Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148641) > Сторінка 397 з 2478
Фото | Назва | Виробник | Інформація |
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TLE4928CNE6947HAMA1 | Infineon Technologies |
![]() Packaging: Bulk Output Type: Open Drain Polarization: North Pole, South Pole Function: Bipolar Switch Technology: Hall Effect |
на замовлення 76500 шт: термін постачання 21-31 дні (днів) |
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TLE4922XINFHALA1 | Infineon Technologies |
![]() Packaging: Tape & Box (TB) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE4922XINFHALA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 1174 шт: термін постачання 21-31 дні (днів) |
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TLE4928HALA1 | Infineon Technologies | Description: MAGNETIC SWITCH SPEC PURP SSO-3 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLE4922XANFHALA1 | Infineon Technologies |
![]() Packaging: Tape & Box (TB) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLE4922XANFHALA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SIP, SSO-4-1 Output Type: Analog Voltage Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 155°C Voltage - Supply: 4.5V ~ 18V Bandwidth: 8kHz Technology: Hall Effect Sensing Range: ±400mT Current - Output (Max): 8mA Current - Supply (Max): 7mA Supplier Device Package: PG-SSO-4-1 Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1096 шт: термін постачання 21-31 дні (днів) |
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TLE4926CHTE6547HAMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPB80R290C3AATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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IPB80R290C3AATMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 8381 шт: термін постачання 21-31 дні (днів) |
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ICE3AR10080JZ | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -20°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DIP-7-1 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO Voltage - Start Up: 17 V Control Features: Soft Start Part Status: Active Power (Watts): 22 W |
на замовлення 6167 шт: термін постачання 21-31 дні (днів) |
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ICE3A2065 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 130°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V Supplier Device Package: PG-DIP-8 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Control Features: Soft Start Part Status: Active Power (Watts): 57 W |
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В кошику од. на суму грн. | ||||||||||||||||
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IRL530NSTRRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRL530NSTRRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPDD60R125CFD7XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPDD60R125CFD7XTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 340µA Supplier Device Package: PG-HDSOP-10-1 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V |
на замовлення 1688 шт: термін постачання 21-31 дні (днів) |
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BSS126IXTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSS126IXTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
на замовлення 2395 шт: термін постачання 21-31 дні (днів) |
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BSS126 H6906 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TDA4916GG | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
на замовлення 667 шт: термін постачання 21-31 дні (днів) |
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BTS5210G | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 110mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 40V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1356SV25-166AXC | Infineon Technologies |
Description: IC SRAM 9MBIT PARALLEL 100TQFP Packaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 166 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 512K x 18 DigiKey Programmable: Not Verified |
на замовлення 385 шт: термін постачання 21-31 дні (днів) |
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PX8897EDQGR2ER1232AXUMA1 | Infineon Technologies | Description: IC REGULATOR PG-VQFN-48-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
PX8897EDQGR2ER1233AXUMA1 | Infineon Technologies | Description: IC REGULATOR PG-VQFN-48-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ADM6992X-AD-T-1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 128-BFQFP Function: Switch Operating Temperature: 0°C ~ 115°C Voltage - Supply: 3.135V ~ 3.465V Protocol: Ethernet Standards: 10/100 Base-FX/T/TX PHY Supplier Device Package: PG-BFQFP-128 Part Status: Obsolete DigiKey Programmable: Not Verified |
на замовлення 384 шт: термін постачання 21-31 дні (днів) |
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ADM6992KX-AB-T-1-INF | Infineon Technologies |
![]() Packaging: Tray Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2486 шт: термін постачання 21-31 дні (днів) |
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IRFS7534TRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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IRFS7534TRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 294W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V |
на замовлення 2061 шт: термін постачання 21-31 дні (днів) |
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IRFS7534TRL7PP | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRFS7534TRL7PP | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SAF-XC836M-1FRIAB | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Connectivity: I2C, SSC, UART/USART Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-1 Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SAK-XC836MT-2FRAAB | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Connectivity: I²C, SSC, UART/USART Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-1 Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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6ED003L06FXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 13V ~ 17.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 620 V Supplier Device Package: PG-DSO-28-17 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 165mA, 375mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 17812 шт: термін постачання 21-31 дні (днів) |
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6ED003L06-FXUMA1 | Infineon Technologies |
Description: 6ED003L06 - HALF-BRIDGE BASED MO Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 13V ~ 17.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 620 V Supplier Device Package: PG-TSSOP-28 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 165mA, 375mA Part Status: Active DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||||||||||||||
111-4204PBF | Infineon Technologies | Description: IC REGULATOR SMD |
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В кошику од. на суму грн. | |||||||||||||||||
SIDC73D170E6X1SA2 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BBY 56-02W E6127 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C3 Supplier Device Package: SCD-80 Part Status: Discontinued at Digi-Key Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 3.3 |
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В кошику од. на суму грн. | ||||||||||||||||
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TLE7183QUXUMB1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5.5V ~ 20V Technology: Power MOSFET Supplier Device Package: PG-TQFP-48-8 Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive |
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В кошику од. на суму грн. | ||||||||||||||||
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TLE7183QUXUMA8 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5.5V ~ 20V Technology: Power MOSFET Supplier Device Package: PG-TQFP-48-8 Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE7183QUXUMA6 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5.5V ~ 20V Technology: Power MOSFET Supplier Device Package: PG-TQFP-48-8 Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE7183QUXUMA9 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5.5V ~ 20V Technology: Power MOSFET Supplier Device Package: PG-TQFP-48-8 Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE7183QUXUMA7 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 5.5V ~ 20V Technology: Power MOSFET Supplier Device Package: PG-TQFP-48-8 Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FF6MR12W2M1PB11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 20mW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 80mA Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
DF80R12W2H3B11BOMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Dual Boost Chopper Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 190 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V |
на замовлення 285 шт: термін постачання 21-31 дні (днів) |
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FS100R12KT4GPB11BPSA1 | Infineon Technologies |
Description: MOD IGBT LOW PWR ECONO3-4 Packaging: Bulk |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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DDB6U134N16RRB11BPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B Part Status: Active Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 400 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
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FF225R12ME4B11BPSA1 | Infineon Technologies |
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на замовлення 177 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
F4100R17ME4B11BPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 155 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
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FF225R17ME4PB11BPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V |
на замовлення 363 шт: термін постачання 21-31 дні (днів) |
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FP75R12KT4PB11BPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
на замовлення 39 шт: термін постачання 21-31 дні (днів) |
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F4250R17MP4B11BPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 21 nF @ 25 V |
на замовлення 462 шт: термін постачання 21-31 дні (днів) |
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TC364DP64F300WAAKXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 4MB (4M x 8) RAM Size: 672K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT Peripherals: DMA, I2S, PWM, WDT Supplier Device Package: PG-LQFP-144-22 Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC364DP64F300WAAKXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 4MB (4M x 8) RAM Size: 672K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT Peripherals: DMA, I2S, PWM, WDT Supplier Device Package: PG-LQFP-144-22 Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IMBG120R140M1HXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IMBG120R220M1HXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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CY7C1513KV18-250BZXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IKFW40N65ES5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/124ns Switching Energy: 560µJ (on), 320µJ (off) Test Condition: 400V, 30A, 13Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 106 W |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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IMM101T046MXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 38-PowerVQFN Mounting Type: Surface Mount Function: Driver Current - Output: 4A Interface: PWM Operating Temperature: -40°C ~ 115°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 16.5V Applications: General Purpose Technology: Power MOSFET Supplier Device Package: PG-IQFN-38-1 Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FS150R12KE3GBOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 695 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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IPP60R090CFD7 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPD380P06NMATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.7mA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V |
на замовлення 16688 шт: термін постачання 21-31 дні (днів) |
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TLE4928CNE6947HAMA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Packaging: Bulk
Output Type: Open Drain
Polarization: North Pole, South Pole
Function: Bipolar Switch
Technology: Hall Effect
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Packaging: Bulk
Output Type: Open Drain
Polarization: North Pole, South Pole
Function: Bipolar Switch
Technology: Hall Effect
на замовлення 76500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
91+ | 242.98 грн |
TLE4922XINFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
TLE4922XINFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1174 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 218.85 грн |
5+ | 179.17 грн |
10+ | 167.06 грн |
25+ | 142.86 грн |
50+ | 133.13 грн |
100+ | 124.07 грн |
500+ | 103.53 грн |
1000+ | 96.43 грн |
TLE4928HALA1 |
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPEC PURP SSO-3
Description: MAGNETIC SWITCH SPEC PURP SSO-3
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 553.88 грн |
5+ | 470.07 грн |
10+ | 415.28 грн |
25+ | 316.21 грн |
50+ | 279.46 грн |
100+ | 272.09 грн |
500+ | 251.59 грн |
TLE4922XANFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 75.34 грн |
TLE4922XANFHALA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR HALL ANALOG SSO4-1
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1096 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 198.16 грн |
10+ | 155.34 грн |
25+ | 126.02 грн |
50+ | 110.03 грн |
100+ | 104.53 грн |
500+ | 88.02 грн |
1000+ | 81.17 грн |
TLE4926CHTE6547HAMA1 |
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Виробник: Infineon Technologies
Description: SENSOR HALL EFFECT SSO-3
Description: SENSOR HALL EFFECT SSO-3
товару немає в наявності
В кошику
од. на суму грн.
IPB80R290C3AATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 197.18 грн |
IPB80R290C3AATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
на замовлення 8381 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 471.12 грн |
10+ | 313.81 грн |
100+ | 227.85 грн |
500+ | 178.55 грн |
ICE3AR10080JZ |
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Виробник: Infineon Technologies
Description: ICE3AR10080 - FIXED FREQUENCY CO
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
Description: ICE3AR10080 - FIXED FREQUENCY CO
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
на замовлення 6167 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
192+ | 115.07 грн |
ICE3A2065 |
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Виробник: Infineon Technologies
Description: ICE3A2065 - FIXED FREQUENCY COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 57 W
Description: ICE3A2065 - FIXED FREQUENCY COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 57 W
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IRL530NSTRRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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IRL530NSTRRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
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IPDD60R125CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
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IPDD60R125CFD7XTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
на замовлення 1688 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 320.71 грн |
10+ | 206.76 грн |
100+ | 149.65 грн |
500+ | 112.99 грн |
BSS126IXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
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BSS126IXTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
на замовлення 2395 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 24.67 грн |
21+ | 14.64 грн |
100+ | 6.99 грн |
500+ | 6.46 грн |
1000+ | 5.73 грн |
BSS126 H6906 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Description: SMALL SIGNAL N-CHANNEL MOSFET
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TDA4916GG |
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на замовлення 667 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
487+ | 45.51 грн |
BTS5210G |
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Виробник: Infineon Technologies
Description: BUFFER/INVERTER BASED PERIPHERAL
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: BUFFER/INVERTER BASED PERIPHERAL
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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CY7C1356SV25-166AXC |
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
на замовлення 385 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
25+ | 927.91 грн |
PX8897EDQGR2ER1232AXUMA1 |
Виробник: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Description: IC REGULATOR PG-VQFN-48-2
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PX8897EDQGR2ER1233AXUMA1 |
Виробник: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Description: IC REGULATOR PG-VQFN-48-2
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ADM6992X-AD-T-1 |
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Виробник: Infineon Technologies
Description: IC ETHERNET CONVERTER 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-FX/T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC ETHERNET CONVERTER 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-FX/T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 384 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
59+ | 367.41 грн |
ADM6992KX-AB-T-1-INF |
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Виробник: Infineon Technologies
Description: NINJA: FIBER TO FAST ETHERNET CO
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
Description: NINJA: FIBER TO FAST ETHERNET CO
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2486 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
55+ | 393.14 грн |
IRFS7534TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
800+ | 106.46 грн |
1600+ | 101.14 грн |
IRFS7534TRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
на замовлення 2061 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 299.22 грн |
10+ | 189.51 грн |
100+ | 133.31 грн |
IRFS7534TRL7PP |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
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IRFS7534TRL7PP |
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Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
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SAF-XC836M-1FRIAB |
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Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
189+ | 115.75 грн |
SAK-XC836MT-2FRAAB |
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Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
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6ED003L06FXUMA1 |
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Виробник: Infineon Technologies
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 17812 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
173+ | 131.85 грн |
6ED003L06-FXUMA1 |
Виробник: Infineon Technologies
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
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111-4204PBF |
Виробник: Infineon Technologies
Description: IC REGULATOR SMD
Description: IC REGULATOR SMD
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SIDC73D170E6X1SA2 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 100A WAFER
Description: DIODE GEN PURP 1.7KV 100A WAFER
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BBY 56-02W E6127 |
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Виробник: Infineon Technologies
Description: DIODE TUNING 10V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SCD-80
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
Description: DIODE TUNING 10V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SCD-80
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
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TLE7183QUXUMB1 |
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Виробник: Infineon Technologies
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
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TLE7183QUXUMA8 |
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Виробник: Infineon Technologies
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
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TLE7183QUXUMA6 |
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Виробник: Infineon Technologies
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
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TLE7183QUXUMA9 |
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Виробник: Infineon Technologies
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
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TLE7183QUXUMA7 |
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Виробник: Infineon Technologies
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
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FF6MR12W2M1PB11BPSA1 |
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Виробник: Infineon Technologies
Description: MOSFET MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Part Status: Obsolete
Description: MOSFET MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Part Status: Obsolete
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DF80R12W2H3B11BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
на замовлення 285 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 2880.43 грн |
FS100R12KT4GPB11BPSA1 |
на замовлення 38 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 11663.39 грн |
DDB6U134N16RRB11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 4823.56 грн |
FF225R12ME4B11BPSA1 |
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Виробник: Infineon Technologies
Description: FF225R12 - IGBT MODULE
Description: FF225R12 - IGBT MODULE
на замовлення 177 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
F4100R17ME4B11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 155A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MODULE 1700V 155A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
на замовлення 68 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 7217.73 грн |
FF225R17ME4PB11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 450A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Description: IGBT MOD 1700V 450A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
на замовлення 363 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 10339.16 грн |
FP75R12KT4PB11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 150A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: IGBT MOD 1200V 150A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 6968.71 грн |
F4250R17MP4B11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 370A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Description: IGBT MODULE 1700V 370A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
на замовлення 462 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 12409.06 грн |
TC364DP64F300WAAKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
DigiKey Programmable: Not Verified
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TC364DP64F300WAAKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
DigiKey Programmable: Not Verified
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IMBG120R140M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 18A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
Description: SICFET N-CH 1.2KV 18A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
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IMBG120R220M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
Description: SICFET N-CH 1.2KV 13A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 185.18 грн |
CY7C1513KV18-250BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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IKFW40N65ES5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
на замовлення 33 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 683.60 грн |
30+ | 385.70 грн |
IMM101T046MXUMA1 |
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Виробник: Infineon Technologies
Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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од. на суму грн.
FS150R12KE3GBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Description: IGBT MOD 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 23975.36 грн |
IPP60R090CFD7 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Part Status: Active
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IPD380P06NMATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 16688 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 135.29 грн |
10+ | 87.75 грн |
100+ | 61.69 грн |
500+ | 53.57 грн |