Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126731) > Сторінка 473 з 2113
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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D1800N44TVFXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 4400V 1800A |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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D1800N44TVFXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 4400V 1800A |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | ||||||||||||||
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D690S20TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2KV 690APackaging: Bulk Package / Case: DO-200AB, B-PUK Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 9 µs Technology: Standard Current - Average Rectified (Io): 690A Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 3000 A Current - Reverse Leakage @ Vr: 25 mA @ 2000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLS850C2TEV33BOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS850C2TEV33Packaging: Bulk Voltage - Output: 3.3V Voltage - Input: 3V ~ 40V Current - Output: 500mA Regulator Type: Positive Fixed Board Type: Fully Populated Utilized IC / Part: TLS850C2TEV33 Supplied Contents: Board(s) Channels per IC: 1 - Single Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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AUIRG4BC30SSTRL | Infineon Technologies |
Description: IGBT 600V 34A 100W D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Part Status: Active Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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IPW50R280CE | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETGate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 13V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 3.5V @ 350µA Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V |
на замовлення 101641 шт: термін постачання 21-31 дні (днів) |
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IPW90R1K2C3FKSA1 | Infineon Technologies |
Description: IPW90R1 - 900V COOLMOS N-CHANNEL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMBG65R260M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.1mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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IMBG65R260M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263-Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.1mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V |
на замовлення 907 шт: термін постачання 21-31 дні (днів) |
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BAT60BE6359HTMA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 10V 3A PGSOD3232Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 25pF @ 5V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 25 µA @ 8 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FS15R06XL4BOMA1 | Infineon Technologies |
Description: IGBT MODULE 600V 20A 81W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 81 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 675 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 2SC0108T2H017HPSA1 | Infineon Technologies |
Description: MODULE GATE DRIVER Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KP276C1505XTMA1 | Infineon Technologies |
Description: INTEGRATED PRESSURE SENS |
на замовлення 1389 шт: термін постачання 21-31 дні (днів) |
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KP276D1505XTMA1 | Infineon Technologies |
Description: SENSOR 4.35PSIA 12BIT DSOF8Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: 8-SMD Module Output Type: SENT Mounting Type: Surface Mount Output: 12 b Operating Pressure: 1.45 ~ 4.35PSI (10kPa ~ 30kPa) Pressure Type: Absolute Accuracy: ±1.03% Operating Temperature: -40°C ~ 150°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: PG-DSOF-8-162 Port Style: No Port Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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BCR35PNH6327XTSA1 | Infineon Technologies |
Description: TRANS PREBIAS NPN/PNP 50V SOT363Current - Collector (Ic) (Max): 100mA Part Status: Last Time Buy Supplier Device Package: PG-SOT363-PO Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 10kOhms Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Power - Max: 250mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Bulk |
на замовлення 291000 шт: термін постачання 21-31 дні (днів) |
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SAK-XE161FU8F40VAAKXUMA1 | Infineon Technologies |
Description: 16 BIT FLASH RISC MICROCONTROLLE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAK-XC2723X-20F66VAA | Infineon Technologies |
Description: 16-BIT C166 MICROCONTROLLER - XC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAK-XE161FL-20F66VAA | Infineon Technologies |
Description: XE161 - 16-BIT FLASH RISC MICROC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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XMC1403Q048X0064AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-48-73 Part Status: Active Number of I/O: 34 DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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XMC1403Q048X0064AAXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-48-73 Part Status: Active Number of I/O: 34 DigiKey Programmable: Not Verified |
на замовлення 4839 шт: термін постачання 21-31 дні (днів) |
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| TLE9879QXW40XUMA2 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: DMA, LIN, SPI, SSC, UART RAM Size: 6K x 8 Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 5.5V ~ 28V Controller Series: TLE987x Program Memory Type: FLASH (128kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: PG-VQFN-48-29 Grade: Automotive Number of I/O: 10 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| TLE9879QXW40XUMA2 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: DMA, LIN, SPI, SSC, UART RAM Size: 6K x 8 Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 5.5V ~ 28V Controller Series: TLE987x Program Memory Type: FLASH (128kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: PG-VQFN-48-29 Grade: Automotive Number of I/O: 10 DigiKey Programmable: Not Verified |
на замовлення 2357 шт: термін постачання 21-31 дні (днів) |
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TLE9877QXW40XUMA2 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: DMA, LIN, SPI, SSC, UART RAM Size: 6K x 8 Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 5.5V ~ 28V Controller Series: TLE987x Program Memory Type: FLASH (64kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: PG-VQFN-48-29 Grade: Automotive Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9877QXW40XUMA2 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: DMA, LIN, SPI, SSC, UART RAM Size: 6K x 8 Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 5.5V ~ 28V Controller Series: TLE987x Program Memory Type: FLASH (64kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: PG-VQFN-48-29 Grade: Automotive Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified |
на замовлення 4797 шт: термін постачання 21-31 дні (днів) |
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TLE9877QXA40XUMA3 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: DMA, LIN, SPI, SSC, UART RAM Size: 6K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 28V Controller Series: TLE987x Program Memory Type: FLASH (64kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE9877QXA40XUMA3 | Infineon Technologies |
Description: IC SOC MOTOR DRIVER 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: DMA, LIN, SPI, SSC, UART RAM Size: 6K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5.5V ~ 28V Controller Series: TLE987x Program Memory Type: FLASH (64kB) Core Processor: ARM® Cortex®-M3 Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 3693 шт: термін постачання 21-31 дні (днів) |
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IPI120N06S4H1AKSA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO262-3Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 4V @ 200µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IAUA200N04S5N010ATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Obsolete Supplier Device Package: PG-HSOF-5-1 Vgs(th) (Max) @ Id: 3.4V @ 100µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 5-PowerSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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BSC200P03LSG | Infineon Technologies |
Description: P-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 1V @ 100µA Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
на замовлення 13641 шт: термін постачання 21-31 дні (днів) |
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ISC012N04NM6ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V PG-TDSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 747µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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ISC012N04NM6ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V PG-TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 747µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V |
на замовлення 11160 шт: термін постачання 21-31 дні (днів) |
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IPD30N06S223ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 30A TO252-31Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IPD30N06S223ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 30A TO252-31Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1971 шт: термін постачання 21-31 дні (днів) |
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BTS244ZE3043 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220-5 Vgs(th) (Max) @ Id: 2V @ 130µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Packaging: Bulk |
на замовлення 4726 шт: термін постачання 21-31 дні (днів) |
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| BTS244Z | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPart Status: Obsolete Packaging: Bulk |
на замовлення 3447 шт: термін постачання 21-31 дні (днів) |
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| BTS244ZAKSA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO263-5-2 Vgs(th) (Max) @ Id: 2V @ 130µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CYW4329EKUBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 182WLBGADigiKey Programmable: Not Verified Serial Interfaces: I2C, I2S, JTAG, SPI, UART RF Family/Standard: Bluetooth, WiFi Modulation: 8DPSK, DQPSK, GFSK GPIO: 9 Supplier Device Package: 182-WLBGA (6.57x5.62) Data Rate (Max): 72.2Mbps Power - Output: 11dBm Voltage - Supply: 1.8V ~ 3.3V Operating Temperature: -30°C ~ 85°C Type: TxRx + MCU Frequency: 2.4GHz, 5GHz Mounting Type: Surface Mount Sensitivity: -91dBm Package / Case: 182-UFBGA, WLBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLE75602ESHXUMA1 | Infineon Technologies |
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side or Low Side Rds On (Typ): 1Ohm Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 330mA Ratio - Input:Output: 1:8 Supplier Device Package: PG-TSDSO-24-21 Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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TLE75602ESHXUMA1 | Infineon Technologies |
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side or Low Side Rds On (Typ): 1Ohm Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 330mA Ratio - Input:Output: 1:8 Supplier Device Package: PG-TSDSO-24-21 Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 6211 шт: термін постачання 21-31 дні (днів) |
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TLE72722DATMA1 | Infineon Technologies |
Description: IC REG LIN 5V 300MA PG-TO252-5Current - Supply (Max): 40 µA Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 0.5V @ 200mA PSRR: 60dB (100Hz) Qualification: AEC-Q100 Grade: Automotive Control Features: Enable, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-TO252-5 Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 30 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 300mA Part Status: Active Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE72722DATMA1 | Infineon Technologies |
Description: IC REG LIN 5V 300MA PG-TO252-5Current - Supply (Max): 40 µA Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 0.5V @ 200mA PSRR: 60dB (100Hz) Part Status: Active Control Features: Enable, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-TO252-5 Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 30 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
на замовлення 1851 шт: термін постачання 21-31 дні (днів) |
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IGB20N65S5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 40A TO263-3Packaging: Tape & Reel (TR) Part Status: Active Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/115ns Switching Energy: 360µJ (on), 150µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 48 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 125 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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IGB20N65S5ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 40A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/115ns Switching Energy: 360µJ (on), 150µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 125 W |
на замовлення 364 шт: термін постачання 21-31 дні (днів) |
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BC 847BT E6327 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A PG-SC75-3DPackaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SC75-3D Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 330 mW |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||
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CY7B923-JC | Infineon Technologies |
Description: TRANSMITTER HOTLINK 28-PLCC |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
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ICLS6023J | Infineon Technologies |
Description: IC LED DVR OFLN SWITCHER PGDIP86Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Outputs: 1 Frequency: 67kHz Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 150°C (TJ) Applications: LED Lighting Internal Switch(s): Yes Topology: Flyback Supplier Device Package: PG-DIP-8-6 Dimming: PWM Voltage - Supply (Min): 10.3V Voltage - Supply (Max): 26V Part Status: Active |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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| IPP013N06NF2SAKMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRF6617TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A DIRECTFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKA10N60T | Infineon Technologies |
Description: IKA10N60 - DISCRETE IGBT WITH ANPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Supplier Device Package: PG-TO220-3-31 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/215ns Switching Energy: 160µJ (on), 270µJ (off) Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 62 nC Part Status: Active Current - Collector (Ic) (Max): 11.7 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 30 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF7702TRPBF | Infineon Technologies |
Description: MOSFET P-CH 12V 8A 8TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TDA386400200AUMA1 | Infineon Technologies |
Description: IC REG BUCK PROG 40A IQFN-36 Part Status: Active Voltage - Output (Min/Fixed): 0.25V Voltage - Input (Min): 3V Voltage - Output (Max): 3.04V Synchronous Rectifier: Yes Supplier Device Package: PG-IQFN-36-3 Topology: Buck Voltage - Input (Max): 17V Frequency - Switching: 400kHz ~ 2MHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 40A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Package / Case: 36-PowerVFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IQE065N10NM5CGATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TTFN-9Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 48µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IQE065N10NM5CGATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TTFN-9Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 48µA Supplier Device Package: PG-TTFN-9-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
на замовлення 9915 шт: термін постачання 21-31 дні (днів) |
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FZ800R16KF4NOSA1 | Infineon Technologies |
Description: IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 800A NTC Thermistor: No Part Status: Active Current - Collector (Ic) (Max): 800 A Voltage - Collector Emitter Breakdown (Max): 1600 V Power - Max: 6250 W Current - Collector Cutoff (Max): 6 mA Input Capacitance (Cies) @ Vce: 130 nF @ 25 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| IRF8910TRPBF-1 | Infineon Technologies |
Description: MOSFET 2N-CH 20V 10A 8SO Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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T4003NH52TOHMOLIXPSA1 | Infineon Technologies |
Description: SCR 5.2KV 5340A T17240L-1Packaging: Tray Package / Case: TO-200AF Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: 120°C (TJ) Current - Hold (Ih) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 105000A @ 50Hz Current - On State (It (AV)) (Max): 4990 A Voltage - On State (Vtm) (Max): 1.8 V Supplier Device Package: BG-T17240L-1 Current - On State (It (RMS)) (Max): 5340 A Voltage - Off State: 5.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGD06N65T6ARMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 9A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/35ns Switching Energy: 60µJ (on), 30µJ (off) Test Condition: 400V, 3A, 47Ohm, 15V Gate Charge: 13.7 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 9 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 18 A Power - Max: 31 W |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| SAF-XE162FL-12F80L AA | Infineon Technologies |
Description: 16-BIT FLASH RISC MCUPackaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 96KB (96K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 19x12b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-22 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SAF-XE162FL-12F80LAA | Infineon Technologies |
Description: 16-BIT FLASH RISC MCUPackaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 96KB (96K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 19x12b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-22 Part Status: Active Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCP49 | Infineon Technologies |
Description: BIPOLAR DARLINGTON TRANSISTORPackaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
на замовлення 31000 шт: термін постачання 21-31 дні (днів) |
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| D1800N44TVFXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 4400V 1800A
Description: DIODE GEN PURP 4400V 1800A
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 32916.85 грн |
| D1800N44TVFXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 4400V 1800A
Description: DIODE GEN PURP 4400V 1800A
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.
| D690S20TXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 2KV 690A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 µs
Technology: Standard
Current - Average Rectified (Io): 690A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 25 mA @ 2000 V
Description: DIODE GEN PURP 2KV 690A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 µs
Technology: Standard
Current - Average Rectified (Io): 690A
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 25 mA @ 2000 V
товару немає в наявності
В кошику
од. на суму грн.
| TLS850C2TEV33BOARDTOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS850C2TEV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
Description: EVAL BOARD FOR TLS850C2TEV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 500mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS850C2TEV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4177.94 грн |
| AUIRG4BC30SSTRL |
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Виробник: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IPW50R280CE |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
на замовлення 101641 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 392+ | 57.79 грн |
| IPW90R1K2C3FKSA1 |
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Виробник: Infineon Technologies
Description: IPW90R1 - 900V COOLMOS N-CHANNEL
Description: IPW90R1 - 900V COOLMOS N-CHANNEL
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| IMBG65R260M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
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Мінімальне замовлення: 1000 шт
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| IMBG65R260M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 346mOhm @ 3.6A, 18V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 201 pF @ 400 V
на замовлення 907 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 354.44 грн |
| 10+ | 226.01 грн |
| 50+ | 176.50 грн |
| 100+ | 150.69 грн |
| 500+ | 132.01 грн |
| BAT60BE6359HTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
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| FS15R06XL4BOMA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 20A 81W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 675 pF @ 25 V
Description: IGBT MODULE 600V 20A 81W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 81 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 675 pF @ 25 V
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| KP276C1505XTMA1 |
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Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Description: INTEGRATED PRESSURE SENS
на замовлення 1389 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 87+ | 286.76 грн |
| KP276D1505XTMA1 |
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Виробник: Infineon Technologies
Description: SENSOR 4.35PSIA 12BIT DSOF8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 4.35PSI (10kPa ~ 30kPa)
Pressure Type: Absolute
Accuracy: ±1.03%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR 4.35PSIA 12BIT DSOF8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 4.35PSI (10kPa ~ 30kPa)
Pressure Type: Absolute
Accuracy: ±1.03%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| BCR35PNH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN/PNP 50V SOT363
Current - Collector (Ic) (Max): 100mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT363-PO
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Power - Max: 250mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Description: TRANS PREBIAS NPN/PNP 50V SOT363
Current - Collector (Ic) (Max): 100mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT363-PO
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Power - Max: 250mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
на замовлення 291000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4116+ | 5.19 грн |
| SAK-XE161FU8F40VAAKXUMA1 |
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Виробник: Infineon Technologies
Description: 16 BIT FLASH RISC MICROCONTROLLE
Description: 16 BIT FLASH RISC MICROCONTROLLE
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| SAK-XC2723X-20F66VAA |
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Виробник: Infineon Technologies
Description: 16-BIT C166 MICROCONTROLLER - XC
Description: 16-BIT C166 MICROCONTROLLER - XC
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| SAK-XE161FL-20F66VAA |
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Виробник: Infineon Technologies
Description: XE161 - 16-BIT FLASH RISC MICROC
Description: XE161 - 16-BIT FLASH RISC MICROC
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| XMC1403Q048X0064AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 113.10 грн |
| XMC1403Q048X0064AAXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 4839 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 213.30 грн |
| 10+ | 153.55 грн |
| 25+ | 140.71 грн |
| 100+ | 118.79 грн |
| 250+ | 112.47 грн |
| 500+ | 108.66 грн |
| 1000+ | 103.79 грн |
| TLE9879QXW40XUMA2 |
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Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE9879QXW40XUMA2 |
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Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 2357 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 295.76 грн |
| 10+ | 284.66 грн |
| TLE9877QXW40XUMA2 |
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Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 215.18 грн |
| TLE9877QXW40XUMA2 |
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Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
на замовлення 4797 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 237.88 грн |
| 10+ | 228.15 грн |
| TLE9877QXA40XUMA3 |
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Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE9877QXA40XUMA3 |
![]() |
Виробник: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DMA, LIN, SPI, SSC, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Controller Series: TLE987x
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3693 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 466.24 грн |
| 10+ | 343.91 грн |
| 50+ | 301.87 грн |
| 100+ | 271.07 грн |
| 500+ | 236.21 грн |
| IPI120N06S4H1AKSA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 60V 120A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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| IAUA200N04S5N010ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Obsolete
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET_(20V 40V)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Obsolete
Supplier Device Package: PG-HSOF-5-1
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-PowerSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| BSC200P03LSG |
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Виробник: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 1V @ 100µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Description: P-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 1V @ 100µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 12.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
на замовлення 13641 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 751+ | 31.72 грн |
| ISC012N04NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 47.67 грн |
| 10000+ | 44.09 грн |
| ISC012N04NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
Description: TRENCH <= 40V PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 232A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 747µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
на замовлення 11160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.65 грн |
| 10+ | 107.66 грн |
| 100+ | 73.45 грн |
| 500+ | 55.21 грн |
| 1000+ | 50.80 грн |
| 2000+ | 50.64 грн |
| IPD30N06S223ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 2500 шт
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| IPD30N06S223ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1971 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.73 грн |
| 10+ | 73.00 грн |
| 100+ | 48.94 грн |
| 500+ | 36.26 грн |
| 1000+ | 33.15 грн |
| BTS244ZE3043 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220-5
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5
Packaging: Bulk
на замовлення 4726 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 104+ | 208.92 грн |
| BTS244Z |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Obsolete
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Part Status: Obsolete
Packaging: Bulk
на замовлення 3447 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 181+ | 131.63 грн |
| BTS244ZAKSA1 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-5-2
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Packaging: Bulk
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| CYW4329EKUBGT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 182WLBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 8DPSK, DQPSK, GFSK
GPIO: 9
Supplier Device Package: 182-WLBGA (6.57x5.62)
Data Rate (Max): 72.2Mbps
Power - Output: 11dBm
Voltage - Supply: 1.8V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz, 5GHz
Mounting Type: Surface Mount
Sensitivity: -91dBm
Package / Case: 182-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
Description: IC RF TXRX+MCU BLE 182WLBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 8DPSK, DQPSK, GFSK
GPIO: 9
Supplier Device Package: 182-WLBGA (6.57x5.62)
Data Rate (Max): 72.2Mbps
Power - Output: 11dBm
Voltage - Supply: 1.8V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz, 5GHz
Mounting Type: Surface Mount
Sensitivity: -91dBm
Package / Case: 182-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
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| TLE75602ESHXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 75.71 грн |
| 6000+ | 71.44 грн |
| TLE75602ESHXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR DRVR N-CHAN 1:8 TSDSO-24
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side or Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 6211 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.28 грн |
| 10+ | 105.68 грн |
| 25+ | 96.42 грн |
| 100+ | 80.87 грн |
| 250+ | 76.27 грн |
| 500+ | 73.85 грн |
| TLE72722DATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Qualification: AEC-Q100
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Part Status: Active
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Qualification: AEC-Q100
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Part Status: Active
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| TLE72722DATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC REG LIN 5V 300MA PG-TO252-5
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
на замовлення 1851 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 175.24 грн |
| 10+ | 125.45 грн |
| 25+ | 114.66 грн |
| 100+ | 96.47 грн |
| 250+ | 91.16 грн |
| 500+ | 87.96 грн |
| 1000+ | 83.92 грн |
| IGB20N65S5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 40A TO263-3
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/115ns
Switching Energy: 360µJ (on), 150µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 125 W
Description: IGBT TRENCH FS 650V 40A TO263-3
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/115ns
Switching Energy: 360µJ (on), 150µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 125 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| IGB20N65S5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/115ns
Switching Energy: 360µJ (on), 150µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 125 W
Description: IGBT TRENCH FS 650V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/115ns
Switching Energy: 360µJ (on), 150µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 125 W
на замовлення 364 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.89 грн |
| 10+ | 104.53 грн |
| 100+ | 71.18 грн |
| BC 847BT E6327 |
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Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SC75-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Description: TRANS NPN 45V 0.1A PG-SC75-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
товару немає в наявності
Мінімальне замовлення: 15000 шт
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| CY7B923-JC |
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Виробник: Infineon Technologies
Description: TRANSMITTER HOTLINK 28-PLCC
Description: TRANSMITTER HOTLINK 28-PLCC
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 2864.85 грн |
| ICLS6023J |
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Виробник: Infineon Technologies
Description: IC LED DVR OFLN SWITCHER PGDIP86
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 67kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DIP-8-6
Dimming: PWM
Voltage - Supply (Min): 10.3V
Voltage - Supply (Max): 26V
Part Status: Active
Description: IC LED DVR OFLN SWITCHER PGDIP86
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Outputs: 1
Frequency: 67kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: LED Lighting
Internal Switch(s): Yes
Topology: Flyback
Supplier Device Package: PG-DIP-8-6
Dimming: PWM
Voltage - Supply (Min): 10.3V
Voltage - Supply (Max): 26V
Part Status: Active
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 218+ | 95.68 грн |
| IRF6617TR1PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A DIRECTFET
Description: MOSFET N-CH 30V 14A DIRECTFET
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| IKA10N60T |
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Виробник: Infineon Technologies
Description: IKA10N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 160µJ (on), 270µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 30 W
Description: IKA10N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/215ns
Switching Energy: 160µJ (on), 270µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 30 W
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| IRF7702TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 8A 8TSSOP
Description: MOSFET P-CH 12V 8A 8TSSOP
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| TDA386400200AUMA1 |
Виробник: Infineon Technologies
Description: IC REG BUCK PROG 40A IQFN-36
Part Status: Active
Voltage - Output (Min/Fixed): 0.25V
Voltage - Input (Min): 3V
Voltage - Output (Max): 3.04V
Synchronous Rectifier: Yes
Supplier Device Package: PG-IQFN-36-3
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 400kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 40A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 36-PowerVFQFN
Packaging: Tape & Reel (TR)
Description: IC REG BUCK PROG 40A IQFN-36
Part Status: Active
Voltage - Output (Min/Fixed): 0.25V
Voltage - Input (Min): 3V
Voltage - Output (Max): 3.04V
Synchronous Rectifier: Yes
Supplier Device Package: PG-IQFN-36-3
Topology: Buck
Voltage - Input (Max): 17V
Frequency - Switching: 400kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 40A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 36-PowerVFQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| IQE065N10NM5CGATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Description: TRENCH >=100V PG-TTFN-9
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
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Мінімальне замовлення: 5000 шт
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| IQE065N10NM5CGATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Description: TRENCH >=100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
на замовлення 9915 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.95 грн |
| 10+ | 144.01 грн |
| 100+ | 99.72 грн |
| 500+ | 75.84 грн |
| 1000+ | 70.14 грн |
| 2000+ | 66.45 грн |
| FZ800R16KF4NOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 800A
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 800A
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 800 A
Voltage - Collector Emitter Breakdown (Max): 1600 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 69982.31 грн |
| IRF8910TRPBF-1 |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 10A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 20V 10A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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| T4003NH52TOHMOLIXPSA1 |
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Виробник: Infineon Technologies
Description: SCR 5.2KV 5340A T17240L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 105000A @ 50Hz
Current - On State (It (AV)) (Max): 4990 A
Voltage - On State (Vtm) (Max): 1.8 V
Supplier Device Package: BG-T17240L-1
Current - On State (It (RMS)) (Max): 5340 A
Voltage - Off State: 5.2 kV
Description: SCR 5.2KV 5340A T17240L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 105000A @ 50Hz
Current - On State (It (AV)) (Max): 4990 A
Voltage - On State (Vtm) (Max): 1.8 V
Supplier Device Package: BG-T17240L-1
Current - On State (It (RMS)) (Max): 5340 A
Voltage - Off State: 5.2 kV
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| IGD06N65T6ARMA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/35ns
Switching Energy: 60µJ (on), 30µJ (off)
Test Condition: 400V, 3A, 47Ohm, 15V
Gate Charge: 13.7 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 31 W
Description: IGBT TRENCH FS 650V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/35ns
Switching Energy: 60µJ (on), 30µJ (off)
Test Condition: 400V, 3A, 47Ohm, 15V
Gate Charge: 13.7 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 31 W
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SAF-XE162FL-12F80L AA |
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Виробник: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x12b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x12b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| SAF-XE162FL-12F80LAA |
![]() |
Виробник: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x12b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x12b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| BCP49 |
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Виробник: Infineon Technologies
Description: BIPOLAR DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Description: BIPOLAR DARLINGTON TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
на замовлення 31000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2308+ | 10.31 грн |









































