Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148751) > Сторінка 470 з 2480
| Фото | Назва | Виробник | Інформація |
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BSC0805LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 79A TDSON-8-6Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 49µA Supplier Device Package: PG-TDSON-8-6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
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TLE9250XSJXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGDSO8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 100 mV Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLE9250XSJXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGDSO8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 100 mV Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q100 |
на замовлення 12095 шт: термін постачання 21-31 дні (днів) |
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STT1400N16P55XPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz Number of SCRs, Diodes: 2 SCRs Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.6 kV |
товару немає в наявності |
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| S71VS064RB0AHT4L3 | Infineon Technologies |
Description: IC FLASH RAM 64MIT PAR 52VFRBGA Packaging: Tape & Reel (TR) Package / Case: 52-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit (FLASH), 64Mbit (RAM) Memory Type: Non-Volatile, Volatile Operating Temperature: -25°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH, PSRAM Clock Frequency: 108 MHz Memory Format: FLASH, RAM Supplier Device Package: 52-VFRBGA (6x5) Memory Interface: Parallel DigiKey Programmable: Not Verified |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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AIKQ200N75CP2XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 750V 200A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Supplier Device Package: TO-247-3 IGBT Type: Trench Td (on/off) @ 25°C: 89ns/266ns Switching Energy: 15.3mJ (on), 7mJ (off) Gate Charge: 1256 nC Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector Pulsed (Icm): 600 A Power - Max: 576 W |
на замовлення 225 шт: термін постачання 21-31 дні (днів) |
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TLS412533VBOARDTOBO1 | Infineon Technologies |
Description: TLS4125 3.3V BOARDPackaging: Bulk Voltage - Output: 3.3V Voltage - Input: 3.7V ~ 35V Current - Output: 2.5A Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TLS4125D0EPV33 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TLS412033VBOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS4120D0EPV33Packaging: Bulk Voltage - Output: 3.3V Voltage - Input: 3.7V ~ 35V Current - Output: 2A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TLS4120D0EPV33 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IRFS4410PBF-INF | Infineon Technologies |
Description: HEXFET POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V |
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SAF-XC836T-2FRIAB | Infineon Technologies |
Description: XC800 I-FAMILY MICROCONTROLLER ,Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Connectivity: I2C, SSC, UART/USART Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-1 Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
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| XC8362FRAABFXUMA1 | Infineon Technologies |
Description: IC MCU Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAT1504WH2110XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 100MW SOT3233Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Max: 110 mA Power Dissipation (Max): 100 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BAT1504WH2110XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 100MW SOT3233Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Max: 110 mA Power Dissipation (Max): 100 mW |
на замовлення 13177 шт: термін постачання 21-31 дні (днів) |
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| 6PS04012E4DG36022NOSA1 | Infineon Technologies |
Description: MODULE IGBTPackaging: Bulk Package / Case: Module Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 85°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A NTC Thermistor: No Part Status: Obsolete Current - Collector (Ic) (Max): 306 A Voltage - Collector Emitter Breakdown (Max): 3600 V |
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F3L75R12W1H3BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY1B-311 Packaging: Tray |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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| DF400R07PE4R_B6 | Infineon Technologies |
Description: IGBT MOD 650V 450A 1100WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: NPT Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1100 W Current - Collector Cutoff (Max): 20 nA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V |
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2PS06017E32G28213NOSA1 | Infineon Technologies |
Description: IGBT MODULE 1100VDC 325A |
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IMBG65R163M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.7mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V |
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IMBG65R163M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.7mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V |
на замовлення 718 шт: термін постачання 21-31 дні (днів) |
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IRFP4110PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V |
на замовлення 680 шт: термін постачання 21-31 дні (днів) |
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IRFP4468PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 290A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19860 pF @ 50 V |
на замовлення 612 шт: термін постачання 21-31 дні (днів) |
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IRFP4668PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V Power Dissipation (Max): 520W Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V |
на замовлення 337 шт: термін постачання 21-31 дні (днів) |
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IRFP4568PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V |
на замовлення 212 шт: термін постачання 21-31 дні (днів) |
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| TD61N12KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 120A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 60 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 120 A Voltage - Off State: 1.6 kV |
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TT240N34KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 3.4KV 700A MODULE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MB9BF429SAPMC-GK7E2 | Infineon Technologies | Description: IC MCU 32B 1.5625MB FLSH 144LQFP |
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В кошику од. на суму грн. | ||||||||||||||
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MB9BF429TBGL-GE1 | Infineon Technologies | Description: IC MCU 32B 1.5625MB FLSH 192FBGA |
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BSC205N10LS G | Infineon Technologies |
Description: MOSFET N-CH 100V 7.4A/45A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 45A, 10V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 43µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V |
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В кошику од. на суму грн. | ||||||||||||||
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BSC205N10LS G | Infineon Technologies |
Description: MOSFET N-CH 100V 7.4A/45A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 45A, 10V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 43µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V |
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В кошику од. на суму грн. | ||||||||||||||
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TC234L32F200FABKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 144TQFPPackaging: Cut Tape (CT) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 192K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Data Converters: A/D 24x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 3.3V Connectivity: CANbus, FlexRay, LINbus, QSPI Peripherals: DMA, WDT Supplier Device Package: PG-TQFP-144-27 Number of I/O: 120 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||||||
| XC161CJ16F20FBBFXUMA3 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 144TQFP Packaging: Bulk Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 12x8/10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: CANbus, EBI/EMI, I²C, SLDM, SPI, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-TQFP-144-7 Part Status: Last Time Buy Number of I/O: 99 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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F4100R12N2H3FB11BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2B-411 Packaging: Tray Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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F4150R12N3H3FB11BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO3B-411 Packaging: Tray Part Status: Active |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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F4200R12N3H3FB11BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO3B-411 Packaging: Tray |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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SAK-XE167KM-48F80L AA | Infineon Technologies |
Description: IC MCU 16BIT 384KB FLASH 144LQFPPackaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 384KB (384K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 119 DigiKey Programmable: Not Verified |
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SAF-XE167KM-48F80L AA | Infineon Technologies |
Description: IC MCU 16BIT 384KB FLASH 144LQFPPackaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 384KB (384K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 119 DigiKey Programmable: Not Verified |
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CY90F543PF-GE1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 100QFPPackaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 128KB (128K x 8) RAM Size: 6K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART Peripherals: POR, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 81 DigiKey Programmable: Not Verified |
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CY90F543GSPF-GS-BI24E1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 100QFPPackaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 128KB (128K x 8) RAM Size: 6K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART Peripherals: POR, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 81 DigiKey Programmable: Not Verified |
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CY90F543GSPMC-GSE1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 100LQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 128KB (128K x 8) RAM Size: 6K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART Peripherals: POR, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 81 DigiKey Programmable: Not Verified |
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| MB91F522FSEPMC-GSE1 | Infineon Technologies |
Description: IC MICROCONTROLLERPackaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 56K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 37x12b; D/A 2x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 76 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||||||||||||
| MB91F522FSDPMC-GSE1 | Infineon Technologies |
Description: IC MICROCONTROLLERPackaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 56K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: FR81S Data Converters: A/D 37x12b; D/A 2x8b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 76 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ETT480N22P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 2.2KV 700A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 135°C (TC) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 480 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 2.2 kV |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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| F445MR12W1M1B76BPSA1 | Infineon Technologies |
Description: MOSFET 4N-CH 1200V 25A AG-EASY1BPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 10mA Supplier Device Package: AG-EASY1B-2 |
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В кошику од. на суму грн. | |||||||||||||||
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IAUC24N10S5L300ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 24A TDSON-8-33Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 12µA Supplier Device Package: PG-TDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2139 шт: термін постачання 21-31 дні (днів) |
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CY8C3665AXI-198 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 100TQFP |
на замовлення 1480 шт: термін постачання 21-31 дні (днів) |
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| TT92N12KOFKHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.2KV 160A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C Structure: Common Cathode - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.2 kV |
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В кошику од. на суму грн. | |||||||||||||||
| TT92N08KOFKHPSA1 | Infineon Technologies |
Description: SCR MODULE 800V 160A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C Structure: Common Cathode - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 800 V |
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В кошику од. на суму грн. | |||||||||||||||
| TT92N12KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.2KV 160A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TT92N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 160A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.4 kV |
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В кошику од. на суму грн. | |||||||||||||||
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IPP037N06L3GHKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 93µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4929CXHAM38NHAMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSFeatures: Programmable, Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: 3-SSIP Module Output Type: Open Drain Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 4V ~ 16V Technology: Hall Effect Resolution: 16 b Sensing Range: ±120mT Current - Output (Max): 15mA Current - Supply (Max): 13.4mA Supplier Device Package: PG-SSO-3-53 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLE4929CXHAM38NHAMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSFeatures: Programmable, Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 3-SSIP Module Output Type: Open Drain Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 4V ~ 16V Technology: Hall Effect Resolution: 16 b Sensing Range: ±120mT Current - Output (Max): 15mA Current - Supply (Max): 13.4mA Supplier Device Package: PG-SSO-3-53 |
на замовлення 2986 шт: термін постачання 21-31 дні (днів) |
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CY8C20336A-24LQXI | Infineon Technologies |
Description: IC CAPSENSE PSOC 8K FLASH 24QFNPackaging: Bulk Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 24-QFN (4x4) Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 4637 шт: термін постачання 21-31 дні (днів) |
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BFN27E6327 | Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP35CN10N G | Infineon Technologies |
Description: MOSFET N-CH 100V 27A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 29µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP030N06NF2SAKMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc) Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 80µA Supplier Device Package: PG-TO220-3-U05 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V |
на замовлення 665 шт: термін постачання 21-31 дні (днів) |
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EVALPFC5KIKWWR6SYSTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR 1ED44175Packaging: Bulk Function: Power Factor Correction Type: Power Management Utilized IC / Part: 1ED44175, IDW60C65D1, IKWH40N65WR6 Supplied Contents: Board(s) Primary Attributes: 180 ~ 264 VAC Embedded: No Part Status: Active Contents: Board(s) |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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2ED4820EMXUMA2 | Infineon Technologies |
Description: IC GATE DRVRPackaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 20V ~ 70V Input Type: Non-Inverting Rise / Fall Time (Typ): 3µs, 3µs (Max) Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 2.6V Current - Peak Output (Source, Sink): 300mA, 1.3A Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2ED4820EMXUMA2 | Infineon Technologies |
Description: IC GATE DRVRPackaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 20V ~ 70V Input Type: Non-Inverting Rise / Fall Time (Typ): 3µs, 3µs (Max) Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 2.6V Current - Peak Output (Source, Sink): 300mA, 1.3A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2074 шт: термін постачання 21-31 дні (днів) |
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FF600R12ME4WB73BPSA1 | Infineon Technologies |
Description: MEDIUM POWER ECONOPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| BSC0805LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 79A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: MOSFET N-CH 100V 79A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
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| TLE9250XSJXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 58.86 грн |
| 5000+ | 55.42 грн |
| 7500+ | 54.79 грн |
| TLE9250XSJXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12095 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 118.08 грн |
| 10+ | 83.22 грн |
| 25+ | 75.54 грн |
| 100+ | 63.04 грн |
| 250+ | 59.28 грн |
| 500+ | 57.02 грн |
| 1000+ | 54.26 грн |
| STT1400N16P55XPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
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од. на суму грн.
| S71VS064RB0AHT4L3 |
Виробник: Infineon Technologies
Description: IC FLASH RAM 64MIT PAR 52VFRBGA
Packaging: Tape & Reel (TR)
Package / Case: 52-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, PSRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 52-VFRBGA (6x5)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 64MIT PAR 52VFRBGA
Packaging: Tape & Reel (TR)
Package / Case: 52-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, PSRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 52-VFRBGA (6x5)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 255.31 грн |
| AIKQ200N75CP2XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 750V 200A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 89ns/266ns
Switching Energy: 15.3mJ (on), 7mJ (off)
Gate Charge: 1256 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 576 W
Description: IGBT TRENCH 750V 200A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 89ns/266ns
Switching Energy: 15.3mJ (on), 7mJ (off)
Gate Charge: 1256 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 576 W
на замовлення 225 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1138.03 грн |
| 30+ | 671.81 грн |
| 120+ | 578.98 грн |
| TLS412533VBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: TLS4125 3.3V BOARD
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125D0EPV33
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: TLS4125 3.3V BOARD
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125D0EPV33
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4226.97 грн |
| TLS412033VBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV33
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV33
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4157.66 грн |
| IRFS4410PBF-INF |
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Виробник: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
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од. на суму грн.
| SAF-XC836T-2FRIAB |
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Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
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од. на суму грн.
| BAT1504WH2110XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.28 грн |
| 6000+ | 15.25 грн |
| BAT1504WH2110XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 13177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.79 грн |
| 14+ | 25.05 грн |
| 25+ | 22.38 грн |
| 100+ | 18.26 грн |
| 250+ | 16.95 грн |
| 500+ | 16.16 грн |
| 1000+ | 15.26 грн |
| 6PS04012E4DG36022NOSA1 |
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Виробник: Infineon Technologies
Description: MODULE IGBT
Packaging: Bulk
Package / Case: Module
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 85°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 306 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Description: MODULE IGBT
Packaging: Bulk
Package / Case: Module
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 85°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 306 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
товару немає в наявності
В кошику
од. на суму грн.
| F3L75R12W1H3BPSA1 |
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5403.50 грн |
| 24+ | 3952.35 грн |
| DF400R07PE4R_B6 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 450A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 20 nA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Description: IGBT MOD 650V 450A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 20 nA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
товару немає в наявності
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од. на суму грн.
| 2PS06017E32G28213NOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1100VDC 325A
Description: IGBT MODULE 1100VDC 325A
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| IMBG65R163M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
товару немає в наявності
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од. на суму грн.
| IMBG65R163M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
на замовлення 718 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 436.39 грн |
| 10+ | 280.07 грн |
| 100+ | 200.78 грн |
| 500+ | 156.69 грн |
| IRFP4110PBFXKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
на замовлення 680 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 290.07 грн |
| 25+ | 158.24 грн |
| 100+ | 129.30 грн |
| 500+ | 99.58 грн |
| IRFP4468PBFXKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19860 pF @ 50 V
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19860 pF @ 50 V
на замовлення 612 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 409.01 грн |
| 25+ | 228.77 грн |
| 100+ | 189.41 грн |
| 500+ | 148.19 грн |
| IRFP4668PBFXKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
Power Dissipation (Max): 520W
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
Power Dissipation (Max): 520W
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
на замовлення 337 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 382.48 грн |
| 25+ | 212.98 грн |
| 100+ | 175.84 грн |
| IRFP4568PBFXKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
на замовлення 212 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 437.24 грн |
| 25+ | 245.64 грн |
| 100+ | 203.86 грн |
| TD61N12KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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| TT240N34KOFHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 3.4KV 700A MODULE
Description: SCR MODULE 3.4KV 700A MODULE
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| MB9BF429SAPMC-GK7E2 |
Виробник: Infineon Technologies
Description: IC MCU 32B 1.5625MB FLSH 144LQFP
Description: IC MCU 32B 1.5625MB FLSH 144LQFP
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| MB9BF429TBGL-GE1 |
Виробник: Infineon Technologies
Description: IC MCU 32B 1.5625MB FLSH 192FBGA
Description: IC MCU 32B 1.5625MB FLSH 192FBGA
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| BSC205N10LS G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 7.4A/45A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 45A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
Description: MOSFET N-CH 100V 7.4A/45A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 45A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
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| BSC205N10LS G |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 7.4A/45A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 45A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
Description: MOSFET N-CH 100V 7.4A/45A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 45A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 43µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 50 V
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| TC234L32F200FABKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Number of I/O: 120
DigiKey Programmable: Not Verified
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| XC161CJ16F20FBBFXUMA3 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 144TQFP
Packaging: Bulk
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I²C, SLDM, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Last Time Buy
Number of I/O: 99
Description: IC MCU 16BIT 128KB FLASH 144TQFP
Packaging: Bulk
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 12x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, I²C, SLDM, SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Last Time Buy
Number of I/O: 99
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| F4100R12N2H3FB11BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Part Status: Active
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9473.89 грн |
| F4150R12N3H3FB11BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Part Status: Active
Description: LOW POWER ECONO AG-ECONO3B-411
Packaging: Tray
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 31225.66 грн |
| F4200R12N3H3FB11BPSA1 |
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8670.42 грн |
| 10+ | 7028.39 грн |
| SAK-XE167KM-48F80L AA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
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| SAF-XE167KM-48F80L AA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
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| CY90F543PF-GE1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
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| CY90F543GSPF-GS-BI24E1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
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| CY90F543GSPMC-GSE1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
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| MB91F522FSEPMC-GSE1 |
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Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: IC MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
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| MB91F522FSDPMC-GSE1 |
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Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: IC MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
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| ETT480N22P60HPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 12536.30 грн |
| F445MR12W1M1B76BPSA1 |
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Виробник: Infineon Technologies
Description: MOSFET 4N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Description: MOSFET 4N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
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| IAUC24N10S5L300ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2139 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.82 грн |
| 10+ | 61.80 грн |
| 100+ | 40.91 грн |
| 500+ | 29.99 грн |
| 1000+ | 27.28 грн |
| 2000+ | 25.61 грн |
| CY8C3665AXI-198 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Description: IC MCU 8BIT 32KB FLASH 100TQFP
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 47+ | 523.28 грн |
| TT92N12KOFKHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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| TT92N08KOFKHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 800V 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 800 V
Description: SCR MODULE 800V 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 800 V
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| TT92N12KOFHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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| TT92N14KOFHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
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| IPP037N06L3GHKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
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| TLE4929CXHAM38NHAMA1 |
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Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
Description: SPEED & CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 126.25 грн |
| TLE4929CXHAM38NHAMA1 |
![]() |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
Description: SPEED & CURRENT SENSORS
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
на замовлення 2986 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.16 грн |
| 5+ | 203.03 грн |
| 10+ | 193.88 грн |
| 25+ | 171.70 грн |
| 50+ | 164.69 грн |
| 100+ | 158.30 грн |
| 500+ | 143.03 грн |
| CY8C20336A-24LQXI |
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Виробник: Infineon Technologies
Description: IC CAPSENSE PSOC 8K FLASH 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC CAPSENSE PSOC 8K FLASH 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 4637 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 236.95 грн |
| BFN27E6327 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
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| IPP35CN10N G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 27A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Description: MOSFET N-CH 100V 27A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
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| IPP030N06NF2SAKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 80µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 80µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
на замовлення 665 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.03 грн |
| 50+ | 68.55 грн |
| 100+ | 61.39 грн |
| 500+ | 45.81 грн |
| EVALPFC5KIKWWR6SYSTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED44175
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: 1ED44175, IDW60C65D1, IKWH40N65WR6
Supplied Contents: Board(s)
Primary Attributes: 180 ~ 264 VAC
Embedded: No
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR 1ED44175
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: 1ED44175, IDW60C65D1, IKWH40N65WR6
Supplied Contents: Board(s)
Primary Attributes: 180 ~ 264 VAC
Embedded: No
Part Status: Active
Contents: Board(s)
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 19607.49 грн |
| 2ED4820EMXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 20V ~ 70V
Input Type: Non-Inverting
Rise / Fall Time (Typ): 3µs, 3µs (Max)
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 2.6V
Current - Peak Output (Source, Sink): 300mA, 1.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 20V ~ 70V
Input Type: Non-Inverting
Rise / Fall Time (Typ): 3µs, 3µs (Max)
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 2.6V
Current - Peak Output (Source, Sink): 300mA, 1.3A
Part Status: Active
DigiKey Programmable: Not Verified
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| 2ED4820EMXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 20V ~ 70V
Input Type: Non-Inverting
Rise / Fall Time (Typ): 3µs, 3µs (Max)
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 2.6V
Current - Peak Output (Source, Sink): 300mA, 1.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 20V ~ 70V
Input Type: Non-Inverting
Rise / Fall Time (Typ): 3µs, 3µs (Max)
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 2.6V
Current - Peak Output (Source, Sink): 300mA, 1.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2074 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 575.00 грн |
| 10+ | 374.49 грн |
| 100+ | 273.15 грн |
| 500+ | 222.51 грн |
| FF600R12ME4WB73BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 17000.29 грн |




































