Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149679) > Сторінка 473 з 2495
| Фото | Назва | Виробник | Інформація |
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SAK-TC297TC-96F300S BB | Infineon Technologies |
Description: IC MCU 32BIT 6MB FLASH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 6MB (6M x 8) RAM Size: 456K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Data Converters: A/D 94x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Obsolete Number of I/O: 169 DigiKey Programmable: Not Verified |
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SAK-TC297TP-96F300N BC | Infineon Technologies |
Description: IC MCU 32BIT 6MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 6MB (6M x 8) RAM Size: 728K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Data Converters: A/D 94x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 169 DigiKey Programmable: Not Verified |
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TC297TP96F300SBBKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 6MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 6MB (6M x 8) RAM Size: 456K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Data Converters: A/D 94x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active Number of I/O: 169 DigiKey Programmable: Not Verified |
товару немає в наявності |
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TC377TP96F300SAALXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 6MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 6MB (6M x 8) RAM Size: 1.1M x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT Peripherals: DMA, I2S, PWM, WDT Supplier Device Package: PG-LFBGA-292-6 Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
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IGP01N120H2XKSA1036 | Infineon Technologies |
Description: IGP01N120 - DISCRETE IGBT WITHOU |
товару немає в наявності |
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DD500S33HE3BPSA1 | Infineon Technologies |
Description: DIODE MOD GP 3300V AGIHVB130-3Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Supplier Device Package: AG-IHVB130-3 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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CY8C4025LQI-S402 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 32QFNPackaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 1x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Part Status: Active Number of I/O: 27 DigiKey Programmable: Not Verified |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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CY8C4025AZI-S403 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 48TQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 1x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Part Status: Active Number of I/O: 36 DigiKey Programmable: Not Verified |
на замовлення 439 шт: термін постачання 21-31 дні (днів) |
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TLE9012DQUDTRBMS2TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLE9012DQUPackaging: Bulk Function: Battery Monitor Type: Power Management Contents: Board(s), Cable(s) Utilized IC / Part: TLE9012DQU Supplied Contents: Board(s), Cable(s) Primary Attributes: 4.75V ~ 60V Supply Secondary Attributes: On-Board LEDs Embedded: Yes, MCU, 32-Bit Part Status: Active |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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| T600N95TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 9.5KV 930A TO-200ACPackaging: Tray Package / Case: TO-200AC Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 350 mA Current - Gate Trigger (Igt) (Max): 350 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 12800A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 830 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 930 A Voltage - Off State: 9.5 kV |
товару немає в наявності |
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| PEB20256EV2.1-G | Infineon Technologies | Description: MUNICH256 MULTI CHANNEL NETWORK |
на замовлення 432 шт: термін постачання 21-31 дні (днів) |
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CHL8104-09CRT | Infineon Technologies |
Description: IC REG BUCK 40VQFN |
товару немає в наявності |
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| CHL8212-03CRT | Infineon Technologies |
Description: IC REG BUCK 28VQFNPackaging: Tape & Reel (TR) Package / Case: 28-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: 0°C ~ 85°C Output Configuration: Positive Frequency - Switching: 200kHz ~ 1.2MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 3.3V Supplier Device Package: PG-VQFN-28-902 Synchronous Rectifier: No Control Features: Enable Serial Interfaces: I²C Output Phases: 2 Clock Sync: No Part Status: Obsolete Number of Outputs: 3 |
товару немає в наявності |
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TC365DP64F300WAAKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPPackaging: Tape & Reel (TR) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 4MB (4M x 8) RAM Size: 672K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT Peripherals: DMA, I2S, PWM, WDT Supplier Device Package: PG-LQFP-176-22 Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
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TC365DP64F300WAAKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPPackaging: Cut Tape (CT) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 4MB (4M x 8) RAM Size: 672K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT Peripherals: DMA, I2S, PWM, WDT Supplier Device Package: PG-LQFP-176-22 Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
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TC365DP64F300WAALXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPPackaging: Tape & Reel (TR) Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 4MB (4M x 8) RAM Size: 672K x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 3.3V, 5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT Peripherals: DMA, I2S, PWM, WDT Supplier Device Package: PG-LQFP-176-22 DigiKey Programmable: Not Verified |
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| XDPE14284AXUMA1 | Infineon Technologies | Description: IFX PRIMARION CNTRLLER PG-VQFN-4 |
товару немає в наявності |
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KP200XTMA2 | Infineon Technologies |
Description: SENSOR 15.95PSIA DSOF8Packaging: Tape & Reel (TR) Package / Case: 8-SMD Module Output Type: SPI Mounting Type: Surface Mount Operating Pressure: 7.77PSI ~ 15.95PSI (53.6kPa ~ 110kPa) Pressure Type: Absolute Operating Temperature: -40°C ~ 85°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 11V Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
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BBY51-03W | Infineon Technologies |
Description: VARIABLE CAPACITANCE DIODE |
товару немає в наявності |
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BBY 51-02W E6327 | Infineon Technologies |
Description: DIODE TUNING 7V 20MA SCD-80Packaging: Tape & Reel (TR) Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: SCD-80 Voltage - Peak Reverse (Max): 7 V Capacitance Ratio: 2.2 |
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BBY 51-02L E6327 | Infineon Technologies |
Description: DIODE TUNING 7V 20MA TSLP-2Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: PG-TSLP-2-1 Voltage - Peak Reverse (Max): 7 V Capacitance Ratio: 2.2 |
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| ESD18VU1B-02LSE6327 | Infineon Technologies |
Description: TRANS VOLTAGE SUPPRESSOR DIODEPackaging: Bulk Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 85°C (TA) Applications: RF Antenna Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 18.5V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power Line Protection: No |
на замовлення 13300 шт: термін постачання 21-31 дні (днів) |
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FP150R12N3T7PB11BPSA1 | Infineon Technologies |
Description: LOW POWER ECONOPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 12 µA Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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IPT008N06NM5LFATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-HSOF-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 454A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPT008N06NM5LFATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-HSOF-8Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 454A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V |
на замовлення 3281 шт: термін постачання 21-31 дні (днів) |
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| FS03MR12A6MA1B | Infineon Technologies |
Description: HYBRID PACK DRIVE SIC AG-HYBRIDD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DDB6U134N16RRB11BPSA2 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2B-211Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B Part Status: Active Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 400 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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| DF400R12KE3 | Infineon Technologies |
Description: DFXR12H - IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 580 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 2000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 28 nF @ 25 V |
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В кошику од. на суму грн. | |||||||||||||||
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FD300R06KE3HOSA1 | Infineon Technologies |
Description: IGBT MOD 600V 400A 940W |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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FD300R06KE3HOSA1 | Infineon Technologies |
Description: IGBT MOD 600V 400A 940W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FP75R12N3T7B11BPSA1 | Infineon Technologies |
Description: LOW POWER ECONOPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 13 µA Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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BTS70061EPZXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-14Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: High Side Rds On (Typ): 6.6mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 12.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BTS70061EPZXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-14Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: High Side Rds On (Typ): 6.6mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 12.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 3281 шт: термін постачання 21-31 дні (днів) |
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BSC0805LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 79A TDSON-8-6Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 49µA Supplier Device Package: PG-TDSON-8-6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE9250XSJXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGDSO8Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 100 mV Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLE9250XSJXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGDSO8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8 Receiver Hysteresis: 100 mV Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
на замовлення 12095 шт: термін постачання 21-31 дні (днів) |
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STT1400N16P55XPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz Number of SCRs, Diodes: 2 SCRs Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.6 kV |
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В кошику од. на суму грн. | ||||||||||||||
| S71VS064RB0AHT4L3 | Infineon Technologies |
Description: IC FLASH RAM 64MIT PAR 52VFRBGA Packaging: Tape & Reel (TR) Package / Case: 52-VFBGA Mounting Type: Surface Mount Memory Size: 64Mbit (FLASH), 64Mbit (RAM) Memory Type: Non-Volatile, Volatile Operating Temperature: -25°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH, PSRAM Clock Frequency: 108 MHz Memory Format: FLASH, RAM Supplier Device Package: 52-VFRBGA (6x5) Memory Interface: Parallel DigiKey Programmable: Not Verified |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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AIKQ200N75CP2XKSA1 | Infineon Technologies |
Description: IGBT TRENCH 750V 200A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Supplier Device Package: TO-247-3 IGBT Type: Trench Td (on/off) @ 25°C: 89ns/266ns Switching Energy: 15.3mJ (on), 7mJ (off) Gate Charge: 1256 nC Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector Pulsed (Icm): 600 A Power - Max: 576 W |
на замовлення 225 шт: термін постачання 21-31 дні (днів) |
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TLS412533VBOARDTOBO1 | Infineon Technologies |
Description: TLS4125 3.3V BOARDPackaging: Bulk Voltage - Output: 3.3V Voltage - Input: 3.7V ~ 35V Current - Output: 2.5A Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TLS4125D0EPV33 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1, Non-Isolated |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TLS412033VBOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS4120D0EPV33Packaging: Bulk Voltage - Output: 3.3V Voltage - Input: 3.7V ~ 35V Current - Output: 2A Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: TLS4120D0EPV33 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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S29GL512S11TFIV20 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Bulk Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Part Status: Active Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
на замовлення 2730 шт: термін постачання 21-31 дні (днів) |
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IRFS4410PBF-INF | Infineon Technologies |
Description: HEXFET POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAF-XC836T-2FRIAB | Infineon Technologies |
Description: XC800 I-FAMILY MICROCONTROLLER ,Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Connectivity: I2C, SSC, UART/USART Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-1 Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| XC8362FRAABFXUMA1 | Infineon Technologies |
Description: IC MCU Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAT1504WH2110XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 100MW SOT3233Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Max: 110 mA Power Dissipation (Max): 100 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BAT1504WH2110XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 4V 100MW SOT3233Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT323-3 Part Status: Active Current - Max: 110 mA Power Dissipation (Max): 100 mW |
на замовлення 13687 шт: термін постачання 21-31 дні (днів) |
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| 6PS04012E4DG36022NOSA1 | Infineon Technologies |
Description: MODULE IGBTPackaging: Bulk Package / Case: Module Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 85°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A NTC Thermistor: No Part Status: Obsolete Current - Collector (Ic) (Max): 306 A Voltage - Collector Emitter Breakdown (Max): 3600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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F3L75R12W1H3BPSA1 | Infineon Technologies |
Description: LOW POWER EASY AG-EASY1B-311 Packaging: Tray |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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| DF400R07PE4R_B6 | Infineon Technologies |
Description: IGBT MOD 650V 450A 1100WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: NPT Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 1100 W Current - Collector Cutoff (Max): 20 nA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2PS06017E32G28213NOSA1 | Infineon Technologies |
Description: IGBT MODULE 1100VDC 325A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMBG65R163M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.7mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMBG65R163M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.7mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V |
на замовлення 718 шт: термін постачання 21-31 дні (днів) |
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IRFP4110PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V |
на замовлення 133 шт: термін постачання 21-31 дні (днів) |
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IRFP4468PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 290A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 19860 pF @ 50 V |
на замовлення 457 шт: термін постачання 21-31 дні (днів) |
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IRFP4668PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V Power Dissipation (Max): 520W Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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IRFP4568PBFXKMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V |
на замовлення 323 шт: термін постачання 21-31 дні (днів) |
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| TD61N12KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 120A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 60 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 120 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
TT240N34KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 3.4KV 700A MODULE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MB9BF429SAPMC-GK7E2 | Infineon Technologies | Description: IC MCU 32B 1.5625MB FLSH 144LQFP |
товару немає в наявності |
В кошику од. на суму грн. |
| SAK-TC297TC-96F300S BB |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Obsolete
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Obsolete
Number of I/O: 169
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| SAK-TC297TP-96F300N BC |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TC297TP96F300SBBKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| TC377TP96F300SAALXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IGP01N120H2XKSA1036 |
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Виробник: Infineon Technologies
Description: IGP01N120 - DISCRETE IGBT WITHOU
Description: IGP01N120 - DISCRETE IGBT WITHOU
товару немає в наявності
В кошику
од. на суму грн.
| DD500S33HE3BPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MOD GP 3300V AGIHVB130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
Description: DIODE MOD GP 3300V AGIHVB130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
на замовлення 88 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 80933.99 грн |
| CY8C4025LQI-S402 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 153.74 грн |
| 10+ | 110.29 грн |
| 25+ | 100.74 грн |
| 80+ | 86.04 грн |
| 230+ | 81.97 грн |
| CY8C4025AZI-S403 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 439 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 202.25 грн |
| 10+ | 144.80 грн |
| 25+ | 132.31 грн |
| 80+ | 113.08 грн |
| 250+ | 105.21 грн |
| TLE9012DQUDTRBMS2TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE9012DQU
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: TLE9012DQU
Supplied Contents: Board(s), Cable(s)
Primary Attributes: 4.75V ~ 60V Supply
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Description: EVAL BOARD FOR TLE9012DQU
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Contents: Board(s), Cable(s)
Utilized IC / Part: TLE9012DQU
Supplied Contents: Board(s), Cable(s)
Primary Attributes: 4.75V ~ 60V Supply
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
Part Status: Active
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 17911.70 грн |
| 10+ | 17209.27 грн |
| T600N95TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 9.5KV 930A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 830 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 930 A
Voltage - Off State: 9.5 kV
Description: SCR MODULE 9.5KV 930A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12800A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 830 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 930 A
Voltage - Off State: 9.5 kV
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| PEB20256EV2.1-G |
Виробник: Infineon Technologies
Description: MUNICH256 MULTI CHANNEL NETWORK
Description: MUNICH256 MULTI CHANNEL NETWORK
на замовлення 432 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 10933.98 грн |
| CHL8104-09CRT |
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Виробник: Infineon Technologies
Description: IC REG BUCK 40VQFN
Description: IC REG BUCK 40VQFN
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| CHL8212-03CRT |
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Виробник: Infineon Technologies
Description: IC REG BUCK 28VQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-28-902
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I²C
Output Phases: 2
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
Description: IC REG BUCK 28VQFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-28-902
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I²C
Output Phases: 2
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 3
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| TC365DP64F300WAAKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
DigiKey Programmable: Not Verified
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| TC365DP64F300WAAKXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
DigiKey Programmable: Not Verified
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| TC365DP64F300WAALXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-176-22
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-176-22
DigiKey Programmable: Not Verified
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| XDPE14284AXUMA1 |
Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
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| KP200XTMA2 |
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Виробник: Infineon Technologies
Description: SENSOR 15.95PSIA DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SPI
Mounting Type: Surface Mount
Operating Pressure: 7.77PSI ~ 15.95PSI (53.6kPa ~ 110kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR 15.95PSIA DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SPI
Mounting Type: Surface Mount
Operating Pressure: 7.77PSI ~ 15.95PSI (53.6kPa ~ 110kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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| BBY51-03W |
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Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Description: VARIABLE CAPACITANCE DIODE
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| BBY 51-02W E6327 |
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Виробник: Infineon Technologies
Description: DIODE TUNING 7V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
Description: DIODE TUNING 7V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
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| BBY 51-02L E6327 |
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Виробник: Infineon Technologies
Description: DIODE TUNING 7V 20MA TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-TSLP-2-1
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
Description: DIODE TUNING 7V 20MA TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-TSLP-2-1
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
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| ESD18VU1B-02LSE6327 |
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Виробник: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power Line Protection: No
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Packaging: Bulk
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power Line Protection: No
на замовлення 13300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5189+ | 4.93 грн |
| FP150R12N3T7PB11BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 15750.23 грн |
| IPT008N06NM5LFATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 223.15 грн |
| IPT008N06NM5LFATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 454A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 150A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 30 V
на замовлення 3281 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 531.94 грн |
| 10+ | 346.77 грн |
| 100+ | 263.56 грн |
| FS03MR12A6MA1B |
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Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
Description: HYBRID PACK DRIVE SIC AG-HYBRIDD
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| DDB6U134N16RRB11BPSA2 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Description: LOW POWER ECONO AG-ECONO2B-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5288.99 грн |
| DF400R12KE3 |
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Виробник: Infineon Technologies
Description: DFXR12H - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Description: DFXR12H - IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
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| FD300R06KE3HOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 600V 400A 940W
Description: IGBT MOD 600V 400A 940W
на замовлення 35 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 8048.80 грн |
| FD300R06KE3HOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 600V 400A 940W
Description: IGBT MOD 600V 400A 940W
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| FP75R12N3T7B11BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 8076.96 грн |
| BTS70061EPZXUMA1 |
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Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6.6mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6.6mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 73.19 грн |
| BTS70061EPZXUMA1 |
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Виробник: Infineon Technologies
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6.6mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: PROFET PG-TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6.6mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3281 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 144.70 грн |
| 10+ | 102.45 грн |
| 25+ | 93.39 грн |
| 100+ | 78.27 грн |
| 250+ | 73.79 грн |
| 500+ | 71.10 грн |
| 1000+ | 67.75 грн |
| BSC0805LSATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 79A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: MOSFET N-CH 100V 79A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
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| TLE9250XSJXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 56.56 грн |
| 5000+ | 53.25 грн |
| 7500+ | 52.64 грн |
| TLE9250XSJXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 100 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
на замовлення 12095 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 113.46 грн |
| 10+ | 79.96 грн |
| 25+ | 72.58 грн |
| 100+ | 60.58 грн |
| 250+ | 56.96 грн |
| 500+ | 54.79 грн |
| 1000+ | 52.13 грн |
| STT1400N16P55XPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
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| S71VS064RB0AHT4L3 |
Виробник: Infineon Technologies
Description: IC FLASH RAM 64MIT PAR 52VFRBGA
Packaging: Tape & Reel (TR)
Package / Case: 52-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, PSRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 52-VFRBGA (6x5)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
Description: IC FLASH RAM 64MIT PAR 52VFRBGA
Packaging: Tape & Reel (TR)
Package / Case: 52-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH, PSRAM
Clock Frequency: 108 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 52-VFRBGA (6x5)
Memory Interface: Parallel
DigiKey Programmable: Not Verified
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 245.31 грн |
| AIKQ200N75CP2XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 750V 200A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 89ns/266ns
Switching Energy: 15.3mJ (on), 7mJ (off)
Gate Charge: 1256 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 576 W
Description: IGBT TRENCH 750V 200A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 89ns/266ns
Switching Energy: 15.3mJ (on), 7mJ (off)
Gate Charge: 1256 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 576 W
на замовлення 225 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1093.48 грн |
| 30+ | 645.51 грн |
| 120+ | 556.31 грн |
| TLS412533VBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: TLS4125 3.3V BOARD
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125D0EPV33
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Description: TLS4125 3.3V BOARD
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2.5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4125D0EPV33
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4061.50 грн |
| TLS412033VBOARDTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV33
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3.7V ~ 35V
Current - Output: 2A
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: TLS4120D0EPV33
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4428.18 грн |
| S29GL512S11TFIV20 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
на замовлення 2730 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 693.09 грн |
| IRFS4410PBF-INF |
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Виробник: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
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| SAF-XC836T-2FRIAB |
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Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
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| BAT1504WH2110XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 13.67 грн |
| BAT1504WH2110XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Description: DIODE SCHOTTKY 4V 100MW SOT3233
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Resistance @ If, F: 5.8Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT323-3
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 13687 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.35 грн |
| 14+ | 24.15 грн |
| 25+ | 21.63 грн |
| 100+ | 17.64 грн |
| 250+ | 16.37 грн |
| 500+ | 15.61 грн |
| 1000+ | 14.73 грн |
| 6PS04012E4DG36022NOSA1 |
![]() |
Виробник: Infineon Technologies
Description: MODULE IGBT
Packaging: Bulk
Package / Case: Module
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 85°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 306 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
Description: MODULE IGBT
Packaging: Bulk
Package / Case: Module
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 85°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 200A
NTC Thermistor: No
Part Status: Obsolete
Current - Collector (Ic) (Max): 306 A
Voltage - Collector Emitter Breakdown (Max): 3600 V
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| F3L75R12W1H3BPSA1 |
на замовлення 24 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5191.98 грн |
| 24+ | 3797.63 грн |
| DF400R07PE4R_B6 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 450A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 20 nA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Description: IGBT MOD 650V 450A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 400A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 20 nA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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| 2PS06017E32G28213NOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1100VDC 325A
Description: IGBT MODULE 1100VDC 325A
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| IMBG65R163M1HXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
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| IMBG65R163M1HXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 217mOhm @ 5.7A, 18V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 400 V
на замовлення 718 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 419.30 грн |
| 10+ | 269.10 грн |
| 100+ | 192.92 грн |
| 500+ | 150.55 грн |
| IRFP4110PBFXKMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 282.00 грн |
| 25+ | 153.78 грн |
| 100+ | 125.65 грн |
| IRFP4468PBFXKMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19860 pF @ 50 V
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 180A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19860 pF @ 50 V
на замовлення 457 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 397.11 грн |
| 25+ | 223.39 грн |
| 100+ | 184.95 грн |
| IRFP4668PBFXKMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
Power Dissipation (Max): 520W
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
Power Dissipation (Max): 520W
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 371.62 грн |
| IRFP4568PBFXKMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Description: TRENCH >=100V PG-TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
на замовлення 323 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 379.02 грн |
| 25+ | 264.88 грн |
| 100+ | 236.94 грн |
| TD61N12KOFHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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| TT240N34KOFHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 3.4KV 700A MODULE
Description: SCR MODULE 3.4KV 700A MODULE
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| MB9BF429SAPMC-GK7E2 |
Виробник: Infineon Technologies
Description: IC MCU 32B 1.5625MB FLSH 144LQFP
Description: IC MCU 32B 1.5625MB FLSH 144LQFP
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од. на суму грн.


































