Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149659) > Сторінка 479 з 2495
| Фото | Назва | Виробник | Інформація |
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IM523X6AXKMA1 | Infineon Technologies |
Description: CIPOS MINI PG-MDIP-24Packaging: Tube Package / Case: 24-PowerDIP Module (1.043", 26.50mm) Mounting Type: Through Hole Function: Controller - Speed Current - Output: 17A Operating Temperature: -40°C ~ 125°C Output Configuration: Half Bridge (3) Voltage - Supply: 1V ~ 20V Applications: General Purpose Technology: IGBT Supplier Device Package: PG-MDIP-24 Motor Type - Stepper: Multiphase Motor Type - AC, DC: AC, Synchronous Part Status: Active |
на замовлення 279 шт: термін постачання 21-31 дні (днів) |
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1EDN7146UXTSA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE TSNP-7Packaging: Tape & Reel (TR) Driven Configuration: High-Side or Low-Side Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1EDN7146UXTSA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE TSNP-7Packaging: Cut Tape (CT) Driven Configuration: High-Side or Low-Side Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 4397 шт: термін постачання 21-31 дні (днів) |
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1EDN7116UXTSA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE TSNP-7Packaging: Tape & Reel (TR) Driven Configuration: High-Side or Low-Side Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1EDN7116UXTSA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE TSNP-7Packaging: Cut Tape (CT) Driven Configuration: High-Side or Low-Side Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1823 шт: термін постачання 21-31 дні (днів) |
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CY7C1470BV33-167BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGA |
на замовлення 142 шт: термін постачання 21-31 дні (днів) |
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CY7C1470V33-167AXI | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 100TQFP |
на замовлення 79 шт: термін постачання 21-31 дні (днів) |
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CY7C1440SV33-167AXC | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 100TQFP Packaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
на замовлення 925 шт: термін постачання 21-31 дні (днів) |
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CY7C1470BV33-167AXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 100TQFPPackaging: Bulk Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 2M x 36 DigiKey Programmable: Not Verified |
на замовлення 7482 шт: термін постачання 21-31 дні (днів) |
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IPB19DP10NMATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13.8A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 12A, 10V Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.04mA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB19DP10NMATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13.8A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 12A, 10V Power Dissipation (Max): 3.8W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.04mA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V |
на замовлення 675 шт: термін постачання 21-31 дні (днів) |
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TLI4946-2L | Infineon Technologies |
Description: TLI4946 - HALL SWITCHFeatures: Temperature Compensated Packaging: Bulk Package / Case: 3-SSIP, SSO-3-02 Output Type: Open Drain Polarization: South Pole Mounting Type: Through Hole Function: Latch Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 3.5mT Trip, -3.5mT Release Current - Output (Max): 20mA Current - Supply (Max): 6mA Supplier Device Package: PG-SSO-3-2 Test Condition: 25°C |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLE49612MXTMA1 | Infineon Technologies |
Description: MAG SW IC HALL EFFECT SOT23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE49612MXTMA1 | Infineon Technologies |
Description: MAG SW IC HALL EFFECT SOT23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLF4949SJ | Infineon Technologies |
Description: IC REG LIN FIXED POS LDO REG 5V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IPP016N06NF2SAKMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 194A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 186µA Supplier Device Package: PG-TO220-3-U05 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V |
на замовлення 806 шт: термін постачання 21-31 дні (днів) |
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IPP019N06NF2SAKMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 129µA Supplier Device Package: PG-TO220-3-U05 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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| PSB21483FV1.7 | Infineon Technologies |
Description: INCA-S CODEC WITH ACOUSTIC ECHO Packaging: Bulk |
на замовлення 480 шт: термін постачання 21-31 дні (днів) |
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PSB21911NV5.2 | Infineon Technologies |
Description: IEC-Q TEISDN ECHO CANCELLATION Packaging: Bulk |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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PEB2091NV5.2 | Infineon Technologies |
Description: ISDN ECHO-CANCELLATION CIRCUIT-QPackaging: Bulk Package / Case: 44-LCC (J-Lead) Mounting Type: Surface Mount Function: ISDN Interface: IOM-2, PCM Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Supplier Device Package: 44-PLCC (16.6x16.6) Number of Circuits: 1 |
на замовлення 1315 шт: термін постачання 21-31 дні (днів) |
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| PEF2091NV5.2 | Infineon Technologies |
Description: ISDN ECHO CANCELLER, 1-FUNC Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PEB20902NV2.3GIEC-TA | Infineon Technologies | Description: ISDN ECHO-CANCELLATION CIRCUIT-T |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PEB2091NV5.3 | Infineon Technologies |
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IM73A135V01XTSA1 | Infineon Technologies |
Description: MIC MEMS ANALOG NC -38DBPackaging: Tape & Reel (TR) Output Type: Analog Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm) Sensitivity: -38dB Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 73dB Termination: Solder Pads Direction: Noise Cancelling Port Location: Top Height (Max): 0.039" (1.00mm) Part Status: Active Voltage - Rated: 2.75 V Current - Supply: 170 µA Voltage Range: 1.52 V ~ 3 V Frequency Range: 20 Hz ~ 20 kHz |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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IM73A135V01XTSA1 | Infineon Technologies |
Description: MIC MEMS ANALOG NC -38DBPackaging: Cut Tape (CT) Output Type: Analog Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm) Sensitivity: -38dB Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 73dB Termination: Solder Pads Direction: Noise Cancelling Port Location: Top Height (Max): 0.039" (1.00mm) Part Status: Active Voltage - Rated: 2.75 V Current - Supply: 170 µA Voltage Range: 1.52 V ~ 3 V Frequency Range: 20 Hz ~ 20 kHz |
на замовлення 18284 шт: термін постачання 21-31 дні (днів) |
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| FS75R12KT4BPSA2 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2B-411Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS75R12KT4BPSA1 | Infineon Technologies |
Description: GBT MODULE 1200V 75A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2-6 IGBT Type: Trench Field Stop Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FS75R12W2T4PBPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY2B-411 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-EASY2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 107 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 375 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS75R12KT4B11BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2B-411Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FS75R12W2T4PB11BPSA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Tray Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IDK10G120C5XTMA1 | Infineon Technologies |
Description: DIODE SIC 1.2KV 31.9A PGTO26321Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 525pF @ 1V, 1MHz Current - Average Rectified (Io): 31.9A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 18 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDK10G120C5XTMA1 | Infineon Technologies |
Description: DIODE SIC 1.2KV 31.9A PGTO26321Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 525pF @ 1V, 1MHz Current - Average Rectified (Io): 31.9A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 18 µA @ 1200 V |
на замовлення 729 шт: термін постачання 21-31 дні (днів) |
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TLE4274DV33ATMA2 | Infineon Technologies |
Description: IC REG LIN 3.3V 400MA TO252-3-11Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 3.3V Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 1.2V @ 300mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE4274DV33ATMA2 | Infineon Technologies |
Description: IC REG LIN 3.3V 400MA TO252-3-11Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 3.3V Grade: Automotive PSRR: 60dB (100Hz) Voltage Dropout (Max): 1.2V @ 300mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA Qualification: AEC-Q100 |
на замовлення 2654 шт: термін постачання 21-31 дні (днів) |
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TC277T64F200SDBLXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC277T64F200SDBKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, POR, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PTFA212401E V4 | Infineon Technologies |
Description: FET RF 65V 2.14GHZ H-36260-2Packaging: Tray Package / Case: H-36260-2 Current Rating (Amps): 10µA Mounting Type: Chassis Mount Frequency: 2.14GHz Power - Output: 50W Gain: 15.8dB Technology: LDMOS Supplier Device Package: H-36260-2 Part Status: Obsolete Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 1.6 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PTFA212401E V4 R250 | Infineon Technologies |
Description: RF MOSFET LDMOS 30V H-36260-2Packaging: Tape & Reel (TR) Package / Case: H-36260-2 Current Rating (Amps): 10µA Mounting Type: Chassis Mount Frequency: 2.14GHz Power - Output: 50W Gain: 15.8dB Technology: LDMOS Supplier Device Package: H-36260-2 Voltage - Rated: 65 V Voltage - Test: 30 V Current - Test: 1.6 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FF300R17ME4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 375A 1800W |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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KITIM72D128V01FLEXTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IM72D128V01Packaging: Bulk Function: MEMS Omnidirectional Microphones Type: Audio Utilized IC / Part: IM72D128V01 Supplied Contents: Board(s) Embedded: No Part Status: Active Contents: Board(s) Secondary Attributes: Digital Output |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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ICE5BR3995BZXKLA1 | Infineon Technologies |
Description: COOLSET (INCL. GEN5) PG-DIP-7Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 950V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Part Status: Active Power (Watts): 30 W |
на замовлення 1930 шт: термін постачання 21-31 дні (днів) |
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ICE5BR4780BZXKLA1 | Infineon Technologies |
Description: COOLSET (INCL. GEN5) PG-DIP-7Packaging: Tape & Reel (TR) Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Part Status: Active Power (Watts): 27.5 W |
на замовлення 1916 шт: термін постачання 21-31 дні (днів) |
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ICE5BR4780BZXKLA1 | Infineon Technologies |
Description: COOLSET (INCL. GEN5) PG-DIP-7Packaging: Cut Tape (CT) Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Part Status: Active Power (Watts): 27.5 W |
на замовлення 1916 шт: термін постачання 21-31 дні (днів) |
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EVAL5BR4780BZ450MA1TOBO1 | Infineon Technologies |
Description: EVALUATION BOARD FOR ICE5BR4780BPackaging: Bulk Voltage - Output: 15V Voltage - Input: 85 ~ 264 VAC Current - Output: 450mA Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: ICE5BR4780BZ Supplied Contents: Board(s) Main Purpose: AC/DC Converter Outputs and Type: 1, Non-Isolated Part Status: Active Power - Output: 6.75 W |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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EVAL5BR3995BZBUCK1TOBO1 | Infineon Technologies |
Description: EVALUATION BOARD FOR ICE5BR3995Packaging: Bulk Voltage - Output: 18V Voltage - Input: 85 ~ 460 VAC Current - Output: 300mA Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: ICE5BR3995BZ Supplied Contents: Board(s) Main Purpose: AC/DC Converter Outputs and Type: 1, Non-Isolated Part Status: Active Power - Output: 5.4 W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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REF5BR3995BZ16W1TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICE5BR3995BZPackaging: Bulk Voltage - Output: 5V, 12V, 15V Voltage - Input: 85 ~ 264 VAC Current - Output: 900mA, 300mA, 150mA Contents: Board(s) Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5BR3995BZ Supplied Contents: Board(s) Main Purpose: AC/DC, Non-Isolated Outputs and Type: 3 Non-Isolated Outputs Part Status: Active Power - Output: 16W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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REF5BR3995CZ16W1TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICE5BR3995CZPackaging: Bulk Voltage - Output: 5V, 5V, 12V Voltage - Input: 85 ~ 460 VAC Current - Output: 1A, 200mA, 200mA Contents: Board(s) Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5BR3995CZ Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 3 Isolated Outputs Part Status: Active Power - Output: 16W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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REF5BR4780BZ15W1TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICE5BR4780BZPackaging: Bulk Voltage - Output: 5V, 12V, 15V Voltage - Input: 85 ~ 264 VAC Current - Output: 800mA, 300mA, 150mA Contents: Board(s) Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5BR4780BZ Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 3 Non-Isolated Outputs Part Status: Active Power - Output: 15W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IGO60R070D1AUMA1 | Infineon Technologies |
Description: GANFET N-CH 600V 31A 20DSOPackaging: Tape & Reel (TR) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGO60R070D1AUMA1 | Infineon Technologies |
Description: GANFET N-CH 600V 31A 20DSOPackaging: Cut Tape (CT) Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGO60R070D1AUMA1 | Infineon Technologies |
Description: GANFET N-CH 600V 31A 20DSOPackaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
на замовлення 1353 шт: термін постачання 21-31 дні (днів) |
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IGOT60R070D1AUMA1 | Infineon Technologies |
Description: GANFET N-CH 600V 31A 20DSOPackaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
на замовлення 28 шт: термін постачання 21-31 дні (днів) |
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IGT60R070D1E8220ATMA1 | Infineon Technologies |
Description: GAN HV Packaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IGOT60R070D1E8220AUMA1 | Infineon Technologies |
Description: GAN HV Packaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-87 Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IGO60R070D1E8220AUMA1 | Infineon Technologies |
Description: GAN HV Packaging: Bulk Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-85 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FS800R07A2E3BOSA4 | Infineon Technologies |
Description: IGBT MOD ATV 800A HYBRID PACK2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 550A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 700 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 52 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS770R08A6P2LBBPSA1 | Infineon Technologies |
Description: HYBRID PACK DRIVEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: AG-HYBRIDD-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 654 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 80 nF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FS05MR12A6MA1BBPSA1 | Infineon Technologies |
Description: HYBRID PACK DRIVE SIC AG-HYBRIDDPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A Supplier Device Package: AG-HYBRIDD-2 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS380R12A6T4LBBPSA1 | Infineon Technologies |
Description: HYBRID PACK DRIVE AG-HYBRIDD-1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 3 Independent NTC Thermistor: No Supplier Device Package: AG-HYBRIDD-2 Part Status: Active Current - Collector (Ic) (Max): 380 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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| RX98-3 | Infineon Technologies | Description: RF TRANSMITTER |
на замовлення 9245 шт: термін постачання 21-31 дні (днів) |
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| IM523X6AXKMA1 |
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Виробник: Infineon Technologies
Description: CIPOS MINI PG-MDIP-24
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Function: Controller - Speed
Current - Output: 17A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 1V ~ 20V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: PG-MDIP-24
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Description: CIPOS MINI PG-MDIP-24
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.043", 26.50mm)
Mounting Type: Through Hole
Function: Controller - Speed
Current - Output: 17A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 1V ~ 20V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: PG-MDIP-24
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
на замовлення 279 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 782.70 грн |
| 14+ | 574.16 грн |
| 28+ | 545.21 грн |
| 112+ | 470.85 грн |
| 252+ | 453.40 грн |
| 1EDN7146UXTSA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE TSNP-7
Packaging: Tape & Reel (TR)
Driven Configuration: High-Side or Low-Side
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE TSNP-7
Packaging: Tape & Reel (TR)
Driven Configuration: High-Side or Low-Side
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 1EDN7146UXTSA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE TSNP-7
Packaging: Cut Tape (CT)
Driven Configuration: High-Side or Low-Side
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE TSNP-7
Packaging: Cut Tape (CT)
Driven Configuration: High-Side or Low-Side
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4397 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.02 грн |
| 10+ | 41.64 грн |
| 25+ | 37.46 грн |
| 100+ | 30.80 грн |
| 250+ | 28.73 грн |
| 500+ | 27.48 грн |
| 1000+ | 26.03 грн |
| 1EDN7116UXTSA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE TSNP-7
Packaging: Tape & Reel (TR)
Driven Configuration: High-Side or Low-Side
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE TSNP-7
Packaging: Tape & Reel (TR)
Driven Configuration: High-Side or Low-Side
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 1EDN7116UXTSA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE TSNP-7
Packaging: Cut Tape (CT)
Driven Configuration: High-Side or Low-Side
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE TSNP-7
Packaging: Cut Tape (CT)
Driven Configuration: High-Side or Low-Side
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1823 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.13 грн |
| 10+ | 44.42 грн |
| 25+ | 40.00 грн |
| 100+ | 32.94 грн |
| 250+ | 30.75 грн |
| 500+ | 29.43 грн |
| 1000+ | 27.88 грн |
| CY7C1470BV33-167BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Description: IC SRAM 72MBIT PAR 165FBGA
на замовлення 142 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 10581.82 грн |
| CY7C1470V33-167AXI |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 100TQFP
Description: IC SRAM 72MBIT PAR 100TQFP
на замовлення 79 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 13277.48 грн |
| CY7C1440SV33-167AXC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
на замовлення 925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 3838.93 грн |
| CY7C1470BV33-167AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 7482 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 11159.80 грн |
| IPB19DP10NMATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 12A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 12A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| IPB19DP10NMATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 12A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 12A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 171.01 грн |
| 10+ | 106.09 грн |
| 100+ | 72.45 грн |
| 500+ | 54.49 грн |
| TLI4946-2L |
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Виробник: Infineon Technologies
Description: TLI4946 - HALL SWITCH
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Description: TLI4946 - HALL SWITCH
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 701+ | 32.23 грн |
| TLE49612MXTMA1 |
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Виробник: Infineon Technologies
Description: MAG SW IC HALL EFFECT SOT23-3
Description: MAG SW IC HALL EFFECT SOT23-3
товару немає в наявності
В кошику
од. на суму грн.
| TLE49612MXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SW IC HALL EFFECT SOT23-3
Description: MAG SW IC HALL EFFECT SOT23-3
товару немає в наявності
В кошику
од. на суму грн.
| TLF4949SJ |
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Виробник: Infineon Technologies
Description: IC REG LIN FIXED POS LDO REG 5V
Description: IC REG LIN FIXED POS LDO REG 5V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 866+ | 29.05 грн |
| IPP016N06NF2SAKMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 186µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 186µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
на замовлення 806 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 194.85 грн |
| 50+ | 73.98 грн |
| 100+ | 72.27 грн |
| 500+ | 61.40 грн |
| IPP019N06NF2SAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 129µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 129µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 30 V
на замовлення 102 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.55 грн |
| 50+ | 70.07 грн |
| 100+ | 68.55 грн |
| PSB21483FV1.7 |
на замовлення 480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 2368.74 грн |
| PSB21911NV5.2 |
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 855.23 грн |
| PEB2091NV5.2 |
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Виробник: Infineon Technologies
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of Circuits: 1
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of Circuits: 1
на замовлення 1315 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 973.87 грн |
| PEB20902NV2.3GIEC-TA |
Виробник: Infineon Technologies
Description: ISDN ECHO-CANCELLATION CIRCUIT-T
Description: ISDN ECHO-CANCELLATION CIRCUIT-T
товару немає в наявності
В кошику
од. на суму грн.
| PEB2091NV5.3 |
![]() |
Виробник: Infineon Technologies
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
Description: ISDN ECHO-CANCELLATION CIRCUIT-Q
товару немає в наявності
В кошику
од. на суму грн.
| IM73A135V01XTSA1 |
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Виробник: Infineon Technologies
Description: MIC MEMS ANALOG NC -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
Description: MIC MEMS ANALOG NC -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 80.78 грн |
| 2000+ | 75.18 грн |
| IM73A135V01XTSA1 |
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Виробник: Infineon Technologies
Description: MIC MEMS ANALOG NC -38DB
Packaging: Cut Tape (CT)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
Description: MIC MEMS ANALOG NC -38DB
Packaging: Cut Tape (CT)
Output Type: Analog
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -38dB
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 73dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Top
Height (Max): 0.039" (1.00mm)
Part Status: Active
Voltage - Rated: 2.75 V
Current - Supply: 170 µA
Voltage Range: 1.52 V ~ 3 V
Frequency Range: 20 Hz ~ 20 kHz
на замовлення 18284 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 162.79 грн |
| 10+ | 123.03 грн |
| 25+ | 111.95 грн |
| 50+ | 97.96 грн |
| 100+ | 91.39 грн |
| 250+ | 86.36 грн |
| FS75R12KT4BPSA2 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FS75R12KT4BPSA1 |
Виробник: Infineon Technologies
Description: GBT MODULE 1200V 75A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-6
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: GBT MODULE 1200V 75A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2-6
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FS75R12W2T4PBPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 375 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: LOW POWER EASY AG-EASY2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 375 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FS75R12KT4B11BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IDK10G120C5XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| IDK10G120C5XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Description: DIODE SIC 1.2KV 31.9A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 31.9A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
на замовлення 729 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 342.84 грн |
| 10+ | 218.59 грн |
| 100+ | 155.48 грн |
| 500+ | 138.17 грн |
| TLE4274DV33ATMA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 53.37 грн |
| TLE4274DV33ATMA2 |
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Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 1.2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
на замовлення 2654 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.88 грн |
| 10+ | 75.61 грн |
| 25+ | 68.66 грн |
| 100+ | 57.23 грн |
| 250+ | 53.80 грн |
| 500+ | 51.73 грн |
| 1000+ | 49.20 грн |
| TC277T64F200SDBLXUMA2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
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В кошику
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| TC277T64F200SDBKXUMA2 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| PTFA212401E V4 |
![]() |
Виробник: Infineon Technologies
Description: FET RF 65V 2.14GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
Description: FET RF 65V 2.14GHZ H-36260-2
Packaging: Tray
Package / Case: H-36260-2
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
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В кошику
од. на суму грн.
| PTFA212401E V4 R250 |
![]() |
Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-36260-2
Packaging: Tape & Reel (TR)
Package / Case: H-36260-2
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
Description: RF MOSFET LDMOS 30V H-36260-2
Packaging: Tape & Reel (TR)
Package / Case: H-36260-2
Current Rating (Amps): 10µA
Mounting Type: Chassis Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-36260-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
товару немає в наявності
В кошику
од. на суму грн.
| FF300R17ME4B11BOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1700V 375A 1800W
Description: IGBT MOD 1700V 375A 1800W
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 12918.28 грн |
| KITIM72D128V01FLEXTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IM72D128V01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM72D128V01
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Digital Output
Description: EVAL BOARD FOR IM72D128V01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: IM72D128V01
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Digital Output
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5301.32 грн |
| 10+ | 5093.42 грн |
| ICE5BR3995BZXKLA1 |
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Виробник: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 30 W
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 30 W
на замовлення 1930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 165.26 грн |
| 10+ | 113.45 грн |
| 50+ | 95.15 грн |
| 100+ | 83.96 грн |
| 250+ | 78.34 грн |
| 500+ | 74.95 грн |
| 1000+ | 70.97 грн |
| ICE5BR4780BZXKLA1 |
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Виробник: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
на замовлення 1916 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 62.30 грн |
| 100+ | 56.74 грн |
| 150+ | 55.11 грн |
| 250+ | 50.02 грн |
| 350+ | 49.02 грн |
| 500+ | 48.07 грн |
| 1250+ | 45.25 грн |
| ICE5BR4780BZXKLA1 |
![]() |
Виробник: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Cut Tape (CT)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 27.5 W
на замовлення 1916 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.30 грн |
| 10+ | 70.54 грн |
| 25+ | 63.97 грн |
| EVAL5BR4780BZ450MA1TOBO1 |
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Виробник: Infineon Technologies
Description: EVALUATION BOARD FOR ICE5BR4780B
Packaging: Bulk
Voltage - Output: 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 450mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 6.75 W
Description: EVALUATION BOARD FOR ICE5BR4780B
Packaging: Bulk
Voltage - Output: 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 450mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 6.75 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8349.09 грн |
| EVAL5BR3995BZBUCK1TOBO1 |
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Виробник: Infineon Technologies
Description: EVALUATION BOARD FOR ICE5BR3995
Packaging: Bulk
Voltage - Output: 18V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 300mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 5.4 W
Description: EVALUATION BOARD FOR ICE5BR3995
Packaging: Bulk
Voltage - Output: 18V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 300mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
Power - Output: 5.4 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8467.48 грн |
| REF5BR3995BZ16W1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR3995BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 900mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 16W
Description: EVAL BOARD FOR ICE5BR3995BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 900mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Non-Isolated
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 16W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8713.31 грн |
| REF5BR3995CZ16W1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR3995CZ
Packaging: Bulk
Voltage - Output: 5V, 5V, 12V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 1A, 200mA, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995CZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Isolated Outputs
Part Status: Active
Power - Output: 16W
Description: EVAL BOARD FOR ICE5BR3995CZ
Packaging: Bulk
Voltage - Output: 5V, 5V, 12V
Voltage - Input: 85 ~ 460 VAC
Current - Output: 1A, 200mA, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR3995CZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Isolated Outputs
Part Status: Active
Power - Output: 16W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8713.31 грн |
| REF5BR4780BZ15W1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE5BR4780BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 800mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 15W
Description: EVAL BOARD FOR ICE5BR4780BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 800mA, 300mA, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR4780BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3 Non-Isolated Outputs
Part Status: Active
Power - Output: 15W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8326.89 грн |
| IGO60R070D1AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IGO60R070D1AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IGO60R070D1AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 1335.65 грн |
| IGOT60R070D1AUMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 20DSO
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 1285.00 грн |
| IGT60R070D1E8220ATMA1 |
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GAN HV
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IGOT60R070D1E8220AUMA1 |
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-87
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IGO60R070D1E8220AUMA1 |
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GAN HV
Packaging: Bulk
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товару немає в наявності
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од. на суму грн.
| FS800R07A2E3BOSA4 |
Виробник: Infineon Technologies
Description: IGBT MOD ATV 800A HYBRID PACK2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 52 nF @ 25 V
Description: IGBT MOD ATV 800A HYBRID PACK2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 550A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 52 nF @ 25 V
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од. на суму грн.
| FS770R08A6P2LBBPSA1 |
![]() |
Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
Description: HYBRID PACK DRIVE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 654 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
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| FS05MR12A6MA1BBPSA1 |
![]() |
Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
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од. на суму грн.
| FS380R12A6T4LBBPSA1 |
![]() |
Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
NTC Thermistor: No
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Description: HYBRID PACK DRIVE AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
NTC Thermistor: No
Supplier Device Package: AG-HYBRIDD-2
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 49886.55 грн |
| RX98-3 |
Виробник: Infineon Technologies
Description: RF TRANSMITTER
Description: RF TRANSMITTER
на замовлення 9245 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 402+ | 56.37 грн |



































