Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148448) > Сторінка 474 з 2475
Фото | Назва | Виробник | Інформація |
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BCR166E6393HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
на замовлення 190000 шт: термін постачання 21-31 дні (днів) |
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MB96F646RBPMC-GS-107JAE2 | Infineon Technologies | Description: IC MCU 16BIT 288KB FLASH 100LQFP |
товару немає в наявності |
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IRFH8321TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-TQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V Power Dissipation (Max): 3.4W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V |
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BTT3050EJXUMA1 | Infineon Technologies |
![]() Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 36V Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-8-31 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BTT3050EJXUMA1 | Infineon Technologies |
![]() Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 36V Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V Current - Output (Max): 4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-8-31 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit Part Status: Active |
на замовлення 4277 шт: термін постачання 21-31 дні (днів) |
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BTS129E3045ANTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 17A, 10V Power Dissipation (Max): 75W Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V |
на замовлення 2997 шт: термін постачання 21-31 дні (днів) |
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BSZ039N06NSATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 36µA Supplier Device Package: PG-TSDSON-8-34 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V |
на замовлення 1402 шт: термін постачання 21-31 дні (днів) |
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IRS2007MTRPBFXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 14-MLPQ (4x4) Rise / Fall Time (Typ): 70ns, 30ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
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IRS2007MTRPBFXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 14-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 14-MLPQ (4x4) Rise / Fall Time (Typ): 70ns, 30ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2650 шт: термін постачання 21-31 дні (днів) |
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CYW20730A1KMLGT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Sensitivity: -88dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.8V Power - Output: 4dBm Protocol: Bluetooth v3.0 Current - Receiving: 26.6mA Data Rate (Max): 1Mbps Current - Transmitting: 24mA Supplier Device Package: 40-QFN (6x6) GPIO: 14 RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
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IPP062NE7N3G | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE92464EDHPEVALBRD | Infineon Technologies |
![]() Packaging: Bulk Function: Solenoid Controller/Driver Type: Power Management Utilized IC / Part: TLE92464EDHP Supplied Contents: Board(s) Primary Attributes: 40V Supply Embedded: No Part Status: Active |
товару немає в наявності |
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EVALIKA15N65ET6TOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: IKA15N65ET6 Supplied Contents: Board(s) Primary Attributes: 165VAC ~ 265VAC Secondary Attributes: On-Board Test Points Embedded: No Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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TLF42772ELXUMA1 | Infineon Technologies |
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на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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IRF7353D2TRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRFR4620TRL | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AUIRFR4620TRL | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5640 шт: термін постачання 21-31 дні (днів) |
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ETD540N22P60TIMHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 542 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Active Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 2.2 kV |
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ESD3V3S1B-02LSE6327XTSA1 | Infineon Technologies |
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на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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V23809C8C10 | Infineon Technologies | Description: FAST ETHERNET TRANSCEICER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
V23809-C8-C10 | Infineon Technologies | Description: FAST ETHERNET TRANSCEICER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIDC07D60F6X1SA3 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLE9250VSJXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 100 mV Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLE9250VSJXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 100 mV Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
на замовлення 11803 шт: термін постачання 21-31 дні (днів) |
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IRFR2307ZTRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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IPT044N15N5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 221µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPT044N15N5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 221µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V |
на замовлення 2658 шт: термін постачання 21-31 дні (днів) |
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IPT054N15N5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 181µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPT054N15N5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 181µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V |
на замовлення 1468 шт: термін постачання 21-31 дні (днів) |
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AUXHMF7321D2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MB95F654ENPFT-G101SNERE2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 24-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 6x8/12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I²C, LINbus, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 24-TSSOP Number of I/O: 21 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||||||
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MB95F564KNPFT-G107SNERE2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 496 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 6x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: LINbus, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 20-TSSOP Number of I/O: 17 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISC007N04NM6ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.05mA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISC007N04NM6ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1.05mA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V |
на замовлення 4110 шт: термін постачання 21-31 дні (днів) |
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ISC017N04NM5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 60µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V |
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В кошику од. на суму грн. | ||||||||||||||
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ISC017N04NM5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 60µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V |
на замовлення 3870 шт: термін постачання 21-31 дні (днів) |
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BGS1711MC222IE6433XUSA1 | Infineon Technologies |
Description: IC RF SWITCH Packaging: Bulk Part Status: Active |
на замовлення 94000 шт: термін постачання 21-31 дні (днів) |
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DF23MR12W1M1B11BOMA1244 | Infineon Technologies |
![]() Packaging: Bulk |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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EVAL6EDL7141TRAP1SHTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Motor Controller/Driver, Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 6EDL7141 Supplied Contents: Board(s) Primary Attributes: Motors (BLDC) Secondary Attributes: SPI Interface(s) Embedded: Yes, MCU, 32-Bit |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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EVALIMD700AFOC3SHTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 6EDL7141, IMD701A, XMC1404 Supplied Contents: Board(s) Primary Attributes: 18V ~ 24V Embedded: Yes, MCU, 32-Bit Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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BGH 182M E6327 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TC1796256F150EXBEKDUMA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
ACCESSORY26649NOSA1 | Infineon Technologies | Description: ACCESSORY 26649 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CY7C1645KV18-400BZXI | Infineon Technologies |
![]() Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 400 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (15x17) Part Status: Active Memory Interface: Parallel Memory Organization: 4M x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPI60R250CP | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 520µA Supplier Device Package: PG-TO262 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V |
на замовлення 474 шт: термін постачання 21-31 дні (днів) |
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ILD4180 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Voltage - Output: 0.6V ~ 16V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 370kHz Type: DC DC Regulator Operating Temperature: -40°C ~ 125°C (TJ) Applications: Commercial & Industrial Lighting Current - Output / Channel: 1.8A Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: PG-DSO-8-27 Dimming: PWM Voltage - Supply (Min): 4.75V Voltage - Supply (Max): 45V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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LD403524VBOARDTOBO1 | Infineon Technologies |
![]() Features: Dimmable Packaging: Bulk Voltage - Input: 4.5V ~ 30V Current - Output / Channel: 350mA Utilized IC / Part: ILD4035 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TT820N16KOFHPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 24800A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 820 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.6 kV |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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SAK-TC277TP-64F200S BC | Infineon Technologies | Description: IC MICROCONTROLLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PEB2096HV2.1OCTAT-P | Infineon Technologies |
Description: IC TRANSCEIVER OCTAL Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PEB2096HV2.1 | Infineon Technologies | Description: OCTAT-P OCTAL TRANSCEICER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
IPB042N10NF2SATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLE7729TXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: SPI Serial Voltage - Supply: 3.3V, 5V Supplier Device Package: PG-TSSOP-28 Part Status: Obsolete Grade: Automotive |
на замовлення 19745 шт: термін постачання 21-31 дні (днів) |
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TDA5340XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Sensitivity: -116dBm Mounting Type: Surface Mount Frequency: 300MHz ~ 320MHz, 415MHz ~ 495MHz, 863MHz ~ 960MHz Type: TxRx Only Operating Temperature: -40°C ~ 110°C Voltage - Supply: 3V ~ 3.6V Power - Output: 14dBm Current - Receiving: 12mA Current - Transmitting: 12mA Supplier Device Package: PG-TSSOP-28 Modulation: ASK, FSK, GFSK RF Family/Standard: General ISM < 1GHz Serial Interfaces: SPI Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1302T028X0128ABXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Number of I/O: 26 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FS50R17KE3B17BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A NTC Thermistor: No Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 82 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 345 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PEF55016EV1.3-G | Infineon Technologies |
Description: GEMINAX-D16 PRO E V2.1 16 CHANNE Packaging: Bulk |
на замовлення 3960 шт: термін постачання 21-31 дні (днів) |
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DF23MR12W1M1B11BOMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: AG-EASY1BM-2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FF900R12IE4VPBOSA1 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
на замовлення 117 шт: термін постачання 21-31 дні (днів) |
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FF900R12ME7WB11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 890 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 122 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
BCR166E6393HTSA1 |
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на замовлення 190000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13172+ | 1.52 грн |
MB96F646RBPMC-GS-107JAE2 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 288KB FLASH 100LQFP
Description: IC MCU 16BIT 288KB FLASH 100LQFP
товару немає в наявності
В кошику
од. на суму грн.
IRFH8321TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N CH 30V 21A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.4W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
Description: MOSFET N CH 30V 21A PQFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.4W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
BTT3050EJXUMA1 |
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Виробник: Infineon Technologies
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 77.69 грн |
BTT3050EJXUMA1 |
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Виробник: Infineon Technologies
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Description: 50 M SINGLE CHANNEL SMART LOW-SI
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 36V
Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
на замовлення 4277 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 214.87 грн |
10+ | 145.45 грн |
100+ | 103.91 грн |
500+ | 76.81 грн |
1000+ | 71.59 грн |
BTS129E3045ANTMA1 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 17A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 17A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
на замовлення 2997 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
71+ | 323.73 грн |
BSZ039N06NSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 1402 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 120.96 грн |
10+ | 88.74 грн |
25+ | 80.07 грн |
100+ | 64.90 грн |
250+ | 59.36 грн |
500+ | 55.74 грн |
1000+ | 51.69 грн |
IRS2007MTRPBFXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
IRS2007MTRPBFXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2650 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 76.40 грн |
10+ | 52.95 грн |
25+ | 47.79 грн |
100+ | 39.53 грн |
250+ | 37.00 грн |
500+ | 35.47 грн |
1000+ | 33.66 грн |
CYW20730A1KMLGT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 40VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH 40VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 24mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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IPP062NE7N3G |
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Виробник: Infineon Technologies
Description: IPP062NE7 - 12V-300V N-CHANNEL P
Description: IPP062NE7 - 12V-300V N-CHANNEL P
товару немає в наявності
В кошику
од. на суму грн.
TLE92464EDHPEVALBRD |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE92464EDHP ARDU
Packaging: Bulk
Function: Solenoid Controller/Driver
Type: Power Management
Utilized IC / Part: TLE92464EDHP
Supplied Contents: Board(s)
Primary Attributes: 40V Supply
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR TLE92464EDHP ARDU
Packaging: Bulk
Function: Solenoid Controller/Driver
Type: Power Management
Utilized IC / Part: TLE92464EDHP
Supplied Contents: Board(s)
Primary Attributes: 40V Supply
Embedded: No
Part Status: Active
товару немає в наявності
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EVALIKA15N65ET6TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IKA15N65ET6
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKA15N65ET6
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR IKA15N65ET6
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IKA15N65ET6
Supplied Contents: Board(s)
Primary Attributes: 165VAC ~ 265VAC
Secondary Attributes: On-Board Test Points
Embedded: No
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 7397.85 грн |
TLF42772ELXUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 300MA 14SSOP
Description: IC REG LIN POS ADJ 300MA 14SSOP
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
IRF7353D2TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
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од. на суму грн.
AUIRFR4620TRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 151.86 грн |
AUIRFR4620TRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 200V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5640 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 328.67 грн |
10+ | 229.67 грн |
100+ | 169.86 грн |
500+ | 140.68 грн |
1000+ | 137.24 грн |
ETD540N22P60TIMHPSA1 |
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
товару немає в наявності
В кошику
од. на суму грн.
ESD3V3S1B-02LSE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Description: TRANS VOLTAGE SUPPRESSOR DIODE
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5624+ | 4.04 грн |
V23809C8C10 |
Виробник: Infineon Technologies
Description: FAST ETHERNET TRANSCEICER
Description: FAST ETHERNET TRANSCEICER
товару немає в наявності
В кошику
од. на суму грн.
V23809-C8-C10 |
Виробник: Infineon Technologies
Description: FAST ETHERNET TRANSCEICER
Description: FAST ETHERNET TRANSCEICER
товару немає в наявності
В кошику
од. на суму грн.
SIDC07D60F6X1SA3 |
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Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V WAFER
Description: DIODE SWITCHING 600V WAFER
товару немає в наявності
В кошику
од. на суму грн.
TLE9250VSJXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 58.79 грн |
5000+ | 55.35 грн |
7500+ | 54.71 грн |
TLE9250VSJXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
на замовлення 11803 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 118.58 грн |
10+ | 83.22 грн |
25+ | 75.56 грн |
100+ | 63.02 грн |
250+ | 59.25 грн |
500+ | 56.98 грн |
1000+ | 54.20 грн |
IRFR2307ZTRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 47.59 грн |
IPT044N15N5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 168.60 грн |
IPT044N15N5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 221µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 75 V
на замовлення 2658 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 400.29 грн |
10+ | 271.82 грн |
100+ | 216.83 грн |
500+ | 175.81 грн |
1000+ | 152.37 грн |
IPT054N15N5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
товару немає в наявності
В кошику
од. на суму грн.
IPT054N15N5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 181µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 75 V
на замовлення 1468 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 413.82 грн |
10+ | 266.15 грн |
100+ | 190.96 грн |
500+ | 149.13 грн |
1000+ | 146.84 грн |
AUXHMF7321D2 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 4.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Description: MOSFET P-CH 30V 4.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
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MB95F654ENPFT-G101SNERE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 20KB FLASH 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 24-TSSOP
Number of I/O: 21
DigiKey Programmable: Not Verified
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MB95F564KNPFT-G107SNERE2 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 20KB FLASH 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
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ISC007N04NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
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ISC007N04NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
на замовлення 4110 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 229.19 грн |
10+ | 153.80 грн |
100+ | 110.15 грн |
500+ | 81.27 грн |
1000+ | 73.50 грн |
ISC017N04NM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
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ISC017N04NM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Description: MOSFET N-CH 40V 193A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 60µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
на замовлення 3870 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 133.70 грн |
10+ | 87.44 грн |
100+ | 62.03 грн |
500+ | 47.61 грн |
1000+ | 44.14 грн |
2000+ | 42.70 грн |
BGS1711MC222IE6433XUSA1 |
на замовлення 94000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15000+ | 1.51 грн |
DF23MR12W1M1B11BOMA1244 |
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на замовлення 24 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 6626.31 грн |
EVAL6EDL7141TRAP1SHTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 6EDL7141
Packaging: Bulk
Function: Motor Controller/Driver, Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU, 32-Bit
Description: EVAL BOARD FOR 6EDL7141
Packaging: Bulk
Function: Motor Controller/Driver, Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU, 32-Bit
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 17483.94 грн |
EVALIMD700AFOC3SHTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IMD701A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141, IMD701A, XMC1404
Supplied Contents: Board(s)
Primary Attributes: 18V ~ 24V
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Description: EVAL BOARD FOR IMD701A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 6EDL7141, IMD701A, XMC1404
Supplied Contents: Board(s)
Primary Attributes: 18V ~ 24V
Embedded: Yes, MCU, 32-Bit
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 15880.38 грн |
BGH 182M E6327 |
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Виробник: Infineon Technologies
Description: FILTER LC ESD SMD
Description: FILTER LC ESD SMD
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TC1796256F150EXBEKDUMA1 |
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Виробник: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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ACCESSORY26649NOSA1 |
Виробник: Infineon Technologies
Description: ACCESSORY 26649
Description: ACCESSORY 26649
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CY7C1645KV18-400BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
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IPI60R250CP |
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Виробник: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
на замовлення 474 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
176+ | 122.23 грн |
ILD4180 |
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Виробник: Infineon Technologies
Description: SWITCHING REGULATOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Commercial & Industrial Lighting
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
Description: SWITCHING REGULATOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Voltage - Output: 0.6V ~ 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 370kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Commercial & Industrial Lighting
Current - Output / Channel: 1.8A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-27
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
416+ | 54.23 грн |
LD403524VBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: BOARD EVAL ILD4035 24V
Features: Dimmable
Packaging: Bulk
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Description: BOARD EVAL ILD4035 24V
Features: Dimmable
Packaging: Bulk
Voltage - Input: 4.5V ~ 30V
Current - Output / Channel: 350mA
Utilized IC / Part: ILD4035
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1387.10 грн |
TT820N16KOFHPSA1 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 24800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 820 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 24800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 820 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 26516.38 грн |
SAK-TC277TP-64F200S BC |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Description: IC MICROCONTROLLER
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PEB2096HV2.1 |
Виробник: Infineon Technologies
Description: OCTAT-P OCTAL TRANSCEICER
Description: OCTAT-P OCTAL TRANSCEICER
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IPB042N10NF2SATMA1 |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
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TLE7729TXUMA1 |
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Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.3V, 5V
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
Grade: Automotive
Description: IC INTERFACE SPECIALIZED 28TSSOP
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: SPI Serial
Voltage - Supply: 3.3V, 5V
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
Grade: Automotive
на замовлення 19745 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
115+ | 192.32 грн |
TDA5340XUMA1 |
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Виробник: Infineon Technologies
Description: IC RF TXRX ISM<1GHZ 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -116dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 415MHz ~ 495MHz, 863MHz ~ 960MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 14dBm
Current - Receiving: 12mA
Current - Transmitting: 12mA
Supplier Device Package: PG-TSSOP-28
Modulation: ASK, FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
Part Status: Obsolete
Description: IC RF TXRX ISM<1GHZ 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -116dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 415MHz ~ 495MHz, 863MHz ~ 960MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 14dBm
Current - Receiving: 12mA
Current - Transmitting: 12mA
Supplier Device Package: PG-TSSOP-28
Modulation: ASK, FSK, GFSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
Part Status: Obsolete
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XMC1302T028X0128ABXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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FS50R17KE3B17BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 345 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 82 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 345 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
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PEF55016EV1.3-G |
на замовлення 3960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 1650.11 грн |
DF23MR12W1M1B11BOMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: AG-EASY1BM-2
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: AG-EASY1BM-2
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FF900R12IE4VPBOSA1 |
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на замовлення 117 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 44371.96 грн |
FF900R12ME7WB11BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 890 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 890 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 122 nF @ 25 V
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