Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148446) > Сторінка 471 з 2475
Фото | Назва | Виробник | Інформація |
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C161SL25MAABXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 63 DigiKey Programmable: Not Verified |
на замовлення 5849 шт: термін постачання 21-31 дні (днів) |
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C164CI8E25MDBFXQMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: OTP Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
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SAB-C164CI-LM CA+ | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 4K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
товару немає в наявності |
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C164CILMCAKNUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||||||||||||||
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C164CI8E25MDBKXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: OTP Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FF900R17ME7B11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A NTC Thermistor: Yes IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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FF225R17ME7B11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 225A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 225 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 22.9 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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FS25R12KE3GBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 145 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FD900R12IP4DVBOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
на замовлення 112 шт: термін постачання 21-31 дні (днів) |
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IMD700AQ064X128AAXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: CAN, I2C, SPI, UART/USART RAM Size: 16K x 8 Operating Temperature: -40°C ~ 115°C (TJ) Voltage - Supply: 5.5V ~ 60V Controller Series: XMC1404 Program Memory Type: FLASH (128kB) Applications: BLDC Controller Input Type: Non-Inverting Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-64-8 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 3 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.045V, 3.85V Current - Peak Output (Source, Sink): 1.5A, 1.5A Part Status: Active Number of I/O: 20 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IMD700AQ064X128AAXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 64-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: CAN, I2C, SPI, UART/USART RAM Size: 16K x 8 Operating Temperature: -40°C ~ 115°C (TJ) Voltage - Supply: 5.5V ~ 60V Controller Series: XMC1404 Program Memory Type: FLASH (128kB) Applications: BLDC Controller Input Type: Non-Inverting Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-64-8 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 3 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.045V, 3.85V Current - Peak Output (Source, Sink): 1.5A, 1.5A Part Status: Active Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 1892 шт: термін постачання 21-31 дні (днів) |
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IPA65R280C6 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO220-3-111 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BSB012N03LX3 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
на замовлення 3581 шт: термін постачання 21-31 дні (днів) |
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FP50R12N2T7BPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 10 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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BYM300B170DN2HOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 20 mW Current - Collector Cutoff (Max): 40 µA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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BAT 54-02V E6327 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
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В кошику од. на суму грн. | ||||||||||||||||
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IGLD60R190D1SAUMA1 | Infineon Technologies |
Description: GAN HV PG-LSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-LDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 960µA Supplier Device Package: PG-LSON-8-1 Part Status: Active Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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F475R12KS4B11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2C Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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F475R12KS4BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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EVALM10565DTOBO2 | Infineon Technologies |
![]() Packaging: Box Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: IRMCK099 Supplied Contents: Board(s) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BSM300GB120DLCE3256HOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 625 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 21 nF @ 25 V |
на замовлення 378 шт: термін постачання 21-31 дні (днів) |
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SPB80N10L G | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 2mA Supplier Device Package: PG-TO263-3-2 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IAUA180N10S5N029AUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tj) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 130µA Supplier Device Package: PG-HSOF-5-4 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BB 804 SF3 E6327 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: 1 Pair Common Cathode Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz Q @ Vr, F: 200 @ 2V, 100MHz Capacitance Ratio Condition: C2/C8 Supplier Device Package: PG-SOT23 Part Status: Obsolete Voltage - Peak Reverse (Max): 18 V Capacitance Ratio: 1.71 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGSA143ML10E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: DC Blocked Package / Case: 10-XFLGA Mounting Type: Surface Mount Circuit: SP4T Voltage - Supply: 42V Frequency Range: 6GHz Topology: Reflective Supplier Device Package: PG-TSLP-10-2 Part Status: Active |
на замовлення 7063 шт: термін постачання 21-31 дні (днів) |
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IPB180N06S4H1ATMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO263-7 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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IAUS300N04S4N007ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 275µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICBFL02G | Infineon Technologies |
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на замовлення 699 шт: термін постачання 21-31 дні (днів) |
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2ED2103S06FXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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2ED2103S06FXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5551 шт: термін постачання 21-31 дні (днів) |
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IRFU024NPBFAKLA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK (TO-251AA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP60R600E6XKSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
TTB6C135N16LOF | Infineon Technologies |
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на замовлення 109 шт: термін постачання 21-31 дні (днів) |
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ICE5QR0680AGXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Not For New Designs Power (Watts): 77 W |
на замовлення 1033 шт: термін постачання 21-31 дні (днів) |
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BSC080N12LSGATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 112µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC080N12LSGATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 112µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
BSB165N15NZ3G | Infineon Technologies |
![]() Packaging: Bulk Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: MG-WDSON-2-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V |
на замовлення 4012 шт: термін постачання 21-31 дні (днів) |
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BAL99 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOT23-3 (TO-236) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 70 V |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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BAL99E6433HTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: PG-SOT23 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 70 V |
на замовлення 36786 шт: термін постачання 21-31 дні (днів) |
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TT700N22KOFTIMHPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 700 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Part Status: Active Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 2.2 kV |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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TD700N22KOFTIMHPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 700 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 2.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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F3L50R06W1E3B11BOMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EVALISO1I813TTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Digital Isolator Type: Interface Utilized IC / Part: ISO1I813T Supplied Contents: Board(s) Primary Attributes: 8-Channel (Octal) Embedded: No Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IPW65R230CFD7AXKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: PG-TO247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V Qualification: AEC-Q101 |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TDA5225CXUMA1 | Infineon Technologies |
![]() Features: RSSI Equipped Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Sensitivity: -120dBm Mounting Type: Surface Mount Frequency: 300MHz ~ 320MHz, 425MHz ~ 450MHz, 863MHz ~ 870MHz, 902MHz ~ 928MHz Modulation or Protocol: ASK, FSK Data Interface: SPI Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Applications: Alarm Systems, Communication Systems, RKE Current - Receiving: 15mA Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-28 Part Status: Obsolete |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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CHL8212-02CRT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: 0°C ~ 85°C Output Configuration: Positive Frequency - Switching: 200kHz ~ 1.2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-28-902 Synchronous Rectifier: No Control Features: Enable Serial Interfaces: I²C Output Phases: 2 Clock Sync: No Part Status: Obsolete Number of Outputs: 3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TR10124595NOSA1 | Infineon Technologies | Description: TR101 W24595 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TR10128001NOSA1 | Infineon Technologies |
Description: MODULE GATE DRIVER Packaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
TR10140962NOSA1 | Infineon Technologies |
Description: POWER MODULE IGBT Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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REFICL8810LED42WPSRTOBO1 | Infineon Technologies |
![]() Features: Dimmable Packaging: Bulk Voltage - Output: 52V Voltage - Input: 90 ~ 305 VAC Contents: Board(s) Utilized IC / Part: ICL8810 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ICL8201 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 40kHz ~ 150kHz Type: AC DC Offline Switcher Operating Temperature: -25°C ~ 150°C (TJ) Applications: Lighting Current - Output / Channel: 800mA Internal Switch(s): Yes Topology: Step-Down (Buck) Supplier Device Package: PG-SOT23-6-1 Dimming: Yes Voltage - Supply (Min): 6V Voltage - Supply (Max): 18V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICL8105XUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 85°C (TA) Applications: Lighting Internal Switch(s): No Topology: Flyback Supplier Device Package: PG-DSO-8 Dimming: Analog, PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 24V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICL8105XUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 85°C (TA) Applications: Lighting Internal Switch(s): No Topology: Flyback Supplier Device Package: PG-DSO-8 Dimming: Analog, PWM Voltage - Supply (Min): 6V Voltage - Supply (Max): 24V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGA9H1BN6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 2.3GHz ~ 2.7GHz RF Type: 4G, 5G Voltage - Supply: 1.1V ~ 3.3V Gain: 21.8dB Current - Supply: 5.5mA Noise Figure: 0.6dB P1dB: 5dBm Test Frequency: 2.6GHz Supplier Device Package: PG-TSNP-6-10 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGA9H1BN6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 2.3GHz ~ 2.7GHz RF Type: 4G, 5G Voltage - Supply: 1.1V ~ 3.3V Gain: 21.8dB Current - Supply: 5.5mA Noise Figure: 0.6dB P1dB: 5dBm Test Frequency: 2.6GHz Supplier Device Package: PG-TSNP-6-10 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGA9H1BN6E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 2.3GHz ~ 2.7GHz RF Type: 4G, 5G Voltage - Supply: 1.1V ~ 3.3V Gain: 21.8dB Current - Supply: 5.5mA Noise Figure: 1.1dB P1dB: 5dBm Test Frequency: 2.6GHz Supplier Device Package: PG-TSNP-6-10 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
XC164CR16F20FBBKXUMA1 | Infineon Technologies | Description: IC MCU |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STT3300N16P76XPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK BG-PS76-1 Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FS770R08A6P2BBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: AG-HYBRIDD-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 654 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 80 nF @ 50 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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BGS15MA12E6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 12-UFQFN Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP5T RF Type: WCDMA Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.2V ~ 5.5V Insertion Loss: 0.45dB Frequency Range: 100MHz ~ 2.9GHz P1dB: 30dBm Test Frequency: 2.5GHz Isolation: 25dB Supplier Device Package: ATSLP-12-4 Part Status: Obsolete |
на замовлення 14221 шт: термін постачання 21-31 дні (днів) |
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C161SL25MAABXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
на замовлення 5849 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 1484.24 грн |
C164CI8E25MDBFXQMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
SAB-C164CI-LM CA+ |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
C164CILMCAKNUMA2 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
C164CI8E25MDBKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
FF900R17ME7B11BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 900A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.8 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 20379.89 грн |
10+ | 19231.57 грн |
FF225R17ME7B11BPSA1 |
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Виробник: Infineon Technologies
Description: ECONODUAL3 MODULE WITH TRENCHSTO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 225A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22.9 nF @ 25 V
Description: ECONODUAL3 MODULE WITH TRENCHSTO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 225A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 22.9 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 10625.65 грн |
FS25R12KE3GBPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 8482.54 грн |
15+ | 6901.97 грн |
FD900R12IP4DVBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 112 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 39569.25 грн |
IMD700AQ064X128AAXUMA1 |
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Виробник: Infineon Technologies
Description: CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
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IMD700AQ064X128AAXUMA1 |
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Виробник: Infineon Technologies
Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Input Type: Non-Inverting
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 1892 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 362.89 грн |
10+ | 265.54 грн |
25+ | 244.64 грн |
100+ | 208.04 грн |
250+ | 197.77 грн |
500+ | 191.58 грн |
1000+ | 183.43 грн |
IPA65R280C6 |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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BSB012N03LX3 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 3581 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
335+ | 67.93 грн |
FP50R12N2T7BPSA2 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 5850.79 грн |
BYM300B170DN2HOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 14898.35 грн |
BAT 54-02V E6327 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 30V 200MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE SCHOTTKY 30V 200MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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IGLD60R190D1SAUMA1 |
Виробник: Infineon Technologies
Description: GAN HV PG-LSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Description: GAN HV PG-LSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Supplier Device Package: PG-LSON-8-1
Part Status: Active
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
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F475R12KS4B11BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2C
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 10749.00 грн |
F475R12KS4BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 7401.83 грн |
15+ | 5857.00 грн |
EVALM10565DTOBO2 |
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Виробник: Infineon Technologies
Description: EVAL CIPOS IRSM505-065DA2
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK099
Supplied Contents: Board(s)
Part Status: Obsolete
Description: EVAL CIPOS IRSM505-065DA2
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: IRMCK099
Supplied Contents: Board(s)
Part Status: Obsolete
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BSM300GB120DLCE3256HOSA1 |
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Виробник: Infineon Technologies
Description: BSM300GB120 - INSULATED GATE BIP
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Description: BSM300GB120 - INSULATED GATE BIP
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
на замовлення 378 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 16723.14 грн |
SPB80N10L G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
Description: MOSFET N-CH 100V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 58A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: PG-TO263-3-2
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 25 V
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IAUA180N10S5N029AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Qualification: AEC-Q101
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BB 804 SF3 E6327 |
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Виробник: Infineon Technologies
Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
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BGSA143ML10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: SP4T
Voltage - Supply: 42V
Frequency Range: 6GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
Description: IC RF SWITCH SP4T 6GHZ TSLP10-2
Packaging: Cut Tape (CT)
Features: DC Blocked
Package / Case: 10-XFLGA
Mounting Type: Surface Mount
Circuit: SP4T
Voltage - Supply: 42V
Frequency Range: 6GHz
Topology: Reflective
Supplier Device Package: PG-TSLP-10-2
Part Status: Active
на замовлення 7063 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 49.34 грн |
10+ | 32.72 грн |
25+ | 28.94 грн |
100+ | 23.25 грн |
250+ | 21.39 грн |
500+ | 20.26 грн |
1000+ | 19.02 грн |
2500+ | 18.06 грн |
IPB180N06S4H1ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 120.53 грн |
IAUS300N04S4N007ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V) PG-HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V
Qualification: AEC-Q101
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од. на суму грн.
ICBFL02G |
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Виробник: Infineon Technologies
Description: FLUORESCENT BALLAST IC
Description: FLUORESCENT BALLAST IC
на замовлення 699 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
182+ | 122.48 грн |
2ED2103S06FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 43.82 грн |
2ED2103S06FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5551 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 90.72 грн |
10+ | 63.15 грн |
25+ | 57.11 грн |
100+ | 47.37 грн |
250+ | 44.41 грн |
500+ | 42.62 грн |
1000+ | 40.48 грн |
IRFU024NPBFAKLA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Description: MOSFET N-CH
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
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IPP60R600E6XKSA1 |
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Виробник: Infineon Technologies
Description: IPP60R600 - COOLMOS N-CHANNEL PO
Description: IPP60R600 - COOLMOS N-CHANNEL PO
товару немає в наявності
В кошику
од. на суму грн.
TTB6C135N16LOF |
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Виробник: Infineon Technologies
Description: TTB6C135 - BRIDGE RECTIFIER & AC
Description: TTB6C135 - BRIDGE RECTIFIER & AC
на замовлення 109 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 15670.69 грн |
ICE5QR0680AGXUMA1 |
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Виробник: Infineon Technologies
Description: IC CTLR QUASI-RES 12SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 77 W
Description: IC CTLR QUASI-RES 12SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 77 W
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
205+ | 111.39 грн |
BSC080N12LSGATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Description: TRENCH >=100V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 88.03 грн |
BSC080N12LSGATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Description: TRENCH >=100V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BSB165N15NZ3G |
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Виробник: Infineon Technologies
Description: BSB165N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
Description: BSB165N15 - 12V-300V N-CHANNEL P
Packaging: Bulk
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
на замовлення 4012 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
156+ | 139.30 грн |
BAL99 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 80V 250MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT23-3 (TO-236)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Description: DIODE GEN PURP 80V 250MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOT23-3 (TO-236)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8959+ | 2.39 грн |
BAL99E6433HTMA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
на замовлення 36786 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8266+ | 3.04 грн |
TT700N22KOFTIMHPSA1 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
Description: THYR / DIODE MODULE DK BG-PB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 40591.86 грн |
TD700N22KOFTIMHPSA1 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK BG-PB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
Description: THYR / DIODE MODULE DK BG-PB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20400A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.2 kV
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F3L50R06W1E3B11BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 600V 75A 175W
Description: IGBT MODULE 600V 75A 175W
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EVALISO1I813TTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ISO1I813T
Packaging: Bulk
Function: Digital Isolator
Type: Interface
Utilized IC / Part: ISO1I813T
Supplied Contents: Board(s)
Primary Attributes: 8-Channel (Octal)
Embedded: No
Part Status: Active
Description: EVAL BOARD FOR ISO1I813T
Packaging: Bulk
Function: Digital Isolator
Type: Interface
Utilized IC / Part: ISO1I813T
Supplied Contents: Board(s)
Primary Attributes: 8-Channel (Octal)
Embedded: No
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 9183.64 грн |
IPW65R230CFD7AXKSA1 |
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Виробник: Infineon Technologies
Description: 650V COOLMOS CFD7A SJ POWER DEVI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
Description: 650V COOLMOS CFD7A SJ POWER DEVI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 319.92 грн |
TDA5225CXUMA1 |
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Виробник: Infineon Technologies
Description: TDA5225CXU - RF RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -120dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 425MHz ~ 450MHz, 863MHz ~ 870MHz, 902MHz ~ 928MHz
Modulation or Protocol: ASK, FSK
Data Interface: SPI
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, RKE
Current - Receiving: 15mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
Description: TDA5225CXU - RF RECEIVER
Features: RSSI Equipped
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -120dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 320MHz, 425MHz ~ 450MHz, 863MHz ~ 870MHz, 902MHz ~ 928MHz
Modulation or Protocol: ASK, FSK
Data Interface: SPI
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, RKE
Current - Receiving: 15mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Obsolete
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
260+ | 87.14 грн |
CHL8212-02CRT |
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Виробник: Infineon Technologies
Description: IC REG BUCK 28VQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-28-902
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I²C
Output Phases: 2
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
Description: IC REG BUCK 28VQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-28-902
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I²C
Output Phases: 2
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
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TR10124595NOSA1 |
Виробник: Infineon Technologies
Description: TR101 W24595
Description: TR101 W24595
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REFICL8810LED42WPSRTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICL8810
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Contents: Board(s)
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR ICL8810
Features: Dimmable
Packaging: Bulk
Voltage - Output: 52V
Voltage - Input: 90 ~ 305 VAC
Contents: Board(s)
Utilized IC / Part: ICL8810
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4173.23 грн |
ICL8201 |
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Виробник: Infineon Technologies
Description: LED DRIVER, 1-SEGMENT, PDSO6
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 40kHz ~ 150kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 800mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-SOT23-6-1
Dimming: Yes
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 18V
Part Status: Active
Description: LED DRIVER, 1-SEGMENT, PDSO6
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 40kHz ~ 150kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 800mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-SOT23-6-1
Dimming: Yes
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 18V
Part Status: Active
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ICL8105XUMA2 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
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ICL8105XUMA2 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
Description: IC LED DRIVER OFFL PWM 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog, PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
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BGA9H1BN6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
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BGA9H1BN6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 0.6dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
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BGA9H1BN6E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 1.1dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
Part Status: Active
Description: IC AMP 4G/5G 2.3GHZ-2.7GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 3.3V
Gain: 21.8dB
Current - Supply: 5.5mA
Noise Figure: 1.1dB
P1dB: 5dBm
Test Frequency: 2.6GHz
Supplier Device Package: PG-TSNP-6-10
Part Status: Active
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XC164CR16F20FBBKXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU
Description: IC MCU
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FS770R08A6P2BBPSA1 |
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Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
Description: HYBRID PACK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 23324.39 грн |
BGS15MA12E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP5T 2.9GHZ ATSLP12
Packaging: Bulk
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: WCDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Insertion Loss: 0.45dB
Frequency Range: 100MHz ~ 2.9GHz
P1dB: 30dBm
Test Frequency: 2.5GHz
Isolation: 25dB
Supplier Device Package: ATSLP-12-4
Part Status: Obsolete
Description: IC RF SWITCH SP5T 2.9GHZ ATSLP12
Packaging: Bulk
Package / Case: 12-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP5T
RF Type: WCDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Insertion Loss: 0.45dB
Frequency Range: 100MHz ~ 2.9GHz
P1dB: 30dBm
Test Frequency: 2.5GHz
Isolation: 25dB
Supplier Device Package: ATSLP-12-4
Part Status: Obsolete
на замовлення 14221 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1154+ | 19.37 грн |