Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148445) > Сторінка 479 з 2475
Фото | Назва | Виробник | Інформація |
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F445MR12W1M1B76BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Vgs(th) (Max) @ Id: 5.55V @ 10mA Supplier Device Package: AG-EASY1B-2 |
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IAUC24N10S5L300ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 12µA Supplier Device Package: PG-TDSON-8-33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 6013 шт: термін постачання 21-31 дні (днів) |
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CY8C3665AXI-198 | Infineon Technologies |
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на замовлення 1480 шт: термін постачання 21-31 дні (днів) |
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TT92N12KOFKHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C Structure: Common Cathode - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.2 kV |
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TT92N08KOFKHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C Structure: Common Cathode - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 800 V |
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TT92N12KOFHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.2 kV |
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TT92N14KOFHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 130°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 104 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Part Status: Obsolete Current - On State (It (RMS)) (Max): 160 A Voltage - Off State: 1.4 kV |
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IPP037N06L3GHKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 93µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
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TLE4929CXHAM38NHAMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Features: Programmable, Temperature Compensated Package / Case: 3-SSIP Module Output Type: Open Drain Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 4V ~ 16V Technology: Hall Effect Resolution: 16 b Sensing Range: ±120mT Current - Output (Max): 15mA Current - Supply (Max): 13.4mA Supplier Device Package: PG-SSO-3-53 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLE4929CXHAM38NHAMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Features: Programmable, Temperature Compensated Package / Case: 3-SSIP Module Output Type: Open Drain Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 4V ~ 16V Technology: Hall Effect Resolution: 16 b Sensing Range: ±120mT Current - Output (Max): 15mA Current - Supply (Max): 13.4mA Supplier Device Package: PG-SSO-3-53 |
на замовлення 2986 шт: термін постачання 21-31 дні (днів) |
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CY8C20336A-24LQXI | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 24-QFN (4x4) Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 4637 шт: термін постачання 21-31 дні (днів) |
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BFN27E6327 | Infineon Technologies |
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IPP35CN10N G | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4V @ 29µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V |
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IPP030N06NF2SAKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc) Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 80µA Supplier Device Package: PG-TO220-3-U05 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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EVALPFC5KIKWWR6SYSTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Power Factor Correction Type: Power Management Utilized IC / Part: 1ED44175, IDW60C65D1, IKWH40N65WR6 Supplied Contents: Board(s) Primary Attributes: 180 ~ 264 VAC Embedded: No Part Status: Active Contents: Board(s) |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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2ED4820EMXUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 20V ~ 70V Input Type: Non-Inverting Rise / Fall Time (Typ): 3µs, 3µs (Max) Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 2.6V Current - Peak Output (Source, Sink): 300mA, 1.3A Part Status: Active DigiKey Programmable: Not Verified |
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2ED4820EMXUMA2 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 20V ~ 70V Input Type: Non-Inverting Rise / Fall Time (Typ): 3µs, 3µs (Max) Channel Type: Independent Driven Configuration: High-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 2.6V Current - Peak Output (Source, Sink): 300mA, 1.3A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2074 шт: термін постачання 21-31 дні (днів) |
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FF600R12ME4WB73BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CY90F543GSPMCR-GE1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 128KB (128K x 8) RAM Size: 6K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART Peripherals: POR, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 81 DigiKey Programmable: Not Verified |
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FP75R12W3T7B11BPSA1 | Infineon Technologies | Description: LOW POWER EASY AG-EASY3B-1 |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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FP75R12N3T7BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 13 µA Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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FP75R12N2T4B11BPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
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FP75R12N2T7B11BPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 14 µA Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V |
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В кошику од. на суму грн. | |||||||||||||||
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FP75R12N2T7BPSA2 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 14 µA Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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FP75R12N2T4BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
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FP75R12N2T4B16BPSA1 | Infineon Technologies | Description: LOW POWER ECONO AG-ECONO2B-411 |
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FP75R12N3T4B80BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO3-386 Packaging: Tray |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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ICB1FL02GXUMA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 18-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Frequency: 112kHz ~ 138kHz Type: Fluorescent Lamp Controller Operating Temperature: -25°C ~ 125°C Voltage - Supply: 3.6V ~ 17V Supplier Device Package: PG-DSO-18-2 Dimming: No Part Status: Obsolete Current - Supply: 5 mA |
на замовлення 14600 шт: термін постачання 21-31 дні (днів) |
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BGS110MC202E6433XUSA1 | Infineon Technologies |
![]() Packaging: Bulk |
на замовлення 104788 шт: термін постачання 21-31 дні (днів) |
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2EDR6259XXUMA1 | Infineon Technologies |
Description: DRIVER IC PG-DSO-14 Packaging: Tape & Reel (TR) |
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2EDR6259XXUMA1 | Infineon Technologies |
Description: DRIVER IC PG-DSO-14 Packaging: Cut Tape (CT) |
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В кошику од. на суму грн. | ||||||||||||||
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KP229E3518XTMA1 | Infineon Technologies |
![]() Features: Amplified Output, Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.5 V ~ 4.5 V Operating Pressure: 7.25PSI ~ 58.02PSI (50kPa ~ 400kPa) Pressure Type: Absolute Accuracy: ±0.87PSI (±6kPa) Operating Temperature: -40°C ~ 140°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 1571 шт: термін постачання 21-31 дні (днів) |
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KP216H1416XTMA1 | Infineon Technologies |
![]() Features: Amplified Output, Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.5 V ~ 4.5 V Operating Pressure: 7.25PSI ~ 21.76PSI (50kPa ~ 150kPa) Pressure Type: Absolute Accuracy: ±0.345PSI (±2.38kPa) Operating Temperature: -40°C ~ 140°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 1019 шт: термін постачання 21-31 дні (днів) |
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IPD06P004NSAUMA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 16.4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 16.4A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 710µA Supplier Device Package: PG-TO252-3-313 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
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IPD06P005LSAUMA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 6.5A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-TO252-3-313 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V |
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В кошику од. на суму грн. | ||||||||||||||
BSM300GA170DLS | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 300A NTC Thermistor: No Supplier Device Package: Module Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 2500 W Current - Collector Cutoff (Max): 600 µA Input Capacitance (Cies) @ Vce: 20 nF @ 25 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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EVALFANXMCPFD7TOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: IPN60R1K5PFD7S Supplied Contents: Board(s) Secondary Attributes: On-Board LEDs Embedded: Yes, MCU, 32-Bit Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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PEF 22558 E V1.1-G | Infineon Technologies |
![]() Packaging: Tray Package / Case: 256-LBGA Mounting Type: Surface Mount Function: Framer, Line Interface Unit (LIU) Interface: E1, J1, SCI, SPI, T1 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V, 3.3V Supplier Device Package: PG-LBGA-256-1 Number of Circuits: 8 Power (Watts): 150 mW |
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В кошику од. на суму грн. | |||||||||||||||
PEF 22552 E V1.1-G | Infineon Technologies |
![]() Packaging: Tray Package / Case: 160-LBGA Mounting Type: Surface Mount Function: Framer, Line Interface Unit (LIU) Interface: E1, J1, SCI, SPI, T1 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V, 3.3V Supplier Device Package: P/PG-LBGA-160-1 Number of Circuits: 2 Power (Watts): 150 mW |
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В кошику од. на суму грн. | |||||||||||||||
PEF 22552 E V1.1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 160-LBGA Mounting Type: Surface Mount Function: Framer, Line Interface Unit (LIU) Interface: E1, HDLC, J1, T1 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V, 3.3V Supplier Device Package: P/PG-LBGA-160-1 Number of Circuits: 2 |
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В кошику од. на суму грн. | |||||||||||||||
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IFX21003TNV51AKSA1 | Infineon Technologies |
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на замовлення 375 шт: термін постачання 21-31 дні (днів) |
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IPP014N06NF2SAKMA2 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 246µA Supplier Device Package: PG-TO220-3-U05 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V |
на замовлення 985 шт: термін постачання 21-31 дні (днів) |
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BSM75GAR120DN2HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 30A 235W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Obsolete Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 235 W Current - Collector Cutoff (Max): 400 µA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V |
на замовлення 535 шт: термін постачання 21-31 дні (днів) |
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BGSX210MA18E6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 18-UFQFN Exposed Pad Mounting Type: Surface Mount RF Type: LTE Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.5V ~ 3.4V Insertion Loss: 0.65dB Frequency Range: 100MHz ~ 3.8GHz Test Frequency: 2.5GHz ~ 2.7GHz Isolation: 39dB Supplier Device Package: PG-ATSLP-18 |
на замовлення 12584 шт: термін постачання 21-31 дні (днів) |
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BGSX212MA18E6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 18-UFQFN Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount RF Type: LTE Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.5V ~ 3.4V Insertion Loss: 0.9dB Frequency Range: 100MHz ~ 3.8GHz Test Frequency: 2.5GHz, 3.5GHz Isolation: 39dB Supplier Device Package: PG-ATSLP-18 |
на замовлення 8929 шт: термін постачання 21-31 дні (днів) |
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IR3566AMTRPBF | Infineon Technologies |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CIC61508OSRF3VAAAXUMA2 | Infineon Technologies |
Description: IC MCU Packaging: Bulk Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Power Supply Monitor Operating Temperature: -40°C ~ 140°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 55.8ms Typical Voltage - Threshold: Adjustable/Selectable Supplier Device Package: PG-TSSOP-38 Part Status: Last Time Buy DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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D711N68TXPSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR35217MTRPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 100°C (TJ) Voltage - Supply: 4.75V ~ 7.5V Applications: Multiphase Controller Current - Supply: 10mA Supplier Device Package: 32-MLPQ (5x5) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR35217MTRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 100°C (TJ) Voltage - Supply: 4.75V ~ 7.5V Applications: Multiphase Controller Current - Supply: 10mA Supplier Device Package: 32-MLPQ (5x5) Part Status: Active |
на замовлення 2959 шт: термін постачання 21-31 дні (днів) |
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TC3E7QX192F300SAALXUMA1 | Infineon Technologies | Description: AURIX 2G PG-LFBGA-292 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
TC3E7QF192F300SAALXUMA1 | Infineon Technologies | Description: AURIX 2G PG-LFBGA-292 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
IPA60R650CEE8210XKSA1 | Infineon Technologies | Description: MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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T740N26TOFXPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 745 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 1500 A Voltage - Off State: 2.6 kV |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IMD701AQ064X128AAXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 115°C (TJ) Voltage - Supply: 5.5V ~ 60V Input Type: Non-Inverting Supplier Device Package: PG-VQFN-64-8 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 3 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.045V, 3.85V Current - Peak Output (Source, Sink): 1.5A, 1.5A Part Status: Active Interface: CAN, I2C, SPI, UART/USART RAM Size: 16K x 8 Controller Series: XMC1404 Program Memory Type: FLASH (128kB) Applications: BLDC Controller Core Processor: ARM® Cortex®-M0 Number of I/O: 20 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMD701AQ064X128AAXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 64-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 115°C (TJ) Voltage - Supply: 5.5V ~ 60V Input Type: Non-Inverting Supplier Device Package: PG-VQFN-64-8 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 3 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.045V, 3.85V Current - Peak Output (Source, Sink): 1.5A, 1.5A Part Status: Active Interface: CAN, I2C, SPI, UART/USART RAM Size: 16K x 8 Controller Series: XMC1404 Program Memory Type: FLASH (128kB) Applications: BLDC Controller Core Processor: ARM® Cortex®-M0 Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 253 шт: термін постачання 21-31 дні (днів) |
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FP150R12N3T7B11BPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 12 µA Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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F3L150R12W2H3BOMA1 | Infineon Technologies | Description: F3L150R12W2H3B - IGBT |
на замовлення 1080 шт: термін постачання 21-31 дні (днів) |
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BA892E6770 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-80 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: PG-SCD80-2 Part Status: Active Current - Max: 100 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BA895H6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-80 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 7Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: SCD-80 Current - Max: 50 mA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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F445MR12W1M1B76BPSA1 |
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Виробник: Infineon Technologies
Description: MOSFET 4N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Description: MOSFET 4N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
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В кошику
од. на суму грн.
IAUC24N10S5L300ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Qualification: AEC-Q101
на замовлення 6013 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 101.07 грн |
10+ | 61.38 грн |
100+ | 40.63 грн |
500+ | 29.79 грн |
1000+ | 25.78 грн |
2000+ | 24.84 грн |
CY8C3665AXI-198 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Description: IC MCU 8BIT 32KB FLASH 100TQFP
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
47+ | 486.68 грн |
TT92N12KOFKHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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TT92N08KOFKHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 800V 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 800 V
Description: SCR MODULE 800V 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 800 V
товару немає в наявності
В кошику
од. на суму грн.
TT92N12KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
товару немає в наявності
В кошику
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TT92N14KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 160A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 104 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.4 kV
товару немає в наявності
В кошику
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IPP037N06L3GHKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: MOSFET N-CH 60V 90A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
TLE4929CXHAM38NHAMA1 |
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Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Features: Programmable, Temperature Compensated
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Features: Programmable, Temperature Compensated
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 117.42 грн |
TLE4929CXHAM38NHAMA1 |
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Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Features: Programmable, Temperature Compensated
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Features: Programmable, Temperature Compensated
Package / Case: 3-SSIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-53
на замовлення 2986 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 219.64 грн |
5+ | 188.82 грн |
10+ | 180.32 грн |
25+ | 159.69 грн |
50+ | 153.17 грн |
100+ | 147.22 грн |
500+ | 133.02 грн |
CY8C20336A-24LQXI |
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Виробник: Infineon Technologies
Description: IC CAPSENSE PSOC 8K FLASH 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC CAPSENSE PSOC 8K FLASH 24QFN
Packaging: Bulk
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 4637 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
100+ | 220.38 грн |
BFN27E6327 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
товару немає в наявності
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IPP35CN10N G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 27A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Description: MOSFET N-CH 100V 27A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
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IPP030N06NF2SAKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 80µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 80µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 146.43 грн |
EVALPFC5KIKWWR6SYSTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED44175
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: 1ED44175, IDW60C65D1, IKWH40N65WR6
Supplied Contents: Board(s)
Primary Attributes: 180 ~ 264 VAC
Embedded: No
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR 1ED44175
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: 1ED44175, IDW60C65D1, IKWH40N65WR6
Supplied Contents: Board(s)
Primary Attributes: 180 ~ 264 VAC
Embedded: No
Part Status: Active
Contents: Board(s)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 19783.03 грн |
2ED4820EMXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 20V ~ 70V
Input Type: Non-Inverting
Rise / Fall Time (Typ): 3µs, 3µs (Max)
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 2.6V
Current - Peak Output (Source, Sink): 300mA, 1.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 20V ~ 70V
Input Type: Non-Inverting
Rise / Fall Time (Typ): 3µs, 3µs (Max)
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 2.6V
Current - Peak Output (Source, Sink): 300mA, 1.3A
Part Status: Active
DigiKey Programmable: Not Verified
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2ED4820EMXUMA2 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 20V ~ 70V
Input Type: Non-Inverting
Rise / Fall Time (Typ): 3µs, 3µs (Max)
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 2.6V
Current - Peak Output (Source, Sink): 300mA, 1.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 20V ~ 70V
Input Type: Non-Inverting
Rise / Fall Time (Typ): 3µs, 3µs (Max)
Channel Type: Independent
Driven Configuration: High-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 2.6V
Current - Peak Output (Source, Sink): 300mA, 1.3A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2074 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 534.78 грн |
10+ | 348.30 грн |
100+ | 254.04 грн |
500+ | 206.95 грн |
FF600R12ME4WB73BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 15811.15 грн |
CY90F543GSPMCR-GE1 |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 81
DigiKey Programmable: Not Verified
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FP75R12W3T7B11BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY3B-1
Description: LOW POWER EASY AG-EASY3B-1
на замовлення 7 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 11855.97 грн |
FP75R12N3T7BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 6339.42 грн |
FP75R12N2T4B11BPSA2 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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FP75R12N2T7B11BPSA2 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 14 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 14 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
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FP75R12N2T7BPSA2 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 14 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 14 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 6370.46 грн |
FP75R12N2T4BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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FP75R12N2T4B16BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Description: LOW POWER ECONO AG-ECONO2B-411
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FP75R12N3T4B80BPSA1 |
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 12531.61 грн |
10+ | 11302.22 грн |
ICB1FL02GXUMA2 |
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Виробник: Infineon Technologies
Description: ICB1FL02G - IC CONTROLLER LIGHTI
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 112kHz ~ 138kHz
Type: Fluorescent Lamp Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 3.6V ~ 17V
Supplier Device Package: PG-DSO-18-2
Dimming: No
Part Status: Obsolete
Current - Supply: 5 mA
Description: ICB1FL02G - IC CONTROLLER LIGHTI
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 112kHz ~ 138kHz
Type: Fluorescent Lamp Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 3.6V ~ 17V
Supplier Device Package: PG-DSO-18-2
Dimming: No
Part Status: Obsolete
Current - Supply: 5 mA
на замовлення 14600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
344+ | 66.01 грн |
BGS110MC202E6433XUSA1 |
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на замовлення 104788 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6662+ | 3.67 грн |
KP229E3518XTMA1 |
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Виробник: Infineon Technologies
Description: SENSOR 58.02PSIA 4.5V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 7.25PSI ~ 58.02PSI (50kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.87PSI (±6kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR 58.02PSIA 4.5V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 7.25PSI ~ 58.02PSI (50kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.87PSI (±6kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1571 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 275.35 грн |
5+ | 237.26 грн |
10+ | 226.91 грн |
25+ | 201.31 грн |
50+ | 193.39 грн |
100+ | 186.11 грн |
500+ | 168.66 грн |
KP216H1416XTMA1 |
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Виробник: Infineon Technologies
Description: SENSOR 21.76PSIA 4.5V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 7.25PSI ~ 21.76PSI (50kPa ~ 150kPa)
Pressure Type: Absolute
Accuracy: ±0.345PSI (±2.38kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: SENSOR 21.76PSIA 4.5V DSOF8
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.5 V ~ 4.5 V
Operating Pressure: 7.25PSI ~ 21.76PSI (50kPa ~ 150kPa)
Pressure Type: Absolute
Accuracy: ±0.345PSI (±2.38kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1019 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 366.87 грн |
5+ | 308.22 грн |
10+ | 292.20 грн |
25+ | 256.72 грн |
50+ | 245.12 грн |
100+ | 234.73 грн |
500+ | 211.06 грн |
IPD06P004NSAUMA1 |
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 16.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: PG-TO252-3-313
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Description: MOSFET P-CH 60V 16.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: PG-TO252-3-313
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
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IPD06P005LSAUMA1 |
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 6.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO252-3-313
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Description: MOSFET P-CH 60V 6.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 270µA
Supplier Device Package: PG-TO252-3-313
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
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BSM300GA170DLS |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 13350.90 грн |
EVALFANXMCPFD7TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IPN60R1K5PFD7S
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IPN60R1K5PFD7S
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Description: EVAL BOARD FOR IPN60R1K5PFD7S
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IPN60R1K5PFD7S
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 9802.78 грн |
PEF 22558 E V1.1-G |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 256-LBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, J1, SCI, SPI, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: PG-LBGA-256-1
Number of Circuits: 8
Power (Watts): 150 mW
Description: IC TELECOM INTERFACE 256-LBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, J1, SCI, SPI, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: PG-LBGA-256-1
Number of Circuits: 8
Power (Watts): 150 mW
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PEF 22552 E V1.1-G |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 160LBGA
Packaging: Tray
Package / Case: 160-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, J1, SCI, SPI, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: P/PG-LBGA-160-1
Number of Circuits: 2
Power (Watts): 150 mW
Description: IC TELECOM INTERFACE 160LBGA
Packaging: Tray
Package / Case: 160-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, J1, SCI, SPI, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: P/PG-LBGA-160-1
Number of Circuits: 2
Power (Watts): 150 mW
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PEF 22552 E V1.1 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE 160LBGA
Packaging: Tray
Package / Case: 160-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, HDLC, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: P/PG-LBGA-160-1
Number of Circuits: 2
Description: IC TELECOM INTERFACE 160LBGA
Packaging: Tray
Package / Case: 160-LBGA
Mounting Type: Surface Mount
Function: Framer, Line Interface Unit (LIU)
Interface: E1, HDLC, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Supplier Device Package: P/PG-LBGA-160-1
Number of Circuits: 2
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IFX21003TNV51AKSA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V/15V TO220-5
Description: IC REG LINEAR 5V/15V TO220-5
на замовлення 375 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 126.53 грн |
10+ | 109.59 грн |
25+ | 103.39 грн |
100+ | 82.68 грн |
250+ | 77.63 грн |
IPP014N06NF2SAKMA2 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 246µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 30 V
на замовлення 985 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 296.84 грн |
50+ | 161.87 грн |
100+ | 150.80 грн |
500+ | 116.83 грн |
BSM75GAR120DN2HOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 30A 235W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 235 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: IGBT MOD 1200V 30A 235W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 235 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
на замовлення 535 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 5855.17 грн |
BGSX210MA18E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH 3.8GHZ ATSLP-18
Packaging: Bulk
Package / Case: 18-UFQFN Exposed Pad
Mounting Type: Surface Mount
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz ~ 2.7GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
Description: IC RF SWITCH 3.8GHZ ATSLP-18
Packaging: Bulk
Package / Case: 18-UFQFN Exposed Pad
Mounting Type: Surface Mount
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz ~ 2.7GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
на замовлення 12584 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
618+ | 36.36 грн |
BGSX212MA18E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH 3.8GHZ ATSLP-18
Packaging: Bulk
Package / Case: 18-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.9dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz, 3.5GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
Description: IC RF SWITCH 3.8GHZ ATSLP-18
Packaging: Bulk
Package / Case: 18-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
RF Type: LTE
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.4V
Insertion Loss: 0.9dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 2.5GHz, 3.5GHz
Isolation: 39dB
Supplier Device Package: PG-ATSLP-18
на замовлення 8929 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
593+ | 37.85 грн |
IR3566AMTRPBF |
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Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Description: IC REG CTRLR INTEL 2OUT 48QFN
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
83+ | 284.77 грн |
CIC61508OSRF3VAAAXUMA2 |
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Power Supply Monitor
Operating Temperature: -40°C ~ 140°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 55.8ms Typical
Voltage - Threshold: Adjustable/Selectable
Supplier Device Package: PG-TSSOP-38
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC MCU
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Power Supply Monitor
Operating Temperature: -40°C ~ 140°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 55.8ms Typical
Voltage - Threshold: Adjustable/Selectable
Supplier Device Package: PG-TSSOP-38
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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D711N68TXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 6.8KV 1070A
Description: DIODE GEN PURP 6.8KV 1070A
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IR35217MTRPBF |
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Виробник: Infineon Technologies
Description: IC CONTROLLER 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Active
Description: IC CONTROLLER 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Active
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IR35217MTRPBF |
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Виробник: Infineon Technologies
Description: IC CONTROLLER 56QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Active
Description: IC CONTROLLER 56QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
Part Status: Active
на замовлення 2959 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 381.99 грн |
10+ | 279.79 грн |
25+ | 257.98 грн |
100+ | 219.54 грн |
250+ | 208.79 грн |
500+ | 202.31 грн |
1000+ | 193.74 грн |
TC3E7QX192F300SAALXUMA1 |
Виробник: Infineon Technologies
Description: AURIX 2G PG-LFBGA-292
Description: AURIX 2G PG-LFBGA-292
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TC3E7QF192F300SAALXUMA1 |
Виробник: Infineon Technologies
Description: AURIX 2G PG-LFBGA-292
Description: AURIX 2G PG-LFBGA-292
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IPA60R650CEE8210XKSA1 |
Виробник: Infineon Technologies
Description: MOSFET
Description: MOSFET
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T740N26TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2600V 1500A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
Description: SCR MODULE 2600V 1500A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 13606.75 грн |
IMD701AQ064X128AAXUMA1 |
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Виробник: Infineon Technologies
Description: CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M0
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M0
Number of I/O: 20
DigiKey Programmable: Not Verified
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IMD701AQ064X128AAXUMA1 |
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Виробник: Infineon Technologies
Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M0
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 64-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C (TJ)
Voltage - Supply: 5.5V ~ 60V
Input Type: Non-Inverting
Supplier Device Package: PG-VQFN-64-8
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.045V, 3.85V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
Interface: CAN, I2C, SPI, UART/USART
RAM Size: 16K x 8
Controller Series: XMC1404
Program Memory Type: FLASH (128kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M0
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 253 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 362.89 грн |
10+ | 265.54 грн |
25+ | 244.64 грн |
100+ | 208.04 грн |
250+ | 197.77 грн |
FP150R12N3T7B11BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 11898.95 грн |
F3L150R12W2H3BOMA1 |
Виробник: Infineon Technologies
Description: F3L150R12W2H3B - IGBT
Description: F3L150R12W2H3B - IGBT
на замовлення 1080 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 4057.04 грн |
BA892E6770 |
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Виробник: Infineon Technologies
Description: MIXER DIODE, VERY HIGH FREQUENCY
Packaging: Bulk
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SCD80-2
Part Status: Active
Current - Max: 100 mA
Description: MIXER DIODE, VERY HIGH FREQUENCY
Packaging: Bulk
Package / Case: SC-80
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SCD80-2
Part Status: Active
Current - Max: 100 mA
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BA895H6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 50V SCD80
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 50 mA
Description: RF DIODE PIN 50V SCD80
Packaging: Bulk
Package / Case: SC-80
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: SCD-80
Current - Max: 50 mA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9000+ | 2.93 грн |