Pump
Packaging: Bulk
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (12)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 3V ~ 5.5V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Current, Over Temperature, Short Circuit
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24TSDSO
Features: Charge Pump
Packaging: Bulk
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: Logic, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (12)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 1.3Ohm LS, 1.3Ohm HS
Applications: DC Motors, General Purpose
Voltage - Load: 3V ~ 5.5V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Current, Over Temperature, Short Circuit
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2655.56 грн |
| IR21771SPBF-INF |
Виробник: Infineon Technologies
Description: IC CURRENT SENSE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 8V ~ 20V
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 16-SOIC
Part Status: Active
Description: IC CURRENT SENSE 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 8V ~ 20V
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 16-SOIC
Part Status: Active
на замовлення 19800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 64+ | 338.72 грн |





































