Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124886) > Сторінка 469 з 2082
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SAF-XC164SM-16F20F BA | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 64LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKCM15R60GDXKMA1 | Infineon Technologies |
Description: IGBT IPM 600V 30A 24-PWRDIP MODVoltage: 600 V Current: 30 A Part Status: Active Voltage - Isolation: 2000Vrms Configuration: 2 Phase Type: IGBT Mounting Type: Through Hole Package / Case: 24-PowerDIP Module (1.028", 26.10mm) Packaging: Bulk |
на замовлення 560 шт: термін постачання 21-31 дні (днів) |
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ISC010N06NM5ATMA1 | Infineon Technologies |
Description: OPTIMOS5 60 V POWER MOSFET IN SUInput Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TSON-8-3 Vgs(th) (Max) @ Id: 3.3V @ 147µA Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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ISC010N06NM5ATMA1 | Infineon Technologies |
Description: OPTIMOS5 60 V POWER MOSFET IN SUPackaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TSON-8-3 Vgs(th) (Max) @ Id: 3.3V @ 147µA Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
на замовлення 262 шт: термін постачання 21-31 дні (днів) |
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| T2510N06TOFVTPRXPSA1 | Infineon Technologies |
Description: SCR MODULE 600V 4900A DO200AC Packaging: Tray Package / Case: TO-200AC Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 46000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 2510 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 4900 A Voltage - Off State: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SAK-XC886CLM-8FFA5VAC | Infineon Technologies |
Description: XC800 I-FAMILY MICROCONTROLLER ,Number of I/O: 48 Part Status: Active Supplier Device Package: PG-TQFP-48 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: CANbus, LINbus, SSC, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 8-Bit Data Converters: 1Y8x10b SAR Core Processor: XC800 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 1.75K x 8 Program Memory Size: 32KB (32K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 48-TQFP Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAF-XC886CM-8FFI5VAC | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48TQFPNumber of I/O: 34 Part Status: Active Supplier Device Package: PG-TQFP-48-4 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: CANbus, SSI, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1.75K x 8 Program Memory Size: 32KB (32K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 48-TQFP Packaging: Bulk DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLD55411QUXUMA1 | Infineon Technologies |
Description: IC LED DRIVER CTRLR PWM TQFP48-9Packaging: Bulk Package / Case: 48-TQFP Exposed Pad Voltage - Output: 55V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 200kHz ~ 700kHz Type: DC DC Controller Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): No Topology: Step-Down (Buck), Step-Up (Boost) Supplier Device Package: PG-TQFP-48-9 Dimming: Analog, PWM Voltage - Supply (Min): 4.5V Voltage - Supply (Max): 40V Grade: Automotive |
на замовлення 3065 шт: термін постачання 21-31 дні (днів) |
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SAL-XC886-8FFA 5V AC | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48TQFPProgram Memory Size: 32KB (32K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Number of I/O: 34 Supplier Device Package: PG-TQFP-48 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: SSI, UART/USART Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: XC800 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 150°C (TA) RAM Size: 1.75K x 8 |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
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SAA-XC886-8FFA 5V AC | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48TQFPDigiKey Programmable: Not Verified Number of I/O: 34 Part Status: Obsolete Supplier Device Package: PG-TQFP-48 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: SSI, UART/USART Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: XC800 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 140°C (TA) RAM Size: 1.75K x 8 Program Memory Size: 32KB (32K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
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SAF-XC886CM-8FFI 3V3 AC | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48TQFPDigiKey Programmable: Not Verified Number of I/O: 34 Part Status: Obsolete Supplier Device Package: PG-TQFP-48 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: CANbus, SSI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: XC800 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 1.75K x 8 Program Memory Size: 32KB (32K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
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SAA-XC886C-8FFA AC | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48TQFPNumber of I/O: 34 Part Status: Obsolete Supplier Device Package: PG-TQFP-48 Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: CANbus, SSI, UART/USART Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: XC800 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 140°C (TA) RAM Size: 1.75K x 8 Program Memory Size: 32KB (32K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 48-LQFP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE8251VSJXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 PGDSO8Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: PG-DSO-8 Protocol: CANbus Data Rate: 2Mbps Number of Drivers/Receivers: 1/1 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 150°C Type: Transceiver |
на замовлення 4975 шт: термін постачання 21-31 дні (днів) |
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S70FL01GSDSMFV010 | Infineon Technologies |
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC |
на замовлення 89 шт: термін постачання 21-31 дні (днів) |
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S70FS01GSDSMFI010 | Infineon Technologies |
Description: IC FLASH 1GBIT SPI/QUAD 16SOICMemory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 128M x 8 Memory Interface: SPI - Quad I/O Supplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 80 MHz Technology: FLASH - NOR Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) |
товару немає в наявності |
Мінімальне замовлення: 2400 шт В кошику од. на суму грн. | ||||||||||||||
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2ED2110S06MXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 25ns, 17ns Channel Type: Independent Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 14V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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2ED2110S06MXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 25ns, 17ns Channel Type: Independent Driven Configuration: High-Side and Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 14V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 907 шт: термін постачання 21-31 дні (днів) |
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2ED2104S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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2ED2104S06FXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1378 шт: термін постачання 21-31 дні (днів) |
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ITS4100S-SJ-N | Infineon Technologies |
Description: N-CHANNEL VERTICAL POWER FET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ITS4060S-SJ-N | Infineon Technologies |
Description: N-CHANNEL VERTICAL POWER FET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDW30S120FKSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 1200V 15A TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IDW30S120FKSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 1200V 15A TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ICE5BR3995CZXKLA1 | Infineon Technologies |
Description: COOLSET (INCL. GEN5) PG-DIP-7Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): Yes Voltage - Breakdown: 950V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 16 V Control Features: Soft Start Part Status: Active Power (Watts): 30 W |
на замовлення 1969 шт: термін постачання 21-31 дні (днів) |
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| IPC300N15N3RX2MA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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IPTG025N10NM5ATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOG-8Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Gull Wing Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-HSOG-8-1 Vgs(th) (Max) @ Id: 3.8V @ 158µA Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 206A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||
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SAF-XC164GM-16F40F BA | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 64LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAF-XC164GM-16F20F BA | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 64LQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE42642GHTMA1 | Infineon Technologies |
Description: IC REG LIN 5V 150MA PG-SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 70 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 68dB (100Hz) Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 4 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 11750 шт: термін постачання 21-31 дні (днів) |
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| PEB22622FV1.3 | Infineon Technologies |
Description: SOCRATES SDSL ADAPTIVE TRANSCEIC Packaging: Bulk Part Status: Active |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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| PEF24625EV1.1 | Infineon Technologies | Description: SOCRATES 16-CH DSL CONTROLLER |
на замовлення 340 шт: термін постачання 21-31 дні (днів) |
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T1700N16H75VTXPSA1 | Infineon Technologies |
Description: STD THYR/DIODEN DISC BG-T7526K-1Part Status: Active Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPS12CN10LG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BAW101E6327 | Infineon Technologies |
Description: RECTIFIER DIODECurrent - Reverse Leakage @ Vr: 150 nA @ 250 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 300 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PG-SOT-143-3D Current - Average Rectified (Io) (per Diode): 250mA (DC) Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 1 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Packaging: Bulk |
на замовлення 18350 шт: термін постачання 21-31 дні (днів) |
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BTS3125TFATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3Part Status: Active Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Supplier Device Package: PG-TO252-3-313 Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 31V (Max) Input Type: Non-Inverting Rds On (Typ): 108mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Features: Auto Restart Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BTS3125TFATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3Part Status: Active Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Supplier Device Package: PG-TO252-3-313 Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 31V (Max) Input Type: Non-Inverting Rds On (Typ): 108mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Features: Auto Restart Packaging: Cut Tape (CT) |
на замовлення 6955 шт: термін постачання 21-31 дні (днів) |
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T2480N28TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2800V 5100A DO200AE |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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T2810N18TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2200V 5800A DO200AEVoltage - Off State: 2.2 kV Current - On State (It (RMS)) (Max): 5800 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (AV)) (Max): 2810 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz Current - Gate Trigger (Igt) (Max): 300 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: DO-200AE Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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T2810N20TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 2200V 5800A DO200AE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CYW20702A1KWFBG | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGADigiKey Programmable: Not Verified Serial Interfaces: I2C, I2S, SPI, UART, USB RF Family/Standard: Bluetooth Modulation: 4DQPSK, 8DPSK, GFSK GPIO: 7 Supplier Device Package: 50-WFBGA (4.5x4) Current - Transmitting: 65mA Data Rate (Max): 3Mbps Current - Receiving: 32mA Protocol: Bluetooth v4.0 +EDR Power - Output: 10dBm Voltage - Supply: 2.3V ~ 5.5V Operating Temperature: -30°C ~ 85°C Type: TxRx + MCU Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -92dBm Package / Case: 50-WFBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CYW20702A1KWFBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 50WFBGAPackaging: Tape & Reel (TR) Package / Case: 50-WFBGA Sensitivity: -92dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Power - Output: 10dBm Protocol: Bluetooth v4.0 +EDR Current - Receiving: 32mA Data Rate (Max): 3Mbps Current - Transmitting: 65mA Supplier Device Package: 50-WFBGA (4.5x4) GPIO: 7 Modulation: 4DQPSK, 8DPSK, GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, SPI, UART, USB DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CYW20732E | Infineon Technologies |
Description: IOT BLUETOOTH 802.15.4Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 622 шт: термін постачання 21-31 дні (днів) |
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CYW20732E | Infineon Technologies |
Description: IOT BLUETOOTH 802.15.4DigiKey Programmable: Not Verified Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP0400N | Infineon Technologies |
Description: IPP0400N Packaging: Bulk |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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T2180N14TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 1800V 4460A DO200ADPackaging: Tray Package / Case: DO-200AD Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 2180 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 4460 A Voltage - Off State: 1.8 kV |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
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FP30R06KE3BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2C-311IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONO2C NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 125 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 37 A Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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IPT014N08NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 37A/331A HSOF-8Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-HSOF-8-1 Vgs(th) (Max) @ Id: 3.8V @ 280µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IPT014N08NM5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 37A/331A HSOF-8Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-HSOF-8-1 Vgs(th) (Max) @ Id: 3.8V @ 280µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPT010N08NM5ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-HSOF-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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IPT010N08NM5ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V PG-HSOF-8Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 280µA Supplier Device Package: PG-HSOF-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V |
на замовлення 9027 шт: термін постачання 21-31 дні (днів) |
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IPT063N15N5ATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOF-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 153µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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IPT063N15N5ATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-HSOF-8Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 153µA Supplier Device Package: PG-HSOF-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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IPT026N10N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 27A/202A 8HSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 158µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPT026N10N5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 27A/202A 8HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 158µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V |
на замовлення 3021 шт: термін постачання 21-31 дні (днів) |
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IPI65R110CFD | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Power Dissipation (Max): 277.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Supplier Device Package: PG-TO262-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V |
на замовлення 430 шт: термін постачання 21-31 дні (днів) |
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FP25R12W2T4PB11BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 50A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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IPDQ60R040S7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||
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IPDQ60R040S7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 790µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V |
на замовлення 718 шт: термін постачання 21-31 дні (днів) |
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IPDQ60R065S7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 490µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||
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IPDQ60R065S7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW PG-HDSOP-22Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 490µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V |
на замовлення 285 шт: термін постачання 21-31 дні (днів) |
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| SAF-XC164SM-16F20F BA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Description: IC MCU 16BIT 128KB FLASH 64LQFP
товару немає в наявності
В кошику
од. на суму грн.
| IKCM15R60GDXKMA1 |
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Виробник: Infineon Technologies
Description: IGBT IPM 600V 30A 24-PWRDIP MOD
Voltage: 600 V
Current: 30 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 2 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Bulk
Description: IGBT IPM 600V 30A 24-PWRDIP MOD
Voltage: 600 V
Current: 30 A
Part Status: Active
Voltage - Isolation: 2000Vrms
Configuration: 2 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Bulk
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 880.77 грн |
| ISC010N06NM5ATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS5 60 V POWER MOSFET IN SU
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: OPTIMOS5 60 V POWER MOSFET IN SU
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISC010N06NM5ATMA1 |
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Виробник: Infineon Technologies
Description: OPTIMOS5 60 V POWER MOSFET IN SU
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: OPTIMOS5 60 V POWER MOSFET IN SU
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 262 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 326.24 грн |
| 10+ | 208.04 грн |
| 100+ | 147.97 грн |
| T2510N06TOFVTPRXPSA1 |
Виробник: Infineon Technologies
Description: SCR MODULE 600V 4900A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 46000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 4900 A
Voltage - Off State: 600 V
Description: SCR MODULE 600V 4900A DO200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 46000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 4900 A
Voltage - Off State: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SAK-XC886CLM-8FFA5VAC |
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Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Number of I/O: 48
Part Status: Active
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, LINbus, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: 1Y8x10b SAR
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-TQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: XC800 I-FAMILY MICROCONTROLLER ,
Number of I/O: 48
Part Status: Active
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, LINbus, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: 1Y8x10b SAR
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-TQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
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| SAF-XC886CM-8FFI5VAC |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48TQFP
Number of I/O: 34
Part Status: Active
Supplier Device Package: PG-TQFP-48-4
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-TQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 48TQFP
Number of I/O: 34
Part Status: Active
Supplier Device Package: PG-TQFP-48-4
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-TQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
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| TLD55411QUXUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM TQFP48-9
Packaging: Bulk
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TQFP-48-9
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Description: IC LED DRIVER CTRLR PWM TQFP48-9
Packaging: Bulk
Package / Case: 48-TQFP Exposed Pad
Voltage - Output: 55V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 200kHz ~ 700kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-TQFP-48-9
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
на замовлення 3065 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 131+ | 150.50 грн |
| SAL-XC886-8FFA 5V AC |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48TQFP
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 34
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 1.75K x 8
Description: IC MCU 8BIT 32KB FLASH 48TQFP
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 34
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 1.75K x 8
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Мінімальне замовлення: 1800 шт
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| SAA-XC886-8FFA 5V AC |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48TQFP
DigiKey Programmable: Not Verified
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 140°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 8BIT 32KB FLASH 48TQFP
DigiKey Programmable: Not Verified
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 140°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1800 шт
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| SAF-XC886CM-8FFI 3V3 AC |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48TQFP
DigiKey Programmable: Not Verified
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 8BIT 32KB FLASH 48TQFP
DigiKey Programmable: Not Verified
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1800 шт
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| SAA-XC886C-8FFA AC |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48TQFP
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 140°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 48TQFP
Number of I/O: 34
Part Status: Obsolete
Supplier Device Package: PG-TQFP-48
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: CANbus, SSI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 140°C (TA)
RAM Size: 1.75K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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| TLE8251VSJXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 2Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Description: IC TRANSCEIVER 1/1 PGDSO8
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: PG-DSO-8
Protocol: CANbus
Data Rate: 2Mbps
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
на замовлення 4975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 160.41 грн |
| 10+ | 114.62 грн |
| 25+ | 104.56 грн |
| 100+ | 87.72 грн |
| 250+ | 82.76 грн |
| 500+ | 79.77 грн |
| 1000+ | 76.04 грн |
| S70FL01GSDSMFV010 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
на замовлення 89 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 2321.80 грн |
| S70FS01GSDSMFI010 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
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Мінімальне замовлення: 2400 шт
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| 2ED2110S06MXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 14V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 14V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 1000 шт
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| 2ED2110S06MXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 14V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 14V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 907 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.80 грн |
| 10+ | 124.02 грн |
| 25+ | 113.39 грн |
| 100+ | 95.46 грн |
| 250+ | 90.24 грн |
| 500+ | 87.09 грн |
| 2ED2104S06FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 2500 шт
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| 2ED2104S06FXUMA1 |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1378 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.49 грн |
| 10+ | 54.25 грн |
| 25+ | 49.04 грн |
| 100+ | 40.67 грн |
| 250+ | 38.13 грн |
| 500+ | 36.60 грн |
| 1000+ | 34.75 грн |
| ITS4100S-SJ-N |
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Виробник: Infineon Technologies
Description: N-CHANNEL VERTICAL POWER FET
Description: N-CHANNEL VERTICAL POWER FET
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| ITS4060S-SJ-N |
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Виробник: Infineon Technologies
Description: N-CHANNEL VERTICAL POWER FET
Description: N-CHANNEL VERTICAL POWER FET
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| IDW30S120FKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 1200V 15A TO247-3
Description: DIODE SCHOTTKY 1200V 15A TO247-3
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| IDW30S120FKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 1200V 15A TO247-3
Description: DIODE SCHOTTKY 1200V 15A TO247-3
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| ICE5BR3995CZXKLA1 |
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Виробник: Infineon Technologies
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 30 W
Description: COOLSET (INCL. GEN5) PG-DIP-7
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 30 W
на замовлення 1969 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.16 грн |
| 10+ | 74.84 грн |
| 50+ | 63.76 грн |
| 100+ | 56.62 грн |
| 250+ | 53.22 грн |
| 500+ | 51.18 грн |
| 1000+ | 48.69 грн |
| IPC300N15N3RX2MA1 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 128+ | 176.39 грн |
| IPTG025N10NM5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOG-8
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 206A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: TRENCH >=100V PG-HSOG-8
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOG-8-1
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 206A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Мінімальне замовлення: 1800 шт
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| SAF-XC164GM-16F40F BA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Description: IC MCU 16BIT 128KB FLASH 64LQFP
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| SAF-XC164GM-16F20F BA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Description: IC MCU 16BIT 128KB FLASH 64LQFP
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| TLE42642GHTMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 11750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 110.81 грн |
| 10+ | 77.98 грн |
| 25+ | 70.83 грн |
| 100+ | 59.06 грн |
| 250+ | 55.54 грн |
| 500+ | 53.41 грн |
| 1000+ | 52.13 грн |
| PEB22622FV1.3 |
Виробник: Infineon Technologies
Description: SOCRATES SDSL ADAPTIVE TRANSCEIC
Packaging: Bulk
Part Status: Active
Description: SOCRATES SDSL ADAPTIVE TRANSCEIC
Packaging: Bulk
Part Status: Active
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 2828.86 грн |
| PEF24625EV1.1 |
Виробник: Infineon Technologies
Description: SOCRATES 16-CH DSL CONTROLLER
Description: SOCRATES 16-CH DSL CONTROLLER
на замовлення 340 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 6535.96 грн |
| T1700N16H75VTXPSA1 |
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Виробник: Infineon Technologies
Description: STD THYR/DIODEN DISC BG-T7526K-1
Part Status: Active
Packaging: Tray
Description: STD THYR/DIODEN DISC BG-T7526K-1
Part Status: Active
Packaging: Tray
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| IPS12CN10LG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
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| BAW101E6327 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE
Current - Reverse Leakage @ Vr: 150 nA @ 250 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT-143-3D
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 1 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
Description: RECTIFIER DIODE
Current - Reverse Leakage @ Vr: 150 nA @ 250 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT-143-3D
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 1 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
на замовлення 18350 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2420+ | 9.30 грн |
| BTS3125TFATMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-3-313
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 31V (Max)
Input Type: Non-Inverting
Rds On (Typ): 108mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Tape & Reel (TR)
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-3-313
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 31V (Max)
Input Type: Non-Inverting
Rds On (Typ): 108mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 33.34 грн |
| BTS3125TFATMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-3-313
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 31V (Max)
Input Type: Non-Inverting
Rds On (Typ): 108mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-TO252-3-313
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 31V (Max)
Input Type: Non-Inverting
Rds On (Typ): 108mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Auto Restart
Packaging: Cut Tape (CT)
на замовлення 6955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.27 грн |
| 10+ | 54.55 грн |
| 25+ | 49.28 грн |
| 100+ | 40.82 грн |
| 250+ | 38.23 грн |
| 500+ | 36.67 грн |
| 1000+ | 34.80 грн |
| T2480N28TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2800V 5100A DO200AE
Description: SCR MODULE 2800V 5100A DO200AE
товару немає в наявності
Мінімальне замовлення: 2 шт
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| T2810N18TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2200V 5800A DO200AE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 5800 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2810 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
Description: SCR MODULE 2200V 5800A DO200AE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 5800 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2810 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 58000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
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Мінімальне замовлення: 2 шт
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| T2810N20TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2200V 5800A DO200AE
Description: SCR MODULE 2200V 5800A DO200AE
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| CYW20702A1KWFBG |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, SPI, UART, USB
RF Family/Standard: Bluetooth
Modulation: 4DQPSK, 8DPSK, GFSK
GPIO: 7
Supplier Device Package: 50-WFBGA (4.5x4)
Current - Transmitting: 65mA
Data Rate (Max): 3Mbps
Current - Receiving: 32mA
Protocol: Bluetooth v4.0 +EDR
Power - Output: 10dBm
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -92dBm
Package / Case: 50-WFBGA
Packaging: Tray
Description: IC RF TXRX+MCU BLUETOOTH 50WFBGA
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, I2S, SPI, UART, USB
RF Family/Standard: Bluetooth
Modulation: 4DQPSK, 8DPSK, GFSK
GPIO: 7
Supplier Device Package: 50-WFBGA (4.5x4)
Current - Transmitting: 65mA
Data Rate (Max): 3Mbps
Current - Receiving: 32mA
Protocol: Bluetooth v4.0 +EDR
Power - Output: 10dBm
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -92dBm
Package / Case: 50-WFBGA
Packaging: Tray
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| CYW20702A1KWFBGT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
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| CYW20732E |
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Виробник: Infineon Technologies
Description: IOT BLUETOOTH 802.15.4
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IOT BLUETOOTH 802.15.4
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 622 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 303.76 грн |
| CYW20732E |
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Виробник: Infineon Technologies
Description: IOT BLUETOOTH 802.15.4
DigiKey Programmable: Not Verified
Packaging: Tray
Description: IOT BLUETOOTH 802.15.4
DigiKey Programmable: Not Verified
Packaging: Tray
товару немає в наявності
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| IPP0400N |
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 544+ | 40.34 грн |
| T2180N14TOFVTXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1800V 4460A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1800V 4460A DO200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
товару немає в наявності
Мінімальне замовлення: 2 шт
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| FP30R06KE3BPSA1 |
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Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2C-311
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2C
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 37 A
Part Status: Active
Description: LOW POWER ECONO AG-ECONO2C-311
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2C
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 37 A
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9357.01 грн |
| IPT014N08NM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 37A/331A HSOF-8
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 37A/331A HSOF-8
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| IPT014N08NM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 37A/331A HSOF-8
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 37A/331A HSOF-8
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 331A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
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| IPT010N08NM5ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 242.23 грн |
| IPT010N08NM5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
Description: TRENCH 40<-<100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 280µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 40 V
на замовлення 9027 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 533.14 грн |
| 10+ | 347.58 грн |
| 100+ | 253.64 грн |
| 500+ | 229.70 грн |
| IPT063N15N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 153µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V
Description: TRENCH >=100V PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 153µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IPT063N15N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 153µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V
Description: TRENCH >=100V PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 153µA
Supplier Device Package: PG-HSOF-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 426.20 грн |
| 10+ | 275.05 грн |
| IPT026N10N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 27A/202A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Description: MOSFET N-CH 100V 27A/202A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 98.83 грн |
| IPT026N10N5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 27A/202A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Description: MOSFET N-CH 100V 27A/202A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 202A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 150A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 158µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
на замовлення 3021 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 285.17 грн |
| 10+ | 180.96 грн |
| 100+ | 127.72 грн |
| 500+ | 109.32 грн |
| IPI65R110CFD |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 119+ | 196.83 грн |
| FP25R12W2T4PB11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 50A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Description: IGBT MODULE 1200V 50A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 3136.83 грн |
| IPDQ60R040S7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| IPDQ60R040S7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
на замовлення 718 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 481.99 грн |
| 10+ | 358.03 грн |
| 25+ | 331.41 грн |
| 100+ | 283.59 грн |
| 250+ | 275.14 грн |
| IPDQ60R065S7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| IPDQ60R065S7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 320.81 грн |
| 10+ | 234.91 грн |
| 25+ | 216.46 грн |
| 100+ | 184.11 грн |
| 250+ | 175.04 грн |



























