Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122992) > Сторінка 396 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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ICB1FL02G | Infineon Technologies |
Description: FLUORESCENT LIGHT CONTROLLER, VOPackaging: Bulk Package / Case: 18-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Frequency: 20kHz ~ 150kHz Type: PFC/Ballast Controller Operating Temperature: -25°C ~ 125°C (TJ) Voltage - Supply: 10.5V ~ 17.5V Supplier Device Package: PG-DSO-18-2 Dimming: No Current - Supply: 5 mA |
на замовлення 525 шт: термін постачання 21-31 дні (днів) |
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ICB1FL02GXUMA1 | Infineon Technologies |
Description: IC PFC/BALLAST CTR 100KHZ DSO-18Packaging: Bulk Package / Case: 18-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Frequency: 20kHz ~ 100kHz Type: PFC/Ballast Controller Operating Temperature: -25°C ~ 125°C Voltage - Supply: 10.5V ~ 17.5V Supplier Device Package: PG-DSO-18-2 Dimming: No Current - Supply: 5 mA |
на замовлення 61000 шт: термін постачання 21-31 дні (днів) |
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MB95F283KPF-G-SNERE1 | Infineon Technologies |
Description: IC MCU 8BIT 128KB FLASH 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 128KB (128K x 8) RAM Size: 496 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 5x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: LINbus, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 16-SOP Part Status: Obsolete Number of I/O: 13 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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TLE49643MXTMA1 | Infineon Technologies |
Description: MAG SWITCH IC HALL EFF SOT23-3Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 2mA Sensing Range: ±5mT Trip, ±4.2mT Release Technology: Hall Effect Voltage - Supply: 2.7V ~ 32V Operating Temperature: -40°C ~ 170°C Function: Unipolar Switch Mounting Type: Surface Mount Polarization: Either Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLE49643MXTMA1 | Infineon Technologies |
Description: MAG SWITCH IC HALL EFF SOT23-3Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 2mA Sensing Range: ±5mT Trip, ±4.2mT Release Technology: Hall Effect Voltage - Supply: 2.7V ~ 32V Operating Temperature: -40°C ~ 170°C Function: Unipolar Switch Mounting Type: Surface Mount Polarization: Either Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 22270 шт: термін постачання 21-31 дні (днів) |
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TLE4964-1M | Infineon Technologies |
Description: TLE4964 - HALL SWITCHPart Status: Active Test Condition: 25°C Supplier Device Package: PG-SOT23-3 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 23.5mT Trip, 8.4mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Unipolar Switch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLE49642MXTMA1 | Infineon Technologies |
Description: MAG SWITCH UNIPOLAR SOT23-3Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 36mT Trip, 15.9mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Unipolar Switch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 9816 шт: термін постачання 21-31 дні (днів) |
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TLE49644MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH UNIPOLAR SOT23-3Qualification: AEC-Q100 Grade: Automotive Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Sensing Range: 13.5mT Trip, 5.4mT Release Technology: Hall Effect Voltage - Supply: 3V ~ 32V Operating Temperature: -40°C ~ 170°C (TJ) Function: Unipolar Switch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Drain Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLE49644MXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH UNIPOLAR SOT23-3Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 13.5mT Trip, 5.4mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SOT23-3-15 Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 937 шт: термін постачання 21-31 дні (днів) |
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TLE49641KXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH UNIPOLAR SC59Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 18mT Trip, 12.5mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SC59-3 Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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TLE49641KXTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH UNIPOLAR SC59Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 18mT Trip, 12.5mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SC59-3 Test Condition: 25°C Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2989 шт: термін постачання 21-31 дні (днів) |
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TLE49645MXTMA1 | Infineon Technologies |
Description: MAG SWITCH IC HALL EFF SOT23-3Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Collector Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 150°C Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 13.9mT Trip, 5mT Release Current - Output (Max): 20mA Current - Supply (Max): 6mA Supplier Device Package: PG-SOT23-3-15 Test Condition: 25°C |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLE49645MXTMA1 | Infineon Technologies |
Description: MAG SWITCH IC HALL EFF SOT23-3Test Condition: 25°C Supplier Device Package: PG-SOT23-3-15 Current - Supply (Max): 6mA Current - Output (Max): 20mA Sensing Range: 13.9mT Trip, 5mT Release Technology: Hall Effect Voltage - Supply: 2.7V ~ 18V Operating Temperature: -40°C ~ 150°C Function: Unipolar Switch Mounting Type: Surface Mount Polarization: South Pole Output Type: Open Collector Package / Case: TO-236-3, SC-59, SOT-23-3 Features: Temperature Compensated Packaging: Cut Tape (CT) |
на замовлення 29037 шт: термін постачання 21-31 дні (днів) |
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TLE49641MXTMA1 | Infineon Technologies |
Description: MAG SWITCH IC HALL EFF SOT23-3Qualification: AEC-Q100 Grade: Automotive Part Status: Active Operating Temperature: -40°C ~ 170°C (TJ) Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLE49641MXTMA1 | Infineon Technologies |
Description: MAG SWITCH IC HALL EFF SOT23-3Qualification: AEC-Q100 Grade: Automotive Part Status: Active Operating Temperature: -40°C ~ 170°C (TJ) Packaging: Cut Tape (CT) |
на замовлення 18995 шт: термін постачання 21-31 дні (днів) |
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| BTS5233-2GS | Infineon Technologies |
Description: PMIC - POWER DISTRIBUTION SWITCH Packaging: Bulk Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| BTS52332GSXUMA1 | Infineon Technologies |
Description: PMIC - POWER DISTRIBUTION SWITCH Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BTS52372GXUMA1 | Infineon Technologies |
Description: PMIC - POWER DISTRIBUTION SWITCH Packaging: Bulk Part Status: Active |
на замовлення 98000 шт: термін постачання 21-31 дні (днів) |
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| BTS5264SFXUMA1 | Infineon Technologies |
Description: PMIC - POWER DISTRIBUTION SWITCH Packaging: Bulk Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLE4470GXUMA2 | Infineon Technologies |
Description: IC REG LINEAR POS ADJ 14DSOControl Features: Enable, Reset Voltage - Output (Min/Fixed): 5V, (5V), Tracking Voltage - Output (Max): 20V Supplier Device Package: PG-DSO-14 Number of Regulators: 2 Voltage - Input (Max): 45V Current - Quiescent (Iq): 500 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 100mA, 250mA Mounting Type: Surface Mount Output Type: Adjustable (Fixed) Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Current - Supply (Max): 15 mA Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA PSRR: 60dB (20Hz ~ 20kHz) Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCX68-16 | Infineon Technologies |
Description: TRANS NPN 20V 1A SOT89Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: PG-SOT89 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCX68-25 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2812 шт В кошику од. на суму грн. | ||||||||||||||||||
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BCX68-25E6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 2812 шт В кошику од. на суму грн. | ||||||||||||||||||
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BCX68-16E6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPower - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: PG-SOT89-4-2 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCX6816E6327HTSA1 | Infineon Technologies |
Description: TRANS NPN 20V 1A PG-SOT89Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: PG-SOT89 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Bulk |
на замовлення 31400 шт: термін постачання 21-31 дні (днів) |
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BCX6816H6327XTSA1 | Infineon Technologies |
Description: TRANS NPN 20V 1A PG-SOT89Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Bulk Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 1 A Part Status: Last Time Buy Supplier Device Package: PG-SOT89 Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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BTS3118D | Infineon Technologies |
Description: BTS3118 - HITFET, AUTOMOTIVE SMAPart Status: Active Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: PG-TO252-3-11 Ratio - Input:Output: 1:1 Current - Output (Max): 2.4A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 42V Input Type: Non-Inverting Rds On (Typ): 70mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Features: Slew Rate Controlled Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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S26KS128SDGBHA030 | Infineon Technologies |
Description: IC FLASH 128MBIT HYPERBUS 24FBGAQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Memory Interface: HyperBus Part Status: Active Supplier Device Package: 24-FBGA (6x8) Memory Format: FLASH Clock Frequency: 133 MHz Technology: FLASH - NOR Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 128Mbit Mounting Type: Surface Mount Package / Case: 24-VBGA Packaging: Tray Memory Organization: 16M x 8 Access Time: 96 ns |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | ||||||||||||||||||
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BSZ0910NDXTMA1 | Infineon Technologies |
Description: DIFFERENTIATED MOSFETSPart Status: Obsolete Supplier Device Package: PG-WISON-8 Vgs(th) (Max) @ Id: 2V @ 250µA FET Feature: Logic Level Gate, 4.5V Drive Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.9W (Ta), 31W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSZ0910NDXTMA1 | Infineon Technologies |
Description: DIFFERENTIATED MOSFETSPart Status: Obsolete Supplier Device Package: PG-WISON-8 Vgs(th) (Max) @ Id: 2V @ 250µA FET Feature: Logic Level Gate, 4.5V Drive Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.9W (Ta), 31W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPA052N08NM5SXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 64A TO220Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO220 Full Pack Vgs(th) (Max) @ Id: 3.8V @ 65µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 32A, 10V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 249 шт: термін постачання 21-31 дні (днів) |
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IRF150P220AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 203A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 203A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 556W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 265µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF150P221AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 186A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 186A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 264µA Supplier Device Package: PG-TO247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PBL38621/2SOT | Infineon Technologies |
Description: IC TELECOM INTERFACE PDSO-24Packaging: Bulk Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 2.8mA Supplier Device Package: PG-DSO-24-8 Number of Circuits: 1 Power (Watts): 290 mW |
на замовлення 393 шт: термін постачання 21-31 дні (днів) |
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PBL38620/2SHA | Infineon Technologies |
Description: IC TELECOM INTERFACE 24-SSOPPackaging: Bulk Package / Case: 24-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 2.8mA Supplier Device Package: PG-SSOP-24-1 Part Status: Obsolete Number of Circuits: 1 Power (Watts): 290 mW |
на замовлення 78000 шт: термін постачання 21-31 дні (днів) |
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CY7C1382B-133AC | Infineon Technologies |
Description: IC SRAM 18MBIT 133MHZ 100LQFPPackaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 4.2 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
на замовлення 295 шт: термін постачання 21-31 дні (днів) |
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BSP321PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 980MA SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 980mA (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: PG-SOT223-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V |
на замовлення 371 шт: термін постачання 21-31 дні (днів) |
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BTS500251TADATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7Part Status: Obsolete Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit Supplier Device Package: P/PG-TO-263-7-10 Ratio - Input:Output: 1:1 Current - Output (Max): 25A Qualification: AEC-Q100 Grade: Automotive Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 8V ~ 18V Input Type: Non-Inverting Rds On (Typ): 3.9mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Packaging: Tape & Reel (TR) |
товару немає в наявності |
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MB90F349CEPF-G-N2E1 | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 100QFP DigiKey Programmable: Not Verified Number of I/O: 80 Part Status: Obsolete Supplier Device Package: 100-QFP (14x20) Peripherals: DMA, POR, WDT Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 24x8/10b Core Processor: F²MC-16LX Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 256KB (256K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 100-BQFP Packaging: Bulk |
товару немає в наявності |
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MB90F349CESPMC-G-N9E1 | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH 100LQFP Packaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 256KB (256K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 24x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: 100-LQFP (14x14) Part Status: Obsolete Number of I/O: 82 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSZ039N06NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 18A/40A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 36µA Supplier Device Package: PG-TSDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SPP35N10 | Infineon Technologies |
Description: MOSFET N-CH 100V 35A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V |
на замовлення 30405 шт: термін постачання 21-31 дні (днів) |
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IPB35N10S3L26ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 35A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 39µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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IPB35N10S3L26ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 35A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 39µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 7012 шт: термін постачання 21-31 дні (днів) |
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TLS810D1LDV33BOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS810D1LDV33Packaging: Box Voltage - Output: 3.3V Voltage - Input: 3V ~ 42V Current - Output: 100mA Contents: Board(s) Regulator Type: Positive Fixed Utilized IC / Part: TLS810D1LDV33 Channels per IC: 1 - Single |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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CY9AF131KAPMC-G-SNE2 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 48LQFP Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 8K x 8 Program Memory Size: 64KB (64K x 8) Speed: 20MHz Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 37 Supplier Device Package: 48-LQFP (7x7) Peripherals: LVD, POR, PWM, WDT Connectivity: CSIO, I2C, UART/USART Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 6x12b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BUZ77B | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IPU80R2K8CEAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 1.9A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V |
на замовлення 14499 шт: термін постачання 21-31 дні (днів) |
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IPU80R2K8CEAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 1.9A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 120µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPU80R1K4CEAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 3.9A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 240µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPU80R1K0CEBKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 5.7A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V |
на замовлення 1410 шт: термін постачання 21-31 дні (днів) |
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IPU80R1K0CEAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 5.7A TO251-3Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO251-3-341 Vgs(th) (Max) @ Id: 3.9V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk |
на замовлення 124500 шт: термін постачання 21-31 дні (днів) |
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IPU80R1K0CEAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 800V 5.7A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: PG-TO251-3-341 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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DEMOBGT60LTR11AIPTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR BGT60LTR11AIPPackaging: Box For Use With/Related Products: BGT60LTR11AIP Frequency: 60GHz Type: Transceiver; RADAR Supplied Contents: Board(s) Part Status: Active Sensitivity: 60GHz Sensor Type: Radar Utilized IC / Part: BGT60LTR11AIP Sensing Range: 7m Contents: Board(s) |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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| PEF 22554 E V2.1 | Infineon Technologies |
Description: IC TELECOM INTERFACE 160LBGA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
| PEF 22554 E V2.1-G | Infineon Technologies |
Description: IC TELECOM INTERFACE 160LBGAPackaging: Tray Package / Case: 160-LBGA Mounting Type: Surface Mount Function: Framer, Line Interface Unit (LIU) Interface: E1, HDLC, J1, T1 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V, 3.3V Supplier Device Package: P/PG-LBGA-160-1 Number of Circuits: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCR430UXTSA2 | Infineon Technologies |
Description: IC LED DRV LIN PWM 100MA SOT23-6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Voltage - Output: 42V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Applications: LED Lighting Current - Output / Channel: 100mA Internal Switch(s): No Topology: Constant Current Supplier Device Package: PG-SOT23-6-1 Dimming: PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 42V Part Status: Active |
на замовлення 51000 шт: термін постачання 21-31 дні (днів) |
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ISZ065N03L5SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 12A/40A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BSZ0909LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 19A/40A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ISZ0501NLSATMA1 | Infineon Technologies |
Description: 25V, N-CH MOSFET, LOGIC LEVEL, PPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-25 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. |
| ICB1FL02G |
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Виробник: Infineon Technologies
Description: FLUORESCENT LIGHT CONTROLLER, VO
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 150kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10.5V ~ 17.5V
Supplier Device Package: PG-DSO-18-2
Dimming: No
Current - Supply: 5 mA
Description: FLUORESCENT LIGHT CONTROLLER, VO
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 150kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10.5V ~ 17.5V
Supplier Device Package: PG-DSO-18-2
Dimming: No
Current - Supply: 5 mA
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 217+ | 98.72 грн |
| ICB1FL02GXUMA1 |
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Виробник: Infineon Technologies
Description: IC PFC/BALLAST CTR 100KHZ DSO-18
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 100kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10.5V ~ 17.5V
Supplier Device Package: PG-DSO-18-2
Dimming: No
Current - Supply: 5 mA
Description: IC PFC/BALLAST CTR 100KHZ DSO-18
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 100kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10.5V ~ 17.5V
Supplier Device Package: PG-DSO-18-2
Dimming: No
Current - Supply: 5 mA
на замовлення 61000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 193+ | 110.52 грн |
| MB95F283KPF-G-SNERE1 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 128KB FLASH 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 5x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of I/O: 13
Description: IC MCU 8BIT 128KB FLASH 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 5x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of I/O: 13
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 78.59 грн |
| TLE49643MXTMA1 |
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Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 2mA
Sensing Range: ±5mT Trip, ±4.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 32V
Operating Temperature: -40°C ~ 170°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: Either
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 2mA
Sensing Range: ±5mT Trip, ±4.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 32V
Operating Temperature: -40°C ~ 170°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: Either
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 16.74 грн |
| TLE49643MXTMA1 |
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Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 2mA
Sensing Range: ±5mT Trip, ±4.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 32V
Operating Temperature: -40°C ~ 170°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: Either
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 2mA
Sensing Range: ±5mT Trip, ±4.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 32V
Operating Temperature: -40°C ~ 170°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: Either
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 22270 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.12 грн |
| 10+ | 42.31 грн |
| 25+ | 36.47 грн |
| 50+ | 33.00 грн |
| 100+ | 28.11 грн |
| 500+ | 24.44 грн |
| 1000+ | 21.04 грн |
| 5000+ | 18.63 грн |
| TLE4964-1M |
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Виробник: Infineon Technologies
Description: TLE4964 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 23.5mT Trip, 8.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Bulk
Description: TLE4964 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 23.5mT Trip, 8.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TLE49642MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 36mT Trip, 15.9mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 36mT Trip, 15.9mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 9816 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.04 грн |
| 8+ | 39.40 грн |
| 10+ | 36.79 грн |
| 25+ | 31.48 грн |
| 50+ | 29.36 грн |
| 100+ | 27.37 грн |
| 500+ | 22.86 грн |
| 1000+ | 21.30 грн |
| 5000+ | 18.06 грн |
| TLE49644MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, 5.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, 5.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLE49644MXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 937 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 10+ | 30.89 грн |
| 11+ | 29.25 грн |
| 25+ | 25.60 грн |
| 50+ | 24.34 грн |
| 100+ | 23.19 грн |
| 500+ | 20.53 грн |
| TLE49641KXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLE49641KXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2989 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.77 грн |
| 10+ | 46.19 грн |
| 25+ | 39.76 грн |
| 50+ | 35.98 грн |
| 100+ | 30.65 грн |
| 500+ | 26.65 грн |
| 1000+ | 22.94 грн |
| TLE49645MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Description: MAG SWITCH IC HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 16.59 грн |
| TLE49645MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.9mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 150°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Collector
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.9mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 150°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Collector
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
на замовлення 29037 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.42 грн |
| 10+ | 30.89 грн |
| 11+ | 29.25 грн |
| 25+ | 25.60 грн |
| 50+ | 24.34 грн |
| 100+ | 23.19 грн |
| 500+ | 20.53 грн |
| 1000+ | 19.69 грн |
| 5000+ | 17.99 грн |
| TLE49641MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Operating Temperature: -40°C ~ 170°C (TJ)
Packaging: Tape & Reel (TR)
Description: MAG SWITCH IC HALL EFF SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Operating Temperature: -40°C ~ 170°C (TJ)
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 19.01 грн |
| TLE49641MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Operating Temperature: -40°C ~ 170°C (TJ)
Packaging: Cut Tape (CT)
Description: MAG SWITCH IC HALL EFF SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Operating Temperature: -40°C ~ 170°C (TJ)
Packaging: Cut Tape (CT)
на замовлення 18995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.30 грн |
| 10+ | 30.45 грн |
| 25+ | 26.22 грн |
| 50+ | 24.68 грн |
| 100+ | 23.30 грн |
| 500+ | 20.30 грн |
| 1000+ | 19.36 грн |
| 5000+ | 17.54 грн |
| BTS5233-2GS |
Виробник: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1039+ | 20.75 грн |
| BTS52332GSXUMA1 |
Виробник: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BTS52372GXUMA1 |
Виробник: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 98000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 297+ | 72.25 грн |
| BTS5264SFXUMA1 |
Виробник: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 334.09 грн |
| TLE4470GXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 14DSO
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V, (5V), Tracking
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-14
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 500 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA, 250mA
Mounting Type: Surface Mount
Output Type: Adjustable (Fixed)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply (Max): 15 mA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA
PSRR: 60dB (20Hz ~ 20kHz)
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LINEAR POS ADJ 14DSO
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V, (5V), Tracking
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-14
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 500 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA, 250mA
Mounting Type: Surface Mount
Output Type: Adjustable (Fixed)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply (Max): 15 mA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA
PSRR: 60dB (20Hz ~ 20kHz)
Qualification: AEC-Q100
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| BCX68-16 |
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Виробник: Infineon Technologies
Description: TRANS NPN 20V 1A SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Description: TRANS NPN 20V 1A SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BCX68-25 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| BCX68-25E6327 |
![]() |
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)
| BCX68-16E6327 |
![]() |
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89-4-2
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89-4-2
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BCX6816E6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Description: TRANS NPN 20V 1A PG-SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
на замовлення 31400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1598+ | 14.04 грн |
| BCX6816H6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Last Time Buy
Supplier Device Package: PG-SOT89
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS NPN 20V 1A PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Last Time Buy
Supplier Device Package: PG-SOT89
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1224+ | 18.47 грн |
| BTS3118D |
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Виробник: Infineon Technologies
Description: BTS3118 - HITFET, AUTOMOTIVE SMA
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO252-3-11
Ratio - Input:Output: 1:1
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V
Input Type: Non-Inverting
Rds On (Typ): 70mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Slew Rate Controlled
Packaging: Bulk
Description: BTS3118 - HITFET, AUTOMOTIVE SMA
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO252-3-11
Ratio - Input:Output: 1:1
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V
Input Type: Non-Inverting
Rds On (Typ): 70mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Slew Rate Controlled
Packaging: Bulk
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| S26KS128SDGBHA030 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 16M x 8
Access Time: 96 ns
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 16M x 8
Access Time: 96 ns
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| BSZ0910NDXTMA1 |
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Виробник: Infineon Technologies
Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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| BSZ0910NDXTMA1 |
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Виробник: Infineon Technologies
Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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| IPA052N08NM5SXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 64A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 80V 64A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 196.83 грн |
| 50+ | 94.29 грн |
| 100+ | 85.02 грн |
| IRF150P220AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 203A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 265µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V
Description: MOSFET N-CH 150V 203A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 265µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V
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| IRF150P221AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 186A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
Description: MOSFET N-CH 150V 186A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
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| PBL38621/2SOT |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
на замовлення 393 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 94+ | 212.44 грн |
| PBL38620/2SHA |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 24-SSOP
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
Description: IC TELECOM INTERFACE 24-SSOP
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 263.79 грн |
| CY7C1382B-133AC |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT 133MHZ 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4.2 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT 133MHZ 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4.2 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 1107.15 грн |
| BSP321PH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
на замовлення 371 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.29 грн |
| 10+ | 62.38 грн |
| 100+ | 41.33 грн |
| BTS500251TADATMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Part Status: Obsolete
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Supplier Device Package: P/PG-TO-263-7-10
Ratio - Input:Output: 1:1
Current - Output (Max): 25A
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 3.9mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Part Status: Obsolete
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Supplier Device Package: P/PG-TO-263-7-10
Ratio - Input:Output: 1:1
Current - Output (Max): 25A
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 3.9mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
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| MB90F349CEPF-G-N2E1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Part Status: Obsolete
Supplier Device Package: 100-QFP (14x20)
Peripherals: DMA, POR, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Part Status: Obsolete
Supplier Device Package: 100-QFP (14x20)
Peripherals: DMA, POR, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
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| MB90F349CESPMC-G-N9E1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
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| BSZ039N06NSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 49.26 грн |
| SPP35N10 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Description: MOSFET N-CH 100V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
на замовлення 30405 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 278+ | 70.64 грн |
| IPB35N10S3L26ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 68.42 грн |
| 2000+ | 61.29 грн |
| 3000+ | 58.95 грн |
| 5000+ | 52.85 грн |
| 7000+ | 52.25 грн |
| IPB35N10S3L26ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.35 грн |
| 10+ | 128.20 грн |
| 100+ | 88.38 грн |
| 500+ | 66.97 грн |
| TLS810D1LDV33BOARDTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS810D1LDV33
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810D1LDV33
Channels per IC: 1 - Single
Description: EVAL BOARD FOR TLS810D1LDV33
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810D1LDV33
Channels per IC: 1 - Single
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4082.99 грн |
| CY9AF131KAPMC-G-SNE2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
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| BUZ77B |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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| IPU80R2K8CEAKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
на замовлення 14499 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 586+ | 33.90 грн |
| IPU80R2K8CEAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
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| IPU80R1K4CEAKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
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| IPU80R1K0CEBKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 1410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 354+ | 56.68 грн |
| IPU80R1K0CEAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-341
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Description: MOSFET N-CH 800V 5.7A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-341
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
на замовлення 124500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 253+ | 79.10 грн |
| IPU80R1K0CEAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-341
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Description: MOSFET N-CH 800V 5.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-341
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
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| DEMOBGT60LTR11AIPTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Box
For Use With/Related Products: BGT60LTR11AIP
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Active
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60LTR11AIP
Sensing Range: 7m
Contents: Board(s)
Description: EVAL BOARD FOR BGT60LTR11AIP
Packaging: Box
For Use With/Related Products: BGT60LTR11AIP
Frequency: 60GHz
Type: Transceiver; RADAR
Supplied Contents: Board(s)
Part Status: Active
Sensitivity: 60GHz
Sensor Type: Radar
Utilized IC / Part: BGT60LTR11AIP
Sensing Range: 7m
Contents: Board(s)
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9589.48 грн |
| 10+ | 9213.65 грн |
| PEF 22554 E V2.1 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 160LBGA
Description: IC TELECOM INTERFACE 160LBGA
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| PEF 22554 E V2.1-G |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 160LBGA
Packaging: Tray
Package / Case: 160-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, HDLC, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: P/PG-LBGA-160-1
Number of Circuits: 4
Description: IC TELECOM INTERFACE 160LBGA
Packaging: Tray
Package / Case: 160-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, HDLC, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: P/PG-LBGA-160-1
Number of Circuits: 4
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| BCR430UXTSA2 |
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Виробник: Infineon Technologies
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
Description: IC LED DRV LIN PWM 100MA SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Voltage - Output: 42V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 100mA
Internal Switch(s): No
Topology: Constant Current
Supplier Device Package: PG-SOT23-6-1
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 42V
Part Status: Active
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.42 грн |
| 6000+ | 8.80 грн |
| 9000+ | 8.67 грн |
| 15000+ | 8.00 грн |
| 21000+ | 7.92 грн |
| 30000+ | 7.84 грн |
| ISZ065N03L5SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
Description: MOSFET N-CH 30V 12A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 12.51 грн |
| BSZ0909LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
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| ISZ0501NLSATMA1 |
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Виробник: Infineon Technologies
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
Description: 25V, N-CH MOSFET, LOGIC LEVEL, P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-25
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 12 V
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