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IMC101TT038XUMA1 IMC101TT038XUMA1 Infineon Technologies Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: IC MOTOR DRIVER 3V-5.5V TSSOP-38
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
товару немає в наявності
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IMC101TT038XUMA1 IMC101TT038XUMA1 Infineon Technologies Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: IC MOTOR DRIVER 3V-5.5V TSSOP-38
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
1+361.08 грн
10+229.70 грн
100+162.51 грн
500+125.61 грн
1000+116.96 грн
В кошику  од. на суму  грн.
BAS70-07E6327 BAS70-07E6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT143-4
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товару немає в наявності
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BAS70-07WE6327 BAS70-07WE6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT343-4-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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TLE5309EVALKITTOBO1 TLE5309EVALKITTOBO1 Infineon Technologies Infineon-TLE5x09A16(D)-Eval_Kit-UserManual-v01_00-EN.pdf?fileId=5546d46274b9648d0174baccfbbe52b4 Description: TLE5309 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Contents: Board(s)
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, GMR (Giant Magnetoresistive)
Utilized IC / Part: TLE5309, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+4243.52 грн
В кошику  од. на суму  грн.
IPD70N12S311ATMA1 IPD70N12S311ATMA1 Infineon Technologies Infineon-IPD70N12S3-11-DS-v01_00-EN.pdf?fileId=5546d4625c54d85b015c59bb04e36ce6 Description: MOSFET N-CH 120V 70A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+62.45 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD70N12S311ATMA1 IPD70N12S311ATMA1 Infineon Technologies Infineon-IPD70N12S3-11-DS-v01_00-EN.pdf?fileId=5546d4625c54d85b015c59bb04e36ce6 Description: MOSFET N-CH 120V 70A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3531 шт:
термін постачання 21-31 дні (днів)
2+208.64 грн
10+130.06 грн
100+89.57 грн
500+69.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD50N08S413ATMA1 IPD50N08S413ATMA1 Infineon Technologies PdfFile_624492.pdf Description: MOSFET N-CH 80V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 50A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD50N08S413ATMA1 IPD50N08S413ATMA1 Infineon Technologies PdfFile_624492.pdf Description: MOSFET N-CH 80V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 50A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 736 шт:
термін постачання 21-31 дні (днів)
3+123.48 грн
10+75.69 грн
100+50.70 грн
500+37.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD50N04S4-08 IPD50N04S4-08 Infineon Technologies INFNS15018-1.pdf?t.download=true&u=5oefqw Description: IPD50N04 - 20V-40V N-CHANNEL AUT
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IPD50N12S3L15ATMA1 IPD50N12S3L15ATMA1 Infineon Technologies Infineon-IPD50N12S3L-15-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf088407fe3 Description: MOSFET N-CHANNEL_100+
товару немає в наявності
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IPA50R399CP IPA50R399CP Infineon Technologies INFNS15800-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
на замовлення 787 шт:
термін постачання 21-31 дні (днів)
388+59.94 грн
Мінімальне замовлення: 388
В кошику  од. на суму  грн.
IPAN60R210PFD7SXKSA1 IPAN60R210PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R210PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e2254e024673e Description: MOSFET N-CH 650V 16A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
на замовлення 781 шт:
термін постачання 21-31 дні (днів)
3+154.99 грн
50+84.70 грн
100+76.31 грн
500+57.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPAN60R280PFD7SXKSA1 IPAN60R280PFD7SXKSA1 Infineon Technologies Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926 Description: CONSUMER PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
на замовлення 2779 шт:
термін постачання 21-31 дні (днів)
3+137.11 грн
50+69.34 грн
100+64.15 грн
500+47.15 грн
1000+43.25 грн
2000+40.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ESD230B1W0201E6327XTSA1 ESD230B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934 Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
на замовлення 14728 шт:
термін постачання 21-31 дні (днів)
27+12.77 грн
55+5.99 грн
100+4.50 грн
500+3.56 грн
1000+3.17 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
DF400R12KE3HOSA1 DF400R12KE3HOSA1 Infineon Technologies Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c Description: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 332 шт:
термін постачання 21-31 дні (днів)
3+10426.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DF400R12KE3HOSA1 DF400R12KE3HOSA1 Infineon Technologies Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
товару немає в наявності
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IPW90R800C3 IPW90R800C3 Infineon Technologies INFNS14343-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товару немає в наявності
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IPA90R800C3 IPA90R800C3 Infineon Technologies INFNS12359-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 900V 6.9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPS60R800CEAKMA1 IPS60R800CEAKMA1 Infineon Technologies Infineon-IPS60R800CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f7a45772590 Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tj)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
899+25.24 грн
Мінімальне замовлення: 899
В кошику  од. на суму  грн.
IPW90R800C3FKSA1 IPW90R800C3FKSA1 Infineon Technologies IPW90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8db526a81095 Description: MOSFET N-CH 900V 6.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товару немає в наявності
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IPA90R800C3XKSA1 IPA90R800C3XKSA1 Infineon Technologies IPA90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8cd8a0b90fc6 Description: MOSFET N-CH 900V 6.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPI90R800C3 IPI90R800C3 Infineon Technologies IPI90R800C3_Rev1.0_7-30-08.pdf Description: MOSFET N-CH 900V 6.9A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товару немає в наявності
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BGA 758L7 E6327 BGA 758L7 E6327 Infineon Technologies BGA758L7.pdf Description: IC RF AMP WLAN 5GHZ-6GHZ TSLP7-8
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 6GHz
RF Type: WLAN
Voltage - Supply: 4V
Gain: 12.5dB
Current - Supply: 7mA
Noise Figure: 13dB
P1dB: -3.5dBm
Test Frequency: 5.5GHz
Supplier Device Package: PG-TSLP-7-8
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+53.61 грн
Мінімальне замовлення: 7500
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BGA 758L7 E6327 BGA 758L7 E6327 Infineon Technologies BGA758L7.pdf Description: IC RF AMP WLAN 5GHZ-6GHZ TSLP7-8
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 6GHz
RF Type: WLAN
Voltage - Supply: 4V
Gain: 12.5dB
Current - Supply: 7mA
Noise Figure: 13dB
P1dB: -3.5dBm
Test Frequency: 5.5GHz
Supplier Device Package: PG-TSLP-7-8
на замовлення 18325 шт:
термін постачання 21-31 дні (днів)
5+69.83 грн
10+57.57 грн
25+53.99 грн
100+46.11 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TLE8444SLXUMA1 TLE8444SLXUMA1 Infineon Technologies Infineon-TLE8444SL-DS-v01_01-en.pdf?fileId=db3a30431ff98815012060afb566617a Description: IC MOTOR DRIVER BIPOLAR 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 8V ~ 18V
Technology: BiCDMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-SSOP-24-7
Motor Type - Stepper: Bipolar, Unipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
на замовлення 22967 шт:
термін постачання 21-31 дні (днів)
2+237.60 грн
10+171.72 грн
25+157.42 грн
100+133.05 грн
250+126.03 грн
500+121.81 грн
1000+116.39 грн
Мінімальне замовлення: 2
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D1030N24TXPSA1 Infineon Technologies D1030N.pdf Description: DIODE GEN PURP 2.4KV 1030A
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PEF 2026 T-S V1.1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC TELECOM INTERFACE PDSO-20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Current - Supply: 700µA
Supplier Device Package: P-DSO-20-5
Part Status: Obsolete
Number of Circuits: 1
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IRF6614TRPBF IRF6614TRPBF Infineon Technologies IRSDS10487-1.pdf?t.download=true&u=5oefqw Description: IRF6614 - 12V-300V N-CHANNEL POW
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BF776H6327 BF776H6327 Infineon Technologies INFNS14629-1.pdf?t.download=true&u=5oefqw Description: RF TRANSISTOR, NPN
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
1757+13.73 грн
Мінімальне замовлення: 1757
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SIDC03D60C8X1SA2 Infineon Technologies Infineon-SIDC03D60C8_L4014M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8c163a6d01a9 Description: DIODE SWITCHING 600V 10A WAFER
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X97813760 X97813760 Infineon Technologies INFNS13386-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL MOSFET
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FP50R12N2T7PBPSA1 FP50R12N2T7PBPSA1 Infineon Technologies Infineon-FP50R12N2T7P-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a42f052e20 Description: 1200 V, 50 A PIM IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+10496.81 грн
10+9356.78 грн
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DF1000R17IE4BOSA1 DF1000R17IE4BOSA1 Infineon Technologies Infineon-DF1000R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f22cae54be8 Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+41769.22 грн
В кошику  од. на суму  грн.
DF1000R17IE4BOSA1 DF1000R17IE4BOSA1 Infineon Technologies Infineon-DF1000R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f22cae54be8 Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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FD1000R17IE4BOSA2 FD1000R17IE4BOSA2 Infineon Technologies Infineon-FD1000R17IE4-DS-v02_01-en_de.pdf?fileId=db3a30431ff9881501201f20782f4bd1 Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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FS450R12OE4PBOSA1 FS450R12OE4PBOSA1 Infineon Technologies Infineon-FS450R12OE4P-DS-v03_00-EN.pdf?fileId=5546d462584d1d4a01584efa37760727 Description: IGBT MOD 1200V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 1.55 nF @ 25 V
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T2851N42TOHXPSA1 Infineon Technologies T2851N.pdf Description: SCR MODULE 5200V 4860A DO200AE
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MA11034081NDSA1 Infineon Technologies Description: A-PCB MA110 34081
Packaging: Bulk
Part Status: Obsolete
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BGA9H1MN9E6329XTSA1 BGA9H1MN9E6329XTSA1 Infineon Technologies Infineon-BGA9H1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179f5d464fd1889 Description: RF MMIC 3 TO 6 GHZ PG-TSNP-9
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BGA9H1MN9E6329XTSA1 BGA9H1MN9E6329XTSA1 Infineon Technologies Infineon-BGA9H1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179f5d464fd1889 Description: RF MMIC 3 TO 6 GHZ PG-TSNP-9
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T2251N70TOHXPSA1 T2251N70TOHXPSA1 Infineon Technologies Infineon-T2251N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b42fb26d4cfb Description: SCR MODULE 8000V 3550A DO200AE
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T201N70TOHXPSA1 T201N70TOHXPSA1 Infineon Technologies Infineon-T201N-DS-v07_00-en_de.pdf?fileId=db3a304412b407950112b4304bc65006 Description: SCR MODULE 7KV 385A TO-200AB
Packaging: Tray
Package / Case: TO-200AB
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4700A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 340 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 385 A
Voltage - Off State: 7 kV
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T1081N70TOHXPSA1 T1081N70TOHXPSA1 Infineon Technologies Infineon-T1081N-DS-v08_00-en_de.pdf?fileId=db3a304412b407950112b43054725012 Description: SCR MODULE 7000V 2040A DO200AE
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T1901N70TS07XPSA1 Infineon Technologies T1901N_Rev9.0_05-02-11.pdf Description: SCR MODULE T15035K-1-1
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SAKX164CM8F40F SAKX164CM8F40F Infineon Technologies INFNS10522-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT FLASH MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, CANbus, SPI, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
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SAF-XC878M-16FFI5VAC SAF-XC878M-16FFI5VAC Infineon Technologies INFNS15609-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: 1Y8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
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IMW120R014M1HXKSA1 IMW120R014M1HXKSA1 Infineon Technologies Infineon-IMW120R014M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8783973231b5 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 800 V
на замовлення 1092 шт:
термін постачання 21-31 дні (днів)
1+1937.39 грн
30+1204.42 грн
120+1180.25 грн
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IMW120R020M1HXKSA1 IMW120R020M1HXKSA1 Infineon Technologies Infineon-IMW120R020M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8767f7bb318f Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V
на замовлення 944 шт:
термін постачання 21-31 дні (днів)
1+1463.05 грн
30+887.06 грн
120+826.07 грн
В кошику  од. на суму  грн.
IMW120R040M1HXKSA1 IMW120R040M1HXKSA1 Infineon Technologies Infineon-IMW120R040M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8783c06631ca Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 10mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V
на замовлення 312 шт:
термін постачання 21-31 дні (днів)
1+1029.58 грн
30+600.26 грн
120+514.50 грн
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SAK-TC297TC-96F300S BC SAK-TC297TC-96F300S BC Infineon Technologies Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
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SAK-TC297TP-96F300S BB SAK-TC297TP-96F300S BB Infineon Technologies Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Obsolete
Number of I/O: 169
DigiKey Programmable: Not Verified
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SAK-TC297T-96F300S BB SAK-TC297T-96F300S BB Infineon Technologies Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Obsolete
Number of I/O: 169
DigiKey Programmable: Not Verified
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SAK-TC297T-96F300N BC SAK-TC297T-96F300N BC Infineon Technologies Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
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SAK-TC297TC-96F300S BB SAK-TC297TC-96F300S BB Infineon Technologies Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Obsolete
Number of I/O: 169
DigiKey Programmable: Not Verified
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SAK-TC297TP-96F300N BC SAK-TC297TP-96F300N BC Infineon Technologies Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
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TC297TP96F300SBBKXUMA1 TC297TP96F300SBBKXUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
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TC377TP96F300SAALXUMA1 TC377TP96F300SAALXUMA1 Infineon Technologies Infineon-AURIX_TC37x_Addendum-DataSheet-v01_05-EN.pdf?fileId=5546d46272e49d2a01730574c782647e Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
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IGP01N120H2XKSA1036 IGP01N120H2XKSA1036 Infineon Technologies INFNS16255-1.pdf?t.download=true&u=5oefqw Description: IGP01N120 - DISCRETE IGBT WITHOU
товару немає в наявності
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DD500S33HE3BPSA1 DD500S33HE3BPSA1 Infineon Technologies Infineon-DD500S33HE3-DS-v03_02-EN.pdf?fileId=db3a30433784a0400137990501fd2796 Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
1+79378.38 грн
В кошику  од. на суму  грн.
IMC101TT038XUMA1 Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC101TT038XUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-5.5V TSSOP-38
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
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IMC101TT038XUMA1 Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC101TT038XUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 3V-5.5V TSSOP-38
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-TSSOP-38-9
Motor Type - AC, DC: AC, Synchronous
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+361.08 грн
10+229.70 грн
100+162.51 грн
500+125.61 грн
1000+116.96 грн
В кошику  од. на суму  грн.
BAS70-07E6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-07E6327
Виробник: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT143-4
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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BAS70-07WE6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-07WE6327
Виробник: Infineon Technologies
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT343-4-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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TLE5309EVALKITTOBO1 Infineon-TLE5x09A16(D)-Eval_Kit-UserManual-v01_00-EN.pdf?fileId=5546d46274b9648d0174baccfbbe52b4
TLE5309EVALKITTOBO1
Виробник: Infineon Technologies
Description: TLE5309 EVAL KIT
Packaging: Bulk
Sensitivity: 0.1°
Contents: Board(s)
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Magnetic, GMR (Giant Magnetoresistive)
Utilized IC / Part: TLE5309, XMC4700
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4243.52 грн
В кошику  од. на суму  грн.
IPD70N12S311ATMA1 Infineon-IPD70N12S3-11-DS-v01_00-EN.pdf?fileId=5546d4625c54d85b015c59bb04e36ce6
IPD70N12S311ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 70A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+62.45 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD70N12S311ATMA1 Infineon-IPD70N12S3-11-DS-v01_00-EN.pdf?fileId=5546d4625c54d85b015c59bb04e36ce6
IPD70N12S311ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 70A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3531 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+208.64 грн
10+130.06 грн
100+89.57 грн
500+69.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD50N08S413ATMA1 PdfFile_624492.pdf
IPD50N08S413ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 50A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD50N08S413ATMA1 PdfFile_624492.pdf
IPD50N08S413ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 50A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 33µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1711 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 736 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+123.48 грн
10+75.69 грн
100+50.70 грн
500+37.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD50N04S4-08 INFNS15018-1.pdf?t.download=true&u=5oefqw
IPD50N04S4-08
Виробник: Infineon Technologies
Description: IPD50N04 - 20V-40V N-CHANNEL AUT
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IPD50N12S3L15ATMA1 Infineon-IPD50N12S3L-15-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf088407fe3
IPD50N12S3L15ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
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IPA50R399CP INFNS15800-1.pdf?t.download=true&u=5oefqw
IPA50R399CP
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
на замовлення 787 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
388+59.94 грн
Мінімальне замовлення: 388
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IPAN60R210PFD7SXKSA1 Infineon-IPAN60R210PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e2254e024673e
IPAN60R210PFD7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 16A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
на замовлення 781 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.99 грн
50+84.70 грн
100+76.31 грн
500+57.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPAN60R280PFD7SXKSA1 Infineon-IPAN60R280PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed5c9de013926
IPAN60R280PFD7SXKSA1
Виробник: Infineon Technologies
Description: CONSUMER PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
на замовлення 2779 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.11 грн
50+69.34 грн
100+64.15 грн
500+47.15 грн
1000+43.25 грн
2000+40.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ESD230B1W0201E6327XTSA1 Infineon-ESD230-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c031740b5934
ESD230B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 14VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.05V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 56W
на замовлення 14728 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.77 грн
55+5.99 грн
100+4.50 грн
500+3.56 грн
1000+3.17 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
DF400R12KE3HOSA1 Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c
DF400R12KE3HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 332 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+10426.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DF400R12KE3HOSA1 Infineon-DF400R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b431ae84551c
DF400R12KE3HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 580A 2000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
товару немає в наявності
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IPW90R800C3 INFNS14343-1.pdf?t.download=true&u=5oefqw
IPW90R800C3
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPA90R800C3 INFNS12359-1.pdf?t.download=true&u=5oefqw
IPA90R800C3
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPS60R800CEAKMA1 Infineon-IPS60R800CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537f7a45772590
IPS60R800CEAKMA1
Виробник: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tj)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
899+25.24 грн
Мінімальне замовлення: 899
В кошику  од. на суму  грн.
IPW90R800C3FKSA1 IPW90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8db526a81095
IPW90R800C3FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO247-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товару немає в наявності
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IPA90R800C3XKSA1 IPA90R800C3_1.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30431b3e89eb011b8cd8a0b90fc6
IPA90R800C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPI90R800C3 IPI90R800C3_Rev1.0_7-30-08.pdf
IPI90R800C3
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 6.9A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
товару немає в наявності
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BGA 758L7 E6327 BGA758L7.pdf
BGA 758L7 E6327
Виробник: Infineon Technologies
Description: IC RF AMP WLAN 5GHZ-6GHZ TSLP7-8
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 6GHz
RF Type: WLAN
Voltage - Supply: 4V
Gain: 12.5dB
Current - Supply: 7mA
Noise Figure: 13dB
P1dB: -3.5dBm
Test Frequency: 5.5GHz
Supplier Device Package: PG-TSLP-7-8
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+53.61 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
BGA 758L7 E6327 BGA758L7.pdf
BGA 758L7 E6327
Виробник: Infineon Technologies
Description: IC RF AMP WLAN 5GHZ-6GHZ TSLP7-8
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 5GHz ~ 6GHz
RF Type: WLAN
Voltage - Supply: 4V
Gain: 12.5dB
Current - Supply: 7mA
Noise Figure: 13dB
P1dB: -3.5dBm
Test Frequency: 5.5GHz
Supplier Device Package: PG-TSLP-7-8
на замовлення 18325 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.83 грн
10+57.57 грн
25+53.99 грн
100+46.11 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TLE8444SLXUMA1 Infineon-TLE8444SL-DS-v01_01-en.pdf?fileId=db3a30431ff98815012060afb566617a
TLE8444SLXUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER BIPOLAR 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 8V ~ 18V
Technology: BiCDMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-SSOP-24-7
Motor Type - Stepper: Bipolar, Unipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Part Status: Active
на замовлення 22967 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+237.60 грн
10+171.72 грн
25+157.42 грн
100+133.05 грн
250+126.03 грн
500+121.81 грн
1000+116.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
D1030N24TXPSA1 D1030N.pdf
Виробник: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 1030A
товару немає в наявності
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PEF 2026 T-S V1.1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-20
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Current - Supply: 700µA
Supplier Device Package: P-DSO-20-5
Part Status: Obsolete
Number of Circuits: 1
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IRF6614TRPBF IRSDS10487-1.pdf?t.download=true&u=5oefqw
IRF6614TRPBF
Виробник: Infineon Technologies
Description: IRF6614 - 12V-300V N-CHANNEL POW
товару немає в наявності
В кошику  од. на суму  грн.
BF776H6327 INFNS14629-1.pdf?t.download=true&u=5oefqw
BF776H6327
Виробник: Infineon Technologies
Description: RF TRANSISTOR, NPN
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
Frequency - Transition: 46GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1757+13.73 грн
Мінімальне замовлення: 1757
В кошику  од. на суму  грн.
SIDC03D60C8X1SA2 Infineon-SIDC03D60C8_L4014M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8c163a6d01a9
Виробник: Infineon Technologies
Description: DIODE SWITCHING 600V 10A WAFER
товару немає в наявності
В кошику  од. на суму  грн.
X97813760 INFNS13386-1.pdf?t.download=true&u=5oefqw
X97813760
Виробник: Infineon Technologies
Description: SMALL SIGNAL MOSFET
товару немає в наявності
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FP50R12N2T7PBPSA1 Infineon-FP50R12N2T7P-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018083a42f052e20
FP50R12N2T7PBPSA1
Виробник: Infineon Technologies
Description: 1200 V, 50 A PIM IGBT MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 4 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10496.81 грн
10+9356.78 грн
В кошику  од. на суму  грн.
DF1000R17IE4BOSA1 Infineon-DF1000R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f22cae54be8
DF1000R17IE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+41769.22 грн
В кошику  од. на суму  грн.
DF1000R17IE4BOSA1 Infineon-DF1000R17IE4-DS-v02_02-en_de.pdf?fileId=db3a30431ff9881501201f22cae54be8
DF1000R17IE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FD1000R17IE4BOSA2 Infineon-FD1000R17IE4-DS-v02_01-en_de.pdf?fileId=db3a30431ff9881501201f20782f4bd1
FD1000R17IE4BOSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 6250W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
товару немає в наявності
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FS450R12OE4PBOSA1 Infineon-FS450R12OE4P-DS-v03_00-EN.pdf?fileId=5546d462584d1d4a01584efa37760727
FS450R12OE4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 1.55 nF @ 25 V
товару немає в наявності
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T2851N42TOHXPSA1 T2851N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 5200V 4860A DO200AE
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MA11034081NDSA1
Виробник: Infineon Technologies
Description: A-PCB MA110 34081
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BGA9H1MN9E6329XTSA1 Infineon-BGA9H1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179f5d464fd1889
BGA9H1MN9E6329XTSA1
Виробник: Infineon Technologies
Description: RF MMIC 3 TO 6 GHZ PG-TSNP-9
товару немає в наявності
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BGA9H1MN9E6329XTSA1 Infineon-BGA9H1MN9-DataSheet-v02_00-EN.pdf?fileId=5546d46279cccfdb0179f5d464fd1889
BGA9H1MN9E6329XTSA1
Виробник: Infineon Technologies
Description: RF MMIC 3 TO 6 GHZ PG-TSNP-9
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T2251N70TOHXPSA1 Infineon-T2251N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b42fb26d4cfb
T2251N70TOHXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 8000V 3550A DO200AE
товару немає в наявності
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T201N70TOHXPSA1 Infineon-T201N-DS-v07_00-en_de.pdf?fileId=db3a304412b407950112b4304bc65006
T201N70TOHXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 7KV 385A TO-200AB
Packaging: Tray
Package / Case: TO-200AB
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4700A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 340 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 385 A
Voltage - Off State: 7 kV
товару немає в наявності
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T1081N70TOHXPSA1 Infineon-T1081N-DS-v08_00-en_de.pdf?fileId=db3a304412b407950112b43054725012
T1081N70TOHXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 7000V 2040A DO200AE
товару немає в наявності
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T1901N70TS07XPSA1 T1901N_Rev9.0_05-02-11.pdf
Виробник: Infineon Technologies
Description: SCR MODULE T15035K-1-1
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SAKX164CM8F40F INFNS10522-1.pdf?t.download=true&u=5oefqw
SAKX164CM8F40F
Виробник: Infineon Technologies
Description: LEGACY 16-BIT FLASH MCU
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, CANbus, SPI, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
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SAF-XC878M-16FFI5VAC INFNS15609-1.pdf?t.download=true&u=5oefqw
SAF-XC878M-16FFI5VAC
Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: 1Y8x10b SAR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 40
DigiKey Programmable: Not Verified
товару немає в наявності
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IMW120R014M1HXKSA1 Infineon-IMW120R014M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8783973231b5
IMW120R014M1HXKSA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 pF @ 800 V
на замовлення 1092 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1937.39 грн
30+1204.42 грн
120+1180.25 грн
В кошику  од. на суму  грн.
IMW120R020M1HXKSA1 Infineon-IMW120R020M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8767f7bb318f
IMW120R020M1HXKSA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 17.6mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V
на замовлення 944 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1463.05 грн
30+887.06 грн
120+826.07 грн
В кошику  од. на суму  грн.
IMW120R040M1HXKSA1 Infineon-IMW120R040M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f8783c06631ca
IMW120R040M1HXKSA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 10mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 800 V
на замовлення 312 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1029.58 грн
30+600.26 грн
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SAK-TC297TC-96F300S BC Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
SAK-TC297TC-96F300S BC
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
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SAK-TC297TP-96F300S BB
SAK-TC297TP-96F300S BB
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Obsolete
Number of I/O: 169
DigiKey Programmable: Not Verified
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SAK-TC297T-96F300S BB
SAK-TC297T-96F300S BB
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Obsolete
Number of I/O: 169
DigiKey Programmable: Not Verified
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SAK-TC297T-96F300N BC Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
SAK-TC297T-96F300N BC
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
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SAK-TC297TC-96F300S BB
SAK-TC297TC-96F300S BB
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Obsolete
Number of I/O: 169
DigiKey Programmable: Not Verified
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SAK-TC297TP-96F300N BC Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
SAK-TC297TP-96F300N BC
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
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TC297TP96F300SBBKXUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
TC297TP96F300SBBKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 456K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
Number of I/O: 169
DigiKey Programmable: Not Verified
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TC377TP96F300SAALXUMA1 Infineon-AURIX_TC37x_Addendum-DataSheet-v01_05-EN.pdf?fileId=5546d46272e49d2a01730574c782647e
TC377TP96F300SAALXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 6MB (6M x 8)
RAM Size: 1.1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
Part Status: Active
DigiKey Programmable: Not Verified
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IGP01N120H2XKSA1036 INFNS16255-1.pdf?t.download=true&u=5oefqw
IGP01N120H2XKSA1036
Виробник: Infineon Technologies
Description: IGP01N120 - DISCRETE IGBT WITHOU
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DD500S33HE3BPSA1 Infineon-DD500S33HE3-DS-v03_02-EN.pdf?fileId=db3a30433784a0400137990501fd2796
DD500S33HE3BPSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 3300V AGIHVB1303
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 500 A
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+79378.38 грн
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