Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123018) > Сторінка 474 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| PSB21483FV1.7 | Infineon Technologies |
Description: INCA-S CODEC WITH ACOUSTIC ECHO Packaging: Bulk |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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PSB21911NV5.2 | Infineon Technologies |
Description: IEC-Q TEISDN ECHO CANCELLATION Packaging: Bulk |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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PEB2091NV5.2 | Infineon Technologies |
Description: ISDN ECHO-CANCELLATION CIRCUIT-QPackaging: Bulk Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Function: ISDN Interface: IOM-2, PCM Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Supplier Device Package: 44-PLCC (16.6x16.6) Number of Circuits: 1 |
на замовлення 1315 шт: термін постачання 21-31 дні (днів) |
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| PEF2091NV5.2 | Infineon Technologies |
Description: ISDN ECHO CANCELLER, 1-FUNC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEB20902NV2.3GIEC-TA | Infineon Technologies | Description: ISDN ECHO-CANCELLATION CIRCUIT-T |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PEB2091NV5.3 | Infineon Technologies |
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IM73A135V01XTSA1 | Infineon Technologies |
Description: MIC MEMS ANALOG NC -38DBPackaging: Tape & Reel (TR) Output Type: Analog Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm) Sensitivity: -38dB Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 73dB Termination: Solder Pads Direction: Noise Cancelling Port Location: Top Height (Max): 0.039" (1.00mm) Part Status: Active Voltage - Rated: 2.75 V Current - Supply: 170 µA Voltage Range: 1.52 V ~ 3 V Frequency Range: 20 Hz ~ 20 kHz |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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IM73A135V01XTSA1 | Infineon Technologies |
Description: MIC MEMS ANALOG NC -38DBPackaging: Cut Tape (CT) Output Type: Analog Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm) Sensitivity: -38dB Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 73dB Termination: Solder Pads Direction: Noise Cancelling Port Location: Top Height (Max): 0.039" (1.00mm) Part Status: Active Voltage - Rated: 2.75 V Current - Supply: 170 µA Voltage Range: 1.52 V ~ 3 V Frequency Range: 20 Hz ~ 20 kHz |
на замовлення 1078 шт: термін постачання 21-31 дні (днів) |
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| FS75R12KT4BPSA2 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2B-411Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONO2B NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | |||||||||||||||
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FS75R12KT4BPSA1 | Infineon Technologies |
Description: GBT MODULE 1200V 75A Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Part Status: Discontinued at Digi-Key IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONO2-6 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FS75R12W2T4PBPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-411 Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 375 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 107 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-EASY2B NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Full Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 18 шт В кошику од. на суму грн. | |||||||||||||||
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FS75R12KT4B11BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2B-411Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONO2B NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. | ||||||||||||||
| FS75R12W2T4PB11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Tray Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 18 шт В кошику од. на суму грн. | |||||||||||||||
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IDK10G120C5XTMA1 | Infineon Technologies |
Description: DIODE SIC 1.2KV 31.9A PGTO26321Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 525pF @ 1V, 1MHz Current - Average Rectified (Io): 31.9A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 18 µA @ 1200 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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IDK10G120C5XTMA1 | Infineon Technologies |
Description: DIODE SIC 1.2KV 31.9A PGTO26321Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 525pF @ 1V, 1MHz Current - Average Rectified (Io): 31.9A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 18 µA @ 1200 V |
на замовлення 729 шт: термін постачання 21-31 дні (днів) |
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TLE4274DV33ATMA2 | Infineon Technologies |
Description: IC REG LIN 3.3V 400MA TO252-3-11Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 3.3V Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 1.2V @ 300mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE4274DV33ATMA2 | Infineon Technologies |
Description: IC REG LIN 3.3V 400MA TO252-3-11Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 3.3V Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 1.2V @ 300mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA Qualification: AEC-Q100 |
на замовлення 4008 шт: термін постачання 21-31 дні (днів) |
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TC277T64F200SDBLXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC277T64F200SDBKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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PTFA212401E V4 | Infineon Technologies |
Description: FET RF 65V 2.14GHZ H-36260-2Current - Test: 1.6 A Voltage - Test: 30 V Voltage - Rated: 65 V Part Status: Obsolete Supplier Device Package: H-36260-2 Technology: LDMOS Gain: 15.8dB Power - Output: 50W Frequency: 2.14GHz Mounting Type: Chassis Mount Current Rating (Amps): 10µA Package / Case: H-36260-2 Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PTFA212401E V4 R250 | Infineon Technologies |
Description: RF MOSFET LDMOS 30V H-36260-2Current - Test: 1.6 A Voltage - Test: 30 V Voltage - Rated: 65 V Supplier Device Package: H-36260-2 Technology: LDMOS Gain: 15.8dB Power - Output: 50W Frequency: 2.14GHz Mounting Type: Chassis Mount Current Rating (Amps): 10µA Package / Case: H-36260-2 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FF300R17ME4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 375A 1800W |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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KITIM72D128V01FLEXTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IM72D128V01Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Contents: Board(s) Utilized IC / Part: IM72D128V01 Supplied Contents: Board(s) Secondary Attributes: Digital Output Embedded: No Part Status: Active |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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ICE5BR3995BZXKLA1 | Infineon Technologies |
Description: COOLSET (INCL. GEN5) PG-DIP-7Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 950V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Part Status: Active Power (Watts): 30 W |
на замовлення 1930 шт: термін постачання 21-31 дні (днів) |
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ICE5BR4780BZXKLA1 | Infineon Technologies |
Description: COOLSET (INCL. GEN5) PG-DIP-7Packaging: Tape & Reel (TR) Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Part Status: Active Power (Watts): 27.5 W |
на замовлення 1916 шт: термін постачання 21-31 дні (днів) |
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ICE5BR4780BZXKLA1 | Infineon Technologies |
Description: COOLSET (INCL. GEN5) PG-DIP-7Packaging: Cut Tape (CT) Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Part Status: Active Power (Watts): 27.5 W |
на замовлення 1916 шт: термін постачання 21-31 дні (днів) |
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EVAL5BR4780BZ450MA1TOBO1 | Infineon Technologies |
Description: EVALUATION BOARD FOR ICE5BR4780BPackaging: Bulk Voltage - Output: 15V Voltage - Input: 85 ~ 264 VAC Current - Output: 450mA Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: ICE5BR4780BZ Supplied Contents: Board(s) Main Purpose: AC/DC Converter Outputs and Type: 1, Non-Isolated Part Status: Active Power - Output: 6.75 W |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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EVAL5BR3995BZBUCK1TOBO1 | Infineon Technologies |
Description: EVALUATION BOARD FOR ICE5BR3995Packaging: Bulk Voltage - Output: 18V Voltage - Input: 85 ~ 460 VAC Current - Output: 300mA Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: ICE5BR3995BZ Supplied Contents: Board(s) Main Purpose: AC/DC Converter Outputs and Type: 1, Non-Isolated Part Status: Active Power - Output: 5.4 W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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REF5BR3995BZ16W1TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICE5BR3995BZPackaging: Bulk Voltage - Output: 5V, 12V, 15V Voltage - Input: 85 ~ 264 VAC Current - Output: 900mA, 300mA, 150mA Contents: Board(s) Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5BR3995BZ Supplied Contents: Board(s) Main Purpose: AC/DC, Non-Isolated Outputs and Type: 3 Non-Isolated Outputs Part Status: Active Power - Output: 16W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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REF5BR3995CZ16W1TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICE5BR3995CZPackaging: Bulk Voltage - Output: 5V, 5V, 12V Voltage - Input: 85 ~ 460 VAC Current - Output: 1A, 200mA, 200mA Contents: Board(s) Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5BR3995CZ Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 3 Isolated Outputs Part Status: Active Power - Output: 16W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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REF5BR4780BZ15W1TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICE5BR4780BZPackaging: Bulk Voltage - Output: 5V, 12V, 15V Voltage - Input: 85 ~ 264 VAC Current - Output: 800mA, 300mA, 150mA Contents: Board(s) Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5BR4780BZ Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 3 Non-Isolated Outputs Part Status: Active Power - Output: 15W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IGO60R070D1AUMA1 | Infineon Technologies |
Description: GANFET N-CH 600V 31A 20DSOPackaging: Tape & Reel (TR) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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IGO60R070D1AUMA1 | Infineon Technologies |
Description: GANFET N-CH 600V 31A 20DSOPackaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
на замовлення 2153 шт: термін постачання 21-31 дні (днів) |
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IGOT60R070D1AUMA1 | Infineon Technologies |
Description: GANFET N-CH 600V 31A 20DSOPackaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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IGT60R070D1E8220ATMA1 | Infineon Technologies |
Description: GAN HVPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IGOT60R070D1E8220AUMA1 | Infineon Technologies |
Description: GAN HV Packaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IGO60R070D1E8220AUMA1 | Infineon Technologies |
Description: GAN HV Packaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FS800R07A2E3BOSA4 | Infineon Technologies |
Description: IGBT MOD ATV 800A HYBRID PACK2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 550A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 700 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 52 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS770R08A6P2LBBPSA1 | Infineon Technologies |
Description: IGBT MOD 750V 450A AG-HYBRIDD-1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: AG-HYBRIDD-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 654 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 80 nF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | ||||||||||||||
| FS05MR12A6MA1BBPSA1 | Infineon Technologies |
Description: HYBRID PACK DRIVE SIC AG-HYBRIDDPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A Supplier Device Package: AG-HYBRIDD-2 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS380R12A6T4LBBPSA1 | Infineon Technologies |
Description: HYBRID PACK DRIVE AG-HYBRIDD-1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 3 Independent NTC Thermistor: No Supplier Device Package: AG-HYBRIDD-2 Part Status: Active Current - Collector (Ic) (Max): 380 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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| RX98-3 | Infineon Technologies | Description: RF TRANSMITTER |
на замовлення 9245 шт: термін постачання 21-31 дні (днів) |
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DD170N36KHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 3600V 170A BGPB34ATPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 170A Supplier Device Package: BG-PB34AT-1 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 3600 V Voltage - Forward (Vf) (Max) @ If: 1.82 V @ 600 A Current - Reverse Leakage @ Vr: 25 mA @ 3600 V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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| BSM15GP60BOSA1 | Infineon Technologies |
Description: IGBT MODULE 600V 25A 100W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 100 W Current - Collector Cutoff (Max): 500 µA |
на замовлення 275 шт: термін постачання 21-31 дні (днів) |
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XC8664FRA5VBEAXUMA1 | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 38TSSOPPackaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 86MHz Program Memory Size: 16KB (16K x 8) RAM Size: 768 x 8 Operating Temperature: -40°C ~ 140°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V Connectivity: SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38 Number of I/O: 27 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TLE7241EXUMA1 | Infineon Technologies |
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 240mOhm Voltage - Load: 9V ~ 18V Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V Current - Output (Max): 1.2A Ratio - Input:Output: 1:2 Supplier Device Package: PG-DSO-20-27 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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REFWINLIFTTLE9855TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IPZ40N04S5-3R1 Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IPZ40N04S5-3R1, TLE4966G, TLE9855QX Supplied Contents: Board(s) Primary Attributes: Motors (BLDC) Embedded: Yes, MCU, 32-Bit Part Status: Active Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| TLE5046ICPWMR100HALA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR SSO-2 Packaging: Bulk Package / Case: 2-SIP, SSO-2-1 Output Type: PWM Mounting Type: Through Hole Axis: X, Y, Z Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: 250mT (X,Y), 500mT (Z) Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Obsolete |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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| TLE5046ICPWMR100HALA1 | Infineon Technologies |
Description: IC HALL SENSOR LINEAR SSO-2 Packaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-1 Output Type: PWM Mounting Type: Through Hole Axis: X, Y, Z Operating Temperature: -40°C ~ 190°C (TJ) Voltage - Supply: 5.2V ~ 20V Technology: Magnetoresistive Sensing Range: 250mT (X,Y), 500mT (Z) Current - Supply (Max): 16.1mA Supplier Device Package: PG-SSO-2-1 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPA60R280P7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 12A TO220Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4V @ 190µA Supplier Device Package: PG-TO220-FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V |
на замовлення 3701 шт: термін постачання 21-31 дні (днів) |
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IPD65R660CFD | Infineon Technologies |
Description: IPD65R660 - 650V AND 700V COOLMOFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 4.5V @ 200µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) |
на замовлення 827 шт: термін постачання 21-31 дні (днів) |
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| IPA65R600E6 | Infineon Technologies |
Description: IPA65R600 - 650V AND 700V COOLMOMounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3-111 Vgs(th) (Max) @ Id: 3.5V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IP165R660CFD | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IPL65R650C6SE8211ATMA1 | Infineon Technologies |
Description: IPL65R650 - 650V AND 700V COOLMOPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPD65R600E6BTMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 7.3A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 210µA Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| T571N65TS16XPSA1 | Infineon Technologies |
Description: HIGH POWER THYR / DIO BG-T7626K0 Packaging: Tray Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |||||||||||||||
| FZ1000R33HE3BOSA1 | Infineon Technologies |
Description: IGBT MODULE 3300V 1000A 1600WInput Capacitance (Cies) @ Vce: 190 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 1600 W Voltage - Collector Emitter Breakdown (Max): 3300 V Current - Collector (Ic) (Max): 1000 A Part Status: Active IGBT Type: Trench Field Stop NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A Operating Temperature: -40°C ~ 150°C Configuration: Single Switch Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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T1960N22TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2.2KV 4100A TO-200ADPackaging: Tray Package / Case: TO-200AD Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 1960 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 4100 A Voltage - Off State: 2.2 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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DD171N16KHPSA2 | Infineon Technologies |
Description: DIODE MODULE GEN PURP 1600V 171APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 171A Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A Current - Reverse Leakage @ Vr: 20 mA @ 1600 V |
на замовлення 55 шт: термін постачання 21-31 дні (днів) |
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IDB30E120ATMA1 | Infineon Technologies |
Description: DIODE STD 1200V 50A PGTO26332Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 243 ns Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 10679 шт: термін постачання 21-31 дні (днів) |
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| PSB21483FV1.7 |
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 2232.59 грн |
| PSB21911NV5.2 |
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 806.07 грн |
| PEB2091NV5.2 |
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Виробник: Infineon Technologies
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of Circuits: 1
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of Circuits: 1
на замовлення 1315 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 917.89 грн |
| PEB20902NV2.3GIEC-TA |
Виробник: Infineon Technologies
Description: ISDN ECHO-CANCELLATION CIRCUIT-T
Description: ISDN ECHO-CANCELLATION CIRCUIT-T
товару немає в наявності
В кошику
од. на суму грн.
| PEB2091NV5.3 |
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Виробник: Infineon Technologies
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
товару немає в наявності
В кошику
од. на суму грн.
| IM73A135V01XTSA1 |
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Виробник: Infineon Technologies
Description: MIC MEMS ANALOG NC -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
Description: MIC MEMS ANALOG NC -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IM73A135V01XTSA1 |
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Виробник: Infineon Technologies
Description: MIC MEMS ANALOG NC -38DB
Packaging: Cut Tape (CT)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
Description: MIC MEMS ANALOG NC -38DB
Packaging: Cut Tape (CT)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
на замовлення 1078 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 175.13 грн |
| 10+ | 132.45 грн |
| 25+ | 120.56 грн |
| 50+ | 105.46 грн |
| 100+ | 98.40 грн |
| 250+ | 89.88 грн |
| 500+ | 82.63 грн |
| FS75R12KT4BPSA2 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: LOW POWER ECONO AG-ECONO2B-411
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| FS75R12KT4BPSA1 |
Виробник: Infineon Technologies
Description: GBT MODULE 1200V 75A
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Discontinued at Digi-Key
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2-6
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: GBT MODULE 1200V 75A
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Discontinued at Digi-Key
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2-6
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| FS75R12W2T4PBPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-411
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 375 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: LOW POWER EASY AG-EASY2B-411
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 375 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 107 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-EASY2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 18 шт
В кошику
од. на суму грн.
| FS75R12KT4B11BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: LOW POWER ECONO AG-ECONO2B-411
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 15 шт
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| FS75R12W2T4PB11BPSA1 |
товару немає в наявності
Мінімальне замовлення: 18 шт
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| IDK10G120C5XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| IDK10G120C5XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
на замовлення 729 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 325.46 грн |
| 10+ | 207.45 грн |
| 100+ | 147.56 грн |
| 500+ | 130.31 грн |
| TLE4274DV33ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 50.68 грн |
| TLE4274DV33ATMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
на замовлення 4008 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.29 грн |
| 10+ | 72.01 грн |
| 25+ | 65.34 грн |
| 100+ | 54.43 грн |
| 250+ | 51.13 грн |
| 500+ | 49.15 грн |
| 1000+ | 47.82 грн |
| TC277T64F200SDBLXUMA2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
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| TC277T64F200SDBKXUMA2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| PTFA212401E V4 |
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Виробник: Infineon Technologies
Description: FET RF 65V 2.14GHZ H-36260-2
Current - Test: 1.6 A
Voltage - Test: 30 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: H-36260-2
Technology: LDMOS
Gain: 15.8dB
Power - Output: 50W
Frequency: 2.14GHz
Mounting Type: Chassis Mount
Current Rating (Amps): 10µA
Package / Case: H-36260-2
Packaging: Tray
Description: FET RF 65V 2.14GHZ H-36260-2
Current - Test: 1.6 A
Voltage - Test: 30 V
Voltage - Rated: 65 V
Part Status: Obsolete
Supplier Device Package: H-36260-2
Technology: LDMOS
Gain: 15.8dB
Power - Output: 50W
Frequency: 2.14GHz
Mounting Type: Chassis Mount
Current Rating (Amps): 10µA
Package / Case: H-36260-2
Packaging: Tray
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| PTFA212401E V4 R250 |
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Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-36260-2
Current - Test: 1.6 A
Voltage - Test: 30 V
Voltage - Rated: 65 V
Supplier Device Package: H-36260-2
Technology: LDMOS
Gain: 15.8dB
Power - Output: 50W
Frequency: 2.14GHz
Mounting Type: Chassis Mount
Current Rating (Amps): 10µA
Package / Case: H-36260-2
Packaging: Tape & Reel (TR)
Description: RF MOSFET LDMOS 30V H-36260-2
Current - Test: 1.6 A
Voltage - Test: 30 V
Voltage - Rated: 65 V
Supplier Device Package: H-36260-2
Technology: LDMOS
Gain: 15.8dB
Power - Output: 50W
Frequency: 2.14GHz
Mounting Type: Chassis Mount
Current Rating (Amps): 10µA
Package / Case: H-36260-2
Packaging: Tape & Reel (TR)
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В кошику
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| FF300R17ME4B11BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 375A 1800W
Description: IGBT MOD 1700V 375A 1800W
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 12175.74 грн |
| KITIM72D128V01FLEXTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IM72D128V01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM72D128V01
Supplied Contents: Board(s)
Secondary Attributes: Digital Output
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR IM72D128V01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM72D128V01
Supplied Contents: Board(s)
Secondary Attributes: Digital Output
Embedded: No
Part Status: Active
на замовлення 36 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5086.49 грн |
| 10+ | 4887.06 грн |
| ICE5BR3995BZXKLA1 |
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Виробник: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 30 W
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 30 W
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 155.76 грн |
| 10+ | 106.93 грн |
| 50+ | 89.68 грн |
| 100+ | 79.13 грн |
| 250+ | 73.84 грн |
| 500+ | 70.64 грн |
| 1000+ | 66.89 грн |
| ICE5BR4780BZXKLA1 |
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Виробник: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
на замовлення 1916 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 58.72 грн |
| 100+ | 53.48 грн |
| 150+ | 51.94 грн |
| 250+ | 47.14 грн |
| 350+ | 46.20 грн |
| 500+ | 45.30 грн |
| 1250+ | 42.65 грн |
| ICE5BR4780BZXKLA1 |
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Виробник: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
на замовлення 1916 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.54 грн |
| 10+ | 66.49 грн |
| 25+ | 60.29 грн |
| EVAL5BR4780BZ450MA1TOBO1 |
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Виробник: Infineon Technologies
Description: EVALUATION BOARD FOR ICE5BR4780B
Packaging: Bulk
Voltage - Output: 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 450mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 6.75 W
Description: EVALUATION BOARD FOR ICE5BR4780B
Packaging: Bulk
Voltage - Output: 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 450mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 6.75 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7869.19 грн |
| EVAL5BR3995BZBUCK1TOBO1 |
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Виробник: Infineon Technologies
Description: EVALUATION BOARD FOR ICE5BR3995
Packaging: Bulk
Voltage - Output: 18V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 300mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 5.4 W
Description: EVALUATION BOARD FOR ICE5BR3995
Packaging: Bulk
Voltage - Output: 18V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 300mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 5.4 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7980.77 грн |
| REF5BR3995BZ16W1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR3995BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 900mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 16W
Description: EVAL BOARD FOR ICE5BR3995BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 900mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 16W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8212.47 грн |
| REF5BR3995CZ16W1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR3995CZ
Packaging: Bulk
Voltage - Output: 5V, 5V, 12V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 1A, 200mA, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995CZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Isolated Outputs
Part Status: Active
Power - Output: 16W
Description: EVAL BOARD FOR ICE5BR3995CZ
Packaging: Bulk
Voltage - Output: 5V, 5V, 12V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 1A, 200mA, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995CZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Isolated Outputs
Part Status: Active
Power - Output: 16W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8212.47 грн |
| REF5BR4780BZ15W1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR4780BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 800mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 15W
Description: EVAL BOARD FOR ICE5BR4780BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 800mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 15W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7848.26 грн |
| IGO60R070D1AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
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| IGO60R070D1AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
на замовлення 2153 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 1281.50 грн |
| IGOT60R070D1AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 1211.14 грн |
| IGT60R070D1E8220ATMA1 |
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Виробник: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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| IGOT60R070D1E8220AUMA1 |
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IGO60R070D1E8220AUMA1 |
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| FS800R07A2E3BOSA4 |
Виробник: Infineon Technologies
Description: IGBT MOD ATV 800A HYBRID PACK2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 52 nF @ 25 V
Description: IGBT MOD ATV 800A HYBRID PACK2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 52 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FS770R08A6P2LBBPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 750V 450A AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
Description: IGBT MOD 750V 450A AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.
| FS05MR12A6MA1BBPSA1 |
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Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
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од. на суму грн.
| FS380R12A6T4LBBPSA1 |
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Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
NTC Thermistor: No
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: HYBRID PACK DRIVE AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
NTC Thermistor: No
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 47019.07 грн |
| RX98-3 |
Виробник: Infineon Technologies
Description: RF TRANSMITTER
Description: RF TRANSMITTER
на замовлення 9245 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 402+ | 53.13 грн |
| DD170N36KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MOD GP 3600V 170A BGPB34AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 170A
Supplier Device Package: BG-PB34AT-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.82 V @ 600 A
Current - Reverse Leakage @ Vr: 25 mA @ 3600 V
Description: DIODE MOD GP 3600V 170A BGPB34AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 170A
Supplier Device Package: BG-PB34AT-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.82 V @ 600 A
Current - Reverse Leakage @ Vr: 25 mA @ 3600 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13615.13 грн |
| 16+ | 11602.03 грн |
| BSM15GP60BOSA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 25A 100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Description: IGBT MODULE 600V 25A 100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
на замовлення 275 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 5555.31 грн |
| XC8664FRA5VBEAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 27
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| TLE7241EXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 240mOhm
Voltage - Load: 9V ~ 18V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-DSO-20-27
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR DRIVER N-CHAN 1:2 DSO-20
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 240mOhm
Voltage - Load: 9V ~ 18V
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.25V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-DSO-20-27
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| REFWINLIFTTLE9855TOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IPZ40N04S5-3R1
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IPZ40N04S5-3R1, TLE4966G, TLE9855QX
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR IPZ40N04S5-3R1
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IPZ40N04S5-3R1, TLE4966G, TLE9855QX
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21922.91 грн |
| TLE5046ICPWMR100HALA1 |
Виробник: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 197+ | 118.56 грн |
| TLE5046ICPWMR100HALA1 |
Виробник: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 190°C (TJ)
Voltage - Supply: 5.2V ~ 20V
Technology: Magnetoresistive
Sensing Range: 250mT (X,Y), 500mT (Z)
Current - Supply (Max): 16.1mA
Supplier Device Package: PG-SSO-2-1
Part Status: Obsolete
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| IPA60R280P7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
на замовлення 3701 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 270+ | 72.95 грн |
| IPD65R660CFD |
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Виробник: Infineon Technologies
Description: IPD65R660 - 650V AND 700V COOLMO
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Description: IPD65R660 - 650V AND 700V COOLMO
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
на замовлення 827 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 360+ | 60.88 грн |
| IPA65R600E6 |
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Виробник: Infineon Technologies
Description: IPA65R600 - 650V AND 700V COOLMO
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Description: IPA65R600 - 650V AND 700V COOLMO
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
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| IP165R660CFD |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
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| IPL65R650C6SE8211ATMA1 |
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Виробник: Infineon Technologies
Description: IPL65R650 - 650V AND 700V COOLMO
Packaging: Bulk
Part Status: Active
Description: IPL65R650 - 650V AND 700V COOLMO
Packaging: Bulk
Part Status: Active
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| IPD65R600E6BTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 650V 7.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 311+ | 64.44 грн |
| T571N65TS16XPSA1 |
Виробник: Infineon Technologies
Description: HIGH POWER THYR / DIO BG-T7626K0
Packaging: Tray
Part Status: Active
Description: HIGH POWER THYR / DIO BG-T7626K0
Packaging: Tray
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4 шт
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| FZ1000R33HE3BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 3300V 1000A 1600W
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1600 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Active
IGBT Type: Trench Field Stop
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MODULE 3300V 1000A 1600W
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 1600 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Active
IGBT Type: Trench Field Stop
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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| T1960N22TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1960 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 2.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 38808.93 грн |
| DD171N16KHPSA2 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GEN PURP 1600V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
Description: DIODE MODULE GEN PURP 1600V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 10739.45 грн |
| 16+ | 9168.60 грн |
| IDB30E120ATMA1 |
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Виробник: Infineon Technologies
Description: DIODE STD 1200V 50A PGTO26332
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 243 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE STD 1200V 50A PGTO26332
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 243 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 10679 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.63 грн |
| 10+ | 98.50 грн |
| 100+ | 66.85 грн |
| 500+ | 50.01 грн |



































