Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126524) > Сторінка 399 з 2109
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TLE73683EXUMA3 | Infineon Technologies |
Description: OPTIREG PMICSupplier Device Package: PG-DSO-36 Applications: Power Supply, Automotive Applications Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Input: 4.5V ~ 45V Number of Outputs: 3 Mounting Type: Surface Mount Voltage - Output: 5V, 3.3V/2.6V, 1.3V Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TLE73683EXUMA3 | Infineon Technologies |
Description: OPTIREG PMICSupplier Device Package: PG-DSO-36 Applications: Power Supply, Automotive Applications Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Input: 4.5V ~ 45V Number of Outputs: 3 Mounting Type: Surface Mount Packaging: Cut Tape (CT) Voltage - Output: 5V, 3.3V/2.6V, 1.3V Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad |
на замовлення 4962 шт: термін постачання 21-31 дні (днів) |
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| FZ1800R12KF4S1 | Infineon Technologies |
Description: IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 2700 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 10500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 110 nF @ 25 V |
на замовлення 77 шт: термін постачання 21-31 дні (днів) |
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| FZ1800R12KL4C | Infineon Technologies |
Description: IGBT MOD 1200V 2850A IHM190-2-1Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHM190-2-1 Part Status: Active Current - Collector (Ic) (Max): 2850 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 135 nF @ 25 V |
на замовлення 59 шт: термін постачання 21-31 дні (днів) |
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BSZ180P03NS3GATMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 9A/39.6A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 48µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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BSZ180P03NS3GATMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 9A/39.6A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 48µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V |
на замовлення 2139 шт: термін постачання 21-31 дні (днів) |
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| FZ1800R12HP4B9NPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 2700A AG-IHMB190Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Part Status: Active Current - Collector (Ic) (Max): 2700 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 10500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 110 nF @ 25 V |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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FZ1800R17HP4B9HOSA2 | Infineon Technologies |
Description: IGBT MOD 1700V 1800A 11500W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 145 nF @ 25 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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FZ1800R17HP4B29BOSA2 | Infineon Technologies |
Description: IGBT MOD 1700V 1800A AG-IHMB190Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 145 nF @ 25 V |
на замовлення 214 шт: термін постачання 21-31 дні (днів) |
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| FZ1800R17HP4_B29 | Infineon Technologies |
Description: FZ1800R17 - IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: AG-IHMB190 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1800 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 145 nF @ 25 V |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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| FZ1800R17KE3B2NOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 2850A 12.5W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 2850 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 12.5 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 160 nF @ 25 V |
на замовлення 232 шт: термін постачання 21-31 дні (днів) |
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| FZ1800R17KF4NOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 3560A 13500W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 3 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 3560 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 13500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 150 nF @ 25 V |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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| FZ1800R17HE4B9NPSA1 | Infineon Technologies |
Description: INSULATED GATE BIPOLAR TRANSISTO |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IR3595AMTRPBF | Infineon Technologies |
Description: IC REG CTLR BUCK PWM 56QFNPackaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 56-QFN (7x7) Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR3595AMTRPBF | Infineon Technologies |
Description: IC REG CTLR BUCK PWM 56QFNPackaging: Cut Tape (CT) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 56-QFN (7x7) Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N7002L6327HTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 300MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PG-SOT23-PO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BSZ042N04NSG | Infineon Technologies |
Description: MOSFET N-CH 40V 40A TO220AB |
на замовлення 47574 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 704 шт В кошику од. на суму грн. | ||||||||||||||
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ESD230B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 14VC WLL-2-1Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: WLL-2-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.05V Voltage - Clamping (Max) @ Ipp: 14V Power - Peak Pulse: 56W |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
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IPS514G | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 28SOICFeatures: Auto Restart Packaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 130mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 35V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 850mA Ratio - Input:Output: 1:1 Supplier Device Package: 28-SOIC Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IPS50R520CPBKMA1 | Infineon Technologies |
Description: LOW POWER_LEGACYPackaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PG-TO251-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPS50R520CPAKMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 7.1A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLE75620EMTXUMA1 | Infineon Technologies |
Description: IC PWR DRIVER N-CHAN 1:8 SSOP14 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEB3265HV1.5 | Infineon Technologies | Description: SLIC FILTER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PEB 3265 H V1.5 | Infineon Technologies |
Description: IC TELECOM INTERFACE MQFP-64Packaging: Tray Package / Case: 64-QFP Mounting Type: Surface Mount Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Interface: IOM-2, PCM Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.3V Current - Supply: 105mA Supplier Device Package: P-MQFP-64-1 Number of Circuits: 2 |
товару немає в наявності |
Мінімальне замовлення: 504 шт В кошику од. на суму грн. | ||||||||||||||
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TLD1313ELXUMA1 | Infineon Technologies |
Description: IC LED DRVR LINEAR 120MA 14SSOPPackaging: Cut Tape (CT) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 3 Type: Linear Operating Temperature: -40°C ~ 150°C (TJ) Current - Output / Channel: 120mA Internal Switch(s): Yes Supplier Device Package: PG-SSOP-14-5 Voltage - Supply (Min): 5.5V Voltage - Supply (Max): 40V Grade: Automotive Part Status: Active |
на замовлення 3772 шт: термін постачання 21-31 дні (днів) |
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TLD1313EL | Infineon Technologies |
Description: IC LED DRVR LINEAR 120MA 14SSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BGS22X11E6331XUMA1 | Infineon Technologies |
Description: DPDT DIFFERENTIAL RF SWITCH Packaging: Bulk |
на замовлення 392000 шт: термін постачання 21-31 дні (днів) |
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1EDB9275FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Supply: 10V ~ 56V Input Type: Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Channel Type: Single Driven Configuration: High-Side Number of Drivers: 2 Gate Type: IGBT, SiC MOSFET Current - Peak Output (Source, Sink): 4A, 8A DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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1EDB9275FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HIGH-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Supply: 10V ~ 56V Input Type: Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Channel Type: Single Driven Configuration: High-Side Number of Drivers: 2 Gate Type: IGBT, SiC MOSFET Current - Peak Output (Source, Sink): 4A, 8A DigiKey Programmable: Not Verified |
на замовлення 3766 шт: термін постачання 21-31 дні (днів) |
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REF10WTXQI4102TOBO1 | Infineon Technologies |
Description: DEV KITPackaging: Box For Use With/Related Products: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006 Frequency: 127.8kHz Type: Transmitter Contents: Board(s) Utilized IC / Part: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006 Supplied Contents: Board(s) Part Status: Active |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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BTS115ANKSA1 | Infineon Technologies |
Description: MOSFET N-CH 50V 15.5A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BTS129NKSA1 | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 2Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BB640E6327 | Infineon Technologies |
Description: BB640 - VARACTOR DIODE |
на замовлення 50667 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3963 шт В кошику од. на суму грн. | ||||||||||||||
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AIGB40N65F5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 40A TO263-3-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AIGB40N65H5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 40A TO263-3-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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IKZA40N65RH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 74A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/165ns Switching Energy: 140µJ (on), 120µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 60 A Power - Max: 250 W |
на замовлення 181 шт: термін постачання 21-31 дні (днів) |
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| FP75R17N3E4BPSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 125A 555W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 555 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V |
на замовлення 232 шт: термін постачання 21-31 дні (днів) |
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EVAL1ED3491MX12MTOBO1 | Infineon Technologies |
Description: 1ED3491MX12MTOBO1 DEV KITPackaging: Box Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 1ED3491MU12M, 1ED3491MC12M Supplied Contents: Board(s) Primary Attributes: 1-Channel (Single) Secondary Attributes: On-Board LEDs Embedded: Yes, MCU Part Status: Active |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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| IRGH4607DPBF | Infineon Technologies | Description: IGBT 600V 8PQFN |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IQE006NE2LM5CGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 41A/298A PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IQE006NE2LM5CGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 41A/298A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IQE006NE2LM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 41A/298A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IQE006NE2LM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 41A/298A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSON-8-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V |
на замовлення 5335 шт: термін постачання 21-31 дні (днів) |
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TLS4120D0EPV33XUMA1 | Infineon Technologies |
Description: IC REG BUCK 3.3V 2A TSDSO-14-5Packaging: Tape & Reel (TR) Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.8MHz Voltage - Input (Max): 35V Topology: Buck Supplier Device Package: PG-TSDSO-14-5 Synchronous Rectifier: Yes Voltage - Input (Min): 3.7V Voltage - Output (Min/Fixed): 3.3V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TLS4120D0EPV33XUMA1 | Infineon Technologies |
Description: IC REG BUCK 3.3V 2A TSDSO-14-5Packaging: Cut Tape (CT) Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.8MHz Voltage - Input (Max): 35V Topology: Buck Supplier Device Package: PG-TSDSO-14-5 Synchronous Rectifier: Yes Voltage - Input (Min): 3.7V Voltage - Output (Min/Fixed): 3.3V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 2139 шт: термін постачання 21-31 дні (днів) |
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TLS4125D0EPV33XUMA1 | Infineon Technologies |
Description: OPTIREG SWITCHER |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TLS4125D0EPV33XUMA1 | Infineon Technologies |
Description: OPTIREG SWITCHER |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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F3L75R07W2E3B11BOMA1 | Infineon Technologies |
Description: IGBT MODULE 650V 95A 250WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 250 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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FP35R12KT4BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 25A AG-ECONO2-8Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2-8 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 210 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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| BSF110N06NT3GXUMA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: DirectFET™ Isometric ST Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 33µA Supplier Device Package: MG-WDSON-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V |
на замовлення 8335 шт: термін постачання 21-31 дні (днів) |
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BBY57-02V | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODEPackaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: PG-SC79-2 Part Status: Active Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 4.5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DD1200S17H4_B2 | Infineon Technologies |
Description: DD1200S17 - RECTIFIER DIODE MODU |
на замовлення 82 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
| DD1200S12H4NPSA1 | Infineon Technologies |
Description: RECTIFIER DIODE MODULE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CG7815AAT | Infineon Technologies |
Description: MEMORY SRAM ASYNC Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CG7815AA | Infineon Technologies |
Description: MEMORY SRAM ASYNC Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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EVAL1ED44173N01BTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR 1ED44173N01BPackaging: Bulk Function: MOSFET Type: Interface Contents: Board(s) Utilized IC / Part: 1ED44173N01B Supplied Contents: Board(s) Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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CYW20733A2KML1GT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 56VFQFNPackaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V Power - Output: 10dBm Protocol: Bluetooth v3.0 Current - Receiving: 26.4mA Current - Transmitting: 47mA Supplier Device Package: 56-QFN (7x7) RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, SPI, UART Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE8457LINLDOBOARDTOBO1 | Infineon Technologies |
Description: TLE8457 LIN LDO BOARD |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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TT61N16KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 120A MODULEVoltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 120 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (AV)) (Max): 76 A Number of SCRs, Diodes: 2 SCRs Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz Current - Gate Trigger (Igt) (Max): 120 mA Current - Hold (Ih) (Max): 200 mA Structure: Series Connection - All SCRs Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C4014LQI-SLT2 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 24SQFNCore Size: 32-Bit Single-Core Data Converters: D/A 1x7b, 1x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 16KB (16K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Bulk DigiKey Programmable: Not Verified Number of I/O: 20 Supplier Device Package: 24-QFN (4x4) Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: I²C Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V |
на замовлення 726 шт: термін постачання 21-31 дні (днів) |
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| TLE73683EXUMA3 |
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Виробник: Infineon Technologies
Description: OPTIREG PMIC
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: OPTIREG PMIC
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 294.35 грн |
| TLE73683EXUMA3 |
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Виробник: Infineon Technologies
Description: OPTIREG PMIC
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Description: OPTIREG PMIC
Supplier Device Package: PG-DSO-36
Applications: Power Supply, Automotive Applications
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 4.5V ~ 45V
Number of Outputs: 3
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Voltage - Output: 5V, 3.3V/2.6V, 1.3V
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
на замовлення 4962 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 546.32 грн |
| 10+ | 407.28 грн |
| 25+ | 377.57 грн |
| 100+ | 323.79 грн |
| 250+ | 309.22 грн |
| 500+ | 300.44 грн |
| FZ1800R12KF4S1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
на замовлення 77 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 82806.10 грн |
| FZ1800R12KL4C |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 2850A IHM190-2-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHM190-2-1
Part Status: Active
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 135 nF @ 25 V
Description: IGBT MOD 1200V 2850A IHM190-2-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHM190-2-1
Part Status: Active
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 135 nF @ 25 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 93896.29 грн |
| BSZ180P03NS3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| BSZ180P03NS3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
Description: MOSFET P-CH 30V 9A/39.6A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39.6A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 48µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 15 V
на замовлення 2139 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 41.21 грн |
| 50+ | 30.31 грн |
| 100+ | 25.14 грн |
| 500+ | 19.32 грн |
| FZ1800R12HP4B9NPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 2700A AG-IHMB190
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Description: IGBT MOD 1200V 2700A AG-IHMB190
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench
Part Status: Active
Current - Collector (Ic) (Max): 2700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 62498.24 грн |
| FZ1800R17HP4B9HOSA2 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1800A 11500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
Description: IGBT MOD 1700V 1800A 11500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 74495.31 грн |
| FZ1800R17HP4B29BOSA2 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1800A AG-IHMB190
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
Description: IGBT MOD 1700V 1800A AG-IHMB190
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 214 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 82146.91 грн |
| FZ1800R17HP4_B29 |
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Виробник: Infineon Technologies
Description: FZ1800R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
Description: FZ1800R17 - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: AG-IHMB190
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 108066.88 грн |
| FZ1800R17KE3B2NOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 2850A 12.5W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 12.5 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
Description: IGBT MOD 1700V 2850A 12.5W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1.8kA
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 2850 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 12.5 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 110179.26 грн |
| FZ1800R17KF4NOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 3560A 13500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
Description: IGBT MOD 1200V 3560A 13500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2.4kA
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 130435.38 грн |
| FZ1800R17HE4B9NPSA1 |
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Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Description: INSULATED GATE BIPOLAR TRANSISTO
товару немає в наявності
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| IR3595AMTRPBF |
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Виробник: Infineon Technologies
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
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| IR3595AMTRPBF |
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Виробник: Infineon Technologies
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
Description: IC REG CTLR BUCK PWM 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 56-QFN (7x7)
Part Status: Not For New Designs
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| 2N7002L6327HTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BSZ042N04NSG |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A TO220AB
Description: MOSFET N-CH 40V 40A TO220AB
на замовлення 47574 шт:
термін постачання 21-31 дні (днів)
| ESD230B1W0201E6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
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| IPS514G |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 28SOIC
Features: Auto Restart
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 850mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Description: IC PWR SWITCH N-CHAN 1:1 28SOIC
Features: Auto Restart
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 850mA
Ratio - Input:Output: 1:1
Supplier Device Package: 28-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
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| IPS50R520CPBKMA1 |
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Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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| IPS50R520CPAKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 7.1A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Description: MOSFET N-CH 500V 7.1A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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| TLE75620EMTXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 SSOP14
Description: IC PWR DRIVER N-CHAN 1:8 SSOP14
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| PEB3265HV1.5 |
Виробник: Infineon Technologies
Description: SLIC FILTER
Description: SLIC FILTER
товару немає в наявності
В кошику
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| PEB 3265 H V1.5 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-64
Packaging: Tray
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: P-MQFP-64-1
Number of Circuits: 2
Description: IC TELECOM INTERFACE MQFP-64
Packaging: Tray
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: P-MQFP-64-1
Number of Circuits: 2
товару немає в наявності
Мінімальне замовлення: 504 шт
В кошику
од. на суму грн.
| TLD1313ELXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Description: IC LED DRVR LINEAR 120MA 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 120mA
Internal Switch(s): Yes
Supplier Device Package: PG-SSOP-14-5
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
на замовлення 3772 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.11 грн |
| 10+ | 50.04 грн |
| 25+ | 45.17 грн |
| 100+ | 37.36 грн |
| 250+ | 34.96 грн |
| 500+ | 33.51 грн |
| 1000+ | 32.08 грн |
| TLD1313EL |
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Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 120MA 14SSOP
Description: IC LED DRVR LINEAR 120MA 14SSOP
товару немає в наявності
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| BGS22X11E6331XUMA1 |
на замовлення 392000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 945+ | 21.50 грн |
| 1EDB9275FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 57.30 грн |
| 1EDB9275FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 10V ~ 56V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
на замовлення 3766 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.44 грн |
| 10+ | 80.91 грн |
| 25+ | 73.49 грн |
| 100+ | 61.33 грн |
| 250+ | 57.69 грн |
| 500+ | 55.50 грн |
| 1000+ | 54.23 грн |
| REF10WTXQI4102TOBO1 |
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Виробник: Infineon Technologies
Description: DEV KIT
Packaging: Box
For Use With/Related Products: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Frequency: 127.8kHz
Type: Transmitter
Contents: Board(s)
Utilized IC / Part: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Supplied Contents: Board(s)
Part Status: Active
Description: DEV KIT
Packaging: Box
For Use With/Related Products: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Frequency: 127.8kHz
Type: Transmitter
Contents: Board(s)
Utilized IC / Part: 1EDN7512B, BSS138WH, BSZ097N04LS, IFX20002MB V33, XMC6521SC-Q040X, WCDSC006
Supplied Contents: Board(s)
Part Status: Active
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21278.22 грн |
| BTS115ANKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
Description: MOSFET N-CH 50V 15.5A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 4.5V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 360.15 грн |
| BTS129NKSA1 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BB640E6327 |
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Виробник: Infineon Technologies
Description: BB640 - VARACTOR DIODE
Description: BB640 - VARACTOR DIODE
на замовлення 50667 шт:
термін постачання 21-31 дні (днів)
| AIGB40N65F5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
товару немає в наявності
В кошику
од. на суму грн.
| AIGB40N65H5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 384.85 грн |
| 10+ | 246.74 грн |
| IKZA40N65RH5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/165ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
Description: IGBT TRENCH FS 650V 74A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/165ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
на замовлення 181 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 501.64 грн |
| 30+ | 277.06 грн |
| 120+ | 231.77 грн |
| FP75R17N3E4BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 125A 555W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
Description: IGBT MOD 1700V 125A 555W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 12879.64 грн |
| EVAL1ED3491MX12MTOBO1 |
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Виробник: Infineon Technologies
Description: 1ED3491MX12MTOBO1 DEV KIT
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3491MU12M, 1ED3491MC12M
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
Description: 1ED3491MX12MTOBO1 DEV KIT
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3491MU12M, 1ED3491MC12M
Supplied Contents: Board(s)
Primary Attributes: 1-Channel (Single)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU
Part Status: Active
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5623.09 грн |
| IRGH4607DPBF |
Виробник: Infineon Technologies
Description: IGBT 600V 8PQFN
Description: IGBT 600V 8PQFN
товару немає в наявності
В кошику
од. на суму грн.
| IQE006NE2LM5CGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IQE006NE2LM5CGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Description: MOSFET N-CH 25V 41A/298A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| IQE006NE2LM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 73.27 грн |
| IQE006NE2LM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
Description: MOSFET N-CH 25V 41A/298A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
на замовлення 5335 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.90 грн |
| 10+ | 154.66 грн |
| 50+ | 119.03 грн |
| 100+ | 100.95 грн |
| 500+ | 82.08 грн |
| TLS4120D0EPV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLS4120D0EPV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC REG BUCK 3.3V 2A TSDSO-14-5
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.8MHz
Voltage - Input (Max): 35V
Topology: Buck
Supplier Device Package: PG-TSDSO-14-5
Synchronous Rectifier: Yes
Voltage - Input (Min): 3.7V
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 2139 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 290.80 грн |
| 10+ | 211.64 грн |
| 25+ | 194.58 грн |
| 100+ | 165.06 грн |
| 250+ | 156.69 грн |
| 500+ | 156.09 грн |
| TLS4125D0EPV33XUMA1 |
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Виробник: Infineon Technologies
Description: OPTIREG SWITCHER
Description: OPTIREG SWITCHER
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLS4125D0EPV33XUMA1 |
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Виробник: Infineon Technologies
Description: OPTIREG SWITCHER
Description: OPTIREG SWITCHER
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| F3L75R07W2E3B11BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 650V 95A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Description: IGBT MODULE 650V 95A 250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3448.78 грн |
| FP35R12KT4BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: IGBT MOD 1200V 25A AG-ECONO2-8
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-8
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4864.35 грн |
| BSF110N06NT3GXUMA1 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric ST
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 30 V
на замовлення 8335 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 443+ | 46.03 грн |
| BBY57-02V |
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Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.5
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од. на суму грн.
| DD1200S17H4_B2 |
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Виробник: Infineon Technologies
Description: DD1200S17 - RECTIFIER DIODE MODU
Description: DD1200S17 - RECTIFIER DIODE MODU
на замовлення 82 шт:
термін постачання 21-31 дні (днів)
| DD1200S12H4NPSA1 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE MODULE
Description: RECTIFIER DIODE MODULE
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од. на суму грн.
| CG7815AAT |
Виробник: Infineon Technologies
Description: MEMORY SRAM ASYNC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: MEMORY SRAM ASYNC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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од. на суму грн.
| CG7815AA |
Виробник: Infineon Technologies
Description: MEMORY SRAM ASYNC
Packaging: Tray
DigiKey Programmable: Not Verified
Description: MEMORY SRAM ASYNC
Packaging: Tray
DigiKey Programmable: Not Verified
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| EVAL1ED44173N01BTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED44173N01B
Packaging: Bulk
Function: MOSFET
Type: Interface
Contents: Board(s)
Utilized IC / Part: 1ED44173N01B
Supplied Contents: Board(s)
Part Status: Active
Description: EVAL BOARD FOR 1ED44173N01B
Packaging: Bulk
Function: MOSFET
Type: Interface
Contents: Board(s)
Utilized IC / Part: 1ED44173N01B
Supplied Contents: Board(s)
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1923.48 грн |
| CYW20733A2KML1GT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 56-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 56VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 56-QFN (7x7)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| TLE8457LINLDOBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: TLE8457 LIN LDO BOARD
Description: TLE8457 LIN LDO BOARD
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8571.01 грн |
| TT61N16KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 76 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SCR MODULE 1.6KV 120A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 76 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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| CY8C4014LQI-SLT2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 20
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I²C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Description: IC MCU 32BIT 16KB FLASH 24SQFN
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 20
Supplier Device Package: 24-QFN (4x4)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I²C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
на замовлення 726 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 188.90 грн |

































